EP1729416B1 - Circuit avec signalement d'erreurs et procédé associé pour la commande de commutateurs de puissance semi-conducteurs - Google Patents

Circuit avec signalement d'erreurs et procédé associé pour la commande de commutateurs de puissance semi-conducteurs Download PDF

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Publication number
EP1729416B1
EP1729416B1 EP06010910A EP06010910A EP1729416B1 EP 1729416 B1 EP1729416 B1 EP 1729416B1 EP 06010910 A EP06010910 A EP 06010910A EP 06010910 A EP06010910 A EP 06010910A EP 1729416 B1 EP1729416 B1 EP 1729416B1
Authority
EP
European Patent Office
Prior art keywords
voltage
secondary side
primary side
error
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP06010910A
Other languages
German (de)
English (en)
Other versions
EP1729416A2 (fr
EP1729416A3 (fr
Inventor
Jan Lehmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semikron GmbH and Co KG, Semikron Elektronik GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of EP1729416A2 publication Critical patent/EP1729416A2/fr
Publication of EP1729416A3 publication Critical patent/EP1729416A3/fr
Application granted granted Critical
Publication of EP1729416B1 publication Critical patent/EP1729416B1/fr
Not-in-force legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Definitions

  • the invention relates to a circuit arrangement for controlling circuit breakers arranged in bridge circuit topology and an associated method.
  • Such bridge arrangements of circuit breakers are known as half, H (two-phase), or as three-phase bridge circuits, wherein the single-phase half-bridge represents the basic building block of such power electronic circuits.
  • a half-bridge circuit two power switches, a first, so-called. TOP switch and a second so-called. BOT switch are arranged in a series circuit.
  • Such a half-bridge usually has a connection to a DC intermediate circuit. The center tap is typically associated with a load.
  • a drive circuit is necessary for driving the power switch.
  • Such drive circuits consist of the prior art of several sub-circuits or function blocks.
  • the drive signal coming from a higher-level controller is processed in a first subcircuit, the primary side, and supplied via further components to the driver circuits, the secondary sides, and finally to the control input of the respective circuit breaker.
  • the primary side for conditioning the control signals in terms of potential / galvanically separated from the secondary side since the circuit breaker, at least the TOP switch of the half-bridge in operation at a constant potential are located and thus a tension isolation is inevitable.
  • This separation takes place according to the prior art by way of example by means of transformers, optocouplers or optical waveguides.
  • This galvanic isolation is carried out at least for the TOP switch, but is also necessary for higher power for the BOT switch due to a possible disruption of the ground reference potential during switching, or generally necessary in the case of the use of symmetrically grounded DC link.
  • level shifters are used according to the prior art, at least for the TOP switch.
  • Transducers have proved to be particularly advantageous for a hybrid structure, since in principle not only signal transmission from the primary side to the secondary side is possible, but also transmission in the opposite direction.
  • a transmission of further information on the error or other status information about the transmitter is not known.
  • the transmission of such information is known only via additional transmission channels, for example in the form of optocouplers or additional transformers, but commercially rarely realized, since the cost is too high for this purpose.
  • the invention has for its object to provide an improved circuit arrangement for power semiconductor switch in bridge arrangement and an associated method, at the same time the additional effort in the form of components and manufacturing costs of the circuit remains low.
  • the inventive idea is based on a known circuit arrangement for controlling power semiconductor switches in the bridge topology consisting of a primary-side part (primary side) and a secondary-side part (secondary side) per power semiconductor switch.
  • the bridge circuit consists of a first, the TOP and a second BOT switch. These are connected to the prior art with a DC link.
  • the center tap between the TOP and the BOT switch forms the AC output of the bridge circuit.
  • the circuit arrangement for activation has on its primary side at least one signal processing, whose control information by means of at least one transformer (transforming action principle) potential-free serve the control of the associated secondary side.
  • This secondary side in turn has at least one signal processing and at least one driver stage for the respective switch.
  • the circuit arrangement has at least one DC / DC converter (transforming active principle).
  • the invention is based on a circuit arrangement for controlling power semiconductor switches, wherein an already existing transformer is used for transmitting error and / or status information from the secondary side to the primary side, according to the prior art for the transmission of drive signals from the primary side to the secondary side and a single error pulse from the secondary side to the primary side is used. Furthermore, the circuit arrangement has at least one DC / DC converter for supplying the secondary side with power from the primary side.
  • EP 0 268 930 A1 shows a similar circuit arrangement.
  • the circuit arrangement is characterized by circuit parts provided on the secondary side, which can evaluate the secondary-side voltage of the DC / DC converter, and further circuit parts for error storage and transmission of the error and / or status information from the secondary side to the primary side.
  • circuit parts are provided for setting different voltage values on the DC / DC converter, as well as further circuit parts for detecting the error and / or status information transmitted via the transmitter from the secondary side to the primary side.
  • the associated method is used to transmit error and / or status information from the secondary side to the primary side in the circuit arrangement according to the invention.
  • error-free operation as is also known from the prior art, energy is transmitted from the primary side via the DC / DC converter to the secondary side.
  • a voltage in a defined, first voltage interval is set on the secondary side.
  • the control pulses for the power semiconductor switches are transmitted by means of transformers from the primary side to the secondary side.
