EP1548877B1 - Multi-band antenna with planar radiating surfaces and portable phone comprising such an antenna - Google Patents

Multi-band antenna with planar radiating surfaces and portable phone comprising such an antenna Download PDF

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Publication number
EP1548877B1
EP1548877B1 EP04293084.2A EP04293084A EP1548877B1 EP 1548877 B1 EP1548877 B1 EP 1548877B1 EP 04293084 A EP04293084 A EP 04293084A EP 1548877 B1 EP1548877 B1 EP 1548877B1
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EP
European Patent Office
Prior art keywords
radiation
antenna according
switches
antenna
mhz
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Application number
EP04293084.2A
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German (de)
French (fr)
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EP1548877A1 (en
Inventor
Fernando Romao
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Apple Inc
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Apple Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04Resonant antennas
    • H01Q9/0407Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H01Q9/0421Substantially flat resonant element parallel to ground plane, e.g. patch antenna with a shorting wall or a shorting pin at one end of the element
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/12Supports; Mounting means
    • H01Q1/22Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/242Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q23/00Antennas with active circuits or circuit elements integrated within them or attached to them
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04Resonant antennas
    • H01Q9/0407Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H01Q9/0442Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular tuning means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04Resonant antennas
    • H01Q9/06Details
    • H01Q9/14Length of element or elements adjustable
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04Resonant antennas
    • H01Q9/06Details
    • H01Q9/14Length of element or elements adjustable
    • H01Q9/145Length of element or elements adjustable by varying the electrical length

Definitions

  • the present invention relates to an antenna of the type with radiating surface (s) plane (s).
  • the invention proposes in particular an antenna of this type capable of being used in transmission / reception over at least two frequency bands, and having improved performances compared to antennas of the state of the art.
  • planar antennas called PIFA ("Planar Inverted-F Antenna” or flat antenna type F inverted) which comprise, as illustrated by the figure 1 , a ground plane 1 and a flat conductive surface 2 which is superimposed on this ground plane 1, and extends to the right and parallel thereto.
  • PIFA Planar Inverted-F Antenna
  • Such an arrangement has a resonance wavelength which is a function of the dimensions of the plane conductive surface 2 and the height which separates it from its ground plane 1.
  • the planar conductive surface 2 comprises a current driving point A and a grounding plane G.
  • the resonance frequency is notably related to the greatest peripheral length L AG between the point A and the point G, the length L AG being referenced by 3 on the figure 1 .
  • the length h is also added to L AG twice to obtain a length making it possible to find the resonant frequency of the antenna.
  • These antennas have a particular advantage in terms of congestion and integration ability in mobile phones.
  • FIGS. 3A to 3C show that we know antennas for radiating on several frequencies.
  • the low resonant frequency is defined by the length denoted by L B and the high resonance frequency by the length denoted L H.
  • L B we define L B by the longest path on surface 2 to go from A to G, to which the distance h is added twice.
  • L H by an equivalent dimension of the slot to which we add twice the distance h.
  • the calculation of L H is known to those skilled in the art.
  • the figure 4 shows that we also know transmitting / receiving multiband antennas having at least one plane 2 radiation surface having two slots 30 separating radiation sections 21, 22 and 23.
  • the radiation sections 21, 22 and 23 are connected by means Z 1 and Z 2 defining adaptive passive circuits known to those skilled in the art which, on transmission as on reception, are resonant on simultaneously at least two frequency bands.
  • the means Z 1 and Z 2 define passive matching circuits and are generally connected in parallel with capacitive or inductive means themselves connected in series with means able to be switched selectively between a passing state and a starch. blocked.
  • the capacitive or inductive means offset the resonance bands of the antenna, depending on whether the means capable of being switched are in the on state or in the off state.
  • the means Z 1 and Z 2 comprise a plug circuit known to those skilled in the art which will be equivalent to an inductor for the low frequencies and a capacity for the high frequencies.
  • the antennas Figures 3A to 4 provide acceptable radiation performance, especially in far-field measurement, while locally producing a lower near field than whip antennas or helical antennas otherwise known.
  • the antennas of the state of the art of Figures 3A to 4 are designed in such a way that multiband performance is average in the different bands.
  • US Patent 4780724 discloses a switch control technique, however the switches are connected to the ground plane.
  • the invention proposes to overcome these disadvantages.
  • An object of the invention is to overcome at least one of the disadvantages of antennas of the prior art.
  • one of the aims of the invention is to propose an antenna for which multiband performance is very close to several single-band antennas.
  • Another object of the invention is to provide an antenna having a plurality of resonance bands and having a very large bandwidth with respect to the multiband antennas of the state of the art.
  • Another object of the invention is to provide an antenna having a plurality of resonance bands and having a very high yield compared to the multiband antennas of the state of the art.
  • One of the other aims of the invention is to propose an antenna comprising several resonance bands, at least one of which is in the GSM domain and at least one in the DCS 1800 domain, the antenna compensating for at least one of the disadvantages of the antennas. the prior art.
  • the invention provides an antenna according to claim 1.
  • control current of the switches arrives at the antenna by the point of attack.
  • the invention also relates to a telephone comprising an antenna according to the invention.
  • the transmitting / receiving antenna shown on the figure 5 comprises a ground plane 1 and a plane radiating surface 2 which extends superimposed on said ground plane 1, being parallel thereto.
  • An antenna according to the invention may also comprise more than one plane radiating surface.
  • the radiating surface 2 is connected on one side to the ground plane 1 (connection point G) and on the other side to an RF signal supply / reception electronics (connection point A).
  • the radiation surface 2 is divided into at least two radiation zones 51 and 52 separated by a junction 4 formed over most of its length with a slot.
  • the radiation surface 2 may of course have more than two radiation zones 51 and 52 and more than one junction 4.
  • the ends of the junction 4 located on the periphery 7 of the radiation surface 2 comprise means 60 forming mechanical links and forming electrical switches between the radiation zones 51 and 52.
  • the electrical switches 60 are able to resonate all or part of the radiation surface 2 by electrically connecting all or part of the radiation zones.
  • the figure 5 shows that at least the radiation zone 51 comprises at least one radiation slot 5.
  • the opening 6 of the slot 5 is located at the periphery 7 of the radiation surface 2.
  • the figure 5 thus shows that the opening 6 of the slot 5 comprises means 61 able to form a mechanical connection between the two sides of the slot 5 at the periphery 7 of the radiation surface 2.
  • the means 61 also form electrical switches between these two sides.
  • the means 61 are able to allow the flow of current on the periphery 7 of the radiation surface 2 in a closed electrical state, or to allow the flow of current on the inner periphery 8 of the slot 5 in an open electrical state.
  • the surface of the figure 5 is equivalent to a radiating surface 2 as represented on the Figure 6A . All radiation zones are electrically connected to each other.
  • the radiation surface 2 is able to radiate in accordance with the global system of mobile communications (GSM) and there is a flow of current as indicated by reference 3, namely a circulation on the inner periphery 8 of the slot 5.
  • GSM global system of mobile communications
  • the slot 5 is able to allow radiation of the radiation surface 2 at around 900 MHz, preferably in accordance with the global system of mobile communications (GSM), in particular from 824 MHz to 960 MHz.
  • GSM global system of mobile communications
  • Zone 52 is not electrically connected to zone 51, although it is still mechanically connected to it.
  • the radiation surface 2 is capable of radiating in the frequency band at around 1800 MHz, from preferably that of the DCS 1800 or “Digital Communication System (DCS) 1800 MHz", in particular from 1710 MHz to 1990 MHz.
  • DCS Digital Communication System
  • the multiband performance of the antennas according to the invention are very close to those of n single-band antennas.
  • -5 dB of reflection rate at the edge of the band is a suitable value. This corresponds to an antenna with a loss of 1.5 dB at the edge of the band relative to the center of the band.
  • the switch means is provided by active low loss and high insulative switches.
  • switches comprising a PIN diode, that is to say a semiconductor comprising an intrinsic region (formed of an intrinsic semiconductor) between two regions, one of which type P, the other type N.
  • the PIN diode preferably comprises in the on state a very low resistance, for example of the order 1 Ohm.
  • the PIN diode preferably comprises in the off state a very low capacitance, for example of the order 0.1 pF.
  • means 60 and 61 can use means comprising an active element of the field effect transistor type or an active diode, for example at least one BAR type diode 88.
  • such an active diode will have, for example, a through current of 25 mA for a resistance R on 0.5 Ohm and a voltage across its 0.8 volt.
  • Such an active diode will have a through current of 0 mA for a capacitance C off of 0.22 pF for a voltage at its terminals greater than 10 volts.
  • Two BAR diodes 88 are then available to provide sufficient isolation.
  • the voltage across the active diode is preferably greater than 20 volts.
  • the figure 7 schematically shows a possible device for controlling the active diode.
  • a control terminal 79 is provided for controlling, through a resistor 80, means 78 forming a transistor.
  • the means 78 are also connected firstly to a control voltage of 3 or 5 volts on a terminal 83 and secondly to a voltage of -20 volts, for example on a terminal 81, for example through the resistors 77. and 76.
  • This -20 Volt voltage prevents the formation of harmonics and allows the blocking of the diode.
  • a branch having a shock inductor 74 is connected by the terminal 82 located between the resistors 77 and 76.
  • Said branch connects the means 78 to an RF radio frequency power source, connected to the control device at point 73.
  • the inductor 74 has a very high impedance for radio frequencies.
  • the radio frequency current source is connected to the antenna from the terminal 73 via the two diodes 71 and 72, passing in this direction.
  • a decoupling capacitor 75 having a very low impedance for the radio frequencies, is arranged between the ground and the terminal 82.
  • the figure 8 schematically represents another possible embodiment of a radiation surface.
  • the surface comprises three radiation zones 51, 52 and 53.
  • the zones 51 and 53 are separated from each other by the junction 41 which comprises a slot having at its ends the means E 1 and E 2 .
  • the means E 1 are located on the periphery 7 of the surface, while the means E 2 are located in the middle of the radiation surface 2.
  • the grounding point G is located on the zone 51, while the point of attack A is located on the zone 53.
  • a control circuit 90 described in more detail on the figure 9 , is connected to the point of attack.
  • junction 41 and the means E 1 and E 2 makes it possible to force the passage of the direct current from the point A towards the point G through the periphery 7 of the radiating surface.
  • the means E 1 and E 2 comprise decoupling capabilities GSM and DCS.
  • Capacities are typically of the order of 22 pF in size 0402.
  • This control device therefore defines two different paths for the direct current and for the radiofrequency current.
  • the means E 1 and E 2 are indeed transparent for radio frequency currents.
  • the zones 51 and 53 on the one hand are separated from the zone 52 on the other hand by the junction 42 which comprises a slot having at its ends, on the periphery 7 of the surface 2, the means S 1 and S 2 .
  • junctions 41 and 42 are located substantially perpendicular to each other.
  • Two BAR type diodes 88 are preferentially placed at S 1 and two diodes at S 2 , in order to obtain the appropriate isolation value.
  • the passing directions of the diodes are placed so that a current can flow from A to G on the periphery 7 of the surface 2.
  • a slot 5 made in the zone 52 makes it possible to give the surface 2 the GSM resonance.
  • the control system 90 is shown schematically at the figure 9 .
  • the means 78 are also connected to a voltage of -20 volts for example on a terminal 81, for example through the resistor 76. This voltage of -20 volts prevents the formation of harmonics.
  • a branch having a shock inductance 74 is connected by the terminal 82 situated between the means 78 and the resistor 76.
  • Said branch connects the means 78 to an RF radio frequency power source, connected to the control device at point 73.
  • the inductor 74 has a very high impedance for radio frequencies.
  • the radio frequency current source is connected to the antenna from the terminal 73 via at least one diode 71, passing in this direction.
  • a decoupling capacitor 75 having a very low impedance for the radio frequencies, is arranged between the ground and the terminal 82.
  • the GSM mode is engaged when the means 78 are in a closed state
  • the DCS mode is engaged when the means 78 are in an open state.
  • the means forming switches may also comprise microelectromechanical systems of a MEMS technology or "microelectronic mechanical system" according to the English terminology generally used by those skilled in the art.

