EP2379272A2 - Verfahren und vorrichtung zur simultanen mikrostrukturierung und passivierung - Google Patents
Verfahren und vorrichtung zur simultanen mikrostrukturierung und passivierungInfo
- Publication number
- EP2379272A2 EP2379272A2 EP09801176A EP09801176A EP2379272A2 EP 2379272 A2 EP2379272 A2 EP 2379272A2 EP 09801176 A EP09801176 A EP 09801176A EP 09801176 A EP09801176 A EP 09801176A EP 2379272 A2 EP2379272 A2 EP 2379272A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- laser beam
- precursor
- liquid jet
- solid
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000007787 solid Substances 0.000 claims abstract description 33
- 239000002243 precursor Substances 0.000 claims abstract description 14
- 239000007788 liquid Substances 0.000 claims description 39
- 238000002161 passivation Methods 0.000 claims description 23
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 8
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 4
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 4
- -1 also in diluted form Chemical class 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 235000019253 formic acid Nutrition 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- CAMXVZOXBADHNJ-UHFFFAOYSA-N ammonium nitrite Chemical compound [NH4+].[O-]N=O CAMXVZOXBADHNJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 2
- VFMMPHCGEFXGIP-UHFFFAOYSA-N 7,8-Benzoflavone Chemical compound O1C2=C3C=CC=CC3=CC=C2C(=O)C=C1C1=CC=CC=C1 VFMMPHCGEFXGIP-UHFFFAOYSA-N 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical class ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- 235000019270 ammonium chloride Nutrition 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- 150000003863 ammonium salts Chemical group 0.000 claims description 2
- 239000003125 aqueous solvent Substances 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- 150000007522 mineralic acids Chemical class 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 150000007524 organic acids Chemical class 0.000 claims description 2
- 235000005985 organic acids Nutrition 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 239000007800 oxidant agent Substances 0.000 claims description 2
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- 229920006395 saturated elastomer Polymers 0.000 claims description 2
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 claims description 2
- 241001270131 Agaricus moelleri Species 0.000 claims 1
- 150000001447 alkali salts Chemical class 0.000 claims 1
- 239000012459 cleaning agent Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 230000002123 temporal effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 239000012530 fluid Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229950011087 perflunafene Drugs 0.000 description 1
- UWEYRJFJVCLAGH-IJWZVTFUSA-N perfluorodecalin Chemical compound FC1(F)C(F)(F)C(F)(F)C(F)(F)[C@@]2(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)[C@@]21F UWEYRJFJVCLAGH-IJWZVTFUSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/144—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor the fluid stream containing particles, e.g. powder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/146—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor the fluid stream containing a liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/225—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/25—Oxides by deposition from the liquid phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/28—Other inorganic materials
- C03C2217/281—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/28—Other inorganic materials
- C03C2217/282—Carbides, silicides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/112—Deposition methods from solutions or suspensions by spraying
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the invention relates to a method for the simultaneous microstructuring and passivation of silicon-containing solids by means of a liquid jet guided laser process.
- the laser beam localized heating of the solid surface, while in the liquid jet, a precursor for the passivation of the solid surface is included.
- the invention relates to a device for simultaneous microstructuring and passivation. The process is used in particular in the production of solar cells.
- a method for the simultaneous microstructuring and passivation of silicon-containing solids in which a liquid jet directed onto the solid surface and containing at least one precursor for the passivation of the solid surface is guided over the regions of the solid to be structured, wherein a laser beam enters the liquid jet is coupled, whereby the solid surface is locally heated by the laser beam and thereby at least partially structured and are saturated by the precursor formed by the structuring free surface bonds and so a passivation layer is formed on the structured areas of the solid surface.
- the inventive method is based on a liquid jet, in which a laser beam is coupled, wherein the laser beam in the liquid jet, which preferably has a diameter of ⁇ 100 microns, is guided. At the point of impact of the liquid jet on the solid surface, the laser beam likewise strikes and locally heats the solid. In this way, in this region of the solid surface, the temperatures necessary for the melting and e-vaporation of the solid can be generated.
- the carrier liquid in the liquid jet hits the molten one
- a crystal damage of the solid is avoided in the local microstructuring, as achieved by the use of short-pulse laser radiation, preferably with pulses ⁇ 15 ns, a rapid re-solidification of the surface melt and thus a movement of the melt is avoided by the liquid jet.
- the carrier liquid essentially contains the chemical elements hydrogen, oxygen, nitrogen or carbon
- their thermal decomposition on the hot solid surface can be used to saturate free surface bonds and to grow a passivation layer.
- the precursor is preferably selected from the group consisting of ammonium salts, in particular ammonium nitrite, ammonium nitrate, ammonium hydroxide or ammonium chloride, alkali metal salts of nitrous acid, N 2 O in an organic or aqueous solvent, especially in water, and mixtures hereof.
