EP1715597B1 - Antenna composed of planar surfaces connected by switching circuits - Google Patents

Antenna composed of planar surfaces connected by switching circuits Download PDF

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Publication number
EP1715597B1
EP1715597B1 EP06110781.9A EP06110781A EP1715597B1 EP 1715597 B1 EP1715597 B1 EP 1715597B1 EP 06110781 A EP06110781 A EP 06110781A EP 1715597 B1 EP1715597 B1 EP 1715597B1
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EP
European Patent Office
Prior art keywords
mhz
radiation
diodes
zone
inductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP06110781.9A
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German (de)
French (fr)
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EP1715597A2 (en
EP1715597A3 (en
Inventor
Fernando Romao
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Apple Inc
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Apple Inc
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Publication of EP1715597A2 publication Critical patent/EP1715597A2/en
Publication of EP1715597A3 publication Critical patent/EP1715597A3/en
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Publication of EP1715597B1 publication Critical patent/EP1715597B1/en
Ceased legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/06—Details
    • H01Q9/14—Length of element or elements adjustable
    • H01Q9/145—Length of element or elements adjustable by varying the electrical length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/30—Combinations of separate antenna units operating in different wavebands and connected to a common feeder system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
    • H01Q5/314—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors
    • H01Q5/321—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors within a radiating element or between connected radiating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
    • H01Q5/342—Individual or coupled radiating elements, each element being fed in an unspecified way for different propagation modes
    • H01Q5/357—Individual or coupled radiating elements, each element being fed in an unspecified way for different propagation modes using a single feed point
    • H01Q5/364—Creating multiple current paths
    • H01Q5/371—Branching current paths

