CN104319621B - Ohmic contact metal electrode of chip of semiconductor laser and manufacturing method of ohmic contact metal electrode - Google Patents
Ohmic contact metal electrode of chip of semiconductor laser and manufacturing method of ohmic contact metal electrode Download PDFInfo
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- CN104319621B CN104319621B CN201410594611.3A CN201410594611A CN104319621B CN 104319621 B CN104319621 B CN 104319621B CN 201410594611 A CN201410594611 A CN 201410594611A CN 104319621 B CN104319621 B CN 104319621B
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Abstract
The invention provides an ohmic contact metal electrode of a chip of a semiconductor laser and a manufacturing method of the ohmic contact metal electrode. The ohmic contact metal electrode comprises a contact metal layer set, a protective metal layer and an insulating layer, wherein the contact metal layer set, the protective metal layer and the insulating layer are sequentially arranged from bottom to top, and a welding metal layer set covers the contact metal layer set and the insulating layer. According to the manufacturing method of the ohmic contact metal electrode, the contact metal layer set and the protective metal layer are evaporated on the chip of the semiconductor laser in sequence, vapor deposition is carried out on the insulating layer, and then the welding metal layer set is evaporated. Through the ohmic contact metal electrode of the chip of the semiconductor laser and the manufacturing method of the ohmic contact metal electrode, defective holes among metal layers can be eliminated, adhesive force among metal is increased, ohmic contact performance, thermal fatigue resistance and heat dissipation performance of devices are improved, the ohmic contact metal electrode has the advantages of being good in adhesion, small in stress among the metal layers, resistant to thermal fatigue and high in impact resistance, electric conduction performance and heat conductive performance of the ohmic contact metal electrode can be effectively improved, and therefore the ohmic contact performance, the heat dissipation performance and the reliability of the chip of the semiconductor laser are improved, and the service life of the chip of the semiconductor laser is prolonged.
Description
Technical field
The present invention relates to a kind of Ohm contact electrode of semiconductor laser chip and preparation method thereof, belongs to quasiconductor and swashs
Light device technical field.
Background technology
Prepared by Ohm contact electrode is requisite technique in semiconductor device manufacture, while being also very important work
Skill, the quality of its technique, not only affect semiconductor device photoelectric transformation efficiency, can also directly affect device reliability and
Life-span.
The characteristic of temperature noise spectra of semiconductor lasers affects very big, its mainly affect Laser Devices average optical transmit power,
The linear of P-I characteristics, operation wavelength and service life.Especially middle high power semiconductor lasers part heat consumption accounts for total power consumption
50%-75%, if can not radiate in time, can be such that the temperature of chip drastically raises, output degradation, and wavelength increases, the longevity
Life is reduced.So the performance and stability of the fine or not noise spectra of semiconductor lasers of heat-sinking capability are particularly important.
In the production process of semiconductor device, in order to improve parameter, the Performance And Reliability of device, it is not disposable
The preparation of all P faces smithcraft is completed in evaporation or sputtering equipment within the chamber, is often being deposited with or is being sputtered once gold
After category technique, figure, mask protection or other semiconductor process steps can be prepared through similar, then can be deposited with again
Or splash-proofing sputtering metal technique.The formation of even some final electrodes of semiconductor device product is through three times or multiple smithcraft,
And every time between smithcraft, inevitable metal surface all can have contact with other nonmetallic substances, then carry out two again
Before secondary or many minor metals, metal surface easily remains nonmetallic substance thin film, so as to affect the contact between metal, metal level
Between easily there is hole, loose contact, stick the quality problems such as abnormal, the contact of metallic film and heat dispersion will necessarily be big
It is big to reduce, have a strong impact on ohm contact performance, the Thermal fatigue properties of semiconductor device, so as to cause device photoelectric properties,
Stability and the reduction in life-span.
And for semiconductor laser, especially small light spot semiconductor laser, general Ohm contact electrode region is compared
It is little, welding is difficult to very much, so universal technique is an aspect to be prepared using dielectric film protection on Ohm contact electrode to accumulate more
Welded encapsulation technique of the big weld metal layers for the later stage.So Jing is frequently with secondary or even repeatedly prepare metal in production
Technique, and the contact problems of metal interlevel are also to affect one of key factor of laser performance.
