EP2317533B1 - Kapazitiver Mikroschalter, der einen Ladungsablass aus Nanoröhren umfasst, die auf einer Steuerelektrode gerichtet sind, und Herstellungsverfahren - Google Patents

Kapazitiver Mikroschalter, der einen Ladungsablass aus Nanoröhren umfasst, die auf einer Steuerelektrode gerichtet sind, und Herstellungsverfahren Download PDF

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Publication number
EP2317533B1
EP2317533B1 EP10189620.7A EP10189620A EP2317533B1 EP 2317533 B1 EP2317533 B1 EP 2317533B1 EP 10189620 A EP10189620 A EP 10189620A EP 2317533 B1 EP2317533 B1 EP 2317533B1
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EP
European Patent Office
Prior art keywords
nanotubes
micro
electrode
membrane
switch
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EP10189620.7A
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English (en)
French (fr)
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EP2317533A1 (de
Inventor
Afshin Ziaei
Matthieu Le Baillif
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Thales SA
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Thales SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/12—Auxiliary devices for switching or interrupting by mechanical chopper
    • H01P1/127—Strip line switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H01H2059/0018—Special provisions for avoiding charge trapping, e.g. insulation layer between actuating electrodes being permanently polarised by charge trapping so that actuating or release voltage is altered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H2300/00—Orthogonal indexing scheme relating to electric switches, relays, selectors or emergency protective devices covered by H01H
    • H01H2300/036—Application nanoparticles, e.g. nanotubes, integrated in switch components, e.g. contacts, the switch itself being clearly of a different scale, e.g. greater than nanoscale

Definitions

  • the field of the invention is that of micro-systems components also called MEMS (acronym for Micro Electro Mechanical Systems) and more particularly microswitches radiofrequency or microwave integrating a deformable membrane under the action of an electrostatic field.
  • MEMS Micro Electro Mechanical Systems
  • the main application areas are telecommunications systems and radars.
  • Micro-system components have been developed for some decades from the technologies implemented for the realization of electronic circuits.
  • They generally comprise a membrane or a thin metal beam, held suspended by supports above conductive surfaces insulated from each other.
  • a control electrode placed under the conductive surfaces and optionally separated from said conductive surfaces by an insulating layer completes the device.
  • the membrane-control electrode assembly is subjected to an electrical voltage by means of the control electrode. In the absence of applied voltage, the membrane is suspended above the conductive surfaces and there is no electrical contact therebetween.
  • the microswitches MEMS radiofrequency or microwave in simple switch.
  • the direct contact between the membrane and the conductive surfaces or the control electrode significantly reduces the service life of the device.
  • a dielectric layer is interposed between the surfaces and the membrane. The simple function is thus transformed into a capacity variation of a capacitor whose armatures consist, on the one hand, of the membrane and, on the other hand, of the control electrode opposite each other. The capacity then varies from a C up value to a C down value.
  • the deformable upper membrane is made by depositing one or more layers of materials, at least one of these layers being a conductive material. These materials are those usually used in microelectronics.
  • the membrane 11 In the initial position, the membrane 11 is at a distance d with respect to an RF line 12, on which a nitride layer 13 is deposited as illustrated in FIG. figure 1 . Assuming that the RF line is also used as an electrode, both ends of the membrane are grounded as illustrated in FIG. figure 2 .
  • the signal passes in the RF line and is short-circuited by the membrane which creates a reflection of the EM wave (microwave signal) on the membrane, the signal does not cross the RF MEMS switch.
  • the actuation used for the RF MEMS switch of the figure 3 is an electrostatic actuation performed by applying a potential between the line (low electrode) and the membrane (high electrode).
  • Other actuations are conceivable such as thermal, piezoelectric, magnetostatic or hybrid actuations (using two or more of the four aforementioned actuations).
  • the type of contact between the membrane and the line is of the capacitive type on the RF MEMS switch of the figure 3 that is, a dielectric layer was deposited on the low electrode.
  • the line, the dielectric layer, the air gap and the membrane form a variable capacitance making it possible to let the microwave signal pass or block.
  • the second type of possible contact is the ohmic contact (metal-metal) between the membrane and the line.
  • the center line is covered with a dielectric at the level of the membrane to prevent there being an ohmic contact and therefore a charge circulation when the membrane is in the low state. This gives the advantage of little or no power consumption to keep the membrane low by using the center line as an actuating electrode.
  • the present invention proposes a new type of micro-switch comprising a drain of electrical charges inserted at the level of the dielectric layer covering the RF line.
  • the subject of the present invention is a condenser-type electrostatic actuator microswitch composed of two armatures, the first of which is a flexible membrane and the second comprises at least one control electrode, the two armatures being separated by a vacuum thickness. or gas and at least one layer of at least one electrical insulating material located on the control electrode characterized in that it further comprises a charge drain consisting of conducting nanotubes oriented on the surface of said electrode, said drain being covered by said layer of electrical insulating material.
  • the orientation of the nanotubes is perpendicular to the surface of said electrode.
  • the nanotubes are carbon nanotubes.
  • the electrical insulating material is a dielectric.
  • the dielectric material is of the Si 3 N 4 or ZrO 2 or PZT type.
  • the ratio of the height of the nanotubes to the thickness of the layer of electrical insulating material is close to 0.5.
  • the nanotubes are separated from each other by a distance greater than their height, so as to avoid electrical breakdown phenomena.
  • the growth of nanotubes oriented on the surface of the electrode comprises the growth of nanotubes oriented on the surface of the electrode by growth or catalytic decomposition of hydrocarbons from catalytic particles of the " CVD “for” Chemical Vapor Deposition “or” PECVD “for” Plasma Enhanced Chemical Vapor Deposition ".
  • FIG. figure 4 An example of a condenser-type electrostatic actuation microswitch according to the invention is illustrated in FIG. figure 4 .
  • RF signal line 42 on the surface of which is developed the drain based on oriented carbon nanotubes 43 and covered with a layer of dielectric material 44.
  • a metal membrane upper 45 rests on the surface of pillars 41.
  • the membrane may be composed of one or two metal layers that may be, for example, a gold layer (Au) or a two-layer aluminum (Al) structure and a titanium-tungsten alloy (TiW) structure. suspended between the two lines of mass.
  • Au gold layer
  • Al two-layer aluminum
  • TiW titanium-tungsten alloy
  • the dielectric layer may be a layer of dielectric material, for example ferromagnetic material that can typically be PZT: Pb (Zr x Ti 1-x ) O 3 .
  • the signal line is directly covered by the layer of dielectric material, the latter is subjected to electrical discharges when the membrane reaches its low state due to the high voltage required for actuation and the very small distance that results in the end when the membrane touches the dielectric. This causes a loading of the dielectric as it becomes critical when the accumulated charge is sufficient to permanently retain the membrane in the low state.
  • the invention proposes a solution consisting in producing capacitive RF MEMS switches whose dielectric layer consists of two elements: a vertical oriented carbon nanotube forest on which the normally used dielectric layer is deposited for the realization capacitive MEMS switch.
  • the mesh of nanotubes is transparent to the operation of the capacitive RF MEMS switch and therefore does not constitute a disruption to the performance of the latter.
  • the dielectric layer thus separated in two by an intermediate deposition of nano-structured compounds makes it possible to obtain a conductive middle layer allowing the supply or the evacuation of charge carriers inside the dielectric to avoid that the latter does not charge during the operation of the RF MEMS switch.
  • the figure 5 illustrates in more detail the assembly constituted by the drain of nanotubes and dielectric and schematized by arrows the mobility of the charges along the nanotubes.
  • the figure 6 illustrates in more detail, the nanotube growth operation at the surface of the RF line consisting of a metal line. It may advantageously be a conventional operation of growth in an electric field from catalytic elements 43c distributed relative to each other on the surface of the lower electrode 42, and put under a hydrocarbon plasma generate the growth of oriented nanotubes 43.