Definitions

  • the present invention relates to mobile telephony.
  • an antenna surface (s) radiant (s) plane (s) having a switchable circuit More specifically, it relates to an antenna surface (s) radiant (s) plane (s) having a switchable circuit.
  • the invention proposes in particular an antenna of this type capable of being used in transmission / reception over at least two frequency bands, and having improved performances compared to antennas of the state of the art.
  • PIFA Planar Inverted-F Antenna
  • flat antenna type F inverted flat antenna type F inverted
  • Patch which include, as illustrated by the figure 1 , a ground plane 1 and a plane conductive surface 2 which is superimposed on this ground plane 1, and extends at right and substantially parallel thereto.
  • patch antennas are widely used in mobile telephony because these antennas offer acceptable radiation performance (far-field measurement) while locally producing a lower near field than conventional antennas whip or helical antennas.
  • One of the current concerns is to define an antenna covering multiple bands.
  • GSM global system of mobile communications
  • UMTS universal system of telecommunication with mobiles
  • a first solution is of course to use several antennas.
  • a second solution is to use a single antenna with multiple resonances.
  • these antennas are very difficult to cover all bands by providing good performance. If they succeed, it is at the cost of an increase in the complexity of the antenna (especially because of additional resonators and a large number of access points) or the volume of the antenna.
  • the inventors are not aware of a commercial product incorporating a low volume integrated antenna (compatible with mobile phone integration) that covers all these frequency bands with a limited number of access points to the antenna.
  • a third solution is to use switchable antennas.
  • These antennas have more than one access point and include switchable elements within the antenna. It is therefore difficult to find a simple and efficient antenna control system.
  • the switchable antennas are most often implemented using PIN diodes. Therefore, there may be harmonic generation during a transmission in high power mode (1 watt for example).
  • the first method is to provide a circuit assembly whose diodes are always broadcast. Such a method is too strong a constraint for the design of an antenna covering multiple frequency bands.
  • the second method is to provide an assembly in which the blocked diodes are polarized with a strongly negative voltage, typically -40 to -60 volts for example, for a system accepting a power of 33dBm.
  • a strongly negative voltage typically -40 to -60 volts for example, for a system accepting a power of 33dBm.
  • a high negative voltage is sometimes difficult to generate in addition to being incompatible with certain diodes (maximum reverse voltage of the order of -0 volts).
  • the third method is to provide a montage as on the Figure 2A , namely whose diodes 3 are placed "head-to-tail", to reduce the generation of harmonics.
  • a central common terminal 65 to the diodes 3 is the cathode of each diode.
  • the Figure 2B also represents the diodes in head-to-tail configuration in the other direction (with the terminal central common 65 being the anode). It is known for a mode-driven operation that an assembly with diodes back-to-back makes it possible to reduce the harmonics. In a driven array, the diodes are naturally placed symmetrically. The reduction of harmonics is excellent.
  • any use of a diode topology placed "head-to-tail" is often described as unsuitable for antennas because it requires many access points.
  • the number of access points must be limited.
  • the pure and simple transposition of circuit design methods with back-to-back diodes to antennas used in conduit generally generates circuits producing harmonics of power higher than the limits fixed by the standards in force in mobile telephony.
  • US2003 / 0146873 A1 discloses an antenna according to the preamble of claim 1.
  • the invention proposes to overcome these disadvantages.
  • the invention proposes a transmitting / receiving antenna according to claim 1.
  • a variant of the assembly may be to use a multilayer antenna : the direct current flows on one layer or the other, the RF current will ignore the two layers by seeing only one, given the very strong coupling (close surfaces facing).
  • the invention also relates to a mobile phone comprising an aforementioned antenna and a method of manufacturing such an antenna.
  • the invention has many advantages.
  • the invention has many advantages.
  • the invention proposes an antenna comprising a diode assembly in a back-to-back configuration, which makes it possible to limit the generation of harmonics and therefore to propose a mobile phone that meets the standards in force. Indeed, simulations confirmed by measurements have made it possible to demonstrate that the power of the harmonics generated by an antenna according to the invention is less than -30 dBm at a frequency of 2 GHz for an injected power of 33 dBm at 1 GHz .
  • the invention proposes an antenna that does not require the generation of a large negative voltage.
  • the antenna is therefore compatible with all PIN diodes and does not require the creation of the aforementioned negative voltage.
  • the transmitting / receiving antenna schematically represented on the figure 3 comprises a ground plane (not shown) and a plane radiating surface 2 which extends superimposed on said ground plane while being substantially parallel thereto.
  • An antenna according to the invention may comprise more than one planar radiating surface.
  • the radiating surface 2 is connected on one side to the ground plane by the connection point G and on the other side to a transmission / reception electronics of the RF radio frequency signals as well as to an electronic control C by the point of connection A, which can also be called the point of attack.
  • a capacitor 73 is connected between the radio frequency transmission / reception electronics and the connection point A.
  • the capacitor 73 has a very low impedance for the radio frequency currents but has a very high impedance for the DC or frequency currents. low.
  • the radiation surface 2 is divided into at least two radiation zones 51 and 52 separated by a junction 41 formed over most of its length with a slot.
  • the surface 2 comprises a third radiation zone 53 separated from the zone 51 by a junction 42 also formed over most of its length by a slot.
  • the ends of the junction 42 comprise decoupling means 421 and 422 also forming a mechanical connection between the zones 51 and 53. The operation of the decoupling means 421 and 422 is described in more detail later in the present description.
  • the junction 41 between the zone 51 and the zone 52 comprises a symmetrical active switch 60 described in more detail in the remainder of this description.
  • the junction 41 also comprises an inductor 70 connected between a terminal 71 located on the zone 53 and a terminal 72 situated on the zone 52.
  • the radiation zone 51 comprises an isolated zone 4.
  • the isolated zone 4 is connected to the remainder of the zone 51 by three decoupling means 43 located on three sides of the zone 4.
  • the isolated zone 4 has the smallest possible area in order to reduce the number of decoupling means 43 to put in place.
  • the symmetrical switch 60 mainly comprises two diodes 31 and 32 connected in series in a back-to-back configuration between a terminal 40 located on the insulated zone 4 and a terminal 520 located on the radiation zone 52.
  • the diodes are active diodes PIN.
  • a configuration called "head-to-tail” is a configuration in which the diodes are connected. in series symmetrically with respect to a central terminal 65 located in the middle of the two diodes 31 and 32.
  • the central common point 65 to the diodes 31 and 32 is the cathode of each diode.
  • the switch 60 further comprises symmetry components 62 and 63 providing electrical symmetry of the switch for radio frequency currents.
  • the switch 60 comprises a first inductor 61 connected on the one hand between a terminal 66 located on the radiation zone 51 (not on the isolated zone 4) and on the other hand the central terminal 65 located between the two diodes 31 and 32.
  • the balancing components comprise a second inductor 62 of the same value as the first inductance 61, to compensate exactly the RF behavior for the positive and negative half-waves due to the inductance 61.
  • the second inductor 62 is connected in series with a capacitor 63.
  • Capacitor 63 has a very low impedance for radio frequency currents and a very high impedance for DC currents or low frequency currents. It is therefore transparent for the radio frequency currents, and no direct current can pass through the inductor 62.
  • the second inductor 62 and the symmetrizing capacitor 63 are connected between a terminal 67 located on the radiation zone 52 and the central terminal 65.
  • Such an arrangement allows switching of the active switch 60 with harmonics generation according to the standards, because of the symmetry of the switch 60 for the radio frequency currents.
  • the inductances 61, 62 have a value of 33 nH and the capacitor 63 has a value of 22 pF.
  • the switch 60 also comprises at least one inductor 64 connected in parallel with the two diodes 31 and 32.
  • the inductor 64 is connected between a terminal 68 located on the insulated zone 4 and a terminal 69 situated on the zone 52.
  • the control of the diodes 31 and 32 is done by means of the command C.
  • the control current of the switch 60 reaches the antenna and the switch 60 via the point of attack A. It then passes into the inductor 61 (not in the inductor 62 due to the presence of the capacitor 63) before dividing into two parts. A first part passes through the diode 31, the zone 4, the inductor 64 and joins the point G by the inductor 70. The second part of the continuous control current coming from the inductor 61 passes through the diode 32 and joins the point G through the inductor 70.
  • the antenna according to the figure 3 can switch between two frequency bands, depending on the control of the switch 60 described above.
  • a first frequency band is reached when the diodes 31 and 32 are blocked.
  • a radiofrequency current if1 flows on the periphery (it is of course the places where the current density is highest) of a first radiation zone constituted by the radiation zones 51 and 53 as shown by the solid line.
  • Current if1 passes through insulated area 4, since capacitors 43 are transparent for radio frequencies. It is recalled that the resonance wavelength of a patch antenna depends in particular on the perimeter of the radiation surface.
  • the decoupling means 421 and 422 are able to prevent the passage of a direct current (for example a control current) from the point A directly to point G. As shown in figure 3 , the means 421 and 422 further enable the flow of radiofrequency current if1 on the periphery of the zones 51 and 53 in particular.
  • the means 421 and 422 are transparent for the radio frequency currents.
  • the means 421 and 422 comprise decoupling capacitors GSM and / or DCS and / or UMTS.
  • the capacities are typically of the order of 22 picofarads. In the remainder of the present description, all the decoupling capacitors have a capacity of this order of magnitude.
  • means 421 and 422 define two different paths for a direct current and for a radio frequency current.
  • Dashed lines show the path of the radio frequency current if2 in the case where the diodes 31 and 32 are on. Another resonant frequency is then defined because of the current path if2 between the points A and G.
  • the means 421 and 422 are important for forcing the passage of the control current from the point A through the inductance 61. and the diodes 31 and 32.
  • the capacitor 63 for its part avoids the passage of the control current in the inductance 62 instead of the diodes 31 and 32.
  • the means 421 and 422 and the capacitor 63 allow the passage of the radiofrequency current according to the dotted lines on the periphery of zones 51, 52 and 53.
  • the value of the radiation frequencies f 1 and f 2 can be varied according to the applications desired.
  • the figure 8A is a mounting variant of the figure 3 .
  • the assembly consists in using a multilayer antenna.
  • the direct control current of the symmetrical switch flows on one or the other layer of the antenna.
  • the RF current ignores the two layers by seeing only one, given the very strong coupling layers (close surfaces facing).
  • the assembly of the figure 8A it is possible to suppress an inductance (the equivalent of the inductance 70 on the assembly of the figure 3 ) and three capacitors (the equivalents of the capacitors 43 on the assembly of the figure 3 ). It also removes the need to have an isolated area (equivalent to the isolated area 4 of the assembly of the figure 3 ).
  • the other elements of the assembly remain identical to those described with reference to the figure 3 .
  • the central terminal 65 to the diodes 31 and 32 is the anode of each diode.
  • the diodes 31 and 32 are placed head to tail.
  • the Figure 8B shows that the elements carrying a cross (point A, periphery of the zones 51 and 53 and inductance 61) are connected to each other on a layer, and the elements bearing a line (point G, periphery of the zones 51 and 53, inductance 64 and diode 31) are connected to each other on another layer.
  • decoupling capacitors 43 on the figure 3
  • uses an antenna consisting of two isolated layers connected by interconnections printed circuit with two layers, rigid or flexible for example).
  • the figure 4 schematically shows a second embodiment of an antenna according to the invention comprising two symmetrical active switches 60.
  • the antenna thus comprises a first radiation zone 52 comprising a grounding point G and possibly a slot indicated by 6.
  • the antenna also comprises a radiation zone 51 comprising an isolated zone 4 connected to the remainder of the zone 51 by decoupling means 43 preferably comprising GSM and / or DCS and / or UMTS decoupling capacitors (the isolated zone 4 has an preferentially the smallest possible area to avoid the multiplication of decoupling means 43).
  • the zone 51 has a point A 'connected to a control C.
  • a capacitor 74 is connected between the point A' and the ground.
  • the point A ' is a control point of the diodes 31 and 32 and a ground point for the RF current because it is connected to ground by a capacitor 74.
  • the zone 51 is connected on one of its sides to the radiation zone 52 by decoupling means 411 and 412, preferably comprising decoupling capacitors GSM and / or DCS and / or UMTS.
  • the zone 51 is also connected to the zone 52 on another of its sides comprising the insulated zone 4 by means of a symmetrical switch 60 identical to that of the figure 3 .
  • the symmetrical switch 60 comprises mainly two diodes 31 and 32 connected in series in a head-to-tail configuration between a terminal 40 situated on the insulated zone 4 and a terminal 520 situated on the radiation zone 52.
  • the switch 60 further comprises symmetry components 62 and 63 providing electrical symmetry of the switch for radio frequency currents.
  • the switch 60 comprises a first inductor 61 connected on the one hand between the terminal 66 located on the radiation zone 51 (not located on the isolated zone 4) and on the other hand a central terminal 65 located between the two diodes 31 and 32 .
  • the switch 60 further comprises the symmetry components 62 and 63 providing the electrical symmetry of the switch for the radio frequencies.
  • the balancing components thus comprise a second inductor 62 of the same value as the first inductor 61.
  • the second inductor 62 is connected in series with a capacitor 63 preventing the passage of DC currents in inductance 62, but making it possible to compensate the effect inductance 61 for the positive and negative half-waves of the radio frequency currents.
  • the second inductor 62 and the balancing capacitor 63 are connected between a terminal 67 located on the radiation zone 52 and the central terminal 65.
  • the switch 60 also comprises at least one inductor 64 connected in parallel with the two diodes 31 and 32.
  • the inductor 64 is connected between a terminal 68 located on the insulated zone 4 and a terminal 69 situated on the zone 52.
  • the antenna also comprises a radiation zone 53 comprising an isolated zone 5 connected to the remainder of the radiation zone by decoupling means 531 (the isolated zone 5 also has a smaller possible area).
  • the zone 53 has a point of attack or connection A.
  • the point of attack A is connected to an electronic transmission / reception of RF radio frequency signals as well as a control electronics C by the point of connection A.
  • A is actually the RF point of attack (point of entry of the antenna).
  • a capacitor 73 is connected between the transmission / reception electronics of the radio frequency signals and the connection point A.
  • the zone 53 is connected to the zone 51 by decoupling means 421 and 422, preferably comprising decoupling capacitors GSM and / or DCS and / or UMTS.
  • the zone 53 is also connected to the zone 52 by a symmetrical switch 60.
  • the diodes 31 and 32 of the switch 60 are in head-to-tail configuration between a terminal 510 situated on the insulated zone 5 and a terminal 522 located on the zone 52.
  • An inductor 61 is connected between on the one hand a terminal 530 located on the zone 53 (not on the insulated area 5) and the central terminal 65, while the symmetrization components (having as before an inductance 62 connected in series of a capacitor 63) are connected between the terminal 65 and a terminal 521 located on the zone 52.
  • An inductor 64 is connected between a terminal 511 located on the insulated zone 5 and a terminal 523 situated on the zone 52.
  • the figure 6 represents the path of the control current between the point A 'connected to the control C of the figure 4 and the grounding point G to switch the switch from the off state to the on state.
  • control current of the diodes 31 and 32 passes over the periphery of the zone 51, the means 411 and 412 playing their decoupling role in order to prevent the current from passing directly from the point A 'to the point G without passing through the diodes. 31 and 32.
  • the means 421 and 422 avoid the passage of the current from the zone 51 to the zone 53.
  • the capacitor 63 prevents the control current from passing through the inductor 62.
  • the current passing through the diode 31 also passes through the insulated zone 4 before passing through the inductor 64 to join the point G of the zone 52.
  • the current passing through the diode 32 passes directly through zone 52 before joining point G.
  • the central terminal 65 of the back-to-back configuration of the diodes 31, 32 is connected to the control point A 'of the diodes 31 and 32 and to the grounding for the RF currents - via the inductor 61 on the terminal 66, the inductor 61
  • the diodes 31 and 32 are connected to the grounding point G - the diode 31 via the inductor 64 on the terminal 69 and the diode 32 on the terminal 520.
  • the inductances 61 and 64 have low values for the control and bias currents of the diodes 31 and 32.
  • the diodes 31 and 32 are connected in parallel.
  • the figure 7 shows schematically that when the two switches 60 are in a non-conducting state (diodes 31 and 32 blocked), then a first resonant frequency f1 is defined by to the path of a current if1 on the periphery of the zones 53, 51 and 52 as shown by the solid line.
  • a frequency f 2 is defined by the flow of the current i.sub.2 shown in phantom.
  • the radiofrequency current if2 passes through the diodes 31 and 32 of the on-switch and on the periphery of the zones 53, 51 and 52.
  • a third frequency f 3 is defined by the current flow if 3 shown in dotted lines. if3 passes through the diodes 31 and 32 of the switch passing on the periphery of the zones 53, 51 and 52.
  • a frequency band is around 900 MHz, preferably that of the global system of mobile communications (GSM), in particular from 823 MHz to 960 MHz, a frequency band is around 1800 MHz, preferably that of the DCS system.
  • GSM global system of mobile communications
  • a frequency band is around 1800 MHz, preferably that of the DCS system.
  • 1800 or "Digital Communication System 1800 MHz” in particular from 1710 MHz to 1990 MHz and a frequency band is around 2000 MHz, preferably that of the universal system of telecommunications with mobiles (UMTS), in particular 1920 and 2170 MHz.
  • the figure 5 shows a third embodiment comprising two symmetrical switches between on the one hand a zone 51 and a zone 52 and on the other hand a zone 53 and the zone 52.
  • the point G of grounding is located on a central zone 54 connected to the zones 51 and 53 by decoupling means 431, 432, 441, 442 preferably comprising decoupling capacitors GSM and / or DCS and / or UMTS.
  • the zone 54 is connected to the zone 52 via an inductance 70 between a terminal 71 on the zone 54 and a terminal 72 on the zone 52.
  • the antenna of the figure 5 allows to switch between three frequency bands: a frequency band is around 900 MHz, preferably that of the global system of mobile communications (GSM), including 823 MHz to 960 MHz, a frequency band is around 1800 MHz, preferably that of the DCS 1800 or "Digital Communication System 1800 MHz" system, in particular from 1710 MHz to 1990 MHz and a frequency band is around 2000 MHz, preferably that of the universal mobile telecommunication system, in particular 1920 and 2170 MHz.
  • GSM global system of mobile communications
  • a frequency band is around 1800 MHz, preferably that of the DCS 1800 or "Digital Communication System 1800 MHz" system, in particular from 1710 MHz to 1990 MHz
  • a frequency band is around 2000 MHz, preferably that of the universal mobile telecommunication system, in particular 1920 and 2170 MHz.

