EP1580834B1 - System and method of dynamic control of the band-width of an antenna, associated telephone - Google Patents

System and method of dynamic control of the band-width of an antenna, associated telephone Download PDF

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Publication number
EP1580834B1
EP1580834B1 EP05102363A EP05102363A EP1580834B1 EP 1580834 B1 EP1580834 B1 EP 1580834B1 EP 05102363 A EP05102363 A EP 05102363A EP 05102363 A EP05102363 A EP 05102363A EP 1580834 B1 EP1580834 B1 EP 1580834B1
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EP
European Patent Office
Prior art keywords
switching
antenna
impedance
module
dynamic control
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EP05102363A
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German (de)
French (fr)
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EP1580834A1 (en
Inventor
Fernando Romao
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Apple Inc
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Apple Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/12Supports; Mounting means
    • H01Q1/22Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/242Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30Arrangements for providing operation on different wavebands
    • H01Q5/307Individual or coupled radiating elements, each element being fed in an unspecified way
    • H01Q5/314Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors
    • H01Q5/335Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors at the feed, e.g. for impedance matching

Definitions

  • the present invention relates to a technique for dynamically controlling the width of the bandwidth of an antenna.
  • antennas used in mobile phones suffer from miniaturization and the diversity of functions integrated in them.
  • the space available for the antennas is reduced.
  • the losses of the antenna of a mobile for which the volume of the antenna is restricted are typically at the end of the GSM band ("Global System for Mobile Communications” or global system of mobile communications) of 2 dB, and losses at the end of the DCS band ("Digital Communication System”) and PCS ("Personal Communications Services”) between 1.7 dB and 3 dB.
  • GSM Global System for Mobile Communications
  • DCS Digital Communication System
  • PCS Personal Communications Services
  • FIG. 1 An example of a known switching system within the antenna is shown schematically on the figure 1 .
  • Two switching elements for example in the form of impedances L, are placed between two radiating surfaces 1 and 2 of an antenna of a mobile telephone. Depending on the frequency of use of the antenna, the impedances L connect or not the two radiating surfaces 1 and 2 and thus switch within the antenna.
  • Other switching elements are of course known, and combine capacitors and / or diodes with inductances.
  • the quality factor Q of the components is essential.
  • the gain of the switching system of the figure 1 is -3 dBiso for an impedance L equal to 10 nh and having a quality factor Q of 80, while the gain is -4 dBiso for an impedance L equal to 10 nh and having a quality factor Q of 50.
  • Such a system thus comprises a transmitting / receiving antenna 3 connected to a transmitter / receiver module 4 in which all the digital and radio elements of a telephone are present.
  • the module 4 thus comprises a reception channel output RX of a GSM band, an output of a GSM TX transmission line, and for example an output of a reception channel RX of a DCS band and an output of TX DCS transmission chain.
  • Other bands can of course be provided in addition to the band or in replacement of the DCS band, such as a PCS band for example.
  • Switching means 41 controlled by control means 42 make it possible to switch between impedance matching circuits.
  • an RX GSM impedance matching circuit 43 is connected between the switching means 41 and the output 47
  • a GSM TX impedance matching circuit 44 is connected between the switching means 41 and the output 48
  • an RX DCS impedance matching circuit 45 is connected between the switching means 41 and the output 49
  • a TX DCS impedance matching circuit 46 is connected between the switching means 41 and the output 50. shows it figure 4 all these means are included in the transceiver module 4.
  • the output impedance of the module 4 is substantially equal to 50 ⁇ at this point.
  • Module 4 in particular the front module, depends on the antenna 3 used.
  • the switching means 41 are generally characterized at 50 ⁇ as well, which also introduces losses in the gain of the antenna 3.
  • the invention proposes to overcome at least one of the disadvantages of the prior art.
  • One of the aims of the invention is to propose a technique for controlling the bandwidth of an antenna which allows a reduction in the dimensions of the antenna while retaining acceptable performances in terms of efficiency and bandwidth.
