EP2242657A2

EP2242657A2 - Security element and method for producing the same

Info

Publication number: EP2242657A2
Application number: EP09711080A
Authority: EP
Inventors: Winfried HOFFMÜLLER; Marius Dichtl; André Gregarek
Original assignee: Giesecke and Devrient GmbH
Current assignee: Giesecke and Devrient GmbH
Priority date: 2008-02-12
Filing date: 2009-02-09
Publication date: 2010-10-27
Anticipated expiration: 2029-02-09
Also published as: WO2009100869A3; WO2009100869A2; US8534709B2; US20100320742A1; DE102008008685A1; EP2242657B1; ATE526457T1

Abstract

The present invention relates to a method for manufacturing a security element (12) having a metalized microrelief pattern and a negative pattern in register therewith, in which P) a substrate (20) is provided with an embossing pattern having elevations (24) and depressions (26) that form first and second regions having different first and second height levels, wherein the desired microrelief pattern (28) is introduced into the first regions of the embossing pattern, and the second regions of the embossing pattern are developed in the form of the desired negative pattern, M) the embossing pattern with the first and second regions is contiguously metalized (30), and L) the metalized embossing pattern is impinged on with laser radiation, to selectively remove the metalization (30) in the second regions of the embossing pattern through the action of the laser radiation.

Description

Security element and method for its production

The invention relates to a security element with a metallized micro-relief structure and a negative pattern and a method for its preparation.

Data carriers, such as securities or identity documents, but also other valuables, such as branded articles, are often provided with security elements for the purpose of security, which permit verification of the authenticity of the data carrier and at the same time serve as protection against unauthorized reproduction. The security elements can be embodied, for example, in the form of a security thread embedded in a banknote, a covering film for a banknote with a hole, an applied security strip or a self-supporting transfer element, which is applied to a document of value after its manufacture.

To increase security and as counterfeit protection, the security elements are often provided with negative patterns, such as a so-called negative script. These negative patterns are formed in particular by metal-free regions in an otherwise continuous metallization of the security element.

For the production of such metal-free regions, WO 99/13157 describes a washing process in which a translucent carrier film is printed with a desired pattern using a high-pigment-content printing ink. Due to the high pigment content, the ink forms a porous, sublime color after drying. A thin cover layer is then formed on the printed carrier film, which in the region of the paint application only partially breaks off the color body due to its large surface and the porous structure. covers. The application of paint and the overlying covering layer can then be removed by washing with a suitable solvent, so that recesses are produced in the covering layer in the originally printed regions of the carrier film. By the achievable sharp contours can be introduced by printing a logo, for example, a legible negative writing in the cover layer.

Metallized holograms, holographic grating images and other hologram-like diffraction patterns can also be provided with a negative pattern by means of such a washing process or by printing a resist mask on the hologram metallization and a subsequent etching step. With conventional methods, however, it is not possible to form the relief structures of the hologram in exact register with the hologram metallization and the metal-free regions of the negative pattern. Since for the printing of a wash ink or a resist varnish, which determine the position of the later negative patterns and separate steps are required for the embossing of the hologram, an exact positioning of embossing and negative patterns can not be guaranteed.

Based on this, the object of the invention is to avoid the disadvantages of the prior art and, in particular, to specify a method for producing a security element having a metallized microrelief structure and a negative pattern matched thereto and a correspondingly produced security element.

This object is achieved by the method having the features of the main claim. An associated security element and a data carrier with such a security element are in the independent claims specified. Further developments of the invention are the subject of the dependent claims.

According to the invention, in a method for producing a security element having a metallized microrelief structure and a negative pattern matched thereto

P) a carrier having an embossed structure with elevations and depressions, which form first and second areas with different first and second height levels,

wherein the desired microrelief structure is introduced into the first regions of the embossed structure, and

the second regions of the embossed structure are formed in the form of the desired negative pattern,

M) the embossed structure with the first and second areas is metallized over the entire surface, and

L), the metallized embossing structure is exposed to laser radiation in order to selectively remove the metallization in the second regions of the embossed structure by the action of the laser radiation.

