EP1550004A2 - Systeme d'eclairage comprenant un dispositif servant a regler l'intensite lumineuse - Google Patents

Systeme d'eclairage comprenant un dispositif servant a regler l'intensite lumineuse

Info

Publication number
EP1550004A2
EP1550004A2 EP03807802A EP03807802A EP1550004A2 EP 1550004 A2 EP1550004 A2 EP 1550004A2 EP 03807802 A EP03807802 A EP 03807802A EP 03807802 A EP03807802 A EP 03807802A EP 1550004 A2 EP1550004 A2 EP 1550004A2
Authority
EP
European Patent Office
Prior art keywords
plane
lighting system
light intensity
penumbra
adjusting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03807802A
Other languages
German (de)
English (en)
Inventor
Wolfgang Singer
Martin Antoni
Frank Melzer
Johannes Wangler
Joachim Hainz
Joachim Wietzorrek
Manfred Maul
Markus Weiss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of EP1550004A2 publication Critical patent/EP1550004A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Definitions

  • Lighting system with a device for adjusting the light intensity
  • the invention relates to an illumination system for wavelengths 157 157 nm, the illumination system comprising a radiation source that provides a bundle of light rays and a first optical component that has a first optical element with raster elements.
  • EUV lithography it is conceivable to use light with wavelengths less than 157 nm, for example lithography with soft X-rays, the so-called EUV lithography.
  • EUV lithography is one of the most promising in the future
  • Wavelengths in the range of 11-14 nm, in particular 13.5 nm, with a numerical aperture of 0.2-0.3 are currently being discussed as wavelengths for EUV lithography.
  • the image quality in EUV lithography is determined on the one hand by the projection lens and on the other hand by the lighting system.
  • the lighting system should be as uniform as possible
  • the projection lens depicts the field plane in an image plane, the so-called wafer plane, in which a light-sensitive object is arranged.
  • Projection exposure systems for EUV lithography are designed with reflective optical elements. The shape of the
  • the field of an EUV projection exposure system is typically that of a ring field with a high aspect ratio of 2 mm (width) x 22-26 mm (arc length).
  • the projection systems are usually operated in scanning mode.
  • EUV projection exposure systems reference is made to the following publications: W.Ulrich, S. Beiersdörfer, HJMann, "Trends in Optical Design of Projection Lenses for UV- and EUV-Lithography" in Soft-X-Ray and EUV Imaging Systems, WMKaiser, RHStulen (Hrsg), Proceedings of SPIE, Vol. 4146 (2000), pages 13-24 and
  • a problem with lighting systems for wavelengths 157 157 nm is that the light sources or radiation sources of such lighting systems are pulsed light sources which have strong pulse-to-pulse fluctuations. As a result, the exposure dose fluctuates greatly.
  • Another problem with projection exposure systems for wavelengths ⁇ 157 nm are different sensitivities, for example of the photoresist, of the objects which are arranged in the wafer plane of the projection exposure system or of measuring means used in the projection exposure system.
  • Light intensity is used for transmission filters which, for example, comprise chrome particles applied to a glass substrate, with which the density of the areas shaded by the filter and thus the light intensity can be varied.
  • filters which, for example, comprise chrome particles applied to a glass substrate, with which the density of the areas shaded by the filter and thus the light intensity can be varied.
  • EP 0952491 A2 in which such a filter is shown.
  • Also from US 6,051,842 is for wavelengths
  • transmissive filter element has become known that in the beam path of the lighting system is arranged after the light source and before an optical integrator.
  • Filters as known from EP 0952491 A2 or US Pat. No. 6,051,842, can be used in a lighting system because of the high light losses
  • Projection exposure system with a wavelength ⁇ 157nm are not used, in particular such filters would be very easily destroyed by excessive heat.
  • the object of the invention is to provide an illumination system for wavelengths ⁇ 157 nm, in particular in the EUV range, in which the disadvantages mentioned above can be avoided.
  • an illumination system for wavelengths ⁇ 157 nm is to be specified, in which the problems of fluctuating exposure doses are solved and in which the illumination intensity can be continuously weakened and thus adjusted.
