EP2038912A1 - Dispositif d'évaporation sous faisceau électronique - Google Patents

Dispositif d'évaporation sous faisceau électronique

Info

Publication number
EP2038912A1
EP2038912A1 EP07764905A EP07764905A EP2038912A1 EP 2038912 A1 EP2038912 A1 EP 2038912A1 EP 07764905 A EP07764905 A EP 07764905A EP 07764905 A EP07764905 A EP 07764905A EP 2038912 A1 EP2038912 A1 EP 2038912A1
Authority
EP
European Patent Office
Prior art keywords
electron beam
substrate
aperture
diaphragm
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07764905A
Other languages
German (de)
English (en)
Inventor
Gösta MATTAUSCH
Henrik Flaske
Jörn-Steffen LIEBIG
Volker Kirchhoff
Jens-Peter Heinss
Lars Klose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of EP2038912A1 publication Critical patent/EP2038912A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3132—Evaporating
    • H01J2237/3137—Plasma-assisted co-operation

Definitions

  • the invention relates to the field of application of physical vapor deposition (PVD) for the purpose of vacuum coating substrates with functional layers such as for corrosion protection, as decoration, for EMC shielding or thermal insulation and especially to an embodiment of the vapor source, in which Steam is generated by heating an evaporative material with electron beams from axial radiators (hereinafter also called EB-PVD).
  • PVD physical vapor deposition
  • vapor sources of EB-PVD have so-called "transverse guns” in which beam generation, magnetic 270 ° beam deflection and crucible with evaporating material are usually integrated in a compact functional block.
  • Heating at the pressure level of a coating chamber and is directly exposed to the vapors and gases therein (especially in reactive process control).
  • the pressure in the coating chamber must be kept at a low level by appropriately dimensioning the vacuum pumps in order to avoid instabilities in the operation of the electron source.
  • Such deflection systems realized mostly on the basis of current-carrying coils with field-forming pole shoes - represent a significant cost factor, distort the linearity of the deflection field and the focus of the electron beam in a negative way and are significantly dependent on the actual choice of material and geometry of the coating chamber walls in their effect , so that they usually have to be re-optimized for each modification in the vapor deposition.
  • the vapor stream density ⁇ thermal evaporator has a characteristic dependence on the angle ⁇ between the vertical of the Verdampfungsgutoberfest and the starting direction of the vapor particles, in the simplest case of a small area evaporator
  • the layer thickness in the area of the piercing point of the vertical of the material surface of the evaporating material through the substrate plane is maximal and then decreases with increasing lateral spacing thereof.
  • a concave curved large-area substrate holder is therefore usually used, on which the individual substrates are arranged in planes of approximately constant vapor stream density above the evaporator and can be coated stationarily. This approach is impractical for large area flat substrates.
  • the uniformity of the deposited layer thicknesses can be improved in a simple manner by increasing the distance to the evaporator.
  • the vapor yield ratio of the deposited on the substrate to the total amount of evaporated material
  • the demands on the vacuum system of the coating chamber lower residual gas pressure required
  • a frequently practiced way of improving the homogeneity of the layer thickness on large-surface substrates at a moderate distance from the evaporator is to arrange several small-area evaporators spatially distributed over the substrate dimension and to superpose their individual vapor stream density distributions in the substrate plane appropriately. This method brings an increased expenditure on equipment with it.
  • Another way of more evenly distributing the layer thickness sometimes used for feed-coated substrates is to place a special aperture in the coating chamber between the evaporator and the substrate having different opening widths in the transport direction of the substrate (small opening width in the center of the substrate and to increasing opening width at the edges).
  • this so-called “dog bone stop” also leads to a further reduction of the vapor yield, since the retained by an unheated aperture material can not be returned to the evaporator.
  • a characteristic feature of electron beam evaporation is that, depending on the angle of incidence of the electron beam on the vaporization material and its atomic number, a certain fraction of the electrons are not absorbed by the vaporization material, but are scattered back. These backscattered electrons transport a considerable amount of energy, which is removed from the evaporation process and also contributes to the mostly unwanted thermal load of the substrate. To keep away these backscattered electrons of temperature- or charge-sensitive substrates therefore additional means for generating magnetic Ablefelder must be integrated into the coating chamber, which are also referred to as "magnetic traps".