The microrelief structure of the security element can in particular represent a diffractive structure, such as a hologram, a holographic grating image or a hologram-like diffraction structure, or else an achromatic structure, such as a matt structure with a non-colored, typically silvery-matt appearance, a blaze grating with a sawtooth groove profile or Fresnellinsen- arrangement. The dimensions of the structural elements of the diffractive microrelief structures are usually in the order of magnitude of the light wavelength, that is to say generally between 300 nm and 1 μm. Some microrelief structures also have smaller structural elements, such as sub-wavelength gratings or moth eye structures, whose structural elements may also be smaller than 100 nm.

In an advantageous variant of the invention, the microrelief structure is introduced in step P) into first, recessed areas with a low level height, and the negative pattern is formed by second, raised areas with a large level height.

In this case, after the metallization step M), a cover layer which absorbs laser radiation is preferably applied to the metallized embossed structure, which fills the depressions of the embossed structure. After their application, the laser-absorbing cover layer is expediently removed from the raised regions of the metallized embossed structure, in particular scraped off or wiped off. In this case, a technically unavoidable, thin Tonungsfilm the laser beam absorbing cover layer remain on the raised areas of the metallized embossed structure. As explained in more detail below, such a tinting film can surprisingly even support and promote the desired demetallization of the raised areas.

With regard to the toning film remaining on the raised areas, it should be noted that, with a suitable choice of the substrate to be coated (embossing lacquer), this may possibly remain on the raised areas even without prior doctoring. In practice, it has been found that the cover layer material can be applied to suitable embossed coating substrates. Straten predominantly in the wells and a thin Tonungsfilm remains on the raised areas.

The laser-absorbing cover layer advantageously contains laser-beam-absorbing pigments or dyes. For laser radiation in the near infrared, for example, carbon black pigments, antimony / tin-based infrared absorbers, or even magnetic pigments, for example based on iron oxides, are suitable. The latter, in addition to the absorption effect which is important for the production, additionally serve as feature substances for automatic authenticity testing of the finished security element are suitable. The concentration of the pigments is between about 1% and about 65%, typically in the range of about 15%, depending on the nature of the pigment.

In other embodiments, the laser beam-absorbing cover layer can also consist of a material which is decomposed by the action of the laser radiation and thereby consumes the incident laser energy. For this purpose, for example, cover layers based on polymethyl methacrylates in question, which can be thermally depolymerized. For example, a concrete facing material may consist of a mixture of 25% Degalan M345 (Degussa), 74% ethyl acetate and 1% of an infrared absorber such as carbon black.

The laser-absorbing cover layer advantageously contains a binder of high temperature resistance. In particular, a high-temperature-resistant UV lacquer provided with an absorber can be applied as a laser-beam-absorbing cover layer. High-temperature UV coatings often contain novolac-modified epoxy acrylates, such as the Ebecryl 639 and Ebecryl 629 coating raw materials offered by Cytec, or the Craynor CN112C60 coating material offered by CrayValley. It is, however, in particular from the electronics sector, also high-temperature resistant coatings known that do not need this component. It goes without saying that for formulating a high-temperature-resistant, radiation-curing lacquer (UV curing or electron beam curing), it is or may be necessary to use other substances, such as photoinitiators or reaction diluents for adjusting the viscosity, in addition to the aforementioned or other lacquer raw materials. Furthermore, the high-temperature-resistant lacquer for adjusting its absorption characteristics as an absorber may contain suitable dyes and / or pigments.

Further, it is advantageous if the laser-absorbing cover layer has a high thermal conductivity and / or a high heat capacity, since the resulting heat can then be dissipated quickly from the applied points, or at moderate temperature increase, a large amount of heat can be absorbed.

The laser-absorbing cover layer can be removed after the demetallization step, for example washed out, or it can remain in the security element and be advantageously integrated into the design of the security element. In the latter case, the cover layer may in particular also contain a feature substance for the visual and / or mechanical authenticity check of the security element.

The loading of the metallized embossed structure with laser radiation in step L) in this variant of the invention expediently takes place from the metallized front side of the embossed structure.

According to a further, likewise advantageous variant of the invention, the microrelief structure in step P) in second, raised areas with a large level height introduced, and the negative pattern is formed by first, recessed areas with a low level height. The loading of the metallized embossed structure with laser radiation in step L) is expediently carried out in this variant of the invention from the rear side of the embossed structure facing away from the metallization.

In order to achieve an interaction between laser radiation and embossed structure, the embossed structure can be formed with a laser-beam-embossing embossing lacquer. Advantageously, laser-absorbing additives are added to the embossing lacquer prior to application to the carrier. Such additives advantageously have a feature substance for the visual and / or mechanical authenticity check of the security element.

