EP1974369A4 - Procede de microminiaturisation d'une nanostructure - Google Patents

Procede de microminiaturisation d'une nanostructure

Info

Publication number
EP1974369A4
EP1974369A4 EP06851505A EP06851505A EP1974369A4 EP 1974369 A4 EP1974369 A4 EP 1974369A4 EP 06851505 A EP06851505 A EP 06851505A EP 06851505 A EP06851505 A EP 06851505A EP 1974369 A4 EP1974369 A4 EP 1974369A4
Authority
EP
European Patent Office
Prior art keywords
microminiaturizing
nano
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06851505A
Other languages
German (de)
English (en)
Other versions
EP1974369A2 (fr
Inventor
Ming-Nung Lin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of EP1974369A2 publication Critical patent/EP1974369A2/fr
Publication of EP1974369A4 publication Critical patent/EP1974369A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0075—Manufacture of substrate-free structures
    • B81C99/0085—Manufacture of substrate-free structures using moulds and master templates, e.g. for hot-embossing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/127—Quantum box structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Cereal-Derived Products (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Magnetic Record Carriers (AREA)
EP06851505A 2005-12-30 2006-12-28 Procede de microminiaturisation d'une nanostructure Withdrawn EP1974369A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US75461405P 2005-12-30 2005-12-30
US11/645,526 US8318520B2 (en) 2005-12-30 2006-12-27 Method of microminiaturizing a nano-structure
PCT/US2006/049394 WO2008002326A2 (fr) 2005-12-30 2006-12-28 procÉdÉ de microminiaturisation d'une nanostructure

Publications (2)

Publication Number Publication Date
EP1974369A2 EP1974369A2 (fr) 2008-10-01
EP1974369A4 true EP1974369A4 (fr) 2010-11-24

Family

ID=38233271

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06851505A Withdrawn EP1974369A4 (fr) 2005-12-30 2006-12-28 Procede de microminiaturisation d'une nanostructure

Country Status (6)

Country Link
US (1) US8318520B2 (fr)
EP (1) EP1974369A4 (fr)
JP (1) JP5372520B2 (fr)
KR (1) KR20080083692A (fr)
CN (1) CN101390193B (fr)
WO (1) WO2008002326A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100483613C (zh) * 2005-02-24 2009-04-29 鸿富锦精密工业（深圳）有限公司 量子点制作方法
TWI307677B (en) * 2006-07-18 2009-03-21 Applied Res Lab Method and device for fabricating nano-structure with patterned particle beam
US8349546B2 (en) * 2007-06-28 2013-01-08 Ming-Nung Lin Fabricating method of nano-ring structure by nano-lithography
JP5345078B2 (ja) * 2010-01-22 2013-11-20 公益財団法人神奈川科学技術アカデミー 脂質二重膜、それを形成するために用いられる自己支持性フィルム及びそれを具備するマイクロ流路デバイス
RU2495511C2 (ru) * 2011-09-02 2013-10-10 Федеральное государственное бюджетное учреждение " Петербургский институт ядерной физики им. Б.П. Константинова" Способ получения массивов наноколец
US9303310B2 (en) * 2013-10-15 2016-04-05 International Business Machines Corporation Nanofluidic sensor comprising spatially separated functional sensing components
US11174545B2 (en) 2019-11-06 2021-11-16 International Business Machines Corporation Oblique deposition for quantum device fabrication

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599790A (en) * 1985-01-30 1986-07-15 Texas Instruments Incorporated Process for forming a T-shaped gate structure
US5420067A (en) * 1990-09-28 1995-05-30 The United States Of America As Represented By The Secretary Of The Navy Method of fabricatring sub-half-micron trenches and holes
EP0703626A2 (fr) * 1994-09-20 1996-03-27 Texas Instruments Incorporated Structure à effet tunnel résonnant et des procédés de fabrication
WO2002019036A1 (fr) * 2000-08-31 2002-03-07 Unisearch Limited Fabrication de circuits nanoélectroniques
US20040127012A1 (en) * 2002-12-31 2004-07-01 Sungho Jin Method for fabricating spaced-apart nanostructures
US20050241933A1 (en) * 1999-06-22 2005-11-03 President And Fellows Of Harvard College Material deposition techniques for control of solid state aperture surface properties

Family Cites Families (21)

