EP2465145A2 - Verfahren zur herstellung einer emitter-elektrode für eine kristalline siliziumsolarzelle und entsprechende siliziumsolarzelle - Google Patents
Verfahren zur herstellung einer emitter-elektrode für eine kristalline siliziumsolarzelle und entsprechende siliziumsolarzelleInfo
- Publication number
- EP2465145A2 EP2465145A2 EP10741995A EP10741995A EP2465145A2 EP 2465145 A2 EP2465145 A2 EP 2465145A2 EP 10741995 A EP10741995 A EP 10741995A EP 10741995 A EP10741995 A EP 10741995A EP 2465145 A2 EP2465145 A2 EP 2465145A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- paste
- front contact
- solar cell
- recess
- silicon solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 34
- 239000010703 silicon Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims description 8
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 7
- 239000002923 metal particle Substances 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000002105 nanoparticle Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 1
- 239000000976 ink Substances 0.000 description 6
- 238000007650 screen-printing Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 2
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910000464 lead oxide Inorganic materials 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 238000005246 galvanizing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- the invention relates to a method for producing a front-side emitter electrode as a front contact for a crystalline silicon solar cell on a silicon wafer and a silicon solar cell produced by such a method.
- a printed conductor is usually printed by screen printing on a front-side n-doped silicon layer with an antireflection layer thereon.
- This can currently be printed with a width of about 120 ⁇ m to 150 ⁇ m, so that the front contact has approximately this width. With this width, it then shields the solar cell, which has a clear and negative effect on the usual number of front contacts.
- the production of narrower tracks by screen printing is currently very difficult technically possible, since screen printing process have a certain limited resolution and thus very difficult to make narrower tracks can be applied.
- the invention has for its object to provide an aforementioned method and a silicon solar cell made therewith, with which problems of the prior art can be avoided and in particular the smallest possible front contacts can be made.
- a recess for the front contact is generated in the front side of the silicon wafer.
- a front-side n-doped silicon layer is produced in a known manner and applied thereon to a conventional antireflection layer.
- the recess can thus have the shape that will later specify the shape for the front contact, ie in particular as an elongated narrow line.
- a paste is introduced into the depression, which contains electrically conductive metal particles and corrosive glass frit. This paste is then briefly heated or tempered, in particular for a few seconds, which can be done, for example, with a temperature of about 800 0 C.
- the paste in particular through the glass frit, etches through the antireflection layer through up to the n-doped silicon layer and can contact it electrically via the metal particles.
- another Step is then galvanically deposited or applied in the recess on the annealed paste or the electrically conductive layer formed by it.
- the thickness of the front contact metal is then advantageously significantly higher than that of the annealed paste or the electrically conductive layer formed by it, so that then this front contact metal as a front contact or front emitter electrode takes over the actual task of electrical conductivity.
- the width of the then resulting front contact can be specified by the depression, which is advantageously designed as a kind of trench, or whose width. If the depression is produced with a width of between 50 ⁇ m and 100 ⁇ m, advantageously between 60 ⁇ m and 80 ⁇ m, this is also the maximum width of the resulting front contact. So it can be half as wide as it used to be. As a result, just a much lower shading is achieved than before.
- a depression can be produced with a depth of, for example, 15 ⁇ m to 40 ⁇ m, so that its width is greater than its depth.
- An effect of the depression is namely that the paste, if it is rather thin, can not run as desired on a flat surface as in screen printing. It can also be used very low viscosity pastes or inks. This, in turn, simplifies the application of the paste or ink, advantageously by an ink jet method known per se to the person skilled in the art or by an ink jet method with a so-called ink jet printer. This can be done in particular with relatively high accuracy or high resolution in the narrow recesses or trenches into it. This is generally not so good with screen printing and above all not without problems over a longer period of time without clogging the screens and thus having to wait frequently.
- the paste or ink which may be a kind of standard paste for such an electrically conductive contact per se, may be contained as electrically conductive particles nanoparticles with silver. This may be, for example, silver provided with a thin coating. These nanoparticles may constitute about 30% to 70% of the solids content of the paste, preferably about 40% to 60% or about half.
- the etching glass frit in the paste may be formed as usual, for example with lead and / or cadmium oxide.
- the depression can on the one hand mechanically by scoring or the like. be generated.
- lasers have proved to be advantageous, which works quickly and accurately and results in depressions with the desired dimensions.
- the recess does not have to be completely filled by the front contact metal, in particular it should even be avoided to completely fill it. If, after all, there should still be some front-contact metal deposited over the depression, there is a risk that this would accumulate with a conventional attachment characteristic with a width beyond the depressions. Then, in turn, the shading would become undesirably large. Therefore, it is also considered sufficient to fill the deepening to about half, possibly a little more.