  • the secondary side transmits an error pulse to the primary side by means of the transformer. Then, the primary side changes the energy transfer by means of the DC / DC converter such that the secondary-side voltage is in a second voltage interval. In this case, this second voltage interval to the first voltage incident on a voltage difference. An associated circuit part of the secondary side detects this voltage difference and interprets this as a switching command in a diagnostic mode.
  • An advantage of the described embodiment of the circuit arrangement and the associated method is that the functionality of the circuit arrangement is extended by the introduction of the diagnostic mode without affecting the known functionality.
  • the diagnostic mode of the secondary side extended in case of failure, a transmission from the secondary side to the primary side of a simple error pulse to a variety of information about the error or on the further status of the secondary side.
  • interference signals are injected into the connection between the primary side and the secondary side, unintentionally generating control signals from the secondary side and may lead to unintentional switching on of the associated power semiconductor switch and thus possibly to its destruction.
  • Fig. 1 shows a circuit arrangement according to the state of the art.
  • Fig. 2 shows a further developed according to the invention circuitry.
  • Fig. 3 schematically shows the voltage ratios of the DC / DC converter on the secondary side.
  • the secondary side is frequently supplied with voltage from the primary side by means of a DC / DC converter (42, 46).
  • a DC / DC converter (42, 46).
  • individual DC / DC converter for each secondary side.
  • DC / DC converters with a primary-side and a plurality of secondary-side windings are likewise likewise known in order to supply a plurality of secondary sides with energy.
  • On and off signals from the primary side (20) to the secondary side (30, 32) can be transmitted with the said components for potential separation.
  • Essential for the trouble-free operation of a power electronic system, however, on the primary side (20) is the knowledge of operating states of the secondary side (30), as an example of occurred errors in the control or the function of the TOP (50) or the BOT switch (52). ,
  • the transmission of information from the secondary side (30, 32) to the primary side (20) is only possible if the primary side explicitly permits this transmission. This happens only when the primary side (20) releases a time window at a defined time interval after a control pulse (switch-on signal). Within this window, the secondary side can then send an error pulse to the primary side. The primary side can thus detect whether there was an error in a local error memory on the secondary side. The primary side does not receive any further information from the secondary side and thus has to take a countermeasure without knowing exactly which error is present.
  • an error case of the secondary side (30, 32) leads to the transmission of an error pulse to the primary side, whereupon triggered primary side all power semiconductor switches are turned off, to turn off signals from the primary side (20) to the secondary side (30, 32) are transmitted.
  • the transmission channels (40, 44) are blocked for a defined period of time, whereby the primary side can not receive any further data from the secondary side (30, 32).
  • the period of blocking is usually determined by the higher-level controller (10).
  • Fig. 2 shows a further developed according to the invention circuit arrangement, which can be realized separately as a primary side (20) and as at least one secondary side (30, 32) as a monolithically integrated circuit arrangement.
  • On the primary side (20) are here more circuit parts, such as an advanced control (204) of the input signal of the DC / DC converter and a circuit part for detecting (202) from the secondary side (30, 32) sent information required.
  • the secondary side must have a circuit part (302) for error and / or status detection, as well as a circuit (304) for determining the voltage transmitted by means of the DC / DC converter (42, 46).
  • the secondary side (30, 32) has in the development according to the invention a plurality of monitoring functions, the results of which are stored in the circuit part (302) for error and / or status detection. As soon as significantly defined errors or other status information are present here, the secondary side (30, 32) transmits an error pulse known from the prior art by means of the transformer (42, 46) to the primary side.
  • This error pulse can now be interpreted by the primary side (20) or by the higher-level control (10), to which this pulse is forwarded in a conditioned form, as an indication of an error or even as a warning signal.
  • the higher-level controller (10) or the primary side (20) switches to the diagnostic mode at an appropriate time.
  • the input voltage of the DC / DC converter (42, 46) is now reduced in a controlled manner from the primary side.
  • Vs output voltage
  • VD diagnostic level
  • the diagnostic level (VD) may also be at higher voltage levels compared to the normal level (VN). This is advantageous because thus a reduction of the voltage is not interpreted as too low supply voltage.
  • each secondary side (30, 32) individually, but advantageously all the secondary sides (30, 32), are set from the primary side (20) in the diagnostic state.
  • all are likewise placed in the diagnostic state.
  • This voltage change of the secondary-side output voltage (Vs) of the DC / DC converter now puts the secondary side (30, 32) in the diagnostic mode, in which no more control of the power semiconductor switches (50, 52) is made.
  • the power semiconductor switches (50, 52) can only return to the normal level (VN), which is between 14V and 18V, after completion of the diagonal mode, ie after a further change in the supply voltage transmitted via the DC / DC converter (42, 46). be controlled again.
  • the error and / or status information obtained from the primary side (20) can now be evaluated directly, by means of circuit arrangements on the primary side, or by means of the superordinate control (10), and corresponding measures derived therefrom can be taken.
  • An advantage of the embodiment of the circuit arrangement according to the invention is that for the bidirectional transmission of a plurality of information between the primary side (20) and the secondary side (30, 32) exclusively by means already existing in the prior art components, such as transformers (40, 44) and DC / DC converters (42, 46) are necessary.
  • the additional circuit parts (202, 204, 302, 304) on the primary side (20) and the secondary side (30, 32) are easy and inexpensive to implement, especially in monolithic integrated circuits.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Transmitters (AREA)
  • Electronic Switches (AREA)