  • One of the aims of the invention is to propose a technique for controlling the bandwidth of an antenna which makes it possible to adapt the impedances on the reception and transmission channels RX and TX when the characteristic of the antenna is too far from 50 ⁇ .
  • One of the aims of the invention is to propose a technique for controlling the bandwidth of an antenna which makes it possible to have a point at 50 ⁇ which is common to all the frequency bands.
  • one of the aims of the invention is to propose a technique for controlling the bandwidth of an antenna which makes it possible to insert a connector for an access to the standard transmitter / receiver module comprising a baseband and a radio frequency band. to an external antenna.
  • One of the aims of the invention is also to propose a technique for controlling the bandwidth of an antenna that makes it possible to define a single control point in the manufacture and during the recipe checks at the operators
  • customer application and / or front end manufacturers including a power amplifier and a switch module to manufacture standard modules independent of the customer application.
  • One of the aims of the invention is to propose a bandwidth control technique that makes it possible to adapt a transmitter / receiver module comprising a baseband and a radio frequency band from one mobile telephone to the other.
  • the invention proposes a system according to claim 1.
  • the invention also relates to a telephone and a method of implementing the system.
  • the invention particularly has the advantage of extending the bandwidth of the antenna of a mobile phone in multiband configuration.
  • the figure 3 shows a schematic diagram.
  • the inventor has realized that by associating a relatively simple impedance switching system 6 directly in series with the attack point B of a multiband antenna 3 (in the driven domain) and at the output A of a transmitter / receiver module 4, it was possible to extend the bandwidth of the antenna 3.
  • the principle is simple and makes it possible to extend the bandwidth of a multiband antenna 3 from an antenna having characteristics of insufficient bandwidth for a given application.
  • the switching system 6 placed between points A and B makes it possible to switch between at least two band modes.
  • Each band mode corresponds to a state corresponding to the series connection of an impedance between said antenna 3 and said module 4.
  • the first band mode is shown schematically at the Figure 4A .
  • the impedance between the points A and B is zero and the frequency-dependent losses diagram is for example that in solid line on the figure 5 .
  • the second band mode is shown schematically at the Figure 4B .
  • the impedance between points A and B is equal to an adaptation impedance Z and the frequency loss diagram is that in dashed lines on the figure 5 .
  • the loss diagram is shifted in the frequency domain (frequency shifting phenomenon). It is thus possible to improve the performance of the antenna 3 as a function of the frequency of use.
  • the impedance Z varies as a function of the frequency of use of the antenna 3.
  • the impedance Z is equal to a first value Z 1 for the equal frequency value f 1 and Z is a second value Z 2 for the value of equal frequency f 2 .
  • the figure 6 shows a first possible schematic example of a switching system 6.
  • the system 6 is thus mainly composed of an active switching element 61 that can be switched on or off between the module 4 and the antenna 3, the passive impedance Z being composed, for its part, of an inductor 62 mounted in a series of a capacitor 63, the inductor 62 and the capacitor 63 being connected in parallel with the active element 61 at the points A and B.
  • the active element is an active diode 61.
  • the active diode 61 is of the PIN diode type (semiconductor configuration: P-layer - intrinsic layer - n-layer).
  • the diode 61 in the off state, is equivalent to a capacitance of 0.2 pF in parallel with a resistance of 10 k ⁇ . It thus materializes an approximate infinite impedance.
  • the diode 61 In the on state, is equivalent to a resistance of 0.3 ⁇ in series with an inductance of 0.4 nh. It thus materializes an approximate short circuit.
  • the active diode 61 may be replaced by any other device capable of switching between a short circuit and an open circuit for signals of the type considered.
  • the diode 61 may be replaced by a field effect transistor, or a miniature electromechanical switch in MEMS technology ("micro-electronic mechanical system").
  • Table 1 gives examples of digital applications for values of the impedance Z A of the antenna 3 for a GSM band on the RX chain in the case of the figure 6 , the diode 61 being busy.
  • the TOS is the Stationary Wave Rate of the antenna and characterizes the distance of the characteristic of the antenna from the ideal value of 50 ⁇ . The closer the TOS is to - ⁇ , the better the antenna is.