- a finished metallic front contact of the silicon solar cell can then have a height of about 10 .mu.m to 20 .mu.m, which results in a sufficient electrical conductivity.
- Fig. 1 to 5 different processing steps of a silicon wafer for generating a front contact.
- a crystalline silicon wafer 11 is shown in lateral section. It has an upwardly facing front side 12. The wafer is to be processed into a silicon solar cell.
- a depression 14 in the manner of a trench is introduced into the front side 12 by means of a laser 15.
- the recess 14 may have a width of 60 ⁇ m to 80 ⁇ m and a depth of 20 ⁇ m to 30 ⁇ m.
- the special design of the recess 14 is not always quite rectangular as shown here, but this does not bother. It is important that there is a depression or a kind of ditch.
- an n-doped silicon layer 16 is produced on the front side 12 in a known manner. Then, a conventional antireflection coating 17 is applied in a known manner. These two layers then have just the recess 14 and the recess 14 is still present.
- a previously described paste 19 is introduced into the depression 14 by means of an inkjet printer 18.
- the paste 19 may be composed according to the criteria mentioned above and has, as a solids content, nanoparticles with silver, for example about 50% by weight. of the solids content. Furthermore, the paste still has corrosive glass frit, in particular lead or cadmium oxide, which is also known per se.
- the amount of applied paste 19 in the recess 14 may vary.
- Fig. 5 is then shown how, advantageously supported by illumination in the manner described above, galvanically front contact metal 21 has been applied.
- This front contact metal 21 is significantly thicker than the paste 19 and due to its composition also much better electrically conductive. It can accumulate very well on the conductive layer formed by the tempered paste.
- the front contact metal 21 may consist of or comprise the above-described metals nickel, copper and tin, which are then applied successively in three galvanic steps.
- the thus formed in total front contact 22 can fill the recess 14 about half, but possibly also a little more. It should only be taken to ensure that the front contact metal 21 does not get on the flat front side 12 and spreads there. On the one hand, copper could once again enter the silicon, which should be avoided for the aforementioned reasons. In addition, shadowing of the front side 12 of a silicon wafer 11 would then again be produced.
- the crystalline silicon solar cell will increase as it covers more than the width of the well.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009038141A DE102009038141A1 (de) | 2009-08-13 | 2009-08-13 | Verfahren zur Herstellung einer Emitter-Elektrode auf eine kristalline Siliziumsolarzelle und entsprechende Siliziumsolarzelle |
PCT/EP2010/061797 WO2011018507A2 (de) | 2009-08-13 | 2010-08-12 | Verfahren zur herstellung einer emitter-elektrode für eine kristalline siliziumsolarzelle und entsprechende siliziumsolarzelle |
Publications (1)
Publication Number | Publication Date |
---|---|
EP2465145A2 true EP2465145A2 (de) | 2012-06-20 |
Family
ID=43448364
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP10741995A Withdrawn EP2465145A2 (de) | 2009-08-13 | 2010-08-12 | Verfahren zur herstellung einer emitter-elektrode für eine kristalline siliziumsolarzelle und entsprechende siliziumsolarzelle |
Country Status (13)
Country | Link |
---|---|
US (1) | US20120204946A1 (de) |
EP (1) | EP2465145A2 (de) |
JP (1) | JP2013502064A (de) |
KR (1) | KR20120047287A (de) |
CN (1) | CN102687280A (de) |
AU (1) | AU2010283702A1 (de) |
CA (1) | CA2771013A1 (de) |
DE (1) | DE102009038141A1 (de) |
IL (1) | IL218040A0 (de) |
MX (1) | MX2012001900A (de) |
SG (1) | SG178373A1 (de) |
TW (1) | TW201130149A (de) |
WO (1) | WO2011018507A2 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9379258B2 (en) * | 2012-11-05 | 2016-06-28 | Solexel, Inc. | Fabrication methods for monolithically isled back contact back junction solar cells |
US9515217B2 (en) | 2012-11-05 | 2016-12-06 | Solexel, Inc. | Monolithically isled back contact back junction solar cells |