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  • Micromachines (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Contacts (AREA)
  • Push-Button Switches (AREA)

Claims (8)

  1. Mikroschalter mit elektrostatischer Betätigung vom Kondensatortyp, bestehend aus zwei Ankern, von denen der erste eine flexible Membran (45) ist und der zweite wenigstens eine Steuerelektrode (42) umfasst, wobei die beiden Anker durch eine Vakuum- oder Gasdicke und wenigstens eine Schicht aus wenigstens einem elektrisch isolierenden Material (44) getrennt sind, die sich auf der Steuerelektrode befindet, dadurch gekennzeichnet, dass er darüber hinaus eine Ladungssenke (43) umfasst, die von leitenden Nanoröhren gebildet wird, die auf der Oberfläche der Elektrode orientiert sind, wobei die Senke von der Schicht aus elektrisch isolierendem Material umhüllt ist.
  2. Mikroschalter mit elektrostatischer Betätigung nach Anspruch 1, dadurch gekennzeichnet, dass die Nanoröhren Kohlenstoffnanoröhren sind.
  3. Mikroschalter mit elektrostatischer Betätigung nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass das elektrisch isolierende Material ein dielektrisches Material ist.
  4. Mikroschalter mit elektrostatischer Betätigung nach Anspruch 3, dadurch gekennzeichnet, dass das dielektrische Material vom Typ Si3N4 oder Zr02 oder PZT ist.
  5. Mikroschalter nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass das Verhältnis zwischen der Höhe der Nanoröhre und der Dicke der Schicht aus elektrisch isolierendem Material bei nahe 0,5 liegt.
  6. Mikroschalter mit elektrostatischer Betätigung nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, dass die Nanoröhren durch einen Abstand voneinander getrennt sind, der größer ist als ihre Höhe, so dass elektrische Durchschlagphänomene vermieden werden.
  7. Verfahren zur Herstellung eines Mikroschalters nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, dass es Folgendes beinhaltet:
    - Aufwachsenlassen von Nanoröhren, die auf der Oberfläche der Elektrode orientiert sind;
    - Absetzen einer Schicht aus elektrisch isolierendem Material auf die Oberfläche der Elektrode, bedeckt von der von den Nanoröhren gebildeten Senke.
  8. Verfahren zur Herstellung eines Mikroschalters nach Anspruch 7, dadurch gekennzeichnet, dass das Aufwachsenlassen der auf der Oberfläche der Elektrode orientierten Nanoröhren das Aufwachsenlassen durch katalytisches Absetzen von Kohlenwasserstoffen ausgehend von katalytischen Partikeln beinhaltet.
EP10189620.7A 2009-11-03 2010-11-02 Kapazitiver Mikroschalter, der einen Ladungsablass aus Nanoröhren umfasst, die auf einer Steuerelektrode gerichtet sind, und Herstellungsverfahren Active EP2317533B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0905260A FR2952048B1 (fr) 2009-11-03 2009-11-03 Micro-commutateur capacitif comportant un drain de charges a base de nanotubes orientes sur l'electrode basse et procede de fabrication