  • Table 1 Frequency f (MHz) Impedance Z A TOS (dB) Losses (dB) 925 27 ⁇ + 2.3 nh -9.4 0.5 948 20 ⁇ + 6.5 nh -4.26 2 960 21 ⁇ + 8.8 nh -3.3 2.7
  • FIGS 7A to 7E show several possible choices for Z, the choice being made according to the different bands.
  • the Figure 7A represents a capacitance in parallel with an inductance connected in series with a capacitance
  • the Figure 7B represents a series inductance with a capacitance
  • the Figure 7C represents an inductance connected in parallel with a capacitance, the mounting being in series with an inductor
  • the Figure 7D represents a series inductance with a capacitance
  • the figure 7E represents an inductance connected in parallel with a capacitance.
  • Table 3 shows the equivalent electrical characteristics of each Z as a function of the usage band.
  • the impedance Z is equivalent to a capacitance when the antenna 3 comprises a parasitic inductive element and that Z is equivalent to an inductance when the antenna 3 comprises a parasitic capacitive element.
  • Z compensates as well always the parasitic behavior of the antenna 3 for a given frequency, so that the TOS and the losses are the lowest possible.
  • the width of the bandwidth of the antenna is thus dynamically controlled.
  • the figure 8 schematically shows a complete possible example of a switch having a switching system 6.
  • the system 6 is connected, as on the figures 3 and 6 for example, between the transmitter / receiver module 4 and the antenna 3.
  • the connection between the system 6 and the module 4 is embodied by the point 5, which is the common point at 50 ⁇ of all the frequency bands.
  • the connection between the system 6 and the antenna 3 is materialized as for it by the pole 8.
  • the telephone further comprises means 7 forming a central processor defining the switching strategy of the active element 61, preferably the active diode 61, in communication.
  • the means 7 thus comprise memory means able to store a switching program of the active diode 61 and microprocessor means for implementing the program.
  • the switching strategy of the active diode 61 is thus predefined in the switching program and depends on the frequency and the communication cycle (transmission phase, reception or monitoring).
  • the connection between the system 6 and the means 7 is effected by a pole referenced by 9.
  • the means 7 also control, through a link 68, means 41 for switching the different channels (RX, TX and monitoring) of the different GSM / DCS / PCS bands of the telephone.
  • the means 41 for switching the different channels are similar to the means referenced 41 on the figure 1 .
  • the control of the band switching means 41 is performed in synchronism with the control of the switching system 6 of the active diode 61.
  • the system 6 is also connected to the mass of the telephone thanks to the pole 10.
  • the impedance Z and the active diode 61 are connected in parallel with each other between the points A and B.
  • the point A is connected to the point 5 and the point B is connected to the point 8.
  • a capacitor 66 is connected between the pole 10 and a terminal 67 internal to the system 6.
  • a control resistor 65 is connected between the point 67 and the pole 9.
  • a choke inductor 64 is connected between point 67 and point A.
  • the control voltage of the diode arriving at the pole 9 is 3 V for the on state and 0 V for the blocked state. There is indeed no harmonic generated.
  • the switching program can set that the active diode 61 can be locked in TX as well.
  • the control voltage arriving at the pole 9 is this time 3 V for the on state and -20 / -30 V for the off state. This avoids the creation of harmonics.
  • the control signal may also be a control current.
  • the control signal arriving at the pole 9 thus controls the opening or closing of the diode 61 according to the frequency of use and the communication cycle (TX transmission, RX reception or monitoring).
  • the command is thus dynamic.
  • the switching of the diode 61 from one state to another takes place during the phases of radio inactivity of the telephone, and in a very short time (of the order of a few tens of microseconds) according to the predefined strategy in the means 7.
  • the figure 9 shows a possible embodiment of a switch according to the invention.
  • the device is similar to that of the figure 8 and items are not included for clarity.
  • the difference in the embodiment of the figure 9 compared to the example of the figure 8 is that the impedance Z is variable.
  • the value of the impedance Z is set by the control means 7 by means of a link 69.
  • the means 7 thus control the value of the impedance Z at the same time as the state of the active diode 61 for optimized use of the the antenna.
  • the invention has the advantage of allowing dynamic control of the bandwidth of the antenna through a simple device.

