EP1910586A1 - Hochporöse schichten aus mof-materialien und verfahren zur herstellung derartiger schichten - Google Patents
Hochporöse schichten aus mof-materialien und verfahren zur herstellung derartiger schichtenInfo
- Publication number
- EP1910586A1 EP1910586A1 EP06776396A EP06776396A EP1910586A1 EP 1910586 A1 EP1910586 A1 EP 1910586A1 EP 06776396 A EP06776396 A EP 06776396A EP 06776396 A EP06776396 A EP 06776396A EP 1910586 A1 EP1910586 A1 EP 1910586A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- mof
- group
- metal
- layer
- substrate surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 239000000463 material Substances 0.000 title description 8
- 150000001875 compounds Chemical class 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 106
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 53
- 239000002131 composite material Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 133
- 239000002184 metal Substances 0.000 claims description 133
- 238000000034 method Methods 0.000 claims description 40
- 125000004432 carbon atom Chemical group C* 0.000 claims description 33
- 125000005647 linker group Chemical group 0.000 claims description 28
- 125000006850 spacer group Chemical group 0.000 claims description 17
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 125000000217 alkyl group Chemical group 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 8
- 125000004076 pyridyl group Chemical group 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 125000003342 alkenyl group Chemical group 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 125000003277 amino group Chemical group 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical group NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical group 0.000 claims 1
- 239000012621 metal-organic framework Substances 0.000 description 142
- 239000010410 layer Substances 0.000 description 100
- 239000000243 solution Substances 0.000 description 37
- 125000004429 atom Chemical group 0.000 description 23
- 239000002243 precursor Substances 0.000 description 19
- 239000003054 catalyst Substances 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 18
- 239000013132 MOF-5 Substances 0.000 description 16
- 229910052799 carbon Inorganic materials 0.000 description 15
- 239000010931 gold Substances 0.000 description 15
- 239000002904 solvent Substances 0.000 description 13
- 239000011701 zinc Substances 0.000 description 13
- 125000000962 organic group Chemical group 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 10
- 230000005855 radiation Effects 0.000 description 10
- -1 zinc carboxylates Chemical class 0.000 description 10
- 239000011148 porous material Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 125000003118 aryl group Chemical group 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 229910052717 sulfur Inorganic materials 0.000 description 7
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 6
- 230000004913 activation Effects 0.000 description 6
- 150000001721 carbon Chemical group 0.000 description 6
- 239000003446 ligand Substances 0.000 description 6
- 150000003254 radicals Chemical class 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 150000004678 hydrides Chemical group 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- 125000001931 aliphatic group Chemical group 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 125000005842 heteroatom Chemical group 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000011068 loading method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 125000002524 organometallic group Chemical group 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 239000011593 sulfur Substances 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000002879 Lewis base Substances 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 150000007527 lewis bases Chemical class 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 150000002902 organometallic compounds Chemical class 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000000634 powder X-ray diffraction Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- INOAASCWQMFJQA-UHFFFAOYSA-N 16-sulfanylhexadecanoic acid Chemical compound OC(=O)CCCCCCCCCCCCCCCS INOAASCWQMFJQA-UHFFFAOYSA-N 0.000 description 2
- OYFRNYNHAZOYNF-UHFFFAOYSA-N 2,5-dihydroxyterephthalic acid Chemical compound OC(=O)C1=CC(O)=C(C(O)=O)C=C1O OYFRNYNHAZOYNF-UHFFFAOYSA-N 0.000 description 2
- HPYIUKIBUJFXII-UHFFFAOYSA-N Cyclopentadienyl radical Chemical compound [CH]1C=CC=C1 HPYIUKIBUJFXII-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000012922 MOF pore Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- UJMDYLWCYJJYMO-UHFFFAOYSA-N benzene-1,2,3-tricarboxylic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1C(O)=O UJMDYLWCYJJYMO-UHFFFAOYSA-N 0.000 description 2
- QMKYBPDZANOJGF-UHFFFAOYSA-N benzene-1,3,5-tricarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=CC(C(O)=O)=C1 QMKYBPDZANOJGF-UHFFFAOYSA-N 0.000 description 2
- 239000012620 biological material Substances 0.000 description 2
- 239000012876 carrier material Substances 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 229920001795 coordination polymer Polymers 0.000 description 2
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000011534 incubation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000013110 organic ligand Substances 0.000 description 2
- 150000002941 palladium compounds Chemical class 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000550 scanning electron microscopy energy dispersive X-ray spectroscopy Methods 0.000 description 2
- 238000010561 standard procedure Methods 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- MFISPHKHJHQREG-UHFFFAOYSA-N trichloro(oct-7-enyl)silane Chemical compound Cl[Si](Cl)(Cl)CCCCCCC=C MFISPHKHJHQREG-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- MWVTWFVJZLCBMC-UHFFFAOYSA-N 4,4'-bipyridine Chemical group C1=NC=CC(C=2C=CN=CC=2)=C1 MWVTWFVJZLCBMC-UHFFFAOYSA-N 0.000 description 1
- KVQMUHHSWICEIH-UHFFFAOYSA-N 6-(5-carboxypyridin-2-yl)pyridine-3-carboxylic acid Chemical compound N1=CC(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C=N1 KVQMUHHSWICEIH-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 1
- 239000012923 MOF film Substances 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- 239000013236 Zn4O(BTB)2 Substances 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 238000006735 epoxidation reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 150000004675 formic acid derivatives Chemical class 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002638 heterogeneous catalyst Substances 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002527 isonitriles Chemical class 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000001455 metallic ions Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- PYLWMHQQBFSUBP-UHFFFAOYSA-N monofluorobenzene Chemical compound FC1=CC=CC=C1 PYLWMHQQBFSUBP-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- NQLVQOSNDJXLKG-UHFFFAOYSA-N prosulfocarb Chemical compound CCCN(CCC)C(=O)SCC1=CC=CC=C1 NQLVQOSNDJXLKG-UHFFFAOYSA-N 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002444 silanisation Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
- B01J20/22—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising organic material
- B01J20/223—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising organic material containing metals, e.g. organo-metallic compounds, coordination complexes
- B01J20/226—Coordination polymers, e.g. metal-organic frameworks [MOF], zeolitic imidazolate frameworks [ZIF]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
- B01J20/30—Processes for preparing, regenerating, or reactivating
- B01J20/32—Impregnating or coating ; Solid sorbent compositions obtained from processes involving impregnating or coating
- B01J20/3231—Impregnating or coating ; Solid sorbent compositions obtained from processes involving impregnating or coating characterised by the coating or impregnating layer
- B01J20/3242—Layers with a functional group, e.g. an affinity material, a ligand, a reactant or a complexing group
- B01J20/3244—Non-macromolecular compounds
- B01J20/3265—Non-macromolecular compounds with an organic functional group containing a metal, e.g. a metal affinity ligand
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
Definitions
- the invention relates to a method for producing highly porous layers and to a composite of a substrate and a highly porous layer applied to at least portions of a substrate surface of the substrate.
