EP1646093A3 - Reflective electrode and compound semiconductor light emitting device including the same - Google Patents

Reflective electrode and compound semiconductor light emitting device including the same Download PDF

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Publication number
EP1646093A3
EP1646093A3 EP05253838A EP05253838A EP1646093A3 EP 1646093 A3 EP1646093 A3 EP 1646093A3 EP 05253838 A EP05253838 A EP 05253838A EP 05253838 A EP05253838 A EP 05253838A EP 1646093 A3 EP1646093 A3 EP 1646093A3
Authority
EP
European Patent Office
Prior art keywords
compound semiconductor
light emitting
emitting device
semiconductor light
reflective electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05253838A
Other languages
German (de)
French (fr)
Other versions
EP1646093A2 (en
Inventor
Mi-Yang Kim
Joon-seop 860 Banwol-ri Kwak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of EP1646093A2 publication Critical patent/EP1646093A2/en
Publication of EP1646093A3 publication Critical patent/EP1646093A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1078—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with means to control the spontaneous emission, e.g. reducing or reinjection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Biophysics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Provided are a reflective electrode and a compound semiconductor light emitting device having the reflective electrode, such as LED or LD is provided. The reflective electrode formed on a p-type compound semiconductor layer of a compound semiconductor light emitting device, comprising a first electrode layer formed one of a Ag and Ag-alloy and forms an ohmic contact with the p-type compound semiconductor layer, a third electrode layer formed of a material selected from the group consisting of Ni, Ni-alloy, Zn, Zn-alloy, Cu, Cu-alloy, Ru, Ir, and Rh on the first electrode layer, and a fourth electrode layer formed of a light reflective material on the third electrode layer.
EP05253838A 2004-10-07 2005-06-21 Reflective electrode and compound semiconductor light emitting device including the same Withdrawn EP1646093A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040079963A KR100773538B1 (en) 2004-10-07 2004-10-07 Reflective electrode and compound semiconductor light emitting device including the same

Publications (2)

Publication Number Publication Date
EP1646093A2 EP1646093A2 (en) 2006-04-12
EP1646093A3 true EP1646093A3 (en) 2008-10-22

Family

ID=36179807

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05253838A Withdrawn EP1646093A3 (en) 2004-10-07 2005-06-21 Reflective electrode and compound semiconductor light emitting device including the same

Country Status (5)

Country Link
US (1) US7973325B2 (en)
EP (1) EP1646093A3 (en)
JP (1) JP2006108683A (en)
KR (1) KR100773538B1 (en)
CN (1) CN1758455A (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100624416B1 (en) * 2003-12-23 2006-09-18 삼성전자주식회사 flip-chip light emitting diodes and method of manufacturing thereof
US7960746B2 (en) * 2004-01-06 2011-06-14 Samsung Led Co., Ltd. Low resistance electrode and compound semiconductor light emitting device including the same
KR100836494B1 (en) 2006-12-26 2008-06-09 엘지이노텍 주식회사 Semiconductor light emitting device
US7888700B2 (en) * 2007-03-08 2011-02-15 Eastman Kodak Company Quantum dot light emitting device
US20090250713A1 (en) * 2008-04-04 2009-10-08 Philips Lumileds Lighting Company, Llc Reflective Contact for a Semiconductor Light Emitting Device
KR101047729B1 (en) * 2008-07-22 2011-07-08 엘지이노텍 주식회사 Light emitting device package and its manufacturing method
KR101018197B1 (en) * 2008-10-22 2011-02-28 삼성엘이디 주식회사 Semiconductor Light Emitting Device
JP2010109013A (en) * 2008-10-28 2010-05-13 Sanyo Electric Co Ltd Semiconductor laser device and method of manufacturing the same
EP2226853B1 (en) 2008-11-06 2014-02-26 Panasonic Corporation Nitride semiconductor element and method for manufacturing the same
KR101068864B1 (en) 2008-12-03 2011-09-30 삼성엘이디 주식회사 Semiconductor light emitting device and menufacturing method thereof
WO2010113237A1 (en) * 2009-04-03 2010-10-07 パナソニック株式会社 Nitride semiconductor element and method for manufacturing same
US20100327300A1 (en) 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
JP4843122B2 (en) 2009-12-25 2011-12-21 パナソニック株式会社 Nitride-based semiconductor device and manufacturing method thereof
FR2957718B1 (en) * 2010-03-16 2012-04-20 Commissariat Energie Atomique HYBRID HIGH PERFORMANCE ELECTROLUMINESCENT DIODE
WO2011125290A1 (en) 2010-04-02 2011-10-13 パナソニック株式会社 Nitride semiconductor element and manufacturing method therefor
CN102214762A (en) * 2010-04-06 2011-10-12 尚安品有限公司 LED (light-emitting diode) chip and packaging structure thereof
KR101289602B1 (en) * 2011-04-21 2013-07-24 영남대학교 산학협력단 Light emitting diode
US9818912B2 (en) 2011-12-12 2017-11-14 Sensor Electronic Technology, Inc. Ultraviolet reflective contact
JP6167109B2 (en) 2011-12-12 2017-07-19 センサー エレクトロニック テクノロジー インコーポレイテッド UV reflective contact
KR102036942B1 (en) * 2012-02-24 2019-10-25 스카이워크스 솔루션즈, 인코포레이티드 Improved structures, devices and methods related to copper interconnects for compound semiconductors
US9287449B2 (en) 2013-01-09 2016-03-15 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
US9768357B2 (en) 2013-01-09 2017-09-19 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
US10276749B2 (en) 2013-01-09 2019-04-30 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
EP2881982B1 (en) * 2013-12-05 2019-09-04 IMEC vzw Method for fabricating cmos compatible contact layers in semiconductor devices
CN104319621B (en) * 2014-10-29 2017-05-10 山东华光光电子股份有限公司 Ohmic contact metal electrode of chip of semiconductor laser and manufacturing method of ohmic contact metal electrode
JP2016174047A (en) * 2015-03-16 2016-09-29 株式会社東芝 Semiconductor light emitting element
CN117448819B (en) * 2023-12-22 2024-03-19 墨卓生物科技(浙江)有限公司 Metal electrode for chip and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0926744A2 (en) * 1997-12-15 1999-06-30 Hewlett-Packard Company Light emitting device
JPH11220171A (en) * 1998-02-02 1999-08-10 Toyoda Gosei Co Ltd Gallium nitride compound semiconductor device
DE19921987A1 (en) * 1998-05-13 1999-11-18 Toyoda Gosei Kk Light-radiating flip chip semiconductor device
US20030222270A1 (en) * 2002-05-31 2003-12-04 Toshiya Uemura Group III nitride compound semiconductor light-emitting element