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Waveguide Aerials (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)

Description

La présente invention est relative à une antenne du type à surface(s) rayonnante(s) plane(s).The present invention relates to an antenna of the type with radiating surface (s) plane (s).

L'invention propose notamment une antenne de ce type apte à être utilisée en émission/réception sur au moins deux bandes de fréquences, et ayant des performances améliorées par rapport aux antennes de l'état de la technique.The invention proposes in particular an antenna of this type capable of being used in transmission / reception over at least two frequency bands, and having improved performances compared to antennas of the state of the art.

Elle propose également une structure de téléphone portable comportant une telle antenne.It also offers a mobile phone structure comprising such an antenna.

ETAT DE L'ARTSTATE OF THE ART

Il a déjà été proposé d'utiliser pour les téléphones portables des antennes planes appelées PIFA (« Planar Inverted-F Antenna » ou antenne plane de type F inversée) qui comportent, ainsi que l'illustre la figure 1, un plan de masse 1 et une surface conductrice plane 2 qui est superposée à ce plan de masse 1, et s'étend au droit et parallèlement à celui-ci.It has already been proposed to use for mobile phones planar antennas called PIFA ("Planar Inverted-F Antenna" or flat antenna type F inverted) which comprise, as illustrated by the figure 1 , a ground plane 1 and a flat conductive surface 2 which is superimposed on this ground plane 1, and extends to the right and parallel thereto.

Un tel montage a une longueur d'onde de résonance qui est fonction des dimensions de la surface conductrice plane 2 et de la hauteur qui la sépare de son plan de masse 1.Such an arrangement has a resonance wavelength which is a function of the dimensions of the plane conductive surface 2 and the height which separates it from its ground plane 1.

Ainsi, la surface conductrice plane 2 comporte un point d'attaque de courant A et un plan de mise à la masse G. La fréquence de résonance est notamment liée à la plus grande longueur périphérique LAG entre le point A et le point G, la longueur LAG étant référencée par 3 sur la figure 1. On ajoute également à LAG deux fois la longueur h pour obtenir une longueur permettant de trouver la fréquence de résonance de l'antenne.Thus, the planar conductive surface 2 comprises a current driving point A and a grounding plane G. The resonance frequency is notably related to the greatest peripheral length L AG between the point A and the point G, the length L AG being referenced by 3 on the figure 1 . The length h is also added to L AG twice to obtain a length making it possible to find the resonant frequency of the antenna.