Japanese documentation JP59109252 discloses a kind of method that Al electrodes are prepared in p-type GaAs.But in quasiconductor
On laser device, especially apply on high power semiconductor lasers part, its metal unstability will necessarily affect ohm to connect
Tactile performance, so as to affect the reliability of device.Additionally, making in a kind of p-type GaAs disclosed in Japanese documentation JP02311969
Prepare in the method for standby PtAu electrodes, a kind of p-type GaAs disclosed in JP57120242 TiZnTiAg electrodes method and
The method that Pt/AuMn/Au electrodes are prepared in a kind of p-type GaAs disclosed in JP02311969 is a smithcraft, for two
Minor metal electrode process is without dabbling.
Chinese patent literature CN102130259A discloses a kind of combination electrode of light emitting diode and preparation method thereof, should
Combination electrode, its structure are respectively from bottom to top：Ohmic contact metal layer, the first isolating metal layer, filler metal layer, second every
From metal level, surface metal-layer, wherein, the second isolating metal layer and surface metal-layer be covered in ohmic contact metal layer, first
These three electrode layers are wrapped in electrode interior by above isolating metal layer and filler metal layer and side completely.But the party
Method adopts multiple evaporation metal technique, is easy to metal interlevel hole occur, sticks exception in actual production preparation process
The problems such as, chip is easier to occur that Ohmic contact is bad, stability is poor and life-span low problem.
The content of the invention
For the deficiency that existing semiconductor laser chip electrode and its technology of preparing are present, the present invention provides a kind of ohm
Contact is good, the semiconductor laser chip Ohm contact electrode of good stability, while providing a kind of semiconductor laser core
The preparation method of piece Ohm contact electrode.
The semiconductor laser chip Ohm contact electrode of the present invention, employs the following technical solutions：
The Ohm contact electrode, including contact metal layer group, guard metal layer and insulating barrier, contact metal layer group, protection
Metal level and insulating barrier are set gradually from bottom to top, and weld metal layers group is coated with contact metal layer group and insulating barrier, described
Contact metal layer group includes at least one contact metal layer, and the weld metal layers group includes at least one weld metal layers.
In the contact metal layer group, the preferred metal system of each layer is TiAu, TiPtAu, TiPt, NiPt or CrPt.
The thickness of the contact metal layer is 50 angstroms -1000 angstroms.
In the weld metal layers group the preferred metal system of each layer be TiAu, TiPtAu, NiAu, NiPtAu, CrAu or
CrPtAu。
The thickness that a weld metal layers are most gone up in the weld metal layers group is 3000 angstroms -20000 angstroms, remaining each weldering
The thickness for connecing metal level is 100 angstroms -1000 angstroms.
The guard metal layer and most next weld metal layers are similar metal, the thickness of guard metal layer is 10 angstroms-
500 angstroms.
The material preferred SiO2 or SiNx of the insulating barrier, the thickness of insulating barrier is 1000 angstroms -5000 angstroms.
The preparation method of above-mentioned semiconductor laser chip Ohm contact electrode, including step is as follows：
(1) by after semiconductor laser chip cleaning treatment, photolithography contact electrode pattern, photoresist mask protection are non-electrode
Graphics field；
(2) semiconductor laser chip is put in metal growth apparatus, when vacuum reaches 2 × 10-4Pa, evaporation connects
Tactile metal level group and guard metal layer, are from bottom to top at least deposited with a contact metal layer；
The metal growth apparatus are evaporator or sputtering unit.
(3) by non-electrode graphics field photoresist and metal-stripping, then acetone or alcohol heating in water bath processes quasiconductor
Chip of laser surface；
(4) by semiconductor laser chip cleaning treatment, then using plasma vapour deposition process (is put in PECVD to set
In standby) growth insulating barrier；
(5) by photoresist mask protection wet etching insulating barrier, while wet etching falls guard metal layer, then remove
Photoresist；The contact electrode pattern size that the contact electrode size of exposed section is prepared in should be less than step (1) after corrosion；
(6) acetone or alcohol heating in water bath processes semiconductor laser chip surface, and chip is put into metal growth then
In equipment, when vacuum reaches 2 × 10-4Pa, weld metal layers group is deposited with, is from bottom to top at least deposited with a weld metal layers.
The present invention through other one or more work steps, passes through corrosion top layer gold after metal evaporation again before metal evaporation
Category layer obtains good metal interface, to reach the effect that good contact is formed with the metal being deposited with again, can eliminate metal level
Between defect hole, increase intermetallic adhesive force, improve Ohmic contact, thermal fatigue resistance and the heat dispersion of device, with viscous
Attached property is good, metal interlevel stress is little, metal system thermal fatigue resistance, strong impact resistance ability the characteristics of, metal electrode can be effectively improved
Conductive and heat conductivility, so as to improve semiconductor laser chip ohm contact performance, heat-sinking capability, reliability and life-span.