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Description

DOMAINE TECHNIQUE GENERALGENERAL TECHNICAL FIELD

La présente invention concerne la téléphonie mobile.The present invention relates to mobile telephony.

Plus précisément, elle concerne une antenne à surface(s) rayonnante(s) plane(s) comportant un circuit commutable.More specifically, it relates to an antenna surface (s) radiant (s) plane (s) having a switchable circuit.

L'invention propose notamment une antenne de ce type apte à être utilisée en émission/réception sur au moins deux bandes de fréquences, et ayant des performances améliorées par rapport aux antennes de l'état de la technique.The invention proposes in particular an antenna of this type capable of being used in transmission / reception over at least two frequency bands, and having improved performances compared to antennas of the state of the art.

Elle propose également une structure de téléphone mobile comportant une telle antenne.It also offers a mobile phone structure comprising such an antenna.

ETAT DE L'ARTSTATE OF THE ART

Il a déjà été proposé d'utiliser pour les téléphones mobiles des antennes planes, appelées PIFA (« Planar Inverted-F Antenna », antenne plane de type F inversée) ou « patch », qui comportent, ainsi que l'illustre la figure 1, un plan de masse 1 et une surface conductrice plane 2 qui est superposée à ce plan de masse 1, et s'étend au droit et sensiblement parallèlement à celui-ci.It has already been proposed to use for mobile phones flat antennas, called PIFA ("Planar Inverted-F Antenna", flat antenna type F inverted) or "patch", which include, as illustrated by the figure 1 , a ground plane 1 and a plane conductive surface 2 which is superimposed on this ground plane 1, and extends at right and substantially parallel thereto.

Actuellement, les antennes patch sont très utilisées en téléphonie mobile car ce genre d'antennes offre des performances de rayonnement acceptables (mesure en champ lointain) tout en produisant localement un champ proche plus faible que les classiques antennes fouet ou antennes hélicoïdales.Currently, patch antennas are widely used in mobile telephony because these antennas offer acceptable radiation performance (far-field measurement) while locally producing a lower near field than conventional antennas whip or helical antennas.

Une des préoccupations actuelles est de définir une antenne couvrant de multiples bandes.One of the current concerns is to define an antenna covering multiple bands.

A titre d'exemple voici les bandes que doit couvrir idéalement l'antenne d'un téléphone mobile double mode GSM (système mondial de communications mobiles) et UMTS (système universel de télécommunication avec les mobiles) : entre 823 et 894 MHz pour le GSM 800, entre 880 et 960 MHz pour le GSM 900, entre 1710 et 1880 MHz pour le GSM 1800, entre 1850 et 1990 MHz pour le GSM 1900 et enfin entre 1920 et 2170 MHz pour l'UMTS.For example, here are the ideal bands to cover the antenna of a dual-mode mobile phone GSM (global system of mobile communications) and UMTS (universal system of telecommunication with mobiles): between 823 and 894 MHz for GSM 800, between 880 and 960 MHz for the GSM 900, between 1710 and 1880 MHz for the GSM 1800, between 1850 and 1990 MHz for the GSM 1900 and finally between 1920 and 2170 MHz for the UMTS.

Il existe plusieurs solutions permettant de couvrir de multiples bandes.There are several solutions to cover multiple bands.

Une première solution consiste bien entendu à utiliser plusieurs antennes.A first solution is of course to use several antennas.

Elle pose cependant des problèmes si l'on ne veut qu'un seul point d'accès à l'antenne car il y a ajout de commutateurs. Or, une des contraintes des téléphones mobiles est d'offrir idéalement un point d'accès unique à l'antenne de façon à faciliter les tests en fabrication, les recettes chez les clients et la connexion à des accessoires du type "kits mains libres" (au moins tant que tous les véhicules n'incorporent pas un modem cellulaire). Dans le cas d'un "kit mains libres" de voiture, il faut en effet de préférence une connexion d'antenne unique, qui est plus simple si l'antenne est unique et couvre toutes les bandes. S'il y avait deux antennes distinctes, cela exigerait le montage d'un aiguilleur RF des deux antennes vers la connectique coaxiale d'antenne du "kit mains libres". De plus, le volume global des différentes antennes est plus important qu'une seule antenne couvrant toutes les bandes. Le protocole UMTS descendra à terme en fréquence, et il est difficilement pensable de multiplier les antennes basse fréquence dans un téléphone mobile, car le volume total serait prohibitif.However, it poses problems if we want only one point of access to the antenna because there is addition of switches. One of the constraints of mobile phones is to ideally offer a single point of access to the antenna so as to facilitate manufacturing tests, customer receipts and connection to accessories such as "hands-free kits". (at least until all vehicles incorporate a cellular modem). In the case of a car "handsfree", it is indeed preferably a single antenna connection, which is simpler if the antenna is unique and covers all bands. If there were two separate antennas, this would require mounting an RF switch from both antennas to the coaxial antenna connector of the "hands-free kit". In addition, the overall volume of different antennas is larger than a single antenna covering all bands. The UMTS protocol will eventually come down in frequency, and it is difficult to think of multiplying the low frequency antennas in a mobile phone, because the total volume would be prohibitive.

Une deuxième solution consiste à utiliser une seule antenne avec de multiples résonances.A second solution is to use a single antenna with multiple resonances.

Généralement ces antennes parviennent très difficilement à couvrir toutes les bandes en offrant de bonnes performances. Si elles y parviennent, c'est au prix d'un accroissement de la complexité de l'antenne (notamment à cause de résonateurs supplémentaires et d'un nombre important de points d'accès) ou du volume de l'antenne.Generally these antennas are very difficult to cover all bands by providing good performance. If they succeed, it is at the cost of an increase in the complexity of the antenna (especially because of additional resonators and a large number of access points) or the volume of the antenna.

Les inventeurs n'ont pas connaissance d'un produit commercial incorporant une antenne intégrée de volume faible (compatible avec une intégration dans un téléphone mobile) qui couvre toutes ces bandes de fréquences avec un nombre de points d'accès à l'antenne limité.The inventors are not aware of a commercial product incorporating a low volume integrated antenna (compatible with mobile phone integration) that covers all these frequency bands with a limited number of access points to the antenna.

Une troisième solution consiste à utiliser des antennes commutables.A third solution is to use switchable antennas.

Ces antennes ont plus d'un point d'accès et comportent des éléments commutables au sein de l'antenne. Il est donc difficile de trouver un système de contrôle de l'antenne simple et performant. De plus, les antennes commutables sont le plus souvent mises en oeuvre en utilisant des diodes PIN. Par conséquent, il peut y avoir génération d'harmoniques lors d'une transmission en mode conduit à forte puissance (1 watt par exemple).These antennas have more than one access point and include switchable elements within the antenna. It is therefore difficult to find a simple and efficient antenna control system. In addition, the switchable antennas are most often implemented using PIN diodes. Therefore, there may be harmonic generation during a transmission in high power mode (1 watt for example).

L'explication de la génération d'harmoniques dans les diodes PIN est la suivante. Supposons que l'on effectue un montage électrique classique à une diode polarisée à 0 volt. Lors du passage d'une alternance RF positive au niveau de la diode, la diode devient passante. Lors du passage de l'alternance RF négative, la diode se bloque. Au point de jonction avec la diode (qui est par exemple l'anode), la forme d'onde (à savoir le champ électrique) est déformée par l'effet de non linéarité de la diode, ce qui crée des harmoniques.The explanation of the generation of harmonics in the PIN diodes is as follows. Suppose a conventional electrical circuit is made to a diode polarized at 0 volts. When passing a positive RF alternation at the diode, the diode becomes conductive. During the passage of the negative RF alternation, the diode is blocked. At the junction point with the diode (which is for example the anode), the waveform (ie the electric field) is distorted by the non-linearity effect of the diode, which creates harmonics.

Par ailleurs et d'une façon générale, dans le cas d'un circuit quelconque comportant des diodes PIN fonctionnant en mode conduit, il existe trois méthodes classiques pour limiter la génération d'harmoniques.Furthermore, and in general, in the case of any circuit having PIN diodes operating in the duct mode, there are three conventional methods for limiting the generation of harmonics.

La première méthode est de prévoir un montage du circuit dont les diodes sont toujours passantes en émission. Une telle méthode est une contrainte trop forte pour la conception d'une antenne couvrant de multiples bandes de fréquences.The first method is to provide a circuit assembly whose diodes are always broadcast. Such a method is too strong a constraint for the design of an antenna covering multiple frequency bands.

La deuxième méthode est de prévoir un montage dont les diodes bloquées sont polarisées avec une tension fortement négative, typiquement de -40 à -60 volts par exemple, pour un système acceptant une puissance de 33dBm. Cependant, une forte tension négative est parfois difficile à générer en plus d'être incompatible avec certaines diodes (tension inverse maximale de l'ordre de -0 volt).The second method is to provide an assembly in which the blocked diodes are polarized with a strongly negative voltage, typically -40 to -60 volts for example, for a system accepting a power of 33dBm. However, a high negative voltage is sometimes difficult to generate in addition to being incompatible with certain diodes (maximum reverse voltage of the order of -0 volts).

La troisième méthode est de prévoir un montage comme sur la figure 2A, à savoir dont les diodes 3 sont placées "tête-bêche", afin de réduire la génération d'harmoniques. Une borne commune centrale 65 aux diodes 3 est la cathode de chaque diode. La figure 2B représente également les diodes en configuration tête-bêche dans l'autre sens (avec la borne commune centrale 65 étant l'anode). Il est connu pour un fonctionnement en mode conduit qu'un montage avec des diodes tête-bêche permet de diminuer les harmoniques. Dans un montage conduit, les diodes sont naturellement placées de façon symétrique. La réduction des harmoniques est donc excellente.The third method is to provide a montage as on the Figure 2A , namely whose diodes 3 are placed "head-to-tail", to reduce the generation of harmonics. A central common terminal 65 to the diodes 3 is the cathode of each diode. The Figure 2B also represents the diodes in head-to-tail configuration in the other direction (with the terminal central common 65 being the anode). It is known for a mode-driven operation that an assembly with diodes back-to-back makes it possible to reduce the harmonics. In a driven array, the diodes are naturally placed symmetrically. The reduction of harmonics is excellent.