  • the characteristic kinetic energy E k ⁇ n generated by thermal evaporation particles is proportional to the evaporation temperature T v
  • This kinetic energy is smaller by more than an order of magnitude than the particle energies occurring in the alternative PVD method of magnetron sputtering. Consequently, thermal evaporation, especially at high coating rates, often has to be combined with additional means to increase particle energy to achieve adherent and dense layers.
  • a disadvantage of this arrangement is that it makes a significant technological advantage of the thermal evaporation, namely the - relative to the same dynamic coating rates - compared to the sputtering significantly (by a factor of 2 to 3) lower thermal substrate load partially destroyed. This results from the plasma densities necessarily high near the substrate in this activation mechanism and consequent additional thermal substrate loading.
  • the invention is therefore based on the technical problem of providing a device by means of which the disadvantages of the prior art in electron beam evaporators can be overcome.
  • the device is compared to the prior art, a compact and inexpensive mechanical structure, long coating and maintenance intervals, minimal magnetic interference with the coating chamber, a high steam efficiency at the substrate, little "wild layers", a minimal thermal substrate load by thermal radiation or backscattered electrons , a uniformity of the layer thickness with low evaporator substrate distance, a reduced spattering of crucibles with material Nach Pavtt für and universal installation solutions allow.
  • a device according to the invention for electron beam evaporation comprises a vacuum working chamber, an axial radiator for generating an electron beam by means of which a material to be evaporated can be heated and an aperture arranged between the material and a substrate to be coated, which has at least one vapor aperture through which material vapor passes to the substrate wherein the diaphragm comprises a magnet system, by means of which the electron beam can be deflected through the vapor aperture onto the material to be evaporated.
  • the evaporation of the material can either be done without a seal (for example for subliming materials from a rotating cylinder) or from a vessel, again as a water-cooled copper ladle with continuous feeding or as a thermally insulated block (so-called "hot crucible", with or without material supply to the Example via a wire feed) is executable.
  • the aperture between a vessel with evaporant and substrate just a few inches above the top of the vessel, arranged and formed as a horizontal composite cover plate of the vessel, the vessel side of a first layer of temperature-resistant material with low thermal conductivity (for Graphite felt, granulate bedding, gravel packing) and directly above a second layer of water-cooled material with high thermal conductivity (for example copper, solid graphite, aluminum, stainless steel), within which the magnetic deflection system for the electron beam (consisting of current-carrying, elongated coils or permanent magnet) Rods) is arranged.
  • the cover plate can also be arranged directly on the vessel as a kind of vessel lid.
  • the heat-insulating first layer of the composite cover plate is dimensioned so that due to the heat input from the actual evaporation site or the surface of the vaporized material (heat radiation, backscattered electrons, heat of condensation) or by additional heating (for example, with radiant heater or by suitable deflection of the primary Electron beam on absorber coupled to the composite cover plate) sets at its lower side a temperature which, on the one hand, is sufficiently high to prevent the evaporation of layers of the vaporization material (in the case of melting vaporization, for example by condensation of the vapor and dripping / draining of the formed vapor liquid phase back into the vessel), but on the other hand so low that thermal damage does not occur.
  • a heat sink for a defined cooling of the upper side of the heat-insulating first layer of the composite cover plate serves the overlying second layer of water-cooled material with high thermal conductivity, possibly with the interposition of a radiant heat transfer.
  • a radiant heat transition can be achieved, for example, by means of spacing between the two layers.
  • the orifice further contains one or more openings through which the vapor formed in the vessel can pass and reach the substrate.
  • These openings - also referred to as steam aperture - are shaped (in the simplest case rectangular) and measured that of the released with a broad distribution of direction at the vapor-emitting surface of the vaporized steam particles predominantly only the directed to the substrate steam particles can pass through a steam aperture, while the other Steam particles are retained by the panel.
  • the aperture of a device according to the invention in addition to a plate-shaped aperture, the aperture of a device according to the invention, however, for example, also hood-shaped and arranged over the material to be evaporated.
  • the diaphragm partially or completely envelops the material to be evaporated.
