EP1589592A3 - Lichtemittierende Halbleiter-Vorrichtung mit entlang einer Kristall-Ebene ausgerichteten lichtemittierenden Schichten - Google Patents

Lichtemittierende Halbleiter-Vorrichtung mit entlang einer Kristall-Ebene ausgerichteten lichtemittierenden Schichten Download PDF

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Publication number
EP1589592A3
EP1589592A3 EP05103070A EP05103070A EP1589592A3 EP 1589592 A3 EP1589592 A3 EP 1589592A3 EP 05103070 A EP05103070 A EP 05103070A EP 05103070 A EP05103070 A EP 05103070A EP 1589592 A3 EP1589592 A3 EP 1589592A3
Authority
EP
European Patent Office
Prior art keywords
light emitting
plane
devices including
emitting layer
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05103070A
Other languages
English (en)
French (fr)
Other versions
EP1589592A2 (de
Inventor
James C. c/o Lumileds Lighting U.S. LLC Kim
Yu-Chen c/o Lumileds Lighting U.S. LLC Shen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds LLC
Original Assignee
Philips Lumileds Lighing Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Lumileds Lighing Co LLC filed Critical Philips Lumileds Lighing Co LLC
Publication of EP1589592A2 publication Critical patent/EP1589592A2/de
Publication of EP1589592A3 publication Critical patent/EP1589592A3/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)
EP05103070A 2004-04-21 2005-04-18 Lichtemittierende Halbleiter-Vorrichtung mit entlang einer Kristall-Ebene ausgerichteten lichtemittierenden Schichten Withdrawn EP1589592A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/829,141 US7285799B2 (en) 2004-04-21 2004-04-21 Semiconductor light emitting devices including in-plane light emitting layers
US829141 2004-04-21

Publications (2)

Publication Number Publication Date
EP1589592A2 EP1589592A2 (de) 2005-10-26
EP1589592A3 true EP1589592A3 (de) 2011-03-09

Family

ID=34939348

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05103070A Withdrawn EP1589592A3 (de) 2004-04-21 2005-04-18 Lichtemittierende Halbleiter-Vorrichtung mit entlang einer Kristall-Ebene ausgerichteten lichtemittierenden Schichten

Country Status (4)

Country Link
US (1) US7285799B2 (de)
EP (1) EP1589592A3 (de)
JP (1) JP2005311375A (de)
TW (1) TWI366922B (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070045638A1 (en) * 2005-08-24 2007-03-01 Lumileds Lighting U.S., Llc III-nitride light emitting device with double heterostructure light emitting region
US7701995B2 (en) * 2007-07-06 2010-04-20 Nichia Corporation Nitride semiconductor laser element
JP2009158955A (ja) * 2007-12-06 2009-07-16 Rohm Co Ltd 窒化物半導体レーザダイオード
JP2011511462A (ja) * 2008-02-01 2011-04-07 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ウエハの軸外カットによる窒化物発光ダイオードの偏光の向上
JP2011511463A (ja) * 2008-02-01 2011-04-07 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア インジウム混和の増加による、窒化物発光ダイオードの偏光の向上
JP5184927B2 (ja) * 2008-03-21 2013-04-17 パナソニック株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP2010027924A (ja) * 2008-07-22 2010-02-04 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物発光ダイオード
JP5210387B2 (ja) * 2008-08-29 2013-06-12 パナソニック株式会社 発光素子
CN102460739A (zh) * 2009-06-05 2012-05-16 加利福尼亚大学董事会 长波长非极性及半极性(Al,Ga,In)N基激光二极管
US8207554B2 (en) 2009-09-11 2012-06-26 Soraa, Inc. System and method for LED packaging
US8575642B1 (en) 2009-10-30 2013-11-05 Soraa, Inc. Optical devices having reflection mode wavelength material
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US20110215348A1 (en) * 2010-02-03 2011-09-08 Soraa, Inc. Reflection Mode Package for Optical Devices Using Gallium and Nitrogen Containing Materials
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
TWI557936B (zh) 2010-04-30 2016-11-11 美國波士頓大學信託會 具能帶結構位變動之高效率紫外光發光二極體
US8896235B1 (en) 2010-11-17 2014-11-25 Soraa, Inc. High temperature LED system using an AC power source
US8541951B1 (en) 2010-11-17 2013-09-24 Soraa, Inc. High temperature LED system using an AC power source
USD720310S1 (en) 2011-06-17 2014-12-30 Soraa, Inc. Triangular semiconductor die
WO2013046564A1 (ja) 2011-09-29 2013-04-04 パナソニック株式会社 窒化物半導体発光素子およびｌｅｄシステム
US8723189B1 (en) * 2012-01-06 2014-05-13 Trustees Of Boston University Ultraviolet light emitting diode structures and methods of manufacturing the same
CN104600162B (zh) * 2014-03-24 2016-01-27 上海卓霖半导体科技有限公司 基于lao衬底的非极性蓝光led外延片的制备方法
JP7244745B2 (ja) 2019-02-15 2023-03-23 日亜化学工業株式会社 発光装置、及び、光学装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072197A (en) * 1996-02-23 2000-06-06 Fujitsu Limited Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
WO2001041224A2 (en) * 1999-12-02 2001-06-07 Cree Lighting Company High efficiency light emitters with reduced polarization-induced charges

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3816176B2 (ja) * 1996-02-23 2006-08-30 富士通株式会社 半導体発光素子及び光半導体装置
WO1998019375A1 (en) 1996-10-30 1998-05-07 Hitachi, Ltd. Optical information processor and semiconductor light emitting device suitable for the same
US6504588B1 (en) * 1998-04-28 2003-01-07 Citizen Watch Co., Ltd. Reflection-type color liquid crystal display device having absorbing member containing fluorescent material
JP3505405B2 (ja) * 1998-10-22 2004-03-08 三洋電機株式会社 半導体素子及びその製造方法
US6635904B2 (en) * 2001-03-29 2003-10-21 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
US6955933B2 (en) * 2001-07-24 2005-10-18 Lumileds Lighting U.S., Llc Light emitting diodes with graded composition active regions
JP2003234545A (ja) * 2002-02-07 2003-08-22 Sanyo Electric Co Ltd 半導体発光素子
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
US7408201B2 (en) * 2004-03-19 2008-08-05 Philips Lumileds Lighting Company, Llc Polarized semiconductor light emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072197A (en) * 1996-02-23 2000-06-06 Fujitsu Limited Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
WO2001041224A2 (en) * 1999-12-02 2001-06-07 Cree Lighting Company High efficiency light emitters with reduced polarization-induced charges

Also Published As

Publication number Publication date
EP1589592A2 (de) 2005-10-26
JP2005311375A (ja) 2005-11-04
TW200605399A (en) 2006-02-01
US20050236627A1 (en) 2005-10-27
US7285799B2 (en) 2007-10-23
TWI366922B (en) 2012-06-21

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