Cependant, toute utilisation d'une topologie de diodes placées "tête-bêche" est souvent qualifiée d'inadaptée aux antennes, car cela nécessite de nombreux points d'accès. Or on a déjà mentionné que pour les antennes, le nombre de points d'accès doit être limité. En outre, la transposition pure et simple des méthodes de conception de circuits avec des diodes tête-bêche a des antennes utilisées en conduit engendre généralement des circuits produisant des harmoniques de puissance supérieure aux limites fixées par les normes en vigueur en téléphonie mobile. US2003/0146873 A1 divulgue une antenne selon le préambule de la revendication 1.However, any use of a diode topology placed "head-to-tail" is often described as unsuitable for antennas because it requires many access points. However, it has already been mentioned that for antennas, the number of access points must be limited. In addition, the pure and simple transposition of circuit design methods with back-to-back diodes to antennas used in conduit generally generates circuits producing harmonics of power higher than the limits fixed by the standards in force in mobile telephony. US2003 / 0146873 A1 discloses an antenna according to the preamble of claim 1.

PRESENTATION DE L'INVENTIONPRESENTATION OF THE INVENTION

L'invention propose de pallier ces inconvénients.The invention proposes to overcome these disadvantages.

A cet effet l'invention propose une antenne d'émission/réception selon la revendication 1.For this purpose the invention proposes a transmitting / receiving antenna according to claim 1.

L'invention est avantageusement complétée par les caractéristiquesThe invention is advantageously completed by the characteristics

L'invention est avantageusement complétée par les caractéristiques suivantes, prises seules ou en une quelconque de leur combinaison techniquement possible:

  • la surface plane de rayonnement comporte un point de mise à la masse et au moins un point d'attaque ou de masse de courants de radiofréquences, le courant de commande continu du commutateur symétrique arrivant à l'antenne par le point d'attaque ou de masse de courants de radiofréquences, une borne centrale de la configuration tête-bêche des diodes étant reliée au point d'attaque ou de masse de courants de radiofréquences et les bornes des diodes opposées à la borne, centrale étant reliées au point de mise à la masse de sorte que lesdites diodes sont branchées en parallèle pour le courant de commande ;
  • le commutateur symétrique comporte au moins une inductance branchée en parallèle des deux diodes tête-bêche ;
  • l'antenne comporte au moins trois zones de rayonnement
  • l'antenne comporte au moins trois zones de rayonnement ;
  • une bande de fréquences est aux alentours de 900 MHz, de préférence celle du système mondial de communications mobiles, notamment de 823 MHz à 960 MHz et/ou une bande de fréquences est aux alentours de 1800 MHz, de préférence celle du système DCS 1800 ou « Digital Communication System 1800 MHz », notamment de 1710 MHz à 1990 MHz et/ou une bande de fréquences est aux alentours de 2000 MHz, de préférence celle du système universel de télécommunication avec les mobiles, notamment 1920 et 2170 MHz ;
  • l'antenne comporte des moyens de découplage comportant des condensateurs de découplage GSM et/ou DCS et/ou UMTS ;
The invention is advantageously completed by the following features, taken alone or in any of their technically possible combination:
  • the planar surface of radiation has a grounding point and at least one grounding point or mass of radio frequency currents, the continuous control current of the symmetrical switch arriving at the antenna by the point of attack or ground of radiofrequency currents, a central terminal of the back-to-back configuration of the diodes being connected to the point of attack or ground of radiofrequency currents and the terminals of the diodes opposite to the terminal, central being connected to the grounding point so that said diodes are connected in parallel for the control current;
  • the symmetrical switch comprises at least one inductor connected in parallel with the two diodes head to tail;
  • the antenna has at least three radiation zones
  • the antenna has at least three radiation zones;
  • a frequency band is around 900 MHz, preferably that of the global mobile communications system, in particular from 823 MHz to 960 MHz and / or a frequency band is around 1800 MHz, preferably that of the DCS 1800 system or "Digital Communication System 1800 MHz", in particular from 1710 MHz to 1990 MHz and / or a frequency band is around 2000 MHz, preferably that of the universal system of telecommunication with mobiles, in particular 1920 and 2170 MHz;
  • the antenna comprises decoupling means comprising GSM and / or DCS and / or UMTS decoupling capacitors;

Une variante du montage peut consister à utiliser une antenne multicouche : le courant continu circule sur une couche ou l'autre, la courant RF ignorera les 2 couches en n'en voyant qu'une seule, compte tenu du couplage très fort (surfaces proches en vis à vis).A variant of the assembly may be to use a multilayer antenna : the direct current flows on one layer or the other, the RF current will ignore the two layers by seeing only one, given the very strong coupling (close surfaces facing).

L'invention concerne également un téléphone mobile comportant une antenne précitée et un procédé de fabrication d'une telle antenne.The invention also relates to a mobile phone comprising an aforementioned antenna and a method of manufacturing such an antenna.

L'invention présente de nombreux avantages.The invention has many advantages.

L'invention présente de nombreux avantages.The invention has many advantages.

L'invention propose une antenne comportant un montage de diodes en configuration tête-bêche, ce qui permet de limiter la génération d'harmoniques et donc de proposer un téléphone mobile répondant aux normes en vigueur. En effet, des simulations confirmées par des mesures ont permis de mettre en évidence que la puissance des harmoniques générées par une antenne conforme à l'invention est inférieure à -30dBm à une fréquence de 2 GHz pour une puissance injectée de 33 dBm à 1 GHz.The invention proposes an antenna comprising a diode assembly in a back-to-back configuration, which makes it possible to limit the generation of harmonics and therefore to propose a mobile phone that meets the standards in force. Indeed, simulations confirmed by measurements have made it possible to demonstrate that the power of the harmonics generated by an antenna according to the invention is less than -30 dBm at a frequency of 2 GHz for an injected power of 33 dBm at 1 GHz .

L'invention propose une antenne ne nécessitant pas la génération d'une tension négative importante. L'antenne est donc compatible avec l'ensemble des diodes PIN et ne nécessite pas la création de la tension négative précitée.The invention proposes an antenna that does not require the generation of a large negative voltage. The antenna is therefore compatible with all PIN diodes and does not require the creation of the aforementioned negative voltage.

PRESENTATION DES FIGURESPRESENTATION OF FIGURES

D'autres caractéristiques, buts et avantages de l'invention ressortiront de la description qui suit, qui est purement illustrative et non limitative, et qui doit être lue en regard des dessins annexés sur lesquels :

  • la figure 1, déjà commentée, représente schématiquement une antenne de type patch conforme à un état de la technique connue ;
  • les figures 2A et 2B, déjà discutées, représentent schématiquement une configuration tête-bêche de deux diodes ;
  • la figure 3 représente un premier mode de réalisation possible d'une antenne comportant un commutateur symétrique ;
  • la figure 4 représente un deuxième mode de réalisation possible d'une antenne comportant deux commutateurs symétriques ;
  • la figure 5 représente un troisième mode de réalisation possible d'une antenne comportant deux commutateurs symétriques ;
  • la figure 6 représente schématiquement le trajet du courant continu de contrôle dans un commutateur symétrique disposé dans une antenne selon la figure 4 ;
  • la figure 7 représente schématiquement le trajet du courant de radiofréquences en fonction de l'état ouvert ou fermé des deux commutateurs symétriques disposés dans une antenne selon la figure 4 ;
  • la figure 8A représente schématiquement une variante de montage du circuit de la figure 3 consistant à utiliser une antenne multicouche ; et
  • la figure 8B montre schématiquement les zones reliées entre elles sur le schéma de la figure 8A.
Other features, objects and advantages of the invention will emerge from the description which follows, which is purely illustrative and nonlimiting, and which should be read with reference to the appended drawings in which:
  • the figure 1 , already commented, schematically shows a patch type antenna according to a state of the art;
  • the Figures 2A and 2B , already discussed, schematically represent a head-to-tail configuration of two diodes;
  • the figure 3 represents a first possible embodiment of an antenna comprising a symmetrical switch;
  • the figure 4 represents a second possible embodiment of an antenna comprising two symmetrical switches;
  • the figure 5 represents a third possible embodiment of an antenna comprising two symmetrical switches;
  • the figure 6 schematically represents the path of the control DC current in a symmetrical switch disposed in an antenna according to the figure 4 ;
  • the figure 7 schematically represents the path of the radio frequency current as a function of the open or closed state of the two symmetrical switches arranged in an antenna according to the figure 4 ;
  • the figure 8A schematically represents a mounting variant of the circuit of the figure 3 using a multilayer antenna; and
  • the Figure 8B schematically shows the areas connected to each other on the diagram of the figure 8A .

Sur l'ensemble des figures, les éléments ayant des fonctions similaires portent des références numériques identiques.In all of the figures, the elements having similar functions have identical reference numerals.

DESCRIPTION DETAILLEEDETAILED DESCRIPTION

L'antenne d'émission/réception représentée schématiquement sur la figure 3 comporte un plan de masse (non représenté) et une surface rayonnante plane 2 qui s'étend de façon superposée audit plan de masse en étant sensiblement parallèle à celui-ci.The transmitting / receiving antenna schematically represented on the figure 3 comprises a ground plane (not shown) and a plane radiating surface 2 which extends superimposed on said ground plane while being substantially parallel thereto.

Une antenne selon l'invention peut comporter plus d'une surface rayonnante plane.An antenna according to the invention may comprise more than one planar radiating surface.

A une de ses extrémités, la surface rayonnante 2 est reliée d'un côté au plan de masse par le point de liaison G et d'un autre à une électronique d'émission/réception des signaux radiofréquences RF ainsi qu'à une électronique de contrôle C par le point de liaison A, qui peut également être appelé point d'attaque.At one of its ends, the radiating surface 2 is connected on one side to the ground plane by the connection point G and on the other side to a transmission / reception electronics of the RF radio frequency signals as well as to an electronic control C by the point of connection A, which can also be called the point of attack.