La fréquence de résonance peut être approximée par : f = c 2 L AG + 2 h

Figure imgb0001
où c est la vitesse de la lumière.The resonant frequency can be approximated by: f = vs 2 The AG + 2 h
Figure imgb0001
where is the speed of light.

Ces antennes présentent notamment un avantage important en terme d'encombrement et d'aptitude à l'intégration dans les téléphones mobiles.These antennas have a particular advantage in terms of congestion and integration ability in mobile phones.

Toutefois, une limitation de ces antennes tient en ce que leur largeur de bande passante est d'autant plus restreinte que la hauteur h qui sépare leur surface rayonnante 2 de leur plan de masse 1 est petite, ou d'une façon générale que le volume de l'antenne est faible.However, a limitation of these antennas is that their bandwidth is all the more restricted as the height h which separates their radiating surface 2 from their ground plane 1 is small, or in a general way that the volume the antenna is weak.

Ceci empêche en effet de disposer d'un gain optimal sur l'ensemble des canaux utilisés sur une même bande passante.This prevents in fact having an optimal gain on all the channels used on the same bandwidth.

Notamment, on connaît déjà des téléphones portables qui utilisent des antennes du type précité qui comportent deux surfaces rayonnantes qui sont de dimensions différentes et qui sont disposées dans un même plan, au dessus d'un même plan de masse.In particular, we already know mobile phones that use antennas of the aforementioned type which comprise two radiating surfaces which are of different dimensions and which are arranged in the same plane, above the same ground plane.

Ces deux surfaces rayonnantes permettent, ainsi que l'illustre le graphe de la figure 2, de disposer pour l'antenne de deux bandes de fréquences, l'une autour de 900 MHz, l'autre autour de 1, 8 GHz.These two radiating surfaces allow, as illustrated by the graph of the figure 2 , to have for the antenna two frequency bands, one around 900 MHz, the other around 1, 8 GHz.

Toutefois, l'utilisation d'une séparation "duplex" à l'émission/réception, comme c'est habituellement le cas dans les systèmes conformes au système mondial de communications mobiles ou « global system for mobile communications (GSM) » selon la terminologie anglo-saxonne généralement utilisée par l'homme du métier, conduit à utiliser pour les fréquences d'émission et de réception fTX, fRX les bords des bandes de résonances de l'antenne, où les adaptations sont peu satisfaisantes.However, the use of "duplex" separation on transmission / reception, as is usually the case in systems conforming to the global system of mobile communications or "global system for mobile communications (GSM)" according to the terminology Anglo-Saxon generally used by those skilled in the art, led to use for the transmitting and receiving frequencies f TX , RX the edges of the resonant bands of the antenna, where the adaptations are unsatisfactory.

Les figures 3A à 3C montrent que l'on connaît des antennes permettant de rayonner sur plusieurs fréquences.The FIGS. 3A to 3C show that we know antennas for radiating on several frequencies.

Sur ces figures, on représente schématiquement des vues de dessus des surfaces planes 2 de telles antennes.These figures schematically show top views of the flat surfaces 2 of such antennas.

Pour toutes les antennes comportant des surfaces planes rayonnantes conformes aux figures 3A à 3C, la fréquence de résonance basse est définie par la longueur notée LB et la fréquence de résonance haute par la longueur notée LH.For all antennas with flat radiating surfaces conforming to FIGS. 3A to 3C , the low resonant frequency is defined by the length denoted by L B and the high resonance frequency by the length denoted L H.

On définit LB par le chemin le plus long sur la surface 2 pour aller de A à G, auquel on ajoute deux fois la distance h.We define L B by the longest path on surface 2 to go from A to G, to which the distance h is added twice.

On définit LH par une dimension équivalente de la fente à laquelle on ajoute deux fois la distance h. Le calcul de LH est connu de l'homme du métier.We define L H by an equivalent dimension of the slot to which we add twice the distance h. The calculation of L H is known to those skilled in the art.

La figure 4 montre qu'on connaît également des antennes multibandes d'émission/réception comportant au moins une surface plane 2 de rayonnement comportant deux fentes 30 séparant des sections de rayonnement 21, 22 et 23.The figure 4 shows that we also know transmitting / receiving multiband antennas having at least one plane 2 radiation surface having two slots 30 separating radiation sections 21, 22 and 23.

Les sections de rayonnement 21, 22 et 23 sont reliées par des moyens Z1 et Z2 définissant des circuits passifs d'adaptation connus de l'homme de l'art qui, à l'émission comme à la réception, sont résonants sur simultanément au moins deux bandes de fréquences.The radiation sections 21, 22 and 23 are connected by means Z 1 and Z 2 defining adaptive passive circuits known to those skilled in the art which, on transmission as on reception, are resonant on simultaneously at least two frequency bands.

Notamment, les moyens Z1 et Z2 définissent des circuits d'adaptation passifs et sont en général montés en parallèle avec des moyens capacitifs ou inductifs eux-mêmes montés en série avec des moyens aptes à être commutés sélectivement entre un état passant et un étaf bloqué.In particular, the means Z 1 and Z 2 define passive matching circuits and are generally connected in parallel with capacitive or inductive means themselves connected in series with means able to be switched selectively between a passing state and a starch. blocked.

Les moyens capacitifs ou inductifs décalent les bandes de résonance de l'antenne, selon que les moyens aptes à être commutés sont à l'état passant ou à l'état bloqué. En général, les moyens Z1 et Z2 comportent un circuit bouchon connu de l'homme du métier qui sera équivalent à une inductance pour les basses fréquences et une capacité pour les hautes fréquences.The capacitive or inductive means offset the resonance bands of the antenna, depending on whether the means capable of being switched are in the on state or in the off state. In general, the means Z 1 and Z 2 comprise a plug circuit known to those skilled in the art which will be equivalent to an inductor for the low frequencies and a capacity for the high frequencies.

Les antennes des figures 3A à 4 offrent des performances de rayonnement acceptables, notamment en mesure en champ lointain, tout en produisant localement un champ proche plus faible que les antennes fouet ou antennes hélicoïdales connues par ailleurs.The antennas Figures 3A to 4 provide acceptable radiation performance, especially in far-field measurement, while locally producing a lower near field than whip antennas or helical antennas otherwise known.

Par exemple, on peut obtenir simultanément avec une antenne comportant une plaque 2 selon la figure 4 des performances regroupées dans la tableau 1, par exemple pour un domaine correspondant au GSM et pour un domaine correspondant au système DCS 1800 ou « Digital Communication System (DCS) 1800 MHz ». Tableau 1. GSM DCS Bande passante à -5 dB 80 MHZ 190 MHz Rendement -3 dB/iso -3 dB/iso For example, it is possible to obtain simultaneously with an antenna comprising a plate 2 according to the figure 4 performance grouped in Table 1, for example for a domain corresponding to the GSM and for a domain corresponding to the DCS 1800 system or "Digital Communication System (DCS) 1800 MHz". Table 1. GSM DCS Bandwidth at -5 dB 80 MHZ 190 MHz yield -3 dB / iso -3 dB / iso

Ainsi, les antennes de l'état de la technique des figures 3A à 4 sont conçues de telle façon que les performances en multibande sont moyennes dans les différentes bandes.Thus, the antennas of the state of the art of Figures 3A to 4 are designed in such a way that multiband performance is average in the different bands.

