DE102018104290A1 - OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT - Google Patents

Abstract

It is an optoelectronic device (1) indicated with
at least two optoelectronic semiconductor chips (R, G, B), which are designed to emit light of different colors during operation,
a contact element (2) for electrically contacting at least one of the optoelectronic semiconductor chips (R, G, B),
- An electrically conductive connection (3), the at least one of the optoelectronic semiconductor chips (R, G, B) electrically conductively connected to the contact element (2), and
- An enclosure body (4) which is electrically insulating, wherein
- The optoelectronic semiconductor chips (R, G, B) and the contact element (2) are embedded in the enclosure body (4), and
- The electrically conductive connection (3) is arranged in places on the wrapping body (4).

Description

An optoelectronic component is specified. Furthermore, a method for producing such an optoelectronic component is specified.

An object to be solved is to provide an optoelectronic component which is particularly compact and inexpensive. Another object to be achieved is to provide a method for producing such an optoelectronic device.

The optoelectronic component is, for example, a radiation-emitting component which emits electromagnetic radiation, in particular visible light, during operation. For example, the component is a light emitting diode.

In accordance with at least one embodiment, the optoelectronic component comprises at least two optoelectronic semiconductor chips, which are designed, for example, to emit or detect light of different colors during operation. The at least two optoelectronic semiconductor chips are, for example, radiation-emitting semiconductor chips, such as light-emitting diode chips, in short LED chips or laser diode chips.

The at least two optoelectronic semiconductor chips each have a top surface, a bottom surface and at least one side surface. The top surface is arranged opposite the bottom surface. The top surface and the bottom surface are interconnected by the at least one side surface.

In particular, the at least two optoelectronic semiconductor chips are arranged at a distance from one another in lateral directions. The lateral directions run, for example, parallel to the top surface of the optoelectronic semiconductor chips. That is, in a direction that runs, for example, parallel to the top surface of the at least two optoelectronic semiconductor chips, the at least two optoelectronic semiconductor chips have a spacing and do not touch each other. The bottom surfaces of the at least two optoelectronic semiconductor chips lie, for example, in each case in a common plane. Furthermore, the at least two optoelectronic semiconductor chips could have substantially the same height. Substantially equal means that the heights for different optoelectronic semiconductor chips can vary by manufacturing tolerances by at most +/- 20%, in particular by at most +/- 10%.

If the optoelectronic component has more than two optoelectronic semiconductor chips, they can be arranged in a plane, for example in a matrix, that is to say arranged along rows and columns. Furthermore, the optoelectronic semiconductor chips can be arranged, for example, at grid points of a regular grid.

The radiation-emitting component may, for example, have exactly three radiation-emitting semiconductor chips. The radiation-emitting semiconductor chips are then formed, for example, in operation in pairs to produce light of different colors. For example, one radiation-emitting semiconductor chip emits light of red color, another radiation-emitting semiconductor chip emits light of green color, and another radiation-emitting semiconductor chip emits light of blue color.

The radiation-emitting semiconductor chips may, for example, be arranged along a line. Alternatively, it is possible to arrange the radiation-emitting semiconductor chips at the vertices of a triangle.

Alternatively, the optoelectronic component can also be an optoelectronic component which is provided for the detection of electromagnetic radiation. That is, the at least two radiation-emitting semiconductor chips of the optoelectronic component are then given by at least two radiation-detecting semiconductor chips. Furthermore, the component can comprise both radiation-emitting and detecting semiconductor chips.

By way of example, the optoelectronic component may have at least one radiation-detecting semiconductor chip and at least one radiation-emitting semiconductor chip. The at least one radiation-detecting semiconductor chip is designed, for example, to detect the electromagnetic radiation emitted during operation of the at least one radiation-detecting semiconductor chip. Furthermore, it is possible for the optoelectronic component to comprise, for example, a number of radiation-detecting and radiation-emitting semiconductor chips, which are arranged in a plane, for example in a matrix, ie arranged along rows and columns.

In accordance with at least one embodiment, the optoelectronic component comprises a contact element for electrically contacting at least one of the optoelectronic semiconductor chips. The contact element is arranged in lateral directions at a distance from the at least two optoelectronic semiconductor chips. That is, the contact element is arranged laterally of the at least two optoelectronic semiconductor chips.

The contact element has a top surface, a bottom surface and at least one side surface. The top surface is arranged opposite the bottom surface. The top surface and the bottom surface are interconnected by the at least one side surface. The bottom surface of the contact element lies, for example, in each case in a common plane with the bottom surfaces of the at least two optoelectronic semiconductor chips. Furthermore, the contact element and the at least two optoelectronic semiconductor chips may have a substantially equal height. Substantially equal means that the heights for different optoelectronic semiconductor chips and the contact element can vary by manufacturing tolerances by at most +/- 20%, in particular by at most +/- 10%.