  • Attenuation should be carried out in such a way that the structure of a structured mask, which is arranged in the reticle plane, does not depend on the weakening in the wafer plane in which the object to be exposed is arranged. Furthermore, the components of such a lighting system should be simple in construction and manufacture.
  • a lighting system which has a device for adjusting the light intensity for wavelengths ⁇ 157 nm, the device for adjusting the light intensity in the beam path between the radiation source and the first optical element with a plurality of Raster elements is arranged.
  • the arrangement of the device for adjusting the light intensity in the beam path in front of the first optical element with a plurality of raster elements means that the structure of the attenuator is not visible in the field plane, since the field is superimposed on the field plane in the field plane
  • Images of the plurality of raster elements is formed and, for example, one Shadowing occurs due to the structure of the attenuator at different locations on the respective raster elements.
  • An arrangement of the structures of the attenuator at a certain distance from the first optical element with raster elements is preferred, so that the shadows of the structures are not sharp, but are washed out.
  • An arrangement of the structures perpendicular to the scanning direction is particularly preferred, so that the shadows extend over entire first raster elements and thus over the entire field width of the field to be illuminated in the reticle plane, are imaged and superimposed on the first raster elements.
  • the lighting system has a second optical component which focuses the bundle of light beams emanating from the radiation source into an intermediate focus in an intermediate focus plane, an image of the radiation source being formed in the intermediate focus.
  • the intermediate focus plane is preferably in front of the first optical element
  • the diameter of the light source in the intermediate focus plane is approximately 10 mm. If the device for adjusting the light intensity is positioned in or near this image of the light source, the result is that the fine structure of the device for adjusting the light intensity is not visible in the field plane.
  • Light intensity means a device that generates a plurality of penumbra in the first plane, in which the first optical element with a plurality of raster elements is arranged.
  • Such an element with a multiplicity of devices for producing penumbra can be an element which comprises a self-supporting structure of webs which, in a special embodiment, result in a cross-line grating.
  • a variable setting of the light intensity in such a device is possible if the density of the Device for generating penumbra, here the number of webs increases, for example in the longitudinal direction of such an element.
  • a variable weakening can then be carried out by moving in the longitudinal direction.
  • the density of the first device for producing penumbra of the first element increasing in the longitudinal direction and the density of the second device for producing penumbra decreases with respect to the longitudinal direction of the first element, ie increases in the direction opposite to the longitudinal direction of the first element in the second element. If the first and second elements are now moved relative to one another, this results in a variable density of the penumbra and thus the light intensity in the first plane, in which the first optical element is arranged with a large number of raster elements.
  • both the first element and the second element are designed as self-supporting structures with webs resulting in a first and a second cross grating
  • the penumbras in the first plane in which the optical element is arranged with a plurality of raster elements, are a superimposition of these Elements created penumbra.
  • the angle between the four superimposed line gratings is maximum. For example, this is achieved in that the webs of the first element and the second
  • Elementes are arranged such that all the webs of the two superimposed line-cross grids enclose an angle greater than 30 °.
  • this can be achieved in that the