En effet, réaliser une antenne monobande conduit à de très bons résultats. Cependant, ces résultats se dégradent, notamment en ce qui concerne le rendement de l'antenne ou la bande passante, dès l'instant où l'on veut créer plusieurs bandes de résonance.Indeed, to realize a single-band antenna leads to very good results. However, these results deteriorate, especially as regards the antenna efficiency or the bandwidth, from the moment when we want to create several resonance bands.

Le document WO 01/20718 divulgue une antenne selon le préambule de la revendication 1.The document WO 01/20718 discloses an antenna according to the preamble of claim 1.

Il ne divulgue pas une antenne comportant une commande unique, notamment pour les commutateurs.It does not disclose an antenna with a single command, especially for switches.

US-A-4780724 divulgue une technique de commande de commutateurs, les commutateurs étant cependant reliés au plan de masse. US Patent 4780724 discloses a switch control technique, however the switches are connected to the ground plane.

PRESENTATION DE L'INVENTIONPRESENTATION OF THE INVENTION

L'invention propose de pallier ces inconvénients.The invention proposes to overcome these disadvantages.

Un but de l'invention est de pallier au moins un des inconvénients des antennes de l'art antérieur.An object of the invention is to overcome at least one of the disadvantages of antennas of the prior art.

Notamment, un des buts de l'invention est de proposer une antenne pour laquelle les performances en multibande sont très proches de plusieurs antennes monobandes.In particular, one of the aims of the invention is to propose an antenna for which multiband performance is very close to several single-band antennas.

Un des autres buts de l'invention est de proposer une antenne comportant plusieurs bandes de résonance et ayant bande passante très importante par rapport aux antennes multibandes de l'état de la technique.Another object of the invention is to provide an antenna having a plurality of resonance bands and having a very large bandwidth with respect to the multiband antennas of the state of the art.

Un des autres buts de l'invention est de proposer une antenne comportant plusieurs bandes de résonance et ayant un rendement très important par rapport aux antennes multibandes de l'état de la technique.Another object of the invention is to provide an antenna having a plurality of resonance bands and having a very high yield compared to the multiband antennas of the state of the art.

Un des autres buts de l'invention est de proposer une antenne comportant plusieurs bandes de résonance, dont au moins une dans le domaine GSM et au moins une dans le domaine du DCS 1800, l'antenne palliant au moins un des inconvénients des antennes de l'art antérieur.One of the other aims of the invention is to propose an antenna comprising several resonance bands, at least one of which is in the GSM domain and at least one in the DCS 1800 domain, the antenna compensating for at least one of the disadvantages of the antennas. the prior art.

A cet effet, l'invention propose une antenne selon la revendication 1.For this purpose, the invention provides an antenna according to claim 1.

Dans tous les modes de réalisation de l'invention, le courant de commande des commutateurs arrive à l'antenne par le point d'attaque.In all embodiments of the invention, the control current of the switches arrives at the antenna by the point of attack.

Des modes de réalisation préférentiels sont proposés dans les revendications secondaires.Preferred embodiments are provided in the subclaims.

L'invention est avantageusement complétée par les caractéristiques suivantes, prises seules ou en une quelconque de leur combinaison techniquement possible :

  • au moins une zone de rayonnement comporte au moins une fente de rayonnement ;
  • la fente est apte à permettre le rayonnement de la surface de rayonnement dans une première bande de fréquences lorsque toutes les zones de rayonnement sont reliées entre elles ;
  • ladite première bande est la bande de fréquences aux alentours de 900 MHz, de préférence celle du système mondial de communications mobiles (GSM), notamment de 824 MHz à 960 MHz ;
  • l'ouverture d'au moins une fente, l'ouverture étant située au niveau de la périphérie de la surface de rayonnement, comporte des moyens formant commutateurs aptes à permettre la circulation de courant sur la périphérie de la surface de rayonnement dans un état fermé ou à permettre la circulation de courant sur la périphérie interne de la fente dans un état ouvert ;
  • la surface de rayonnement est apte à rayonner dans une deuxième bande de fréquences lorsque certains des commutateurs situés aux jonctions des zones de rayonnement sont dans un état ouvert ;
  • ladite deuxième bande est la bande de fréquences aux alentours de 1800 MHz, de préférence celle du système DCS 1800 ou « Digital Communication System (DCS) 1800 MHz », notamment de 1710 MHz à 1990 MHz;
  • les moyens formant commutateurs sont des commutateurs actifs à faible perte et à grand pouvoir isolant ;
  • les commutateurs comportent une diode PIN ;
  • les commutateurs comportent un élément actif de type transistor à effet de champ;
  • dans un exemple de réalisation avec des diodes PIN ou un élément actif de type transistor à effet de champ, une zone de rayonnement comporte un point d'attaque, et une autre zone comporte un point de mise à la masse, les deux zones étant séparées par une jonction comportant des moyens de découplage aptes à forcer le passage du courant continu du point d'attaque vers le point de mise à la masse en passant par la périphérie de la surface de rayonnement.
  • les moyens formant commutateurs sont des microsystèmes électromécaniques.
The invention is advantageously completed by the following features, taken alone or in any of their technically possible combination:
  • at least one radiation zone has at least one radiation slot;
  • the slot is adapted to allow radiation of the radiation surface in a first frequency band when all the radiation zones are connected together;
  • said first band is the frequency band around 900 MHz, preferably that of the global system of mobile communications (GSM), in particular from 824 MHz to 960 MHz;
  • the opening of at least one slot, the opening being located at the periphery of the radiation surface, comprises switch means capable of allowing current flow on the periphery of the radiation surface in a closed state or allowing current flow on the inner periphery of the slot in an open state;
  • the radiation surface is capable of radiating in a second frequency band when some of the switches located at the junctions of the radiation zones are in an open state;
  • said second band is the frequency band around 1800 MHz, preferably that of the DCS 1800 system or "Digital Communication System (DCS) 1800 MHz", in particular from 1710 MHz to 1990 MHz;
  • the switch means are active switches with low loss and high insulative power;
  • the switches have a PIN diode;
  • the switches comprise an active element of the field effect transistor type;
  • in an exemplary embodiment with PIN diodes or a field effect transistor active element, a radiation zone has a point of attack, and another zone has a grounding point, the two zones being separated by a junction comprising decoupling means capable of forcing the passage of direct current from the point of attack to the point of grounding through the periphery of the radiating surface.
  • the switch means are electromechanical microsystems.

L'invention concerne également un téléphone comportant une antenne selon l'invention.The invention also relates to a telephone comprising an antenna according to the invention.

Cela a pour avantage d'avoir un point de commande unique. Une telle commande est plus simple et plus économique que les commandes de l'art antérieur.This has the advantage of having a single point of order. Such a control is simpler and more economical than the controls of the prior art.