The at least one contact element comprises, for example, an electrically conductive material or consists thereof. The electrically conductive material is, for example, a metal or a semiconductor material. The electrically conductive material contains or consists for example of silicon, which may be doped or undoped.

In accordance with at least one embodiment, the optoelectronic component comprises an electrically conductive connection, which electrically conductively connects at least one of the semiconductor chips to the contact element. The electrically conductive connection is, for example, in direct and direct contact with the at least one semiconductor chip and the contact element. The electrically conductive connection is formed for example with a metal or an electrically conductive adhesive. In addition, the electrical connection may comprise a combination of several metals.

The electrically conductive connection has, for example, a thickness which may be, for example, between at least 1 μm and at most 15 μm. The thickness of the at least one electrically conductive connection is within the manufacturing tolerance, in particular in the context of manufacturing tolerance, constant over the entire extent of the electrically conductive connection. The electrically conductive connection has, for example, a width that is large compared to the thickness of the electrically conductive connection. The width of the electrically conductive connection may, for example, be greater by a factor of 10 or 100 or 1000 than the thickness of the electrically conductive connection.

In accordance with at least one embodiment, the optoelectronic component comprises a cladding body that is electrically insulating. By way of example, the cladding body is transparent or impermeable to the radiation emitted or detected by the optoelectronic semiconductor chips. The cladding body may be designed to be reflective, in particular diffusely reflective, or absorbing for the radiation emitted or detected by the optoelectronic semiconductor chips. The wrapping body is formed, for example, of a matrix material. The matrix material is formed for example from a plastic such as a silicone, an epoxy or an epoxy hybrid material. The plastic may be added, for example, a colorant such as carbon black or a pigment. Thus, the wrapping body may appear black or white or colored.

If the cladding body is designed to be reflective, it is possible, for example, for light-reflecting particles to be introduced into the matrix material. The particles are formed, for example, with at least one of the following materials or contain at least one of the following materials: TiO ₂ , BaSO ₄ , ZnO, Al _x O _y . That is, electromagnetic radiation exiting the side surfaces of the radiation-emitting semiconductor chip may then be reflected by the cladding body. In addition, the cladding body forms the mechanically stabilizing component of the optoelectronic component.

In accordance with at least one embodiment, the optoelectronic semiconductor chips and the contact element are embedded in the cladding body. "Embedded" means, for example, that the optoelectronic semiconductor chips and the contact element bear against the wrapping body, lie partially within the wrapping body and / or are enclosed by the wrapping body on at least part of its outer surface.

The side faces of the at least two optoelectronic semiconductor chips and the at least one side face of the contact element are completely covered by the cladding body, for example. The wrapping body is in direct and direct contact with the side surfaces of the semiconductor chips and the at least one side surface of the contact element. For example, a top surface and an opposite bottom surface of the encasing body are flush with the top surface and the bottom surface of the semiconductor chips and the top surface and the bottom surface of the contact element. That is, the top surface and the bottom surface of the semiconductor chip and the contact element are, in particular, substantially free of the cladding body. Substantially free means that small quantities of the cladding body can be arranged by manufacturing tolerances on the top surface and on the bottom surface of the semiconductor chip and the contact element.

Alternatively, it is possible that the side surfaces are covered only up to a certain height from the cover body. That is, only the The top surface or the bottom surface of the wrapping body terminates, for example, flush with the top surface or the bottom surface of the semiconductor chips and the top surface or the bottom surface of the contact element.

In accordance with at least one embodiment, the electrically conductive connection is arranged in places on the covering body. The at least one optoelectronic semiconductor chip and the contact element are arranged, for example, at a distance from one another. That is, the electrically conductive connection is guided from the at least one optoelectronic semiconductor chip to the contact element via the enclosure body. The electrically conductive connection is in direct and direct contact with the cladding body.

In at least one embodiment, the optoelectronic component comprises at least two optoelectronic semiconductor chips which are designed to emit or detect light of different colors during operation, a contact element for electrically contacting at least one of the semiconductor chips, an electrically conductive connection comprising at least one of the semiconductor chips the at least one contact element electrically conductively connects, and a cladding body which is electrically insulating. The semiconductor chip and the contact element are embedded in the cladding body, and the electrically conductive connection is arranged in places on the cladding body.

The optoelectronic component described here now makes use, inter alia, of the idea that semiconductor chips and contact elements are introduced into a cladding body, contacted with one another via electrically conductive connections and can be directly contacted.

Currently, for example, lead frames (English "lead frames"), ceramics and PCBs (English "printed circuit board" PCB short) used to accommodate semiconductor chips and interconnects in a component. Here, for example, semiconductor chips are mounted in preformed housing and then contacted with wires (English "wirebonded"). The assembly may be encapsulated with silicone, for example thereafter.

