EP2269237A2 - Module del à couche de conversion de couleur de type calotte - Google Patents

Module del à couche de conversion de couleur de type calotte

Info

Publication number
EP2269237A2
EP2269237A2 EP09737877A EP09737877A EP2269237A2 EP 2269237 A2 EP2269237 A2 EP 2269237A2 EP 09737877 A EP09737877 A EP 09737877A EP 09737877 A EP09737877 A EP 09737877A EP 2269237 A2 EP2269237 A2 EP 2269237A2
Authority
EP
European Patent Office
Prior art keywords
led module
led
module according
light
led chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP09737877A
Other languages
German (de)
English (en)
Inventor
Wolfgang Oberleitner
Krisztian Sasdi
Erwin Baumgartner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumitech Patentverwertung GmbH
Tridonic GmbH and Co KG
Original Assignee
Ledon Lighting Jennersdorf GmbH
Lumitech Produktion und Entwicklung GmbH
Tridonic Jennersdorf GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ledon Lighting Jennersdorf GmbH, Lumitech Produktion und Entwicklung GmbH, Tridonic Jennersdorf GmbH filed Critical Ledon Lighting Jennersdorf GmbH
Publication of EP2269237A2 publication Critical patent/EP2269237A2/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

Definitions

  • the present invention relates generally to the field of LED modules, i. Modules in which an LED chip ('LED die') is applied to a carrier, generally platform.
  • LED modules i. Modules in which an LED chip ('LED die') is applied to a carrier, generally platform.
  • a transparent layer to the LED chip in such LED modules by known techniques (for example, Stenzeltechnik) ("Dispensing").
  • the LED chip There are different technologies for mounting the LED chip on the platform.
  • COB chip-on-board
  • SMT Surface Mount Technology
  • the chip is usually surrounded with a reflective material to reduce the amount of light that could otherwise be lost by scattering effects.
  • the entirety of the material surrounding the LED chip is referred to as a 'package'.
  • Task of the 'Packages' is, in addition to improving efficiency through Pre-alignment of the emitted light by means of reflective surfaces (ceramic, metal, etc.) in particular to ensure the electrical supply of the LED chip (for example, by vias through the package or bonding wires) and to ensure effective heat dissipation from the LED chip to the environment ,
  • the transparent dispensing material for example, silicone and epoxy resin is known.
  • the transparent dispensing material may optionally contain wavelength-converting substances (hereinafter referred to as phosphors), scattering particles for better mixing of the converted spectrum with the spectrum originally emitted by the LED chip and additives for adapting rheological parameters such as viscosity, storage modulus and loss modulus.
  • phosphors wavelength-converting substances
  • scattering particles for better mixing of the converted spectrum with the spectrum originally emitted by the LED chip
  • additives for adapting rheological parameters such as viscosity, storage modulus and loss modulus.
  • the uncured mixture of the dispensing material with optionally incorporated phosphors ("phosphors"), viscosity additives, etc. is hereinafter also referred to as 'paste'.
  • EP1786045A2 it is known to apply a dispensing layer via an LED chip mounted in a recess of a platform by means of a dispensing process.
  • an LED module comprising:
  • At least one LED chip that emits monochromatic light of a first spectrum
  • a platform onto which the LED chip is applied a reflective wall formed separately or integrated with the platform, the LED chip surrounding on all sides, and
  • the dispensing layer extends in a dome-shaped manner beyond the reflecting wall such that the following equation is satisfied: 0, 1 * bl ⁇ h1 ⁇ 0.5 * bl where h1 is the elevation of the dome-shaped
  • Dispens Mrs measured from the uppermost point of the reflective wall to the apex of the dome, and bl the diameter of the recess formed by the reflective wall, measured as the distance of the center axis of the wall is.
  • the dispensing layer is, for example, a color conversion layer with phosphor particles, which partially convert the first spectrum of the LED chip into light of a second spectrum, wherein the LED module emits a mixed light of the first and the second spectrum.
  • the dispensing layer may have scattering particles.
  • the dispensing layer may have viscosity-increasing substances, such as, for example, silica.
  • the equation satisfies 0.15 * 231 ⁇ hl ⁇ 0.3 * bl or 0.2 "-jbl ⁇ hl ⁇ 0.25 * bl.
  • hl is greater than 200 ⁇ m, preferably greater than 250 ⁇ m, more preferably greater than 300 ⁇ m.
  • the platform can, for example, be manufactured on the basis of silicon.
  • the outer edges of, for example, square or rectangular LED module may have a length in the range of 2mm to 3mm.
  • the maximum diameter b2 of the calotte can be, for example, at most 10%, preferably 5% smaller than the distance bl of the center axis of the wall.
  • the distance from the LED chip to the reflective wall is at most 0.5 mm. Optimally, this is in the range between 0.1 mm and 0.2 mm.
  • the reflective wall may be vertically aligned.
  • the reflective wall may form a frame that surrounds the at least one LED chip.
  • the invention proposes an LED module comprising:
  • At least one LED chip that emits monochromatic light of a first spectrum
  • the distance from the light-emitting diode chip to the reflective wall is a maximum of 0.5 mm, preferably it is in the range between 0.1 mm and 0.2 mm.
  • the dispensing layer is, for example, a color conversion layer with phosphor particles, which partially convert the first spectrum of the LED chip into light of a second spectrum, wherein the LED module emits a mixed light of the first and the second spectrum.
  • the dispensing layer may have scattering particles.
  • the dispensing layer may have viscosity-increasing substances, such as, for example, silica.
  • the dispensing layer preferably has a flat, concave or convex surface on the side facing away from the platform.
  • the assembly consisting of the LED chip, the dispensing layer and the reflective wall may be surrounded by optics formed by a lens.
  • the reflective wall is preferably oriented vertically.
  • the reflective wall forms a frame that surrounds the at least one LED chip.
  • the invention also relates to an LED module arrangement, comprising a plurality of connected to a common platform LED modules of the type mentioned above.
  • the dispensing layers overlap with the reflector walls, adjacent dispensing layers do not run into each other and are spaced from each other on a common reflector wall.
  • the dispensing layer can be applied, for example, with a viscosity of more than 50 PaS, preferably between 60 and 80 PaS.
  • the dispensing layer can be applied at a pressure of more than 10 bar, preferably less than 15 to 20 bar.
  • a higher pressure is advantageous because the flow behavior during dispensing is improved by high pressure in the short term.
  • the storage modulus of the dispensing layer may be between 500-1000, preferably 500-1000 when applied.
  • FIG. 1 shows a lateral sectional arrangement of a first exemplary embodiment of an LED module according to the invention
  • 2 shows a second embodiment of an LED module according to the invention
  • 3a-3c is a diagram for explaining the geometric dimensions of the
  • Color conversion used color conversion material in three different embodiments
  • Fig. 5a u. 5b shows a fourth embodiment of an LED module according to the invention.
  • Fig. 6 is a plan view of an inventive arrangement of LED modules.
  • an LED module 1 has, for example, a wafer-like platform 2, which can be manufactured, for example, on silicon basis. On the top 3 of this platform 2, an LED chip 4 is arranged. However, it is also possible to use several LED chips in the LED module. The use of OLEDs is also conceivable.
  • a SiC 2 layer may be applied.
  • ie electrodes 5, 5 'on the top of the LED chip 4 are by means of bonding wires 6, 6' with metallization pads 7, 7 'on the top of the platform 2 electrically connected.
  • a reflector wall 9 Surrounding the side of the LED chip 4 at a defined distance, a reflector wall 9 is provided, which may likewise consist of silicon.
  • This reflector wall 9 may be integrally formed with the platform 2 (for example, by an etching process), or be placed on the platform 2 as a separate component. In this way, the reflector wall 9 form a frame that surrounds the at least one LED chip 4.
  • at least the inner walls 10 of this reflector wall 9 are inclined at an angle ⁇ .
  • these inner sides 10 are also formed reflective, for example by polishing these surfaces or by coating, for example with a metal layer.
  • the reflector wall may, for example, have a reflector made of Teflon.
  • the top 13 of each reflector wall 9 is preferably flat.
  • a dispensing layer 11 is applied above the LED chip 4, which a dispensing layer 11 is applied.
  • This dispensing layer 11 fills the space defined by the reflector wall 9, which therefore lies partially laterally of the LED chip 4 and partially above it.
  • the dispensing layer 11 extends beyond an elevation hi in the form of a cap beyond the highest point of the reflector wall 9.
  • This highest point of the reflector wall 9 is arranged in Fig. 1 such that it at a height h 2 over the top of the platform 2 is located. More precisely, the height hi denotes the elevation of the vertex 12 of the dome-shaped dispensing layer over the highest point of the reflector wall 9.
  • the width of the base of the dome ie the diameter of the dome at the top of the reflector wall 9 is indicated in Fig. 1 with b 2 .
  • bj denotes the width (i.e., the diameter of round shape) of the highest point of the inclined inner sides 10 of the reflector wall 9.
  • the diameter of the preferably circular reflector wall 9 is designated, measured on the inside at the center line, which divides the upper side 13 of the reflector wall 9 in half.
  • the width bl therefore corresponds to the diameter of the circular reflector wall 9, measured on the vertical axis of symmetry of the reflector wall.
  • the diameter b 2 that is, the diameter of the base of the dome 11 is selected such that it is at most 10%, preferably 5% or even less than the diameter bl.
  • the calottes almost adjoin one another, but without running into one another.
  • the dome-shaped dispensing layers overlap with the upper side 13 of the preferably flat reflector wall.
  • the coupling efficiency of the light can be increased, this effect being higher according to the invention
