EP1570277B1 - Herstellungsverfahren eines sockels zur testdurchführung integrierten schaltungen und ein solcher sockel - Google Patents

Herstellungsverfahren eines sockels zur testdurchführung integrierten schaltungen und ein solcher sockel Download PDF

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Publication number
EP1570277B1
EP1570277B1 EP03796616A EP03796616A EP1570277B1 EP 1570277 B1 EP1570277 B1 EP 1570277B1 EP 03796616 A EP03796616 A EP 03796616A EP 03796616 A EP03796616 A EP 03796616A EP 1570277 B1 EP1570277 B1 EP 1570277B1
Authority
EP
European Patent Office
Prior art keywords
socket
depositing
interconnect structure
contact elements
fabricating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
EP03796616A
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English (en)
French (fr)
Other versions
EP1570277A2 (de
Inventor
Igor K. Khandros
Gaetan L. Mathieu
Carl V. Reynolds
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FormFactor Inc
Original Assignee
FormFactor Inc
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Filing date
Publication date
Application filed by FormFactor Inc filed Critical FormFactor Inc
Publication of EP1570277A2 publication Critical patent/EP1570277A2/de
Application granted granted Critical
Publication of EP1570277B1 publication Critical patent/EP1570277B1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0433—Sockets for IC's or transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0433—Sockets for IC's or transistors
    • G01R1/0483—Sockets for un-leaded IC's having matrix type contact fields, e.g. BGA or PGA devices; Sockets for unpackaged, naked chips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07364—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
    • G01R1/07378—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch using an intermediate adapter, e.g. space transformers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01055—Cesium [Cs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T29/00—Metal working
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    • Y10T29/49117—Conductor or circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49147—Assembling terminal to base
    • Y10T29/49149—Assembling terminal to base by metal fusion bonding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T29/49179—Assembling terminal to elongated conductor by metal fusion bonding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T29/49194—Assembling elongated conductors, e.g., splicing, etc.
    • Y10T29/49195—Assembling elongated conductors, e.g., splicing, etc. with end-to-end orienting
    • Y10T29/49197—Assembling elongated conductors, e.g., splicing, etc. with end-to-end orienting including fluid evacuating or pressurizing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T29/49204—Contact or terminal manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T29/4921—Contact or terminal manufacturing by assembling plural parts with bonding
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    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/532—Conductor
    • Y10T29/53209—Terminal or connector
    • Y10T29/53213—Assembled to wire-type conductor
    • Y10T29/53217—Means to simultaneously assemble multiple, independent conductors to terminal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T29/53265—Means to assemble electrical device with work-holder for assembly

Definitions

  • This invention is directed to a socket for an integrated circuit. More particularly, the socket is a test or burn-in socket for connecting an integrated circuit to a tester for final testing or a burn-in board for burn-in.
  • Testing of semiconductor chips is an important operation in semiconductor manufacturing. Different types of tests are performed at different stages of a semiconductor chip manufacturing process. For example, initial tests can be performed on a wafer scale when semiconductor chips have been fabricated on a wafer, but have not yet been diced and packaged. These initial tests may help to identify defective chips prior to performing more expensive and time consuming packaging steps. After the initial testing, a wafer is diced and individual semiconductor chips are packaged. More exacting tests and burn-in operations are then performed on a chip scale to evaluate individual semiconductor chips or groups of multiple chips.
  • WO 96/15458 A1 proposes a method for forming resilient contact elements having a bonded wire and a contact structure having contact tips.
  • the resilient contact elements are formed on a sacrificial substrate.
  • a masking layer having openings therein is used to form the contact structure, while the tips are formed by embossing the sacrificial substrate.
  • Each one of the contact elements is separated from the sacrificial substrate.
  • the contact element may then be used attached to an interposer of a probe card assembly for testing a semiconductor waver.
  • resilient contact elements are attached to a space transformer and extending upward.
  • the upper section of the contact elements is needle-like and guided in through holes up to the bottom side of an IC to be tested and having BGA contacts corresponding to the tip's pitch pattern of the contact elements.
  • the through holes allow vertical movement of the contact elements while they fix the lateral movement.
