EP2411781A1 - Capteur de pression - Google Patents

Capteur de pression

Info

Publication number
EP2411781A1
EP2411781A1 EP10711204A EP10711204A EP2411781A1 EP 2411781 A1 EP2411781 A1 EP 2411781A1 EP 10711204 A EP10711204 A EP 10711204A EP 10711204 A EP10711204 A EP 10711204A EP 2411781 A1 EP2411781 A1 EP 2411781A1
Authority
EP
European Patent Office
Prior art keywords
pressure sensor
mounting surface
membrane
pressure
sensor according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP10711204A
Other languages
German (de)
English (en)
Inventor
Michael Philipps
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Endress and Hauser SE and Co KG
Original Assignee
Endress and Hauser SE and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Endress and Hauser SE and Co KG filed Critical Endress and Hauser SE and Co KG
Publication of EP2411781A1 publication Critical patent/EP2411781A1/fr
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms

Definitions

  • the present invention relates to a pressure sensor, in particular a pressure sensor with a monocrystalline membrane body, which has a measuring membrane and a measuring membrane surrounding edge region, and a monocrystalline substrate body, wherein the membrane body along a mounting surface of the edge region is fixedly connected to the substrate body.
  • pressure sensors are manufactured and distributed by the applicant, for example, in differential pressure transmitters under the name "Deltabar” and in pressure transmitters, which have a hydraulic pressure transmitter, under the name "Cerabar”.
  • the membrane body and the substrate body in particular have monocrystalline silicon as the basis for material, wherein the mounting surfaces to be joined together have normal, which are each given by the same main crystal axis, for example, a ⁇ 100> axis.
  • the substrate body and the membrane body are joined together by a eutectic compound containing an intermediate layer of gold necessary to form the eutectic.
  • the described procedure and the generic pressure sensors provide satisfactory measurement results, there are, nevertheless, effects between the substrate body and the membrane body, which can occur due to the anisotropy of the mechanical and electrical material parameters.
  • the Young's modulus of silicon is 130 GPa in the 100 direction, 169 GPa in the ⁇ 1 10> direction, and 188 GPa in the ⁇ 1 1 1> direction.
  • the pressure sensor according to the invention for example a semiconductor pressure sensor, comprises a monocrystalline membrane body which has a measuring diaphragm and an edge region surrounding the measuring diaphragm, wherein the
  • Edge region has a greater material thickness than the measuring diaphragm, and wherein the edge region has a first mounting surface, the surfaces of which is given normally by a first main crystal axis; and a monocrystalline substrate body having the same semiconductor material as the membrane body with respect to the crystal structure, the substrate body having a second mounting surface whose surface normal is parallel to the first main crystal axis, the membrane body being fixedly connected to the substrate body by joining the first mounting surface to the second mounting surface is, according to the invention, the orientations of other main crystal axes of membrane body and substrate body are each aligned parallel to each other.
  • the membrane body and the substrate body Si, SiC or sapphire.
  • the first main crystal axis is, for example for a Si, a ⁇ 100> or a ⁇ 11> axis.
  • first mounting surface and the second mounting surface are joined by means of a eutectic connection.
  • first mounting surface and the second mounting surface are joined by fusion bonding (English: fusion bonding), wherein the first mounting surface and the second mounting surface are joined in particular in the wafer assembly prior to the separation of the sensors (English: full wafer bonding).
  • the pressure sensor according to the invention comprises, according to one embodiment of the invention, a transducer for converting a pressure-dependent deformation of the measuring diaphragm into an electrical signal, wherein the transducer may in particular be a (piezo) resistive or a capacitive transducer.
  • the pressure sensor according to the invention may be an absolute pressure sensor, a relative pressure sensor or a differential pressure sensor, wherein an absolute pressure sensor measures a media pressure against vacuum, a relative pressure sensor measures a media pressure against atmospheric pressure, and a differential pressure sensor measures the difference between a first media pressure and a second media pressure.
  • Substrate body and membrane body is significantly reduced, and that on the other hand, the anisotropic material properties in the vicinity of the mounting surfaces no longer lead to the entry of inhomogeneous tension. As a result, the long-term stability and the measurement accuracy can be improved as a result.
