EP1625631A1 - Semi-conducteur organique pulverise et procede de depot chimique en phase vapeur sur un support - Google Patents

Semi-conducteur organique pulverise et procede de depot chimique en phase vapeur sur un support

Info

Publication number
EP1625631A1
EP1625631A1 EP04727889A EP04727889A EP1625631A1 EP 1625631 A1 EP1625631 A1 EP 1625631A1 EP 04727889 A EP04727889 A EP 04727889A EP 04727889 A EP04727889 A EP 04727889A EP 1625631 A1 EP1625631 A1 EP 1625631A1
Authority
EP
European Patent Office
Prior art keywords
compound
gas stream
carrier
carrier gas
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04727889A
Other languages
German (de)
English (en)
Inventor
Bernd Sachweh
Joachim Rösch
Markus Bold
Thomas Gessner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF SE
Original Assignee
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE filed Critical BASF SE
Publication of EP1625631A1 publication Critical patent/EP1625631A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Definitions

  • the invention relates to processes for the vapor deposition of one or more compounds, preferably solid at 25 ° C. and 1 bar, onto a support by:
  • step (iv) the compound precipitated in step (iii) is converted again into the gaseous state, preferably sublimed and then
  • the gaseous compound precipitates on the carrier, which preferably has a temperature below the sublimation temperature of the compound, preferably evaporates, preferably in the form of a preferably homogeneous layer.
  • the invention further relates to carriers obtainable in this way and in particular to organic light-emitting diodes or photovoltaic cells containing the carriers according to the invention.
  • the invention also relates to powdered organic semiconductor compound.
  • Organic light-emitting diodes or organic solar cells which are based on a semiconducting layer structure, are generally known.
  • evaporable crystalline or amorphous solids are deposited on a substrate via the gas phase.
  • the initial state of these solids is usually the solid in powdered form.
  • These powders are generally first evaporated from a source kept above the evaporation or sublimation temperature and mixed with a gas stream also kept above the sublimation temperature. Powders are usually produced by grinding processes.
  • the disadvantages mentioned above should be avoided in the process to be developed. In particular, decomposition of sensitive materials and fluctuating evaporation rates should be significantly reduced.
  • pulverized compounds, in particular pulverized organic semiconductors should be made available, which are particularly suitable for vapor deposition on supports and thus for the production of organic light-emitting diodes or photovoltaic cells.
  • the carrier gas stream containing the gaseous compound (s) is cooled to a temperature lower than the sublimation temperature of the compound (s) by supplying a gas stream, ie a further gas stream, ie a quenching gas stream, and preferably thus sublimed and thus converted into the solid state.
  • a gas stream ie a further gas stream, ie a quenching gas stream, and preferably thus sublimed and thus converted into the solid state.
  • the separation of the gaseous compounds due to the supply of the quench gas can provide a very finely divided powder with a very narrow particle size distribution that has an increased evaporation rate at the same temperature and evaporates in a narrow temperature window can be.
  • Another advantage is the lower tendency to decompose. In the case of components that are difficult to sublimate, the temperature of the evaporation process can be reduced, so that any further material components present are not subjected to unnecessary thermal stress. In addition, by reducing the particle size, the evaporation rate can be increased significantly, so that an evaporation process can be accelerated. This advantage applies in particular to molecular jet processes in which the powder to be evaporated is flowed through by a preheated gas stream at low pressure.
  • the narrow particle size distribution results in a uniform loading of the carrier gas stream with the component to be vapor-deposited, so that ideally uniform layer thicknesses can be produced on the carrier.
  • the evaporation temperature measured by thermogravimetry drops by an average of 30 K.
  • the proportion of decomposed material demonstrable as residue in the evaporation source, drops from an average of 30% to 4%. Due to the narrow particle size distribution, the evaporation rate remains constant over the entire evaporation period. This can be demonstrated by the unimodal peak in the derivative of the TGA curve over time. Another possibility of detection is an isothermal TGA just below the sublimation temperature.
  • According to the invention is thus a method for the vapor deposition of one or more compounds on a carrier by converting a compound into the gaseous state and then depositing it on a carrier, the compound being in the form of a powder with an average particle size of less than 10 ⁇ m by sublimation in the gaseous state is transferred.