  • Webs of the first element are oriented at an angle of approximately 30 ° or approximately 120 ° to the side edge of the first optical element, the Side edge runs parallel to the longitudinal direction of the first optical element and the webs of the second optical element are oriented at an angle of approximately 60 ° and approximately 150 ° to the side edge of the second optical element, the side edge of the second optical element parallel to the longitudinal axis of the second optical element runs.
  • a third optical element with a structure of webs, resulting in a line-cross grating can be used
  • the webs preferably run at an angle of approximately 0 ° and approximately 90 ° to the side edge of the third optical element, the side edge of the third optical element being oriented parallel to the longitudinal direction of the first and second optical elements.
  • a device with a plurality of devices for producing penumbra to be pivoted about an axis of rotation, the axis of rotation being perpendicular to
  • the direction of the beam path is and in a second plane, which is parallel to the first plane, in which the first optical element with a plurality of raster elements is arranged.
  • Grid elements are arranged, can be varied and thus the light intensity.
  • a large number of devices for producing penumbra can, for example, be webs, resulting in a line or line-cross grating.
  • Another possibility of setting the light intensity is to use an optical device that is transmissive in the wavelength range of the EUV radiation
  • Component for example a silicon window, which in turn can be pivoted about an axis of rotation which is perpendicular to the direction of the beam path and lies in a second plane which is parallel to the first plane.
  • the path length is lengthened or shortened, and the intensity is increased or decreased in this way.
  • a normal incidence mirror can also be pivoted in the lighting system.
  • a normal incidence mirror is a mirror on which the rays of the light beam that passes through the projection exposure system from the light source to the object to be exposed strike at an angle of ⁇ 70 °.
  • the angles of incidence of the rays of the incident light bundle or beam bundle change and thus the reflectivity of the normal incidence mirror. In this way the intensity can be adjusted.
  • an aperture can be arranged in or near the intermediate focus plane. The size of the image of the light source and thus the light intensity can be influenced by enlarging or reducing the diaphragm diameter in the area of the intermediate focus.
  • a device for adjusting the light intensity it can be provided in combination with a diaphragm that the collector of the second optical component of the lighting system has devices with which the position of the intermediate focus of the intermediate focus plane can be adjusted relative to the diaphragm in the diaphragm plane.
  • defocusing the light intensity can be controlled in relation to the aperture level.
  • a particularly fast attenuator which can be used in a control loop to control the flow of a pulsed light source in order to compensate for the strong pulse-to-pulse fluctuations, is the combination of a mirror with a device for generating elastic vibrations
  • the invention also provides a projection exposure system with such an illumination system for imaging the structure of a mask arranged in the reticle plane onto a light-sensitive object in an object plane.
  • Figure 1 is a schematic view of a projection exposure system with a
  • Figure 2A-B shows a first embodiment of an attenuator, the one
  • Rotation axis is rotatable and thus affects penumbra and line density.
  • Figure 2C a first embodiment of an attenuator, in which the line density is influenced by methods.
  • FIGs 3a and 3b plan view of an attenuator according to Figure 2 in two positions
  • Figure 4 shows a second embodiment of an attenuator with individual elements rotatable about an axis of rotation for adjusting the light intensity
  • Figure 5 shows a single element to attenuate the light intensity
  • FIG. 6 shows a transmissive optical component as a third embodiment of an attenuator which can be rotated about an axis of rotation
  • FIG. 7A Fourth embodiment of an attenuator in the form of two normal incidence mirrors which can be rotated about an axis of rotation
  • FIG. 7B schematic diagram of a differential pump section in the vicinity of the intermediate image
  • Figure 8 plan view of a fifth embodiment of an attenuator, with a first line-cross grating