Description of the drawings
Fig. 1 is to prepare the schematic diagram that contact metal layer group and guard metal layer are deposited with during Ohm contact electrode.
Fig. 2 is the schematic diagram for preparing depositing insulating layer 4 during Ohm contact electrode.
Fig. 3 be prepare Ohm contact electrode during expose the schematic diagram of guard metal layer.
Fig. 4 be prepare Ohm contact electrode during expose the schematic diagram of contact metal layer.
Fig. 5 is the structural representation of semiconductor laser chip Ohm contact electrode prepared by the present invention.
Fig. 6 is the schematic diagram of the P faces Ohm contact electrode that the present invention is prepared on GaAs semiconductor laser chips.
Fig. 7 is metal interlevel hole schematic diagram present in existing Ohm contact electrode preparation technology.
Fig. 8 is metal interlevel structural representation in Ohm contact electrode prepared by the present invention.
In figure, 1, semiconductor laser chip 1,2-0, the first contact metal layer, 2-1, the second contact metal layer, 3, protection
Metal level, 4, insulating barrier, 5-0, the first weld metal layers, 5-1, the second weld metal layers, 5-2, the 3rd weld metal layers, 6,
GaAs semiconductor laser chips, 6-a, GaAs semiconductor laser ridge area.
Specific embodiment
As shown in figure 5, the semiconductor laser chip Ohm contact electrode of the present invention, including contact metal layer, protection gold
Category layer 3 and insulating barrier 4, contact metal layer group, guard metal layer 3 and insulating barrier 4 are set gradually from bottom to top, contact metal layer group
In at least provided with a contact metal layer, have two in Fig. 1, i.e. the first contact metal layer 2-0 and the second contact metal layer 2-1.
The metal system of the first contact metal layer 2-0 and the second contact metal layer 2-1 is worked as TiAu, TiPt, NiPt or CrPt three
During contact metal layer, material system can select TiPtAu.The thickness of the first contact metal layer 2-0 and the second contact metal layer 2-1
50 angstroms -1000 angstroms are, weld metal layers group, weld metal layers group at least in contact metal layer group and insulating barrier 4, is coated with
Individual weld metal layers, have three in Fig. 1, i.e. the first weld metal layers 5-0, the second weld metal layers 5-1 and the 3rd welding metal
Layer 5-2, the metal system of three weld metal layers is TiPtAu, NiPtAu or CrPtAu.When there is two weld metal layers, its
Metal system is TiAu, NiAu or CrAu.Most go up in weld metal layers group a weld metal layers thickness be 3000 angstroms-
20000 angstroms, the thickness of remaining each weld metal layers is 100 angstroms -1000 angstroms.Guard metal layer 3 and most next welding metal
Layer (the first weld metal layers 5-0) is similar metal, and the thickness of guard metal layer 3 is 10 angstroms -500 angstroms.The material choosing of insulating barrier 4
Use SiO2Or SiNx, the thickness of insulating barrier 4 is 1000 angstroms -5000 angstroms.
The preparation process of above-mentioned semiconductor laser chip Ohm contact electrode, is first in 1 table of semiconductor laser chip
Face is from bottom to top sequentially prepared the first contact metal layer 2-0, the second contact metal layer 2-1 and guard metal layer 3, as shown in Figure 1；
Then as shown in Fig. 2 preparing insulating barrier 4；Etching insulating layer 4, expose guard metal layer 3, as shown in Figure 3 again；Then corrosion is protected
Shield metal level 3, exposes the second contact metal layer 2-1, as shown in Figure 4；Finally as shown in figure 5, from bottom to top preparing the first welding
Metal level 5-0, the second weld metal layers 5-1 and the 3rd weld metal layers 5-2.
Illustrate P faces Ohm contact electrode is prepared on pure stripe shape GaAs semiconductor laser chips 1 with actual conditions below
Technical process.
Wherein：The metal system of the first contact metal layer 2-0 and the second contact metal layer 2-1 is TiPt, and thickness is respectively
200 angstroms and 100 angstroms；The material of guard metal layer 3 is Ti, and thickness is 100 angstroms；The material of insulating barrier 4 is SiO2, thickness is 2000
Angstrom；The metal system of the first weld metal layers 5-0, the second weld metal layers 5-1 and the 3rd weld metal layers 5-2 is TiPtAu,
Thickness is respectively 200 angstroms, 500 angstroms and 8000 angstroms.
