EP1580837A1 - Halbleiterbauelement mit Antenne und Abschirmung - Google Patents

Halbleiterbauelement mit Antenne und Abschirmung Download PDF

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Publication number
EP1580837A1
EP1580837A1 EP05290458A EP05290458A EP1580837A1 EP 1580837 A1 EP1580837 A1 EP 1580837A1 EP 05290458 A EP05290458 A EP 05290458A EP 05290458 A EP05290458 A EP 05290458A EP 1580837 A1 EP1580837 A1 EP 1580837A1
Authority
EP
European Patent Office
Prior art keywords
antenna
screen
collector
collector screen
main branch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP05290458A
Other languages
English (en)
French (fr)
Other versions
EP1580837B1 (de
Inventor
Daniel Gloria
Sébastien Montusclat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Publication of EP1580837A1 publication Critical patent/EP1580837A1/de
Application granted granted Critical
Publication of EP1580837B1 publication Critical patent/EP1580837B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/48—Earthing means; Earth screens; Counterpoises
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • H01Q1/526—Electromagnetic shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
    • H01Q13/10—Resonant slot antennas
    • H01Q13/106—Microstrip slot antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/06—Details
    • H01Q9/065—Microstrip dipole antennas

Definitions

  • the present invention relates to the field of semiconductor devices.
  • the purpose of the present invention is to propose components for integrated circuits that also integrate transmitting / receiving antennas of radio signals and which are such that these antennas are of good quality even when radio signals are high frequencies.
  • the semiconductor device comprises a substrate in particular silicon and layers made on this substrate in at least one of which an antenna is made transmitter / receiver of radio signals.
  • the semiconductor device comprises in in addition, between said antenna and said substrate, a collector screen of currents induced between this antenna and this substrate, this collector screen being made in at least one layer and comprising at least one main branch connected to a fixed potential, in particular a mass, and secondary branches only connected to said main branch by one of their ends so that this collector screen has a tree structure.
  • said collector screen is preferably symmetrical with respect to an axis corresponding to the axis of the antenna.
  • the main branch of said screen manifold preferably extends at least in part according to the strip input / output of the antenna.
  • the main branch of said screen collector is shifted with respect to the zone or zones in which the antenna field is the strongest or the sensitivity of the latter is the strongest.
  • FIG. 1 it can be seen that there is shown a semiconductor device 1 which comprises a silicon substrate 2 on which are made different superimposed layers 3.
  • a screen collector 4 In layers near the substrate 2 is made a screen collector 4 and in a layer close to the final layer is achieved an antenna 5 transmitting / receiving radio signals.
  • the collector screen 4 is made in the following manner.
  • a layer 3a On the substrate 2 is formed a layer 3a.
  • a branch is made main 6 which includes a longitudinal band 6a and two bands 6b and 6c inclined at 45 ° and symmetrically with respect to the direction of the longitudinal band 6a, so that the longitudinal band 6a and the two inclined strips 6b and 6c form a Y.
  • a multiplicity of secondary branches 7 which are connected by vias 8 to the branch 6 and which determine with the latter a structure tree.
  • this multiplicity of secondary branches 7 comprises a multiplicity of transverse bands 7a and 7b which extend from and other of the longitudinal band 6a of the main branch 6 and join in this band 6a, vias 8a connecting these junctions to the longitudinal band 6a.
  • the multiplicity of secondary branches 7 also includes a multiplicity of transverse bands 7c that extend externally to the area between the two inclined strips 6b and 6c of the main branch 6 and a multiplicity of longitudinal bands 7th which extend in this zone, such as the transverse bands 7c and the longitudinal strips 7e form L and join under the band 6b, vias 8b connecting these junctions to the inclined band 6b.
  • the multiplicity of secondary branches 7 further comprises a multiplicity of transverse bands 7d which extend externally to the area between the two inclined strips 6b and 6c of the branch principal 6 and a multiplicity of longitudinal bands 7f which extend into this zone, such as the transverse bands 7d and the longitudinal strips 7f form L and join under the strip 6c, vias 8c connecting these junctions to the inclined band 6b.
  • transverse strips 7a and 7c on the one hand and the strips transversals 7b and 7d on the other hand are regularly distributed and the longitudinal bands are regularly spaced and are only connected to the main branch 6.
  • the lengths of these bands are such they extend over a rectangular area.
  • 3d layer Above the 3d layer is a 3rd layer in which is made a via 9 connected to the end portion of the strip 6a of the main branch 6 opposite its bands 6b and 6c and, above of this layer 3e is provided a layer 3f in which is performed a longitudinal band 10 connected to via 9.
  • the layer 3f is provided at least one layer 3g.
  • a penultimate layer 3h is carried out the antenna 5 and above of this layer 3h is provided a last layer 3i of passivation.
  • the dipole antenna 5 comprises two strands 11 and 12 which comprise two longitudinal strips 11a and 12a which are close to each other and which extend parallel, above the longitudinal strip 6a of the collector screen 4, and two strips 11b and 12b which extend opposite each other.
  • branches 11a and 12a of the antenna 5 are connected to an integrated component not represented by means not shown, this component being a signal transmitter electrical when it is a signal-transmitting antenna radio or an electrical signal receiver when it comes an antenna receiving radio signals.