  • the efficiency gain of the light exit is greater than, for example, for blue or green LEDs, the larger the ratio hl / bl, and
  • the fewer phosphors are contained in the dispensing matrix, i. With the same chip and chip power, the efficiency gain is higher for transparent, monochromatic LEDs (i.e., without converting phosphors) than for corresponding color-converted LEDs.
  • red LEDs 30-40% blue LEDs: 20-30% white LEDs: 6,500 k) 12-17%
  • a dispensing layer with high convexity is achieved by, on the one hand, adding viscosity-increasing substances, for example, to the silicone matrix.
  • These viscosity-increasing substances may be, for example, coated or uncoated silica.
  • the Dispensrea very high shear forces are generated using Dispensnadeln and a high dispensing pressure, whereby a short-term flow of otherwise high-viscosity paste is possible.
  • the high convexity also has a positive effect on the color homogeneity of the light in white light LEDs.
  • homogeneity is understood to mean how much the color temperature changes when viewed in a polar diagram over the different emission angles.
  • the path of light through the highly convex layer at the edge of the dispensing layer is substantially the same as the path at the center of the dispensing layer.
  • the reflector wall 9 does not have to be round or elliptical in plan view, but rather may be square or rectangular.
  • the illustrated in Fig. 2 and provided with the reference numeral 1 LED module shows a further embodiment of the LED module according to the invention.
  • the dispensing layer 11, ie the color conversion material can have a flat surface.
  • a lens 20 is set on the reflector wall 20.
  • the LED module first again at least one - preferably blue light-emitting LED chip 4, which is on a platform 2, ie a base, arranged, which has an insulating layer 22 and an electrically conductive layer with traces 23, wherein leads this bonding wires 6 for contacting the light-emitting diode chip 4 to the top side leads.
  • the base 2 could also be configured in another way. In particular, special measures could be taken which enable effective heat dissipation from the light-emitting diode chip 4.
  • a color conversion material 11 is provided, which surrounds the light-emitting diode chip 4 and has color conversion particles, in particular phosphors, which convert at least part of the light into light of a different wavelength implement.
  • a reflective wall 9 which may be formed for example by a metallic reflector or diffuse reflective and this example, Teflon or barium sulfate.
  • the reflective wall 9 is already mounted at a distance of less than 0.5 mm around the light-emitting diode chip 4, optimally it is approximately 0.1 mm to 0.2 mm from the side surfaces of the light-emitting diodes - Chips 4 removed.
  • the wall 9 in this way again forms a border around the LED chip frame. It is conceivable that such a frame still has a second area. This could be used as a special protection for the bonding wire 6.
  • This means that the region of the conductor track 23, which is electrically contacted with the bonding wire, is bordered by the second frame region and thus protected.
  • the second frame region is filled with a means, for example with silicone, after the bonding wire has been contacted with the conductor track during manufacture of the LED module.
  • the - preferably vertically oriented reflective wall 9 is laterally emitted from the light-emitting diode chip 4 radiated light again and thus initially restricted the size of the light-emitting surface to the upper opening of the reflector 9. Further, light leaking laterally from the light emitting diode chip 4 is partially converted in the surrounding color conversion material 11, or that portion which was not absorbed and reacted upon first passing through the phosphor particles is reflected on the reflection wall 9 is reflected and subsequently returned again until this light has a white spectral distribution and emerges at the top of the color conversion material 11.
  • the arrangement consisting of the LED chip 4, the color conversion material 11 and the reflector 9 is finally surrounded by an optic, which is formed by a lens 20 which encloses the arrangement.
  • the lens 20 is designed such that it only has a curved surface in its upper region in order to image the light emerging at the top of the color conversion material 11 in the desired manner.
  • the lower cylindrical portion of the lens has no optical function, since due to the confinement of the light emitting area by means of the reflector 9 in these areas no light leaks anyway.
  • the reflector 9 thus makes it possible to use a very simple and compact designed lens which, in spite of everything, completely reflects the light emitted by the light-emitting diode chip and if necessary converted by the color conversion material 11.
  • laterally emerging light which has an undesired color mixture and therefore could not be used, is not present in the LED module according to the invention.
  • FIG. 3a shows a part of a third exemplary embodiment of the LED module according to the invention.
  • the distance between the side surface of the light-emitting diode chip 4 and the reflector 9 is denoted by x
  • the distance from the surface of the light-emitting diode chip 4 to the surface of the color conversion material 11 is designated by h.
