EP2404323A2 - Rear contact solar cells, and method for the production thereof - Google Patents
Rear contact solar cells, and method for the production thereofInfo
- Publication number
- EP2404323A2 EP2404323A2 EP10705559A EP10705559A EP2404323A2 EP 2404323 A2 EP2404323 A2 EP 2404323A2 EP 10705559 A EP10705559 A EP 10705559A EP 10705559 A EP10705559 A EP 10705559A EP 2404323 A2 EP2404323 A2 EP 2404323A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- wafer
- laser
- liquid jet
- metal
- seed layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 239000007788 liquid Substances 0.000 claims description 36
- 235000012431 wafers Nutrition 0.000 claims description 34
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 238000001465 metallisation Methods 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 4
- 239000004327 boric acid Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 230000009467 reduction Effects 0.000 claims description 4
- 239000000243 solution Substances 0.000 claims description 4
- 230000008719 thickening Effects 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 2
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 229910021538 borax Inorganic materials 0.000 claims description 2
- 235000010338 boric acid Nutrition 0.000 claims description 2
- 150000001639 boron compounds Chemical class 0.000 claims description 2
- 150000001642 boronic acid derivatives Chemical class 0.000 claims description 2
- 150000001805 chlorine compounds Chemical class 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 238000004070 electrodeposition Methods 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 150000002259 gallium compounds Chemical class 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 238000005224 laser annealing Methods 0.000 claims description 2
- 235000021317 phosphate Nutrition 0.000 claims description 2
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims description 2
- 239000004328 sodium tetraborate Substances 0.000 claims description 2
- 235000010339 sodium tetraborate Nutrition 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 230000002123 temporal effect Effects 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 41
- 238000002161 passivation Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 229960004838 phosphoric acid Drugs 0.000 description 7
- 235000011007 phosphoric acid Nutrition 0.000 description 7
- 239000002344 surface layer Substances 0.000 description 6
- 239000005360 phosphosilicate glass Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002585 base Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000000443 aerosol Substances 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ion Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 1
- 229940098221 silver cyanide Drugs 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to a method for the production of back-contacting solar cells which is based on a microstructuring of a wafer provided with a dielectric layer and a doping of the microstructured regions on the back side as well as an emitter diffusion on the back side. This is followed by the deposition of a metal-containing seed layer and a galvanic reinforcement of the contacts on the back. Likewise, the invention relates to such producible solar cells.
- both the emitter and the base of the cell are contacted via the backside of the cell.
- This cell type has no front-side contacts. In this way, the deductions reduces shading losses caused by front-side contacts on standard cells.
- a passivation layer is deposited on the substrate, which is typically an n-doped material, eg by means of a high-temperature step in a tube furnace, as in the case of SiO 2 as a passivation layer or in a CVD process, such as for silicon nitride SiN x .
- an etching mask is applied to the passivation layer, either by the screen printing or the ink jet printing method.
- the etching mask contains at those locations windows at which a selective doping of the silicon is to take place later on the substrate.
- the etching mask is removed by means of suitable solvents.
- the surface is sprayed over the entire surface with boron tribromide BBr 3 .
- BBr 3 boron tribromide
- the etching mask is removed by means of suitable solvents.
- the surface is sprayed over the entire surface with boron tribromide BBr 3 .
- BBr 3 boron tribromide
- it decomposes in the presence of residual moisture to form hydrogen bromide HBr and boric acid B (OH) 3 , with the latter compound with the bare silicon forming a firmly adhering borosilicate glass. From this diffuse further heating at temperatures of about 1000 0 C and more boron atoms in the silicon substrate and form there a highly p-doped region (p + ).
- the highly doped regions later serve as contact points for the metal contacts, preventing the harmful inward diffusion of the metal into the semiconductor, but at the same time reducing the contact resistance.
- the RSK cell also has the second type of contact on the back. These metal contacts also require highly doped regions at the points of contact with the silicon substrate, but this time with an n + doping that is caused by phosphorus atoms.
- both highly doped regions are created on the back, the cell is contacted.
- a metal usually aluminum, vapor-deposited. Both poles of the cell are separated by selective etching of the areas between the contact fingers with the aid of etching masks.
- the production of solar cells involves a large number of process steps for the precision machining of wafers. These include u.a. the emitter diffusion, the deposition of a dielectric layer and its microstructuring, the doping of the wafer, the contacting, the application of a seed layer and their thickening.
- a previously known gentle possibility of locally opening the passivation layer is the use of photolithography combined with wet-chemical etching processes.