Un condensateur 73 est branché entre l'électronique d'émission/réception des signaux radiofréquences et le point de liaison A. Le condensateur 73 possède une impédance très faible pour les courants de radiofréquences mais possède une impédance très élevée pour les courants continus ou à fréquence faible.A capacitor 73 is connected between the radio frequency transmission / reception electronics and the connection point A. The capacitor 73 has a very low impedance for the radio frequency currents but has a very high impedance for the DC or frequency currents. low.

Comme le montre la figure 3, la surface de rayonnement 2 est divisée en au moins deux zones 51 et 52 de rayonnement séparées par une jonction 41 formée sur la plupart de sa longueur d'une fente.As shown in figure 3 , the radiation surface 2 is divided into at least two radiation zones 51 and 52 separated by a junction 41 formed over most of its length with a slot.

Dans le mode de réalisation de la figure 3, la surface 2 comporte une troisième zone de rayonnement 53 séparée de la zone 51 par une jonction 42 également formée sur la plupart de sa longueur par une fente. Les extrémités de la jonction 42 comportent des moyens de découplage 421 et 422 formant également liaison mécanique entre les zones 51 et 53. Le fonctionnement des moyens de découplage 421 et 422 est décrit plus en détail dans la suite de la présente description.In the embodiment of the figure 3 the surface 2 comprises a third radiation zone 53 separated from the zone 51 by a junction 42 also formed over most of its length by a slot. The ends of the junction 42 comprise decoupling means 421 and 422 also forming a mechanical connection between the zones 51 and 53. The operation of the decoupling means 421 and 422 is described in more detail later in the present description.

La jonction 41 entre la zone 51 et la zone 52 comporte un commutateur actif symétrique 60 décrit plus en détail dans la suite de la présente description. La jonction 41 comporte également une inductance 70 branchée entre une borne 71 située sur la zone 53 et une borne 72 située sur la zone 52.The junction 41 between the zone 51 and the zone 52 comprises a symmetrical active switch 60 described in more detail in the remainder of this description. The junction 41 also comprises an inductor 70 connected between a terminal 71 located on the zone 53 and a terminal 72 situated on the zone 52.

La zone de rayonnement 51 comporte une zone isolée 4. La zone isolée 4 est reliée au reste de la zone 51 grâce à trois moyens de découplage 43 situés sur trois côtés de la zone 4. La zone 4 isolée présente une aire la plus petite possible, afin de réduire le nombre de moyens de découplage 43 à mettre en place.The radiation zone 51 comprises an isolated zone 4. The isolated zone 4 is connected to the remainder of the zone 51 by three decoupling means 43 located on three sides of the zone 4. The isolated zone 4 has the smallest possible area in order to reduce the number of decoupling means 43 to put in place.

On va maintenant décrire plus précisément un montage possible pour un commutateur actif symétrique 60.We will now describe more precisely a possible assembly for a symmetrical active switch 60.

Le commutateur symétrique 60 comporte principalement deux diodes 31 et 32 montées en série en configuration tête-bêche entre une borne 40 située sur la zone isolée 4 et une borne 520 située sur la zone de rayonnement 52. Les diodes sont des diodes actives PIN.The symmetrical switch 60 mainly comprises two diodes 31 and 32 connected in series in a back-to-back configuration between a terminal 40 located on the insulated zone 4 and a terminal 520 located on the radiation zone 52. The diodes are active diodes PIN.

Dans l'ensemble de la présente description, on appelle configuration « tête-bêche » une configuration dans laquelle les diodes sont branchées en série symétriquement par rapport à une borne centrale 65 située au milieu des deux diodes 31 et 32.Throughout the present description, a configuration called "head-to-tail" is a configuration in which the diodes are connected. in series symmetrically with respect to a central terminal 65 located in the middle of the two diodes 31 and 32.

Dans les modes de réalisation des figures 3 à 7, le point commun central 65 aux diodes 31 et 32 est la cathode de chaque diode.In the embodiments of Figures 3 to 7 the central common point 65 to the diodes 31 and 32 is the cathode of each diode.

Le commutateur 60 comporte de plus des composants 62 et 63 de symétrisation assurant la symétrie électrique du commutateur pour les courants de radiofréquences.The switch 60 further comprises symmetry components 62 and 63 providing electrical symmetry of the switch for radio frequency currents.

Une explication permettant de comprendre le fonctionnement des diodes tête-bêche en faisant abstraction du système de polarisation est la suivante. Pour l'alternance positive du courant RF, la diode 31 est par exemple passante et la diode 32 est bloquée. Pour l'alternance négative, la diode 31 est bloquée et la diode 32 est passante. La non linéarité des diodes est présente, et pour que la forme d'onde soit la plus "sinusoïdale" possible, il est impératif que le comportement dynamique RF soit strictement identique sur l'alternance positive et négative. En prenant en compte les composants de polarisation (notamment une inductance 61) des diodes tête-bêche 31 et 32 dans une antenne, il faut donc ajouter des éléments RF qui ne sont là que pour rendre le montage symétrique d'un point de vue RF, pour les alternances positives et négatives. Il s'agit des composants 62 et 63 de symétrisation.An explanation for understanding the operation of the diodes back-to-back disregarding the polarization system is as follows. For the positive alternation of the RF current, the diode 31 is for example conducting and the diode 32 is blocked. For the negative half-wave, the diode 31 is blocked and the diode 32 is on. The non-linearity of the diodes is present, and for the waveform to be the most "sinusoidal" possible, it is imperative that the dynamic behavior RF is strictly identical on the positive and negative alternation. Taking into account the polarization components (including an inductance 61) of the diodes back and forth 31 and 32 in an antenna, it is necessary to add RF elements which are only there to make the mounting symmetric from an RF point of view , for positive and negative alternations. These are the components 62 and 63 of symmetrization.

Le commutateur 60 comporte en effet une première inductance 61 branchée d'une part entre une borne 66 située sur la zone de rayonnement 51 (non sur la zone isolée 4) et d'autre part la borne centrale 65 située entre les deux diodes 31 et 32.The switch 60 comprises a first inductor 61 connected on the one hand between a terminal 66 located on the radiation zone 51 (not on the isolated zone 4) and on the other hand the central terminal 65 located between the two diodes 31 and 32.

Ainsi, les composants de symétrisation comportent une deuxième inductance 62 de même valeur que la première inductance 61, pour compenser exactement le comportement RF pour les alternances positives et négatives dû à l'inductance 61. La deuxième inductance 62 est branchée en série avec un condensateur 63. Le condensateur 63 a une impédance très faible pour les courants de radiofréquences et une impédance très élevée pour les courants continus ou ayant une faible fréquence. Il est donc transparent pour les courants de radiofréquences, et aucun courant continu ne peut traverser l'inductance 62. La deuxième inductance 62 et le condensateur 63 de symétrisation sont branchés entre une borne 67 située sur la zone de rayonnement 52 et la borne centrale 65.Thus, the balancing components comprise a second inductor 62 of the same value as the first inductance 61, to compensate exactly the RF behavior for the positive and negative half-waves due to the inductance 61. The second inductor 62 is connected in series with a capacitor 63. Capacitor 63 has a very low impedance for radio frequency currents and a very high impedance for DC currents or low frequency currents. It is therefore transparent for the radio frequency currents, and no direct current can pass through the inductor 62. The second inductor 62 and the symmetrizing capacitor 63 are connected between a terminal 67 located on the radiation zone 52 and the central terminal 65.

Un tel montage permet la commutation du commutateur actif 60 avec une génération d'harmoniques conforme aux normes, du fait de la symétrie du commutateur 60 pour les courants de radiofréquences.Such an arrangement allows switching of the active switch 60 with harmonics generation according to the standards, because of the symmetry of the switch 60 for the radio frequency currents.

Par exemple, les inductances 61, 62 ont une valeur de 33 nH et le condensateur 63 a une valeur de 22 pF.For example, the inductances 61, 62 have a value of 33 nH and the capacitor 63 has a value of 22 pF.

Le commutateur 60 comporte également au moins une inductance 64 branchée en parallèle des deux diodes 31 et 32. L'inductance 64 est branchée entre une borne 68 située sur la zone isolée 4 et une borne 69 située sur la zone 52.The switch 60 also comprises at least one inductor 64 connected in parallel with the two diodes 31 and 32. The inductor 64 is connected between a terminal 68 located on the insulated zone 4 and a terminal 69 situated on the zone 52.

La commande des diodes 31 et 32 se fait grâce à la commande C. Le courant de commande du commutateur 60 arrive à l'antenne et au commutateur 60 par le point d'attaque A. Il passe ensuite dans l'inductance 61 (pas dans l'inductance 62 du fait de la présence du condensateur 63) avant de se diviser en deux parties. Une première partie passe dans la diode 31, la zone 4, l'inductance 64 et rejoint le point G par l'inductance 70. La deuxième partie du courant de commande continu issu de l'inductance 61 passe par la diode 32 et rejoint le point G en passant par l'inductance 70.The control of the diodes 31 and 32 is done by means of the command C. The control current of the switch 60 reaches the antenna and the switch 60 via the point of attack A. It then passes into the inductor 61 (not in the inductor 62 due to the presence of the capacitor 63) before dividing into two parts. A first part passes through the diode 31, the zone 4, the inductor 64 and joins the point G by the inductor 70. The second part of the continuous control current coming from the inductor 61 passes through the diode 32 and joins the point G through the inductor 70.

L'antenne selon la figure 3 peut commuter entre deux bandes de fréquences, en fonction de la commande du commutateur 60 décrite ci-dessus.The antenna according to the figure 3 can switch between two frequency bands, depending on the control of the switch 60 described above.