In all variants of the invention, the embossing structure for demetallization can be exposed to an infrared laser in the wavelength range from 0.8 μm to 3 μm, in particular with an Nd: Y AG laser. The energy density required for demetallization depends on the metal used, the applied layer thickness and the absorption of the cover layer or the embossing lacquer. The laser intensity is preferably as uniform as possible over the irradiated area, which can be achieved for example by beam shaping of the laser beam profile, in particular by a so-called top hat profile with a substantially rectangular laser beam profile.

In some variants of the invention, the coated carrier contains areas in which control marks for the system control are present. These tax stamps can also be arranged outside the actual embossed motifs. They can advantageously be demetallised separately with a washing process in which, prior to the metallizing step M), a soluble washing color in the form of the desired recesses in the abovementioned is printed rich, and the washing color after the metallization step M) is washed off in the region of the recesses together with the present there metallization by a solvent. Further details of such a washing process can be found in the publication WO 99/13157, the disclosure of which is incorporated in the present application in this respect. A separate demetallization with such a washing process also lends itself to cleanly and reliably demetallize the area of the weld of the tools used to emboss the embossed structure.

The invention also includes a security element for security papers, documents of value and the like having a metallized microrelief structure and a matched negative pattern producible in the manner described and having an embossment pattern with embossments and depressions comprising first and second regions having different first and second level heights form, wherein the metallized microrelief structure is present in the first regions of the embossed structure and the negative pattern is present in the second regions of the embossed structure.

The security element may in particular be a security thread, a security band, a security strip, a patch or a label for application to a security paper, value document or the like. The invention further comprises a data carrier, in particular a branded article, a value document or the like, with a security element of the type described.

Further embodiments and advantages of the invention are explained below with reference to the figures. For better clarity, in The figures waived a true to scale and proportions representation.

Show it:

1 is a schematic representation of a banknote with a hologram security thread according to an embodiment of the invention,

Fig. 2 shows schematically a cross section through the security thread of

Fig. 1,

Fig. 3 in (a) to (d) intermediate steps in the production of the security thread of Figures 1 and 2, and

Fig. 4 in (a) to (c) intermediate steps in the manufacture of a security element according to a further embodiment of the invention.

The invention will now be explained using the example of security elements for banknotes. 1 shows a schematic representation of a banknote 10 provided with a hologram security thread 12 according to the invention. The hologram security thread 12 has a metallized hologram region 14 which is provided with a negative writing 16 which forms the numerical sequence "20" in the exemplary embodiment. According to the invention, the negative information 16 is exactly matched with the embossed relief structures of the hologram 14 and with the hologram metallization. It is understood that the invention is not limited to hologram security threads and banknotes, but can be used in all types of security elements, such as labels for goods and packaging or in the security of documents, ID cards, passports, credit cards, health cards and the same. In the case of banknotes and similar documents, for example, transfer elements may be considered in addition to security threads.

With reference to the schematic cross-section shown in FIG. 2, the security thread 12 has a carrier film 20 which is provided on its upper side with a UV-curing embossing layer 22. The embossing lacquer layer 22 contains an embossed structure with elevations 24 and depressions 26, the depressions 26 additionally having a microrelief structure 28 in the form of the hologram 14 to be represented and a hologram metallization 30, for example of aluminum. On the other hand, the elevations 24 are neither provided with a microrelief embossing nor with a metallization and therefore form a negative pattern 16 within the hologram region 14, which is precisely matched both to the microrelief embossing 28 and to the hologram metallization 30.

In FIG. 2 and the exemplary embodiments described below, the elevations and depressions of the embossed structure are always shown as rectangular structures with only two height levels for the sake of clarity. It is understood, however, that the elevations and depressions in the general case can also be provided with oblique flanks, with rounded transitions and / or with additional structures. Also, only the embossed structure and the layers necessary for the explanation are always shown and other elements of the structure, such as carrier foils, adhesive and protective layers, either shown only schematically or omitted altogether.

The production of a precisely matched security element according to the invention, such as the hologram security thread 12, will now be explained with reference to FIG. 3, the carrier film 20 not being shown for the sake of simplicity of illustration. Referring first to FIG. 3 (a), embossing structure 22 is embossed with embossments 24 and depressions 26 into embossing lacquer layer 22, so that first regions 24 having a high level hi and second regions 26 having a low height h ₂ are formed.

