EP1719201B1 - Mikrowelleneinrichtung des schlitz-linien-typs mit einer struktur des photonischen bandabstands - Google Patents

Mikrowelleneinrichtung des schlitz-linien-typs mit einer struktur des photonischen bandabstands Download PDF

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Publication number
EP1719201B1
EP1719201B1 EP05717648.9A EP05717648A EP1719201B1 EP 1719201 B1 EP1719201 B1 EP 1719201B1 EP 05717648 A EP05717648 A EP 05717648A EP 1719201 B1 EP1719201 B1 EP 1719201B1
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EP
European Patent Office
Prior art keywords
slot
substrate
line
patterns
band gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
EP05717648.9A
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English (en)
French (fr)
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EP1719201A2 (de
Inventor
Nicolas Boisbouvier
Ali Louzir
Françoise Le Bolzer
Anne-Claude Tarot
Kouroch Mahdjoubi
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THOMSON LICENSING
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Thomson Licensing SAS
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Publication date
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Publication of EP1719201A2 publication Critical patent/EP1719201A2/de
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/2005—Electromagnetic photonic bandgaps [EPB], or photonic bandgaps [PBG]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/18—Waveguides; Transmission lines of the waveguide type built-up from several layers to increase operating surface, i.e. alternately conductive and dielectric layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/2016—Slot line filters; Fin line filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08—Microstrips; Strip lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/16—Dielectric waveguides, i.e. without a longitudinal conductor

Definitions

  • the present invention relates to a novel microwave device of the slot line or slot-based structure type (slot-line, wiggly slotline, ...) comprising at least one photonic band gap structure (BIP).
  • slot line or slot-based structure type slot-line, wiggly slotline, ...) comprising at least one photonic band gap structure (BIP).
  • BIP photonic band gap structure
  • the photonic band gap structures known more generally under the term "Photonic Band Gap Structure” or PBG in English, are periodic structures that prohibit the propagation of waves for certain frequency bands. It is notably known from the patent US 6,577,211 B1 performing a periodic structure by demetallizing a ground plane electrode and using this structure to form a filter. In recent years, research and studies have been carried out for the use of these structures in frequency ranges such as those used in microwave devices.
  • such a microwave device comprises a substrate 1, a face 2 has been metallized.
  • a slot line 3 is made by etching the metal layer.
  • the substrate 1 has a height h and is made of a known dielectric material such as the materials known under the name "Ro4003" or "FR4", the metal layer being preferably made of copper or any other conductive material.
  • the BIP structure is obtained by producing patterns 4, namely pellets, on the face of the substrate 1 opposite to the face carrying the metal layer 2.
  • the patterns or pellets 4 are generally made by etching a metal layer and are opposite the line-slot 3.
  • the patterns 4 repeat periodically and are spaced apart by a distance which gives the repetition period of the pattern. This distance sets the center frequency of the forbidden band when the patterns are identical.
  • the distance a is of the order of k ⁇ g / 2 where ⁇ g is the guided wavelength in line-slot 3 at the central frequency of the photonic forbidden band and k is a positive integer greater than or equal to 1.
  • Pattern 4 may be of any shape. However, the equivalent area of the pattern determines the width and / or depth of the band gap.
  • the present invention relates to an improvement to the above structure.
  • This enhancement makes it possible, among other the effect of the photonic forbidden band, taking full advantage of the line-slot on which the BIP structure intervenes.
  • it is possible to increase the rejection of the forbidden band, or, constant rejection, to minimize the bulk of the structure.
  • the use of two different substrates offers an additional degree of freedom for adjusting the rejection of the filter as well as the center frequency and the width of the forbidden band.
  • the permittivities ⁇ r1 and ⁇ r2 of the first and second substrates may be equal or different.
  • the period between two metallic patterns is equal to k ⁇ g / 2 where ⁇ g is the guided wavelength in the slot at the center frequency of the photonic forbidden band and k is a positive integer greater than or equal to 1.
  • the periodic patterns have an equivalent area depending on the width and depth of the band gap.
  • the period of the patterns made on the first substrate is identical to the period of the patterns made on the second substrate.