- a photoresist layer is first applied to the wafer and this patterned via UV exposure and developing.
- This is followed by a wet-chemical etching step in a hydrofluoric acid-containing or phosphoric-acid-containing chemical system, which removes the SiN x at the locations where the photoresist was opened.
- a big disadvantage of this method is the enormous effort and the associated costs.
- this process can not achieve sufficient throughput for solar cell production. For some nitrides, moreover, the method described here can not be used since the etching rates are too low.
- a local doping can also be done by screen printing a self-doping (eg aluminum-containing) metal paste with subsequent drying and firing at temperatures around 900 0 C.
- a self-doping eg aluminum-containing
- the disadvantage of this method is the high mechanical stress of the component, the expensive consumables and the high temperatures to which the entire component is exposed. Furthermore, only structural widths> 100 ⁇ m are possible hereby.
- buried base contacts uses a SiN x layer over its entire area, opening it locally with laser radiation and then diffusing the doping layer in the diffusion furnace protected by the passivation layer, forming a highly doped zone only in the laser-opened areas After the etching back of the resulting phosphosilicate glass (PSG), metallization is effected by electroless deposition in a metal-containing liquid, a disadvantage of this method being the damage introduced by the laser and the necessary etching step to remove the PSG Individual steps that require many handling steps.
- PSG phosphosilicate glass
- a method for the production of back contacted solar cells in which a) at least the backside of a wafer is at least partially coated with at least one dielectric layer,
- a metal-containing seed layer is deposited at least in regions on the backside of the wafer, and
- the microstructuring be accomplished by treating the surface with a dry laser or a water jet guided laser or an etchant containing liquid jet guided laser.
- a liquid jet-guided laser containing an etchant takes place in such a way that a liquid jet directed onto the surface of the wafer and containing at least one etchant for the wafer is transferred to structuring areas of the surface is performed, wherein the surface is previously or simultaneously heated by a laser beam locally.
- an agent which has a more corrosive effect on the at least one dielectric layer than on the substrate is preferably selected as etchant.
- the etchants are particularly preferably selected from the group consisting of H 3 PO 4 , H 3 PO 3 , PCl 3 , PCl 5 , POCl 3 , KOH, HF / HNO 3 , HCl, chlorine compounds, sulfuric acid and mixtures thereof.
- the liquid jet may particularly preferably be formed from pure or highly concentrated phosphoric acid or else dilute phosphoric acid.
- Phosphoric acid can e.g. diluted in water or other suitable solvent and used in different concentrations. Also, additives for changing pH (acids or alkalies), wetting behavior (e.g., surfactants), or viscosity (e.g., alcohols) may be added. Particularly good results are achieved when using a liquid containing phosphoric acid in a proportion of 50 to 85% by weight. In particular, rapid processing of the surface layer can be achieved without damaging the substrate and surrounding areas.
- the microstructuring according to the invention achieves two things with very little effort.
- the surface layer in the said areas can be completely removed without damaging the substrate, because the liquid has a less (preferably no) corrosive effect on the latter.
- the local heating of the surface layer in the areas to be removed, whereby preferably only these areas are heated, allows a well-localized, limited to these areas Abtra- surface layer. This results from the fact that the corrosive action of the liquid typically increases with increasing temperature, so that damage to the surface layer in adjacent, unheated areas is largely avoided by possibly reaching there parts of the etching liquid.
- the dielectric layer deposited on the wafer serves for passivation and / or as an antireflection layer.
- the dielectric layer is preferably selected from the group consisting of SiN x , SiO 2 , SiO x , MgF 2 , TiO 2 , SiC x and Al 2 O 3 .
- the emitter diffusion and the doping in step c) are preferably carried out with a liquid jet containing H 3 PO 4 , H 3 PO 3 and / or POCl 3 into which a laser beam is coupled.
- the dopant is preferably selected from the group consisting of phosphorus, boron, indium, gallium and mixtures thereof, in particular phosphoric acid, phosphorous acid, solutions of phosphates and hydrogen phosphates, borax, boric acid, borates and perborates, boron compounds, gallium compounds and mixtures thereof.
- a further preferred variant provides that the microstructuring, the emitter diffusion and the Boron doping can be carried out simultaneously with a nierkeitsstrahlge- led laser.
- a further variant according to the invention comprises that in precision machining following the
- a liquid containing at least one compound which etches the solid material is particularly preferred, since in the same device first the microstructuring and then by the exchange of the liquids, the doping can be carried out.
- the microstructuring can also be carried out by means of an aerosol jet, wherein laser radiation is not necessarily required in this variant, since comparable results can be achieved by preheating the aerosol or its components.