  • a pressure sensor according to the invention comprises a pressure sensor according to the invention and a housing which has in its interior a sensor chamber in which the pressure sensor is arranged, and at least one hydraulic path extending from an outer surface of the housing into the sensor chamber around a surface of the Apply measuring membrane with a pressure to be measured.
  • an opening of the hydraulic path in the outer surface of the housing is covered with a separation membrane which is pressure-tightly connected to the outer surface of the housing along an edge, and wherein the volume of the hydraulic path enclosed between the separation membrane and the measurement membrane is filled with a transmission medium, such as a non-compressible liquid.
  • Fig. 1 a representation of the main crystal planes of a silicon crystal
  • FIG. 2 shows a perspective sectional view of a membrane body according to the invention and of a device according to the invention
  • Figure 1 shows the main crystal planes ⁇ 100 ⁇ , ⁇ 1 10 ⁇ and ⁇ 11 1 ⁇ of a silicon crystal and their orientation to each other.
  • a membrane body 1 comprises monocrystalline silicon. It has a measuring membrane 3, which runs in a ⁇ 100 ⁇ plane.
  • the measuring membrane is prepared by an etching process in a silicon crystal, ⁇ 1 1 1 ⁇ planes being formed by the etching process, which delimit an edge region 5 of the membrane body towards the measuring membrane 3.
  • Perpendicular to the surface of the measuring diaphragm 3 and perpendicular to the Mounting surfaces run, each perpendicular to each other, ⁇ 1 10 ⁇ planes, which limit the membrane body laterally.
  • the membrane body 1 is to be joined to a substrate body 10 which has a ⁇ 100 ⁇ plane 12 and, in parallel, a ⁇ 100 ⁇ plane 14, the latter serving as a second mounting surface.
  • the substrate body is also bounded laterally by ⁇ 110 ⁇ planes.
  • the membrane body 1 and the substrate body 10 are oriented in such a way to each other, that the first mounting surface is applied to the second mounting surface, and that the ⁇ 1 10 ⁇ - planes of the membrane body 1 and substrate body 10 each parallel to each other.
  • the membrane body 1 and the substrate body 10 are joined together by fusion bonding, and this is especially done in the wafer assembly before the pressure sensors are singulated by sawing the wafers along the ⁇ 1 10 ⁇ planes.
  • the wafers have corresponding orientation marks, which allow the described alignment of membrane body and substrate body to each other.
  • FIG. 3 shows a pressure measuring transducer according to the invention, in which a pressure sensor according to the invention, consisting of a membrane body 1 and a substrate body 10, which are joined together along the first mounting surface 7 and the second mounting surface 14, is arranged in a sensor housing 22 in a metal housing 20.
  • the pressure transducer shown is a Relativ umansauf choir, in which a measuring diaphragm 3 of the Hableitertiksensors via a capillary 24, which extends to a surface of the housing 20, acted upon by a pressure acting on a separation membrane 26 media pressure.
  • the measuring membrane 26 is connected to the surface of the housing 20 with a circumferential weld, the free volume of the sensor chamber 22 and the volume enclosed under the separation membrane being mixed with a transfer medium, e.g. a non-compressible liquid is filled.
  • a transfer medium e.g. a non-compressible liquid
  • the substrate body is fixed in the sensor chamber 22 on the back by means of a pressure-bearing joint, for example a bond 30, through which the channel 28 extends.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne un capteur de pression comprenant un corps membrane (1) monocristallin, qui présente une membrane de mesure (3), et une zone de bordure (5) entourant la membrane de mesure, ladite zone de bordure présentant une épaisseur plus importante que celle de la membrane de mesure (3) et présentant une première surface de montage (7), dont la normale est constituée par un premier axe cristallin principal; et un corps de support (10) monocristallin qui, en ce qui concerne sa structure cristalline, présente le même matériel semiconducteur que le corps de membrane (1), ledit corps de support (10) présentant une deuxième surface de montage (14) dont la normale est parallèle au premier axe cristallin principal, et ledit corps de membrane étant fixé au corps de support par assemblage de la première surface de montage avec la deuxième surface de montage. Le capteur de pression selon l'invention est caractérisé en ce que les autres axes cristallins principaux, respectivement du corps de membrane et du corps de support, sont d'orientations parallèles.
EP10711204A 2009-03-26 2010-03-24 Capteur de pression Ceased EP2411781A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009001892A DE102009001892A1 (de) 2009-03-26 2009-03-26 Drucksensor
PCT/EP2010/053825 WO2010108949A1 (fr) 2009-03-26 2010-03-24 Capteur de pression