PRESENTATION DES FIGURESPRESENTATION OF FIGURES

D'autres caractéristiques, buts et avantages de l'invention ressortiront de la description qui suit, qui est purement illustrative et non limitative, et qui doit être lue en regard des dessins annexés sur lesquels :

  • la figure 1, déjà discutée, représente schématiquement une antenne de type PIFA conforme à un état de la technique connu ;
  • la figure 2, également déjà discutée, est un graphe adaptation/fréquence illustrant la répartition des fréquences d'émission/réception par rapport aux bandes de fréquences d'une antenne de type PIFA double bande conforme à un état de la technique connu ;
  • les figures 3A à 3C sont des représentations schématiques en vue de dessus de surfaces rayonnantes d'antennes conformes à un état de la technique connu ;
  • la figure 4 est une représentation schématique en vue de dessus d'une surface rayonnante d'une autre antenne conforme à un état de la technique connu ;
  • la figure 5 est une représentation schématique en vue de dessus d'une surface rayonnante d'une autre antenne conforme à l'invention ;
  • les figures 6A et 6B représente schématiquement les équivalences de la surface de la figure 5 selon deux états ;
  • la figure 7 montre schématiquement un dispositif possible de contrôle de la diode active ;
  • la figure 8 représente schématiquement un autre mode de réalisation possible d'une surface de rayonnement ; et
  • la figure 9 montre schématiquement un autre dispositif possible de contrôle de la diode active.
Other features, objects and advantages of the invention will emerge from the description which follows, which is purely illustrative and nonlimiting, and which should be read with reference to the appended drawings in which:
  • the figure 1 , already discussed, schematically shows a PIFA type antenna according to a known state of the art;
  • the figure 2 , also already discussed, is an adaptation / frequency graph illustrating the distribution of the transmit / receive frequencies with respect to the frequency bands of a dual band PIFA type antenna according to a known state of the art;
  • the FIGS. 3A to 3C are schematic representations in top view of radiating surfaces of antennas according to a state of the prior art;
  • the figure 4 is a schematic representation in plan view of a radiating surface of another antenna according to a known state of the art;
  • the figure 5 is a schematic representation in plan view of a radiating surface of another antenna according to the invention;
  • the Figures 6A and 6B schematically represents the equivalences of the surface of the figure 5 in two states;
  • the figure 7 schematically shows a possible device for controlling the active diode;
  • the figure 8 schematically represents another possible embodiment of a radiation surface; and
  • the figure 9 schematically shows another possible device for controlling the active diode.

Sur l'ensemble des figures, les éléments ayant des fonctions similaires portent des références numériques identiques.In all of the figures, the elements having similar functions have identical reference numerals.

DESCRIPTION DETAILLEEDETAILED DESCRIPTION

L'antenne d'émission/réception représentée sur la figure 5 comporte un plan de masse 1 et une surface rayonnante plane 2 qui s'étend de façon superposée audit plan de masse 1, en étant parallèle à celui-ci.The transmitting / receiving antenna shown on the figure 5 comprises a ground plane 1 and a plane radiating surface 2 which extends superimposed on said ground plane 1, being parallel thereto.

Une antenne selon l'invention peut également comporter plus d'une surface rayonnante plane.An antenna according to the invention may also comprise more than one plane radiating surface.

A une de ses extrémités, la surface rayonnante 2 est reliée d'un côté au plan de masse 1 (point de liaison G) et de l'autre à une électronique d'alimentation/réception des signaux RF (point de liaison A).At one of its ends, the radiating surface 2 is connected on one side to the ground plane 1 (connection point G) and on the other side to an RF signal supply / reception electronics (connection point A).

Comme le montre la figure 5, la surface de rayonnement 2 est divisée en au moins deux zones 51 et 52 de rayonnement séparées par une jonction 4 formée sur la plupart de sa longueur d'une fente.As shown in figure 5 , the radiation surface 2 is divided into at least two radiation zones 51 and 52 separated by a junction 4 formed over most of its length with a slot.

La surface de rayonnement 2 peut bien entendu comporter plus de deux zones de rayonnement 51 et 52 et plus d'une jonction 4.The radiation surface 2 may of course have more than two radiation zones 51 and 52 and more than one junction 4.

Les extrémités de la jonction 4 situées sur la périphérie 7 de la surface de rayonnement 2 comportent des moyens 60 formant liaisons mécaniques et formant commutateurs électriques entre les zones de rayonnement 51 et 52.The ends of the junction 4 located on the periphery 7 of the radiation surface 2 comprise means 60 forming mechanical links and forming electrical switches between the radiation zones 51 and 52.

Les commutateurs électrique 60 sont aptes à mettre en résonance toute ou partie de la surface 2 de rayonnement en reliant électriquement toutes ou partie des zones de rayonnement.The electrical switches 60 are able to resonate all or part of the radiation surface 2 by electrically connecting all or part of the radiation zones.

La figure 5 montre qu'au moins la zone 51 de rayonnement comporte au moins une fente 5 de rayonnement. L'ouverture 6 de la fente 5 est située au niveau de la périphérie 7 de la surface 2 de rayonnement.The figure 5 shows that at least the radiation zone 51 comprises at least one radiation slot 5. The opening 6 of the slot 5 is located at the periphery 7 of the radiation surface 2.

La figure 5 montre ainsi que l'ouverture 6 de la fente 5 comporte des moyens 61 aptes à former une liaison mécanique entre les deux côtés de la fente 5 au niveau de la périphérie 7 de la surface 2 de rayonnement.The figure 5 thus shows that the opening 6 of the slot 5 comprises means 61 able to form a mechanical connection between the two sides of the slot 5 at the periphery 7 of the radiation surface 2.

Les moyens 61 forment également commutateurs électriques entre ces deux côtés.The means 61 also form electrical switches between these two sides.

Ainsi, les moyens 61 sont aptes à permettre la circulation de courant sur la périphérie 7 de la surface 2 de rayonnement dans un état électrique fermé, ou à permettre la circulation de courant sur la périphérie interne 8 de la fente 5 dans un état électrique ouvert.Thus, the means 61 are able to allow the flow of current on the periphery 7 of the radiation surface 2 in a closed electrical state, or to allow the flow of current on the inner periphery 8 of the slot 5 in an open electrical state. .

Ainsi, lorsque les commutateurs 60 sont dans un état électrique fermé et lorsque le commutateur 61 est dans un état électrique ouvert, la surface de la figure 5 est équivalente à une surface rayonnante 2 telle que représentée sur la figure 6A. Toutes les zones de rayonnement sont électriquement reliées entre elles.Thus, when the switches 60 are in a closed electrical state and when the switch 61 is in an open electrical state, the surface of the figure 5 is equivalent to a radiating surface 2 as represented on the Figure 6A . All radiation zones are electrically connected to each other.

Dans cette configuration, la surface 2 de rayonnement est apte à rayonner conformément au système mondial de communications mobiles (GSM) et l'on a une circulation du courant comme indiqué par la référence 3, à savoir une circulation sur la périphérie interne 8 de la fente 5.In this configuration, the radiation surface 2 is able to radiate in accordance with the global system of mobile communications (GSM) and there is a flow of current as indicated by reference 3, namely a circulation on the inner periphery 8 of the slot 5.

Ainsi, la fente 5 est apte à permettre le rayonnement de la surface 2 de rayonnement aux alentours de 900 MHz, de préférence conformément au système mondial de communications mobiles (GSM), notamment de 824 MHz à 960 MHz.Thus, the slot 5 is able to allow radiation of the radiation surface 2 at around 900 MHz, preferably in accordance with the global system of mobile communications (GSM), in particular from 824 MHz to 960 MHz.