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Transceivers (AREA)

Description

DOMAINE TECHNIQUE GENERALGENERAL TECHNICAL FIELD

La présente invention concerne une technique de commande dynamique de la largeur de la bande passante d'une antenne.The present invention relates to a technique for dynamically controlling the width of the bandwidth of an antenna.

Plus précisément, elle concerne la commande de la largeur de la bande passante d'une antenne d'un téléphone mobile.More specifically, it relates to the control of the bandwidth width of an antenna of a mobile phone.

ETAT DE L'ARTSTATE OF THE ART

Actuellement, les antennes utilisées dans les téléphones mobiles souffrent de la miniaturisation et de la diversité des fonctions intégrées dans ceux-ci. La place disponible pour les antennes se réduit.Currently, antennas used in mobile phones suffer from miniaturization and the diversity of functions integrated in them. The space available for the antennas is reduced.

La conséquence directe de la réduction de la place disponible pour l'antenne dans un téléphone mobile est une diminution du rendement et de la bande passante de l'antenne.The direct consequence of reducing the available space for the antenna in a mobile phone is a decrease in antenna performance and bandwidth.

Face à ce problème, différentes stratégies sont actuellement mises en oeuvre par les constructeurs de téléphones mobiles.Faced with this problem, different strategies are currently being implemented by mobile phone manufacturers.

Premièrement, on peut concevoir un téléphone mobile de petite taille et se satisfaire de performances médiocres du téléphone.First, one can design a small mobile phone and be satisfied with poor phone performance.

Par exemple, les pertes de l'antenne d'un mobile pour lequel le volume de l'antenne est restreint sont typiquement en bout de bande GSM (« Global System for Mobile communications » ou système mondial de communications mobiles) de 2 dB, et les pertes en bout de bande DCS (« Digital Communication System ») et PCS (« Personal Communications Services ») comprises entre 1.7 dB et 3 dB. Ces pertes sont relativement importantes et la fréquence de résonance centrale de l'antenne d'un téléphone est choisie de façon à trouver un compromis entre les pertes en transmission et les pertes en réception.For example, the losses of the antenna of a mobile for which the volume of the antenna is restricted are typically at the end of the GSM band ("Global System for Mobile Communications" or global system of mobile communications) of 2 dB, and losses at the end of the DCS band ("Digital Communication System") and PCS ("Personal Communications Services") between 1.7 dB and 3 dB. These losses are relatively large and the central resonant frequency of the antenna of a telephone is chosen so as to find a compromise between the transmission losses and the losses in reception.

Deuxièmement, on peut renoncer à concevoir un mobile aussi petit que le voudrait le consommateur pour privilégier les performances de l'antenne.Second, we can give up designing a mobile as small as the consumer wants to focus on the performance of the antenna.

On voit clairement que ces deux premières stratégies n'apportent pas satisfaction.It is clear that these first two strategies are not satisfactory.

Troisièmement, on peut élaborer des systèmes complexes de commutation soit au sein de l'antenne, soit sur ses accès de masse dans le cas des antennes avec retour de masse - comme les antennes « patch », « PIFA (Plane Inverted F Antenna) », etc.Thirdly, we can develop complex switching systems either within the antenna or on its mass access in the case of antennas with mass feedback - such as patch antennas, "PIFA (Plane Inverted F Antenna)" etc.

Un exemple d'un système connu de commutation au sein de l'antenne est représenté schématiquement sur la figure 1.An example of a known switching system within the antenna is shown schematically on the figure 1 .

Deux éléments de commutation, par exemple sous forme d'impédances L, sont placés entre deux surfaces rayonnantes 1 et 2 d'une antenne d'un téléphone mobile. En fonction de la fréquence d'utilisation de l'antenne, les impédances L relient ou non les deux surfaces rayonnantes 1 et 2 et effectuent ainsi une commutation au sein de l'antenne. D'autres éléments de commutation sont bien entendu connus, et combinent des capacités et/ou des diodes à des inductances.Two switching elements, for example in the form of impedances L, are placed between two radiating surfaces 1 and 2 of an antenna of a mobile telephone. Depending on the frequency of use of the antenna, the impedances L connect or not the two radiating surfaces 1 and 2 and thus switch within the antenna. Other switching elements are of course known, and combine capacitors and / or diodes with inductances.

De tels systèmes de commutation au sein de l'antenne ne sont cependant pas satisfaisants.Such switching systems within the antenna, however, are not satisfactory.

En effet, ils sont générateurs de pertes, au-delà de la complexité introduite par l'ajout de composants au sein de l'antenne. Du fait de la présence d'un fort courant efficace sur la périphérie de la surface de l'antenne, le facteur de qualité Q des composants est primordial. Par exemple, pour une utilisation dans la bande GSM, le gain du système de commutation de la figure 1 est de -3 dBiso pour une impédance L égale à 10 nh et ayant un facteur de qualité Q de 80, alors que le gain est de -4 dBiso pour une impédance L égale à 10 nh et ayant un facteur de qualité Q de 50.Indeed, they are generators of losses, beyond the complexity introduced by the addition of components within the antenna. Due to the presence of a strong current on the periphery of the surface of the antenna, the quality factor Q of the components is essential. For example, for use in the GSM band, the gain of the switching system of the figure 1 is -3 dBiso for an impedance L equal to 10 nh and having a quality factor Q of 80, while the gain is -4 dBiso for an impedance L equal to 10 nh and having a quality factor Q of 50.