  • Embodiments of the present invention provide a method including the steps of fabricating elements (e.g., cavities) in a sacrificial substrate, fabricating a contact structure utilizing the elements in the sacrificial substrate, fabricating an interconnect structure utilizing the contact structure, and fabricating a testing board utilizing the interconnect structure.
  • Other embodiments of the present invention provide a burn-in socket manufactured by this method.
  • the system includes a socket.
  • the socket includes a board, an interconnect structure manufactured to be insertable into the socket, the interconnect structure being coupled to the board.
  • the interconnect structure includes a substrate and first and second pads coupled to the substrate and coupled to each other through vias running through the substrate, the second pads coupling the interconnect structure to the board.
  • the interconnect structure also includes resilient contacts coupled to the first pads, the resilient contacts interacting with the integrated circuit during the testing.
  • the socket also includes a support structure coupled to the board that secures contact between the integrated circuit board and the resilient contacts during the testing.
  • Embodiments of the invention provide an interconnect structure that is inexpensively manufactured and easily insertable into a socket.
  • the interconnect structure is manufactured by forming a sacrificial substrate with cavities that is covered by a masking material having openings corresponding to the cavities.
  • a first plating process is performed by depositing conductive material, followed by coupling wires within the openings and performing another plating process by depositing more conductive material.
  • the interconnect structure is completed by first removing the masking material and sacrificial substrate. Ends of the wires are coupled opposite now-formed contact structures to a board.
  • a support device is coupled to the board to hold a tested integrated circuit.
  • FIGs. 1A-1B show side and bottom views, respectively, of a semiconductor chip 100 (e.g., an integrated circuit (IC)) that is to be tested according to embodiments of the present invention.
  • Semiconductor chip 100 can be packaged or unpackaged.
  • Semiconductor chip 100 can be, but is not limited to, a flip-chip semiconductor with solder ball contacts 102 (e.g., "controlled collapse chip connection” (also known as "C4")). In general, any type of semiconductor chip and contacts can be used.
  • FIGs. 2-6 illustrate a process of making an interconnect structure (e.g., a tile) 514 ( FIG. 5 ) for a socket 600 ( FIG. 6 ).
  • an interconnect structure e.g., a tile
  • FIGs. 2A-2B show cross-sectional and bottom views, respectively, of a sacrificial substrate 200 according to the present invention.
  • Sacrificial substrate 200 can be any material into which elements (e.g., cavities) 202 can be formed. As its name implies, sacrificial substrate 200 can be dissolved, etched away, or otherwise removed from a final structure.
  • a copper or aluminum sheet or foil can be used for sacrificial substrate 200.
  • silicon, ceramic, titanium-tungsten, and the like can be used for the sacrificial substrate 200.
  • cavities 202 are formed in the sacrificial substrate 200.
  • cavities 200 can be formed by embossing, etching, or the like. As will be seen, cavities 200 correspond to contacts 102 on semiconductor chip 100.
  • FIGs. 3A-3B show cross-sectional and bottom views, respectively, of sacrificial substrate 200 with a masking material 300 applied.
  • masking material 300 can be a photoresist material.
  • openings 302 are formed in masking material 300. These openings 302 expose cavities 202 that were formed in FIG. 2 .
  • FIGs. 4A-4D show additional processing steps according to embodiments of the present invention.
  • a conductive material 400 is deposited or plated in openings 302.
  • conductive material 400 can be a hard, metallic, and/or electrically conductive material.
  • conductive material 400 can be a rhodium material and a palladium cobalt alloy.
  • conductive material 400 forms a contact tip 402 that is used to contact semiconductor chip 100 during testing.
  • contact tip 402 can have one or more extensions as required by different specifications and embodiments.
  • contact tip 402 can be made of a plurality of layered materials, for example a soft gold layer, a nickel layer, and a hard gold layer.
  • an non-exhaustive list of other materials can include: silver, palladium, platinum, rhodium, conductive nitrides, conductive carbides, tungsten, titanium, molybdenum, rhenium, indium, osmium, refractory metals, or the like.
  • conductive material 400 will be used, and this term is meant to include one or more materials, and if more than one material, layered materials.
