EP2020005A1 - Speichervorrichtung - Google Patents
SpeichervorrichtungInfo
- Publication number
- EP2020005A1 EP2020005A1 EP07728171A EP07728171A EP2020005A1 EP 2020005 A1 EP2020005 A1 EP 2020005A1 EP 07728171 A EP07728171 A EP 07728171A EP 07728171 A EP07728171 A EP 07728171A EP 2020005 A1 EP2020005 A1 EP 2020005A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- memory module
- data
- microprocessor
- memory
- memory device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000872 buffer Substances 0.000 claims abstract description 18
- 238000004891 communication Methods 0.000 claims description 11
- 230000003139 buffering effect Effects 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 claims description 6
- 230000006399 behavior Effects 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000013500 data storage Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000012806 monitoring device Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013024 troubleshooting Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
Definitions
- the invention relates to a memory device according to the preamble of claim 1 and a microprocessor device, in particular a control device of a motor vehicle, according to claim 9.
- Control units often need to store data that should be retained when the controller is shut down.
- the invention relates to the manner of storing the data in a separate memory device.
- a memory device according to the preamble of claim 1 is known from
- EP 1 252 627 B1 shows an arrangement for supplying voltage to a volatile semiconductor memory. From DE 100 03 006 Al an arrangement and method for signal processing and storage is known in which filter coefficients are stored in a separate memory area from a microprocessor RAM.
- non-volatile data to be stored in a separate module (eg EEPROM).
- EEPROM electrically erasable programmable read-only memory
- the data is transmitted via a communication line, for example a bus, to this block.
- a communication line for example a bus
- Both this transfer and the nonvolatile storage process take a certain amount of time. If the supply voltage of the controller is interrupted during this period, the storage process is interrupted and the data in the memory module are incomplete and inconsistent.
- sophisticated measures have hitherto been taken by software in the microprocessor on which the applications are running (application microprocessor) (eg multiple filing in the EEPROM, temporary data storage in the application microprocessor) to improve consistency and performance to ensure the completeness of the data. Nevertheless, it is currently in The rule does not rule out that it comes to data loss. This can lead to field recalls and extensive error investigations.
- Saving data that includes at least one non-volatile memory device and an electrical buffer for buffering a supply voltage for the at least one non-volatile memory device.
- this object is achieved by an intelligent memory module with voltage buffering.
- An essential point of the invention is to provide an electrical buffer for buffering a supply voltage for the at least one non-volatile memory module.
- the nonvolatile memory module is referred to below as "memory module”.
- the invention has the advantage that, due to the guarantee of data security and data consistency in the nonvolatile memory module, the complex software backup measures in the application microprocessor can be dispensed with. This provides more memory and runtime for the applications in the microprocessor. Both the development effort for ECUs and troubleshooting in series production are significantly lower.
- the at least one memory module receives its own power supply with its own buffering.
- This buffering is considerably cheaper compared to a buffering of the supply of the application microprocessor, since the energy requirement of the memory module or the memory modules is substantially lower than that of the application microprocessor.
- the memory module independently assumes the data storage and presentation of the data relative to the application microprocessor. He independently assumes the data security and consistency in case of an interruption of the storage process.
- Figure 1 shows an embodiment of a memory device according to the invention in a microprocessor device
- FIG. 2 shows a further embodiment of a memory device according to the invention
- FIG. 3 shows yet another embodiment of a memory device according to the invention in a microprocessor device
- Figure 4 shows an embodiment of a microprocessor device according to the invention.
- FIGS. 1 to 4 each show a nonvolatile memory device 2 for storing nonvolatile data, comprising a nonvolatile memory module 4 and an electrical buffer 6 for buffering a supply voltage for the at least one nonvolatile memory module 4.
- supplied energy source 8 represented in the drawings by a supply connection.
- the nonvolatile memory module 4 contains a nonvolatile data memory 10.
- the nonvolatile data memory 10 may be formed, for example, by an EEPROM (Electrically Erasable Programmable Read Only Memory) or by a plurality of EEPROMs.
- the electrical buffer 6 exclusively buffers the supply voltage of the nonvolatile memory module 4.
- the electrical buffer 6 contains a voltage regulation component 12 (FIG. 1).
- the electrical buffer 6 consists of a voltage regulation component 12.
- the electrical buffer 6 consists of a capacitor 14 and a series resistor 16.
- the capacitor 14 may be formed, for example, by a capacitor.
- the capacitance 14 is connected in parallel with the nonvolatile memory structure.
- the capacitance 14 can be connected in parallel to the nonvolatile memory module to ground.
- the series resistor 16 is connected in series with the memory device 4 and the capacitor 14, as shown in FIG.
- the capacitance 14 is charged via the series resistor 16. Now breaks the supply voltage together, the memory module 4 is powered by the capacitor 14, whereby a possibly still running memory operation can be completed.
- the electrical buffer 6 can be arranged inside the memory module 4, as shown in FIG. Furthermore, the electrical buffer 6 outside the memory module
- the memory module 4 may have a communication port 20.
- the communication port 20 may be a serial communication port 22, to the serial data transmission connection 24 of the memory module 4 with a corresponding communication port 26 of a periphery, for example a microprocessor 27, in particular an application microprocessor 27 on which application programs run. This is shown by way of example in FIG.
- the memory module 4 may have a parallel communication connection 28 for establishing a parallel data transmission connection 30 with a corresponding parallel communication connection 32 of the periphery.
- the memory module 4 may include a voltage monitoring device 34.