  • the gas stream supplied to the carrier gas stream i.e. the quench gas stream has a temperature which is at least 10 ° C., preferably 100 to 700 ° C. lower than the temperature of the carrier gas stream.
  • the volume ratio of carrier gas stream to gas stream which is fed in is preferably between 10: 1 and 1: 100.
  • the volume flows can usually be selected in a known manner by the person skilled in the art depending on the size of the system.
  • the quench gas stream can preferably be supplied via the porous wall of a tube.
  • the carrier gas stream can flow around this porous tube so that the cold quench gas is added from the inside of the tube through the pores into the flow of the carrier gas stream.
  • the tube that conducts the carrier gas stream itself can have a porous wall, so that the cold quench gas is added from the outside of the tube into the warm carrier gas stream. Both methods of addition can also be combined.
  • the quench gas is preferably added by axial addition to the carrier gas stream. Examples of materials that are suitable for the production of such tubes are porous sintered metal and sintered ceramic tubes.
  • connection is to be understood as the connection (s) that are to be deposited on the carrier.
  • the compound or compounds are preferably non-metallic materials with melting points of more than 50 ° C.
  • the compounds are particularly preferably organic semiconductor materials, where “organic” has meaning in the sense of the usual chemical definition.
  • Step (i), ie the transfer of the connection into the carrier gas stream can be carried out according to the invention by generally known methods for introducing solid substances into a carrier gas stream, preferably by means of a brush metering.
  • Brush dosing of this type is generally known.
  • Corresponding devices for brush dosing are commercially available, for example, from Palas®, Düsseldorf, Germany, under the name particle dosing device RBG 1000.
  • the principle of brush dosing is based on a stainless steel block (dispersion head) in which a brush is rotatably mounted.
  • the connection to be transferred into the carrier gas stream is pushed against the rotating brush from a preferably cylindrical storage container, with individual particles of the connection being carried along by the brush.
  • connection located on and / or in the rotating brush is blown out of and / or from the brush by means of a carrier gas stream and transported away in the carrier gas stream through the dust outlet nozzle.
  • Further information on the particle dispenser RBG 1000 can be found in the operating instructions RBG-1000, Palas® GmbH, 1994.
  • the compounds are generally in a solid state and as a powder Solids, preferably with a particle size with an average diameter of 1 nm to 100000 nm, particularly preferably 5 nm to 10000 nm, preferably transferred from the brush into the carrier gas stream.
  • the compound is preferably introduced into the carrier gas stream in the solid state below the sublimation temperature.
  • the carrier gas stream is preferably a laminar gas stream, preferably with a carrier gas velocity between 0.01 m / s and 1 m / s.
  • the compound is preferably brought into the center of a laminar gas stream of the carrier gas in a swirl-free manner. This reduces contact with the hot inner tube walls of the furnace, in which the compounds in step (ii) are sublimed and / or evaporated.
  • a jacket gas stream heated to furnace temperature can be introduced coaxially around the carrier gas stream in order to reduce particle movement to the inner wall of the pipe.
  • gases preferably those which are inert to the compound to be absorbed, can be used as carrier gas, for example air, carbon dioxide, noble gases, nitrogen.
  • Steps (i), (ii) and (iii) are preferably carried out at a pressure, preferably of the carrier gas, between 0.001 mbar and 110,000 mbar, particularly preferably between 0.1 mbar and 1100 mbar.
  • the respective sublimation temperature results directly from the selected pressure.
  • the carrier gas, into which the compound is preferably introduced in the solid state preferably has a temperature between 10 ° C. and 300 ° C., particularly preferably 10 ° C. to 100 ° C. It is therefore preferred in (i) to introduce the compound in the solid state below the sublimation temperature, preferably by means of a brush metering into the carrier gas stream.
  • Step (ii), ie the guidance of the compound in gaseous state in the carrier gas when the compound in gaseous state is introduced into the carrier gas and / or preferably the evaporation or sublimation of the solid compound in the carrier gas stream can be carried out by means of generally known heating devices, for example by heating the carrier gas stream and the compound located in this gas stream to a temperature above the sublimation temperature by means of microwaves, infrared and / or near-infrared radiation sources.
