EP2415902A2 - Procédé destiné à la fabrication d'une couche de CuSCN nanocristalline sur un substrat - Google Patents

Procédé destiné à la fabrication d'une couche de CuSCN nanocristalline sur un substrat Download PDF

Info

Publication number
EP2415902A2
EP2415902A2 EP11075187A EP11075187A EP2415902A2 EP 2415902 A2 EP2415902 A2 EP 2415902A2 EP 11075187 A EP11075187 A EP 11075187A EP 11075187 A EP11075187 A EP 11075187A EP 2415902 A2 EP2415902 A2 EP 2415902A2
Authority
EP
European Patent Office
Prior art keywords
substrate
cuscn
bath
temperature
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11075187A
Other languages
German (de)
English (en)
Other versions
EP2415902A8 (fr
EP2415902A3 (fr
Inventor
Björn Latzel
Abdelhak Belaidi
Klaus Schwarzburg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH
Original Assignee
Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH filed Critical Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH
Publication of EP2415902A2 publication Critical patent/EP2415902A2/fr
Publication of EP2415902A3 publication Critical patent/EP2415902A3/fr
Publication of EP2415902A8 publication Critical patent/EP2415902A8/fr
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/04—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229—Composition of the substrate
    • C23C18/1245—Inorganic substrates other than metallic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1291—Process of deposition of the inorganic material by heating of the substrate