  • the distance x between the light-emitting diode chip and the reflector 9 is selected to be very small according to the invention and is at most 0.5 mm, preferably only 0.1 mm to 0.2 mm.
  • An upper one Limitation for the height h of the color conversion layer does not exist in principle, since the generation of the mixed light is optimized, the greater the height.
  • the probability of implementing the light emitted by the light-emitting diode chip 4 is proportional to the path length of the light through the color conversion material 11, so that the greatest possible thickness should be sought to achieve a homogeneous light output.
  • an upper limit for the thickness h of 3 mm is preferably selected, since, overall, the aim is also to achieve the most compact and flat possible configuration of the LED module.
  • a difference from the second exemplary embodiment of an LED module illustrated in FIG. 2 in the arrangement in FIG. 3 a is that now the electrical contacting of the light-emitting diode chip 4 no longer takes place via bonding wires. Instead, the chip 4 is arranged in the illustrated embodiment "face down", ie in an inverted manner The contacting takes place in such a case by means of so-called bumps 24, which directly establish a contact between the layer with the conductor tracks 23 and the surface of the chip 4.
  • bumps 24 directly establish a contact between the layer with the conductor tracks 23 and the surface of the chip 4.
  • the bumps 24 can be electrically connected to metallic vias, for example of Au, Al or Ag, which serve to connect the electrodes of the LED chip 4 to the rear side of the platform 2.
  • FIG. 4 A complete arrangement of a light-emitting diode arrangement in which the reflector 9 with the color conversion material 11 and the light-emitting diode chip 4 is then surrounded by a lens arrangement 20 is shown in FIG. 4.
  • 3b and 3c show further embodiments of the color conversion material 11, which is surrounded by the reflection wall 9. This can, as shown in Figure 3b, also have a concave surface. A convex surface is also conceivable, as shown in FIG. 3c. Furthermore, the
  • LED module here two LED chips 4 each. However, it is also possible to use more or less LED chips.
  • FIGS. 5a and 5b now show a further exemplary embodiment of an LED module 1 according to the invention in which a so-called front lens 21, which is arranged at a distance from the surface of the color conversion material 11, is used.
  • the LED module 1 again initially has the same elements as the embodiment of FIG. 4, wherein the same components are provided with the same reference numerals.
  • spacers 25 on the upper side of the attachment lens 21 is arranged.
  • the height of the spacers 25, which may be formed by a further insulating layer, for example, is selected such that the auxiliary lens 21 is separated from the color conversion material 11 via a small air gap 26. This allows a particularly efficient imaging of the light emanating from the top of the color conversion material 11.
  • the light that exits through the surface of the color conversion material 11 is now coupled into the conversion lens 21 via the air gap 26.
  • the light is distributed throughout the air due to the control of the phosphor material and the refractive index transition from the phosphorus matrix material to air, i. the light output is seen in all directions substantially the same size.
  • This effect is shown in Fig. 5b.
  • the light rays must then be e.g. for a 40 ° lens now be deflected by a maximum of 21.8 °, which can be realized without much effort and in particular can be carried out without major losses.
  • the structure shown with the laterally limited by a reflector color conversion material thus offers the possibility of light - with the exception of Fresnel reflections - almost 100%.
  • the useful light component within a desired target range can thus be increased substantially.
  • a more effective color mixing is achieved, which ensures that even with a lens or other conventional optics white mixed light can be effectively homogeneously displayed.
  • LED modules are arranged adjacent to each other to form an LED module assembly.
  • This LED module assembly has a common platform 2.
  • Adjacent Dispens füren (12, 12 ') may overlap a common reflector wall, without running into each other.
  • a distance a which is smaller than the width 13 of the above-planar reflector wall, exists between two adjacent calotte-shaped dispensing layers.
  • additional optics are used, as shown in Fig. 2, then preferably each individual LED module is covered by such optics. It is also conceivable that several LED modules are covered by a common look. If this optic acts as a diffuser, then the emitted light of these LED modules can be mixed.
  • the invention particularly relates to COB and SMT modules with LED chips. These give rise to the following Advantages, in particular for the embodiment of Fig.l:
  • the chip density on the circuit board can be increased.
  • the individual cavities are densely covered on a Si wafer, on which - in 8-inch wafers - up to several thousand
  • Packing density - the height hi, on the other hand - at a given hi - the packing density can be increased.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Optical Measuring Cells (AREA)