  • the antenna 5 and the collector screen 4 are arranged relative to each other to the other so that the junction area A strips 11a, 11b and 12a, 12b of the antenna 5 is above the junction zone E of the strips 6a, 6b and 6c of the collector screen 4.
  • the length of the transverse strips 11b and 12b of the antenna 5 is smaller than the length of the transverse strips 7a and 7b of the collector screen 4, so that the antenna 5 is completely covered by the collector screen 4.
  • the strips 6a, 6b and 6c constituting the main branch 6 of the screen collector 4 are angularly offset with respect to the strips 11b and 12b of the antenna 5, the band 6a of 90 ° and the bands 6b and 6c of 45 °.
  • the longitudinal strip 10 of the collector screen 4 extends to the opposite of the area covered by the latter so as to be connected to another part of the semiconductor device 1 to a fixed potential such as a mass.
  • this longitudinal branch 10 could to be connected to the ground of the antenna 5 or the via 9 could be extended to be connected to the ground of the antenna 5.
  • the collector screen 4 has the function of collecting the currents induced by electrostatic coupling between the antenna 5 and the substrate in silicon 2. Its tree structure, which also has the same plan of symmetry that the antenna 5 in which the collector screen 4 and the antenna 5 have corresponding longitudinal axes of symmetry, avoids that the induced currents circulate in a loop.
  • the collector screen 13 shown in FIG. 4 is made, unlike the previous example, in a single layer of the device semiconductor 1, for example in layer 3b.
  • This collector screen 13 comprises, like the collector screen 6, a main branch 14 which has a longitudinal band 14a and two inclined strips 14b and 14c.
  • This main branch 14 further comprises two strips 14d and 14th, inclined at 45 ° and opposite to the bands 14b and 14c, so that the strips 14a, 14b, 14c and 14d form a cross.
  • the collector screen 13 furthermore comprises a multiplicity of secondary branches 15 associated with the inclined bands 14a, 14b, 14c and 14d and which comprise longitudinal strips 15a and strips transversals 15b which, as in the previous example, constitute L spaced.
  • the collector screen 13 has a tree structure whose bands 15a and 15b of its secondary branches 15 are only connected to the strips 14a, 14b, 14c and 14d of its main branch 14 by one of their ends, this collector screen 13 also extending over a rectangular area.
  • the area E of the collector screen 13, such as previously defined, is located at the center where at the junction point of the cross formed by the bands 14a, 14b, 14c and 14d of its branch main 14.
  • collector screen 16 which is also made in a single layer of semiconductor device 1.
  • This collector screen 16 comprises a main branch 17 which this time comprises only a longitudinal band 17a.
  • This collector screen 16 also includes a multiplicity of secondary branches 18 which include transverse bands opposed and spaced 18a and 18b connected by one of their ends to the longitudinal band 17a, so that this collector screen also has a tree structure that also extends over a rectangular area.
  • the area E of the collector screen 13, such as previously defined, is located at half the length of the band 17a constituting its main branch 17.
  • collector screen 19 which is also made in a single layer of semiconductor device 1.
  • This collector screen 19 comprises a main branch 20 which this time includes a short longitudinal strip 20a and strips opposite transversals 20b and 20c which meet at the end of the longitudinal band 20a.
  • This collector screen 19 also includes a multiplicity of secondary branches 21 which comprise longitudinal strips spaced 21a connected by one of their ends to the transverse strip 20b, so that this collector screen also has a structure tree that also extends over a rectangular area.
  • the area E of the collector screen 13, such as previously defined, is located in the center of this rectangular area.
  • the antenna 22 shown in FIG. 7 comprises a first part 23 constituted by a central square zone 24 and a strip longitudinal longitudinal 25 of connection to a circuit of the semiconductor component 1, and a second portion 26 constituted by a zone broad surrounding at a short distance the periphery of the central zone 24 and extending to near the longitudinal band 25.
  • the field of the antenna 22 is the strongest or the sensitivity of this last is the strongest in the area of the space separating his area central 24 and its peripheral zone 26.
  • the area A of the antenna 22, as defined previously, is located in the center of the square zone 23.
  • the antenna 27 shown in FIG. 8 comprises a ring circular opening 28, the ends of which are connected to strips medial longitudinal axes 29 and 30 close to each other and connection to a circuit of the semiconductor component 1.
  • the field of the antenna 27 is the strongest or the sensitivity of this last is the strongest in the ring 28 area.
  • the area A of the antenna 27, as defined previously, is located in the center of the circular ring 28.
  • collector screens cover the surfaces of the antennas.
  • the materials used to make the strips constituting the collector screens described above have a conductivity preferably between 0.1E7 and 6E7 S / m. We can advantageously realize them in aluminum, in tungsten or in polysilicon.
  • the main branches of collector screens are metallic and their secondary branches are in polysilicon.
  • the materials used to make the antennas described previously can be selected from aluminum, copper, tungsten or gold.
  • These antennas can be calculated to present a range of a few centimeters to a few tens of meters and to emit or receive radio signals on particular frequencies greater than 2 gigahertz