  • Conductive material 400 can be deposited in openings 302 using any suitable method. In various embodiments, the deposition method can be electroplating, physical or chemical vapor deposition, sputtering, or the like. The layers that form the contact tip 402 may be deposited in a like manner.
  • a release material can be deposited in openings 302 before depositing conductive material 400.
  • Use of a release material facilitates eventual removal of a contact structure 506 ( FIG. 5B ) formed by conductive material 400 from sacrificial substrate 200.
  • a release layer can be a layer of aluminum.
  • a seed layer consisting of a conductive material can also be deposited in openings 302 before depositing conductive material 400.
  • the seed layer can be deposited as a blanket layer over the entire sacrificial substrate 200 prior to depositing masking material 300. The seed layer can facilitate electroplating, if electroplating is used to deposit conductive material 400.
  • FIG. 4B shows a wire 404 being bonded in each opening 302 to conductive material 400 according to embodiments of the present invention.
  • Wire 404 can be bonded using well known wire bonding techniques.
  • wire bonding technique is found in U.S. Patent No. 5,601,740 to Eldridge et al. .
  • wire 404 can be made of a relatively soft, readily shapeable material, while in other embodiments other types of materials can be used. Examples of materials that can be used for wire 404 include gold, aluminum, copper, platinum, lead, tin, indium, their alloys, or the like.
  • the diameter of wire 404 can be in the range 6.35 to 254 ⁇ m (0.25 to 10 mils). It is to be appreciated, wire 404 can have other shaped cross-sections, such as rectangular or any other shape.
  • FIG. 4C shows wires 404 and conductive material 400 being plated with a second conductive material 406.
  • conductive material 406 is harder than a material making up wire 404 to strengthen the contact structure 506 ( FIG. 5B ).
  • suitable materials include, nickel, copper, solder, iron, cobalt; tin, boron, phosphorous, chromium, tungsten, molybdenum, bismuth, indium, cesium, antimony, gold, lead, tin, silver, rhodium, palladium, platinum, ruthenium, their alloys, or the like.
  • conductive material 406 can be 5 to 254 ⁇ m (0.2 to 10 mils) thick.
  • Conductive material 406 can be deposited on wire 404 using any suitable method.
  • deposition methods include electroplating, physical or chemical vapor deposition, sputtering, or the like.
  • Example methods for wire bonding a wire and then over plating the wire are described in U.S. Patent No. 5,476,211 to Khandros , U.S. Patent No. 5,917,707 to Khandros et al. , and U.S. Patent No. 6,336,269 to Eldridge et al. .
  • FIG. 4D illustrates the process after masking material 300 has been removed.
  • FIGs. 5A-5B show additional processing steps according to embodiments of the present invention.
  • FIG. 5A shows free ends 500 of wires 404 having conductive coating 406 being coupled to a wiring substrate 502 through use of coupling material 504.
  • the coupling can be done by wiring, soldering, brazing, or the like.
  • the step of coupling free end 500 of wires 404 having conductive coating 406 includes heating, wires 404 and contact structure 506 ( FIG. 5B ) can also be heat treated.
  • U.S. Patent No. 6,150,186 to Chen et al. which is incorporated herein by reference in its entirety, and which discloses methods for heat treating spring contact structures.
  • Wiring substrate 502 can be a ceramic substrate with pads 508 and 510 on opposite sides of wiring substrate 502. The pads 508 and 510 can be coupled through the use of vias 512 that run through wiring substrate 502. In other embodiments, wiring substrate 502 can be a printed circuit board or a printed wiring board. As also shown in FIG. 5B , sacrificial substrate 200 is removed, which can be done by etching, dissolving, or the like, the material forming sacrificial substrate 200. Another term for the wiring substrate 502 having contact elements 506, the pads 508, 510 and vias 512 is an interconnect structure 514.
  • interconnect structure 514 can be used to make a test or burn-in socket 600 ( FIG. 6 ).
  • interconnect structure 514 can be a modular interconnect structure, a drop-in interconnect structure, a plug-in interconnect structure, or the like, that is easily inserted into the socket 600, or any other socket.
  • interconnect structure 514 can be inexpensive and can be performed separately on a interconnect structure. In this way, defective interconnect structures can be identified and removed prior to formation of the socket.