- the voltage monitoring device 34 may be connected via a measurement line 36 for voltage monitoring to a power supply line 38 between a power source 8 and the electrical buffer 6, as shown in Figure 1.
- the nonvolatile memory module 4 contains a control logic 40 for maintaining the data and ensuring data consistency in the data memory 10.
- the memory module 4 has a driver 42 for representing the data memory at the communication port 20 in structure and behavior in the form of a RAM module (random access memory module).
- a RAM module random access memory module
- the memory module 4 according to the invention therefore represents itself as a RAM module.
- the driver 42 may be formed by the control logic 40 for the memory module 4.
- the invention further relates to a microprocessor device 44, in particular a control device 46 of a motor vehicle, comprising a microprocessor 27 and at least one of the nonvolatile memory devices 2 described above.
- the nonvolatile memory module 4 forms part of the microprocessor 27 (FIG. 4). This can be done for example in the form of an ASIC (Application Specific Integrated Circuit).
- the nonvolatile memory module 4 in this embodiment communicates with a processor core 48 of the microprocessor 27, for example via a serial data transmission connection 24 (FIG. 4) or via a parallel data transmission connection 30.
- a memory device 2 may also contain two or more nonvolatile memory modules 4.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006021746A DE102006021746A1 (de) | 2006-05-10 | 2006-05-10 | Speichervorrichtung |
| PCT/EP2007/053706 WO2007128653A1 (de) | 2006-05-10 | 2007-04-17 | Speichervorrichtung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP2020005A1 true EP2020005A1 (de) | 2009-02-04 |
Family
ID=38212197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP07728171A Withdrawn EP2020005A1 (de) | 2006-05-10 | 2007-04-17 | Speichervorrichtung |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7898874B2 (de) |
| EP (1) | EP2020005A1 (de) |
| JP (1) | JP4891395B2 (de) |
| KR (2) | KR20110099337A (de) |
| CN (1) | CN101438350B (de) |
| DE (1) | DE102006021746A1 (de) |
| WO (1) | WO2007128653A1 (de) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4317175A1 (de) | 1993-05-22 | 1994-11-24 | Bosch Gmbh Robert | Selbsttesteinrichtung für Speicheranordnungen, Decoder od. dgl. |
| JPH10512081A (ja) * | 1994-10-19 | 1998-11-17 | インテル・コーポレーション | フラッシュ・メモリ用電圧源 |
| DE19964018A1 (de) | 1999-12-30 | 2001-07-12 | Bosch Gmbh Robert | Anordnung zur Spannungsversorgung eines flüchtigen Halbleiterspeichers |
| DE10003006A1 (de) | 2000-01-25 | 2001-07-26 | Bosch Gmbh Robert | Anordnung und Verfahren zur Signalverarbeitung und Speicherung |
| US6791893B2 (en) * | 2002-06-12 | 2004-09-14 | Micron Technology, Inc. | Regulating voltages in semiconductor devices |
| US6771200B2 (en) * | 2003-04-03 | 2004-08-03 | Atmel Corporation | DAC-based voltage regulator for flash memory array |
| ITTO20020790A1 (it) * | 2002-09-11 | 2004-03-12 | Atmel Corp | Regolatore di tensione basato su un convertitore |
| US6753722B1 (en) * | 2003-01-30 | 2004-06-22 | Xilinx, Inc. | Method and apparatus for voltage regulation within an integrated circuit |
| US7395452B2 (en) * | 2004-09-24 | 2008-07-01 | Microsoft Corporation | Method and system for improved reliability in storage devices |
-
2006
- 2006-05-10 DE DE102006021746A patent/DE102006021746A1/de not_active Ceased
-
2007
- 2007-04-17 WO PCT/EP2007/053706 patent/WO2007128653A1/de not_active Ceased
- 2007-04-17 KR KR1020117017515A patent/KR20110099337A/ko not_active Ceased
- 2007-04-17 EP EP07728171A patent/EP2020005A1/de not_active Withdrawn
- 2007-04-17 US US12/227,096 patent/US7898874B2/en not_active Expired - Fee Related
- 2007-04-17 CN CN200780016658XA patent/CN101438350B/zh not_active Expired - Fee Related
- 2007-04-17 KR KR1020087027307A patent/KR20090033832A/ko not_active Ceased
- 2007-04-17 JP JP2009508297A patent/JP4891395B2/ja not_active Expired - Fee Related
Non-Patent Citations (1)
| Title |
|---|
| See references of WO2007128653A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101438350A (zh) | 2009-05-20 |
| CN101438350B (zh) | 2011-11-16 |
| KR20110099337A (ko) | 2011-09-07 |
| JP4891395B2 (ja) | 2012-03-07 |
| KR20090033832A (ko) | 2009-04-06 |
| DE102006021746A1 (de) | 2007-11-15 |
| JP2009536382A (ja) | 2009-10-08 |
| US7898874B2 (en) | 2011-03-01 |
| US20090213676A1 (en) | 2009-08-27 |
| WO2007128653A1 (de) | 2007-11-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| 17P | Request for examination filed |
Effective date: 20081210 |
|
| AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR |
|
| AX | Request for extension of the european patent |
Extension state: AL BA HR MK RS |
|
| 17Q | First examination report despatched |
Effective date: 20090323 |
|
| DAX | Request for extension of the european patent (deleted) | ||
| RBV | Designated contracting states (corrected) |
Designated state(s): DE ES FR GB HU IT |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
| 18D | Application deemed to be withdrawn |
Effective date: 20131031 |