  • the carrier gas stream and the connection can preferably be heated in a hot-wall oven.
  • the expression "hot-wall oven” is preferably to be understood as meaning an externally heated and insulated flow tube, preferably with a circular cross section.
  • the pulverized compound is preferably converted into the gas phase. Evaporation of the pulverized compound in the carrier gas stream can take place very quickly, which can minimize the time between heating and deposition.
  • the connection in the carrier gas stream is preferred at a temperature between 100 ° C and 1000 ° C, particularly preferably between 101 ° C and 600 ° C in the gaseous state.
  • the solid compound is converted into the gaseous state at a pressure of 0.1 to 2200 mbar.
  • the precipitation of the gaseous compound according to the invention by supplying quench gas takes place by cooling and thus desublimation.
  • the gaseous compounds in the carrier gas stream are thus cooled to a temperature below the sublimation temperature in such a way that the carrier gas stream containing the gaseous compound is obtained by supplying a second gas stream, i.e. a so-called quench gas stream, cools down.
  • the temperature setting can be selected by the volume ratio of carrier gas flow to quench gas flow.
  • the quench gas can be, for example, the gases which can also be used as carrier gas.
  • the precipitation or separation of the gaseous compound in step (iii) is preferably carried out at a pressure of 0.1 mbar to 2200 mbar.
  • the gaseous compound is preferably precipitated from the carrier gas stream at a temperature of the carrier gas, i.e. after supplying the quench gas, from 10 ° C to 300 ° C, particularly preferably 10 ° C to 150 ° C, in particular 10 to 100 ° C.
  • connection is preferably in the gaseous state for a period of at most 100 s, particularly preferably 0.01 s to 30 s, in particular 1 s to 10 s, i.e. between evaporation and / or sublimation in the heating phase (ii) and (iii) deposition, before, i.e. the duration in which the compound is kept at a temperature above the sublimation temperature is preferably very short, with the result that decomposition of the sensitive compounds is avoided.
  • the pulverized compounds obtainable in step (iii) are preferably deposited on the surfaces of generally known electrostatic precipitators or particle filters, the pulverized compounds being removed from the surface from time to time and stored in powder containers.
  • the storage can take place under the pressures described under (iii), preferably at ambient pressure.
  • the compound (s) precipitated in step (iii) are preferably in the form of powder, preferably having an average particle size of less than 10 ⁇ m, particularly preferably between 1 nm and 1000 nm, in particular between 1 nm and 200 nm.
  • the mean particle size is defined as the arithmetic mean over all particle sizes of the particle size distribution.
  • the distribution width of the particle size is measured as the geometric standard deviation of the compound (s) precipitated in step (iii) in the form of powder, preferably less than 2, particularly preferably less than 1.5.
  • the compound (s) precipitated in step (iii) in the form of powder preferably have a specific surface area, measured by the BET method, greater than 0.1 m / g, particularly preferably greater than 5 m 2 / g, in particular greater than 10 m 2 / g on.
  • the gaseous compound (s) can be cooled in step (iii) by supplying a colder gas stream to the carrier gas stream containing the gaseous compound (s) to a temperature lower than the sublimation temperature of the compound (s) and thereby precipitating.
  • the solid compounds deposited in step (iii) can preferably be charged electrically, for example by applying electrical charges to the particles via a corona discharge. Accordingly, the compound (s) deposited in step (iii) preferably have a surface charge between one (1) and ten (10) elementary charges, which can be detected, for example, with a Faraday Cup arrangement.
  • step (iii) The compounds precipitated in step (iii) are preferably converted into the gaseous state again in step (iv), for example as shown for (i) and (ii), i.e. in solid and / or gaseous form, for example, introduced into a carrier gas stream and converted into the gaseous state in the carrier gas stream, and then deposited in step (v) on a carrier.
  • step (iv) i.e. in solid and / or gaseous form
  • Evaporation of the compound converted into the gaseous state in step (iv) in step (v) is preferably carried out in such a way that in step (v) the gaseous compound is evaporated onto the carrier at a temperature of the carrier which is lower than the sublimation temperature of the compound.
  • the sublimation temperature of the respective compound can be found in the specialist literature at a specific pressure or can be determined without difficulty by varying the temperature of the support.