The recessed, second regions 26 of the embossed structure are additionally provided with a microrelief structure 28 in the form of the hologram 14 to be displayed, while the raised first regions 24 are in the form of the desired negative pattern 16.

Then, the embossed structure 24, 26, 28 is coated over its entire surface with a metallization 30, as shown in Fig. 3 (b). For the metallization, for example, aluminum, chromium, copper or silver can be used.

Of course, instead of a simple metal layer, it is also possible to use a multilayer structure which contains a metal layer, such as a color-shifting thin-film element. Such a thin-film element typically has a metallic reflection layer, for example of aluminum, a dielectric spacer layer, for example of SiO 2, and a thin absorber layer, for example of chromium. With particular advantage, it is possible to use thin-layer elements which, due to an absorption maximum lying in the region of the laser wavelength of the demetallizing laser used, are easily demagnetized. can be tallisiert. Such thin-film elements are described in detail in WO 97/31774, the disclosure content of which is incorporated into the present application.

Subsequently, the metallized embossed structure is coated over its entire surface with a laser-beam-absorbing lacquer which fills the depressions 26 of the embossed structure. The applied paint is doctored from the surface of the embossed structure, rolled or wiped, with a technically unavoidable, thin Tonungsfilm 34 usually remains on the elevations 24 of the embossed structure. Overall, this process step results in a metallized embossing structure having a lacquer coating 32 which completely fills the depressions 26 of the embossing structure and which is present on the elevations 24 in a thin toning film 34, as shown in FIG. 3 (c).

In order to demetallize the elevations 24 selectively, the metallized and lacquer-coated embossing structure is exposed to laser radiation 36 over its entire surface. In this case, the laser-beam-absorbing lacquer and the laser parameters, in particular wavelength, beam shape and intensity, are matched to one another in such a way that a sufficient interaction between the laser radiation and the lacquer results for the demetallization. This interaction consists in particular in the absorption of the laser radiation by pigments or dyes present in the lacquer. In some designs, it is not the direct interaction of the lacquer with the laser radiation that is the focus, but its properties with respect to the effects of the laser radiation after its absorption, for example the ability of the lacquer to absorb a large amount of heat and / or the ability to rapidly heat the resulting heat derive from the irradiated areas. In particular, an infrared laser, for example a Nd: YAG laser with a wavelength of 1064 nm, can be used for the laser irradiation. The laser intensity is ideally uniform over the irradiated area, for example in the form of a substantially cylindrical so-called top-hat profile. The energy density that can be achieved depends on the material and the thickness of the metallization 30 and the absorption of the lacquer layer 32 and can be, for example, 1.5 kJ / m ² for the demetallization of a 40 nm thick aluminum layer 30.

Tuned to the irradiation with such a Nd: Y AG laser, in the exemplary embodiment of FIG. 3, a UV varnish of high temperature resistance is used as the laser-beam-absorbing varnish 32, in which an infrared absorber having an absorption maximum in the near infrared is dispersed. As a result of the action of the laser radiation 36 on the lacquer-coated metallization 30, the raised areas 24 are demetallized, while the metallization in the recessed areas 26 is retained. After removal, for example washing, of the absorbent varnish 32, a partially metallized embossed structure is obtained in which the metallized microrelief structures 28, 30 of the indentations 26 are perfectly matched with the negative patterns of the protuberances 24, as shown in FIG. 3 (i.e. ).

Surprisingly, it has been found that a thin toning film remaining in the area of the elevations 24 can even promote demetallization by laser application. Without wishing to be bound by any particular explanation, the mechanism of selective demetallization and the surprising improvement by a thin toning film is currently explained as follows: In the area of the depressions 26 in which the lacquer 32 is present with a large layer thickness, the incident laser radiation to a large extent or even completely in the paint 32 absorbent biert, converted into heat and distributed by the binder portion of the paint in the volume of the recess 26. Also, the possibly resulting in an absorption of the laser radiation in the metallization 30 of the microrelief structure 28 resulting heat is dissipated by the paint 32 of the metal layer and distributed harmlessly. The laser radiation and the heat generated therefore do not reach or only greatly attenuate the metallized microrelief structures 28, 30, so that there is no sufficient energy input for a demetalization.