  • Figures 10a and 10b plan view of a fifth embodiment of an attenuator with a second line-cross grating Figure 11 Superposition of first and second line-cross grids
  • Figures 12a and 12b plan view of a fifth embodiment of an attenuator with a third and a fourth line-cross grating
  • FIG. 14A sixth embodiment of an attenuator with a mirror surface deformable by sound waves
  • FIG. 14B detail of an attenuator according to FIG. 14A
  • FIG. 15 lighting system with an attenuator according to Figure 14A-B
  • FIGS. 16 and 17 seventh embodiment of an attenuator with a collector that is decentred to cover an illumination system
  • the projection exposure system comprises a light source or a radiation source 1.
  • the light emitted by the light source 1, of which only four representative beams are drawn, is collected by a nested collector 3 and is applied to a first optical element, here a first faceted mirror 102 Numerous first raster elements, so-called field honeycombs, steered. In the present case, the first raster elements have a collecting effect.
  • the faceted mirror 102 is also referred to as a field honeycomb mirror.
  • Level 103 in which the field honeycomb mirror is arranged is largely homogeneous. Due to the collecting effect of the collector 3, the light source 1 becomes one Intermediate image Z mapped in an intermediate image plane. The intermediate image Z in the intermediate image plane 105 of the light source 1 is formed between the collector 3 and the first faceted mirror.
  • the collector 3 is a nested collector with a variety of around one
  • Rotation axis of rotationally symmetrical mirror shells The axis of rotation of the nested collector lies in the direction of the beam path of the light bundle from the light source 1 to the first optical element 102.
  • a diaphragm B can be arranged near the intermediate focus Z in a diaphragm plane 154.
  • the size of the image of the light source 1 in the intermediate focus Z and thus the illumination intensity can be adjusted by varying the aperture.
  • the light intensity can be set by one of the devices described below for setting the light intensity 150 for wavelengths ⁇ 157 nm, which is shown only schematically here.
  • the device for setting the light intensity 150 is for
  • Wavelengths ⁇ 157 nm are arranged in the beam path from the light source 1 to the first optical element 102 with a plurality of first raster elements in front of the first optical element 102.
  • the first optical element is arranged in a first plane 103 and the device 150 for adjusting the light intensity in a second plane 152 parallel thereto.
  • the lighting system is a double-faceted lighting system as disclosed in US Pat. No. 6,198,793 B1, the content of which is fully incorporated into the present application.
  • the system thus comprises a second optical element with raster elements 104, which are referred to as pupil honeycombs.
  • the optical elements 106, 108 and 110 essentially serve to shape the field in the field plane 114.
  • the reticle at the field level is a reflection mask. In the EUV projection system designed as a scanning system, the reticle can be moved in the direction 116 shown.
  • the exit pupil of the lighting system is largely homogeneously illuminated. The exit pupil coincides with the entry pupil of a subsequent one
  • the entrance pupil is located at the point of intersection of the main beam CR of a bundle of rays reflected from the reticle, which, for example, starts from the central field point (0,0) with the optical axis HA of the projection lens.
  • a projection objective 126 for example with six mirrors 128.1, 128.2, 128.3, 128.4, 128.5, 128.6 according to the US patent application 09/503640, images the reticle onto the object 124 to be exposed.
  • FIGS. 2A-C show first embodiments of a device for
  • the device can be pivoted about an axis of rotation 200 which is perpendicular to the light direction 202 and in a plane 204 which is parallel to the first plane 103, in which the first optical element 102 of the lighting system, which is not shown here, lies.
  • the device for adjusting the light intensity comprises a frame 210 in which a plurality of webs running parallel to the axis of rotation 200 are arranged. These webs 212 form penumbra in the first plane 103 (not shown in FIGS. 2A-C) in FIG.