  • the gaseous compound is preferably evaporated onto the support in step (v) at a temperature of the support of 10 ° C. to 100 ° C. Due to the low temperature of the carrier, the gaseous compound is desublimated and a preferably homogeneous layer of the compound is formed on the carrier.
  • step (v) While in step (iii) cooling with the quench gas produces a powder which is as finely divided as possible and which is outstandingly suitable for rapid, gentle evaporation or sublimation, in step (v) a layer which is as homogeneous as possible is produced on the desired carrier.
  • Flat substrates made of plastic, glass, ceramics, semiconductors and metal are suitable as supports on which the compounds in steps (v) and optionally (iii) are deposited.
  • the carrier or carriers is preferably glass, indium tin oxide coated glass (ITO glass) and glass coated with semiconductor materials such as silicon, for example so-called active matrix substrates with thin-film transistors made of silicon semiconductors on glass.
  • the supports obtainable according to the invention with the vapor-deposited compound or the vapor-deposited compounds which preferably have a layer with a total thickness between 1 nm to 500 nm, particularly preferably 10 to 400 nm, are particularly suitable for the production of electronic devices, for example organic light-emitting diodes, thin-film solar cells or others Devices with electroluminescent layer structure such as Suitable photovoltaic cells, preferably organic light-emitting diodes and photovoltaic cells, particularly preferably light-emitting diodes.
  • the pulverized organic semiconductor compound according to the invention has between 1 and 10 elementary charges, which can be detected, for example, with a Faraday cup arrangement.
  • the powdered organic semiconductor compounds according to the invention can be in the form of pellets or tablets.
  • Powdery copper phthalocyanine was transferred to a nitrogen stream (approx. 1 m 3 / h) using a brush dosing device (Palas, RBG 1000) under ambient conditions. This was then passed into a hot wall oven, an externally heated, insulated flow tube with a circular cross section. In this, the solid copper phthalocyanine was completely converted into the gas phase average temperatures from 500 to 600 ° C. Appropriate flow control prevented the contact of the solid copper phthalocyanine with the hot inner tube walls of the furnace and thus thermal decomposition of the particles.
  • Desublimation was then carried out in a quench apparatus by axially adding cold nitrogen in an amount of 0.5 to 2.0 m 3 / h into the hot gas stream laden with copper phthalocyanine vapor.
  • the gas flow cooled down to temperatures below 250 ° C.
  • the amount of cold gas By varying the amount of cold gas, both the size of the particles and the distribution width can be controlled.
  • the fine particles were separated in an electrostatic filter.
  • thermogravimetric experiment a sample of copper phthalocyanine crude pigment (ground, particle size> 1 ⁇ m) and a sample of the copper phthalocyanine nanopowder prepared in Example 1 were heated at a heating rate of 5 K / min and the weight loss of the crucible was recorded over time. The intersection of the turning point tangent of the weight-time curve with the baseline was determined as the evaporation temperature (onset). It is 422.7 ° C for the raw pigment. It is 400.7 ° C. for the nanopowder according to the invention.
  • the evaporation rate was determined as the maximum of the first derivative of weight loss over time.
  • the evaporation rate for the raw pigment is - 9.3% / min, for the nanopowder according to the invention the evaporation rate is - 21.9% / min.
  • the TGA curve of the raw pigment also has a shoulder at higher temperatures, which is due to the broad particle size distribution of the ground raw pigment. In contrast, the evaporation curve of the narrowly distributed nanopowder is monomodal.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un procédé de dépôt chimique en phase vapeur d'au moins un composé sur un support. Selon ce procédé, i) on introduit le composé à l'état solide ou gazeux dans un flux de gaz porteur, ii) le composé est présent dans le flux de gaz porteur sous la forme gazeuse, iii) le composé gazeux se condense, iv) le composé condensé obtenu en (iii) est à nouveau converti à l'état gazeux et v) le composé gazeux se dépose sur le support. On refroidit le flux de gaz porteur contenant le/les composé(s) gazeux en introduisant un flux gazeux à une température inférieure à la température de sublimation du/des composé(s).
EP04727889A 2003-04-30 2004-04-16 Semi-conducteur organique pulverise et procede de depot chimique en phase vapeur sur un support Withdrawn EP1625631A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10319742A DE10319742A1 (de) 2003-04-30 2003-04-30 Pulverisierte organische Halbleiter und Verfahren zum Aufdampfen auf einen Träger
PCT/EP2004/004039 WO2004097955A1 (fr) 2003-04-30 2004-04-16 Semi-conducteur organique pulverise et procede de depot chimique en phase vapeur sur un support