Considering the area of the elevations 24 initially without a thin toning film, the laser radiation is absorbed there by the metallization without attenuation and leads at suitably selected laser parameters for evaporation, oxidation or other removal of the metallization 30 of the elevations 24. A thin Tonungsfilm 34 can even lead to an increased energy input by the higher absorption of the infrared absorber of the paint 32 compared to the bare metal 30 and thereby promote the demetallization of the elevations 24.

For example, novolac-modified epoxy resin acrylates can contain high-temperature-resistant UV lacquers, even though this constituent does not necessarily have to be present in modern lacquer developments. In addition to a high temperature resistance, the lacquer 32 also preferably has a high thermal conductivity and / or a high heat capacity in order to be able to dissipate and absorb the heat arising at the metallization of the microrelief structure 28. In the sublime areas 24, where the

Lack is only present as a thin toning film, the effect of heat dissipation and heat absorption is low according to current understanding and is also increased by the additional energy input through the Absorption exceeded, so that there is a total of an increased amount of energy for demetallization ready.

The above-described advantageous effect of the thin toning film can in principle also be achieved by applying a thin metal layer, in particular a thin chromium layer. For example, it is very easy to demetallize an approximately 10 nm thick chromium layer, which simultaneously removes overlying layers, which in themselves are difficult to demetallize. The person skilled in suitable processes for applying a thin metal layer described above are known, so will not be discussed further here. The above-described embodiment achieves a similar effect as a thin toning film remaining there by using thin metal layers in the areas to be demetallised. At present, however, the embodiments with demetalization-facilitating thin metal layers, particularly chromium layers, are not preferred.

As infrared absorber, various pigments or dyes known per se to those skilled in the art can be used. The proportion of pigments in the absorbent paint is generally between 1% and 65%, typically about 10% to 20%.

The absorbent lacquer layer may be removed after demetallization, such as shown in the embodiment of FIG. However, it is also possible to leave the lacquer layer in the layer structure after demetallization and, if appropriate, to integrate it into the appearance of the security element. This is useful, for example, when the security element is designed to be viewed from the rear side, that is to say the side of the carrier film. In particular, the binder of the paint layer with regard to its solubility also selected according to whether a subsequent removal of the lacquer layer is provided or not.

In another variant of the invention, the laser-beam-absorbing lacquer layer 32 may also be selected such that it is decomposed by the absorbed laser radiation and thereby largely consumes the irradiated laser energy in regions of large layer thickness, so that there the demetallization wave for the covered metal layer 30 is not there more is exceeded. For example, the varnish 32 in this variant can be constructed from polymethyl methacrylates which can be thermally depolymerized. When the laser is applied, the depolymerization and the evaporation of the lacquer layer endothermic and consume the irradiated laser energy. In the regions of large layer thickness, such as the depressions 26, such a lacquer layer therefore protects the underlying metallization 30, while in the raised regions 24, which have no or only a thin lacquer layer 34, a demetallization takes place.

In a further alternative variant of the method, it is possible to dispense with the application of a separate, absorbent cover layer and to use the embossing lacquer itself as an exposure mask for the laser demetallization, as explained with reference to the illustration of FIG. 4.

In this variant, the laser wavelength of the demetallization laser and the embossing lacquer used to produce the embossed structure are matched to one another in such a way that an interaction between embossing lacquer and laser radiation arises in the abovementioned sense. In particular, a laser wavelength can be selected for the demetallization, in which the embossing lacquer used absorbs, or the embossing lacquer can be intentionally mixed with an absorber for a desired laser wavelength. Next can an embossing lacquer of high temperature resistance can be selected, which absorbs the heat generated in the embossing lacquer or on the metallization well and can dissipate quickly.

In all cases, as illustrated in FIG. 4 (a), the embossing lacquer 42 is applied to a carrier foil 20 and embossed in the form of an embossed structure with protrusions 44 and depressions 46, so that first regions 44 with a high level height hi and second regions 46 with a low level height I12 arise. Unlike in the exemplary embodiment of FIGS. 2 and 3, in this variant of the invention the raised, first regions 44 of the embossed structure are provided with a microrelief structure 48 in the form of the hologram 14 to be displayed, while the recessed, second regions 46 are in the form of the desired negative pattern 16.