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Details Of Aerials (AREA)
EP05290458A 2004-03-16 2005-03-02 Halbleiterbauelement mit Antenne und Abschirmung Expired - Lifetime EP1580837B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0402710 2004-03-16
FR0402710A FR2867899A1 (fr) 2004-03-16 2004-03-16 Dispositif semi-conducteur a antenne et ecran collecteur

Publications (2)

Publication Number Publication Date
EP1580837A1 true EP1580837A1 (de) 2005-09-28
EP1580837B1 EP1580837B1 (de) 2007-06-06

Family

ID=34855142

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05290458A Expired - Lifetime EP1580837B1 (de) 2004-03-16 2005-03-02 Halbleiterbauelement mit Antenne und Abschirmung

Country Status (4)

Country Link
US (1) US7180450B2 (de)
EP (1) EP1580837B1 (de)
DE (1) DE602005001282D1 (de)
FR (1) FR2867899A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007107923A1 (en) * 2006-03-17 2007-09-27 Nxp B.V. Antenna device and rf communication equipment

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2878081B1 (fr) * 2004-11-17 2009-03-06 France Telecom Procede de realisation d'antennes integrees sur puce ayant une efficacite de rayonnement ameliore.
FR2963704A1 (fr) * 2010-08-05 2012-02-10 St Microelectronics Crolles 2 Cellule photovoltaïque et capteur autonome
TWI568079B (zh) * 2015-07-17 2017-01-21 緯創資通股份有限公司 天線陣列
US9837453B1 (en) * 2016-09-09 2017-12-05 International Business Machines Corporation Self-sufficient chip with photovoltaic power supply on back of wafer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4654622A (en) * 1985-09-30 1987-03-31 Honeywell Inc. Monolithic integrated dual mode IR/mm-wave focal plane sensor
US5386215A (en) * 1992-11-20 1995-01-31 Massachusetts Institute Of Technology Highly efficient planar antenna on a periodic dielectric structure
US6424315B1 (en) * 2000-08-02 2002-07-23 Amkor Technology, Inc. Semiconductor chip having a radio-frequency identification transceiver
US20030132430A1 (en) * 2002-01-11 2003-07-17 Taiwan Semiconductor Manufacturing Co., Ltd. Chip-antenna apparatus and method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02214205A (ja) * 1989-02-14 1990-08-27 Fujitsu Ltd 電子回路装置
JP2840493B2 (ja) * 1991-12-27 1998-12-24 株式会社日立製作所 一体型マイクロ波回路
JP3141692B2 (ja) * 1994-08-11 2001-03-05 松下電器産業株式会社 ミリ波用検波器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4654622A (en) * 1985-09-30 1987-03-31 Honeywell Inc. Monolithic integrated dual mode IR/mm-wave focal plane sensor
US5386215A (en) * 1992-11-20 1995-01-31 Massachusetts Institute Of Technology Highly efficient planar antenna on a periodic dielectric structure
US6424315B1 (en) * 2000-08-02 2002-07-23 Amkor Technology, Inc. Semiconductor chip having a radio-frequency identification transceiver
US20030132430A1 (en) * 2002-01-11 2003-07-17 Taiwan Semiconductor Manufacturing Co., Ltd. Chip-antenna apparatus and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007107923A1 (en) * 2006-03-17 2007-09-27 Nxp B.V. Antenna device and rf communication equipment
US8035565B2 (en) 2006-03-17 2011-10-11 Nxp B.V. Antenna device and RF communication equipment

Also Published As

Publication number Publication date
FR2867899A1 (fr) 2005-09-23
EP1580837B1 (de) 2007-06-06
US7180450B2 (en) 2007-02-20
DE602005001282D1 (de) 2007-07-19
US20050206576A1 (en) 2005-09-22

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