One idea of the optoelectronic device described here is, inter alia, to use an adhesive film to which the semiconductor chips and the contact elements are applied before the application of a coating material ("foil assisted molding", FAM for short). After applying the wrapping material, the semiconductor chips and the contact elements can then be electrically connected to each other. The contact elements and the electrically conductive connections can be used as a contact for supplying current to the semiconductor chips.

Advantageously, components produced in this way do not require complex connection frames or printed circuit boards. This reduces the production costs of the optoelectronic components. In addition, in the FAM process, no additional soldering or sticking of the semiconductor chips is necessary before the wrapping, whereby the components can be arranged closer to each other. The components can be arranged for example by means of a "pick and place" process on the film. Advantageously, such design changes can be implemented quickly, since only the "pick and place" process must be reprogrammed.

In accordance with at least one embodiment, the optoelectronic component comprises at least two electrically conductive connections, in which the at least two electrically conductive connections connect a contact element and in each case one of the at least two semiconductor chips to one another in an electrically conductive manner. That is, the at least two semiconductor chips are electrically conductively connected to a contact element. The contact element is formed, for example, as an anode. That is, the at least two optoelectronic semiconductor chips have a common anode and are electrically conductively connected to each other by them. The at least two electrically conductive connections are, for example, arranged at a distance from one another in lateral directions and, for example, do not touch each other. That is, the at least two electrically conductive connections are not in direct contact with each other.

In accordance with at least one embodiment, the optoelectronic component comprises at least two contact elements and at least two electrically conductive connections, in which the at least two electrically conductive connections electrically connect respectively one of the at least two contact elements and one of the at least two semiconductor chips. That is, in each case a semiconductor chip is electrically conductively connected to a respective contact element. The contact elements are formed, for example, as anodes. That is, each semiconductor chip, for example, associated with its own anode.

In accordance with at least one embodiment, the at least one electrically conductive connection is arranged on a cover surface of the optoelectronic component. The top surface faces a bottom surface of the optoelectronic device and is connected by a side surface. The at least one electrically conductive connection connects, for example, the top surface of the at least one semiconductor chip to the top surface of the at least one a contact element and extends between the at least one semiconductor chip and the at least one contact element on the top surface of the enclosure body. The at least one electrically conductive connection is, for example, in direct and direct contact with the top surfaces of the at least one semiconductor chip, the at least one contact element and the enclosure body.

In accordance with at least one embodiment, the at least one electrically conductive connection electrically conductively connects the at least two semiconductor chips to one another. This means that the at least one electrically conductive connection only electrically connects the semiconductor chips to one another.

In accordance with at least one embodiment, the at least one electrically conductive connection is arranged on a bottom surface of the optoelectronic component. The at least one electrically conductive connection connects, for example, the bottom surfaces of the semiconductor chips and thereby extends between the semiconductor chips on the bottom surface of the encapsulation body. The electrically conductive connection is, for example, in direct and direct contact with the bottom surfaces of the semiconductor bodies and the bottom surface of the enclosure body.

In accordance with at least one embodiment, a bottom surface of the at least one electrically conductive connection is freely accessible. For example, a top surface of the at least one electrically conductive connection opposite the bottom surface, which are connected via a side surface, is in direct contact with the bottom surface of the at least one semiconductor chip and the bottom surface of the enclosure body. By contrast, the bottom surface of the at least one electrically conductive connection is freely accessible on the bottom surface of the optoelectronic component and, for example, is not covered by the covering body.

In accordance with at least one embodiment, the bottom surface of the at least one electrically conductive connection is designed as a contact surface. Since the bottom surface of the at least one electrically conductive connection is freely accessible, it can be contacted there, for example, in an electrically conductive manner and thus forms at least one contact surface. Thus, for example, the semiconductor chips can be energized by the at least one electrically conductive connection from the bottom surface.

According to at least one embodiment, a bottom surface of the at least one contact element is freely accessible and is formed as a contact surface. The semiconductor chips are, for example, only electrically conductively connected to one another on the bottom surface of the optoelectronic component. That is, the at least one contact element is free from the at least one electrically conductive connection and thus freely accessible. The bottom surface of the at least one contact element can be contacted there, for example, in an electrically conductive manner and thus forms at least one contact surface.

If the bottom surface of the optoelectronic component has, for example, no electrically conductive connection, the bottom surface of the at least one optoelectronic semiconductor chip is also freely accessible and can be designed, for example, as a contact surface. That is, the bottom surface of the at least one optoelectronic semiconductor chip can be contacted there, for example, in an electrically conductive manner and thus forms at least one contact surface.