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2658009B2 (en) * 1991-07-23 1997-09-30 豊田合成株式会社 Gallium nitride based compound semiconductor light emitting device
JP2778349B2 (en) 1992-04-10 1998-07-23 日亜化学工業株式会社 Gallium nitride based compound semiconductor electrodes
JPH0645651A (en) 1992-05-22 1994-02-18 Sanyo Electric Co Ltd Electrode for n-type sic and its formation
US5777350A (en) * 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
JP3620926B2 (en) * 1995-06-16 2005-02-16 豊田合成株式会社 P-conducting group III nitride semiconductor electrode, electrode forming method and device
JP3292044B2 (en) 1996-05-31 2002-06-17 豊田合成株式会社 P-conductivity group III nitride semiconductor electrode pad, device having the same, and device manufacturing method
JPH114020A (en) * 1997-04-15 1999-01-06 Toshiba Corp Semiconductor light-emitting element, manufacture thereof and semiconductor light-emitting device
JP4118371B2 (en) 1997-12-15 2008-07-16 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー Nitride semiconductor light emitting device having silver as electrode, method for manufacturing the same, and semiconductor optoelectronic device
US6936859B1 (en) * 1998-05-13 2005-08-30 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
US6992334B1 (en) 1999-12-22 2006-01-31 Lumileds Lighting U.S., Llc Multi-layer highly reflective ohmic contacts for semiconductor devices
US6573537B1 (en) 1999-12-22 2003-06-03 Lumileds Lighting, U.S., Llc Highly reflective ohmic contacts to III-nitride flip-chip LEDs
US6514782B1 (en) * 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
JP4024994B2 (en) 2000-06-30 2007-12-19 株式会社東芝 Semiconductor light emitting device
JP2003168823A (en) 2001-09-18 2003-06-13 Toyoda Gosei Co Ltd Iii nitride based compound semiconductor light emitting element
KR20040006056A (en) * 2002-07-09 2004-01-24 엘지이노텍 주식회사 Light emitting diode and method for processing flip chip of led
DE10244200A1 (en) * 2002-09-23 2004-04-08 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component
TWI243488B (en) * 2003-02-26 2005-11-11 Osram Opto Semiconductors Gmbh Electrical contact-area for optoelectronic semiconductor-chip and its production method
JP4062171B2 (en) * 2003-05-28 2008-03-19 ソニー株式会社 Manufacturing method of laminated structure
US6969874B1 (en) * 2003-06-12 2005-11-29 Sandia Corporation Flip-chip light emitting diode with resonant optical microcavity
KR100624416B1 (en) * 2003-12-23 2006-09-18 삼성전자주식회사 flip-chip light emitting diodes and method of manufacturing thereof
KR100631840B1 (en) * 2004-06-03 2006-10-09 삼성전기주식회사 Nitride semiconductor light emitting device for flip chip

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0926744A2 (en) * 1997-12-15 1999-06-30 Hewlett-Packard Company Light emitting device
JPH11220171A (en) * 1998-02-02 1999-08-10 Toyoda Gosei Co Ltd Gallium nitride compound semiconductor device
DE19921987A1 (en) * 1998-05-13 1999-11-18 Toyoda Gosei Kk Light-radiating flip chip semiconductor device
US20030222270A1 (en) * 2002-05-31 2003-12-04 Toshiya Uemura Group III nitride compound semiconductor light-emitting element

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HIBBARD D L ET AL: "Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, vol. 83, no. 2, 14 July 2003 (2003-07-14), pages 311 - 313, XP012035464, ISSN: 0003-6951 *
SONG J-O ET AL: "LOW-RESISTANCE AND HIGHLY-REFLECTIVE ZN-NI SOLID SOLUTION/AG OHMIC CONTACTS FOR FLIP-CHIP LIGHT-EMITTING DIODES", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, vol. 83, no. 24, 15 December 2003 (2003-12-15), pages 4990 - 4992, XP001194988, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
US7973325B2 (en) 2011-07-05
EP1646093A2 (en) 2006-04-12
CN1758455A (en) 2006-04-12
KR100773538B1 (en) 2007-11-07
US20060081867A1 (en) 2006-04-20
KR20060031079A (en) 2006-04-12
JP2006108683A (en) 2006-04-20

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