EP1913646A1 - Materiau photonique comportant des cavites agencees de maniere reguliere - Google Patents

Materiau photonique comportant des cavites agencees de maniere reguliere

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Publication number
EP1913646A1
EP1913646A1 EP06776269A EP06776269A EP1913646A1 EP 1913646 A1 EP1913646 A1 EP 1913646A1 EP 06776269 A EP06776269 A EP 06776269A EP 06776269 A EP06776269 A EP 06776269A EP 1913646 A1 EP1913646 A1 EP 1913646A1
Authority
EP
European Patent Office
Prior art keywords
colorant
photonic material
photonic
material according
cavities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06776269A
Other languages
German (de)
English (en)
Inventor
Holger Winkler
Helmut Bechtel
Thomas Juestel
Joachim Opitz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Intellectual Property and Standards GmbH
Koninklijke Philips NV
Original Assignee
Merck Patent GmbH
Philips Intellectual Property and Standards GmbH
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH, Philips Intellectual Property and Standards GmbH, Koninklijke Philips Electronics NV filed Critical Merck Patent GmbH
Priority to EP06776269A priority Critical patent/EP1913646A1/fr
Publication of EP1913646A1 publication Critical patent/EP1913646A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
    • C09K11/7716—Chalcogenides
    • C09K11/7718—Chalcogenides with alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/7729—Chalcogenides
    • C09K11/7731—Chalcogenides with alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7767—Chalcogenides
    • C09K11/7769—Oxides
    • C09K11/7771—Oxysulfides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7784—Chalcogenides
    • C09K11/7787—Oxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7794—Vanadates; Chromates; Molybdates; Tungstates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249986—Void-containing component contains also a solid fiber or solid particle

Definitions

  • the invention relates to photonic materials, their use as a phosphor system in a lighting means, corresponding illumination means and manufacturing methods.
  • a first type of white light emitting lighting system using light emitting diodes is based on combinations of LEDs that emit visible light.
  • LEDs light emitting diodes
  • at least two LEDs e.g., blue and yellow
  • three LEDs e.g., red, blue, and green
  • the visible light of the different LEDs mixes to a whitish light ("digital white light").
  • the generation of white light of a desired hue by an array of red, green and blue LEDs is hardly possible because of long-term changes in the diodes in terms of hue, luminance and other factors.
  • Complex control electronics are needed to compensate for these differential aging effects and the color shifts of each LED.
  • Such white light illumination systems with converter phosphors are based in particular on two approaches: either on the trichromatic RGB approach, in which the colors red, green and blue wherein the blue component of the light emission can be generated by a phosphor and / or originate from the primary emission of an LED, or on a second, simpler solution, the dichromatic BY approach, in which the colors yellow and blue are mixed, the yellow component the light emission from a yellow light-emitting phosphor and the blue portion of a phosphor or the primary emission of a blue LED can originate.
  • This phosphor converter system is most commonly used.
  • a photonic structure for the emission of white light when excited by a LED comprising: a) a radiation emitting diode; b) an optically transparent matrix material which is arranged in the beam path of the light emitted by said diode; and c) nanocrystalline phosphors dispersed in said matrix material and emitting light upon excitation by radiation of the diode.
  • luminescent materials for such applications is difficult because there are only a few luminescent materials having an absorption spectrum in the near UV and in the blue portion of the electromagnetic spectrum that can efficiently convert said near-UV and blue light into visible colored or white light and are also long-term stable.
  • the known converters such as Y 2 O 3 : Eu, can not be used in the light-emitting diodes until now because their red emission can not be excited with the blue light of the indium-gallium nitride emitter.
  • a first subject of the present invention is therefore a photonic material having regularly arranged cavities containing at least one colorant, wherein the wall material of the photonic material has dielectric properties and as such acts substantially non-absorbing for the wavelength of an absorption band of the respective colorant and substantially transparent is for the wavelength of an excitable by the absorption wavelength Emission of the colorant and the cavities are designed so that radiation of the wavelength of the weak absorption band of the colorant is stored in the photonic material.
  • Photonic materials comprising arrays of cavities having a substantially monodisperse size distribution in the sense of the present invention are materials which have three-dimensional photonic structures.