- the inventive method uses, preferably for microstructuring and doping as well as the emitter diffusion, a technical system in which a liquid jet, which can be equipped with different chemical saliency systems, as a liquid
- Light guide for a laser beam is used.
- the laser beam is coupled into the liquid jet via a special coupling device and guided by total internal reflection. In this way, a time and place same supply of chemicals and laser beam to the process stove is guaranteed.
- the laser licht performs various tasks: On the one hand, it is able to locally heat it up at the point of impact on the substrate surface, optionally melting it and, in extreme cases, evaporating it.
- the simultaneous impact of chemicals on the heated substrate surface can activate chemical processes that do not occur under standard conditions because they are kinetically inhibited or thermodynamically unfavorable.
- the thermal effect of the laser light and a photochemical activation is possible, to the effect that the laser light generated on the surface of the substrate, for example, electron-hole pairs that promote the process of redox reactions in this area or even make it possible.
- the liquid jet In addition to the focusing of the laser beam and the supply of chemicals, the liquid jet also ensures cooling of the marginal areas of the process hearth and rapid removal of the reaction products.
- the latter aspect is an important prerequisite for promoting and accelerating rapid chemical (equilibrium) processes.
- the cooling of the marginal areas, which are not involved in the reaction and especially not subject to material removal, can be protected by the cooling effect of the beam from thermal stresses and resulting crystalline damage, which allows a low-damage or damage-free structuring of the solar cells.
- the liquid jet due to its high flow rate, the liquid jet imparts a considerable mechanical impulse to the substances supplied, which becomes particularly effective when the jet strikes a molten substrate surface.
- the laser beam and the liquid jet together form a new process tool, which in its combination is superior in principle to the individual systems that make it up.
- the metal-containing seed layer is preferably deposited by vapor deposition, sputtering or by reduction from aqueous solution.
- the metal-containing seed layer preferably contains a metal from the group aluminum, nickel, titanium, chromium, tungsten, silver and their alloys.
- the seed layer After application of the seed layer, it is preferably thermally treated, e.g. by laser annealing.
- metal-containing seed layer After application of the metal-containing seed layer is preferably carried out at least partially thickening of the seed layer by electrodeposition of a metallization, in particular of silver or
- a liquid jet which is as laminar as possible is used to carry out the process.
- the laser beam can then be guided in a particularly effective manner by total reflection in the liquid jet, so that the latter fulfills the function of a light guide.
- the coupling of the laser beam can be done for example by a perpendicular to a beam direction of the liquid jet window in a nozzle unit.
- the window can also be designed as a lens for focusing the laser beam. Alternatively or additionally, a lens independent of the window can also be used to focus or shape the laser beam.
- the nozzle unit can be designed in a particularly simple embodiment of the invention so that the liquid is supplied from one side or from several sides in the jet direction radial direction.
- Preferred laser types are:
- solid-state lasers in particular the commercially frequently used Nd-YAG lasers of wavelength 1064 nm, 532 nm, 355 nm, 266 nm and 213 nm, diode lasers with wavelengths ⁇ 1000 nm, argon ion lasers of wavelength 514 to 458 nm and excimer lasers (wavelengths: 157 to 351 nm).
- the quality of the microstructuring tends to increase with decreasing wavelength because increasingly the energy induced by the laser in the surface layer is increasingly concentrated at the surface, which tends to reduce the heat affected zone and thus reduce the crystalline damage in the material. especially in phosphorus doped silicon below the passivation layer leads.
- blue lasers and lasers in the near UV range (for example 355 nm) with pulse lengths in the femtosecond to nanosecond range are particularly effective.
- shortwave laser light in particular there is the
- a direct generation of electron / hole pairs in silicon which can be used for the electrochemical process in nickel deposition (photochemical activation).
- free electrons generated in the silicon by laser light can be used in addition to those already described above.
- described redox process of nickel ions with phosphorous acid directly contribute to the reduction of nickel on the surface.
- This electron / hole generation can be permanently maintained by permanent illumination of the sample with defined wavelengths (especially in the near UV with ⁇ 355 nm) during the structuring process and sustainably promote the metal nucleation process.
- the solar cell property can be exploited in order to separate the superconducting charge carriers via the p-n junction and thus negatively charge the n-conducting surface.
- a further preferred variant of the method according to the invention provides that the laser beam is actively set in temporal and / or spatial pulse shape. These include the flattop shape, an M-profile or a rectangular pulse.
- the invention likewise provides a solar cell which can be produced by the method described above.