In accordance with at least one embodiment of an optoelectronic component with at least two electrically conductive connections, the at least one electrically conductive connection is arranged on the bottom surface and at least one other electrically conductive connection is arranged on the top surface of the optoelectronic component. The at least one electrically conductive connection on the bottom surface of the optoelectronic component, for example, connects the at least two optoelectronic semiconductor chips. The at least one other electrically conductive connection on the top surface of the optoelectronic component, for example, connects the at least two optoelectronic semiconductor chips and the contact element to one another in an electrically conductive manner.

The at least one electrically conductive connection on the bottom surface is electrically contacted, for example, on the bottom surface of the connection. As a result, the radiation-emitting semiconductor chips can be supplied with current at their bottom surfaces. The contact element, for example, also electrically contacted on the bottom surface of the contact element and electrically conductively connected to the at least one other electrically conductive connection to the top surface. This means that the radiation-emitting semiconductor chips can be supplied with current at their top surfaces by these connections.

In accordance with at least one embodiment of an optoelectronic component with at least four electrically conductive connections, at least four optoelectronic semiconductor chips and at least two contact elements, the at least two contact elements and the at least four semiconductor chips are split by the at least two electrically conductive connections on the top surface of the optoelectronic device connected in rows and the at least two other electrically conductive connections connect the at least two semiconductor chips on the bottom surface of the optoelectronic component with each other in rows or columns. The electrically conductive Connections can be contacted, for example, in each case on the bottom surface of the optoelectronic component. In addition, the contact elements can be contacted, for example, in each case via their bottom surface, on the bottom surface of the optoelectronic component. This means that the at least four optoelectronic semiconductor chips can be operated individually with at least four contacts, for example in the manner of a passive matrix display.

The column-wise or row-wise electrically conductive connection of the semiconductor chips and of the contact elements on the top surface of the optoelectronic component and the row-wise or column-wise electrically conductive connection of the semiconductor chips on the bottom surface of the optoelectronic component can be scaled as desired. That is, for example, NxM radiation-emitting semiconductor chips are arranged in an NxM matrix, that is, along N rows and M columns, where N and M are each a natural number greater than or equal to 2. This NxM-sized matrix then has N + M contacts, for example, which can serve to energize the radiation-emitting semiconductor chips. The optoelectronic component then comprises, for example, N or M contact elements and N or M electrically conductive connections to the bottom surface of the optoelectronic component. Advantageously, each of the NxM radiation-emitting semiconductor chips can be controlled individually.

In accordance with at least one embodiment, the at least one contact element comprises an integrated circuit. The integrated circuit is formed, for example, by an application-specific integrated circuit, abbreviated ASIC ("application-specific integrated circuit"). In this case, the integrated circuit comprises, for example, a control unit, an evaluation unit and / or a drive unit. For example, the control unit and the evaluation unit each read and check the state of the at least one radiation-emitting semiconductor chip by means of, for example, the at least one radiation-detecting semiconductor chip. The drive unit may, for example, control the at least two radiation-emitting semiconductor chips and, for example, switch the respective radiation-emitting semiconductor chips on or off.

In addition, a method for producing an optoelectronic component is specified. This method is suitable for producing an optoelectronic component described here. That is, an optoelectronic device described here can be produced by the described method or is produced by the described method. All disclosed in connection with the optoelectronic device features are therefore also disclosed in connection with the method and vice versa.

In accordance with at least one embodiment, the method comprises the step of providing a temporary carrier. For example, "temporary" means that the temporary carrier is removed, for example, in a further method step. For example, the support may be a plate formed with a plastic material, a metal, a ceramic material or a semiconductor material. The temporary carrier forms the mechanically stabilizing component in the steps in which no wrapping body has yet been applied.

In accordance with at least one embodiment, the method comprises the step of applying a film to a top surface of the temporary carrier. The top surface is disposed opposite the bottom surface, and the top surface and bottom surface are interconnected by the at least one side surface. The film is for example a double-sided adhesive film. That is, a bottom surface and a top surface of the film form adhesive forces at room temperature, for example. If the film is heated, for example, then the adhesive forces are reduced. For example, the bottom surface of the film is in direct and direct contact with the top surface of the temporary carrier. Due to the adhesion forces of the bottom surface of the film, the film is mechanically firmly connected to the temporary carrier.

In accordance with at least one embodiment, the method comprises the application of a multiplicity of semiconductor chips to the film. The plurality of semiconductor chips is applied to the top surface of the film, for example. The plurality of semiconductor chips is applied to the film, for example, with a defined pressure force. The bottom surfaces of the semiconductor chips are in direct and direct contact with the top surface of the film. The adhesion forces of the film establish a firm connection of the semiconductor chips on the top surface of the film and prevent slippage of the semiconductor chips in further method steps. The semiconductor chips are applied, for example, by means of a pick and place process.