  • three-dimensional photonic structures i. a. Systems understood that have a regular, three-dimensional modulation of the dielectric constant (and thereby also the refractive index). If the periodic modulation length corresponds approximately to the wavelength of the (visible) light, the structure interacts with the light in the manner of a three-dimensional diffraction grating, which manifests itself in angle-dependent color phenomena.
  • An advantage of such inverse structures over the normal structures is the emergence of photonic bandgaps at already much lower dielectric constant contrasts (Busch, K., et al., Phys Rev. Letters E, 198, 50, 3896).
  • Photonic materials having cavities must therefore have a solid wall.
  • suitable wall materials which have dielectric properties and as such are substantially non-absorbing for the wavelength of an absorption band of the respective colorant and are substantially transparent to the wavelength of an excitable by the absorption wavelength emission of the colorant. It is inventively preferred if the wall material of the photonic material as such, the radiation of the wavelength of the absorption band of the colorant to at least 95%, preferably at least 97% happen.
  • the matrix consists essentially of a radiation-stable organic polymer, which is preferably crosslinked, for example an epoxy resin.
  • the matrix around the cavities essentially consists of an inorganic material, preferably a metal chalcogenide or
  • Metallpnictid exist, in particular silica, alumina, zirconia, iron oxides, titanium dioxide, ceria, gallium nitride, boron and aluminum nitride and silicon and phosphorus nitride or mixtures thereof are mentioned. It is particularly preferred according to the invention if the wall of the photonic material consists essentially of a
  • Three-dimensional inverse structures d. H. Diffractive colorants with regular arrangements of cavities to be used according to the invention can be prepared, for example, by a template synthesis:
  • the hollow volumes between the balls are filled by utilizing capillary effects with a gaseous or liquid precursor or a solution of a precursor.
  • SiO 2 balls can be arranged in a densest packing, filling the hollow volumes with solutions containing tetraethyl orthotitanate. After several tempering steps, the balls are removed in an etching process with HF, leaving the inverse structure of titanium dioxide (V. Colvin et al., Adv., Mater., 2001, 13, 180).
  • De La Rue et al. (De La Rue et al., Synth. Metals, 2001, 116, 469) describe the preparation of inverse opal TiO 2 according to the following methodology: A dispersion of 400 nm polystyrene beads is dried on a filter paper under an IR lamp. The filter cake is aspirated with ethanol, transferred to a glovebox and infiltrated by means of a water jet pump with tetraethyl orthotitanate. Carefully remove the filter paper from the latex-ethoxide composite and transfer the composite to a tube furnace. In the tube furnace takes place at 575 ° C, the 8 h lasting calcination in an air flow, which is formed from the ethoxide titanium dioxide and the latex particles are burned out. An inverse opal structure of TiO 2 remains.
  • Martinelli et al. (Martinelli, M., et al., Optical Mater., 2001, 17, 11) describe the preparation of inverse TiO 2 opals using 780 nm and 3190 nm polystyrene spheres. Regular placement in a densest packed sphere is achieved by centrifuging the aqueous dispersion of spheres at 700-1000 rpm for 24-48 hours followed by decantation, followed by air drying. The regularly arranged balls are moistened with ethanol on a filter on a Buchner funnel and then provided dropwise with an ethanolic solution of tetraethyl orthotitanate.
  • the sample After infiltrating the Titanate solution, the sample is dried in a vacuum desiccator for 4 to 12 hours. This filling procedure is repeated 4 to 5 times. The polystyrene beads are then burned out at 600 0 C - 800 0 C for 8 - 10 hours.
  • Stein et al. (A. Stein et al., Science, 1998, 281, 538) describe the synthesis of inverse TiO 2 opals starting from polystyrene spheres of a diameter of 470 nm as a template. These are produced in a 28-hour process, subjected to centrifugation and air dried. Thereafter, the latices template are applied to a filter paper. Ethanol is drawn into the latex template via a Buchner funnel attached to a vacuum pump. This is followed by dropwise addition of tetraethyl orthotitanate under suction. After drying in a vacuum desiccator for 24 h, the latices at 575 0 C for 12 h to be burnt out in the air stream.