- Organometallic coordination polymer compounds are of interest for a variety of technical applications.
- these compounds can be used as catalysts or as a carrier material for heterogeneous catalysts since, because of their high specific surface area and the finely divided distribution of the catalyst, they can be expected to have very high activities.
- a particularly interesting class of substances are the classes of highly porous basic zinc carboxylates recently developed by Omar M. Yagi and co-workers (OM Yaghi, M. O'Keeffe, NW Ockwig, HK Chae, M. Eddaoudi, J.
- MOF-5 Zn 4 O units are linked via terephthalate bridges to form a zeolite-like cubic space network
- MOF compounds Metal Organic Framework
- They are characterized by the fact that metal atoms or metal ions are connected via at least bidentate ligands, resulting in three-dimensional regular structures.
- the resulting networks have a crystal-like structure with regularly recurring structural elements. They include cavities that are largely determined by the length of the bidentate ligands, hereinafter referred to as "linker molecules”.
- MOF compounds have extremely high specific surface areas of up to 4500 m 2 / g and pore volumes of extremely high, for example up to 0.69 cmVcm 3 in the case of MOF-177 to that of any other known crystalline substance are surpassed. At the same time, these compounds have a relatively high thermal stability and at temperatures of, for example, 350 ° C., no significant decomposition. These unique properties make the class of MOF compounds suitable for a wide range of applications. Thus, technical applications have been proposed as gas storage for example, hydrogen and methane, as gas sensors and as separation media.
- US 2004/0081611 A1 describes a process for the preparation of hydrogen peroxide in which oxygen or an oxygen-supplying compound is reacted with hydrogen or a hydrogen-donating compound in the presence of a catalyst.
- the catalyst used is a porous MOF compound which comprises at least one metal ion and at least one at least bidentate organic ligand which is coordinated to the metal ion.
- No. 6,624,318 B1 describes a process for the epoxidation of organic compounds, in which an organic compound is reacted with at least one epoxidizing agent in the presence of a catalyst.
- the catalyst is formed by a porous MOF compound comprising at least one metal ion and at least one at least bidentate ligand coordinately bonded to the metal atom.
- the MOF compound serves as a carrier, in which first a precursor compound of an active metal is introduced. After loading the MOF compound with the precursor compound, the active metal can be released, for example, by irradiating the precursor compound with light of a suitable wavelength, e.g. UV radiation.
- MOF compounds are initially provided in the form of a powder.
- the powder is then molded into shaped articles by conventional methods. Suitable methods are, for example, granulation or pelleting.
- a binder may be added to the MOF compound.
- the invention was therefore based on the object to provide a method, which allows the production of highly porous layers of a defined thickness.
- a substrate having a substrate surface is provided;
- At least portions of the substrate surface are modified so that surface-modified portions of it are generated ⁇ are provided in which anchor groups for metal ions;
- the substrate surface is first of all modified in such a way that anchor groups for metal ions are provided.
- An anchor group is understood to mean a group which is fixed on the one hand to the substrate surface and on the other hand has the property of being able to bind a metal ion.
- the anchor groups are preferably formed by a molecule which on the one hand has a group which can form a bond to the substrate surface and on the other hand a group which is ready for the binding of a metal ion. These anchor groups form a monolayer on the substrate surface.
- anchor groups are generally used groups that can form a, generally coordinative, binding with metal ions, so that the metal ions are fixed on the substrate surface.
- the metal ions of the MOF compound which should be fixed on the substrate surface, can be suitably selected as metal ions.
- the anchor groups can cause nucleation or fixation of the MOF compound on the substrate surface.
- layers of the MOF compound can be grown on the substrate surface in a very controlled manner, the layer thickness being controlled very precisely by the deposition conditions, for example the deposition time, the MOF solution saturation or the temperature program used to deposit the MOF compound can be passed through.
- the porous layer Due to the anchor groups, the porous layer is firmly fixed on the substrate surface, so that the porous layer can be used as a starting point for further modifications, for example, by loading the porous layer with further compounds, such as catalytically active compounds.
- the substrate surface can be modified in such a way that only portions of the substrate surface are provided with the anchor groups or with the layer of the MOF compound.
- conventional measures can be used by the substrate layer is provided, for example, in sections with a lacquer layer on which no anchor groups are provided.
- the substrate surface it is also possible for the substrate surface to be selectively modified in only certain sections, for example by being selectively oxidized or provided with a layer of a metal, for example a thin gold layer, so that the anchor groups are provided only in the pretreated regions of the substrate surface.
- anchor groups for the fixation of metallic ions on the substrate surface ⁇ provided.
- this is done by forming the surface modified portions by applying a spacer molecule to at least portions of the substrate surface having at least one metal ion anchor group and at least one head group capable of bonding to the substrate surface.
- spacer molecules are molecules which are at least bifunctional, whereby between anchor group and Head group is provided a connecting group, so that the anchor group can be provided spaced from the substrate surface.
- the connecting group is suitably selected so that a certain mobility of the anchor group is made possible relative to the position of the head group, so that the anchor group can adapt in position to the dimensions of the MOF compound.
- the spacer molecule preferably has a linear, that is to say a stretched, structure, which is preferably unbranched.
- the head group causes a fixation of the Spacermo- lekuls on the substrate surface.
- the head group can be connected to the substrate surface both via a coordinative and via a covalent bond.
- the attachment of the head group to the substrate surface creates a monomolecular position of the spacer molecule, which is fixed on the substrate surface.
- a layer of anchor groups is created, which are available for a fixation of metal ions.