  • the size of the penumbra can, as in Figure 2A shown can be influenced by rotating or pivoting about the axis of rotation. 2B Further, by twisting, as shown in Fig, or by methods in the convergent respectively. Divergent beam path, as shown in Figure 2C, the relative line density per unit area increases or decreases. This is shown in Figures 3A and 3B.
  • Figure 3A is a plan view of the
  • the device for adjusting the light intensity shown in the beam direction By rotating the device, the line density is increased, as shown in FIG. 3B, since the distance between the individual webs decreases.
  • the variable vignetting of the light bundle enables variable adjustment of the light intensity in this way.
  • FIG. 4 A second embodiment of the invention is shown in FIG.
  • the device for adjusting the light intensity according to FIG. 4 cannot be pivoted in its entirety about an axis of rotation, for example the axis of rotation 200, but rather comprises a multiplicity of thin plates 402 suspended in a frame, each about its own axis of rotation 404.1, 404.2, 404.3, 404.4, 404.5, 404.6, 404.7, 404.8, 404.9 and 410.10 are pivotable.
  • the variety of axes of rotation stands like that
  • the axis of rotation 200 of the embodiments of an attenuator shown in FIGS. 2 and 3A to 3B is perpendicular to the direction 406 of the beam path of the light bundle and lies in a second plane 408 which is parallel to the first plane 103 in which the first optical element 102 is arranged , As shown in Figure 5, by pivoting the individual thin plates
  • FIG. 6 shows an embodiment of the invention in which a transmissive optical component for wavelengths ⁇ 157 nm for variable attenuation of the
  • the transmissive optical component for wavelengths ⁇ 157 nm can be, for example, a silicon window or a hollow body into which a medium, for example a gas stream, is introduced.
  • Under hollow body can also, for example, a differential pump section z. B. be understood in the vicinity of the intermediate image of the source. In this regard, reference is made to FIG. 7B, which shows a hollow body.
  • a variable setting of the light intensity can in turn be made by rotating the entire component 602 about the axis of rotation 604, which is perpendicular to the beam direction 606 of the light path and in a second plane 608, which is parallel to the first plane 103, not shown, in which the first optical element 102 is arranged with raster elements.
  • Embodiment of the invention in which the device comprises a hollow body or a differential pump path, for example in the vicinity of the intermediate image of the source, into which a medium, for example a gas such as argon or helium, is introduced, in that the pressure of the gas stream and thereby the density of the gas is changed, which in turn permits a change in the light intensity via the change in the density of the gas flow supplied. Twisting is therefore not necessary.
  • a differential pump path is shown in Figure 7B.
  • FIG. 7A A further embodiment of the invention is shown in FIG. 7A.
  • the lighting device shown in FIG. 7 is again a
  • the device for adjusting the light intensity is now after the intermediate focus Z, but before the first optical element 704 with a A large number of first raster elements are arranged.
  • Device for adjusting the light intensity comprises a mirror 710, on which the rays of the light bundle are incident at angles ⁇ 70 ° to the normal to the mirror surface.
  • the mirror 710 is therefore a normal incidence mirror with a multiple coating.
  • the reflectivity of such mirrors is strongly angle-dependent due to the multiple coatings. If the mirror is rotated about the axis of rotation 712, the angles of incidence and thus the reflectivities of the mirror change. By rotating the mirror about the axis of rotation 712, it is possible to influence the light intensity.
  • the first can be used
  • FIGS. 8 to 13 show a further embodiment of a device for variable attenuation of the light intensity, which is used in the lighting system, for example at the in figure
  • the device 150 shown there can be arranged to attenuate the light intensity.
  • FIG. 8 shows the basic design of such a device.
  • the device comprises a filter element which lies completely in the second plane 152 shown in FIG. 1, which is parallel to the first plane 103, and in this second plane 152 an extension in the longitudinal direction 802 and a Has width 804.
