EP1821342A4 - Kühlkörpermaterial, verfahren zur herstellung eines derartigen kühlkörpermaterials und halbleiterlaservorrichtung - Google Patents

Kühlkörpermaterial, verfahren zur herstellung eines derartigen kühlkörpermaterials und halbleiterlaservorrichtung

Info

Publication number
EP1821342A4
EP1821342A4 EP05785955A EP05785955A EP1821342A4 EP 1821342 A4 EP1821342 A4 EP 1821342A4 EP 05785955 A EP05785955 A EP 05785955A EP 05785955 A EP05785955 A EP 05785955A EP 1821342 A4 EP1821342 A4 EP 1821342A4
Authority
EP
European Patent Office
Prior art keywords
heat sink
sink material
manufacturing
semiconductor laser
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP05785955A
Other languages
English (en)
French (fr)
Other versions
EP1821342A1 (de
Inventor
Hideaki Morigami
Takashi Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ALMT Corp
Original Assignee
ALMT Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ALMT Corp filed Critical ALMT Corp
Publication of EP1821342A1 publication Critical patent/EP1821342A1/de
Publication of EP1821342A4 publication Critical patent/EP1821342A4/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H01S5/02492—CuW heat spreaders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4935—Heat exchanger or boiler making

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Semiconductor Lasers (AREA)
EP05785955A 2004-12-08 2005-09-20 Kühlkörpermaterial, verfahren zur herstellung eines derartigen kühlkörpermaterials und halbleiterlaservorrichtung Ceased EP1821342A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004354897 2004-12-08
PCT/JP2005/017245 WO2006061937A1 (ja) 2004-12-08 2005-09-20 ヒートシンク材およびその製造方法ならびに半導体レーザー装置

Publications (2)

Publication Number Publication Date
EP1821342A1 EP1821342A1 (de) 2007-08-22
EP1821342A4 true EP1821342A4 (de) 2009-12-16

Family

ID=36577767

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05785955A Ceased EP1821342A4 (de) 2004-12-08 2005-09-20 Kühlkörpermaterial, verfahren zur herstellung eines derartigen kühlkörpermaterials und halbleiterlaservorrichtung

Country Status (5)

Country Link
US (2) US20070215337A1 (de)
EP (1) EP1821342A4 (de)
JP (1) JP4975445B2 (de)
CA (1) CA2560410C (de)
WO (1) WO2006061937A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5296977B2 (ja) * 2006-11-30 2013-09-25 株式会社テクニスコ 複合材ヒートシンクとその製造方法
DE102009034082A1 (de) * 2009-07-21 2011-01-27 Osram Gesellschaft mit beschränkter Haftung Optoelektronische Baueinheit und Verfahren zur Herstellung einer solchen Baueinheit
JP5450313B2 (ja) 2010-08-06 2014-03-26 株式会社東芝 高周波半導体用パッケージおよびその作製方法
JP5902543B2 (ja) * 2012-04-20 2016-04-13 三菱電機株式会社 半導体装置及びその製造方法
JP6652856B2 (ja) 2016-02-25 2020-02-26 株式会社フジクラ 半導体レーザモジュール及びその製造方法
DE102018210141A1 (de) * 2018-06-21 2019-12-24 Trumpf Photonics, Inc. Diodenlaseranordnung und Verfahren zur Herstellung einer Diodenlaseranordnung
JP7447694B2 (ja) 2020-06-22 2024-03-12 ウシオ電機株式会社 半導体発光装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237145A (en) * 1989-12-29 1993-08-17 Mitsubishi Denki K.K. Wire cut electric discharge machining method
JPH11262821A (ja) * 1998-03-18 1999-09-28 Ngk Insulators Ltd ワイヤ放電加工装置、ワイヤ放電加工方法、ワイヤ放電加工用ワイヤ電極及び押出成形用金型
EP0949727A2 (de) * 1998-04-08 1999-10-13 Fuji Photo Film Co., Ltd. Wärmesenke und Verfahren zur Herstellung
JP2000022284A (ja) * 1998-07-06 2000-01-21 Fuji Photo Film Co Ltd ヒートシンクおよびその加工方法
EP1452614A1 (de) * 2001-11-09 2004-09-01 Sumitomo Electric Industries, Ltd. Gesinterter diamant mit hoher wärmeleitfähigkeit und verfahren zu seiner herstellung sowie wärmesenken, bei denen er verwendet wird