- SAM monolayers
- the spacer molecules provide a connection between the substrate surface and the porous layer of the MOF compound.
- the spacer molecules are preferably chosen so that they can adapt to the structure of the MOF compound.
- the spacer molecule has the formula AR 1 -K, in which
- A an anchor group selected from -OH, -COOH, pyridyl, -NR 2 2 , -SR 4 , wherein R 2 , R 4 are each hydrogen or an alkyl radical having 1 to 6 carbon atoms and R 4 can additionally also denote -SR 2 ;
- Z a head group selected from -SR 4 , -SiX 3 , -COOH, -C (O) NHOH, where X is halogen or an alkoxy group having 1 to 6 carbon atoms, and R 4 is hydrogen, an alkyl radical having 1 to 6 carbon atoms or SR 2 , wherein R 2 has the meaning given above;
- R 1 an alkylene radical having 1 to 20 carbon atoms, an arylene radical having 6 to 18 carbon atoms or an aralkylene radical having 7 to 30 carbon atoms, wherein the radicals may also be completely or partially fluorinated.
- the head group is selected according to the structure of the substrate surface. If hydroxy groups are available on the surface, for example by the substrate being formed by a layer of silicon dioxide, aluminum oxide or another metal oxide which still has hydroxyl groups, the head group used can be, for example, an Si (OCH 3 ) 3 group which reacts with the Hydroxy group to form a Si-O-Si bond can react, so that the spacer molecule is fixed via a covalent bond to the substrate surface. If the substrate surface is formed by a thin gold layer or a similar material, a thiol group or a disulfide can be selected as head group, for example, which can form a covalent or coordinative bond to the substrate surface.
- a group is selected which can form a, preferably coordinative, bond to the metal ion of the MOF compound.
- a pyridyl radical CsH 3 R 3 N is chosen as the anchor group, the pyridyl group may be unsubstituted or substituted by further, preferably electron-donating, groups.
- R 3 may be, for example, an alkyl group having 1 to 6 carbon atoms, in particular a methyl group, an amino group or an alkyleneamine group.
- the substituent itself is capable of coordinating with the metal atom, it can assist the coordination of the metal atom and thus improve the binding of the MOF compound to the substrate.
- the substituents are preferably arranged trans to the ring nitrogen. Particular preference is given to choosing a carboxyl group as the anchor group, since in the MOF compounds known hitherto it is preferable to use linker molecules which likewise have carboxyl groups and therefore the anchor group of the spacer molecule fits easily into the MOF structure.
- a connecting radical R 1 is provided, usually a hydrocarbon radical. If possible, this residue is designed to be sufficiently flexible in order to achieve the best possible adaptation of the anchor groups to the structure of the MOF compound.
- the radical R 1 is preferably unbranched.
- linear alkylene chains are used which comprise 1 to 20 carbon atoms, preferably 10 to 20 carbon atoms.
- the alkylene chains may also be partially or fully fluorinated.
- bi- or oligophenyls which are linked in the 1,4-position, can be used as the connecting radical R 1 .
- the substrate surface can be surface-treated at least in the sections in which a connection of the spacer molecules is to take place, so that groups are provided for the binding of the head groups in sufficient density.
- a surface treatment may be, for example, an oxidation by which hydroxy groups are provided on the substrate surface.
- a surface treatment may be, for example, an oxidation by which hydroxy groups are provided on the substrate surface.
- a glass surface so that hydroxy groups are also produced.
- Flat at upper ⁇ formed by organic polymers in ⁇ game as plastic films can be produced by irradiation with high-energy radiation, corona treatment, or generate oxidizing groups which can then be used for the connection of the head groups of the Spacermolekuls.
- the production of such layers of spacer molecules on substrate surfaces is known, so that the skilled person can fall back on known methods.
- a solution of at least one metal ion and at least one at least bidentate linker molecule is preferably provided and the solution is brought into contact with at least the sections of the substrate surface on which a layer of the MOF compound is to be produced.
- the metal ion and the linker molecule are dissolved in a suitable solvent. This can be done in the same way per se, as in the already known production of MOF compounds. Since the deposition of the MOF compound on the substrate surface is in competition with the crystallization of the MOF compound from the solution, the conditions such as concentration of the solution or the temperature or the cooling rate of the saturated solution are preferably chosen so that preferably a deposition on the substrate surface is done. Initially, the metal ions are bound by the anchor groups provided on the substrate surface. Linker molecules can then bind to the metal ions again, so that the formation of the MOF network is initiated.
- the procedure is such that the solution is provided by dissolving the at least one metal ion and the at least one at least bidentate linker molecule at a first, higher temperature near the saturation limit of the MOF compound, at least the modified portions the substrate surface to be contacted with the solution in contact to be on which the MOF compound consider ⁇ eliminated, and the solution is cooled to a second, lower temperature at which the MOF compound on at least wake up the portions of the substrate surface.
- a solution of the constituents of the MOF compound ie metal ions and linker molecules, is prepared in a suitable solvent, wherein the concentration of the components at the given temperature is selected so that even no MOF connection fails.
- the solution can be pre-incubated for a longer period of time, for example 30 minutes to several hours, for example up to 72 hours, so that fragments of the MOF compound can already be formed in the solution.
- the solution can then be filtered to remove larger particles of the MOF compound that have formed during the incubation.
- the appropriately pretreated substrate is then brought into contact with the cooled solution, so that the MOF compound is deposited in a controlled manner on the substrate surface. Abkuhlrate, Crystallization temperature and treatment period are chosen so that a layer of the MOF compound is obtained in the desired thickness.
- the MOF reaction solution is first pretreated (incubated) at 60-90 0 C, then initiated the crystallite growth at 100-120 0 C and the surface-modified substrate then at a reduced temperature between 0-80 0 C, particularly advantageously at 25 0 C. introduced into the MOF reaction solution.
- the parameters for the growth of the MOF layer can be determined by appropriate series experiments.
- the coating time, ie the time during which the substrate remains in the MOF reaction solution, is preferably chosen between 1 and 12 hours, depending on the desired layer thickness.
- the substrate can be brought into contact with the already finished solution of the constituents of the MOF compound. However, it is also possible to prepare the solution of the constituents of the MOF compound in the presence of the substrate and to incubate the entire system together from the beginning.