The optoelectronic semiconductor chips can be arranged, for example, in a matrix, ie arranged along lines and columns, in a plane. That is, the optoelectronic semiconductor chips may be arranged, for example, at grid points of a regular grid. In addition, the optoelectronic semiconductor chips may be formed, for example during operation for generating light of different colors.

In accordance with at least one embodiment, the method comprises the step of applying a plurality of contact elements to the foil. Contact elements can, for example, be arranged in a matrix, ie arranged along rows and columns, in a plane. That is, the contact elements may be arranged, for example, at grid points of a regular grid. The contact elements comprise, for example, an electrically conductive material or consist thereof. The electrically conductive material is, for example, a metal or a semiconductor material. The electrically conductive material contains or consists of silicon, for example.

In accordance with at least one embodiment, the method comprises the step of embedding the semiconductor chips and the contact elements with a cladding material. "Embedding" may mean that the semiconductor chips and the contact elements lie against the wrapping material, lie partially within the wrapping body and / or are enclosed by the wrapping body on at least part of its outer surface.

For example, a frame is applied to the film, which encloses the optoelectronic semiconductor chips and the contact elements like a frame. The term "frame-like" is not to be understood as limiting the shape and the course of the frame. The frame may have, for example, a rectangular, a polygonal, a round or an oval shape. The frame is applied, for example, with a defined contact pressure on the film. The adhesion of the film attach the frame on the top surface of the film and prevent slipping of the frame in the further process steps. For example, the frame projects beyond the top surfaces of the optoelectronic semiconductor chips and the contact elements on a side facing away from the film.

The frame is then filled, for example, with the wrapping material so that the side surfaces of the optoelectronic semiconductor chips and the side surfaces of the contact elements are completely covered, for example, by the wrapping material. The wrapping material is in direct and direct contact with the side surfaces of the semiconductor chips and the side surfaces of the contact elements. For example, a top surface and an opposite bottom surface of the wrapping material are flush with the top surfaces and the bottom surfaces of the semiconductor chips and the top surfaces and bottom surfaces of the contact elements. That is, the top surfaces and bottom surfaces of the semiconductor chips and the contact elements are substantially free of the cladding material. Essentially free means that small quantities of the cladding body are arranged by manufacturing tolerances on the top surfaces and on the bottom surfaces of the semiconductor chips and the contact elements.

Alternatively, it is possible for the side surfaces of the optoelectronic semiconductor chips and the contact elements to be covered by the cladding material only up to a certain height.

The wrapping material is formed, for example, of a matrix material. The matrix material is formed for example from a plastic such as a silicone, an epoxy or an epoxy hybrid material. The plastic may be added, for example, a colorant such as carbon black or a pigment. Thus, the wrapping material may appear black or white or colored.

If the wrapping material is designed to be reflective, for example light-reflecting particles can be introduced into the matrix material. The particles are formed, for example, with at least one of the following materials or contain at least one of the following materials: TiO ₂ , BaSO ₄ , ZnO, Al _x O _y . The wrapping material will be done, for example, by spraying, casting, printing, laminating or the like.

For example, after the step of applying the wrapping material, the wrapping material is hardened into a wrapping body. The cladding body is the mechanically stabilizing component of the optoelectronic device. As the material for the wrapping material, for example, a UV-curing material is used. The advantage of using UV-curing material over a thermosetting material, for example, is that no premature peeling of the film is induced by heating. Alternatively, it is possible for the wrapping material to use, for example, a thermosetting material.

The top surfaces of the semiconductor chip and the contact elements, for example, remain free from the cladding body or are exposed. That is, the wrapping material is applied either so that the cover surface of the semiconductor chips and the contact elements facing away from the carrier is not covered with the wrapping material. Alternatively, after applying and curing the wrapping material, the wrapping body may be removed again from the top surface of the semiconductor chips. The removal can be achieved, for example, by grinding back the wrapping body.

In accordance with at least one embodiment, the method comprises the step of singulating to optoelectronic components, each comprise at least two optoelectronic semiconductor chips, which are designed to emit light of different colors during operation. The arrangement of optoelectronic semiconductor chips, contact elements, cladding body and, if present, temporary carrier and foil is separated into optoelectronic components, for example, by cuts transversely or perpendicular to the top surface of the arrangement. The cuts are produced, for example, by a laser or a saw blade.

In accordance with at least one embodiment of the method, the temporary carrier is removed prior to the step of singulating. For example, the film has adhesive forces only at room temperature. By heating, the film loses, for example, the adhesive forces and loses its adhesive effect. That is, by heating, for example, the device comprising the semiconductor chips, the contact elements and the cladding body is detached from the film. That is also the temporary carrier is removed from the assembly.