  • Vos et al. (WL Vos et al., Science, 1998, 281, 802) represent inverse TiO 2 -
  • a sedimentation technique is used which is supported by centrifugation for up to 48 hours. After slow evacuation to dry the template structure, it is treated in a glovebox with an ethanolic solution of tetra-n-propoxy-orthotitanate. After about 1 h, the infiltrated material is brought to the air to allow the precursor to react to TiO 2 . This procedure is repeated eight times to ensure complete filling with TiO 2 . Thereafter, the material is calcined at 450 0 C.
  • Core-shell particles whose shell forms a matrix and whose core is substantially solid and has a substantially monodisperse size distribution are described in German Patent Application DE-A-10145450.
  • the use of such core-shell particles, whose shell forms a matrix and whose core is substantially solid and has a substantially monodisperse size distribution as a template for the preparation of inverse opal structures and a method for producing inverse opal-like structures using such core-shell particles is in the International Patent Application
  • the described moldings having homogeneous, regularly arranged cavities preferably have walls of metal oxides or of elastomers. Consequently, the moldings described are either hard and brittle or exhibit elastomeric character.
  • the removal of the regularly arranged template cores can be done in different ways. If the cores are made of suitable inorganic materials, they can be removed by etching. Preferably, for example, silicon dioxide cores can be removed with HF, in particular dilute HF solution. In this procedure, it may again be preferred if a crosslinking of the wall material takes place before or after the removal of the cores.
  • the cores in the core-shell particles are composed of a UV-degradable material, preferably a UV-degradable organic polymer
  • the nuclei are removed by UV irradiation. With this procedure, too, it may again be preferred if crosslinking of the jacket takes place before or after the removal of the cores. Suitable core materials are then in particular
  • the degradable core is thermally degradable and consists of polymers which are either thermally depolymerizable, ie disintegrate under the effect of temperature in their monomers or the core consists of polymers which during degradation into low molecular components that are different from the monomers.
  • Suitable polymers can be found, for example, in the "Thermal Degradation of Polymers" table in Brandrup, J. (Ed.): Polymer Handbook Chichester Wiley 1966, pp. V-6 - V-10, where all polymers are volatile The content of this table belongs expressly to the disclosure of the present application.
  • Suitable thermally degradable polymers are in particular
  • poly (styrene) and derivatives such as poly ( ⁇ -methylstyrene) or poly (styrene) derivatives, which carry substituents on the aromatic ring, in particular partially or perfluorinated derivatives,
  • Poly (acrylate) and poly (methacrylate) derivatives and their esters particularly preferably poly (methyl methacrylate) or poly (cyclohexyl methacrylate), or copolymers of these polymers with other degradable polymers, such as preferably styrene-ethyl acrylate
  • Cellulose and derivatives such as oxidized cellulose and cellulose triacetate, polyketones, e.g. Poly (methyl isopropenyl ketone) or
  • Polyolefins e.g. Polyethylene and polypropylene, polyisisoprene, polyolefin oxides, such as. Polyethylene oxide or polypropylene oxide, polyethylene terephthalate, polyformaldehyde, polyamides such as nylon 6 and nylon 66, polyperfluoroglucarodiamidine, plolperfluoropolyolefins such as
  • Derivatives such as poly ( ⁇ -methylstyrene) or poly (styrene) derivatives, the aromatic ring substituents, such as in particular partially or perfluorinated derivatives, poly (acrylate) - and poly (methacrylate) derivatives and their esters, particularly preferably poly (methyl methacrylate) or poly (cyclohexylmethacrylat), or copolymers of these polymers with other degradable polymers , such as preferably styrene-ethyl acrylate
  • Copolymers or methyl methacrylate-ethyl acrylate copolymers and polyolefins, polyolefin oxides, polyethylene terephthalate, polyformaldehyde, polyamides, polyvinyl acetate, polyvinyl chloride or polyvinyl alcohol.
  • Diameter of the cavities in the photonic material in the range of about 200 - 400 nm, preferably in the range of 250 - 380 nm.
  • the shaped bodies of the inverse opal are obtained in the corresponding process either directly in powder form or can be comminuted by grinding. The resulting particles can then be further processed in accordance with the invention.
  • the colorant or phosphor according to the invention is preferably nanoscale phosphor particles.
  • the colorants are chemically usually composed of a host material and one or more dopants.
  • the host material compounds from the group of sulfides, selenides, sulfoselenides, oxysulfides, borates,
  • the host materials are alkali, alkaline earth or rare earth compounds.