Une première bande de fréquences est atteinte lorsque les diodes 31 et 32 sont bloquées. Un courant de radiofréquences if1 circule sur la périphérie (il s'agit bien entendu des endroits où la densité de courant est la plus forte) d'une première zone de rayonnement constituée des zones de rayonnement 51 et 53 comme le montre le trait plein. Le courant if1 passe par la zone isolée 4, puisque les condensateurs 43 sont transparents pour les radiofréquences. On rappelle que la longueur d'onde de résonance d'une antenne patch est fonction notamment du périmètre de la surface de rayonnement.A first frequency band is reached when the diodes 31 and 32 are blocked. A radiofrequency current if1 flows on the periphery (it is of course the places where the current density is highest) of a first radiation zone constituted by the radiation zones 51 and 53 as shown by the solid line. Current if1 passes through insulated area 4, since capacitors 43 are transparent for radio frequencies. It is recalled that the resonance wavelength of a patch antenna depends in particular on the perimeter of the radiation surface.

Les moyens de découplage 421 et 422 sont aptes à empêcher le passage d'un courant continu (par exemple un courant de commande) du point A directement vers le point G. Comme le montre la figure 3, les moyens 421 et 422 permettent en outre la circulation du courant de radiofréquences if1 sur la périphérie des zones 51 et 53 notamment. Les moyens 421 et 422 sont transparents pour les courants de radiofréquences. Préférentiellement, les moyens 421 et 422 comportent des condensateurs de découplage GSM et/ou DCS et/ou UMTS. Les capacités sont typiquement de l'ordre de 22 picofarads. Dans la suite de la présente description, tous les condensateurs de découplage ont une capacité de cet ordre de grandeur.The decoupling means 421 and 422 are able to prevent the passage of a direct current (for example a control current) from the point A directly to point G. As shown in figure 3 , the means 421 and 422 further enable the flow of radiofrequency current if1 on the periphery of the zones 51 and 53 in particular. The means 421 and 422 are transparent for the radio frequency currents. Preferably, the means 421 and 422 comprise decoupling capacitors GSM and / or DCS and / or UMTS. The capacities are typically of the order of 22 picofarads. In the remainder of the present description, all the decoupling capacitors have a capacity of this order of magnitude.

On définit donc grâce aux moyens 421 et 422 deux chemins différents pour un courant continu et pour un courant de radiofréquences.Thus, means 421 and 422 define two different paths for a direct current and for a radio frequency current.

On représente par des traits pointillés le chemin du courant de radiofréquences if2 dans le cas où les diodes 31 et 32 sont passantes. On définit alors une autre fréquence de résonance du fait du trajet du courant if2 entre les points A et G. Encore une fois, les moyens 421 et 422 sont importants pour forcer le passage du courant de commande du point A à travers l'inductance 61 et les diodes 31 et 32. Le condensateur 63 évite quant à lui le passage du courant de commande dans l'inductance 62 au lieu des diodes 31 et 32. Les moyens 421 et 422 ainsi que le condensateur 63 permettent le passage du courant de radiofréquences selon les traits pointillés sur la périphérie des zones 51, 52 et 53.Dashed lines show the path of the radio frequency current if2 in the case where the diodes 31 and 32 are on. Another resonant frequency is then defined because of the current path if2 between the points A and G. Once again, the means 421 and 422 are important for forcing the passage of the control current from the point A through the inductance 61. and the diodes 31 and 32. The capacitor 63 for its part avoids the passage of the control current in the inductance 62 instead of the diodes 31 and 32. The means 421 and 422 and the capacitor 63 allow the passage of the radiofrequency current according to the dotted lines on the periphery of zones 51, 52 and 53.

On comprend qu'en adaptant les tailles des zones de rayonnement 51, 52 et 53, et/ou en ajoutant des fentes sur l'une quelconque des zones de rayonnement, on peut modifier la valeur des fréquences de rayonnement f1 et f2 selon les applications souhaitées.It is understood that by adapting the sizes of the radiation zones 51, 52 and 53, and / or by adding slots on any of the radiation zones, the value of the radiation frequencies f 1 and f 2 can be varied according to the applications desired.

Avantageusement les deux bandes de fréquences sont choisies parmi les bandes suivantes.

  • une bande de fréquences aux alentours de 900 MHz, de préférence celle du système mondial de communications mobiles (GSM), notamment de 823 MHz à 960 MHz ;
  • une bande de fréquences aux alentours de 1800 MHz, de préférence celle du système DCS 1800 ou « Digital Communication System 1800 MHz », notamment de 1710 MHz à 1990 MHz ;
  • une bande de fréquences aux alentours de 2000 MHz, de préférence celle du système universel de télécommunication avec les mobiles (UMTS), notamment 1920 et 2170 MHz.
Advantageously, the two frequency bands are chosen from the following bands.
  • a frequency band around 900 MHz, preferably that of the global mobile communications system (GSM), in particular from 823 MHz to 960 MHz;
  • a frequency band around 1800 MHz, preferably that of the DCS 1800 or "Digital Communication System 1800 MHz" system, in particular from 1710 MHz to 1990 MHz;
  • a frequency band around 2000 MHz, preferably that of the universal mobile telecommunication system (UMTS), in particular 1920 and 2170 MHz.

La figure 8A est une variante de montage de la figure 3. Selon cette variante, le montage consiste à utiliser une antenne multicouche. Le courant continu de commande du commutateur symétrique circule sur une couche ou l'autre de l'antenne. Le courant RF ignore quant à lui les deux couches en n'en voyant qu'une seule, compte tenu du couplage très fort des couches (surfaces proches en vis à vis).The figure 8A is a mounting variant of the figure 3 . According to this variant, the assembly consists in using a multilayer antenna. The direct control current of the symmetrical switch flows on one or the other layer of the antenna. The RF current ignores the two layers by seeing only one, given the very strong coupling layers (close surfaces facing).

Grâce au montage de la figure 8A, il est possible de supprimer une inductance (l'équivalent de l'inductance 70 sur le montage de la figure 3) et trois condensateurs (les équivalents des condensateurs 43 sur le montage de la figure 3). On supprime également la nécessité d'avoir une zone isolée (équivalent de la zone isolée 4 du montage de la figure 3). Les autres éléments du montage restent identiques à ceux décrits en référence à la figure 3. Il faut cependant noter que sur le montage de la figure 8A, la borne centrale 65 aux diodes 31 et 32 est l'anode de chaque diode. Les diodes 31 et 32 sont cependant placées tête-bêche.Thanks to the assembly of the figure 8A , it is possible to suppress an inductance (the equivalent of the inductance 70 on the assembly of the figure 3 ) and three capacitors (the equivalents of the capacitors 43 on the assembly of the figure 3 ). It also removes the need to have an isolated area (equivalent to the isolated area 4 of the assembly of the figure 3 ). The other elements of the assembly remain identical to those described with reference to the figure 3 . It should be noted, however, that on the assembly of the figure 8A , the central terminal 65 to the diodes 31 and 32 is the anode of each diode. The diodes 31 and 32, however, are placed head to tail.

La figure 8B montre que les éléments portant une croix (point A, périphérie des zones 51 et 53 et inductance 61) sont reliés entre eux sur une couche, et les éléments portant un trait (point G, périphérie des zones 51 et 53, inductance 64 et diode 31) sont reliés entre eux sur une autre couche. La présence de condensateurs de découplage (43 sur la figure 3) n'est pas utile, car on rappelle qu'on utilise une antenne constituée de deux couches isolées reliées par des interconnexions (circuit imprimé à deux couches, rigide ou souple par exemple).The Figure 8B shows that the elements carrying a cross (point A, periphery of the zones 51 and 53 and inductance 61) are connected to each other on a layer, and the elements bearing a line (point G, periphery of the zones 51 and 53, inductance 64 and diode 31) are connected to each other on another layer. The presence of decoupling capacitors (43 on the figure 3 ) is not useful, because it is recalled that uses an antenna consisting of two isolated layers connected by interconnections (printed circuit with two layers, rigid or flexible for example).

L'utilisation d'une antenne multicouche s'applique également dans d'autres cas particuliers, dès lors qu'il n'y a qu'un seul commutateur symétrique et suivant l'emplacement du commutateur.The use of a multilayer antenna is also applicable in other special cases, since there is only one symmetrical switch and depending on the location of the switch.

La figure 4 montre schématiquement un deuxième mode de réalisation d'une antenne selon l'invention comportant deux commutateurs actifs 60 symétriques.The figure 4 schematically shows a second embodiment of an antenna according to the invention comprising two symmetrical active switches 60.

L'antenne comporte ainsi une première zone de rayonnement 52 comportant un point de mise à la masse G et éventuellement une fente indiquée par 6.The antenna thus comprises a first radiation zone 52 comprising a grounding point G and possibly a slot indicated by 6.

L'antenne comporte également une zone de rayonnement 51 comportant une zone isolée 4 reliée au reste de la zone 51 par des moyens de découplage 43 préférentiellement comportant des condensateurs de découplage GSM et/ou DCS et/ou UMTS (la zone 4 isolée présente une aire préférentiellement la plus petite possible pour éviter la multiplication des moyens de découplage 43).The antenna also comprises a radiation zone 51 comprising an isolated zone 4 connected to the remainder of the zone 51 by decoupling means 43 preferably comprising GSM and / or DCS and / or UMTS decoupling capacitors (the isolated zone 4 has an preferentially the smallest possible area to avoid the multiplication of decoupling means 43).

La zone 51 comporte un point A' relié à une commande C. Un condensateur 74 est relié entre le point A' et la masse. Le point A' est un point de contrôle des diodes 31 et 32 et un point de masse pour le courant RF car il est relié à la masse par un condensateur 74.The zone 51 has a point A 'connected to a control C. A capacitor 74 is connected between the point A' and the ground. The point A 'is a control point of the diodes 31 and 32 and a ground point for the RF current because it is connected to ground by a capacitor 74.

La zone 51 est reliée sur un de ses côtés à la zone de rayonnement 52 par des moyens de découplage 411 et 412, préférentiellement comportant des condensateurs de découplage GSM et/ou DCS et/ou UMTS.The zone 51 is connected on one of its sides to the radiation zone 52 by decoupling means 411 and 412, preferably comprising decoupling capacitors GSM and / or DCS and / or UMTS.

La zone 51 est également reliée à la zone 52 sur un autre de ses côtés comportant la zone isolée 4 par l'intermédiaire d'un commutateur 60 symétrique identique à celui de la figure 3.The zone 51 is also connected to the zone 52 on another of its sides comprising the insulated zone 4 by means of a symmetrical switch 60 identical to that of the figure 3 .