Claims (6)

  1. Dispositif de circuit destiné à attaquer des commutateurs semiconducteurs de puissance (50, 52) ayant une topologie en pont, composés d'un côté primaire (20) et chacun d'un côté secondaire (30, 32) pour le commutateur du dessus (20) et le commutateur du dessous (52) du circuit en pont, au moins un transmetteur (40, 44) par commutateur semiconducteur de puissance (50, 52) asservi, afin de transmettre sans potentiel le signal de commande entre le côté primaire (20) et au moins un côté secondaire (30, 32) et au moins un convertisseur continu-continu (42, 46) pour alimenter le côté secondaire (30, 32) en tension à partir du côté primaire (20), dans lequel il est prévu sur le côté secondaire des éléments de circuit (302) destinés à mémoriser les erreurs et à transmettre les informations d'erreur et/ou d'état entre le côté secondaire et le côté primaire, dans lequel il est prévu sur le côté primaire des éléments de circuit (202) destinés à recueillir les informations d'erreur et/ou d'état transmises entre le côté secondaire (30, 32) et le côté primaire (20) par le transmetteur (42, 46), caractérisé en ce qu'il est prévu sur le côté primaire d'autres éléments de circuit (204) destinés à régler différentes valeurs de tension sur le convertisseur continu-continu et en ce qu'il est prévu sur le côté secondaire d'autres éléments de circuit (304) qui peuvent analyser la tension côté secondaire (VS) du convertisseur continu-continu.
  2. Procédé de transmission d'informations d'erreur et/ou d'état entre le côté secondaire (30, 32) et le côté primaire (20) dans un dispositif de circuit destiné à attaquer des commutateurs semiconducteurs de puissance (50, 52) selon la revendication 1,
    - dans lequel, dans un fonctionnement sans erreur, le côté primaire (20) envoie au côté secondaire (30, 32), via le convertisseur continu-continu (42, 46), de l'énergie ayant une tension côté secondaire située dans un premier intervalle de tension (Vs) et les impulsions de commande des commutateurs semiconducteurs de puissance (50, 52) sont transmises via le transmetteur (42, 46) ;
    - dans lequel, en cas d'erreur, le côté secondaire (30, 32) envoie une impulsion d'erreur au côté primaire (20) via le transmetteur (42, 46) ;
    - après quoi le côté primaire (20), ayant coupé tous les commutateurs semiconducteurs de puissance asservis activement sur ordre de la commande hiérarchiquement supérieure (10), fait varier la transmission d'énergie à l'aide du convertisseur continu-continu (42, 46) de telle manière que la tension côté secondaire (Vs) se situe dans un second intervalle de tension (VD), ce second intervalle de tension (VD) présentant par rapport au premier intervalle de tension (VN) une différence de tension (ΔV) ;
    - dans lequel cette différence de tension (ΔV) est détectée sur le côté secondaire (30, 32) et est interprétée comme un ordre de commutation en mode de diagnostic ; et
    - dans lequel, en mode de diagnostic, le côté secondaire (30, 32) envoie au côté primaire (20) des informations d'erreur et/ou d'état via le transmetteur (42, 46).