- ammonium salts in particular ammonium nitrite, ammonium nitrate, ammonium hydroxide or ammonium chloride, alkali metal salts of nitrous acid, N 2 O in an organic or aqueous solvent, especially in water, and mixtures hereof.
- the precursor is preferably selected from the group consisting of
- inorganic acids in particular nitric acid, hydrochloric acid or persulfuric acid, also in dilute form, organic acids, in particular peracetic acid, trichloroacetic acid or formic acid, BHF with oxidizing agent and mixtures thereof.
- the precursor is preferably selected from the group consisting of formic acid, glycol, glycerol, polyethylene glycol and mixtures thereof.
- the substrate is selected from the group consisting of silicon, glass, siliceous ceramics and their composite systems.
- liquid jet may preferably also comprise further additives, for example cleaning media, such as hydrochloric acid, for cleaning the structured areas.
- cleaning media such as hydrochloric acid
- a liquid jet that is as laminar as possible is used to carry out the method.
- the laser beam can then be guided in a particularly effective manner by total reflection in the liquid jet, so that the latter performs the function of a light guide.
- the coupling of the laser beam can e.g. by a window oriented perpendicular to a jet direction of the liquid jet in a nozzle unit.
- the window can also be designed as a lens for focusing the laser beam.
- a lens independent of the window can also be used for focusing or shaping the laser beam.
- the nozzle unit can be designed in a particularly simple embodiment of the invention so that the liquid is supplied from one side or from several sides in the jet direction radial direction.
- Preferred laser types are:
- solid-state lasers in particular the commercially frequently used Nd-YAG lasers of wavelength 1064 nm, 532 nm, 355 nm, 266 nm and 213 nm, diode lasers with wavelengths ⁇ 1000 nm, argon ion lasers of wavelength 514 to 458 nm and excimer lasers (wavelengths: 157 to 351 nm).
- the quality of the microstructuring tends to increase with decreasing wavelength because increasingly the energy induced by the laser in the surface layer is increasingly concentrated on the surface, which tends to reduce the heat-affected zone and thus to reduce it.
- the crystalline damage in the material, especially in the phosphorous-doped silicon below the passivation layer leads.
- blue lasers and lasers in the near UV range are particularly effective.
- the use of shortwave laser light in particular offers the option of a direct generation of electron / hole pairs in silicon, which can be used for the electrochemical process in nickel deposition (photochemical activation).
- free electrons generated in the silicon by laser light can directly contribute to the reduction of nickel on the surface.
- This electron / hole generation can be permanently maintained by permanent illumination of the sample with defined wavelengths (especially in the near UV with ⁇ 355 nm) during the structuring process and sustainably promote the metal nucleation process.
- the solar cell property can be exploited in order to separate the superconducting charge carriers via the p-n junction and thus negatively charge the n-conducting surface.
- the liquid jet has a
- sintering of the passivated regions of the solid state Surface is performed.
- sintering under forming gas is used in particular.
- the method according to the invention is suitable in particular for the structuring of silicon solar cells, and in particular for the edge isolation of solar cells.
- the surface can be locally melted or removed by a laser beam contained in the liquid jet acts on the surface.
- a suitable carrier liquid in the liquid jet a thin passivation layer can be produced on the surface. This passivation layer reduces the recombination activity on the one hand and an insulating one on the other hand
- the latter can e.g. be advantageous in the case of back contact cells or for subsequent metallization steps in the process chain.
- An apparatus for carrying out a method of the type described can be embodied such that it comprises a nozzle unit with a window for coupling a laser beam, a liquid feed and a nozzle opening, the nozzle unit being held by a guide device for controlled, preferably automated, guiding Nozzle unit over the surface layer to be structured.
- the device typically also includes a laser beam source with a light exit surface corresponding to the window, which may be provided, for example, by one end of a light guide.
- an apparatus for carrying out a method according to the invention can comprise a nozzle for generating the liquid jet and a laser light source. in which the nozzle and the laser light source are each held by a guide device or by a common guide device for guiding the nozzle and the laser light source over the same regions of the surface layer to be structured.
- Passivitations Mrs is used as a carrier liquid for the liquid jet, an aqueous solution with ammonium nitrite in a concentration of 3 mol / 1.
- the laser light source used is a 1064 nm Nd: YAG laser and a beam power of 76 watts.
- the travel speed of the substrate relative to the liquid jet is 100 mm / s.
- the beam diameter is 80 ⁇ m.
- a second embodiment of the front division of the emitter, followed by depositing a thin SiN x layer provides as a solvent for the nitrogen source perfluorodecalin.
- the nitrogen source used is nitrous oxide (N 2 O), which is dissolved in the liquid in a concentration of 0.1 mol / l.