- the MOF compound directly on the substrate surface, wherein the layer of the MOF compound is generated stepwise by at least sequentially at least the modified portions of the substrate surface to be covered with the MOF layer a solution of the at least one metal ion and with a solution of the at least one at least bidentate linker molecule are treated.
- the procedure may be such that the substrate provided with anchor groups is first immersed in a solution of the metal ion. The metal ions are then bound to the anchor groups.
- the substrate is made from the solution of the metal taken from lions and, optionally after a winding step, immersed in a solution of the at least bidentate linker molecule, so that now the linker molecules can attach to the already fixed to the anchor groups metal atoms.
- the substrate is removed again from the solution of the linker molecule and, if necessary, immersed in the solution of the metal ion again after a renewed winding step.
- any metal ion capable of binding the linker molecule can be selected per se.
- metal ions are Mg 2+ , Ca 2+ , Sr 2+ , Ba 2+ , Sc 3+ , Y 3+ , Ti 4+ , Zr 4+ , Hf 4+ , V 4+ , V 3+ , Nb 3+ , Ta 3+ , Cr 3+ , Mo 3+ , W 3+ , Mn 3+ , Mn 2+ , Re 3+ , Re 2+ , Fe 3+ , Fe 2+ , Ru 3+ , Ru 2+ , Os 3+ , Os 2+ , Co 3+ , Co 2+ , Rh 2+ , Rh + , Ir 2+ , Ir + , Ni 2+ , Ni + , Pd 2+ , Pd + , Pt 2+ , Pt + , Cu 2+ , Cu + , Ag + ,
- Suitable salts are, for example, the salts of organic acids, such as acetates or formates, and also inorganic acids, such as the halo acids, the sulfuric acid or the nitric acid.
- the salts should be soluble in the chosen solvent.
- the at least bidentate linker molecule comprises at least two functional groups which can form a coordinative bond to the metal ions of the MOF compound.
- Suitable functional groups are, for example: -COOH, -CS 2 H, -NO 2 , -B (OH) 2 , -SO 3 H, -Si (OH) 3 , -Ge (OH) 3 , -Sn (OH) 3 , -Si (SH) 3 , -Ge (SH) 3 , _Sn (SH) 3 , -PO 3 H, -AsO 3 H, -AsO 4 H, -P (SH) 3 , -As (SH) 3 , -CH (RSH) 2 , -C (RSH) 3 , -CH (RNH 2 ) 2 , -C (RNH 2 ) 3 , -CH (ROH) 2 , -C (ROH) 3 , -CH (RCN) 2
- the at least two functional groups may in themselves be linked by any organic group, provided that this organic group does not hinder the formation of the coordinative bond to the metal ion.
- Suitable organic groups through which the at least two organic groups are connected are preferably saturated or unsaturated aliphatic groups having preferably 1 to 20, particularly preferably 2 to 10 carbon atoms, aromatic groups having 5 to 30, in particular 6 to 20 carbon atoms and mixed aliphatic / aromatic groups having 6 to 30 carbon atoms.
- the aliphatic groups may be linear, branched or cyclic.
- the aromatic groups may comprise one or more phenyl nuclei, preferably 1 to 5 phenyl nuclei, which may also be in condensed form.
- the aliphatic or aromatic groups may also include one or more heteroatoms, such as N, O, S, B, P, Si or Al.
- the solvents for the production of the MOF compound should be inert to the reaction of the metal ion or the linker molecule, as well as sufficiently polar to be able to dissolve the components of the MOF compound.
- Suitable solvents are for example dimethylformamide, diethylformamide, N-methylpyrrolidone, dimethyl sulfoxide, chlorobenzene, fluorobenzene, water, alcohol system ⁇ le, such as ethanol or propanol, and mixtures of these solvents.
- the at least bidentate linker molecule used for the preparation of the MOF compound is preferably selected from compounds of the formula ZR 5 -Z, in which
- R an at least divalent hydrocarbon radical which is selected from the group of
- n is an integer between 1 and 5 and A is hydrogen, alkyl groups having 1-6 carbon atoms, alkenyl groups having 2-6 C atoms, Alk- oxy phenomenon having 1-6 carbon atoms and 1 to 3 Sau ⁇ erstoffatomen, halogen atoms or amino groups, where A may be the same or different at each occurrence.
- A is preferably hydrogen and Z is a carboxyl group. If Z is a pyridyl group, R 5 can also be a single bond, so that the linker molecule is formed, for example, by 4,4'-bipyridyl. In particular, R 5 is preferably a phenylene radical. For example, MOF-5 can be produced from these constituents.
- linker molecules are terephthalic acid, 2,5-dihydroxyterephthalic acid, 1, 2, 3-benzenetricarboxylic acid, 1,3,5-benzenetricarboxylic acid, 2, 6-naphthalenedicarboxylic acid, and 2,2'-bipyridine-5, 5'-dicarboxylic acid.
- the MOF layers can be applied to any surface, which may also be pretreated to improve adhesion.
- a substrate for example, a glass plate or a thin metal film of gold, silver or a similar metal may be used, for example, as an electrode, if the MOF layer, for example, should take over the function of a sensor.
- a preferred substrate is a silicon wafer. This can be processed by known methods, so that the inventive MOF layer can form part of an electronic circuit, for example.
- the MOF layer may be further modified, for example, to impart catalytic properties to the MOF layer.
- an active metal can be introduced into the cavities of the MOF.
- an active metal is meant a metal that catalyses a particular reaction, for example palladium, which can act as a hydrogenation catalyst.
- active metalpursors The introduction of the active metal takes place via suitable precursors, so-called active metalpursors.
- An active metal cursor is generally understood as meaning a compound from which the active metal can be released.
- Aktivmetallprakursoren compounds containing at least one atom of the active metal and at least one group which is bound via a ligator atom to the active metal atom.
- the ligator atom is selected from oxygen, sulfur, nitrogen, phosphorus and carbon.
- the active metal preferably carries organic groups, ie groups which, in addition to the ligator atoms O, S, N and P, have at least one carbon atom. These organic groups preferably have 1 to 24 carbon atoms, in particular 1 to 6 carbon atoms.
- the active metal cursor is selected so that it can penetrate the pores of the MOF compound.
- the diameter of the Aktivmetallprakurzors amounts in at least two dimensions preferably at most 90% of the pore diameter of the MOF Verbmdung, more preferably at most 80% and most preferably at most 50% of the pore diameter.