Abstract

L'invention concerne un module DEL présentant au moins une puce de DEL (4) qui émet de la lumière monochrome d'un premier spectre, une plate-forme (2) sur laquelle est appliquée la puce de DEL, une paroi réfléchissante (9) conçue de manière séparée ou intégrée à la plate-forme, qui entoure entièrement la puce de DEL et une couche d'application (11) appliquée au-dessus de la puce de DEL. La couche d'application s'étend sur la paroi réfléchissante, à la manière d'une calotte, de sorte à satisfaire l'équation suivante: 0,1*b 1 = h 1 = 0,5*b 1 , : h 1 désignant le surhaussement de la couche d'application de type calotte, mesuré du point le plus élevé de la paroi réfléchissante au sommet de la calotte, et b 1 désignant le diamètre de la cavité formée par la paroi réfléchissante, mesurée comme étant la distance à partir de l'axe médian de la paroi.
EP09737877A 2008-04-30 2009-04-29 Module del à couche de conversion de couleur de type calotte Ceased EP2269237A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE202008005987U DE202008005987U1 (de) 2008-04-30 2008-04-30 LED-Modul mit kalottenförmiger Farbkonversionsschicht
PCT/EP2009/003103 WO2009132833A2 (fr) 2008-04-30 2009-04-29 Module del à couche de conversion de couleur de type calotte

Publications (1)

Publication Number Publication Date
EP2269237A2 true EP2269237A2 (fr) 2011-01-05

Family

ID=40908541

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09737877A Ceased EP2269237A2 (fr) 2008-04-30 2009-04-29 Module del à couche de conversion de couleur de type calotte

Country Status (5)

Country Link
US (1) US8502251B2 (fr)
EP (1) EP2269237A2 (fr)
CN (1) CN102057508B (fr)
DE (1) DE202008005987U1 (fr)
WO (1) WO2009132833A2 (fr)

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DE102010023955A1 (de) * 2010-06-16 2011-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
JP2012039031A (ja) * 2010-08-11 2012-02-23 Nitto Denko Corp 発光装置
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WO2009132833A2 (fr) 2009-11-05
CN102057508A (zh) 2011-05-11
DE202008005987U1 (de) 2009-09-03
WO2009132833A3 (fr) 2010-01-28
CN102057508B (zh) 2012-08-22
US8502251B2 (en) 2013-08-06
US20110057226A1 (en) 2011-03-10

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