Le commutateur symétrique 60 comporte principalement deux diodes 31 et 32 montées en série en configuration tête bêche entre une borne 40 située sur la zone isolée 4 et une borne 520 située sur la zone de rayonnement 52.The symmetrical switch 60 comprises mainly two diodes 31 and 32 connected in series in a head-to-tail configuration between a terminal 40 situated on the insulated zone 4 and a terminal 520 situated on the radiation zone 52.

Le commutateur 60 comporte de plus des composants 62 et 63 de symétrisation assurant la symétrie électrique du commutateur pour les courants de radiofréquences.The switch 60 further comprises symmetry components 62 and 63 providing electrical symmetry of the switch for radio frequency currents.

Le commutateur 60 comporte une première inductance 61 branchée d'une part entre la borne 66 située sur la zone de rayonnement 51 (non située sur la zone isolée 4) et d'autre part une borne centrale 65 située entre les deux diodes 31 et 32.The switch 60 comprises a first inductor 61 connected on the one hand between the terminal 66 located on the radiation zone 51 (not located on the isolated zone 4) and on the other hand a central terminal 65 located between the two diodes 31 and 32 .

Le commutateur 60 comporte de plus les composants 62 et 63 de symétrisation assurant la symétrie électrique du commutateur pour les radiofréquences. Les composants de symétrisation comportent ainsi une deuxième inductance 62 de même valeur que la première inductance 61. La deuxième inductance 62 est branchée en série avec un condensateur 63 empêchant le passage des courants continus dans l'inductance 62, mais permettant de compenser l'effet de l'inductance 61 pour les alternances positives et négatives des courants de radiofréquences. La deuxième inductance 62 et le condensateur de symétrisation 63 sont branchés entre une borne 67 située sur la zone de rayonnement 52 et la borne centrale 65.The switch 60 further comprises the symmetry components 62 and 63 providing the electrical symmetry of the switch for the radio frequencies. The balancing components thus comprise a second inductor 62 of the same value as the first inductor 61. The second inductor 62 is connected in series with a capacitor 63 preventing the passage of DC currents in inductance 62, but making it possible to compensate the effect inductance 61 for the positive and negative half-waves of the radio frequency currents. The second inductor 62 and the balancing capacitor 63 are connected between a terminal 67 located on the radiation zone 52 and the central terminal 65.

Le commutateur 60 comporte également au moins une inductance 64 branchée en parallèle des deux diodes 31 et 32. L'inductance 64 est branchée entre une borne 68 située sur la zone isolée 4 et une borne 69 située sur la zone 52.The switch 60 also comprises at least one inductor 64 connected in parallel with the two diodes 31 and 32. The inductor 64 is connected between a terminal 68 located on the insulated zone 4 and a terminal 69 situated on the zone 52.

L'antenne comporte également une zone de rayonnement 53 comportant une zone isolée 5 reliée au reste de la zone de rayonnement par des moyens de découplage 531 (la zone 5 isolée présente également une aire la plus petite possible).The antenna also comprises a radiation zone 53 comprising an isolated zone 5 connected to the remainder of the radiation zone by decoupling means 531 (the isolated zone 5 also has a smaller possible area).

La zone 53 comporte un point d'attaque ou de liaison A. Le point d'attaque A est relié à une électronique d'émission/réception des signaux radiofréquences RF ainsi qu'à une électronique de contrôle C par le point de liaison A. A est effectivement le point d'attaque RF (point d'entrée de l'antenne). Un condensateur 73 est branché entre l'électronique d'émission/réception des signaux radiofréquences et le point de liaison A.The zone 53 has a point of attack or connection A. The point of attack A is connected to an electronic transmission / reception of RF radio frequency signals as well as a control electronics C by the point of connection A. A is actually the RF point of attack (point of entry of the antenna). A capacitor 73 is connected between the transmission / reception electronics of the radio frequency signals and the connection point A.

La zone 53 est reliée à la zone 51 par des moyens de découplage 421 et 422, préférentiellement comportant des condensateurs de découplage GSM et/ou DCS et/ou UMTS.The zone 53 is connected to the zone 51 by decoupling means 421 and 422, preferably comprising decoupling capacitors GSM and / or DCS and / or UMTS.

La zone 53 est par ailleurs reliée à la zone 52 par un commutateur 60 symétrique.The zone 53 is also connected to the zone 52 by a symmetrical switch 60.

Les diodes 31 et 32 du commutateur 60 sont en configuration tête bêche entre une borne 510 située sur la zone isolée 5 et une borne 522 située sur la zone 52. Une inductance 61 est branchée entre d'une part une borne 530 située sur la zone 53 (non sur la zone isolée 5) et la borne centrale 65, tandis que les composants de symétrisation (comportant comme précédemment une inductance 62 branchée en série d'un condensateur 63) sont branchés entre la borne 65 et une borne 521 situées sur la zone 52. Une inductance 64 est branchée entre une borne 511 située sur la zone isolée 5 et une borne 523 située sur la zone 52.The diodes 31 and 32 of the switch 60 are in head-to-tail configuration between a terminal 510 situated on the insulated zone 5 and a terminal 522 located on the zone 52. An inductor 61 is connected between on the one hand a terminal 530 located on the zone 53 (not on the insulated area 5) and the central terminal 65, while the symmetrization components (having as before an inductance 62 connected in series of a capacitor 63) are connected between the terminal 65 and a terminal 521 located on the zone 52. An inductor 64 is connected between a terminal 511 located on the insulated zone 5 and a terminal 523 situated on the zone 52.

La figure 6 représente le chemin du courant de commande entre le point A' relié à la commande C de la figure 4 et le point de mise à la masse G pour faire passer le commutateur de l'état bloqué à l'état passant.The figure 6 represents the path of the control current between the point A 'connected to the control C of the figure 4 and the grounding point G to switch the switch from the off state to the on state.

On constate que le courant de commande des diodes 31 et 32 passe sur la périphérie de la zone 51, les moyens 411 et 412 jouant leur rôle de découplage pour éviter le passage du courant directement du point A' au point G sans passer par les diodes 31 et 32. Les moyens 421 et 422 évitent quant à eux le passage du courant de la zone 51 à la zone 53. Une fois que le courant passe dans l'inductance 61, il passe par les diodes 31 et 32. Le condensateur 63 empêche le courant de commande de passer par l'inductance 62. Le courant passant par la diode 31 passe également par la zone isolée 4 avant de passer par l'inductance 64 pour rejoindre le point G de la zone 52. Le courant passant par la diode 32 passe directement par la zone 52 avant de rejoindre le point G.It can be seen that the control current of the diodes 31 and 32 passes over the periphery of the zone 51, the means 411 and 412 playing their decoupling role in order to prevent the current from passing directly from the point A 'to the point G without passing through the diodes. 31 and 32. The means 421 and 422 avoid the passage of the current from the zone 51 to the zone 53. Once the current passes in the inductance 61, it passes through the diodes 31 and 32. The capacitor 63 prevents the control current from passing through the inductor 62. The current passing through the diode 31 also passes through the insulated zone 4 before passing through the inductor 64 to join the point G of the zone 52. The current passing through the diode 32 passes directly through zone 52 before joining point G.

La borne centrale 65 de la configuration tête-bêche des diodes 31, 32 est reliée au point A' de commande des diodes 31 et 32 et de mise à la masse pour les courants RF - par l'intermédiaire de l'inductance 61 sur la borne 66, l'inductance 61 Les diodes 31 et 32 sont reliées au point G de mise à la masse - la diode 31 par l'intermédiaire de l'inductance 64 sur la borne 69 et la diode 32 sur la borne 520. On rappelle que les inductances 61 et 64 ont des valeurs faibles pour les courants de commande et de polarisation des diodes 31 et 32. Ainsi pour le courant de commande continu les diodes 31 et 32 sont branchées en parallèle.The central terminal 65 of the back-to-back configuration of the diodes 31, 32 is connected to the control point A 'of the diodes 31 and 32 and to the grounding for the RF currents - via the inductor 61 on the terminal 66, the inductor 61 The diodes 31 and 32 are connected to the grounding point G - the diode 31 via the inductor 64 on the terminal 69 and the diode 32 on the terminal 520. Recall that the inductances 61 and 64 have low values for the control and bias currents of the diodes 31 and 32. Thus for the DC control current the diodes 31 and 32 are connected in parallel.

On comprend qu'un sens de parcours est identique dans le deuxième commutateur 60 entre le point A et le point G, ainsi que dans tous les commutateurs présentés dans la présente description.It will be understood that a direction of travel is identical in the second switch 60 between the point A and the point G, as well as in all the switches presented in the present description.

La figure 7 montre schématiquement que lorsque les deux commutateurs 60 sont dans un état non passant (diodes 31 et 32 bloquées), alors on définit une première fréquence de résonance f1 grâce au trajet d'un courant if1 sur la périphérie des zones 53, 51 et 52 comme le montre le trait plein.The figure 7 shows schematically that when the two switches 60 are in a non-conducting state (diodes 31 and 32 blocked), then a first resonant frequency f1 is defined by to the path of a current if1 on the periphery of the zones 53, 51 and 52 as shown by the solid line.

Lorsque le commutateur 60 entre la zone 51 et 52 est en mode passant et le commutateur 60 entre la zone 53 et la zone 52 est bloqué, on définit une fréquence f2 grâce au parcours du courant if2 représenté en trait mixte. Le courant de radiofréquences if2 passe par les diodes 31 et 32 du commutateur passant et sur la périphérie des zones 53, 51 et 52.When the switch 60 between the zone 51 and 52 is in the on mode and the switch 60 between the zone 53 and the zone 52 is blocked, a frequency f 2 is defined by the flow of the current i.sub.2 shown in phantom. The radiofrequency current if2 passes through the diodes 31 and 32 of the on-switch and on the periphery of the zones 53, 51 and 52.