  • the periodic patterns made on the first substrate are opposite patterns made on the second substrate or, alternatively, the patterns made on the first substrate. are offset with respect to the periodic patterns made on the second substrate.
  • the photonic bandgap structure described above can be used with a slot line etched in the conductive layer, this line-slot having a width varying according to a periodic law.
  • This form of line-slot is known under the name "Wiggly-slotline”.
  • this structure can be used with any other device based on line slot (filter, ).
  • this invention makes it possible to reinforce the filtering function.
  • a first microwave device is schematically represented on the Figures 3A and 3B . More specifically, this device comprises a first substrate 10 made of a dielectric material such as the Rogers Ro4003. This first substrate has a permittivity ⁇ r1.
  • one of the faces of the substrate 10 has been covered with a conductive layer 12, more particularly with a metal layer such as a copper layer in which a line-slot 13 has been etched.
  • a second substrate 11 of dielectric material having a permittivity ⁇ r2 has been deposited under the layer 12.
  • the permittivities ⁇ r1 and ⁇ r2 of the two substrates may be identical or different.
  • the use of a different permittivity gives an additional degree of freedom in the realization of the desired filter in terms of rejection, width and central frequency of the forbidden band.
  • the fact of using two different substrates modifies ⁇ eff seen by the line; this value is involved in the relationship between the central frequency of the forbidden band and the design of the BIP structure.
  • a first photonic bandgap structure formed by metal patterns 14 etched on the face of the first substrate 10 opposite the face carrying the metal layer 12.
  • the patterns 14 are constituted, in the embodiment shown, by disc-shaped pellets, namely five metal pellets.
  • the pellets 14 are spaced a distance a 'which gives the repetition period of the pattern. This distance sets the center frequency of the forbidden band when the patterns are identical.
  • the distance a 'between the patterns is of the order of k' ⁇ g / 2 where ⁇ g is the guided wavelength in the slot 13 at the central frequency of the chosen forbidden band and k' is a positive integer greater than or equal to 1.
  • periodic metal patterns 15 have been etched on the face of the substrate 11 opposite the face in contact with the metal layer 12.
  • This structure formed by the patterns 15 is, in this embodiment, identical to the structure formed by the patterns. 14 and patterns 14 and 15 are opposite each other.
  • identical patterns were made on both sides of the slot 13, ie the space between the patterns 14 or 15 and the number of patterns was retained.
  • a device as represented in Figures 3A and 3B was simulated by directly exciting the slit line.
  • the parameters S of transmission and reflection are presented to the figure 4 .
  • the forbidden band has a width of 1.4 GHz and is centered at 8.3 GHz. This band is therefore wider than the band obtained with a device according to the Figures 1A and 1B .
  • central frequency rejection of the forbidden band is then -23dB, an improvement of 6dB compared to the structure of the Figures 1A and 1B .
  • the line-slot 21 made in the metal layer 20 is constituted by a line having a width modulated periodically.
  • the modulations are constituted by circles 21A spaced periodically on the line 21.
  • a dielectric substrate On the face of the substrate opposite the face carrying the layer 20 have been formed photonic bandgap structures constituted by metal pellets 22 spaced periodically vis-à-vis the slot 21, according to a period. was simulated using for the period a ", a value of 12.7 mm, this periodicity being used also for the circles 21 a. On the other hand, for the simulation, the line has twelve circles 21 a.
  • the device consists of two substrates 30, 31 in a dielectric material having respective permittivities ⁇ r1 and ⁇ r2. Between the two substrates is provided a metal layer 32 in which was made by etching a line-slot 33. On the faces opposite to the face in contact with the layer 32, were made photonic bandgap structures 34 and 35.
  • the photonic bandgap structure 35 is constituted by patterns spaced from each other by a distance a 1 which gives the periodicity of the patterns.
  • the patterns 34 also have a periodicity to 1 but they are not vis-à-vis the patterns 35. The patterns are actually shifted above and below the slit line.
  • the effect is rather complex.
  • shifting the metal pellets can be seen as a modification of the shape / surface of the elementary cell especially when the pellets above and below the slot line partially overlap.
  • the gap between the layer of metal pellets above and below the slot line offers an additional degree of freedom whether with two identical or different substrates.
  • the present invention has been described with reference to disk-shaped patterns. However, the invention also applies to patterns of any shape, knowing that the equivalent surface of the pattern determines the width and / or depth of the band gap.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Details Of Aerials (AREA)