  3. Procédé selon la revendication 2, dans lequel, en mode de diagnostic, le côté secondaire (30, 32) n'envoie pas de signaux de commande aux commutateurs semiconducteurs de puissance (50, 52) correspondants.
  4. Procédé selon la revendication 2, dans lequel, en mode de diagnostic, la transmission entre le côté secondaire (30, 32) et le côté primaire (20) est bidirectionnelle.
  5. Procédé selon la revendication 2, dans lequel le premier intervalle de tension (VN) comprend une plage de tensions entre 14 V et 18 V, le second intervalle de tension (VD) comprend une plage de tensions entre 6 V et 8 V et la différence de tension (ΔV) des intervalles est donc de 6 V.
  6. Procédé selon la revendication 2, dans lequel le second intervalle de tension (VD), pour l'activation du mode de diagnostic, se situe au-dessus du premier intervalle de tension (VN).
EP06010910A 2005-06-04 2006-05-27 Circuit avec signalement d'erreurs et procédé associé pour la commande de commutateurs de puissance semi-conducteurs Not-in-force EP1729416B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005025705A DE102005025705B3 (de) 2005-06-04 2005-06-04 Schaltungsanordnung mit Fehlerübermittlung und zugehöriges Verfahren zur Ansteuerung von Leistungshalbleiterschaltern

Publications (3)

Publication Number Publication Date
EP1729416A2 EP1729416A2 (fr) 2006-12-06
EP1729416A3 EP1729416A3 (fr) 2008-07-09
EP1729416B1 true EP1729416B1 (fr) 2009-06-03

Family

ID=36441986

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06010910A Not-in-force EP1729416B1 (fr) 2005-06-04 2006-05-27 Circuit avec signalement d'erreurs et procédé associé pour la commande de commutateurs de puissance semi-conducteurs

Country Status (5)

Country Link
EP (1) EP1729416B1 (fr)
AT (1) ATE433225T1 (fr)
DE (2) DE102005025705B3 (fr)
DK (1) DK1729416T3 (fr)
ES (1) ES2325414T3 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006032392B4 (de) * 2006-06-14 2011-11-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur galvanisch getrennten Informations- und Energieübertragung zwischen zwei elektronischen Schaltungseinheiten
DE102010029177A1 (de) * 2010-05-20 2011-11-24 Semikron Elektronik Gmbh & Co. Kg Treiber für ein Leistungshalbleitermodul
DE112013006773T5 (de) * 2013-03-06 2015-12-10 SiEVA Vorrichtung für high-side Transistor-Brückentreiber

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63133819A (ja) * 1986-11-11 1988-06-06 シーメンス、アクチエンゲゼルシヤフト 自己保護性電力開閉器の回路装置
DE4007539A1 (de) * 1990-03-09 1991-09-12 Asea Brown Boveri Ansteuerschaltung fuer einen leistungshalbleiterschalter
GB9421402D0 (en) * 1994-10-21 1994-12-07 Plessey Semiconductors Ltd Power switch driver

Also Published As

Publication number Publication date
EP1729416A2 (fr) 2006-12-06
DK1729416T3 (da) 2009-09-07
ES2325414T3 (es) 2009-09-03
EP1729416A3 (fr) 2008-07-09
ATE433225T1 (de) 2009-06-15
DE502006003859D1 (de) 2009-07-16
DE102005025705B3 (de) 2006-06-08

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