- the diameter of the active metal cursor in all three spatial dimensions is preferably at most 90%, in particular at most 80%, preferably at most 50%, of the pore diameter of the MOF compound.
- the introduction of the Aktivmetallprakursoren preferably takes place via the gas phase, since in this way very high loading densities can be achieved.
- the Aktivmetallprakursor reacts when applied generally not yet with the MOF compound of the porous layer, but is adsorbed by comparatively weak interactions on the surface or in the pores of the porous ⁇ sen layer.
- the MOF compound and the Aktivmetallprakursor thus form an adduct, from which let the Aktivme ⁇ tallprakursor, for example, by heating largely diffuse again.
- the attachment of the Aktivmetallprakurzors to the MOF compound can be done for example via polar groups that are available in the MOF. If no groups are available for a coordi- native or ionic interaction, the adduct formation can be carried out in a truncated fashion on van der Waals interactions.
- the active metal can be released. This can be, for example by a reduction with hydrogen gas or by exposure to high-energy radiation, wherein the groups are split off on the active metal and the active metal is deposited in the cavities of the MOF.
- a promoter metal is also introduced into the cavities of the MOF compound.
- promoter metal is understood as meaning a metal which forms the promoter in the finished catalyst.
- the promoter is generally present in the catalyst in the form of an oxide.
- zinc and optionally aluminum may form the promoter metals and copper the active metal.
- suitable promoter metals are, for example, tin, indium and titanium.
- the promoter metal is preferably present in the adduct not in the form of the metal but in oxidized form, for example as an oxide or as a metal complex.
- these promoters can also be in the form of metals in the finished catalyst.
- promoter metals for example noble metal particles, that is to say the active metals, can be deliberately poisoned by alloying, in order for example to increase the selectivity of the catalyzed reaction.
- the promoter metal can be contained in the MOF compound or can also be introduced as a separate compound into the adduct.
- the promoter metal or a suitable compound of the promoter metal can be introduced before the release of the active metal in the adduct, that is applied to the porous layer of the MOF compound.
- the active metal cursor to the layer of the MOF compound and to release the active metal. and then apply the promoter metal, generally in the form of a suitable precursor, to the porous layer.
- the promoter metal is likewise applied to the porous layer in the form of a precursor, preferably in the form of an organometallic compound, and the promoter metal or a suitable compound of the promoter metal, such as an oxide, is released from the precursor.
- the release can be carried out, for example, as in the case of the active metal cursor by exposure to an activation radiation.
- the promoter metal or the promoter metal compound as the active metal is deposited in nanodisperse form on the porous support.
- the Praadosor of the promoter metal preferably comprises at least ⁇ a promoter metal and at least one group which is bonded via a ligator at the promoter metal.
- the bond can take place both via a ⁇ bond and via a ⁇ bond.
- the ligator atom may be selected from oxygen, sulfur, nitrogen, phosphorus and carbon as in the case of the active metal cursor.
- the promoter metal preferably carries organic groups, ie groups which, in addition to the ligator atoms O, S, N and P, have at least one carbon atom. These organic groups preferably have 1 to 24 carbon atoms, in particular 1 to 6 carbon atoms.
- the promoter metal carries small ligands, such as trialkyl phosphines, wherein the alkyl groups preferably each comprise 1 to 6 carbon atoms, as well as isonitriles, nitriles, cyclopentadienyl, alkenyl, or alkyl groups, preferably methyl groups.
- small ligands such as trialkyl phosphines, wherein the alkyl groups preferably each comprise 1 to 6 carbon atoms, as well as isonitriles, nitriles, cyclopentadienyl, alkenyl, or alkyl groups, preferably methyl groups.
- the groups bound to the promoter metal preferably have between 1 and 24, more preferably 1 to 6, carbon atoms and may optionally also contain groups bonded via a heteroatom which can stabilize the precursor of the promoter metal as Lewis bases.
- the groups are in the precursor of the promoter metal selected from alkyl groups, alkenyl groups, aryl groups, a cyclopentadienyl radical and its derivatives, and a hydride group.
- Organometallic compounds are to be understood as meaning:
- Metal complexes in which, although there is no metal-carbon bond, but (coordinatively bound) ligands are contained which are organic in nature, ie belonging to the family of hydrocarbon compounds or derivatives thereof. "Organometallic" thus distinguishes from purely inorganic metal complexes that contain neither metal-carbon bonds nor organic ligands.
- the order in which the at least one kursor Aktivmetallpra- and the at least one Promotorme ⁇ talls is applied to the porous layer of the Prakursor if necessary, is subject to no restrictions on.
- the porous layer of the MOF compound can first be loaded with the active metal cursor and then the precursor of the promoter metal applied before the active metal and optionally the promoter metal to be fixed by exposure to the activation radiation in the porous layer. But it is also possible to first introduce the precursor of the promoter metal in the porous layer and then the Aktivmetallprakursor to this then by exposure to the activation radiation in the porous layer of the Fix MOF connection.
- the active metal cursor into the layer of the MOF compound and to fix the active metal by irradiation with the activating radiation.
- the promoter metal cursor can then be applied to the MOF compound already coated with the active metal and fixed there.
- the fixation of the promoter metal or the promoter metal compound, such as an oxide of the promoter metal by exposure to the activation radiation or by other methods, eg. For example, by oxidation or reduction with a suitable gaseous Oxidations- or reducing agent.
- the active metal cursor or the precursor of the promoter metal is first physisorbed or chemisorbed by the MOF compound, in particular on the surfaces of the cavities of the MOF compound. Exposure to the activation radiation then releases and precipitates the active metal from the active metal cursor or the promoter metal or a suitable compound of the promoter metal from the promoter metal cursor.
- the active metal and the promoter metal can also be introduced into the porous layer of the MOF compound in such a way that the active metal cursor and the promoter metal cursor form a redox couple, so that, as a result of a reaction of the precursors, active metal and promoter in finely divided form intimately mix in the cavities of the MOF. Connection to be deposited.
- At least one Aktivmetallpraadosor which comprises at least one active metal in a reducible form and at least one group which is bonded via a ligator atom to the active metal atom, which is selected from oxygen, Sulfur, nitrogen, phosphorus and carbon.