  • the colorant is preferably present in nanoparticulate form.
  • Preferred particles show an average particle size of less than 50 nm, determined as the hydraulic diameter by means of dynamic light scattering, and it is particularly preferred if the mean particle diameter is less than 25 nm.
  • the light of blue light sources should be supplemented by red components.
  • the colorant in a preferred embodiment of the present invention is an emitter for radiation in the range of 550 to 700 nm.
  • the preferred dopants include in particular with europium,
  • one or more elements are contained in an amount
  • a coordinated dopant pair for example cerium and terbium, may preferably be used with good energy transfer, if necessary per desired fluorescence color, one acting as an energy absorber, in particular as a UV light absorber and the other as a fluorescence light emitter.
  • the following compounds can be selected as the material for the doped nanoparticles, in the following notation to the left of Colon the host compound and to the right of the colon one or more dopants are listed.
  • chemical elements are separated and bracketed by commas, they can optionally be used.
  • a first selection list is defined as follows, it being possible, depending on the desired fluorescence property of the nanoparticles, to use one or more of the compounds selected for selection:
  • LiIiEu; NaLTI; CsLTI; CsLNa; LiF: Mg; LiFiMg 1 Ti; LiFiMg 1 Na; KMgF 3 IMn; Al 2 O 3 IEu; BaFCIiEu; BaFCIiSm; BaFBnEu; BaFCIo, 5 Br o , 5 : Sm; BaY 2 F 8 IA (A
  • YAI 3 (BO 4 ) 3 Nd, Yb; (Y, Ga) BO 3: Eu; (Y, Gd) BO 3 : Eu; Y 2 Al 3 Ga 2 O 12 Tb;
  • a second selection list is defined as follows: YVO 4 : Eu; YVO 4 : Sm; YVO 4 : Dy; LaPO 4 : Eu; LaPO 4 : Ce; LaPO 4 : Ce, Tb; ZnS: Tb; ZnSTbF 3 ; ZnS: Eu; ZnSiEuF 3 ; Y 2 O 3 : Eu; Y 2 O 2 S: Eu; Y 2 SiO 5 : Eu; SiO 2 Oy; SiO 2 : Al; Y 2 O 3 Tb; CdS: Mn; ZnSTb; ZnS: Ag; ZnS: Cu; Ca 3 (PO 4 ) 2 : Eu 2+ ; Ca 3 (PO 4 ) 2 : Eu 2+ , Mn 2+ ; Sr 2 SiO 4 : Eu 2+ ; or BaAl 2 O 4 : Eu 2+
  • a third selection list for the doped nanoparticles is defined as follows: MgF 2 : Mn; ZnS: Mn; ZnS: Ag; ZnS: Cu; CaSiO 3 : Ln; CaS: Ln; CaO: Ln; ZnS: Ln; Y 2 O 3 : Ln or MgF 2 : l_n, where Ln is an element of lanthanides.
  • Such colorants are either commercially available or can be obtained by known from the literature preparation process.
  • Preferred production methods to be used are described in particular in International Patent Applications WO 2002/20696 and WO 2004/096714, whose corresponding disclosure expressly belongs to the disclosure content of the present invention.
  • the colorant can be introduced according to the invention in various ways in the cavity structure: According to the invention, preference is given to a method for producing a photonic material having regularly arranged cavities containing at least one colorant, which is characterized in that a) template spheres are arranged regularly, b) the spherical interspaces are impregnated with a precursor for the wall material, c ) the wall material is formed and the template balls are removed.
  • the colorant is contained in the cavities of the photonic structure.
  • the cavities of the photonic material are filled with at least 1% by volume and at most 50% by volume with the at least one colorant, with the cavities particularly preferably at least 5% by volume and at most 30 vol .-% are filled with the at least one colorant.
  • the at least one colorant accounts for 5 to 75% by weight of the photonic material, the at least one colorant preferably containing 25 to 66% by weight. % of the photonic material.
  • the colorant can be introduced in a preferred process variant after removal of the template spheres in the cavities. This is achieved for example by the fact that the photonic material with regularly arranged cavities with a colorant dispersion or a dispersion of colorant precursors is infiltrated and the dispersant is then removed.
  • the nanoscale colorants can be infiltrated into the inverse opals described above if the particle size of the colorant particles is less than the diameter of the openings between the cavities of the inverse opals.