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0217957B1 (de) * 1985-01-17 1991-04-17 Inoue Japax Research Incorporated Schneiddrahtfunkenerosionsentladegerät und dessen steuerung
JPH06125143A (ja) * 1992-10-09 1994-05-06 Seiko Epson Corp 半導体レーザ素子
JPH11346029A (ja) * 1998-06-02 1999-12-14 Rohm Co Ltd 半導体レーザ装置
JP3505704B2 (ja) * 1999-05-10 2004-03-15 株式会社アライドマテリアル 放熱基板およびその製造方法
JP4473995B2 (ja) * 1999-11-29 2010-06-02 キヤノン株式会社 半導体素子の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237145A (en) * 1989-12-29 1993-08-17 Mitsubishi Denki K.K. Wire cut electric discharge machining method
JPH11262821A (ja) * 1998-03-18 1999-09-28 Ngk Insulators Ltd ワイヤ放電加工装置、ワイヤ放電加工方法、ワイヤ放電加工用ワイヤ電極及び押出成形用金型
EP0949727A2 (de) * 1998-04-08 1999-10-13 Fuji Photo Film Co., Ltd. Wärmesenke und Verfahren zur Herstellung
JP2000022284A (ja) * 1998-07-06 2000-01-21 Fuji Photo Film Co Ltd ヒートシンクおよびその加工方法
EP1452614A1 (de) * 2001-11-09 2004-09-01 Sumitomo Electric Industries, Ltd. Gesinterter diamant mit hoher wärmeleitfähigkeit und verfahren zu seiner herstellung sowie wärmesenken, bei denen er verwendet wird

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2006061937A1 *

Also Published As

Publication number Publication date
US20070215337A1 (en) 2007-09-20
EP1821342A1 (de) 2007-08-22
US20110138627A1 (en) 2011-06-16
CA2560410C (en) 2014-02-18
US8664088B2 (en) 2014-03-04
JP4975445B2 (ja) 2012-07-11
CA2560410A1 (en) 2006-06-15
JPWO2006061937A1 (ja) 2008-06-05
WO2006061937A1 (ja) 2006-06-15

Similar Documents

Publication Publication Date Title
EP1821378A4 (de) Halbleiterlasereinrichtung und verfahren zu ihrer herstellung
EP1760849A4 (de) Halbleiter-laser-bauelement und herstellungsverfahren dafür
TWI346995B (en) Semiconductor device and method for producing the same
TWI319907B (en) Heat sink, integrated circuit package and the method of fabricating thereof
EP1921674A4 (de) Halbleiterbauelement und verfahren zu seiner herstellung
TWI316293B (en) Semiconductor device and method for manufacturing the same
TWI366218B (en) Method for manufacturing semiconductor device
TWI366283B (en) Nitride semiconductor light-emitting device and method for fabrication thereof
TWI350573B (en) Semiconductor device package and method for manufacturing same
SG119329A1 (en) Semiconductor device and method for manufacturing the same
TWI346591B (en) Laser processing method and semiconductor chip
EP1887624A4 (de) Halbleiterbauelement und verfahren zu seiner herstellung
EP1620894A4 (de) Substrat, herstellungsverfahren dafür und halbleiterbauelement
EP1686629A4 (de) Halbleiterbauelement und verfahren zu seiner herstellung
EP1935027A4 (de) Halbleiterbauelement und herstellungsverfahren dafür
EP1946374A4 (de) Halbleitervorrichtung und herstellungsverfahren dafür
EP1837922A4 (de) Auf gan-basierendes halbleiter-leuchtelement und verfahren zu seiner herstellung
EP1966740A4 (de) Halbleiterbauelement und herstellungsverfahren dafür
EP1783824A4 (de) Verfahren zur bildung einer halbleiterregion des p-typs und halbleiterelement
SG126899A1 (en) Light-emitting device, method for making the same,and nitride semiconductor substrate
EP1817796A4 (de) Halbleiterbauelement und herstellungsverfahren dafür
TWI346998B (en) Semiconductor device having high cooling efficiency and method for manufacturing the same
AU2003289275A1 (en) Semiconductor element heat dissipating member, semiconductor device using same, and method for manufacturing same
TWI348216B (en) Manufacturing method for semiconductor device and semiconductor device
EP1737035A4 (de) Kühlkörper-herstellungsverfahren

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20061004

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20091113

17Q First examination report despatched

Effective date: 20151014

REG Reference to a national code

Ref country code: DE

Ref legal event code: R003

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED

18R Application refused

Effective date: 20161215