With reference to FIG. 4 (b), the embossing structure 44, 46, 48 is subsequently coated over its entire surface with a metallization 50, and the metallized embossing structure is exposed to laser radiation 52 over its entire surface from the rear side. It goes without saying that the carrier foil 20 must be transparent to the laser wavelength for this purpose, or that the layer sequence is transferred to another material before the demetallization and the carrier foil 20 is pulled off.

The embossing lacquer 42 in this process variant itself acts as an exposure mask: In the region of the elevations 44, the embossing lacquer lies in a large layer thickness between the incident laser radiation 52 and metallization 50, so that the laser radiation there, analogous to the above-described case of a lacquer layer present in the depressions 26 , in the embossing lacquer layer 42 to a large extent or even completely absorbed and the resulting heat in the volume of the survey 44 is distributed. A demean Metallization of the present on the elevations 44 metal layer 50 is thereby effectively suppressed. By contrast, in the recessed regions 46, the incident laser energy reaches substantially unattenuated or even through the absorption of the embossing lacquer intensifies the metal layer 50 present there and leads to its demetallization. It is important to ensure that the embossment 46 reaches so low, so the level height h2 is chosen small enough that the absorbed laser energy exceeds the demetallization threshold in the recesses 46.

Overall, therefore, a metallized hologram 44, 50 is also produced in this variant with a perfectly adjusted negative information 46, wherein the role of the raised or recessed areas compared with the embodiment of Figures 2 and 3 is just the opposite.

The laser-absorbing lacquer used in the design of FIGS. 2 and 3 may also be provided with additional features and may contain, for example, magnetic, electrically conductive, thermochromic, phosphorescent, fluorescent or other luminescent feature substances. The additional feature may also lie only in a desired color of the paint. Feature substances can have a function both during demetallization, for example as an absorber, and later as an authenticity feature in the finished security element.

In some embodiments, the mask can be washed out with suitable solvents or even aqueous, which opens up further possible combinations. For example, demetallized areas can be generated in a first step, the shape and position of which are predetermined in the manner explained above by the elevations or depressions of the embossed structure. In order to demetallise other areas, For example, be demetallized from the opposite side by laser irradiation, or the soluble paint can be removed, a resist mask printed and then demetallized again. A combination of the method described above with further demetallization methods can in particular bring about advantages outside the actual motifs, for example in order to reliably demetallize the regions at the weld of embossing tools or regions of control marks which may also lie outside the embossing region of the motifs. It goes without saying that the method according to the invention can be combined with all methods known for demetallization, in particular with demetallization by etching. In such etching demetallization, a resist in the form of a desired motif is generally produced on the metallization and those areas of the metallization which are not covered by the resist are removed by a suitable etchant. Further details of demetallization by means of etching are known to the person skilled in the art.

At the edge, control marks can be coated with a washing ink already after the embossing even before the lacquer coating of the main surface of the embossed structure and can be washed free after the metallization in order to immediately expose the elements which are important for the system control. Details of a usable washing process can be found in the document WO 99/13157, the disclosure of which is incorporated in the present application in this respect.

A separate demetallization by a washing process can also be advantageous in the area of the weld of embossing tools since the topography is often determined there by undesired deposits and then a poorly defined layer thickness is produced when coating with laser-absorbing lacquer.

Claims

Patent claims

1. A method for producing a security element with a metallized microrelief structure and a matched negative pattern, in which

P) a carrier having an embossed structure is provided with elevations and depressions, which form first and second areas with different first and second height levels,

L), the laser beam irradiates the metallized embossed structure in order to selectively remove the metallization in the second regions of the embossed structure by the action of the laser radiation.

A method according to claim 1, characterized in that the microrelief structure is introduced in step P) into first, recessed areas with a low level height, and the negative pattern is formed by second, raised areas with a large level height.

3. The method according to claim 1 or 2, characterized in that after the metallization step M) a laser beam-absorbing cover layer is applied to the metallized embossed structure, which fills the recesses of the embossed structure.

4. The method according to claim 3, characterized in that the laser-absorbing cover layer removed after its application of the raised areas of the metallized embossed structure, in particular scraped or wiped.

5. The method according to claim 3 or 4, characterized in that a thin Tonungsfilm the laser beam absorbing cover layer remains on the raised areas of the metallized embossed structure.