- the active metal cursor is reduced with a reducing agent which has at least one promoter metal and at least one hydride group and / or an organic group which is bonded to the promoter atom via a carbon atom.
- the reductor, or the promoter metal contained therein, is finally converted into the promoter.
- the promoter is usually formed by an oxide of the promoter metal.
- the active metal cursor in this embodiment preferably comprises at least two groups which are bonded to the active metal atom via a ligator atom, wherein the ligator atom is selected from oxygen, sulfur, nitrogen, phosphorus and carbon.
- the promoter metal cursor acting as reductor in this embodiment comprises at least one promoter metal and at least one hydride group and / or an organic radical which is bonded to the promoter metal via a carbon atom.
- the bond can be carried out both via a ⁇ - as well as a ⁇ -Bmdung. If the groups on the active metal and on the promoter metal are bonded to the metal atom via a carbon atom, the molecular weight of the groups of the promoter metal precursor is preferably lower than the molecular weight of the groups of the active metal cursor.
- the groups bound in the promoter metalpractice preferably have between 1 and 24, more preferably 1 to 6, carbon atoms and may optionally also contain groups which are bonded via a heteroatom and which can stabilize the promoter metal pore cursor as Lewis bases.
- the groups in the promoter metalpipercursor are preferably selected from alkyl groups, alkenyl groups, aryl groups, a cyclopentadienyl radical and its derivatives, and also a hydride group.
- a promoter metal is understood to mean the metal which forms the promoter in the finished catalyst.
- the promoter lies in the common as an oxide. In the case of a catalyst for the synthesis of methanol, zinc and possibly aluminum form the promoter metals.
- the promoter metal precursor acting as reductor preferably comprises at least two hydride groups and / or organic groups which are bonded to the promoter atom via a carbon atom.
- this group is selected from a group formed from alkyl groups, alkenyl groups, aryl groups, a cyclopentadienyl group and its derivatives.
- the order in which the at least one active metal precursor and the at least one promoter metalpursor is introduced into the porous layer of the MOF compound is in this case not subject to any restrictions.
- the layer of the MOF compound can first be impregnated with the active metal cursor and then the promoter metalpractor can be applied to fix the active metal in the cavities of the MOF Verbmdung.
- the promoter metal cursor into the cavities of the MOF compound and then the Aktivmetallprakursor. It is also possible to alternately introduce the active metal cursor and the promoter metal precursor several times into the porous layer of the MOF compound.
- Another object of the invention is therefore directed to a composite of a substrate and a deposited on at least portions of a substrate surface of the substrate highly porous layer, wherein the layer is composed of a MOF Verbmdung.
- the layer of the MOF compound is Fixed on the substrate surface via a layer formed from anchor groups.
- the MOF compound is preferably composed of at least one metal ion and at least one at least bidentate linker molecule.
- the class of MOF compounds is known per se.
- the composite according to the invention is accordingly obtained by bonding these MOF compounds in the form of a thin layer onto the substrate. Suitable metal ions and linker molecules have already been explained in the process.
- the metal ion is particularly preferably selected from Zn, Sn, In, Ti, Cu, Fe.
- the layer thickness of the MOF layer is chosen depending on the intended application. If the MOF layer acts as part of a sensor element, the layer thickness is preferably chosen to be very small, in order to enable a rapid response of the sensor or a rapid return to rest. When used as a catalyst, larger layer thicknesses are also used to ensure high conversion of the catalyzed reaction.
- the layer thickness of the highly porous layer is preferably less than 100 ⁇ m. When used as a catalyst, the layer thickness is preferably between 10 nm and 100 ⁇ m, particularly preferably between 10 and 90 ⁇ m. When used as a sensor, layer thicknesses in the range of 5 nm to 2 ⁇ m, particularly preferably 10 nm to 100 nm, are preferred.
- an active metal is incorporated in the highly porous layer. Suitable active metals have already been discussed above.
- a promoter metal or a promoter metal compound may also be incorporated into the MOF compound.
- FIG. 2 shows a thin, structuredly grown MOF-5 layer on a mixed-terminated COOH / CF 3 -SAM on Au (IIl) model substrate according to Example 1;
- FIG. 3 a dense IR-MOF-8 layer (10 ⁇ m) grown on a COOH SAM on a Si0 2 / Si model substrate according to Example 2 (top view, bottom cross section).
- FIG. 1 shows, in the form of a model, the connection of the MOF connection to the substrate surface.
- Spacer molecules are arranged on the substrate surface and carry an anchor group at their end remote from the substrate surface.
- Metal atoms for example Zn 2+ ions, are coordinated to these anchor groups.
- carboxyl groups of terephthalic acid are coordinated to these metal ions, forming the Lmker molecules of the MOF compound.
- linker molecules then lead to the zinc atoms contained in the MOF structure, so that a three-dimensional network is formed in the form of juxtaposed cubes.
- the process of the surface-controlled growth of MOF crystallites or a nano- to microcrystalline MOF layer proceeds according to the present concept as outlined below.
- Pretreatment of the prior art MOF reaction solution for the synthesis of macrocrystalline MOF powder materials at an elevated temperature for a precisely determined incubation time results in supersaturation of the solution with MOF nucleation nuclei below the optical visibility limit (turbidity) in the colloidal, respectively nanoscale region due to the self-aggregation of so-called SBUs (seconday building units, secondary education units) and the organic linker molecules.
- SBUs secondary building units, secondary education units
- Decisive for the surface-controlled (and optionally also laterally selective) layer growth is the prevention of rapid, homogeneous crystallite growth after initiation of the growth by cooling the MOF reaction solution while simultaneously introducing the surface-modified substrate into the MOF reaction solution.
- nucleation of the MOF crystallites and growth over the homogeneous phase are kinetically favored (lower activation energy or entropy). Therefore, preferred crystal growth occurs at the surface of the substrate. This leads to the formation of chemical bonds between the MOF crystallites and the surface modified with anchor groups.
- MOF-bondable organic monolayer SAM
- MOF reaction solution is prepared and incubated at elevated temperature for several hours. After a brief increase in temperature until crystallization begins, it is filtered and the substrate is contacted at low temperature in contact with the supersaturated MOF. Reaction solution brought. The MOF layer thickness is adjusted by the crystallization time.