  • the nanoscale phosphor particles are present in a liquid, preferably water or another volatile solvent, dispersed in a substantially agglomerate-free manner before infiltration.
  • the colorant dispersion is added to the inverse opal material and the suspension is evacuated to remove the air trapped in the cavities of the inverse opal. Then the suspension is aerated to completely fill the cavities with the nanophosphorus suspension. The infiltrated particles are separated by a membrane filter from the excess nanophosphorus suspension and washed.
  • At least one colorant or colorant precursor is introduced into the template spheres before step a). In the decomposition of the precursor cores, the colorant particles then remain in the resulting cavities. In this process variant, the size of the colorant particles is limited only by the size of the template beads.
  • the colorant is present in the wall of the photonic material.
  • the colorant particles are either dispersed in the precursor preparation or a colorant dispersion is mixed with the precursor preparation before or during impregnation of the cavities of the template structure.
  • the use of at least one photonic material according to the invention as a phosphor system in a lighting means is a further subject of the present invention.
  • the photonic material can be used particularly advantageously for widening the spectrum of a luminous means and thus in particular for producing white light.
  • An important aspect of the invention in this context is the use of at least one photonic material according to the invention for enhancing the emission of at least one colorant.
  • europium-doped yttrium vanadate alone can not be used to add red to the blue light emitted by AHnGaN emitters, since the absorption of blue light is insufficient to excite the red emission.
  • the photonic material according to the invention containing europium-doped yttrium vanadate the emission can be enhanced, as explained in more detail in the examples.
  • a further subject of the present invention is an illumination means comprising at least one light source, which is characterized in that it contains at least one photonic material according to the invention.
  • the illumination means in preferred embodiments of the present invention is a light emitting diode (LED), a organic light emitting diode (OLED) 1 a polymeric light emitting diode (PLED) or a fluorescent lamp.
  • LED light emitting diode
  • OLED organic light emitting diode
  • PLED polymeric light emitting diode
  • Wavelength range of 250 to 500 nm is stored in the photonic material, wherein the radiation is preferably selected from the wavelength range of 380 to 480 nm.
  • GaN GaN
  • These nitride semiconductor materials also include substances such as
  • Indium gallium nitride and GaN These semiconductor materials may be doped with traces of other substances, for example to increase the intensity or readjust the color of the emitted light.
  • Laser diodes (LDs) are similarly constructed of an array of GaN layers. Fabrication methods for LEDs and LDs are well known to those skilled in the art.
  • a photonic structure can be coupled to a light emitting diode or an array of light emitting diodes are in a support frame or surface mounted LEDs.
  • Such photonic structures are useful in all configurations of lighting systems that include a primary radiation source, including, but not limited to, discharge lamps, fluorescent lamps, LEDs, LDs (laser diodes), OLEDs, and x-ray tubes.
  • a primary radiation source including, but not limited to, discharge lamps, fluorescent lamps, LEDs, LDs (laser diodes), OLEDs, and x-ray tubes.
  • Lighting system described in detail which includes a radiation source and a phosphor (see Fig. 3).
  • the phosphor is a photonic material according to the invention or a phosphor mixture containing a photonic material according to the invention.
  • Figure 3 shows schematically the appearance of a chip-like light emitting diode whose coating contains the phosphor.
  • the invention comprises a chip-type light emitting diode 1 as a radiation source.
  • the LED chip is mounted in a cup-shaped reflector by a
  • Adjustment frame is held.
  • the chip 1 is connected by a wire 7 to a contact 6 and directly to a second electrical contact 6 '.
  • a coating was applied which contains a phosphor according to the invention.
  • the phosphors can be used either separately or as a mixture.
  • the coating typically comprises a polymer for inclusion of the phosphor or phosphor mixture of the invention. This should be realized in such a way that the phosphor or the phosphor mixture is very stable against the containment agent.
  • the polymer is optically clear to prevent appreciable light scattering. In the LED industry, some polymers suitable for the production of LED lighting systems are known.
  • the polymer is selected from a group of epoxy and silicone resins.
  • inclusion can be achieved.
  • the phosphor mixture may be a granulated powder.
  • a suspension is formed.
  • the phosphor mixture is spatially fixed by the inclusion material.
  • both the phosphor and the LED cube are enclosed by the polymer.