  • the element has a plurality of devices for producing penumbra, the density of which increases in the longitudinal direction 802. By moving along the longitudinal direction 802 of the element shown in FIG. 8, the intensity of the light beam passing through the element can be variably adjusted due to the change in the density of the elements for producing penumbra.
  • the devices for producing penumbra are in the form of self-supporting structures and result in a cross-line grating.
  • the line-cross grid can be produced as a wire mesh, for example by etching the webs from a film.
  • the density of the elements for producing penumbra is varied in the exemplary embodiment shown in that the distance between the webs 806 is successively reduced while the web width remains the same.
  • the distance 808 between the webs 806 and thus the course of the web density is preferably set such that the transmission decreases in accordance with an expotential function and thus a constant one
  • Density gradient results.
  • the length i. H. the length of the element in the longitudinal direction, 200 mm.
  • the webs have a width of 0.1 mm in the area of low density. Holes of 35 ⁇ m are made in the densest area of the element.
  • FIG. 9 shows a particularly preferred embodiment with elements according to FIG. 8.
  • elements 902, 904 which in
  • the longitudinal direction 906 can be moved relative to one another, as indicated by the arrows 908 and 910, the light intensity of a light beam 912 hitting the device with two elements can also be adjusted.
  • the light intensity of a light beam 912 hitting the device with two elements can also be adjusted.
  • the Crosspieces 914 of the line-cross grating are designed in such a way that, when the two grating structures are superimposed, the crosspieces intersect at an angle of> 30 °.
  • the second, opposite element can have a line-cross-lattice structure, as shown in FIGS. 10A or 10B.
  • FIGS. 10A or 10B The structure of the superimposed grating of the first element 902 and the second element 904 in the second plane 152, which is parallel to the first plane in which the first optical element with a plurality of raster elements is arranged, is shown in FIG.
  • FIGS. 10A or 10B The structure of the superimposed grating of the first element 902 and the second element 904 in the second plane 152, which is parallel to the
  • the webs 1206 of the first element 902 are inclined at 30 ° or 120 ° to the side edge 1208 of the first element 902, which is also referred to as an attenuator.
  • the second element 904 which is also referred to as an opposing attenuator, has webs 1210 and thus grid lines at 60 ° and 150 ° to the side edge 1212.
  • FIG. 13 shows the superimposed grid made up of the first element 902 and the second element 904 with a web arrangement according to FIGS. 12A and 12B in the second plane. In the embodiment according to FIGS.
  • the combination with a third element which is likewise designed as a line-cross grating with webs, would be possible, the webs being at an angle of 0 or 90 ° to the side edge of this optical element.
  • a third element can be designed as a fixed attenuator with 1% transmission.
  • FIG. 14A shows a further embodiment of the invention, in which a diaphragm B is arranged in a diaphragm plane.
  • a diaphragm as a device for adjusting the light intensity
  • the diameter of the diaphragm, for. B. changed by interpretation as a known iris and thereby the light flow through the diaphragm diameter can be varied.
  • a mirror 1401 can be used as a device for adjusting the light intensity
  • Mirror surface can be excited to vibrate, for example, by a transducer 1402.
  • the incident radiation 1400 to one such optical element is diffracted on a surface wave generated in this way.
  • gratings are built up with different grating periods.
  • any wavelength of the surface wave can be set and the light incident on the element can thus be diffracted into different solid angles.
  • a complete or partial diffraction into the aperture opening is thus possible; however, it is also possible for the diffracted reflex to be diffracted in a spatial direction, which impinges on the diaphragm and is therefore no longer available for illuminating the reticle and thus exposing the object to be exposed.
  • the light beam that meets the first condition is designated 1404, the