Lorsque les commutateurs 60 sont dans un état électrique ouvert et lorsque le commutateur 61 est dans un état électrique fermé, la surface de la figure 5 est équivalente à une surface rayonnante 2 telle que représentée sur la figure 6B. La zone 52 n'est pas électriquement reliée à la zone 51, bien qu'elle lui soit toujours reliée mécaniquement.When the switches 60 are in an open electrical state and when the switch 61 is in a closed electrical state, the surface of the figure 5 is equivalent to a radiating surface 2 as represented on the Figure 6B . Zone 52 is not electrically connected to zone 51, although it is still mechanically connected to it.

Dans cette configuration, la surface 2 de rayonnement est apte à rayonner dans la bande de fréquences aux alentours de 1800 MHz, de préférence celle du système DCS 1800 ou « Digital Communication System (DCS) 1800 MHz », notamment de 1710 MHz à 1990 MHz.In this configuration, the radiation surface 2 is capable of radiating in the frequency band at around 1800 MHz, from preferably that of the DCS 1800 or "Digital Communication System (DCS) 1800 MHz", in particular from 1710 MHz to 1990 MHz.

Avec une surface 2 de rayonnement équivalente à celle de la figure 6A et ayant des dimensions telles que la dimension 80 du grand côté de la surface 2 est sensiblement égale à 39 mm, et la dimension 81 du petit côté est sensiblement égale à 18 mm d'une part, et d'autre part avec une surface 2 de rayonnement équivalente à celle de la figure 6B et ayant des dimensions telles que la dimension 82 du grand côté est sensiblement égale à 21 mm (la dimension 81 du petit côté étant toujours sensiblement égale à 18 mm), on obtient les performances reprises dans le tableau 2. On précise que la distance h au plan de masse est égale à 9 mm environ. Tableau 2. GSM DCS Bande passante à -5 dB 150 MHZ 300 MHz Rendement -2 dB/iso -2 dB/iso With a radiation area 2 equivalent to that of the Figure 6A and having dimensions such that the dimension 80 of the long side of the surface 2 is substantially equal to 39 mm, and the dimension 81 of the short side is substantially equal to 18 mm on the one hand, and on the other hand with a surface 2 radiation equivalent to that of the Figure 6B and having dimensions such that the dimension 82 of the long side is substantially equal to 21 mm (the dimension 81 of the short side still being substantially equal to 18 mm), the performances given in Table 2 are obtained. to the ground plane is equal to about 9 mm. Table 2. GSM DCS Bandwidth at -5 dB 150 MHZ 300 MHz yield -2 dB / iso -2 dB / iso

On voit donc que la bande passante est très fortement augmentée par rapport aux antennes de l'état de la technique.We therefore see that the bandwidth is very greatly increased compared to the antennas of the state of the art.

Les performances multibande des antennes selon l'invention sont très proches de celles de n antennes monobandes.The multiband performance of the antennas according to the invention are very close to those of n single-band antennas.

En effet, on considère que -5 dB de taux de réflexion en bord de bande est une valeur convenable. Cela correspond en effet à une antenne présentant une perte de 1.5 dB en bord de bande par rapport au centre de bande.Indeed, it is considered that -5 dB of reflection rate at the edge of the band is a suitable value. This corresponds to an antenna with a loss of 1.5 dB at the edge of the band relative to the center of the band.

On comprend que les développements qui précèdent s'appliquent avantageusement à deux zones de résonance, une dans le domaine GSM et une autre dans le domaine DCS.It will be understood that the foregoing developments advantageously apply to two resonance zones, one in the GSM domain and another in the DCS domain.

On comprend également que d'autres bandes peuvent être prévues, en plaçant d'autres zones de résonance sur la surface de rayonnement et en les reliant ou non électriquement en fonction de la fréquence de résonance que l'on souhaite obtenir. Les zones de résonance reliées par un commutateur à l'état ouvert interviennent dans le fonctionnement de l'antenne, du fait de leur proximité, mais au second ordre seulement. La fréquence de résonance est principalement définie par la partie reliée aux points A et G.It is also understood that other bands may be provided, by placing other resonance zones on the radiating surface and by electrically or electrically connecting them depending on the resonance frequency that is desired. The resonance zones connected by a switch to the open state intervene in the operation of the antenna, because of their proximity, but only in the second order. The resonance frequency is mainly defined by the part connected to points A and G.

Pour obtenir les moyens 60 et 61, il ne suffit pas de réaliser des circuits passifs permettant de modéliser un circuit fermé ou un circuit ouvert en fonction de la fréquence, comme c'est le cas dans les antennes de l'état de la technique. Les performances en terme de rendement et en terme de bande passante sont en effet très mauvaises, cela étant dû à la trop grande sélectivité des éléments passifs.To obtain the means 60 and 61, it is not enough to make passive circuits for modeling a closed circuit or an open circuit according to the frequency, as is the case in antennas of the state of the art. Performance in terms of efficiency and in terms of bandwidth are indeed very bad, this being due to the excessive selectivity of the passive elements.

Par conséquent, on réalise les moyens formant commutateurs grâce à des commutateurs actifs à faible perte et à grand pouvoir isolant.Therefore, the switch means is provided by active low loss and high insulative switches.

Plusieurs modes de réalisation sont possibles.Several embodiments are possible.

Par exemple, on peut utiliser pour les moyens 60 et 61 des commutateurs comportant une diode PIN, c'est à dire un semi-conducteur comprenant une région intrinsèque (formée d'un semi-conducteur intrinsèque) comprise entre deux régions, l'une de type P, l'autre de type N.For example, it is possible to use, for the means 60 and 61, switches comprising a PIN diode, that is to say a semiconductor comprising an intrinsic region (formed of an intrinsic semiconductor) between two regions, one of which type P, the other type N.

La diode PIN comporte préférentiellement à l'état passant une résistance très faible, par exemple de l'ordre 1 Ohm.The PIN diode preferably comprises in the on state a very low resistance, for example of the order 1 Ohm.

La diode PIN comporte préférentiellement à l'état bloqué une capacité très faible, par exemple de l'ordre 0.1 pF.The PIN diode preferably comprises in the off state a very low capacitance, for example of the order 0.1 pF.

On peut également utiliser pour les moyens 60 et 61 des moyens comportant un élément actif de type transistor à effet de champ ou une diode active, par exemple au moins une diode du type BAR 88.It is also possible for the means 60 and 61 to use means comprising an active element of the field effect transistor type or an active diode, for example at least one BAR type diode 88.

A l'état passant, une telle diode active aura, par exemple, une intensité traversante de 25 mA pour une résistance Ron de 0.5 Ohm et une tension à ses bornes de 0.8 Volt.In the on state, such an active diode will have, for example, a through current of 25 mA for a resistance R on 0.5 Ohm and a voltage across its 0.8 volt.

A l'état bloqué, une telle diode active aura une intensité traversante de 0 mA pour une capacité Coff de 0.22 pF pour une tension à ses bornes supérieure à 10 Volt. On dispose alors deux diodes BAR 88 pour avoir un isolement suffisant.In the off state, such an active diode will have a through current of 0 mA for a capacitance C off of 0.22 pF for a voltage at its terminals greater than 10 volts. Two BAR diodes 88 are then available to provide sufficient isolation.