  • This process has further advantages in that a interconnect structure with contact elements arranged at a fine pitch of less than 40 mils, including about 10 mils or less, can be made inexpensively and mass produced. Accordingly, this process is a reliable and inexpensive technique for producing a fine pitch socket.
  • FIG. 6 shows a socket 600 in which interconnect structure 514 is coupled and electrically wired to a board 602 (e.g., a test board or socket board) according to embodiments of the present invention.
  • board 602 can include a support structure 604 with a hinged closing device 606 for holding integrated circuit (IC) 100 during testing.
  • board 602 can be a test board or burn-in board.
  • Interconnect structure 514 can electrically connected to board 602 in any suitable manner, such as by soldering 608, pins (not shown), or any other type of contact.
  • the pins can form a friction fit with corresponding holes (not shown).
  • board 602 can be a socket board that is itself plugged into or otherwise attached to a larger test system (not shown).
  • FIG. 7 shows an embodiment with multiple interconnect structures 700 coupled to board 702 according to the present invention. Although shown with multiple IC's 100, in other embodiments one IC 100 with many ball contacts 102 can be tested. In this embodiment, an array of spring contacts 704 for contacting IC 100 is built by coupling a plurality of interconnect structures 700 to board 702 in various configurations depending on the configuration of ball contacts 102. As discussed above, in various embodiments board 702 can be a test board or burn in board, and a plurality of support structures similar to 604 (not shown in FIG. 7 for convenience) can be secured to board 702 around interconnect structures 700.
  • FIG. 8 shows a method 800 for making sockets according to embodiments of the present invention.
  • a sacrificial substrate is formed with any type or amount of elements formed in the substrate as desired. For example, cavities can be formed as depicted in FIG. 2 .
  • plated wires are formed based on the sacrificial substrate. This can be done through the various methods as described with respect to FIGs. 3-4 .
  • an interconnect structure is formed based on the plated wires. This can be done through the various methods described with respect to FIG. 5 .
  • a socket is formed based on the interconnect structure. Thus can be done through the various methods described with respect to FIGs. 6 and 7 .
  • FIG. 9 shows a flowchart depicting a more detailed method 900 for making sockets according to embodiments of the present invention.
  • cavities e.g. elements or cavities 202
  • a sacrificial substrate e.g., substrate 200
  • a masking material e.g., masking material 300
  • openings e.g., openings 302
  • conductive material e.g., conductive material 400
  • wires e.g., wires 404 are coupled to the conductive material.
  • a second conductive material e.g., conducting material 406 is deposited or plated on the wires and the first conductive material.
  • the masking material is removed.
  • a coupling material e.g., coupling material 504 is used to couple tips (e.g., tips 500) of the wires having the conductive material to a wiring substrate (e.g., wiring substrate 502).
  • the sacrificial substrate is removed to form an interconnect structure (e.g., interconnect structure 514 or 700).
  • the interconnect structure is coupled to a board (e.g., board 602 or 702) to form a socket (e.g., socket 600).

Claims (30)

  1. Verfahren zum Herstellen eines Sockels (600) mit einem Schaltungsaufbau (514), welches folgende Schritte aufweist:
    Herstellen federnd elastischer Kontaktelemente (400, 404) auf einem Opfersubstrat (200), welches Aushöhlungen (202) zur Bildung von Spitzen (402) der Kontaktelemente aufweist, wobei das Herstellen von Kontaktelementen aufweist:
    Ablegen eines Abdeckmaterials (300) auf dem Opfersubstrat (200);
    Bilden von Öffnungen (302) in dem Abdeckmaterial (300) entsprechend den Elementen (400, 404) und Exponieren der Aushöhlungen (202);
    Ablegen eines ersten leitfähigen Materials (400) in den Öffnungen (302);
    Verbinden eines Drahtes (404) mit dem leitenden Material (400) in jeder der Öffnungen (302);
    Ablegen von zweitem leitfähigem Material (406) über den Drähten (404); und
    Entfernen des Abdeckmaterials (300);
    Herstellen eines Schaltungsaufbaues (514) durch Anbringen der freien Enden der Drähte (404) der Kontaktelemente (400, 404) an einem Verdrahtungssubstrat (502), welches elektrische Leitstrecken abstützt, und zwar durch Verbinden der elektrischen Leitstrecken mit den freien Enden gegenüber den Spitzen und dann Entfernen des Opfersubstrats (200); und
    Herstellen eines Sockels (600), der eine Sockelplatte (602) hat und ausgestaltet ist, um ein Halbleiterplättchen (100), welches zu Testzwecken von einem Wafer geschnitten ist, zu halten, wobei das Herstellen des Sockels (600) das Anbringen des Schaltungsaufbaus (514) an die Sockelplatte (602) aufweist.