  • the transparent coating may comprise light-scattering particles, advantageously so-called diffusers.
  • diffusers are mineral fillers, especially CaF 2 , TiO 2 , SiO 2 , CaCO 3 or BaSO 4 or organic pigments. These substances can be easily added to the mentioned resins.
  • the cube is supplied with electrical energy for activation.
  • the cube emits primary light, e.g. Blue light. Part of this emitted primary light is partially or completely absorbed by the phosphor in the coating.
  • the phosphor then emits converted secondary light, ie light with a longer-wave emission maximum, especially amber, with a sufficiently broad emission band (especially with a significant proportion of red).
  • the unabsorbed radiation portion of the emitted primary light passes through the luminescent layer and leaves it together with the secondary light.
  • the confinement material roughly aligns the unabsorbed primary light and the secondary light so that the resulting radiation can exit the device.
  • the resulting radiation is therefore composed of the primary light emitted by the cube and the secondary light emitted by the luminescent layer.
  • the color temperature or the color value of the resulting light of an illumination system according to the invention depends on the spectral Distribution and intensity of the secondary light compared with the primary light.
  • the color temperature or color value of the primary light can be varied by choosing a suitable light emitting diode.
  • the color temperature or color value of the secondary light can be varied by choosing a suitable, specific phosphor mixture in the photonic structure.
  • a green phosphor may be required to obtain a light source whose emission is perceived by an observer to be white.
  • a second phosphor can be added.
  • a resin-fixed luminescent pigment may be added.
  • Light emitting diodes are often applied to insulating substrates such as sapphire, and both contacts are on the same side of the
  • the components can then be mounted so that the light leaves the component either through the contacts (epitaxy-up construction) or through the surface opposite the contacts (flip-chip design).
  • the wavelength of a portion of the light emitted by the light emitting diode is modified by the photonic structure, the remainder of the emitted light being superimposed with the wavelength converted light to white or colored light.
  • the light emitted by an illumination system comprising a radiation source, preferably a light-emitting diode, and a photonic material according to the invention may have a spectral distribution which makes it appear as white light.
  • the most popular conventional LEDs with converter phosphor and white emission consist of a blue light emitting LED chip coated with a phosphor which converts a portion of the blue light into complementary color light, eg, a yellow to amber emission. Together, the emitted blue and yellow light provide white light.
  • White light emitting LEDs containing a UV light emitting chip and phosphors that convert the UV radiation to visible light are also known.
  • the UV light emitting chip and phosphors that convert the UV radiation to visible light are also known.
  • Overlay emission bands of two or more phosphors to generate white light are overlap emission bands of two or more phosphors to generate white light.
  • part of the blue primary light emitted by the LED passes through the photonic structure without encountering phosphor particles. Another part of the blue primary radiation emitted by the LED strikes the activator ions of the photonic structure, which then emit red light. The wavelength of part of the 460 nm emission of an AlInGaN LED is therefore shifted into the red spectral range.
  • part of the 460 nm emission of an AlInGaN LED is therefore shifted into the red spectral range.
  • a second embodiment according to the invention of a white light-emitting system with even better color mixing comprises a blue-emitting LED and an amber-colored and red-emitting photonic structure together with a second phosphor as additional luminescence converter, preferably a broadband green emitter.
  • the following table shows some useful additional phosphors and their optical properties.
  • the color values x and y are the color coordinates according to the standard color chart "CIE diagram 1931".
  • the light emitted by the illumination system comprising a radiation source and a photonic structure with amber to red emission may have a spectral distribution making it appear as amber and red light.
  • the emission color of an LED system depends strongly on the thickness of the photonic structure. At high thickness, only a minor portion of the blue primary emission of the LED can pass through the photonic structure. The emission of the entire system will then appear amber and red, because the yellow and red color of the secondary light dominates the photonic structure. The thickness of the photonic structure is therefore a critical parameter for the color impression of the total emission.
  • a photonic structure comprising one of the colorants described above is particularly suitable as a yellow and red component which is stimulated by the blue primary radiation of a light source, eg a blue emitting light emitting diode. Therefore, light emitting devices with color conversion phosphors are available which emit in the yellow and red regions of the electromagnetic spectrum.
  • monodisperse PMMA nanospheres are produced. This is done by means of an emulsifier-free, aqueous emulsion polymerization.