Les systèmes connus de commutation sur les retours de masse, sur les antennes patch par exemple, présentent les mêmes inconvénients que les systèmes de commutation au sein de l'antenne. Ils introduisent des pertes importantes.Known switching systems on ground returns, on patch antennas, for example, have the same disadvantages as the switching systems within the antenna. They introduce significant losses.

On peut également élaborer des systèmes complexes d'adaptation de l'impédance de l'antenne sur ses chaînes de réception RX et de transmission TX. Le principe de commutation d'impédance est largement connu pour accorder en fréquence une antenne.Complex systems for adapting the impedance of the antenna to its RX and TX transmission channels can also be developed. The principle of impedance switching is widely known for frequency tuning an antenna.

Un exemple de système connu d'adaptation d'impédance est représenté schématiquement sur la figure 2.An example of a known impedance matching system is shown schematically on the figure 2 .

Un tel système comporte ainsi une antenne 3 d'émission/réception reliée à un module émetteur/récepteur 4 dans lequel tous les éléments numériques et radio d'un téléphone sont présents.Such a system thus comprises a transmitting / receiving antenna 3 connected to a transmitter / receiver module 4 in which all the digital and radio elements of a telephone are present.

Le module 4 comporte ainsi une sortie 47 de chaîne de réception RX d'une bande GSM, une sortie 48 de chaîne de transmission TX GSM, et par exemple une sortie 49 de chaîne de réception RX d'une bande DCS et une sortie 50 de chaîne de transmission TX DCS. D'autres bandes peuvent bien entendu être prévues en complément de la bande ou en remplacement de la bande DCS, comme une bande PCS par exemple.The module 4 thus comprises a reception channel output RX of a GSM band, an output of a GSM TX transmission line, and for example an output of a reception channel RX of a DCS band and an output of TX DCS transmission chain. Other bands can of course be provided in addition to the band or in replacement of the DCS band, such as a PCS band for example.

Des moyens de commutation 41 commandés par des moyens de commande 42 permettent d'effectuer une commutation entre des circuits d'adaptation d'impédances. Ainsi, un circuit d'adaptation 43 d'impédance RX GSM est branché entre les moyens de commutation 41 et la sortie 47, un circuit d'adaptation 44 d'impédance TX GSM est branché entre les moyens de commutation 41 et la sortie 48, un circuit d'adaptation 45 d'impédance RX DCS est branché entre les moyens de commutations 41 et la sortie 49, et un circuit d'adaptation 46 d'impédance TX DCS est branché entre les moyens de commutation 41 et la sortie 50. Comme le montre la figure 4, tous ces moyens sont inclus dans le module émetteur/récepteur 4.Switching means 41 controlled by control means 42 make it possible to switch between impedance matching circuits. Thus, an RX GSM impedance matching circuit 43 is connected between the switching means 41 and the output 47, a GSM TX impedance matching circuit 44 is connected between the switching means 41 and the output 48, an RX DCS impedance matching circuit 45 is connected between the switching means 41 and the output 49, and a TX DCS impedance matching circuit 46 is connected between the switching means 41 and the output 50. shows it figure 4 all these means are included in the transceiver module 4.

On peut ainsi adapter globalement l'antenne à la chaîne RX ou TX de chaque bande GSM et DCS par exemple.It is thus possible to globally adapt the antenna to the RX or TX channel of each GSM and DCS band for example.

Un tel système de commutation comporte cependant de nombreux inconvénients.Such a switching system however has many disadvantages.

En effet, si on veut pouvoir tester les performances en radiofréquences RF du dispositif au point 5, il faut que l'impédance de sortie du module 4 soit sensiblement égale à 50 Ω en ce point.Indeed, if one wants to be able to test the RF performance of the RF device in point 5, it is necessary that the output impedance of the module 4 is substantially equal to 50 Ω at this point.