Pour éviter la formation d'harmoniques et garder leur intensité inférieure à -36 dBm, la tension aux bornes de la diode active est préférentiellement supérieure à 20 Volt.To avoid the formation of harmonics and keep their intensity lower than -36 dBm, the voltage across the active diode is preferably greater than 20 volts.

La figure 7 montre schématiquement un dispositif possible de contrôle de la diode active.The figure 7 schematically shows a possible device for controlling the active diode.

Une borne de contrôle 79 est prévue pour contrôler, à travers une résistance 80, des moyens 78 formant transistor.A control terminal 79 is provided for controlling, through a resistor 80, means 78 forming a transistor.

Les moyens 78 sont également reliés d'une part à une tension de commande de 3 ou 5 Volt sur une borne 83 et d'autre part à une tension de -20 Volt par exemple sur une borne 81, par exemple au travers des résistances 77 et 76. Cette tension de -20 Volt empêche la formation d'harmoniques et permet le blocage de la diode.The means 78 are also connected firstly to a control voltage of 3 or 5 volts on a terminal 83 and secondly to a voltage of -20 volts, for example on a terminal 81, for example through the resistors 77. and 76. This -20 Volt voltage prevents the formation of harmonics and allows the blocking of the diode.

On connecte une branche comportant une inductance de choc 74 par la borne 82 située entre les résistances 77 et 76.A branch having a shock inductor 74 is connected by the terminal 82 located between the resistors 77 and 76.

Ladite branche relie les moyens 78 à une source de courant de radiofréquences RF, connectée au dispositif de contrôle au point 73. L'inductance 74 à une impédance très élevée pour les radiofréquences.Said branch connects the means 78 to an RF radio frequency power source, connected to the control device at point 73. The inductor 74 has a very high impedance for radio frequencies.

La source de courant de radiofréquences est reliée à l'antenne à partir de la borne 73 par l'intermédiaire des deux diodes 71 et 72, passante dans ce sens.The radio frequency current source is connected to the antenna from the terminal 73 via the two diodes 71 and 72, passing in this direction.

Une capacité 75 de découplage, possédant une impédance très faible pour les radiofréquences, est disposée entre la masse et la borne 82.A decoupling capacitor 75, having a very low impedance for the radio frequencies, is arranged between the ground and the terminal 82.

La figure 8 représente schématiquement un autre mode de réalisation possible d'une surface de rayonnement.The figure 8 schematically represents another possible embodiment of a radiation surface.

Selon ce mode de réalisation, la surface comporte trois zones de rayonnement 51, 52 et 53.According to this embodiment, the surface comprises three radiation zones 51, 52 and 53.

Les zones 51 et 53 sont séparées entre elles par la jonction 41 qui comporte une fente ayant à ses extrémités les moyens E1 et E2.The zones 51 and 53 are separated from each other by the junction 41 which comprises a slot having at its ends the means E 1 and E 2 .

Les moyens E1 sont situés sur la périphérie 7 de la surface, alors que les moyens E2 sont situés au milieu de la surface 2 de rayonnement.The means E 1 are located on the periphery 7 of the surface, while the means E 2 are located in the middle of the radiation surface 2.

Le point de mise à la masse G est situé sur la zone 51, tandis que le point d'attaque A est situé sur la zone 53. Un circuit de contrôle 90, décrit plus en détail sur la figure 9, est relié au point d'attaque.The grounding point G is located on the zone 51, while the point of attack A is located on the zone 53. A control circuit 90, described in more detail on the figure 9 , is connected to the point of attack.

La présence de la jonction 41 et des moyens E1 et E2 permet de forcer le passage du courant continu du point A vers le point G en passant par la périphérie 7 de la surface de rayonnement.The presence of the junction 41 and the means E 1 and E 2 makes it possible to force the passage of the direct current from the point A towards the point G through the periphery 7 of the radiating surface.

Préférentiellement, les moyens E1 et E2 comportent des capacités de découplage GSM et DCS. Les capacités sont typiquement de l'ordre de 22 pF en taille 0402.Preferably, the means E 1 and E 2 comprise decoupling capabilities GSM and DCS. Capacities are typically of the order of 22 pF in size 0402.

On définit donc grâce à ce dispositif de contrôle deux chemins différents pour le courant continu et pour le courant de radiofréquence. Les moyens E1 et E2 sont en effet transparents pour les courants de radiofréquences.This control device therefore defines two different paths for the direct current and for the radiofrequency current. The means E 1 and E 2 are indeed transparent for radio frequency currents.

Les zones 51 et 53 d'une part sont séparées de la zone 52 d'autre part par la jonction 42 qui comporte une fente ayant à ses extrémités, sur la périphérie 7 de la surface 2, les moyens S1 et S2.The zones 51 and 53 on the one hand are separated from the zone 52 on the other hand by the junction 42 which comprises a slot having at its ends, on the periphery 7 of the surface 2, the means S 1 and S 2 .

Les jonctions 41 et 42 sont situées sensiblement perpendiculairement entre elles.The junctions 41 and 42 are located substantially perpendicular to each other.

On place préférentiellement deux diodes de type BAR 88 en S1 et deux diodes en S2, pour avoir la valeur d'isolement adéquate.Two BAR type diodes 88 are preferentially placed at S 1 and two diodes at S 2 , in order to obtain the appropriate isolation value.

Les sens passants des diodes sont placés de sorte qu'un courant puisse circuler de A vers G sur la périphérie 7 de la surface 2.The passing directions of the diodes are placed so that a current can flow from A to G on the periphery 7 of the surface 2.

Une fente 5 pratiquée dans la zone 52 permet de donner à la surface 2 la résonance GSM.A slot 5 made in the zone 52 makes it possible to give the surface 2 the GSM resonance.

Le système de contrôle 90 est représenté schématiquement à la figure 9.The control system 90 is shown schematically at the figure 9 .

Sur cette figure 9, les éléments ayant des fonctions similaires à ceux représentés sur la figure 7, portent des références numériques identiques.On this figure 9 , the elements having functions similar to those represented on the figure 7 , bear identical numerical references.

Une borne de contrôle 83 reliée à une source de courant de 25 mA par exemple est prévue pour contrôler des moyens 78 interrupteur électrique.A control terminal 83 connected to a current source of 25 mA, for example, is provided for controlling electrical switch means 78.

Les moyens 78 sont également reliés à une tension de -20 Volt par exemple sur une borne 81, par exemple au travers de la résistance 76. Cette tension de -20 Volt empêche la formation d'harmoniques.The means 78 are also connected to a voltage of -20 volts for example on a terminal 81, for example through the resistor 76. This voltage of -20 volts prevents the formation of harmonics.

On connecte une branche comportant une inductance de choc 74 par la borne 82 située entre les moyens 78 et la résistance 76.A branch having a shock inductance 74 is connected by the terminal 82 situated between the means 78 and the resistor 76.

Ladite branche relie les moyens 78 à une source de courant de radiofréquences RF, connectée au dispositif de contrôle au point 73. L'inductance 74 à une impédance très élevée pour les radiofréquences.Said branch connects the means 78 to an RF radio frequency power source, connected to the control device at point 73. The inductor 74 has a very high impedance for radio frequencies.