Production order：Epitaxial growth-photolithography contact electrode pattern-P faces evaporation contact electrode-vallum shaping-PECVD-
Photoetching corrosion-P faces are deposited with weld metal layers group, as shown in fig. 6, comprising the following steps that：
(1) on GaAs semiconductor laser chips 1, photoetching, photoresist protection are carried out using first laser device vallum domain
Non- vallum mesa region, spills vallum table section, with contact electrode to be deposited.
(2) GaAs semiconductor laser chips 1 are put into into evaporator within the chamber, when vacuum to 2 × 10-4Pa, evaporation connect
Tactile metal level group (TiPt) and guard metal layer 3 (Ti).Being deposited with sequencing is：Ti metal levels (the first contact metal layer 2-0),
200 angstroms of thickness requirement；Pt metal levels (the second contact metal layer 2-1), 100 angstroms of thickness requirement；Ti metal level (guard metal layer
3), 100 angstroms of thickness requirement.
By preparing guard metal layer 3, corrosion protection metal level before secondary evaporation metal prepares good interface, can be with
The good contact without hole defect is formed with weld metal layers.
(3) chip 1 for being deposited with metal is taken out, using the ultrasonic method of acetone metal-stripping by photoresist and thereon
Fall.
(4) Ti metal levels (the first contact metal layer 2-0), Pt metal levels (the second contact metal layer 2-1) and Ti metal levels
(guard metal layer 3) forms GaAs semiconductor laser ridge area 6-a as mask protection, corrosion vallum shaping.
(5) it is 1 cleaning treatment of chip is clean, SiO is deposited in being put in PECVD device2Thin film (insulating barrier 4), thickness 2000
Angstrom.
(6) photoetching is carried out using second laser vallum domain, photoresist is protected non-vallum mesa region, spills vallum platform
Face area.SiO is corroded using prior art2(insulating barrier 4), exposes Ti metal levels (guard metal layer 3), and corrodes Ti metal levels
(guard metal layer 3), exposes Pt metal (the second contact metal layer 2-1) in contact metal layer group.The second laser vallum
In domain, vallum width is less than the vallum width in first laser device vallum domain.Photoresist is removed using acetone.
(7) cleaned GaAs semiconductor laser chips 1, are placed again into evaporator within the chamber, when vacuum to 2 ×
10-4Below Pa, evaporation plating weld metal layers group TiPtAu (the first weld metal layers 5-0, the second weld metal layers 5-1 and the 3rd
Weld metal layers 5-2).Being deposited with sequencing is：Ti metal levels (the first weld metal layers 5-0), 200 angstroms of thickness requirement；Pt is golden
Category layer (the second weld metal layers 5-1), 500 angstroms of thickness requirement；Au metal levels (the 3rd weld metal layers 5-2), thickness requirement
8000 angstroms.The P faces Ohm contact electrode chip being deposited with is obtained, as shown in Figure 6.
Finally, the P faces Ohm contact electrode chip being deposited with is carried out into alloy, completes the preparation of P faces Ohm contact electrode.
The sheet that the metal interlevel structure and Fig. 8 of the Ohm contact electrode prepared by the existing process that Fig. 7 is given is given
The metal interlevel structure of Ohm contact electrode prepared by invention, it can be seen that the metal level of Ohm contact electrode prepared by the present invention
Between completely eliminate existing process preparation Ohm contact electrode present in metal interlevel hole problem.The present invention is by preparing
Guard metal layer 3, corrosion protection metal level before secondary evaporation metal, prepares good interface, can be formed with weld metal layers
The good contact without hole defect.
Claims (8)
1. a kind of semiconductor laser chip Ohm contact electrode, is characterized in that, including contact metal layer group, guard metal layer and
Insulating barrier, contact metal layer group, guard metal layer and insulating barrier are set gradually from bottom to top, in contact metal layer group and insulating barrier
Weld metal layers group is coated with, the contact metal layer group includes at least one contact metal layer, the weld metal layers group bag
Include at least one weld metal layers.
2. semiconductor laser chip Ohm contact electrode according to claim 1, is characterized in that, the contact metal layer
In group, the metal system of each layer is TiAu, TiPtAu, TiPt, NiPt or CrPt.