  • the vapor aperture of a diaphragm for example by means of covering tongues, that a certain proportion of the vapor flow, in particular from the central regions of the vapor density distribution, is retained directly above the vapor-emitting surface in the evaporator and not enters the chamber or substrate.
  • This can be realized for example with so-called cover tongues, wherein the cover tongues can be arranged such that they can be hit by the primary electron beam with a suitably programmed deflection and thereby heated.
  • the deposited on the Abdeckzonne material is removed by sublimation or melting and dripping of hot Abdeckzonne, this thus cleaned and fed the originally retained material back to the evaporation process.
  • a steam aperture in a device forms the injection channel for the electron beam.
  • magnets permanent magnets or Magnetic coils
  • which generate strong localized magnetic fields with major components in the horizontal plane and perpendicular to the beam entry direction.
  • locally very small curvature radii of the primary electron beam can be realized at deflection angles of advantageously 90 °.
  • the magnetic system for deflecting the electron beam is arranged directly on the axial radiator and / or in a chamber wall, such narrow bending radii of the electron beam through a vapor aperture can not be realized.
  • the electron system for deflecting the electron beam consists of two subcomponents, a subcomponent of which is arranged in the electron beam direction in front of a vapor aperture and a subcomponent after the vapor aperture.
  • the magnetic system component arranged further away from the axial radiator can be dimensioned such that it predominantly influences the backscattering and secondary electrons emitted by the surface of the vaporization material in analogy to the optical reflection law, but less strongly the primary electron beam. Since, in addition, the main region of the energy spectrum of the secondary electrons at energies is significantly lower than that of the primary electron beam, for these electrons predominantly still much smaller curvature radii than for the primary electron beam can be set. A high percentage of the backscattered electrons is therefore retained in the region between the surface of the evaporating material and the diaphragm.
  • the surface regions of the vaporization material which are not located directly under a vapor aperture can advantageously be used to supply new vaporization material.
  • the surfaces of these Nachyogtt ceremoniesszonen should be separated by temperature-resistant and chemically inactive barriers from those of the main evaporation zones in order to keep in the molten phase possibly floating light contaminants of the feed material from the direct area of action of the electron beam.
  • An evaporator can also be designed so that an electrical contacting of the vaporization material, possibly by contacting the vessel and the diaphragm, is possible and a gas discharge can be ignited, for example in the form of an arc discharge for ionization of the vapor.
  • a gas discharge can be ignited, for example in the form of an arc discharge for ionization of the vapor.
  • the formation and stability of this discharge can be achieved by integration of a suitable electron donor (for example, an additional electron donor) Hollow cathode, use of a current-heated tungsten wire or the heatable by the electron beam cover tabs in the steam aperture as a thermionic emitter) are promoted.
  • An acceleration of the ions formed already takes place by the adjusting in the non-homogeneous magnetic field in the vicinity of the steam aperture electric field.
  • an electron beam evaporator is realized in which the magnetic deflection field is integrated in a compact manner directly into the evaporator assembly and suitably shielded and thus little or not interfere with the walls and internals of a coating chamber.
  • an evaporator comprising a material to be vaporized (with or without vessel) and a diaphragm with steam aperture and integrated magnet system, to a universal assembly, which is largely independent of the specific installation situation in a vacuum chamber adapted in a simple manner to different coating chambers and allows for the often desirable horizontal installation of an electron beam gun.
  • An inventive realization of the magnetic deflection field of an electron beam at or within a diaphragm in the immediate vicinity of the material to be evaporated also allows a control of the direction distribution or the trajectories of the backscattered electrons. In the simplest case, this can serve to shield the substrate from the backscattered electrons by deflecting it towards a chamber wall or the diaphragm, as a result of which the thermal substrate load is reduced.