Publications (2)

Publication Number Publication Date
EP2317533A1 EP2317533A1 (de) 2011-05-04
EP2317533B1 true EP2317533B1 (de) 2014-01-22

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US (1) US8497751B2 (de)
EP (1) EP2317533B1 (de)
FR (1) FR2952048B1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010144051A1 (en) * 2009-06-11 2010-12-16 Agency For Science, Technology And Research Microelectromechanical system (mems) device, method of operating the same, and method of forming the same
FR2978135A1 (fr) * 2011-07-20 2013-01-25 Thales Sa Composant mems-rf a materiau piezoelectrique electrostrictif
KR102005808B1 (ko) * 2011-09-02 2019-07-31 카벤디시 키네틱스, 인크. Ｍｅｍｓ 장치용으로 병합된 레그 및 반가요성 고정장치
FR2986912B1 (fr) * 2012-02-09 2014-03-28 Thales Sa Microcommutateur hyperfrequences et son procede de fabrication
CN113891845B (zh) * 2019-05-28 2023-10-20 B和R工业自动化有限公司 运输装置
FR3107372B1 (fr) * 2020-02-14 2022-02-04 Commissariat Energie Atomique Dispositif capacitif
CN114019523B (zh) * 2021-11-04 2022-05-17 中国水利水电第十二工程局有限公司 一种水利工程监理用测距装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2841389B1 (fr) * 2002-06-21 2004-09-24 Thales Sa Cellule dephaseuse pour reseau reflecteur d'antenne
FR2845075B1 (fr) * 2002-09-27 2005-08-05 Thales Sa Microcommutateurs a actuation electrostatique a faible temps de reponse et commutation de puissance et procede de realisation associe
KR100761476B1 (ko) * 2004-07-13 2007-09-27 삼성전자주식회사 반도체를 이용한 멤스 ｒｆ-스위치
KR100653083B1 (ko) * 2004-12-27 2006-12-01 삼성전자주식회사 Ｒｆ 스위치
JP4405427B2 (ja) * 2005-05-10 2010-01-27 株式会社東芝 スイッチング素子
FR2901781B1 (fr) * 2006-05-31 2008-07-04 Thales Sa Structure de micro-commutateurs radiofrequence ou hyperfrequence et procede de fabrication d'une telle structure
FR2901917B1 (fr) * 2006-05-31 2008-12-19 Thales Sa Circulateur radiofrequence ou hyperfrequence
FR2906062B1 (fr) * 2006-09-15 2010-01-15 Thales Sa Systeme anti-intrusion pour la protection de composants electroniques.
FR2930374B1 (fr) * 2008-04-18 2011-08-26 Thales Sa Circulateur radiofrequence a base de mems.
WO2010023720A1 (ja) * 2008-08-25 2010-03-04 株式会社 東芝 構造体、電子装置及び構造体の形成方法
JPWO2010050277A1 (ja) * 2008-10-31 2012-03-29 日本電気株式会社 容量可変素子及びその製造方法
FR2940503B1 (fr) * 2008-12-23 2011-03-04 Thales Sa Condensateur commute compact mems
US9013092B2 (en) * 2010-06-02 2015-04-21 Indian Institute Of Science Energy harvesting devices using carbon nanotube (CNT)-based electrodes

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Publication number Publication date
FR2952048B1 (fr) 2011-11-18
US8497751B2 (en) 2013-07-30
EP2317533A1 (de) 2011-05-04
US20110100793A1 (en) 2011-05-05
FR2952048A1 (fr) 2011-05-06

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