La source de courant de radiofréquences est reliée à l'antenne à partir de la borne 73 par l'intermédiaire d'au moins une diode 71, passante dans ce sens.The radio frequency current source is connected to the antenna from the terminal 73 via at least one diode 71, passing in this direction.

Une capacité 75 de découplage, possédant une impédance très faible pour les radiofréquences, est disposée entre la masse et la borne 82.A decoupling capacitor 75, having a very low impedance for the radio frequencies, is arranged between the ground and the terminal 82.

Dans l'exemple illustré dans la présente demande, le mode GSM est enclenché lors que les moyens 78 sont dans un état fermé, et le mode DCS est enclenché lors les moyens 78 sont dans un état ouvert.In the example illustrated in the present application, the GSM mode is engaged when the means 78 are in a closed state, and the DCS mode is engaged when the means 78 are in an open state.

On comprend que dans tous les modes de réalisation des développements qui précèdent le courant de commande des commutateurs arrive à l'antenne par le point d'attaque. L'unique composante continue circule adéquatement dans les commutateurs, de par d'une part la géométrie de la surface rayonnante et/ou de par les découplages entre les zones de rayonnement, et d'autre part les commandes. Cela a pour avantage d'avoir un point de commande unique.It is understood that in all embodiments of the developments that precede the switch control current arrives at the antenna by the point of attack. The single DC component circulates properly in the switches, on the one hand by the geometry of the radiating surface and / or by the decoupling between the radiation zones, and on the other hand the controls. This has the advantage of having a single point of order.

Les développements qui précèdent s'appliquent avantageusement à des moyens de commutation comportant des diodes.The foregoing developments advantageously apply to switching means having diodes.

Les moyens formant commutateurs peuvent également comporter des microsystèmes électromécaniques d'une technologie MEMS ou « microelectronic mechanical system » selon la terminologie anglo-saxonne généralement utilisée par l'homme du métier.The means forming switches may also comprise microelectromechanical systems of a MEMS technology or "microelectronic mechanical system" according to the English terminology generally used by those skilled in the art.

Claims (12)

  1. Transmission/reception antenna comprising a ground plane (1) and at least one planar radiation surface (2) which extends in front of said ground plane (1) and parallel to it, wherein the radiation surface (2) is divided into at least two radiation zones (51, 52; 51, 52, 53) separated by at least one junction (4; 41, 42), wherein the at least one junction (4; 41, 42) between the radiation zones (51, 52; 51, 52, 53) comprises means (60, 61; E1, E2, S1, S2) forming switches for bringing in resonance all or part of the radiation surface (2) by connecting electrically all or part of the radiation zones (51, 52), wherein the planar radiation surface (2) comprises a grounding point (G) and an attack point (A), characterized
    in that the control current of the switches arrives at the antenna through the attack point (A); and
    by at least one slit (5) having an opening (6), the opening (6) being located at the periphery (7) of the radiation surface (2); and
    by means (61) forming switches capable of permitting the flow of current at a periphery (7) of the radiation surface (2) in a closed state or permitting the flow of current at an internal periphery (8) of the slit (5) in an open state.
  2. Antenna according to claim 1, characterized in that at least one radiation zone (51, 52) comprises the at least one slit (5) and in that the slit (5) comprises a radiation slit (5).
  3. Antenna according to claim 2, characterized in that the slit (5) is capable of permitting the radiation of the radiation surface (2) in a first frequency band when all the radiation zones (51, 52) are connected to each other.
  4. Antenna according to claim 3, characterized in that said first band is the frequency band around 900 MHz, preferably that of the global system for mobile communications (GSM), in particular from 824 MHz to 960 Mhz.
  5. Antenna according to one of claims 1 to 4, characterized in that the radiation surface is capable of radiating in a second frequency band when some of the switches (60) located at the junctions of the radiation zones are in an open state.
  6. Antenna according to claim 5, characterized in that said second band is the frequency band around 1800 MHz, preferably that of the Digital Communication System (DCS) 1800, in particular from 1710 MHz to 1990Mhz.
  7. Antenna according to one of claims 1 to 6, characterized in that the means (60, 61) forming switches are active switches having low losses and a high insulating capability.
  8. Antenna according to claim 6, characterized in that the switches (60, 61) comprise a PIN diode.
  9. Antenna according to claim 6, characterized in that the switches (60, 61) comprise an active element of the field effect transistor type.
  10. Antenna according to one of claims 8 or 9, characterized in that a radiation zone (53) comprises the attack point (A) and another zone (51) comprises the grounding point (G), wherein the two zones are separated by a junction comprising decoupling means capable of forcing the flow of the direct current from the attack point (A) towards the grounding point (G) through the periphery (7) of the radiation surface.
  11. Antenna according to one of claims 1 to 6, characterized in that the means (60, 61) forming switches are micro-electromechanical systems (MEMS).
  12. Telephone, characterized in that it comprises an antenna according to one of the previous claims.
EP04293084.2A 2003-12-23 2004-12-22 Multi-band antenna with planar radiating surfaces and portable phone comprising such an antenna Ceased EP1548877B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0315313A FR2864353B1 (en) 2003-12-23 2003-12-23 ANTENNA WITH SURFACE (S) RADIANT (S) PLANE (S) MULTIBAND AND PORTABLE TELEPHONE HAVING SUCH ANTENNA.
FR0315313 2003-12-23

Publications (2)

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EP1548877A1 EP1548877A1 (en) 2005-06-29
EP1548877B1 true EP1548877B1 (en) 2014-03-05

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Application Number Title Priority Date Filing Date
EP04293084.2A Ceased EP1548877B1 (en) 2003-12-23 2004-12-22 Multi-band antenna with planar radiating surfaces and portable phone comprising such an antenna

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EP (1) EP1548877B1 (en)
FR (1) FR2864353B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8780007B2 (en) * 2011-05-13 2014-07-15 Htc Corporation Handheld device and planar antenna thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004095633A1 (en) * 2003-04-24 2004-11-04 Amc Centurion Ab Antenna device and portable radio communication device comprising such an antenna device
EP1714351A1 (en) * 2004-02-02 2006-10-25 AMC Centurion AB Antenna device and portable radio communication device comprising such an antenna device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780724A (en) * 1986-04-18 1988-10-25 General Electric Company Antenna with integral tuning element
GB2335798B (en) * 1998-03-26 2003-01-29 Nec Technologies Enhanced bandwidth antennas
AU7048300A (en) * 1999-09-10 2001-04-17 Avantego Ab Antenna arrangement
CN1249851C (en) * 1999-10-18 2006-04-05 松下电器产业株式会社 Antenna of the same technology and for both radio communication and portable radio device
US6362789B1 (en) * 2000-12-22 2002-03-26 Rangestar Wireless, Inc. Dual band wideband adjustable antenna assembly
FI115343B (en) * 2001-10-22 2005-04-15 Filtronic Lk Oy Internal multi-band antenna

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004095633A1 (en) * 2003-04-24 2004-11-04 Amc Centurion Ab Antenna device and portable radio communication device comprising such an antenna device
EP1714351A1 (en) * 2004-02-02 2006-10-25 AMC Centurion AB Antenna device and portable radio communication device comprising such an antenna device

Also Published As

Publication number Publication date
FR2864353A1 (en) 2005-06-24
FR2864353B1 (en) 2006-08-04
EP1548877A1 (en) 2005-06-29

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