- a microprint ( ⁇ CP) monolayer (SAM) of the spacer molecules 16-mercapto-hexadecanoic acid and IH, IH, 2H, 2H-perfluorododecanethiol on Au (IIl) on TiO 2 SSi is introduced into a supersaturated MOF-5 reaction solution.
- This is prepared from Zn (NO 3 ) 2 ⁇ -6 H 2 O (3.57 g) and terephthalic acid (0.67 g) in 100 mL diethylformamide, which was incubated for 72 hours at 80 0 C and then slowly to 105 0 C to the beginning Crystallization was heated.
- the substrate with the SAM (top) is introduced into the reaction solution.
- a structured MOF-5 layer has grown up.
- Shorter or longer crystallization times lead to correspondingly varying layer thicknesses.
- Very thin MOF-5 layers of about 10-20 nm are obtained after just 1 h, comparatively thick layers up to about 10 ⁇ m are formed after 6-12 h.
- the MOF film sticks to the substrate and can not be removed, eg by repeated washing cycles with ethanol.
- Scanning electron microscopy (SEM) and element-dispersive X-ray fluorescence analysis (EDX) as well as photoelectron spectroscopy (XPS) demonstrate the expected elemental composition of the MOF layer of Zn and O as well as C.
- the crystalline structure of the film is determined by X-ray diffraction (PXRD) in agreement with an authentic microcrystalline MOF -5 powder sample confirmed.
- Fig. 2 shows a light micrograph of the substrate surface.
- the regions covered with MOF crystallites are recognizable in the form of circular brighter regions, while the dark regions correspond to sections in which no MOF crystallites have grown or adhere.
- Example 2 IR-MOF-8 @ COOH-SAM / SiO 2
- a COOH-terminated SAM from 7-oct-1-enyltrichlorosilane (OETS) was prepared on a Si (111) wafer with native SiO 2 / OH layer (100 nm) by standard methods (silanization) and the terminal COOH function corresponding the literature specification introduced by functionalization of the terminal double bond. [Q. Liu, J. Ding, FK Mante, SL Mir, GR Baran, Biomaterials 2002, 23, 3103-3111].
- Fig. 3 is a scanning electron micrograph of the resulting IR-MOF-8 layer of thickness 10 microns shown.
- the MOF layers contain dense or coalesced MOF crystallites with crystallite dimensions of between 10 nm and 10 ⁇ m, which are typical for specific conditions. These primary crystallites and thus the resulting MOF coating still contains solvents, eg diethylformamide molecules from the MOF reaction solution, which are incorporated in the pores or cavities of the MOF lattice. This solvent can be removed by diffusive exchange with chloroform or other readily volatile solvents.
- solvents eg diethylformamide molecules from the MOF reaction solution
- a layer MOF-5 @ COOH-SAM / Au is prepared by preparing a SAM from 16-mercaptohexadecanoic acid on Au (IIl) by standard methods and then coated with MOF-5.
- the obtained MOF-5 layer is freed analogously to Example 2 of adsorbed solvent diethylformamide by inserting three times and washing the coated substrate in chloroform (each 6 h) and in vacuo (1 Pa dynamic vacuum, 25 ° C) gently over 2 h dried.
- the resulting removed from the solvent MOF-5 layer is then the vapor of ( ⁇ 5 -C 5 H 5 ) Pd ( ⁇ 3 -C 3 H 5 ) (1), ⁇ 3 -allyl- ⁇ 5 -cyclopentadienylpalla- dium (II), exposed (1 Pa, static vacuum, 50 ° C.) by placing a sample of the red palladium compound (100 mg) in a glass boat next to the dried layer MOF-5 @ COOH-SAM / Au in an evacuated and sealed reaction tube , After a few minutes, the substrate coated with MOF-5 turns red, whereas comparison substrates that are not coated with MOF-5, namely Au (IIl) and COOH-SAM / Au, remain unchanged.
- the loaded with the palladium compound 1 MOF-5 layer is exposed at 25 0 C and atmospheric pressure of a Formiergasatmosphare (5% H 2 , 95% N 2 ), wherein the coating immediately turns to black. All volatiles are finally removed in a dynamic vacuum (1 Pa, 25 ° C) (10 min).
- the resulting material ⁇ Pd @ MOF-5 ⁇ @ COOH-SAM / Au is characterized as in Examples 1 and 2 by SEM-EDX, XPS, PXRD. The presence of the unchanged crystalline MOF-5 structure is shown by comparison with a microcrystalline MOF-5 sample by the characteristic reflections of the X-ray diffraction pattern.