Publications (1)

Publication Number Publication Date
EP1625631A1 true EP1625631A1 (fr) 2006-02-15

Family

ID=33305129

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04727889A Withdrawn EP1625631A1 (fr) 2003-04-30 2004-04-16 Semi-conducteur organique pulverise et procede de depot chimique en phase vapeur sur un support

Country Status (7)

Country Link
US (1) US20070042178A1 (fr)
EP (1) EP1625631A1 (fr)
JP (1) JP2006525422A (fr)
KR (1) KR20060007413A (fr)
CN (1) CN1802759A (fr)
DE (1) DE10319742A1 (fr)
WO (1) WO2004097955A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102131951A (zh) 2008-07-28 2011-07-20 多摩-技术转让机关株式会社 物理气相沉积装置及物理气相沉积方法
JP2010106357A (ja) * 2008-09-30 2010-05-13 Canon Inc 成膜方法及び成膜装置
US20110278276A1 (en) * 2009-01-27 2011-11-17 Basf Se Process and apparatus for continuous purification of a solid mixture by fractional sublimation/desublimation
WO2010122921A1 (fr) * 2009-04-23 2010-10-28 Dic株式会社 Nanofils de phtalocyanine, composition d'encre et élément électronique contenant ceux-ci et procédé de fabrication de nanofils de phtalocyanine
US8812253B2 (en) * 2010-06-08 2014-08-19 Rosemount Inc. Fluid flow measurement with phase-based diagnostics
WO2013164761A1 (fr) * 2012-05-02 2013-11-07 Basf Se Procédé de dépôt d'une matière organique
DE102014109194A1 (de) * 2014-07-01 2016-01-07 Aixtron Se Vorrichtung und Verfahren zum Erzeugen eines Dampfes für eine CVD- oder PVD-Einrichtung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB940393A (en) * 1958-11-26 1963-10-30 Ti Group Services Ltd Production of whiskers
US4264343A (en) * 1979-05-18 1981-04-28 Monsanto Company Electrostatic particle collecting apparatus
DE3617232A1 (de) * 1986-05-22 1987-11-26 Palas Gmbh Vorrichtung zur erzeugung eines feststoffaerosols
JPS6348551A (ja) * 1986-08-18 1988-03-01 Fuji Photo Film Co Ltd 電子写真感光体
JPH0483871A (ja) * 1990-07-27 1992-03-17 Semiconductor Energy Lab Co Ltd 有機薄膜の作製方法及びその作製装置
US5969376A (en) * 1996-08-23 1999-10-19 Lucent Technologies Inc. Organic thin film transistor having a phthalocyanine semiconductor layer
US6420031B1 (en) * 1997-11-03 2002-07-16 The Trustees Of Princeton University Highly transparent non-metallic cathodes
DE10146653B4 (de) * 2001-03-30 2006-08-24 Fuji Xerox Co., Ltd. Toner zum optischen Fixieren und diesen verwendende Abbildungsvorrichtung
DE10256850A1 (de) * 2002-12-04 2004-06-24 Basf Ag Verfahren und Aufdampfung von Verbindung(en) auf einen Träger