6. The method according to at least one of claims 3 to 5, characterized in that the laser beam-absorbing cover layer contains laser-absorbing pigments or dyes.

7. The method according to at least one of claims 3 to 6, character- ized in that the laser beam absorbing cover layer is decomposed by the action of the laser radiation and thereby the irradiated laser energy is consumed.

8. The method according to at least one of claims 3 to 7, character- ized in that the laser beam-absorbing cover layer contains a binder high temperature resistance.

9. The method according to at least one of claims 3 to 8, characterized in that as a laser beam-absorbing cover layer with a Absorber provided, high temperature resistant UV varnish is applied.

10. The method according to at least one of claims 3 to 9, character- ized in that a material with high thermal conductivity and / or high heat capacity is selected as the laser beam absorbing cover layer.

11. The method according to at least one of claims 3 to 10, characterized in that the laser beam-absorbing cover layer after the

Demetallisierungsschritt is removed.

12. The method according to at least one of claims 3 to 10, characterized in that the laser beam-absorbing cover layer remains in the security element after the demetallization step.

13. The method according to claim 12, characterized in that the laser beam-absorbing cover layer contains a feature substance for visual and / or mechanical authenticity testing of the security element.

14. The method according to at least one of claims 3 to 13, characterized in that the loading of the metallized embossed structure with laser radiation in step L) takes place from the metallized front side of the embossed structure forth.

15. The method according to claim 1, characterized in that the micro-relief structure is introduced in step P) in second, raised areas with a large level height, and the negative pattern is formed by first, recessed areas with a low level height.

16. The method according to claim 15, characterized in that the loading of the metallized embossed structure with laser radiation in step L) takes place from the rear side of the embossed structure facing away from the metallization.

17. The method according to claim 15 or 16, characterized in that the embossed structure is formed in a laser beam-absorbing embossing lacquer.

18. The method according to at least one of claims 15 to 17, characterized in that the embossing lacquer before applying to the carrier laser-absorbing additives are added.

19. The method according to claim 18, characterized in that the Iaserstrahlabsorbierenden additives contain a feature substance for visual and / or mechanical authenticity testing of the security element.

20. The method according to at least one of claims 1 to 19, characterized in that the embossing structure for demetallization with an infrared laser in the wavelength range of 0.8 .mu.m to 3 .mu.m, in particular a Nd: Y AG laser, is applied.

21. The method according to at least one of claims 1 to 20, characterized in that areas in which on the carrier control marks for plant control present and / or areas of welds of the embossing tools used for embossing are demetallized with a washing process, in which before the metallizing step M) a soluble washing ink in the form of desired recesses is printed in said areas, and the washing ink after the metallizing step M) in the region of the recesses, together with the metallization present there, is washed off by a solvent.

22. Security element for security papers, documents of value and the like having a metallized microrelief structure and a paired negative pattern, producible according to one of claims 1 to 21, characterized in that the security element comprises an embossing structure with elevations and depressions, the first and second Form regions with different first and second level heights, wherein the metalized microrelief structure is present in the first regions of the embossed structure and the negative pattern is present in the second regions of the embossed structure.

23. A security element according to claim 22, characterized in that the metallized microrelief structure is present in first, recessed areas with a low level height, and the negative pattern is formed by second, raised areas with a large level height.

24. A security element according to claim 22 or 23, characterized marked, that the wells are filled with a laser beam absorbing cover layer.

25. The security element according to claim 24, characterized in that the laser-beam-absorbing cover layer contains a feature substance for the visual and / or mechanical authenticity check of the security element.

26. A security element according to claim 22, characterized in that the metallized microrelief structure in second, raised areas with is a large level height, and the negative pattern is formed by first, recessed areas with a low level height.

27. The security element according to claim 26, characterized in that the embossing lacquer of the embossed structure contains laser-absorbing additives.

28. The security element according to claim 27, characterized in that the laser-beam-absorbing additives contain a feature substance for the visual and / or mechanical authenticity check of the security element.

29. Security element according to at least one of claims 1 to 28, characterized in that the security element is a security thread, a security tape, a security strip, a patch or a label for application to a security paper, document of value or the like.

30. Data carrier, in particular branded article, value document or the like, with a security element according to one of claims 1 to 29.

31. Use of a security element according to at least one of claims 1 to 29 or a data carrier according to claim 30 for securing against counterfeiting of goods of any kind.