  • a suitably shaped steam aperture in an aperture at the same time allows the entry of the electron beam to the surface of the vaporized material as well as the exit of the vapor. Because of the special arrangement and dimensioning of the integrated or in the aperture integrated magnetic deflection system for the electron beam, these openings can be kept very small. Thus, it is possible to realize vapor streams in which predominantly material vapor passes through the steam aperture, which reaches the substrate, but not its surroundings. As a result, on the one hand, a longer service life is achieved with a given supply of material, and on the other hand, the formation of "wild layers" is suppressed, which is synonymous with longer maintenance intervals.
  • Suitable shaped and electron beam heated cover tabs as part of a shutter to form a steam aperture allow hiding certain
  • Fig. 1 is a schematic representation of a device according to the invention
  • Fig. 2 is a schematic representation of a diaphragm with steam aperture.
  • a device 1 is shown schematically, by means of which is to be vapor-deposited within a vacuum work chamber 2 on a substrate 3, a polycarbonate plate, a copper layer, the arrow indicating the direction of movement of the substrate via substrate 3.
  • a graphite crucible 4 there is the copper material 5 to be evaporated, which is heated by means of an electron beam 7 generated by an axial radiator 6.
  • the crucible 7 is embedded in a layer 8 of quartz gravel for thermal insulation.
  • a diaphragm 9 is arranged in the form of a cover plate for crucible 4, which has a steam aperture 10, through the copper vapor particles 1 1 from the crucible 4 to the substrate 3 can rise.
  • Aperture 9 comprises two layers 12 and 13.
  • the copper material 5 facing layer 12 is made of 40 mm thick graphite felt.
  • Layer 13 is a 30 mm thick, water-cooled copper plate.
  • the copper plate comprises a magnet system 14 consisting of permanent magnet rods 15, 20 mm in diameter, inserted into the copper plate, which deflect the electron beam 7 through the vapor aperture 10 onto the surface of the copper material 5 to vaporize the copper material. Due to the position of the permanent magnet rods 15th within the aperture 8 in the immediate vicinity of the steam aperture 10 very tight bending radii of the electron beam 7 through steam aperture 10 can be realized.
  • the diaphragm 9 is designed as a cover for the crucible 9, the copper vapor particles 1 1 can leave the crucible 9 only through the steam aperture 10 in the direction of the substrate 3, which prevents the formation of "wild layers" on the one hand and on the other hand Most of the process heat in the area between cover plate 9 and crucible 4 is retained, resulting in a higher process efficiency.
  • the magnet system 14 consists of two subsets of permanent magnet rods 15, of which a first subset in the electron beam direction is viewed before steam aperture 10 and a second subset after steam aperture 10.
  • the second subset on the number of permanent magnet rods 15, a stronger total magnetic field than the first subset to simultaneously deflect the backscatter and secondary electrons in the area between diaphragm 9 and copper material 5.
  • Fig. 2 shows a schematic representation of the plan view of a diaphragm 20 with steam aperture 21, as it can also be used in a device according to FIG.
  • the arrow also indicates the direction of movement of a substrate to be coated.
  • Aperture 20 has a tongue 22, which reduces the opening width of the aperture 21 viewed in the direction of movement of a substrate toward the center.
  • a central region of the vapor stream ascending to a substrate is blanked out and thus a more uniform layer thickness distribution over the width of the substrate is achieved.
  • the electron beam for the evaporation of a material is temporarily deflected on tongue 22, so that it is heated, so that material vapor, which deposits on tongue 22, condenses on this and passes back into the vessel for the material to be evaporated.
  • Material dripping back into the vessel is not as critical in a device according to the invention as in devices according to the prior art, because due to the lower radii of curvature of the electron beam in a device according to the invention Also only smaller steam aperture openings are needed, so that caused by Legitropfendes material splashes are reduced towards the substrate.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif pour l'évaporation sous faisceau électronique, comprenant une chambre de travail sous vide (2), une source axiale (6) pour la production d'un faisceau d'électrons (7), au moyen duquel une matière (5) à évaporer peut être chauffée, et un diaphragme (9) disposé entre la matière (5) et un substrat (3) à revêtir, lequel comporte pour la vapeur au moins une ouverture (10), à travers laquelle la vapeur de la matière accède au substrat (3), le diaphragme (9) comportant un système magnétique (14) au moyen duquel le faisceau d'électrons (7) peut être dévié sur la matière (5) à évaporer à travers l'ouverture (10) pour la vapeur.
EP07764905A 2006-07-06 2007-06-28 Dispositif d'évaporation sous faisceau électronique Withdrawn EP2038912A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200610031244 DE102006031244B4 (de) 2006-07-06 2006-07-06 Vorrichtung zum Verdampfen eines Materials mittels eines Elektronenstrahls und zum Abscheiden des Dampfes auf ein Substrat
PCT/EP2007/005715 WO2008003425A1 (fr) 2006-07-06 2007-06-28 Dispositif d'évaporation sous faisceau électronique

