EP1589592A3 - Lichtemittierende Halbleiter-Vorrichtung mit entlang einer Kristall-Ebene ausgerichteten lichtemittierenden Schichten - Google Patents
Lichtemittierende Halbleiter-Vorrichtung mit entlang einer Kristall-Ebene ausgerichteten lichtemittierenden Schichten Download PDFInfo
- Publication number
- EP1589592A3 EP1589592A3 EP05103070A EP05103070A EP1589592A3 EP 1589592 A3 EP1589592 A3 EP 1589592A3 EP 05103070 A EP05103070 A EP 05103070A EP 05103070 A EP05103070 A EP 05103070A EP 1589592 A3 EP1589592 A3 EP 1589592A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- light emitting
- plane
- devices including
- emitting layer
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052984 zinc sulfide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/829,141 US7285799B2 (en) | 2004-04-21 | 2004-04-21 | Semiconductor light emitting devices including in-plane light emitting layers |
US829141 | 2004-04-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1589592A2 EP1589592A2 (de) | 2005-10-26 |
EP1589592A3 true EP1589592A3 (de) | 2011-03-09 |
Family
ID=34939348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP05103070A Withdrawn EP1589592A3 (de) | 2004-04-21 | 2005-04-18 | Lichtemittierende Halbleiter-Vorrichtung mit entlang einer Kristall-Ebene ausgerichteten lichtemittierenden Schichten |
Country Status (4)
Country | Link |
---|---|
US (1) | US7285799B2 (de) |
EP (1) | EP1589592A3 (de) |
JP (1) | JP2005311375A (de) |
TW (1) | TWI366922B (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070045638A1 (en) | 2005-08-24 | 2007-03-01 | Lumileds Lighting U.S., Llc | III-nitride light emitting device with double heterostructure light emitting region |
US7701995B2 (en) * | 2007-07-06 | 2010-04-20 | Nichia Corporation | Nitride semiconductor laser element |
JP2009158955A (ja) * | 2007-12-06 | 2009-07-16 | Rohm Co Ltd | 窒化物半導体レーザダイオード |
KR20100107054A (ko) * | 2008-02-01 | 2010-10-04 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 웨이퍼 비축 절단에 의한 질화물 발광 다이오드들의 광학 편광의 강화 |
KR20100129280A (ko) * | 2008-02-01 | 2010-12-08 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 증가된 인듐 도입에 의한 질화물 발광 다이오드들의 광학 편광의 강화 |
JP5184927B2 (ja) * | 2008-03-21 | 2013-04-17 | パナソニック株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
JP2010027924A (ja) * | 2008-07-22 | 2010-02-04 | Sumitomo Electric Ind Ltd | Iii族窒化物発光ダイオード |
WO2010023777A1 (ja) * | 2008-08-29 | 2010-03-04 | パナソニック株式会社 | 発光素子 |
WO2010141943A1 (en) * | 2009-06-05 | 2010-12-09 | The Regents Of The University Of California | LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES |
US8207554B2 (en) | 2009-09-11 | 2012-06-26 | Soraa, Inc. | System and method for LED packaging |
US8575642B1 (en) | 2009-10-30 | 2013-11-05 | Soraa, Inc. | Optical devices having reflection mode wavelength material |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US20110215348A1 (en) * | 2010-02-03 | 2011-09-08 | Soraa, Inc. | Reflection Mode Package for Optical Devices Using Gallium and Nitrogen Containing Materials |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
CN105161402B (zh) | 2010-04-30 | 2020-08-18 | 波士顿大学理事会 | 具有能带结构电位波动的高效紫外发光二极管 |
US8541951B1 (en) | 2010-11-17 | 2013-09-24 | Soraa, Inc. | High temperature LED system using an AC power source |
US8896235B1 (en) | 2010-11-17 | 2014-11-25 | Soraa, Inc. | High temperature LED system using an AC power source |
WO2013046564A1 (ja) | 2011-09-29 | 2013-04-04 | パナソニック株式会社 | 窒化物半導体発光素子およびledシステム |
US8723189B1 (en) | 2012-01-06 | 2014-05-13 | Trustees Of Boston University | Ultraviolet light emitting diode structures and methods of manufacturing the same |
CN104600162B (zh) * | 2014-03-24 | 2016-01-27 | 上海卓霖半导体科技有限公司 | 基于lao衬底的非极性蓝光led外延片的制备方法 |
JP7244745B2 (ja) * | 2019-02-15 | 2023-03-23 | 日亜化学工業株式会社 | 発光装置、及び、光学装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6072197A (en) * | 1996-02-23 | 2000-06-06 | Fujitsu Limited | Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy |
WO2001041224A2 (en) * | 1999-12-02 | 2001-06-07 | Cree Lighting Company | High efficiency light emitters with reduced polarization-induced charges |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3816176B2 (ja) * | 1996-02-23 | 2006-08-30 | 富士通株式会社 | 半導体発光素子及び光半導体装置 |
US6542526B1 (en) * | 1996-10-30 | 2003-04-01 | Hitachi, Ltd. | Optical information processor and semiconductor light emitting device suitable for the same |
KR100317683B1 (ko) * | 1998-04-28 | 2001-12-22 | 하루타 히로시 | 반사형 칼라액정표시장치 |
JP3505405B2 (ja) * | 1998-10-22 | 2004-03-08 | 三洋電機株式会社 | 半導体素子及びその製造方法 |
US6635904B2 (en) * | 2001-03-29 | 2003-10-21 | Lumileds Lighting U.S., Llc | Indium gallium nitride smoothing structures for III-nitride devices |
US6955933B2 (en) * | 2001-07-24 | 2005-10-18 | Lumileds Lighting U.S., Llc | Light emitting diodes with graded composition active regions |
JP2003234545A (ja) * | 2002-02-07 | 2003-08-22 | Sanyo Electric Co Ltd | 半導体発光素子 |
US7408201B2 (en) * | 2004-03-19 | 2008-08-05 | Philips Lumileds Lighting Company, Llc | Polarized semiconductor light emitting device |
US7808011B2 (en) * | 2004-03-19 | 2010-10-05 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting devices including in-plane light emitting layers |
-
2004
- 2004-04-21 US US10/829,141 patent/US7285799B2/en not_active Expired - Lifetime
-
2005
- 2005-04-18 EP EP05103070A patent/EP1589592A3/de not_active Withdrawn
- 2005-04-19 TW TW094112451A patent/TWI366922B/zh active
- 2005-04-21 JP JP2005123290A patent/JP2005311375A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6072197A (en) * | 1996-02-23 | 2000-06-06 | Fujitsu Limited | Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy |
WO2001041224A2 (en) * | 1999-12-02 | 2001-06-07 | Cree Lighting Company | High efficiency light emitters with reduced polarization-induced charges |
Also Published As
Publication number | Publication date |
---|---|
US20050236627A1 (en) | 2005-10-27 |
US7285799B2 (en) | 2007-10-23 |
EP1589592A2 (de) | 2005-10-26 |
JP2005311375A (ja) | 2005-11-04 |
TWI366922B (en) | 2012-06-21 |
TW200605399A (en) | 2006-02-01 |
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Ipc: H01L 33/32 20100101ALN20110201BHEP Ipc: H01L 33/06 20100101ALN20110201BHEP Ipc: H01L 33/02 20100101ALN20110201BHEP Ipc: H01L 33/18 20100101AFI20110201BHEP |
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