  2. Verfahren nach Anspruch 1, wobei der Schritt der Herstellung von Kontaktelementen die folgenden Schritte aufweist:
    Herstellen von Mehrfachaushöhlungen (202) in dem Opfersubstrat (200) für jedes Kontaktelement (400, 404); und
    Vorsehen des leitfähigen Materials (400) in den Aushöhlungen zur Bildung von Spitzen der Kontaktelemente (400, 404).
  3. Verfahren nach Anspruch 2, ferner mit dem Schritt des Ausarbeitens oder Ätzens des Opfersubstrates (200) zur Durchführung des Schrittes der Herstellung von Aushöhlungen.
  4. Verfahren nach Anspruch 1, ferner mit dem Schritt des Bildens des Opfersubstrates (200) aus Kupfer oder Aluminium oder Silizium oder Keramik oder Titan-Wolfram.
  5. Verfahren nach Anspruch 1, ferner mit dem Schritt des Nutzens von lichtbeständigem Material als Abdeckmaterial (300).
  6. Verfahren nach Anspruch 1, ferner mit dem Schritt des Verwendens von hartmetallischem Material oder Rhodiummaterial als das erste leitfähige Material (400).
  7. Verfahren nach Anspruch 1, wobei der Schritt des Ablegens von erstem leitfähigem Material folgende Schritte aufweist:
    Ablegen einer weichen Goldschicht;
    Ablegen einer Nickelschicht und
    Ablegen einer harten Goldschicht.
  8. Verfahren nach Anspruch 1, wobei der Schritt des Ablegens von erstem leitfähigem Material den Schritt des Verwendens des Elektroplattierens oder Aufdampfens oder Sputterns aufweist, um das Ablegen durchzuführen.
  9. Verfahren nach Anspruch 1, ferner mit dem Schritt des Ablegens eines Abgabemateriales in den Öffnungen (302) vor der Durchführung des Schrittes des Ablegens von erstem leitfähigem Material.
  10. Verfahren nach Anspruch 9, wobei der Schritt des Ablegens eines Abgabematerials den Schritt des Verwendens von Aluminium als das Ablegematerial aufweist.
  11. Verfahren nach Anspruch 1, ferner mit dem Schritt des Ablegens einer Impfschicht in der Öffnung (302) vor der Durchführung des Schrittes des Ablegens von erstem leitfähigem Material.
  12. Verfahren nach Anspruch 1, ferner mit dem Schritt des Ablegens einer Impfschicht über das Opfersubstrat (200) vor der Durchführung des Schrittes des Ablegens von Abdeckmaterial.
  13. Verfahren nach Anspruch 1, wobei der Schritt des Verbindens eines Drahtes den Schritt der Verwendung von weichem, formbarem Material oder Gold oder Aluminium oder Kupfer oder Platin oder Blei oder Zinn oder Indium oder einer Legierung für diesen Draht (404) aufweist.
  14. Verfahren nach Anspruch 1, ferner mit dem Schritt des Verwendens eines härteren Materials für das zweite leitfähige Material (406) als das Material, welches für den Draht (404) verwendet wird, um einen Kontaktaufbau zu verstärken.
  15. Verfahren nach Anspruch 1, wobei der Schritt des Verbindens den Schritt des Verwendens von Verdrahtungs- oder Löt- oder Wärmetechniken aufweist, um die freien Enden der Drähte (404) mit dem Verdrahtungssubstrat (502) zu verbinden.