- Fig. 1 shows an embodiment of the solar cell according to the invention.
- the solar cell 1 according to the invention in FIG. 1 has an n-silicon-based wafer 2, which is coated on the rear side with an electric field (n + Back Surfaces Field) 3. On this layer is a passivation layer 4 is arranged. In defined areas on the back side of the wafer, p ++ emitters 5, 5 'and 5 "and p-metal fingers 6, 6' and 6" are arranged. To this end, areas are arranged which have electrical fields on the rear side (n ++ back surface fields) 7, 7 ', 7 "and n-metal fingers 8, 8', 8". On the front side of the wafer 2, an n + front surface field 9 and a passivation layer 10 is arranged.
- a wire sawn wafer having an n-type basic doping tion is first subjected to a damage etch to remove the Drahtsäge antibiotics, said loss ratios in 40% KOH is carried out at 80 C for 20 minutes 0th There follows a one-sided texturing tion of the wafer in 1% KOH at 98 0 C (duration about 35 minutes).
- a front surface field (FSF) is deposited on the front of the wafer and a back surface field (BSF) on the back of the wafer.
- FSF front surface field
- BSF back surface field
- These steps are carried out simultaneously by phosphorus diffusion in the tube furnace using POCl 3 as the phosphorus source.
- the sheet resistance of this lightly doped layer is in a range of 100 to 400 ohms / sq.
- a thin thermal oxide layer is produced in the tube furnace. The thickness of the oxide layer is in this case in a range of 6 to 15 nm.
- a damage etch to remove the Dra
- the wafer treated in this way is subsequently structured with the liquid jet on the back.
- the formation of the selective back surface fields (BSF) takes place with the help of a laser, which is coupled into a liquid jet (so-called laser chemical proces- ses, LCP).
- Strahltnedium 85% phosphoric acid is used.
- the line width of the structures is about 30 ⁇ m and the distance between the structures is 1 to 3 mm.
- the driving speed is 400 mm / s.
- the line width is about 30 microns and the distance between two contact fingers 1 to 3 mm. Again, laser parameters and speed are identical to the previous two steps.
- the layer resistance here is between 10 and 60 ohms / sq.
- an electroless deposition takes place on the emitter and on the back surface field to form a seed layer.
- a metallization solution which contains NaPH 2 O 2 , NiCl 2 , a stabilizer, a complexing agent for Ni 2+ ions, such as citric acid.
- the bath temperature is 90 0 C. After sintering of the all back contacts takes place at temperatures of 300 to 500 0 C in a
- Forming gas atmosphere N 2 H 2 .
- the bath temperature is 25 0 C, the applied voltage at the back of the wafer 0.3 V.
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Abstract
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102009011305A DE102009011305A1 (en) | 2009-03-02 | 2009-03-02 | Back contacting solar cells and methods of making same |
PCT/EP2010/001152 WO2010099892A2 (en) | 2009-03-02 | 2010-02-22 | Rear contact solar cells, and method for the production thereof |
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EP2404323A2 true EP2404323A2 (en) | 2012-01-11 |
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EP10705559A Withdrawn EP2404323A2 (en) | 2009-03-02 | 2010-02-24 | Rear contact solar cells, and method for the production thereof |
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US (1) | US20120138138A1 (en) |
EP (1) | EP2404323A2 (en) |
KR (1) | KR20110137299A (en) |
CN (1) | CN102341921A (en) |
DE (1) | DE102009011305A1 (en) |
WO (1) | WO2010099892A2 (en) |
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CN102201493A (en) * | 2011-04-02 | 2011-09-28 | 周明 | High-speed precision crystal silicon laser etching apparatus and method |
US9559228B2 (en) * | 2011-09-30 | 2017-01-31 | Sunpower Corporation | Solar cell with doped groove regions separated by ridges |
CN102437242B (en) * | 2011-12-05 | 2014-06-25 | 天威新能源控股有限公司 | Method for opening passivation layer on back surface of solar cell |
CN102842646A (en) * | 2012-05-30 | 2012-12-26 | 浙江晶科能源有限公司 | Preparation method of interdigitated back-contact battery based on N-type substrate |
DE102012214011A1 (en) * | 2012-07-23 | 2014-05-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for layer and regioselective removal of metal-containing solid layer from solid layer e.g. film, in mold body for semiconductor substrate for solar cell, involves stripping metal-containing layer by mechanical effect of fluid jet |