Claims (7)

  1. Mikrowellenbauelement vom Schlitzleitungstyp mit photonischer Bandlückenstruktur (PBG- (Photonic Band Gap) Struktur), das eine Filterung oder Frequenzanpassung ausführt, mit
    - einem ersten Substrat (10, 30) aus einem dielektrischen Material, das eine erste Dielektrizitätskonstante εr1 aufweist,
    dadurch gekennzeichnet, dass es mindestens Folgendes umfasst:
    - ein zweites Substrat (11, 31) aus einem dielektrischen Material, das eine zweite Dielektrizitätskonstante εr2 aufweist, die von der ersten Dielektrizitätskonstanten εr1 verschieden ist,
    - eine zwischen dem ersten und dem zweiten Substrat angeordnete leitende Schicht (12, 20, 32), in die eine Schlitzleitung ((13, 21, 33) geätzt ist,
    - mit periodischen Metallstrukturmotiven (14, 15, 22; 34, 31) gegenüber der Schlitzleitung, an jeder Fläche des ersten und zweiten Substrats, die der Fläche des ersten bzw. zweiten Substrats in Kontakt mit der leitfähigen Schicht gegenüberliegt.
  2. Bauelement nach Anspruch 1, dadurch gekennzeichnet, dass die Periode zwischen zwei Metallstrukturmotiven gleich kλg/2 oder λg ist, wobei λg die Länge einer in dem Schlitz geführten Welle bei der Mittenfrequenz der photonischen Bandlücke ist und k eine positive ganze Zahl größer oder gleich 1 ist.
  3. Bauelement nach einem der Ansprüche 1 oder 2, dadurch gekennzeichnet, dass die periodischen Strukturmotive eine Wirkfläche aufweisen, die durch die Breite und/oder die Tiefe der Bandlücke bestimmt ist.
  4. Bauelement nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass die Periode der auf dem ersten Substrat verwirklichten Strukturmotive gleich der Periode der auf dem zweiten Substrat verwirklichten Strukturmotive ist.
  5. Bauelement nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass die auf dem ersten Substrat verwirklichten periodischen Strukturmotive den auf dem zweiten Substrat verwirklichten periodischen Strukturmotiven gegenüberliegen.
  6. Bauelement nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass die auf dem ersten Substrat verwirklichten periodischen Strukturmotive im Vergleich zu den auf dem zweiten Substrat verwirklichten periodischen Strukturmotiven versetzt sind.
  7. Bauelement nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, dass die Schlitzleitung, die in die leitfähige Schicht geätzt ist, eine periodisch modulierte Breite aufweist.
EP05717648.9A 2004-01-07 2005-01-03 Mikrowelleneinrichtung des schlitz-linien-typs mit einer struktur des photonischen bandabstands Expired - Fee Related EP1719201B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0450036A FR2864864B1 (fr) 2004-01-07 2004-01-07 Dispositif micro-ondes du type ligne-fente avec un structure a bandes interdites photoniques
PCT/FR2005/050001 WO2005067094A2 (fr) 2004-01-07 2005-01-03 Dispositif micro-ondes du type ligne-fente avec une structure a bandes interdites photoniques

Publications (2)

Publication Number Publication Date
EP1719201A2 EP1719201A2 (de) 2006-11-08
EP1719201B1 true EP1719201B1 (de) 2013-07-31

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Country Status (7)

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US (1) US8264304B2 (de)
EP (1) EP1719201B1 (de)
JP (1) JP4448143B2 (de)
KR (1) KR101126652B1 (de)
CN (1) CN1954458A (de)
FR (1) FR2864864B1 (de)
WO (1) WO2005067094A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100588030C (zh) * 2005-08-31 2010-02-03 同济大学 一种具有微带闭合环路的光子晶体微带线
US8766855B2 (en) * 2010-07-09 2014-07-01 Semiconductor Components Industries, Llc Microstrip-fed slot antenna

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6577211B1 (en) * 1999-07-13 2003-06-10 Murata Manufacturing Co., Ltd. Transmission line, filter, duplexer and communication device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0617476B1 (de) * 1992-10-14 2000-03-29 Matsushita Electric Industrial Co., Ltd. Filter und verfahren zu seiner herstellung
JP3140385B2 (ja) 1996-12-18 2001-03-05 京セラ株式会社 高周波用半導体装置
JP3439969B2 (ja) 1997-12-15 2003-08-25 京セラ株式会社 高周波用入出力端子ならびに高周波用半導体素子収納用パッケージ
JP3440909B2 (ja) * 1999-02-23 2003-08-25 株式会社村田製作所 誘電体共振器、インダクタ、キャパシタ、誘電体フィルタ、発振器、誘電体デュプレクサおよび通信装置
FR2797352B1 (fr) * 1999-08-05 2007-04-20 Cit Alcatel Antenne a empilement de structures resonantes et dispositif de radiocommunication multifrequence incluant cette antenne
JP3521834B2 (ja) * 2000-03-07 2004-04-26 株式会社村田製作所 共振器、フィルタ、発振器、デュプレクサおよび通信装置
JP3735510B2 (ja) * 2000-04-18 2006-01-18 株式会社村田製作所 伝送線路接続構造、高周波モジュールおよび通信装置
US6518930B2 (en) * 2000-06-02 2003-02-11 The Regents Of The University Of California Low-profile cavity-backed slot antenna using a uniplanar compact photonic band-gap substrate
FR2845828B1 (fr) * 2002-10-11 2008-08-22 Thomson Licensing Sa Procede de realisation d'une structure a bandes interdites photoniques(bip) sur un dispositif micro-ondes et antennes du type fente utilisant une telle structure
US7277065B2 (en) * 2003-09-02 2007-10-02 Jay Hsing Wu Tunable photonic band gap structures for microwave signals

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6577211B1 (en) * 1999-07-13 2003-06-10 Murata Manufacturing Co., Ltd. Transmission line, filter, duplexer and communication device

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Publication number Publication date
EP1719201A2 (de) 2006-11-08
US20100039190A1 (en) 2010-02-18
WO2005067094A2 (fr) 2005-07-21
US8264304B2 (en) 2012-09-11
CN1954458A (zh) 2007-04-25
FR2864864B1 (fr) 2006-03-17
JP2007518329A (ja) 2007-07-05
KR101126652B1 (ko) 2012-03-26
JP4448143B2 (ja) 2010-04-07
FR2864864A1 (fr) 2005-07-08
WO2005067094A3 (fr) 2006-09-21
KR20060126689A (ko) 2006-12-08

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