Definitions

  • the invention relates to a method for producing a thin nanocrystalline CuSCN layer on a substrate.
  • copper thiocyanate layers a p-type semiconductor material, are produced by various methods.
  • CuSCN layers are deposited in an aqueous basic (pH ⁇ 9) solution, which results in Journal of the American Ceramic Society, vol. 90, 2007, pp. 2966-2973 is described. Also by means of electrodeposition, a CuSCN layer is deposited on a porous TiO 2 - layer and fills the pores of this layer completely, as in WO 00/52764 A1 described.
  • H54-H57 describes the preparation of a transparent CuSCN layer by means of thermal vapor deposition first of a Cu layer, then a KSCN layer and subsequent reaction of both layers in a drying vessel with silica gel as drying agent for up to 24 hours. Depending on the reaction time, the transparency of the resulting CuSCN layer is improved.
  • a CuSCN layer in a saturated solution of CuSCN and dipropyl sulfide is deposited on a preheated to 80 ° C sample of the structure glass / SnO 2 : F / ZnO sp / ZnO ed / CdSe.
  • the CuSCN layer fills the nanostructured ZnO layer.
  • DE 101 42 913 A1 describes a transistor arrangement in which the microholes of a composite film, consisting of two plastic films with intermediate metal layer, vertically filled with p-type CuSCN by means of chemical bath deposition. Further details on the parameters of the deposition are not mentioned here.
  • the object of the invention is therefore to provide a further method by means of chemical bath deposition thin transparent nanocrystalline CuCSN layers, which is inexpensive, works well on non-conductive substrates and without seed layer and no toxic solvent needed.
  • the object is achieved in that in the chemical bath deposition according to the invention first the surface of the substrate is activated and then the substrate and the aqueous solution are adjusted to different temperatures, the temperature of the substrate is set higher than the temperature of the solution, and an aqueous Solution with 0.1 to 200 mM Cu (II) - and SCN ions is used, and the substrate is bathed by this bath solution.
  • the substrate / the substrate surface is heated to a temperature between 5 and 200 ° C and the aqueous solution is maintained at a temperature between 0 ° C and 100 ° C.
  • concentration of the Cu II and SCN ions is adjusted so that the aqueous solution is metastable and little or no CuSCN precipitates.
  • ion sources the state of the art is known for CuS0 4 and KSCN.
  • the Cu (II) and SCN-ion solution can also be prepared at temperatures of 0 to 25 ° C from prediluted solutions with thorough mixing to the stability of the bath solution increase and avoid early precipitation of CuSCN.
  • other water-soluble copper and thiocyanate ion sources can be used, such as copper (II) acetate, cupric chloride, ammonium thiocyanate or sodium thiocyanate.
  • Both the morphology of the Cu (I) SCN layers and the nature of the crystal phase ( ⁇ - or ⁇ -CuSCN) is determined by the Cu (II) and SCN initial concentration, the temperature gradient between substrate and solution, the surface-active additives and Badkonvetation affected.
  • a non- or bad conductive substrate can be used, for example, silicon or glass or a polyimide film.
  • silicon or glass or a polyimide film On substrates with high thermal conductivity and heat resistance higher deposition rates can be achieved.
  • the process according to the invention does not use expensive organic, partly toxic solvents (eg acetonitrile or dipropylsulfide) as in the "impregnation" method and, compared to the sequential SILAR technique, higher deposition rates can be achieved.
  • expensive organic, partly toxic solvents eg acetonitrile or dipropylsulfide
  • PEG polyethylene glycol
  • SLS sodium lauryl sulfate
  • the application of such a CuSCN seed layer to the substrate can influence the morphology of the CuSCN layer to be subsequently deposited.
  • the substrate A to be coated is in the in FIG. 1 installed schematically illustrated cell.
  • the flow cell B consists of polyether ketone (PEEK) and a Viton O-ring C.
  • the bath D flows through the chamber has dimensions of about 14 mm wide, 17 mm long and 1.5 mm high.
  • the heater E consists of an aluminum block (60 mm width, 70 mm length and 10 mm height), which is held by four electric heating elements (each 60 W power) by means of a PID controller at a constant temperature (T heating ).
  • the bath supply vessel with a volume (V total ) is mixed by means of a magnetic stirrer, via a temperature sensor, the bath temperature (T bath ) is monitored and optionally controlled by a thermostat.
  • the inlets and outlets F of the cell are connected to a storage vessel via a peristaltic pump , which regulates the volume flow (v pump ) of the bath. Furthermore, the process is characterized by the deposition time ( t deposition ).
  • the substrates are each degreased for 5 minutes in 3% Mucasol solution in an ultrasonic bath, then rinsed with tap water, deionized water and isopropanol and dried in a stream of nitrogen.
  • reaction solutions are prepared from prediluted solutions of CuSO 4 and KSCN with vigorous stirring at the lowest possible temperature to minimize precipitation of Cu (I) SCN.
  • the substrate heating is switched on and only when the target temperature is reached, the solution is pumped through the flow cell and the deposition begins. At the end of this, the substrate heater is turned off, the heater block is actively cooled with water, and the cell is rinsed with 20 ml of deionized water. Subsequently, the substrate is removed from the cell and rinsed again with deionized water and isopropanol and dried in a stream of nitrogen.
  • the parameters are varied during the coating of a Si substrate in four variants.
  • a 0.4 mm thick Si substrate is introduced into the cell.
  • the heating is set to 150 ° C, thus increasing the bath temperature from 20 ° C to 98 ° C in the described arrangement.
  • the duration of the deposition is set to 10 min.
  • the sample is covered with a fine-crystalline CuSCN film about 1.5 ⁇ m thick, as in Fig. 2 recognizable.
  • the Si substrate is now placed in a bath solution containing 10 g / l PEG200 in high concentration, the bath temperature is thereby increased from 18 ° C to 38 ° C and carried out the deposition over 180 min.
  • the result is a very inhomogeneous deposition of large crystallites predominantly in the ⁇ -Cu (I) SCN modification.
  • aqueous bath solution SLS is added in a low concentration of 0.2 g / l and only a deposition time of 10 min is carried out (Variant IV ) , only a very thin layer ( ⁇ 200 nm) of hexagonal crystals grows on the Si substrate, but not yet formed closed.
  • the heating temperature T heating is 95 ° C, the temperature of the chemical bath rises from 18 ° C to 38 ° C with active cooling.
  • the chemical bath solution was rinsed over the Si substrate for 180 minutes. As a result, a very homogeneous deposition of very large crystallites was observed predominantly in the ⁇ -Cu (I) SCN modification, as in Fig. 5 recognizable.
  • a CuSCN layer is applied to a 1.0 mm thick soda-lime glass.
  • the bath was then pumped through the cell at 5.4 l / h and heated from 20 ° C to 88 ° C over a period of 120 min by means of additional heating. After completion of the deposition process, the surface of the soda-lime glass is covered with an about 4 .mu.m thick Cu (l) SCN film, as in Fig. 6 shown. According to XRD analysis - s. FIG. 7 All peaks can be assigned to the ⁇ - or ⁇ -CuSCN modification.
  • a conductive substrate is used and a CuSCN layer is applied to a 1.0 mm thick aluminum substrate.
  • the deposition takes place at a heating temperature of 150 ° C.
  • the bath temperature rises from 20 ° C to 100 ° C.
  • the hot Al substrate is rinsed with the bath solution for 5 min.
  • On the sample grows a microstructure, which consists of large platelet-shaped crystallites (s. Fig. 8 ).
  • the XRD analysis of the grown-up layer yields maxima which are attributed to the ⁇ - and - the predominant - ⁇ -CuSCN modification as well as the aluminum of the substrate.
  • the bath temperature rises from 20 ° C to 70 ° C at a heating temperature of 160 ° C.
  • the sample is lapped for 10 minutes by the bath solution, this process is repeated again.
  • the polyimide film is overgrown at the edges with a CuSCN layer of the ⁇ - and ⁇ -CuSCN modifications, but only sporadic crystal growth is observed in the center of the film.
  • Fig. 9 shows an SEM image of only the edge region of the sample with a dense growth of a CuSCN layer.
  • the exemplary embodiments prove that the method according to the invention, using chemical bath deposition, makes it possible to deposit thin transparent CuSCN layers on different substrates.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemically Coating (AREA)
EP11075187A 2010-08-03 2011-08-02 Procédé destiné à la fabrication d'une couche de CuSCN nanocristalline sur un substrat Withdrawn EP2415902A3 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201010033198 DE102010033198B4 (de) 2010-08-03 2010-08-03 Verfahren zur Herstellung einer nanokristallinen CuSCN-Schicht auf einem Substrat