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2004097955A1 *

Also Published As

Publication number Publication date
JP2006525422A (ja) 2006-11-09
DE10319742A1 (de) 2004-11-18
CN1802759A (zh) 2006-07-12
US20070042178A1 (en) 2007-02-22
WO2004097955A1 (fr) 2004-11-11
KR20060007413A (ko) 2006-01-24

Similar Documents

Publication Publication Date Title
EP0568863B1 (fr) Poudre métallique finement divisée
EP0568862B1 (fr) Poudre métallique finement divisée
DE4214719C2 (de) Verfahren zur Herstellung feinteiliger Metall- und Keramikpulver
DE69636627T2 (de) Chemischen gasphasenabscheidung und pulverbildung mittels einer thermischen spritzmethode aus beinahe superkitischen und superkritischen flussigkeitlösungen
EP1773947A1 (fr) Procede et dispositif pour produire des nanoparticules
Gurav et al. Generation of nanometer-size fullerene particles via vapor condensation
DE4214720C2 (de) Vorrichtung zur Herstellung feinteiliger Metall- und Keramikpulver
WO2010049382A1 (fr) Procédé de préparation d'une suspension de borures métalliques nanoparticulaires
EP2391431B1 (fr) Procédé et dispositif pour la purification en continu d'un mélange de solides par sublimation/anti-sublimation fractionnée
DE4214724C2 (de) Feinteiliges Oxid-Keramikpulver
EP1928597B1 (fr) Procede pour deposer des nanoparticules sur des particules de substrat
EP0650791B1 (fr) Particules fines de métals, d'alliages et de composés métalliques
EP1654397B1 (fr) Procede et dispositif de revetement ou de modification de surfaces
EP1625631A1 (fr) Semi-conducteur organique pulverise et procede de depot chimique en phase vapeur sur un support
DE4214725C2 (de) Feinteilige Nichtoxid-Keramikpulver
US9856143B2 (en) Pressure controlled droplet spraying (PCDS) method for forming particles of compound materials from melts
DE102017112668A1 (de) Verfahren zum Abscheiden von OLEDs
WO1998000363A1 (fr) PROCEDE ET DISPOSITIF DE PRODUCTION DE FULLERENES ENDOEDRES STABLES DE STRUCTURE Z@Cx OU x ≥ 60
WO2004050946A1 (fr) Procede de metallisation sous vide de compose(s) sur un support
EP3025701A1 (fr) Poudre de silicium nano-cristalline, son procédé de fabrication et son utilisation
WO2022135866A1 (fr) Production de moo2cl2
DE102018003289A1 (de) Verfahren zur Einstellung der Kristallitgröße bei pulverförmigen Beschichtungsmaterialien für die aerosolbasierte Kaltabscheidung (Aerosol-Depositions-Methode, ADM)

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20051130

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

DAX Request for extension of the european patent (deleted)
RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: BASF SE

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20091031