3. semiconductor laser chip Ohm contact electrode according to claim 1, is characterized in that, the contact metal layer
Thickness be 50 angstroms -1000 angstroms.
4. semiconductor laser chip Ohm contact electrode according to claim 1, is characterized in that, the weld metal layers
In group, the metal system of each layer is TiAu, TiPtAu, NiAu, NiPtAu, CrAu or CrPtAu.
5. semiconductor laser chip Ohm contact electrode according to claim 1, is characterized in that, the weld metal layers
The thickness that a weld metal layers are most gone up in group is 3000 angstroms -20000 angstroms, the thickness of remaining each weld metal layers is 100 angstroms -
1000 angstroms.
6. semiconductor laser chip Ohm contact electrode according to claim 1, is characterized in that, the guard metal layer
Most next weld metal layers are similar metal, and the thickness of guard metal layer is 10 angstroms -500 angstroms.
7. semiconductor laser chip Ohm contact electrode according to claim 1, is characterized in that, the material of the insulating barrier
Expect for SiO2Or SiNx, the thickness of insulating barrier is 1000 angstroms -5000 angstroms.
8. a kind of preparation method of semiconductor laser chip Ohm contact electrode described in claim 1, is characterized in that, including step
It is rapid as follows：
（1）After semiconductor laser chip cleaning treatment, photolithography contact electrode pattern, the non-electrode figure of photoresist mask protection
Region；
（2）Semiconductor laser chip is put in metal growth apparatus, when vacuum reaches 2 × 10-4Pa, is deposited with contacting metal
Layer group and guard metal layer, are from bottom to top at least deposited with a contact metal layer；
（3）By non-electrode graphics field photoresist and metal-stripping, then acetone or alcohol heating in water bath processes semiconductor laser
Device chip surface；
（4）By semiconductor laser chip cleaning treatment, then using plasma vapour deposition process growth insulating barrier；
（5）By photoresist mask protection wet etching insulating barrier, while wet etching falls guard metal layer, photoetching is then removed
Glue；After corrosion, the contact electrode size of exposed section should be less than step（1）The contact electrode pattern size of middle preparation；
（6）Acetone or alcohol heating in water bath processes semiconductor laser chip surface, and chip is put into metal growth apparatus then
In, when vacuum reaches 2 × 10-4Pa, is deposited with weld metal layers group, is from bottom to top at least deposited with a weld metal layers.
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| CN106505408B (en) * | 2016-11-01 | 2019-02-15 | 北京科技大学 | The optimization method of ridge bar shape semiconductor laser device active area cavity wall passivation |
| CN110518066B (en) * | 2019-08-13 | 2022-08-02 | 深圳市矽赫科技有限公司 | Semiconductor ohmic contact structure |
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| TW200939588A (en) * | 2008-01-23 | 2009-09-16 | Mitsubishi Electric Corp | Semiconductor light emitting device and manufacturing method therefor |
| TW201128888A (en) * | 2010-02-09 | 2011-08-16 | Mitsubishi Electric Corp | Semiconductor light-emitting element and method for manufacturing the same |
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| JP3299145B2 (en) * | 1997-07-15 | 2002-07-08 | 日本電気株式会社 | Gallium nitride based semiconductor p-type electrode and method of forming the same |
| JP2004200209A (en) * | 2002-12-16 | 2004-07-15 | Fuji Xerox Co Ltd | Method of forming conductive pattern of electrode, etc., surface light emitting type semiconductor laser using the same, and its manufacturing method |
| KR100773538B1 (en) * | 2004-10-07 | 2007-11-07 | 삼성전자주식회사 | Reflective electrode and compound semiconductor light emitting device including the same |
| JP4892941B2 (en) * | 2005-11-29 | 2012-03-07 | 富士ゼロックス株式会社 | Surface emitting semiconductor laser device and manufacturing method thereof |
| JP4768452B2 (en) * | 2006-01-19 | 2011-09-07 | シャープ株式会社 | Optical semiconductor device and method for manufacturing the same, optical disc device, and optical transmission system |
| CN202084572U (en) * | 2011-01-31 | 2011-12-21 | 杭州士兰明芯科技有限公司 | Ohmic contact electrode of nitride light emitting diode |
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| TW200939588A (en) * | 2008-01-23 | 2009-09-16 | Mitsubishi Electric Corp | Semiconductor light emitting device and manufacturing method therefor |
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