Publications (1)

Publication Number Publication Date
EP2038912A1 true EP2038912A1 (fr) 2009-03-25

Family

ID=38421460

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07764905A Withdrawn EP2038912A1 (fr) 2006-07-06 2007-06-28 Dispositif d'évaporation sous faisceau électronique

Country Status (5)

Country Link
EP (1) EP2038912A1 (fr)
JP (1) JP5150626B2 (fr)
CN (1) CN101484966B (fr)
DE (1) DE102006031244B4 (fr)
WO (1) WO2008003425A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009014891B4 (de) 2009-03-25 2012-12-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zum Verdampfen eines Materials in einer Vakuumkammer
CN102315148A (zh) * 2010-06-30 2012-01-11 上方能源技术(杭州)有限公司 用于镀膜的基板传输装置和基板传输方法
US20150357193A1 (en) * 2013-01-30 2015-12-10 Fraunhofer-Ges. Zur Förderung Der Angewandten Forschung E.V. Method for producing an epitaxial semiconductor layer
US10385444B2 (en) 2013-03-15 2019-08-20 United Technologies Corporation Deposition apparatus and methods
CN103983381B (zh) * 2014-05-30 2017-01-25 北京卫星环境工程研究所 真空条件下单颗粒粘附力和带电量的测试系统及测试方法
CN107620047A (zh) * 2017-08-25 2018-01-23 苏州安江源光电科技有限公司 一种用于pvd镀膜的反应腔室以及加工方法
EP3720984A4 (fr) * 2017-12-06 2021-09-01 Arizona Thin Film Research LLC Systèmes et procédés de fabrication additive pour le dépôt de matériaux métalliques et céramiques
DE102018131904A1 (de) * 2018-12-12 2020-06-18 VON ARDENNE Asset GmbH & Co. KG Verdampfungsanordnung und Verfahren
CN110117772B (zh) * 2019-06-14 2024-03-15 费勉仪器科技（上海）有限公司 一种超稳定三电极电子束蒸发源

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345059A (en) * 1965-03-12 1967-10-03 United States Steel Corp Crucible for holding molten metal
DE1814142A1 (de) * 1967-12-13 1969-07-31 Lokomotivbau Elektrotech Einrichtung zum Bedampfen im Vakuum von grossen Flaechen
DE2519537C2 (de) * 1975-05-02 1982-11-04 Leybold-Heraeus GmbH, 5000 Köln Elektronenstrahlgerät für Heiz-, Schmelz- und Verdampfungszwecke mit Ablenksystemen
JPS63247358A (ja) * 1987-04-03 1988-10-14 Matsushita Electric Ind Co Ltd 金属薄膜の製造装置
US4947404A (en) * 1987-11-16 1990-08-07 Hanks Charles W Magnet structure for electron-beam heated evaporation source
JPH0294250U (fr) * 1989-01-17 1990-07-26
DE4225352C1 (de) * 1992-07-31 1993-11-18 Leybold Ag Vorrichtung zum reaktiven Aufdampfen von Metallverbindungen und Verfahren
DE4336680C2 (de) * 1993-10-27 1998-05-14 Fraunhofer Ges Forschung Verfahren zum Elektronenstrahlverdampfen
DE4336681C2 (de) * 1993-10-27 1996-10-02 Fraunhofer Ges Forschung Verfahren und Einrichtung zum plasmaaktivierten Elektronenstrahlverdampfen
DE4342574C1 (de) * 1993-12-14 1995-04-13 Hilmar Weinert Bandbedampfungsanlage