  • a particular advantage of this solution is that, due to the high propagation speed of sound in a solid, the grating can be quickly switched on and off, or strengthened and weakened. It is thus possible to control the intensity from one pulse of the light source to the next pulse of the light source by weakening the flow. In particular, it is possible to control the light intensity in the range of the speed of the pulse sequences, which is 1 to 5 kHz. Mechanical solutions, as described above, do not allow such rapid attenuation.
  • the surface of the mirror 1401 is shown in detail in FIG. 14B.
  • a surface wave is excited on the surface of the mirror by a transducer, for example with an amplitude of 10 nm and a period of, for example, 1 ⁇ m.
  • FIG. 15 shows a projection exposure system with an attenuator as shown in FIGS. 14A and 14B.
  • the same components as in FIG. 1a are identified by reference numbers that are higher by 2000.
  • the projection exposure system has a light source 2001 and a nested collector 2003.
  • the mirror 2401 In the beam path from the light source 2001 to the field level 2114, the mirror 2401, the surface of which can be excited to vibrate, is arranged behind the nested collector 2003.
  • a diaphragm B is arranged, which blocks light that is not diffracted into the intermediate focus Z by the surface waves, so that it does not get into the subsequent projection system.
  • the following projection system comprises a double-faceted lighting system with a first optical element 2102 with first
  • a double-faceted illumination system is known from US 6,198,793B1, a projection lens, for example from US patent application 09/503640, now US patent 6,353,470, the disclosure content of which is included in full.
  • FIGS. 16 and 17 show a further embodiment for variable light attenuation according to the invention, in which the
  • Lighting system again has an aperture B in an aperture plane.
  • the light of the light source 1 is focused with the aid of a collector 3 into an intermediate image Z of the light source in an intermediate image plane 1600. If the intermediate image plane 1600 coincides with the diaphragm plane 1602, then, as shown in FIG. 16, all the light received by the collector 3 enters the subsequent lighting system and thus strikes the first optical element with raster elements. If the collector 3 is defocused, that is, the intermediate image Z comes to rest in an intermediate image plane 1600 in front of the diaphragm plane 1602, as shown in FIG. 17, part of the light bundle of light from the light source 1 becomes the first optical element
  • Vignetted raster elements on the aperture 3 thus variably reducing the amount of light in the system.
  • the decrease in the relative intensity of the amount of light in the system due to the defocusing of a collector 3 can be done by the following formula
  • lighting systems are specified for the first time, which make it possible to variably adjust the light intensity in the lighting system and thus in the entire projection exposure system, without the uniformity of the field being influenced at the field level.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un système d'éclairage utilisé en microlithographie à longueurs d'ondes inférieures ou égales à 157 nm, en particulier en lithographie EUV, destiné à éclairer un plan d'objet, ledit système comprenant : une source de rayonnement qui présente des faisceaux lumineux, lesdits faisceaux lumineux traversant le système d'éclairage dans une trajectoire du faisceau allant de la source d'éclairage jusqu'au plan d'objet et présentant une intensité lumineuse ; un premier composant optique comprenant au moins un premier élément optique doté d'une pluralité d'éléments de grille, le premier élément optique étant disposé dans la trajectoire du faisceau, entre la source d'éclairage et le plan d'objet. Ledit système est caractérisé en ce qu'il comprend un dispositif permettant de régler l'intensité lumineuse pour des longueurs d'ondes inférieures ou égales à 157 nm, lequel est disposé dans la trajectoire du faisceau allant de la source de rayonnement jusqu'au plan d'objet, entre la source d'éclairage et le premier élément optique.
EP03807802A 2002-09-30 2003-08-23 Systeme d'eclairage comprenant un dispositif servant a regler l'intensite lumineuse Withdrawn EP1550004A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10245625 2002-09-30
DE10245625 2002-09-30
PCT/EP2003/009370 WO2004034146A2 (fr) 2002-09-30 2003-08-23 Systeme d'eclairage comprenant un dispositif servant a regler l'intensite lumineuse