  16. Verfahren nach Anspruch 1, ferner mit den Schritten des Bildens des Verdrahtungssubstrates (502) durch:
    Verbinden erster und zweiter Auflagen (508, 510) mit gegenüberliegenden Seiten eines Substrates; und
    Zusammenschalten der ersten und zweiten Auflage (508, 510) mit Durchkontaktierungen (512), welche zur Bildung der elektrischen Leitstrecken durch das Substrat hindurch laufen.
  17. Verfahren nach Anspruch 16, wobei der Schritt des Bildens des Verdrahtungssubstrates (502) den Schritt des Verwendens eines keramischen Materials aufweist, um das Substrat zu bilden.
  18. Verfahren nach Anspruch 1, ferner mit dem Schritt des Verbindens eines Stützaufbaus (604) mit der Sockelplatte (602), um das Halbleiterplättchen (100) vollständig innerhalb des Sockels (600) zu halten, welcher die Sockelplatte aufweist.
  19. Verfahren nach Anspruch 1, ferner mit folgendem Schritt:
    Anbringen eines Stützaufbaues (604) an der Sockelplatte (602), um das Halbleiterplättchen (100) in dem Sockel (600) während des Testens gegen die Kontaktelemente (400, 404) zu halten, wobei der Stützaufbau durch ein Drehgelenk mit der Sockelplatte verbunden ist.
  20. Verfahren nach Anspruch 1, wobei der Schritt des Herstellens eines Schaltungsaufbaues das Herstellen einer Vielzahl von Schaltungsaufbauten (514) aufweist, wobei jeder Schaltungsaufbau ein Verdrahtungssubstrat (502) mit den federnd elastischen Kontaktelementen (400, 404) aufweist und wobei der Schritt des Herstellens eines Sockels das Ausgestalten der Sockelplatte (602) zum Abstützen einer Vielzahl von Halbleiterplättchen (100) aufweist, die aus einem Wafer geschnitten sind, um gleichzeitig die Vielzahl von Schaltungsaufbauten zu kontaktieren.
  21. Verfahren nach Anspruch 1, ferner mit folgenden Schritten:
    Aufnehmen des Schaltungsaufbaues (514) in einer Aushöhlung, die von dem Sockel (600) gebildet ist, wobei der Sockel ein Bodenteil und zwei Seitenteile (604) aufweist, die an dem Bodenteil angebracht sind, um die Aushöhlung zu bilden; und
    Halten des Halbleiterplättchens (100) in der Aushöhlung des Sockels, um während des Testens mit den Spitzen der Kontaktelemente (400, 404) Kontakt sicherzustellen, wobei ein Oberteil (606) verwendet wird, das an einem Seitenteil (604) des Sockels durch ein Drehgelenk angebracht ist.
  22. Verfahren nach Anspruch 21, wobei das Halbleiterplättchen (100) eine integrierte Schaltung aufweist, die auf einem in einem Gebinde aufgenommenen Werkzeug vorgesehen ist.
  23. Verfahren nach Anspruch 1, ferner mit folgendem Schritt:
    Durchführen des Brennens beim Testen des Halbleiterplättchens (100), wobei das Halbleiterplättchen von der Sockelplatte (602) abgestützt wird.
  24. Verfahren nach Anspruch 1, mit folgenden Schritten:
    Vorsehen eines Halbleiterplättchens (100) in dem Sockel (600), so dass bei Anordnung des Halbleiterplättchens in dem Sockel elektrische Verbinder (102) des Halbleiterplättchens die federnd elastischen Kontaktelemente (400, 404) kontaktieren können; und
    Durchführen des Brennens beim Testen der Testvorrichtung, wobei das Halbleiterplättchen (100) in dem Sockel (600) gehalten wird.
  25. Verfahren nach Anspruch 1, ferner mit folgenden Schritten:
    Vorsehen der federnd elastischen Kontaktelemente (400, 404) auf einer Vielzahl der Verdrahtungssubstrate (502); und
    Ineingrifftreten mit einer Vielzahl von Halbleiterplättchen (100), deren jedes in einem Gebinde vorgesehen ist nach dem Zerschneiden aus einem Wafer, so dass jedes der Halbleiterplättchen (100) die federnd elastischen Kontaktelemente (400, 404) auf einem der Verdrahtungssubstrate (502) kontaktiert.