  • the filter cake is deionized with 10 ml of a precursor solution consisting of 3 ml of ethanol, 4 ml of tetraethoxysilane, 0.7 ml of concentrated HCl in 2 ml
  • the filter cake is dried for 1 h and then calcined in air in a corundum container in a tube furnace.
  • the calcination is carried out according to the following temperature ramps: a) keep in 2h from RT to 100 0 C temperature, 2 h at 100 0 C. b) in 4h from 100 0 C to 35O 0 C temperature, 2 h at 35O 0 C. c) in 3h from 35O 0 C to 55O 0 C temperature. d) the material is treated for a further 14 days at 55O 0 C, then e) at 10 ° C / min of 55O 0 C to RT (in 1 h from 550 ° C to RT) cooled.
  • the resulting inverse opal powder has an average pore diameter of about 300 nm (see Fig. 1).
  • the powder particles of the inverse opal have an irregular shape with a spherical equivalent diameter of 100 to 300 ⁇ m.
  • the cavities have a diameter of 300 nm and are interconnected by 60 nm openings.
  • Example 2 Infiltration of nanoscale phosphor particles into a photonic cavity structure
  • Example 2a Infiltration of Y 2 O 3 IEu into a photonic cavity structure with SiO 2 wall
  • the suspension is aerated to completely fill the cavities with the nanophosphorus suspension.
  • the infiltrated particles are separated from the excess nanophosphor suspension via a membrane filter with a pore diameter of 5 ⁇ m and washed several times with several milliliters of water on the filter.
  • the washed inverse particles are gently dried and then dried at 6O 0 C until at 15O 0 C to the trapped in the cavities to remove water completely.
  • An inverse opal powder containing 3.8% by weight of nanoscale Y 2 O 3 ⁇ U phosphor particles, which are distributed in the cavities of the inverse opal, is obtained.
  • Example 2b Infiltration of YVO 4 : Eu into a photonic cavity structure with SiO 2 wall
  • FIG. 2 shows the excitation spectrum of YVO 4 : Eu in an Aerosil matrix
  • the lower intensity of the "reference" curve occurs at wavelengths in the range greater than 350 nm. It is believed that the sample consisting of phosphor in the inverse opal matrix here exhibits the higher photoluminescence intensity because the excitation light is in resonance with the inverse opal, i. whose wavelength corresponds to the stop bands of the inverse opal.
  • Example 2c Multiple Infiltration of YVO 4 : Eu
  • Milliliters of water washed on the filter.
  • the washed inverse Opal pieces are first gently dried at 60 0 C and then dried at 150 0 C to completely remove the trapped in the cavities of the inverse Opals water.
  • the thus-dried inverse opal pieces are added twice more with YVO 4 : Eu Phosphor suspension and worked up twice according to the method described above. Thereby, the concentration of nanophosphors in the cavities of the inverse opal can be increased to 20.3 wt% YVO 4 : Eu.
  • Example 3a Preparation of a Y 2 O 3 : Eu coating
  • solution A A solution of 7,582 g of YCl 3 ⁇ 6H 2 O and 0.549 g of EuCl 3 ⁇ 6H 2 O in 11 distilled water is prepared (solution A).
  • solution B 1.8 g of urea are dissolved (solution B).
  • 40 g of a cavity structure of Example 1 are impregnated with solution B and heated in a closed vessel for 2 h at 95 0 C.
  • the coated inverse opal is then added to a filter and dest. Washed water chloride-free and dried at 100 0 C.
  • the powder is calcined in a vacuum oven at 400-700 0 C for 2 h.
  • solution A A solution of 9,290 g of GdCl 3 * 6H 2 O and 0.010 g of TbCl 3 * 6H 2 O in 11 distilled water is prepared (solution A). In 50 ml of solution A, 1.8 g of urea are dissolved (solution B). Then 40 g of an inv.
  • Example 1 Opals from Example 1 impregnated with solution B and heated in a closed vessel for 2 h at 95 0 C. The coated inverse opal is then placed on a filter and dest. Washed water chloride-free and dried at 100 ° C. The powder is then heated at 750 ° C. for 4 hours in a sulfur-saturated argon atmosphere.