Publications (1)

Publication Number Publication Date
EP1550004A2 true EP1550004A2 (fr) 2005-07-06

Family

ID=32086837

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03807802A Withdrawn EP1550004A2 (fr) 2002-09-30 2003-08-23 Systeme d'eclairage comprenant un dispositif servant a regler l'intensite lumineuse

Country Status (3)

Country Link
EP (1) EP1550004A2 (fr)
AU (1) AU2003258657A1 (fr)
WO (1) WO2004034146A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007025846A1 (de) * 2007-06-01 2008-12-11 Carl Zeiss Smt Ag Beleuchtungssystem mit wenigstens einem akustooptischen Spiegel
DE102007041004A1 (de) 2007-08-29 2009-03-05 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Mikrolithografie
DE102012218221A1 (de) * 2012-10-05 2014-04-10 Carl Zeiss Smt Gmbh Monitorsystem zum Bestimmen von Orientierungen von Spiegelelementen und EUV-Lithographiesystem

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3235078B2 (ja) * 1993-02-24 2001-12-04 株式会社ニコン 走査露光方法、露光制御装置、走査型露光装置、及びデバイス製造方法
JPH06302491A (ja) * 1993-04-15 1994-10-28 Nikon Corp 露光量制御装置
US6106139A (en) * 1997-10-30 2000-08-22 Nikon Corporation Illumination optical apparatus and semiconductor device manufacturing method
JP2000100685A (ja) * 1998-09-17 2000-04-07 Nikon Corp 露光装置及び該装置を用いた露光方法
SE517550C2 (sv) * 2000-04-17 2002-06-18 Micronic Laser Systems Ab Mönstergenereringssystem användande en spatialljusmodulator
US6794100B2 (en) * 2001-08-30 2004-09-21 Micron Technology, Inc. Method for controlling radiation beam intensity directed to microlithographic substrates
JP2003282412A (ja) * 2002-03-25 2003-10-03 Ushio Inc 光照射装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2004034146A3 *

Also Published As

Publication number Publication date
WO2004034146A2 (fr) 2004-04-22
WO2004034146A3 (fr) 2004-08-05
AU2003258657A8 (en) 2004-05-04
AU2003258657A1 (en) 2004-05-04

Similar Documents

Publication Publication Date Title
DE60312871T2 (de) Gitter basierter spektraler filter zur unterdrückung von strahlung ausserhalb des nutzbandes in einem extrem-ultraviolett lithographiesystem
DE60217771T2 (de) Belichtungssystem, Projektionsbelichtungsapparat und Verfahren zur Herstellung eines Artikels
EP1200879B1 (fr) Réglage de la distribution d'illumination dans la pupille de sortie d'un système d'illumination pour l'ultraviolet extrême
EP0955641B1 (fr) Système d'illumination, en particulier pour lithographie à rayons ultraviolets profonds
DE69132110T2 (de) Verfahren und vorrichtung zur belichtung
DE69415610T2 (de) Vorrichtung und Verfahren zur Projektionsbelichtung
EP1258780B1 (fr) Système optique de formation d'image avec moyens de polarisation
DE69222963T2 (de) Abbildungsverfahren zur Herstellung von Mikrovorrichtungen
DE60225216T2 (de) Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
EP1884831A2 (fr) Système d'eclairage pour une installation d'eclairage par projection dotée de longueurs d'ondes < 193 nm
DE4136698C2 (de) Verfahren zur Herstellung eines Frequenzfilters und Musterdefekt-Nachweiseinrichtung
DE3785636T2 (de) Beleuchtungsapparat für Belichtung.
DE10138284A1 (de) Beleuchtungssystem mit genesteten Kollektoren
DE4106423A1 (de) Optische bearbeitungsvorrichtung
EP1434240A1 (fr) Système d'illumination, en particulier pour lithographie à rayons ultraviolets profonds
DE10138313A1 (de) Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
EP2064597A1 (fr) Systeme d'eclairage avec un detecteur pour capter une intensite de lumiere
DE102011015266A1 (de) EUV-Kollektorsystem mit verbesserter EUV-Strahlungssammlung
DE102011113521A1 (de) Mikrolithographische Projektionsbelichtungsanlage
DE10317278A1 (de) Diffusor, Wellenfrontquelle, Wellenfrontsensor und Projektionsbelichtungsanlage
EP1180726A2 (fr) Système d' illumination pour la microlithographie
DE10127449A1 (de) Beleuchtungssystem mit einer Vielzahl von Einzelgittern
DE10208854A1 (de) Beleuchtungssystem mit genestetem Kollektor zur annularen Ausleuchtung einer Austrittspupille
DE102007023411A1 (de) Optisches Element, Beleuchtungsoptik für die Mikrolithographie mit mindestens einem derartigen optischen Element sowie Beleuchtungssystem mit einer derartigen Beleuchtungsoptik
DE102008040058A1 (de) Mikrolithographische Projektionsbelichtungsanlage

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20050503