Lorsque le commutateur symétrique 60 entre la zone 51 à 52 est en état bloqué et que le commutateur 60 entre la zone 53 et la zone 52 est passant, on définit alors une troisième fréquence f3 grâce au parcours du courant if3 représenté en pointillés. if3 passe par les diodes 31 et 32 du commutateur passant sur la périphérie des zones 53, 51 et 52.When the symmetrical switch 60 between the zone 51 to 52 is in the off state and the switch 60 between the zone 53 and the zone 52 is conducting, then a third frequency f 3 is defined by the current flow if 3 shown in dotted lines. if3 passes through the diodes 31 and 32 of the switch passing on the periphery of the zones 53, 51 and 52.

Avantageusement une bande de fréquences est aux alentours de 900 MHz, de préférence celle du système mondial de communications mobiles (GSM), notamment de 823 MHz à 960 MHz, une bande de fréquences est aux alentours de 1800 MHz, de préférence celle du système DCS 1800 ou « Digital Communication System 1800 MHz », notamment de 1710 MHz à 1990 MHz et une bande de fréquences est aux alentours de 2000 MHz, de préférence celle du système universel de télécommunication avec les mobiles (UMTS), notamment 1920 et 2170 MHz.Advantageously, a frequency band is around 900 MHz, preferably that of the global system of mobile communications (GSM), in particular from 823 MHz to 960 MHz, a frequency band is around 1800 MHz, preferably that of the DCS system. 1800 or "Digital Communication System 1800 MHz", in particular from 1710 MHz to 1990 MHz and a frequency band is around 2000 MHz, preferably that of the universal system of telecommunications with mobiles (UMTS), in particular 1920 and 2170 MHz.

La figure 5 montre un troisième mode de réalisation comportant deux commutateurs symétriques entre d'une part une zone 51 et une zone 52 et d'autre part une zone 53 et la zone 52.The figure 5 shows a third embodiment comprising two symmetrical switches between on the one hand a zone 51 and a zone 52 and on the other hand a zone 53 and the zone 52.

Le point G de mise à la masse est situé sur une zone centrale 54 reliée aux zones 51 et 53 par des moyens de découplage 431, 432, 441, 442 comportant préférentiellement des condensateurs de découplage GSM et/ou DCS et/ou UMTS. La zone 54 est reliée à la zone 52 par l'intermédiaire d'une inductance 70 entre une borne 71 sur la zone 54 et une borne 72 sur la zone 52.The point G of grounding is located on a central zone 54 connected to the zones 51 and 53 by decoupling means 431, 432, 441, 442 preferably comprising decoupling capacitors GSM and / or DCS and / or UMTS. The zone 54 is connected to the zone 52 via an inductance 70 between a terminal 71 on the zone 54 and a terminal 72 on the zone 52.

Pour des raisons de clarté, la description et le fonctionnement des éléments de ce mode de réalisation ne seront pas repris, étant entendu qu'ils sont identiques à ceux décrits dans la description correspondant aux figures 3 et 4.For the sake of clarity, the description and operation of the elements of this embodiment will not be repeated, it being understood that they are identical to those described in the description corresponding to the Figures 3 and 4 .

De même que pour le mode de réalisation de la figure 4, l'antenne de la figure 5 permet de commuter entre trois bandes de fréquences : une bande de fréquences est aux alentours de 900 MHz, de préférence celle du système mondial de communications mobiles (GSM), notamment de 823 MHz à 960 MHz, une bande de fréquences est aux alentours de 1800 MHz, de préférence celle du système DCS 1800 ou « Digital Communication System 1800 MHz », notamment de 1710 MHz à 1990 MHz et une bande de fréquences est aux alentours de 2000 MHz, de préférence celle du système universel de télécommunication avec les mobiles, notamment 1920 et 2170 MHz.As for the embodiment of the figure 4 , the antenna of the figure 5 allows to switch between three frequency bands: a frequency band is around 900 MHz, preferably that of the global system of mobile communications (GSM), including 823 MHz to 960 MHz, a frequency band is around 1800 MHz, preferably that of the DCS 1800 or "Digital Communication System 1800 MHz" system, in particular from 1710 MHz to 1990 MHz and a frequency band is around 2000 MHz, preferably that of the universal mobile telecommunication system, in particular 1920 and 2170 MHz.

Claims (10)

  1. A transmission/reception antenna comprising a ground plane (1) and at least one plane radiation surface (2), which extends in front of said ground plane and essentially parallel to it, wherein the radiation surface (2) is divided into at least two radiation zones (51, 52) that are separated by junctions (41, 42) comprising switches that are capable of bringing in resonance all of the radiation surface by electrically connecting all of the radiation zones (51, 52), and capable of bringing in resonance part of the radiation surface by electrically connecting part of the radiation zones (51, 52), characterized in that at least one symmetrical switch (60) comprises two active diodes (31, 32) directly connected in a head-to-tail configuration between a first radiation zone (51) and a second radiation zone (52) of the at least two radiation zones and passive symmetrization components (62, 63) ensuring the electrical symmetry of the switch (60) for the radio frequency currents, wherein the switch comprises a first inductor (61) connected between, on the one hand, the first radiation zone and, on the other hand, a central terminal (65) arranged between the two directly connected head-to-tail diodes (31, 32), wherein the components (62, 63) comprise a second inductor (62) having the same value as the first inductor (61) connected in series with a capacitor (63), wherein the second inductor (62) and the capacitor are connected between, on the one hand, the second radiation zone and, on the other hand, the central terminal (65).
  2. The antenna according to the previous claim, wherein the symmetrical switch (60) comprises at least one inductor (64) connected in parallel to the two head-to-tail diodes.
  3. The antenna according to one of the previous claims, comprising at least three radiation zones (51, 52, 53).
  4. The antenna according to one of the previous claims, wherein a frequency band is around 900 MHz, preferably that of the Global System for Mobile communication (GSM), in particular from 823 to 960 MHz, and/or a frequency band is around 1800 MHz, preferably that of the DCS 1800 system or "Digital Communication System (DCS) 1800 MHz", in particular from 1710 MHz to 1990 MHz, and/or a frequency band is around 2000 MHz, preferably that of the Universal Mobile Telecommunication System (UMTS), in particular 1920 and 2170 MHz.
  5. The antenna according to one of the previous claims, comprising decoupling means (43, 411, 412, 421, 422, 431, 432, 441, 442, 531) coupled between the at least two radiation zones (51, 52) comprising GSM and/or DCS and/or UMTS decoupling capacitors.
  6. The antenna according to one of the previous claims, wherein the plane radiation surface comprises a grounding point (G) and at least one attack point (A, A') or radio frequency (RF) current grounding point, the continuous control current of the symmetrical switch (60) coming in at the antenna via the attack or RF current grounding point, a central terminal (65) of the head-to-tail configuration of the diodes (31, 32) being connected to the attack point or RF current grounding point and the terminals of the diodes (31, 32) opposite the central terminal (65) being connected to the grounding point (G), so that said diodes are connected in parallel for the control current.
  7. The antenna according to one of the previous claims, wherein the radiation zones comprise multilayer plates.
  8. A mobile telephone, characterized in that it comprises an antenna according to one of the previous claims.
  9. A method of manufacturing a transmission/reception antenna comprising a ground plane (1) and at least one plane radiation surface (2), which extends in front of said ground plane and parallel to it, wherein the radiation surface (2) is divided into at least two radiation zones (51, 52) that are separated by junctions (41, 42) comprising switches (60) that are capable of bringing in resonance all of the radiation surface by electrically connecting all of the radiation zones (51, 52), and capable of bringing in resonance part of the radiation surface by electrically connecting part of the radiation zones (51, 52), characterized in that it comprises the steps consisting in:
    - arranging two active diodes (31, 32) directly connected in a head-to-tail configuration in at least one symmetrical switch (60) between a first radiation zone (51) and a second radiation zone (52) of the at least two radiation zones; and
    - arranging in said symmetrical switch passive symmetrization components (62, 63) ensuring the electrical symmetry of the switch (60) for the radio frequency currents, wherein the switch comprises a first inductor (61) connected between, on the one hand, the first radiation zone and, on the other hand, a central terminal (65) arranged between the two directly connected head-to-tail diodes (31, 32), wherein the components (62, 63) comprise a second inductor (62) having the same value as the first inductor (61) connected in series with a capacitor (63), wherein the second inductor (62) and the capacitor (63) are connected between, on the one hand, the second radiation zone (52) and, on the other hand, the central terminal (65).
  10. The method according the previous claim, comprising a step consisting in arranging radiation zones, so that a frequency band is around 900 MHz, preferably that of the Global System for Mobile communication (GSM), in particular from 823 MHz to 960 MHz, and/or a frequency band is around 1800 MHz, preferably that of the DCS 1800 system or "Digital Communication System (DCS) 1800 MHz", in particular from 1710 MHz to 1990 MHz, and/or a frequency band is around 2000 MHz, preferably that of the Universal Mobile Telecommunication System (UMTS), in particular 1920 and 2170 MHz.
EP06110781.9A 2005-03-07 2006-03-07 Antenna composed of planar surfaces connected by switching circuits Ceased EP1715597B1 (en)

Applications Claiming Priority (1)

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FR0502246A FR2882874B1 (en) 2005-03-07 2005-03-07 ANTENNA WITH FLAT RADIANT SURFACES WITH SWITCHABLE CIRCUIT

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EP1715597A3 EP1715597A3 (en) 2007-04-11
EP1715597B1 true EP1715597B1 (en) 2016-03-02

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JPH06291696A (en) * 1993-03-30 1994-10-18 Sony Corp Antenna sharing unit
GB2335798B (en) * 1998-03-26 2003-01-29 Nec Technologies Enhanced bandwidth antennas
US6169523B1 (en) * 1999-01-13 2001-01-02 George Ploussios Electronically tuned helix radiator choke
FR2812766B1 (en) * 2000-08-01 2006-10-06 Sagem ANTENNA WITH SURFACE (S) RADIANT (S) PLANE (S) AND PORTABLE TELEPHONE COMPRISING SUCH ANTENNA
US6864848B2 (en) * 2001-12-27 2005-03-08 Hrl Laboratories, Llc RF MEMs-tuned slot antenna and a method of making same

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EP1715597A2 (en) 2006-10-25
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FR2882874A1 (en) 2006-09-08

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