  26. System zum Anwenden einer integrierten Schaltung (100) mit:
    einem Sockel (600) mit einer Sockelplatte (602) und einer Ausgestaltung zum Haltern der integrierten Schaltung (100);
    wobei ein Schaltungsaufbau (514) hergestellt ist, um in den Sockel (600) einführbar zu sein, wobei der Schaltungsaufbau mit der Sockelplatte (602) verbunden ist, und mit:
    einem Verdrahtungssubstrat (502),
    ersten und zweiten Auflagen (508, 510), die mit dem Verdrahtungssubstrat (502) verbunden sind und miteinander über Durchkontaktierungen (512) verbunden sind, welche durch das Verdrahtungssubstrat laufen,
    wobei die zweiten Auflagen (510) den Schaltungsaufbau (514) mit der Sockelplatte (602) verbinden und
    federnd elastische Kontaktelemente (400, 404, 502) mit den ersten Auflagen (508) verbunden sind, die federnd elastischen Kontaktelemente während des Testens mit der integrierten Schaltung (100) wechselwirken, wobei jedes Kontaktelement einen an einem Ende an den ersten Auflagen (508) angebrachten Draht (404) aufweist und
    ein Stützaufbau (604) während des Testens den Kontakt zwischen der integrierten Schaltung (100) und den federnd elastischen Kontaktelementen (400, 404, 502) sicherstellt;
    dadurch gekennzeichnet, dass
    ein leitfähiges Material (406) über den Drähten jedes federnd elastischen Kontaktelementes abgelegt ist und
    das andere Ende der Drähte (404) jedes federnd elastischen Kontaktelementes mit einem Kontaktaufbau (506) einschließlich Kontaktspitzen (402) verbunden ist.
  27. System nach Anspruch 26, wobei der Schaltungsaufbau (514) ein modularer Schaltungsaufbau ist, welcher in den Sockel (600) hinein eingeführt ist.
  28. System nach Anspruch 26, wobei der Schaltungsaufbau (514) ein Drop-In-Schaltungsaufbau ist, der in den Sockel (600) hinein abgesenkt ist.
  29. System nach Anspruch 26, wobei der Schaltungsaufbau (514) ein Plug-In-Schaltungsaufbau ist, welcher in den Sockel (600) eingesteckt ist.
  30. System nach Anspruch 26, wobei der Sockel (600) eine Vielzahl der Schaltungsaufbauten (514) aufweist.
EP03796616A 2002-12-06 2003-12-02 Herstellungsverfahren eines sockels zur testdurchführung integrierten schaltungen und ein solcher sockel Expired - Fee Related EP1570277B1 (de)

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US310791 2002-12-06
US10/310,791 US6920689B2 (en) 2002-12-06 2002-12-06 Method for making a socket to perform testing on integrated circuits
PCT/US2003/038463 WO2004053976A2 (en) 2002-12-06 2003-12-02 Method of making a socket to perform testing on integrated circuits and such a socket

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EP1570277A2 EP1570277A2 (de) 2005-09-07
EP1570277B1 true EP1570277B1 (de) 2010-02-10

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EP (1) EP1570277B1 (de)
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KR (1) KR20050085387A (de)
CN (1) CN100538369C (de)
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DE (1) DE60331243D1 (de)
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TWI362711B (en) 2012-04-21
AU2003298856A8 (en) 2004-06-30
US6920689B2 (en) 2005-07-26
WO2004053976A3 (en) 2004-08-05
US20080132095A1 (en) 2008-06-05
US20040107568A1 (en) 2004-06-10
AU2003298856A1 (en) 2004-06-30
EP1570277A2 (de) 2005-09-07
CN1745307A (zh) 2006-03-08
WO2004053976A2 (en) 2004-06-24
TW200423277A (en) 2004-11-01
US20050167816A1 (en) 2005-08-04
CN100538369C (zh) 2009-09-09
DE60331243D1 (de) 2010-03-25
JP2006509215A (ja) 2006-03-16
KR20050085387A (ko) 2005-08-29
US7330039B2 (en) 2008-02-12

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