Publications (3)

Publication Number Publication Date
EP2415902A2 true EP2415902A2 (fr) 2012-02-08
EP2415902A3 EP2415902A3 (fr) 2012-03-14
EP2415902A8 EP2415902A8 (fr) 2012-04-04

Family

ID=44582029

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11075187A Withdrawn EP2415902A3 (fr) 2010-08-03 2011-08-02 Procédé destiné à la fabrication d'une couche de CuSCN nanocristalline sur un substrat

Country Status (2)

Country Link
EP (1) EP2415902A3 (fr)
DE (1) DE102010033198B4 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108793197A (zh) * 2018-03-01 2018-11-13 复旦大学 银掺杂硫氰酸亚铜薄膜及其制备方法和应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000052764A1 (fr) 1999-02-26 2000-09-08 Hahn-Meitner-Institut Berlin Gmbh Depot electrochimique de cuscn dans des films tio2 poreux
DE10142913A1 (de) 2001-08-27 2003-03-27 Hahn Meitner Inst Berlin Gmbh Transistoranordnung und Verfahren zu deren Herstellung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100552095C (zh) * 2007-07-27 2009-10-21 中国科学院上海硅酸盐研究所 一种液相条件下制备硫氰酸亚铜薄膜的方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000052764A1 (fr) 1999-02-26 2000-09-08 Hahn-Meitner-Institut Berlin Gmbh Depot electrochimique de cuscn dans des films tio2 poreux
DE10142913A1 (de) 2001-08-27 2003-03-27 Hahn Meitner Inst Berlin Gmbh Transistoranordnung und Verfahren zu deren Herstellung

Non-Patent Citations (10)

* Cited by examiner, † Cited by third party
Title
ADV. MAT, vol. 17, 2005, pages 1512 - 1515
APPL. PHYS. LETT., vol. 93, 2008, pages 053113
BERICHTE DER DEUTSCHEN CHEMISCHEN GESELLSCHAFT (A AND B SERIES, vol. 69, 1936, pages 1601 - 1610
CHEMISTRY OF MATERIALS, vol. 14, pages 5023 - 5029
ELECTROCHEM. AND SOLID-STATE LETTERS, vol. 12, no. 3, 2009, pages H54 - H57
JOURNAL OF PHYSICS D: APPLIED PHYSICS, vol. 31, 1998, pages 2326 - 2330
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, vol. 90, 2007, pages 2966 - 2973
SOLAR ENERGY MATERIALS & CELLS, vol. 86, 2005, pages 443 - 450
SOLAR ENERGY MATERIALS & SOLAR CELLS, vol. 58, 1999, pages 337 - 347
THIN SOLID FILMS, vol. 451-452, March 2004 (2004-03-01), pages 128 - 132

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108793197A (zh) * 2018-03-01 2018-11-13 复旦大学 银掺杂硫氰酸亚铜薄膜及其制备方法和应用
CN108793197B (zh) * 2018-03-01 2021-08-20 复旦大学 银掺杂硫氰酸亚铜薄膜及其制备方法和应用