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Publication number Priority date Publication date Assignee Title
US3755704A (en) * 1970-02-06 1973-08-28 Stanford Research Inst Field emission cathode structures and devices utilizing such structures
US5225131A (en) * 1989-12-07 1993-07-06 Daikin Industries, Ltd. Process for producing multilayer polytetrafluoroethylene porous membrane and semisintered polytetrafluoroethylene multilayer structure
US5480843A (en) * 1994-02-10 1996-01-02 Samsung Display Devices Co., Ltd. Method for making a field emission device
US5621272A (en) * 1995-05-30 1997-04-15 Texas Instruments Incorporated Field emission device with over-etched gate dielectric
KR100339186B1 (ko) * 1998-09-28 2002-05-31 포만 제프리 엘 기판상에서 패턴을 규정하는 장치 및 방법
JP2000173444A (ja) * 1998-12-04 2000-06-23 Agency Of Ind Science & Technol 電界放出型冷陰極及びその製造方法
US6827979B2 (en) * 1999-01-07 2004-12-07 Northwestern University Methods utilizing scanning probe microscope tips and products therefor or produced thereby
US6656568B1 (en) * 1999-05-28 2003-12-02 The Regents Of The University Of Colorado Ordered arrays of nanoclusters
JP2001126609A (ja) * 1999-10-26 2001-05-11 Futaba Corp 電子放出素子及び蛍光発光型表示器
US6350623B1 (en) * 1999-10-29 2002-02-26 California Institute Of Technology Method of forming intermediate structures in porous substrates in which electrical and optical microdevices are fabricated and intermediate structures formed by the same
WO2001070873A2 (fr) * 2000-03-22 2001-09-27 University Of Massachusetts Matrices de cylindres nanometriques
SE516194C2 (sv) * 2000-04-18 2001-12-03 Obducat Ab Substrat för samt process vid tillverkning av strukturer
CN1251962C (zh) * 2000-07-18 2006-04-19 Lg电子株式会社 水平生长碳纳米管的方法和使用碳纳米管的场效应晶体管
US6872645B2 (en) * 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US7233101B2 (en) * 2002-12-31 2007-06-19 Samsung Electronics Co., Ltd. Substrate-supported array having steerable nanowires elements use in electron emitting devices
US6770353B1 (en) * 2003-01-13 2004-08-03 Hewlett-Packard Development Company, L.P. Co-deposited films with nano-columnar structures and formation process
US20050066897A1 (en) * 2003-09-29 2005-03-31 Seagate Technology Llc System, method and aperture for oblique deposition
US7351607B2 (en) * 2003-12-11 2008-04-01 Georgia Tech Research Corporation Large scale patterned growth of aligned one-dimensional nanostructures
US7749784B2 (en) * 2005-12-30 2010-07-06 Ming-Nung Lin Fabricating method of single electron transistor (SET) by employing nano-lithographical technology in the semiconductor process
US7859036B2 (en) * 2007-04-05 2010-12-28 Micron Technology, Inc. Memory devices having electrodes comprising nanowires, systems including same and methods of forming same
TWI414081B (zh) * 2007-06-29 2013-11-01 Ming Nung Lin 使用微影技術製備發光二極體之奈米量子點活性層的方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599790A (en) * 1985-01-30 1986-07-15 Texas Instruments Incorporated Process for forming a T-shaped gate structure
US5420067A (en) * 1990-09-28 1995-05-30 The United States Of America As Represented By The Secretary Of The Navy Method of fabricatring sub-half-micron trenches and holes
EP0703626A2 (fr) * 1994-09-20 1996-03-27 Texas Instruments Incorporated Structure à effet tunnel résonnant et des procédés de fabrication
US20050241933A1 (en) * 1999-06-22 2005-11-03 President And Fellows Of Harvard College Material deposition techniques for control of solid state aperture surface properties
WO2002019036A1 (fr) * 2000-08-31 2002-03-07 Unisearch Limited Fabrication de circuits nanoélectroniques
US20040127012A1 (en) * 2002-12-31 2004-07-01 Sungho Jin Method for fabricating spaced-apart nanostructures

Also Published As

Publication number Publication date
WO2008002326A2 (fr) 2008-01-03
US20070161238A1 (en) 2007-07-12
US8318520B2 (en) 2012-11-27
KR20080083692A (ko) 2008-09-18
JP2009522785A (ja) 2009-06-11
WO2008002326A3 (fr) 2008-05-15
EP1974369A2 (fr) 2008-10-01
CN101390193B (zh) 2011-03-16
JP5372520B2 (ja) 2013-12-18
CN101390193A (zh) 2009-03-18

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