According to at least one embodiment of the method, after the step of embedding, a multiplicity of electrically conductive connections are applied to a cover surface of the optoelectronic component. The electrically conductive connections are applied, for example, in places to the top surfaces of the semiconductor chips, the contact elements and to the top surface of the enclosure body. The electrically conductive connections are formed for example with a metal or an electrically conductive adhesive. In addition, the electrical connection may comprise a combination of several metals.

The electrically conductive compounds have, for example, a thickness which, for example, may be between at least 1 μm and at most 15 μm. The thickness of the electrically conductive connections is within the manufacturing tolerance substantially constant over the entire extent of the electrically conductive connection. The electrically conductive compounds have, for example, a width that is large compared to the thickness of the electrically conductive connections. The width of the electrically conductive connections may be, for example, by a factor of 10 or 100 or 1000 greater than the thickness of the electrically conductive connections.

The electrically conductive connections can be generated, for example, by sputtering and / or deposition, for example electroless or galvanic deposition.

In accordance with at least one embodiment of the method, after the removal of the temporary carrier, a multiplicity of electrically conductive connections are applied to a bottom surface of the optoelectronic component. The electrically conductive connections are applied, for example, in places to the bottom surfaces of the semiconductor chips and to the bottom surface of the enclosure body. The electrically conductive connections can be generated, for example, by sputtering and / or deposition, for example electroless or galvanic deposition.

In the following, the optoelectronic components described here as well as the method described here will be explained in more detail on the basis of exemplary embodiments and the associated figures.

• 1A, 1B, 1C, 2A und 2B schematische Schnittdarstellungen in Draufsicht von Ausführungsbeispielen eines hier beschriebenen optoelektronischen Bauteils,
• 3A, 3B, 3C, 3D und 3E schematische Schnittdarstellungen von Verfahrensschritten eines Ausführungsbeispiels eines hier beschriebenen Verfahrens zur Herstellung eines optoelektronischen Bauteils.

Show it:

• 1A . 1B . 1C . 2A and 2 B schematic sectional views in plan view of embodiments of an optoelectronic device described here,
• 3A . 3B . 3C . 3D and 3E schematic sectional views of method steps of an embodiment of a method described here for producing an optoelectronic device.

The same, similar or equivalent elements are provided in the figures with the same reference numerals. The figures and the proportions of the elements shown in the figures with each other are not to be considered to scale. Rather, individual elements may be exaggerated in size for better representability and / or better intelligibility.

The schematic sectional views in plan view of 1A . 1B and 1C show exemplary embodiments of an optoelectronic semiconductor chip described here.

According to 1A includes the optoelectronic component 1 three semiconductor chips, for example, the radiation-emitting semiconductor chips R . G . B are, and a contact element 2 , The radiation-emitting semiconductor chips R . G . B are designed to generate light of different colors during operation. A radiation-emitting semiconductor chip emits light of red color R , another radiation-emitting semiconductor chip emits light of green color G and another radiation-emitting semiconductor chip emits light of blue color B , The radiation-emitting semiconductor chips R . G . B are here laterally spaced in a plane arranged in a triangle. In addition, the contact element 2 laterally spaced in a plane to the radiation-emitting semiconductor chips R . G . B arranged.

A wrapping body 4 surrounds the side surfaces of the radiation-emitting semiconductor chips R . G . B and the side surfaces of the contact element 2 completely. The top surface and the bottom surface of the radiation-emitting semiconductor chips R . G . B and the contact element 2 close with the top surface and the bottom surface of the wrapping body 4 each plan off.

Each radiation-emitting semiconductor chip R . G . B is with the contact element 2 each with an electrically conductive connection 3 on the top surface of the optoelectronic device 1a connected with each other.

The contact element 2 is formed as an anode and can be contacted on the bottom surface of the contact element. In addition, the radiation-emitting semiconductor chips R . G . B are each contacted via their bottom surface and each form a cathode. That is, the optoelectronic component 1 can be energized via a common anode and three different cathodes.

According to 1B are the radiation-emitting semiconductor chips R . G . B laterally spaced apart in a plane along a line. The further features are analogous to the features according to FIG 1A described.

According to 1C and analogously to 1B are the radiation-emitting semiconductor chips R . G . B arranged along a line. The optoelectronic component 1 points in contrast to 1A and 1B no common contact element 2 but includes three contact elements 2 which are laterally spaced apart in a plane along a line. Each radiation-emitting semiconductor chip R . G . B is each with a contact element 2 each with an electrically conductive connection 3 on the top surface of the optoelectronic device 1a connected with each other.

The contact elements 2 are formed as anodes and can be contacted on the bottom surface of the respective contact element. In addition, the radiation-emitting semiconductor chips R . G . B are each contacted via their bottom surface and each form a cathode. That is, the optoelectronic component 1 can be energized via three different anodes and three different cathodes. Here are each radiation-emitting semiconductor chip R . G . B associated with a cathode and an anode.