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2008003425A1 *

Also Published As

Publication number Publication date
JP5150626B2 (ja) 2013-02-20
CN101484966A (zh) 2009-07-15
CN101484966B (zh) 2012-05-30
DE102006031244A1 (de) 2008-01-10
WO2008003425A1 (fr) 2008-01-10
DE102006031244B4 (de) 2010-12-16
JP2009542900A (ja) 2009-12-03

Similar Documents

Publication Publication Date Title
DE102006031244B4 (de) Vorrichtung zum Verdampfen eines Materials mittels eines Elektronenstrahls und zum Abscheiden des Dampfes auf ein Substrat
EP0463230B1 (fr) Appareil pour le revêtement de substrats
EP0666933B1 (fr) Installation pour la vaporisation a grand debit par faisceau d'electrons et par action de plasma
DE3206882A1 (de) Verfahren und vorrichtung zum verdampfen von material unter vakuum
DE2547552B2 (de) Schichtaufdampfverfahren und -einrichtung
DE102009019146B4 (de) Verfahren und Vorrichtung zur Hochratenbeschichtung durch Hochdruckverdampfen
DE19546827C2 (de) Einrichtung zur Erzeugung dichter Plasmen in Vakuumprozessen
DE4120941C2 (fr)
WO2013097842A2 (fr) Dispositif pour vaporiser un produit à vaporiser
DE102008032256B4 (de) Vorrichtung und Verfahren zum Abscheiden aus der Dampfphase mit Sputterverstärkung
EP0603464A1 (fr) Procédé pour le revêtement de substrats
DE4020158A1 (de) Vorrichtung zum beschichten von substraten
WO2008092485A1 (fr) Dispositif et procédé permettant d'appliquer un revêtement sur des substrats métalliques en forme de plaques ou de bandes
EP0776987B1 (fr) Appareillage de revêtement sous vide avec un creuset pour recevoir le matériau à évaporer dans la chambre à vide
DE102005040087A1 (de) Verfahren und Vorrichtung zum Abscheiden von Absorber-Schichten für Dünnschicht-Solarzellen
DE69634071T2 (de) Verfahren und Vorrichtung zum Beschichten eines Substrats
DE1796166C3 (de) Verfahren und Vorrichtungen zum Bedampfen aufrechtstehender Substrate, insbesondere Glasscheiben
DE4225352C1 (de) Vorrichtung zum reaktiven Aufdampfen von Metallverbindungen und Verfahren
DE102009037326A1 (de) Verfahren und Vorrichtung zur langzeitstabilen plasmaaktivierten Vakuumbedampfung
DE102013206210B4 (de) Vakuumbeschichtungsvorrichtung und Verfahren zur Mehrfachbeschichtung
DE2628765C3 (de) Vorrichtung zum Aufdampfen insbesondere sublimierbarer Stoffe im Vakuum mittels einer Elektronenstrahlquelle
DE102014110835A1 (de) Vorrichtung zum Bedampfen eines Substrates innerhalb einer Vakuumkammer
EP1397525A1 (fr) Dispositif pour mettre en oeuvre une metallisation sous vide activee par plasma sur de grandes surfaces
EP2746424B1 (fr) Source d'évaporation
DE1270354C2 (de) Verfahren zum vakuumaufdampfen von schichten auf elektrisch isolierende unterlagen aus glas, keramik o.dgl. durch elektronenbeschuss

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20090115

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK RS

DAX Request for extension of the european patent (deleted)
RBV Designated contracting states (corrected)

Designated state(s): DE GB NL

17Q First examination report despatched

Effective date: 20110527

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20150106