Also Published As

Publication number Publication date
DE102010033198B4 (de) 2013-04-04
EP2415902A8 (fr) 2012-04-04
DE102010033198A1 (de) 2012-02-09
EP2415902A3 (fr) 2012-03-14

Similar Documents

Publication Publication Date Title
EP2051936B1 (fr) Procédé permettant la production de nanoparticules oxydées à partir d'un matériau qui forme des particules d'oxyde
DE102013109394B4 (de) Anodische Oxidschicht und Verfahren zur Herstellung derselben
DE69025495T2 (de) Abscheidung von Silberschichten auf nichtleitenden Substraten
EP2398934B1 (fr) Procede pour la fabrication des cuoches d'oxyde d'indium semiconducteurs, articles obtenues et utilisation de cettes couches
DE102007010872A1 (de) Verfahren zur Präzisionsbearbeitung von Substraten und dessen Verwendung
DE69231779T2 (de) Herstellungsverfahren von ohmschen Kontakten und photovoltaische Zelle mit ohmschem Kontakt
EP1792348B1 (fr) Procede pour appliquer une couche tampon de sulfure de zinc sur un substrat semiconducteur par depot en bain chimique, en particulier sur la couche absorbante d'une cellule solaire en couches minces a base de chalcopyrite
EP3053186A1 (fr) Dispositif et procédé de production en continu de couches de silicium poreuses
WO2009006988A1 (fr) Structure de contact pour un composant semi-conducteur et son procédé de fabrication
EP2252728A2 (fr) Procédé d'électrodéposition pour la production de zno nanostructuré
WO2011092236A2 (fr) Solution de dépôt en bain chimique pour dépôt chimique par voie humide d'une couche de sulfure métallique et procédé de production associé
WO2001086029A1 (fr) Couches formees par voie electrochimique et servant de protection anticorrosion ou de peinture primaire reactive
WO2004023529A2 (fr) Procede et dispositif pour traiter thermiquement des plaquettes semi-conductrices
DE102010033198B4 (de) Verfahren zur Herstellung einer nanokristallinen CuSCN-Schicht auf einem Substrat
DE102018203256A1 (de) Verfahren zum Einbringen eines photovoltaisch aktiven Materials in ein eine Vielzahl von Zellen aufweisendes photovoltaisches Modul und entsprechendes photovoltaisches Modul
EP2411558B1 (fr) Procédé pour appliquer une couche tampon de zn(s, o) sur un substrat semi-conducteur par dépôt par bain chimique
DE102010030884A1 (de) Verfahren zur Abscheidung einer Pufferschicht auf einer CIS-Dünnschicht-Solarzelle und nach dem Verfahren hergestellte CIS-Dünnschicht-Solarzelle
DE102020113518B4 (de) Verfahren zur Herstellung einer Schicht aus Bismutvanadat
DE10330192A1 (de) Elektrisch leitender Körper mit einer Haftvermittlungsschicht sowie Verfahren zum Abscheiden einer Haftvermittlungsschicht
DE102012023349B4 (de) Verfahren und Vorrichtung zur strukturierten Beschichtung der Innenseite eines Schlauchs oder Rohrs
DE102008037177B4 (de) Verfahren zur Herstellung nanostrukturierter Metalloxide oder -chalkogenide mittels chemischer Badabscheidung
DE102007006455B4 (de) Wärmereservoir und Verfahren zur Bearbeitung eines mit einem Wärmereservoir thermisch gekoppelten Substrates sowie Verwendung eines Wärmetransportmediums
WO2022253385A1 (fr) Procédé de fabrication d'absorbeurs à large bande à positionnement très précis pour surfaces 2d et 3d
EP1448808B1 (fr) Procede de fabrication de revetements fins peu solubles
AT515522B1 (de) Verfahren zur elektrochemischen abscheidung halbleitender materialien und elektrolyten hierzu

Legal Events

Date Code Title Description
AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

RIC1 Information provided on ipc code assigned before grant

Ipc: C23C 18/12 20060101AFI20120209BHEP

17P Request for examination filed

Effective date: 20120914

RIC1 Information provided on ipc code assigned before grant

Ipc: C23C 18/04 20060101ALI20130129BHEP

Ipc: C23C 18/12 20060101AFI20130129BHEP

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

INTG Intention to grant announced

Effective date: 20130627

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20131108