The schematic sectional views of 2A and 2 B show an embodiment of a radiation-emitting component described here.

According to 2A is the surface of the optoelectronic component 1a shown. The optoelectronic component 1 includes nine radiation-emitting semiconductor chips R . G . B and three contact elements 2 , The radiation-emitting semiconductor chips R . G . B are arranged in a matrix, ie arranged along rows and columns, in one plane. That is, the radiation-emitting semiconductor chips R . G . B are arranged at grid points of a regular grid. In addition, the contact elements 2 laterally spaced apart from the outer radiation-emitting semiconductor chips R . G . B in a plane of radiation-emitting semiconductor chips R . G . B arranged.

The radiation-emitting semiconductor chips R . G . B , which are arranged in a common column, each with a contact element 2 each with an electrically conductive connection 3 on the top surface of the optoelectronic device 1a connected with each other. The electrically conductive connections 3 Thus, in each case connect three radiation-emitting semiconductor chips R . G . B in a common column and one contact element each 2 together.

According to 2 B are the radiation-emitting semiconductor chips R . G . B , which are arranged in a common row, each via an electrically conductive connection 3 on the bottom surface of the optoelectronic device 1b connected with each other. The electrically conductive connection 3 thus connects three radiation-emitting semiconductor chips R . G . B in each case in a row with each other.

The electrically conductive connections may be on the bottom surface of the optoelectronic device 1b each be contacted. In addition, the contact elements 2 each on their bottom surface, on the bottom surface of the optoelectronic device 1b , be contacted. That is, the nine radiation-emitting semiconductor chips R . G . B can be operated individually with six contacts. This technique can be scaled arbitrarily. That is, NxM radiation-emitting semiconductor chips R . G . B can be arranged in an NxM matrix, where N and M each represent a natural number greater than or equal to 2. This NxM matrix is then energized with N + M contacts, each of the NxM radiation-emitting semiconductor chips R . G . B can be controlled individually. The optoelectronic component 1 includes N or M contact elements 3 and N or M electrically conductive compounds 3 on the bottom surface of the optoelectronic device 1b ,

In conjunction with the 3A . 3B . 3C . 3D and 3E an embodiment of a manufacturing method for radiation-described components described here is shown.

According to 3A becomes a temporary carrier 5 provided on the one foil 6 is applied to the top surface of the temporary carrier. The foil 6 is a double-sided adhesive film. The bottom surface and the top surface of the film 6 For example, form adhesive forces at room temperature. Will the film 6 For example, heated, so reduce the adhesive forces. The bottom surface of the film 6 is in direct and direct contact with the top surface of the temporary support 6 , Due to the adhesion forces of the bottom surface of the film 6 is the foil with the temporary carrier 5 mechanically firmly connected.

On the slide 6 become three radiation-emitting semiconductor chips R . G . B and a contact element 2 applied. The radiation-emitting semiconductor chips R . G . B and the contact element 2 are applied to the film with a defined pressure force 6 applied. The adhesion forces of the film 6 attach the radiation-emitting semiconductor chips R . G . B and the contact element 2 on the top surface of the film 6 and prevent slippage of the radiation-emitting semiconductor chips R . G . B and the contact element 2 in further process steps.

In 3B is a schematic sectional view of a side view along the section S1 in 3A shown. The top surfaces of the radiation-emitting semiconductor chips R . G . B and the contact element 2 lie in a common plane. That is, the radiation-emitting semiconductor chips R . G . B and the contact element 2 have the same heights. Furthermore, the elements are on the slide 6 firmly applied.

According to 3C In a further process step, the wrapping material 7 on the top surface of the film 6 applied. The wrapping material 7 covers the side surfaces of the radiation-emitting semiconductor chips R . G . B and the contact element 2 Completed. After the step of applying the wrapping material 7 becomes the wrapping material 7 to a wrapping body 4 hardened.

In addition, for connecting the radiation-emitting semiconductor chips R . G . B and the contact element 2 an electrically conductive connection 3 on the top surface of the optoelectronic device 1a applied. Between the radiation-emitting semiconductor chips R . G . B and between the radiation-emitting semiconductor chip G and the contact element 2 is the electrically conductive connection 3 on the wrapping body 4 arranged.

In the 3D and 3E are schematic sectional views of a side view along the section S2 in 3C shown.

According to 3D closes the top surface of the wrapping material 7 flush with the top surfaces of the radiation-emitting semiconductor chips R . G . B and the contact element 2 from.

According to 3E is before or after separating the temporary carrier 5 and the foil 6 away. By heating, the film loses 6 the adhesive forces and loses their adhesive effect. That is, by heating, the device comprising the radiation-emitting semiconductor chips R . G . B , the contact element 2 and the wrapping body 4 from the slide 6 replaced. This also means the temporary carrier 5 is removed from the assembly.