DE102013108422A1 (de) * | 2013-08-05 | 2015-02-05 | Universität Konstanz | Verfahren zum Erzeugen dotierter oder metallisierter Bereiche in einem Solarzellensubstrat sowie entsprechende Solarzelle |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4726850A (en) * | 1984-03-26 | 1988-02-23 | Unisearch Limited | Buried contact solar cell |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4703553A (en) * | 1986-06-16 | 1987-11-03 | Spectrolab, Inc. | Drive through doping process for manufacturing low back surface recombination solar cells |
US5053083A (en) * | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
US5258077A (en) * | 1991-09-13 | 1993-11-02 | Solec International, Inc. | High efficiency silicon solar cells and method of fabrication |
ES2096008T3 (es) | 1991-11-11 | 1997-03-01 | Solar Gmbh Siemens | Procedimiento para la generacion de estructuras de electrodos finas. |
DE59310390D1 (de) * | 1992-03-20 | 2006-10-12 | Shell Solar Gmbh | Herstellungsverfahren einer Solarzelle mit kombinierter Metallisierung |
US6162658A (en) * | 1996-10-14 | 2000-12-19 | Unisearch Limited | Metallization of buried contact solar cells |
AUPO638997A0 (en) * | 1997-04-23 | 1997-05-22 | Unisearch Limited | Metal contact scheme using selective silicon growth |
EP1295346A4 (de) * | 2000-05-05 | 2006-12-13 | Unisearch Ltd | Metallische kontakte von geringer kontaktfläche für photovoltaische vorrichtungen |
JP4121928B2 (ja) * | 2003-10-08 | 2008-07-23 | シャープ株式会社 | 太陽電池の製造方法 |
US7335555B2 (en) * | 2004-02-05 | 2008-02-26 | Advent Solar, Inc. | Buried-contact solar cells with self-doping contacts |
DE102005045704A1 (de) * | 2005-09-19 | 2007-03-22 | Gebr. Schmid Gmbh & Co. | Verfahren und Vorrichtung zur Bearbeitung von Substraten, insbesondere Solarzellen |
US20080035489A1 (en) * | 2006-06-05 | 2008-02-14 | Rohm And Haas Electronic Materials Llc | Plating process |
-
2009
- 2009-08-13 DE DE102009038141A patent/DE102009038141A1/de not_active Withdrawn
-
2010
- 2010-08-12 KR KR1020127006330A patent/KR20120047287A/ko not_active Application Discontinuation
- 2010-08-12 CN CN2010800360473A patent/CN102687280A/zh active Pending
- 2010-08-12 JP JP2012524237A patent/JP2013502064A/ja active Pending
- 2010-08-12 AU AU2010283702A patent/AU2010283702A1/en not_active Abandoned
- 2010-08-12 WO PCT/EP2010/061797 patent/WO2011018507A2/de active Application Filing
- 2010-08-12 MX MX2012001900A patent/MX2012001900A/es not_active Application Discontinuation
- 2010-08-12 SG SG2012009643A patent/SG178373A1/en unknown
- 2010-08-12 CA CA2771013A patent/CA2771013A1/en not_active Abandoned
- 2010-08-12 EP EP10741995A patent/EP2465145A2/de not_active Withdrawn
- 2010-08-13 TW TW099127155A patent/TW201130149A/zh unknown
-
2012
- 2012-02-09 IL IL218040A patent/IL218040A0/en unknown
- 2012-02-10 US US13/371,139 patent/US20120204946A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4726850A (en) * | 1984-03-26 | 1988-02-23 | Unisearch Limited | Buried contact solar cell |
Non-Patent Citations (3)
Title |
---|
COLE A ET AL: "Fine-Line Screen Printing In Large Area Laser Grooved, Buried Contact Silicon Solar Cells", 23RD EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, EU PVSEC ; PROCEEDINGS OF THE INTERNATIONAL CONFERENCE, HELD IN VALENCIA, SPAIN, 1 - 5 SEPTEMBER 2008, 1 September 2008 (2008-09-01), pages 1677 - 1681, XP040529107, ISBN: 978-3-936338-24-9 * |
EAGER S ET AL: "Environmentally Friendly Processes In The Manufacture Of Saturn Solar Cells", CONFERENCE RECORD OF THE 29TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 200, vol. CONF. 29, 19 May 2002 (2002-05-19), pages 62 - 65, XP010666238, ISBN: 978-0-7803-7471-3, DOI: 10.1109/PVSC.2002.1190456 * |
See also references of WO2011018507A2 * |
Also Published As
Publication number | Publication date |
---|---|
WO2011018507A2 (de) | 2011-02-17 |
KR20120047287A (ko) | 2012-05-11 |
CN102687280A (zh) | 2012-09-19 |
DE102009038141A1 (de) | 2011-02-17 |
TW201130149A (en) | 2011-09-01 |
JP2013502064A (ja) | 2013-01-17 |
IL218040A0 (en) | 2012-04-30 |
US20120204946A1 (en) | 2012-08-16 |
WO2011018507A3 (de) | 2011-05-19 |
MX2012001900A (es) | 2012-09-07 |
SG178373A1 (en) | 2012-03-29 |
CA2771013A1 (en) | 2011-02-17 |
AU2010283702A1 (en) | 2012-03-01 |
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Inventor name: KIENINGER, KAY Inventor name: HAVERKAMP, HELGE Inventor name: MITZINNECK, PETRA Inventor name: SOLLNER, JUERGEN |
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