EP1667209A4 - Soi-wafer und verfahren zu seiner herstellung - Google Patents

Soi-wafer und verfahren zu seiner herstellung

Info

Publication number
EP1667209A4
EP1667209A4 EP04787753A EP04787753A EP1667209A4 EP 1667209 A4 EP1667209 A4 EP 1667209A4 EP 04787753 A EP04787753 A EP 04787753A EP 04787753 A EP04787753 A EP 04787753A EP 1667209 A4 EP1667209 A4 EP 1667209A4
Authority
EP
European Patent Office
Prior art keywords
manufacturing
soi wafer
soi
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP04787753A
Other languages
English (en)
French (fr)
Other versions
EP1667209A1 (de
EP1667209B1 (de
Inventor
Akihiko Endo
Nobuyuki Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of EP1667209A1 publication Critical patent/EP1667209A1/de
Publication of EP1667209A4 publication Critical patent/EP1667209A4/de
Application granted granted Critical
Publication of EP1667209B1 publication Critical patent/EP1667209B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP04787753A 2003-09-08 2004-09-08 Verfahren zur herstellung eines soi-wafers Expired - Lifetime EP1667209B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003315990 2003-09-08
PCT/JP2004/013070 WO2005024918A1 (ja) 2003-09-08 2004-09-08 Ｓｏｉウェーハおよびその製造方法

Publications (3)

Publication Number Publication Date
EP1667209A1 EP1667209A1 (de) 2006-06-07
EP1667209A4 true EP1667209A4 (de) 2009-12-30
EP1667209B1 EP1667209B1 (de) 2012-05-09

Family

ID=34269836

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04787753A Expired - Lifetime EP1667209B1 (de) 2003-09-08 2004-09-08 Verfahren zur herstellung eines soi-wafers

Country Status (4)

Country Link
US (1) US7544583B2 (de)
EP (1) EP1667209B1 (de)
JP (1) JP4552857B2 (de)
WO (1) WO2005024918A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1662555B1 (de) * 2003-09-05 2011-04-13 SUMCO Corporation Verfahren zur herstellung eines soi-wafers
WO2005024916A1 (ja) * 2003-09-05 2005-03-17 Sumco Corporation Ｓｏｉウェーハの作製方法
DE102004041378B4 (de) * 2004-08-26 2010-07-08 Siltronic Ag Halbleiterscheibe mit Schichtstruktur mit geringem Warp und Bow sowie Verfahren zu ihrer Herstellung
JP4716372B2 (ja) * 2005-09-27 2011-07-06 コバレントマテリアル株式会社 シリコンウエハの製造方法
JP5082299B2 (ja) * 2006-05-25 2012-11-28 株式会社Ｓｕｍｃｏ 半導体基板の製造方法
JP2008004900A (ja) * 2006-06-26 2008-01-10 Sumco Corp 貼り合わせウェーハの製造方法
JP2008066500A (ja) * 2006-09-07 2008-03-21 Sumco Corp 貼り合わせウェーハおよびその製造方法
WO2008105101A1 (ja) 2007-02-28 2008-09-04 Shin-Etsu Chemical Co., Ltd. 貼り合わせ基板の製造方法および貼り合わせ基板
JP2009295695A (ja) * 2008-06-03 2009-12-17 Sumco Corp 半導体薄膜付基板およびその製造方法
JP5263509B2 (ja) * 2008-09-19 2013-08-14 信越半導体株式会社 貼り合わせウェーハの製造方法
JP2010114409A (ja) * 2008-10-10 2010-05-20 Sony Corp Ｓｏｉ基板とその製造方法、固体撮像装置とその製造方法、および撮像装置
JP6531743B2 (ja) * 2016-09-27 2019-06-19 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0475653A2 (de) * 1990-09-06 1992-03-18 Shin-Estu Handotai Company Limited Gelöteter Wafer und Verfahren zu dessen Herstellung
JPH0964319A (ja) * 1995-08-28 1997-03-07 Toshiba Corp Ｓｏｉ基板およびその製造方法
EP0969505A2 (de) * 1998-06-02 2000-01-05 Shin-Etsu Handotai Company Limited SOI Substrat
JP2000031439A (ja) * 1998-07-13 2000-01-28 Fuji Electric Co Ltd Ｓｏｉ基板およびその製造方法
EP1045448A1 (de) * 1998-10-16 2000-10-18 Shin-Etsu Handotai Co., Ltd Verfahren zur herstellung von einem soi-wafer mittels trennung durch wasserstoffimplantierung und dadurch hergestelltes soi-wafer
WO2003005434A2 (fr) * 2001-07-04 2003-01-16 S.O.I.Tec Silicon On Insulator Technologies Procede de diminution de la rugosite de surface d'une tranche semicondutrice

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0633235B2 (ja) 1989-04-05 1994-05-02 新日本製鐵株式会社 酸化膜耐圧特性の優れたシリコン単結晶及びその製造方法
JPH09326396A (ja) 1996-06-04 1997-12-16 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP3994602B2 (ja) 1999-11-12 2007-10-24 信越半導体株式会社 シリコン単結晶ウエーハおよびその製造方法並びにｓｏｉウエーハ
US6709957B2 (en) * 2001-06-19 2004-03-23 Sumitomo Mitsubishi Silicon Corporation Method of producing epitaxial wafers
KR20040037031A (ko) * 2001-06-22 2004-05-04 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 이온 주입에 의한 고유 게터링을 갖는 실리콘 온인슐레이터 구조 제조 방법
JP2004006615A (ja) * 2002-04-26 2004-01-08 Sumitomo Mitsubishi Silicon Corp 高抵抗シリコンウエーハ及びその製造方法
TW200428637A (en) * 2003-01-23 2004-12-16 Shinetsu Handotai Kk SOI wafer and production method thereof
JP5023451B2 (ja) * 2004-08-25 2012-09-12 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法、シリコン単結晶育成方法
JP2006216826A (ja) * 2005-02-04 2006-08-17 Sumco Corp Ｓｏｉウェーハの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0475653A2 (de) * 1990-09-06 1992-03-18 Shin-Estu Handotai Company Limited Gelöteter Wafer und Verfahren zu dessen Herstellung
JPH0964319A (ja) * 1995-08-28 1997-03-07 Toshiba Corp Ｓｏｉ基板およびその製造方法
EP0969505A2 (de) * 1998-06-02 2000-01-05 Shin-Etsu Handotai Company Limited SOI Substrat
JP2000031439A (ja) * 1998-07-13 2000-01-28 Fuji Electric Co Ltd Ｓｏｉ基板およびその製造方法
EP1045448A1 (de) * 1998-10-16 2000-10-18 Shin-Etsu Handotai Co., Ltd Verfahren zur herstellung von einem soi-wafer mittels trennung durch wasserstoffimplantierung und dadurch hergestelltes soi-wafer
WO2003005434A2 (fr) * 2001-07-04 2003-01-16 S.O.I.Tec Silicon On Insulator Technologies Procede de diminution de la rugosite de surface d'une tranche semicondutrice

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2005024918A1 *

Also Published As

Publication number Publication date
JP4552857B2 (ja) 2010-09-29
EP1667209A1 (de) 2006-06-07
JPWO2005024918A1 (ja) 2007-11-08
US7544583B2 (en) 2009-06-09
WO2005024918A1 (ja) 2005-03-17
EP1667209B1 (de) 2012-05-09
US20070026637A1 (en) 2007-02-01

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