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Abstract
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE200510035762 DE102005035762A1 (de) | 2005-07-29 | 2005-07-29 | Hochporöse Schichten aus MOF-Materialien und Verfahren zur Herstellung derartiger Schichten |
| PCT/EP2006/007335 WO2007014678A1 (de) | 2005-07-29 | 2006-07-25 | Hochporöse schichten aus mof-materialien und verfahren zur herstellung derartiger schichten |
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| EP1910586A1 true EP1910586A1 (de) | 2008-04-16 |
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|---|---|---|---|
| EP06776396A Withdrawn EP1910586A1 (de) | 2005-07-29 | 2006-07-25 | Hochporöse schichten aus mof-materialien und verfahren zur herstellung derartiger schichten |
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| Country | Link |
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| US (1) | US20090169857A1 (de) |
| EP (1) | EP1910586A1 (de) |
| AR (1) | AR057693A1 (de) |
| DE (1) | DE102005035762A1 (de) |
| WO (1) | WO2007014678A1 (de) |
| ZA (1) | ZA200800837B (de) |
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| KR101663184B1 (ko) * | 2009-12-15 | 2016-10-06 | 삼성전자주식회사 | 하이브리드 다공성 물질 및 그의 제조방법 |
| TWI412854B (zh) * | 2010-02-04 | 2013-10-21 | Chunghwa Picture Tubes Ltd | 觸控液晶模組及其整合式觸控基板 |
| US8398659B2 (en) | 2010-03-12 | 2013-03-19 | Coloplast A/S | Method of intracorporeally suturing tissue |
| WO2011123795A1 (en) | 2010-04-02 | 2011-10-06 | Battelle Memorial Institute | Methods for associating or dissociating guest materials with a metal organic framework, systems for associating or dissociating guest materials within a series of metal organic frameworks, and gas separation assemblies |
| CN103338858B (zh) * | 2010-08-25 | 2016-02-10 | 康奈尔大学 | 金属有机骨架改性材料、及其制备和使用方法 |
| RU2013130865A (ru) * | 2010-12-07 | 2015-01-20 | Басф Се | Способ нанесения на несущую поверхность покрытий с пористой металлорганической структурой |
| DE102011002540B4 (de) | 2011-01-11 | 2018-05-30 | Technische Universität Bergakademie Freiberg | PLOT-Säulen für die Gaschromatographie sowie Verfahren und Vorrichtung zu deren Herstellung |
| DE102011050684A1 (de) | 2011-05-27 | 2012-11-29 | Karlsruher Institut für Technologie | Vorrichtung und Verfahren zur Herstellung von hoch porösen, kristallinen Oberflächenbeschichtungen |
| DE102011106668A1 (de) | 2011-07-05 | 2013-01-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Beschichtung eines Bauteils und beschichtetes Bauteil |
| WO2014115177A2 (en) * | 2013-01-28 | 2014-07-31 | Council Of Scientific & Industrial Research | A process for the preparation of mofs-porous polymeric membrane composites |
| JP2017504469A (ja) * | 2013-11-29 | 2017-02-09 | キング アブドラ ユニバーシティ オブ サイエンス アンド テクノロジー | ゼオライト様有機金属骨格膜 |
| US9789444B2 (en) * | 2014-03-04 | 2017-10-17 | The Texas A&M University System | Methods to enhance separation performance of metal-organic framework membranes |
| JP6179591B2 (ja) | 2014-03-12 | 2017-08-16 | 東レ株式会社 | サイジング剤塗布強化繊維、サイジング剤塗布強化繊維の製造方法、プリプレグおよび繊維強化複合材料 |
| DE102014215568A1 (de) * | 2014-08-06 | 2016-02-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung eines Adsorbens aus metallorganischen Gerüststrukturen (MOF) |
| EP2998378A1 (de) * | 2014-09-18 | 2016-03-23 | MOF Application Services | Beschichtungsverfahren eines metallträgers mit einem mof-material-adsorberstoff |
| KR102468285B1 (ko) | 2016-08-23 | 2022-11-18 | 바스프 에스이 | 복합 물질 |
| TW201941937A (zh) * | 2018-03-30 | 2019-11-01 | 日商大金工業股份有限公司 | 積層體的製造方法 |
| US20190334124A1 (en) * | 2018-04-28 | 2019-10-31 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Oled packaging structure and oled display panel |
| US12203883B2 (en) | 2018-08-17 | 2025-01-21 | Trustees Of Dartmouth College | Conductive bimetallic metal-organic frameworks for the detection of analytes |
| CN109881483B (zh) * | 2019-01-24 | 2021-12-17 | 浙江理工大学 | 一种利用金属-有机框架材料功能化改性聚丙烯/纤维素水刺无纺布的方法及其应用 |
| JP7336089B2 (ja) * | 2019-10-11 | 2023-08-31 | 大原パラヂウム化学株式会社 | 多孔性金属錯体造粒物の製造方法 |
| US11643751B2 (en) | 2020-03-10 | 2023-05-09 | Matrix Sensors, Inc. | Apparatus and method for producing a crystalline film on a substrate surface |
| CN117105345B (zh) * | 2022-11-24 | 2025-09-09 | 清华大学 | 一种膜电催化系统、双氧化协同膜电催化系统以及基于其的水处理方法 |
| CN119636203B (zh) * | 2024-11-19 | 2025-10-24 | 安徽紫金新材料科技股份有限公司 | 一种吸湿包装复合膜及其制备工艺 |
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| US4279781A (en) * | 1979-10-09 | 1981-07-21 | United Catalysts Inc. | Catalyst for the synthesis of methanol |
| DE3317725A1 (de) * | 1983-05-16 | 1984-11-22 | Süd-Chemie AG, 8000 München | Katalysator fuer die methanolsynthese |
| DE3403491A1 (de) * | 1984-02-02 | 1985-08-14 | Süd-Chemie AG, 8000 München | Katalysator zur synthese von methanol und hoehere alkohole enthaltenden alkoholgemischen |
| DE4416425A1 (de) * | 1994-05-10 | 1995-11-16 | Metallgesellschaft Ag | Verfahren zur Erzeugung von Methanol |
| US5648508A (en) * | 1995-11-22 | 1997-07-15 | Nalco Chemical Company | Crystalline metal-organic microporous materials |
| US6284317B1 (en) * | 1998-04-17 | 2001-09-04 | Massachusetts Institute Of Technology | Derivatization of silicon surfaces |
| US6624318B1 (en) * | 2002-05-30 | 2003-09-23 | Basf Aktiengesellschaft | Process for the epoxidation of an organic compound with oxygen or an oxygen-delivering compounds using catalysts containing metal-organic frame-work materials |
| US6893564B2 (en) * | 2002-05-30 | 2005-05-17 | Basf Aktiengesellschaft | Shaped bodies containing metal-organic frameworks |
| US6617467B1 (en) * | 2002-10-25 | 2003-09-09 | Basf Aktiengesellschaft | Process for producing polyalkylene carbonates |
| US7008607B2 (en) * | 2002-10-25 | 2006-03-07 | Basf Aktiengesellschaft | Process for preparing hydrogen peroxide from the elements |
| DE10355087A1 (de) * | 2003-11-24 | 2005-06-09 | Basf Ag | Verfahren zur elektrochemischen Herstellung eines kristallinen porösen metallorganischen Gerüstmaterials |
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- 2006-07-25 EP EP06776396A patent/EP1910586A1/de not_active Withdrawn
- 2006-07-25 WO PCT/EP2006/007335 patent/WO2007014678A1/de not_active Ceased
- 2006-07-25 US US11/995,241 patent/US20090169857A1/en not_active Abandoned
- 2006-07-27 AR ARP060103252 patent/AR057693A1/es unknown
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| See references of WO2007014678A1 * |
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| AR057693A1 (es) | 2007-12-12 |
| ZA200800837B (en) | 2009-08-26 |
| WO2007014678A1 (de) | 2007-02-08 |
| US20090169857A1 (en) | 2009-07-02 |
| DE102005035762A1 (de) | 2007-02-01 |
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