The invention is not limited by the description based on the embodiments of these. Rather, the invention encompasses any novel feature as well as any combination of features, including in particular any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the claims or exemplary embodiments.

LIST OF REFERENCE NUMBERS

1

opto-electronic component

1a

Cover surface optoelectronic component

1b

Floor surface optoelectronic component

R

optoelectronic semiconductor chip, red light

G

optoelectronic semiconductor chip, green light

B

optoelectronic semiconductor chip, blue light

2

contact element

3

connection

4

covering body

5

temporary carrier

6

foil

7

wrapping material

S1

cut 1

S2

cut 2

Claims (17)

Optoelectronic component (1) with - at least two optoelectronic semiconductor chips (R, G, B), which are designed to emit or detect light of different colors during operation, - a contact element (2), for electrically contacting at least one of the optoelectronic semiconductor chips ( R, G, B), - an electrically conductive connection (3) which electrically conductively connects at least one of the optoelectronic semiconductor chips (R, G, B) to the contact element (2), and - a cladding body (4) which is electrically insulating, wherein - the optoelectronic semiconductor chips ( R, G, B) and the contact element (2) are embedded in the covering body (4), and - the electrically conductive connection (3) is arranged in places on the covering body (4). Optoelectronic component (1) according to the preceding claim with at least two electrically conductive connections (3), in which the at least two electrically conductive connections (3) the contact element (2) and one of the at least two optoelectronic semiconductor chips (R, G, B) connect electrically conductive. Optoelectronic component (1) after the Claim 1 with at least two contact elements (2) and at least two electrically conductive connections (3), in which the at least two electrically conductive connections (3) each have one of the at least two contact elements (2) and one of the at least two optoelectronic semiconductor chips (R, G, B) electrically conductively connect. Optoelectronic component (1) according to one of the preceding claims, in which the at least one electrically conductive connection (3) is arranged on a cover surface of the optoelectronic component (1a). Optoelectronic component (1) according to one of the preceding claims, in which the at least one electrically conductive connection (3) electrically conductively connects the at least two optoelectronic semiconductor chips (R, G, B) to one another. Optoelectronic component (1) according to the preceding claim, in which the at least one electrically conductive connection (3) is arranged on a bottom surface of the optoelectronic component (1b). Optoelectronic component (1) according to the preceding claim, wherein a bottom surface of the at least one electrically conductive connection (3) is freely accessible. Optoelectronic component (1) according to the preceding claim, wherein the bottom surface of the at least one electrically conductive connection (3) is designed as a contact surface. Optoelectronic component (1) according to one of the preceding claims, in which a bottom surface of the at least one contact element (2) is freely accessible and is designed as a contact surface. Optoelectronic component (1) according to one of the preceding claims with at least two electrically conductive connections (3), in which the at least one electrically conductive connection (3) on the bottom surface (1b) and at least one electrically conductive connection (3) on the top surface of the optoelectronic component (1a) is arranged. Optoelectronic component (1) according to the preceding claim with at least four electrically conductive connections (3), at least four optoelectronic semiconductor chips (R, G, B) and at least two contact elements (2), in which - The at least two contact elements (2) and the at least four optoelectronic semiconductor chips (R, G, B) by the at least two electrically conductive connections (3) on the top surface of the optoelectronic device (1a) are connected to each other in columns or lines, and - At least two further electrically conductive connections (3), the line at least four optoelectronic semiconductor chips (R, G, B) on the bottom surface of the optoelectronic device (1b) line or connect columns. Optoelectronic component (1) according to one of the preceding claims, in which the at least one contact element (2) comprises an integrated circuit. Method for producing an optoelectronic component (1) with the following steps: Providing a temporary carrier (5), Applying a film (6) to a top surface of the temporary carrier (5), Applying a plurality of optoelectronic semiconductor chips (R, G, B) to the film (6), Applying a plurality of contact elements (2) to the film (6), Embedding the optoelectronic semiconductor chips (R, G, B) and the contact elements (2) with a cladding material (7), - Separate to optoelectronic components (1), each comprising at least two optoelectronic semiconductor chips (R, G, B), which are adapted to emit light of different colors in operation or to detect include. Method according to the preceding claim, wherein the temporary carrier (5) is removed before the step of singulating. Procedure after the previous one Claim 13 wherein the temporary carrier (5) is removed after the step of singulating. Method according to one of the preceding claims, wherein after the step of embedding on a plurality of electrically conductive connections (3) a top surface of the optoelectronic component (1a) is applied. Method according to one of the preceding claims, wherein after the removal of the temporary carrier (5) a plurality of electrically conductive connections (3) is applied to a bottom surface of the optoelectronic component (1b).

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