US9379258B2 (en) | 2012-11-05 | 2016-06-28 | Solexel, Inc. | Fabrication methods for monolithically isled back contact back junction solar cells |
WO2014137283A1 (en) * | 2013-03-05 | 2014-09-12 | Trina Solar Energy Development Pte Ltd | Method of fabricating a solar cell |
CN103367539B (en) * | 2013-06-26 | 2015-09-09 | 英利集团有限公司 | The manufacture method of IBC solar cell and IBC solar cell |
KR101424538B1 (en) * | 2013-06-28 | 2014-08-04 | 주식회사 엔씨디 | The method for manufacturing the back contact type solar cell |
US9653638B2 (en) | 2013-12-20 | 2017-05-16 | Sunpower Corporation | Contacts for solar cells formed by directing a laser beam with a particular shape on a metal foil over a dielectric region |
CN103956410A (en) * | 2014-05-09 | 2014-07-30 | 苏州阿特斯阳光电力科技有限公司 | Manufacturing method of N-type back junction solar battery |
DE102014109179B4 (en) * | 2014-07-01 | 2023-09-14 | Universität Konstanz | Method for producing differently doped areas in a silicon substrate, in particular for a solar cell, and solar cell with these differently doped areas |
DE102015213473A1 (en) * | 2015-07-17 | 2017-01-19 | Robert Bosch Gmbh | Production method for a micromechanical window structure and corresponding micromechanical window structure |
CN209389043U (en) * | 2018-11-27 | 2019-09-13 | 晶澳(扬州)太阳能科技有限公司 | Crystal silicon solar energy battery and photovoltaic module |
CN113948611B (en) * | 2021-10-15 | 2023-12-01 | 浙江爱旭太阳能科技有限公司 | P-type IBC battery, preparation method thereof, assembly and photovoltaic system |
CN117374158B (en) * | 2023-10-17 | 2024-05-31 | 扬州大学 | Preparation method of BC structure solar cell based on photoinduced doping |
Family Cites Families (10)
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US5538564A (en) * | 1994-03-18 | 1996-07-23 | Regents Of The University Of California | Three dimensional amorphous silicon/microcrystalline silicon solar cells |
CA2330426C (en) * | 1998-04-30 | 2007-11-13 | Synova S.A. | Material shaping device with a laser beam which is injected into a stream of liquid |
DE10150040A1 (en) * | 2001-10-10 | 2003-04-17 | Merck Patent Gmbh | Etching passivating and antireflection layers made from silicon nitride on solar cells comprises applying a phosphoric acid and/or etching medium containing a salt of phosphoric acid the surface regions to be etched |
US6998288B1 (en) * | 2003-10-03 | 2006-02-14 | Sunpower Corporation | Use of doped silicon dioxide in the fabrication of solar cells |
EP1657020A1 (en) * | 2004-11-10 | 2006-05-17 | Synova S.A. | Process and device for optimising the coherence of a fluidjet used for materialworking and fluid flow nozzle for such a device |
DE102006003604A1 (en) * | 2005-03-16 | 2006-11-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Process for microstructuring solid surfaces |
WO2007085452A1 (en) * | 2006-01-25 | 2007-08-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Process and device for the precision-processing of substrates by means of a laser coupled into a liquid stream, and use of same |
DE102006042617B4 (en) * | 2006-09-05 | 2010-04-08 | Q-Cells Se | Method for generating local contacts |
DE102007010872A1 (en) * | 2007-03-06 | 2008-09-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Process for the precision machining of substrates and their use |
WO2008137174A1 (en) * | 2007-05-07 | 2008-11-13 | Georgia Tech Research Corporation | Formation of high quality back contact with screen-printed local back surface field |
-
2009
- 2009-03-02 DE DE102009011305A patent/DE102009011305A1/en not_active Ceased
-
2010
- 2010-02-22 WO PCT/EP2010/001152 patent/WO2010099892A2/en active Application Filing
- 2010-02-22 KR KR1020117020402A patent/KR20110137299A/en not_active Application Discontinuation
- 2010-02-22 US US13/254,181 patent/US20120138138A1/en not_active Abandoned
- 2010-02-22 CN CN2010800100885A patent/CN102341921A/en active Pending
- 2010-02-24 EP EP10705559A patent/EP2404323A2/en not_active Withdrawn
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WO2010099892A2 (en) | 2010-09-10 |
WO2010099892A3 (en) | 2010-12-02 |
CN102341921A (en) | 2012-02-01 |
DE102009011305A1 (en) | 2010-09-09 |
KR20110137299A (en) | 2011-12-22 |
US20120138138A1 (en) | 2012-06-07 |
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