Publications (1)

Publication Number Publication Date
EP2411781A1 true EP2411781A1 (fr) 2012-02-01

Family

ID=42288982

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10711204A Ceased EP2411781A1 (fr) 2009-03-26 2010-03-24 Capteur de pression

Country Status (4)

Country Link
US (1) US8794077B2 (fr)
EP (1) EP2411781A1 (fr)
DE (1) DE102009001892A1 (fr)
WO (1) WO2010108949A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009001133A1 (de) * 2009-02-25 2010-08-26 Endress + Hauser Gmbh + Co. Kg Drucksensor mit Halbleiterdruckmesswandler
JP5630088B2 (ja) * 2010-06-16 2014-11-26 ミツミ電機株式会社 ピエゾ抵抗式圧力センサ
DE102011006517A1 (de) 2011-03-31 2012-10-04 Endress + Hauser Gmbh + Co. Kg Druckfest gekapselter Differenzdrucksensor
DE102011088303A1 (de) * 2011-12-12 2013-06-13 Endress + Hauser Gmbh + Co. Kg Tubusflanschdruckmittler, Druckmessanordnung mit einem solchen Tubusflanschdruckmittler und Druckmessstelle mit einer solchen Druckmessanordnung
US10390333B2 (en) * 2013-05-02 2019-08-20 Huawei Technologies Co., Ltd. System and method for transmission source identification
DE102016115197A1 (de) * 2016-08-16 2018-02-22 Endress + Hauser Gmbh + Co. Kg Füllkörper zur Reduktion eines Volumens einer Druckmesskammer
CN209326840U (zh) 2018-12-27 2019-08-30 热敏碟公司 压力传感器及压力变送器
US11378480B2 (en) * 2020-09-21 2022-07-05 Rosemount Inc. Polysilicon on sapphire oil-less pressure sensor
KR102687205B1 (ko) * 2022-08-26 2024-07-22 (주)에이치에스씨엠티 고온 배관용 압력계

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0400939A2 (fr) * 1989-05-30 1990-12-05 Solartron Group Limited Capteur semi-conducteur à élément vibrant
JPH0329829A (ja) * 1989-06-27 1991-02-07 Fuji Electric Co Ltd 半導体圧力変換器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1698121C3 (de) * 1968-03-05 1975-12-11 Conrac Corp., New York, N.Y. (V.St.A.) Piezoelektrischer Druckmesser
DD254271B1 (de) 1986-12-03 1993-03-04 Teltov Geraete Regler Verfahren zum verbinden von fuegeteilen aus gleichem material
US4945769A (en) * 1989-03-06 1990-08-07 Delco Electronics Corporation Semiconductive structure useful as a pressure sensor
US4993143A (en) * 1989-03-06 1991-02-19 Delco Electronics Corporation Method of making a semiconductive structure useful as a pressure sensor
US5289721A (en) * 1990-09-10 1994-03-01 Nippondenso Co., Ltd. Semiconductor pressure sensor
JP2000121469A (ja) * 1998-10-16 2000-04-28 Mitsubishi Electric Corp 圧力センサ
DE10231727A1 (de) * 2002-07-13 2004-01-22 Robert Bosch Gmbh Mikromechanische Drucksensorvorrichtung und entsprechende Messanordnung
DE602005027072D1 (de) * 2005-09-16 2011-05-05 St Microelectronics Srl Druckwandler mit akoustischen Oberflächenwellen
JP4916006B2 (ja) * 2007-02-28 2012-04-11 株式会社山武 圧力センサ
DE102007053859A1 (de) * 2007-11-09 2009-05-14 Endress + Hauser Gmbh + Co. Kg Druck-Messeinrichtung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0400939A2 (fr) * 1989-05-30 1990-12-05 Solartron Group Limited Capteur semi-conducteur à élément vibrant
JPH0329829A (ja) * 1989-06-27 1991-02-07 Fuji Electric Co Ltd 半導体圧力変換器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2010108949A1 *

Also Published As

Publication number Publication date
WO2010108949A1 (fr) 2010-09-30
US20120017690A1 (en) 2012-01-26
US8794077B2 (en) 2014-08-05
DE102009001892A1 (de) 2010-09-30

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