- the laser light source is an Nd: YAG
- Laser of wavelength 1064 nm and the beam power of 76 watts The travel speed of the substrate relative to the liquid jet is 200 mm / s.
- the beam diameter is 80 ⁇ m.
- An exemplary embodiment for the front-side separation of the emitter with subsequent deposition of a thin SiO x layer provides as blasting medium a dilute aqueous solution of hydrochloric acid and hydrogen peroxide (H 2 O 2 ).
- the concentration of the hydrochloric acid is 0.01 mol / L, that of the hydrogen peroxide is 0.1 mol / L.
- the laser light source is a frequency doubled Nd: YAG laser with a wavelength of 532 nm and a beam power of 11 watts.
- the travel speed of the substrate relative to the liquid jet is 100 mm / s.
- the beam diameter is 60 ⁇ m.
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- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- Computer Hardware Design (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Development (AREA)
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- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009004902A DE102009004902B3 (de) | 2009-01-16 | 2009-01-16 | Verfahren zur simultanen Mikrostrukturierung und Passivierung |
PCT/EP2009/009309 WO2010081533A2 (de) | 2009-01-16 | 2009-12-29 | Verfahren und vorrichtung zur simultanen mikrostrukturierung und passivierung |
Publications (1)
Publication Number | Publication Date |
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EP2379272A2 true EP2379272A2 (de) | 2011-10-26 |
Family
ID=42096697
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP09801176A Withdrawn EP2379272A2 (de) | 2009-01-16 | 2009-12-29 | Verfahren und vorrichtung zur simultanen mikrostrukturierung und passivierung |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP2379272A2 (de) |
KR (1) | KR20110117155A (de) |
CN (1) | CN102281982A (de) |
DE (1) | DE102009004902B3 (de) |
WO (1) | WO2010081533A2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102013110421B4 (de) | 2013-09-20 | 2020-07-30 | Helmholtz-Zentrum Berlin für Materialien und Energie Gesellschaft mit beschränkter Haftung | Verwendung einer strukturierten a-SiNx-Schicht |
CN106670653A (zh) * | 2015-11-11 | 2017-05-17 | 恩耐公司 | 防锈不锈钢雕刻 |
CN112786734A (zh) * | 2019-11-08 | 2021-05-11 | 泰州隆基乐叶光伏科技有限公司 | 太阳能电池组件生产方法及太阳能电池组件 |
CN112687763B (zh) * | 2020-12-28 | 2022-12-09 | 天合光能股份有限公司 | 一种钝化接触晶体硅电池制备方法 |
CN115841969B (zh) * | 2022-12-12 | 2023-09-08 | 江苏宜兴德融科技有限公司 | 一种半导体器件激光钝化设备及钝化方法 |
Family Cites Families (6)
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DE19963824A1 (de) * | 1999-12-30 | 2001-07-19 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zum Bearbeiten von Halbleitermaterial |
DE10130349A1 (de) * | 2001-06-22 | 2003-01-02 | Konrad Seppelt | Verfahren zum lokalen laserinduzierten Ätzen von Feststoffen |
JP3866978B2 (ja) * | 2002-01-08 | 2007-01-10 | 富士通株式会社 | 半導体装置の製造方法 |
CN100480168C (zh) * | 2005-07-07 | 2009-04-22 | 上海交通大学 | 反应离子深刻蚀加工微结构的侧壁钝化方法 |
US20100213166A1 (en) * | 2006-01-25 | 2010-08-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Process and Device for The Precision-Processing Of Substrates by Means of a Laser Coupled Into a Liquid Stream, And Use of Same |
DE102006030588A1 (de) * | 2006-07-03 | 2008-01-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Flüssigkeitsstrahlgeführtes Ätzverfahren zum Materialabtrag an Festkörpern sowie dessen Verwendung |
-
2009
- 2009-01-16 DE DE102009004902A patent/DE102009004902B3/de not_active Expired - Fee Related
- 2009-12-29 WO PCT/EP2009/009309 patent/WO2010081533A2/de active Application Filing
- 2009-12-29 KR KR1020117018922A patent/KR20110117155A/ko not_active Application Discontinuation
- 2009-12-29 EP EP09801176A patent/EP2379272A2/de not_active Withdrawn
- 2009-12-29 CN CN2009801547342A patent/CN102281982A/zh active Pending
Non-Patent Citations (1)
Title |
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See references of WO2010081533A2 * |
Also Published As
Publication number | Publication date |
---|---|
WO2010081533A2 (de) | 2010-07-22 |
WO2010081533A3 (de) | 2010-09-30 |
CN102281982A (zh) | 2011-12-14 |
DE102009004902B3 (de) | 2010-05-12 |
KR20110117155A (ko) | 2011-10-26 |
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