  • Example 3d Preparation of a SrGa 2 S 4 : Eu coating
  • a precursor solution 100 ml of a precursor solution are prepared by mixing 80 g of ethanol, 10 g of tetraethoxysilane and 10 g of 2 molar aqueous hydrochloric acid (solution A). The solution is stirred at room temperature overnight. A suspension of nanoscale Y 2 O 3 : Eu phosphor particles in water is diluted to a concentration of 20 mg / ml (solution B). 9 ml of Precursor Solution A and 1 ml of Nanophosphor Suspension B are mixed. According to Example 1 PMMA spheres are used as a template for the production of the photonic structure. For this purpose, 10 g of dried PMMA balls are slurried in deionized water and filtered with suction through a Buchner funnel.
  • PMMA Opal PMMA Opal
  • a few drops of the nanophosphorus precursor solution (A + B) are applied to the PMMA opal deposited on the membrane filter. It is added dropwise just as much of the nanophosphorus precursor solution that the pore structure of the opal is completely filled. Then, the infiltrated latex opal is dried on the membrane filter in an oven at 5O 0 C, and hydrolyzed at 8O 0 C and cross-links the pre-hydrolyzed tetraethoxysilane completely.
  • the infiltration with nanophosphorus-containing precursor solution and the subsequent drying is repeated several times until the latex opal is completely filled and no more solution takes up.
  • the completely filled opal is slowly heated up to a final temperature of 600 0 C program listed below.
  • the hydrolyzed silane is converted into SiO 2 and the PMMA particles are completely removed by pyrolysis.
  • An inverse opal powder of SiO 2 is obtained .
  • the SiO 2 structure contains about 5% by weight of nanoscale Y 2 O 3 : Eu
  • Calcination program a) keep at RT for 2 h from RT to 100 0 C temperature, at 100 ° C for 2 h. b) in 4h from 100 ° C to 350 0 C temperature, 2 h at 35O 0 C hold. c think of 35O 0 C to 600 ° C temperature, 14 days at 600 ° C in 3h) / cool down e) 10 ° C min of 600 ° C to RT (over 1 h from 600 0 C to RT).
  • Example 5 Light-emitting diode containing a photonic cavity structure
  • a formulation of a rare earth phosphor in inverse opal (according to at least one of Examples 2-4) is ground to a small size (3-20 ⁇ m grain size) and mixed with YAG: Ce (3-20 ⁇ m grain size) in silicone or epoxy resin. This phosphor formulation will be described in detail below.
  • the phosphor formulation is filled in the reflector funnel, in which the AlInGaN chip is located (FIG. 3), or
  • the phosphor formulation is introduced into the mass of which the lens (filament of the LED) consists, so that during manufacture of the lens it is homogeneously filled with the phosphor formulation, or
  • FIG. 1 shows an SEM image of the photonic cavity structure according to Example 1.
  • the photoluminescence in au is plotted on the y-axis. The samples were chosen so that the phosphor concentration is the same in each case.
  • FIG. 3 shows the schematic illustration of a light-emitting diode with a light-emitting diode
  • the component comprises a chip-type light-emitting diode (LED) 1 as a radiation source.
  • the light-emitting diode is mounted in a cup-shaped reflector, which is held by a Justagerahmen 2.
  • the chip 1 is connected via a flat cable 7 with a first contact 6 and directly with a second electrical contact

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Abstract

L'invention concerne des matériaux photoniques comportant des cavités agencées de manière régulière, renfermant au moins un agent colorant. Selon l'invention, le matériau de paroi dudit matériau photonique présente des propriétés diélectriques. Ainsi, il n'absorbe sensiblement pas la longueur d'onde d'une bande d'absorption de l'agent colorant respectif, et est sensiblement transparent à la longueur d'onde d'une émission de l'agent colorant, qui peut être induite par la longueur d'onde d'absorption. En outre, les cavités sont configurées de manière que le rayonnement de la longueur d'onde de la bande d'absorption faible de l'agent colorant soit stockée dans ledit matériau photonique. Cette invention concerne également l'utilisation de ces matériaux photoniques en tant que systèmes de substance lumineuse dans un moyen d'éclairage, des moyens d'éclairage correspondants, et des procédés de production.
EP06776269A 2005-08-11 2006-07-17 Materiau photonique comportant des cavites agencees de maniere reguliere Withdrawn EP1913646A1 (fr)

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