Or, avec un tel système, il n'y a plus de point à 50 Ω qui soit commun à toutes les bandes de fréquences. Ce manque de point commun à 50 Ω pose les problèmes suivants.However, with such a system, there is no point at 50 Ω that is common to all frequency bands. This lack of common point at 50 Ω poses the following problems.

Il est difficile, voire impossible, d'insérer au module émetteur/récepteur 4 un connecteur pour un accès à une antenne externe.It is difficult, if not impossible, to insert at the transceiver module 4 a connector for access to an external antenna.

Il est difficile de définir un point de contrôle unique en fabrication et lors des contrôles de recettes chez les opérateurs recevant les téléphones mobiles fabriqués. Il est nécessaire d'effectuer de nombreux calibrages pour ces contrôles.It is difficult to define a single point of control in manufacturing and in revenue controls for operators receiving manufactured mobile phones. It is necessary to perform many calibrations for these checks.

Il est difficile, voire impossible, pour les fabricants de modules complets émetteurs/récepteurs comportant une bande de base et une bande radiofréquences de fabriquer des modules standard indépendants de l'application des clients.It is difficult, if not impossible, for the manufacturers of complete transmitter / receiver modules comprising a baseband and a radio frequency band to manufacture standard modules independent of the application of the customers.

Il est difficile, voire impossible, pour les fabricants de modules frontaux (« front end » en anglais) comportant un amplificateur de puissance et un module de commutation de fabriquer des modules standard indépendants de l'application des clients.It is difficult, if not impossible, for manufacturers of front end modules comprising a power amplifier and a switching module to manufacture standard modules that are independent of the application of the customers.

Il est difficile d'adapter le module émetteur/récepteur 4 d'un téléphone mobile à l'autre. Le module 4, notamment le module frontal, dépend de l'antenne 3 utilisée.It is difficult to adapt the transceiver module 4 from one mobile phone to the other. Module 4, in particular the front module, depends on the antenna 3 used.

De plus, les moyens 41 de commutation sont généralement caractérisés à 50 Ω également, ce qui introduit également des pertes au niveau du gain de l'antenne 3.In addition, the switching means 41 are generally characterized at 50 Ω as well, which also introduces losses in the gain of the antenna 3.

Les documents JP-A-409331206 et US-A-5923297 divulguent des systèmes et des procédés de l'état de l'art.The documents JP-A-409331206 and US Patent 5923297 disclose systems and methods of the state of the art.

PRESENTATION DE L'INVENTIONPRESENTATION OF THE INVENTION

L'invention propose de pallier au moins un des inconvénients de l'art antérieur.The invention proposes to overcome at least one of the disadvantages of the prior art.

Un des buts de l'invention est de proposer une technique de commande de la largeur de bande d'une antenne qui permette une réduction des dimensions de l'antenne tout en gardant des performances en rendement et en largeur de bande qui soient acceptables.One of the aims of the invention is to propose a technique for controlling the bandwidth of an antenna which allows a reduction in the dimensions of the antenna while retaining acceptable performances in terms of efficiency and bandwidth.

Un des buts de l'invention est de proposer une technique de commande de la largeur de bande d'une antenne qui permette d'effectuer une adaptation des impédances sur les chaînes de réception RX et de transmission TX lorsque la caractéristique de l'antenne est trop éloignée de 50 Ω.One of the aims of the invention is to propose a technique for controlling the bandwidth of an antenna which makes it possible to adapt the impedances on the reception and transmission channels RX and TX when the characteristic of the antenna is too far from 50 Ω.

Un des buts de l'invention est de proposer une technique de commande de la largeur de bande d'une antenne qui permette d'avoir un point à 50 Ω qui soit commun à toutes les bandes de fréquences.One of the aims of the invention is to propose a technique for controlling the bandwidth of an antenna which makes it possible to have a point at 50 Ω which is common to all the frequency bands.

Notamment, un des buts de l'invention est de proposer une technique de commande de la largeur de bande d'une antenne qui permette d'insérer au module émetteur/récepteur standard comportant une bande de base et une bande radiofréquences un connecteur pour un accès à une antenne externe.In particular, one of the aims of the invention is to propose a technique for controlling the bandwidth of an antenna which makes it possible to insert a connector for an access to the standard transmitter / receiver module comprising a baseband and a radio frequency band. to an external antenna.

Un des buts de l'invention est également de proposer une technique de commande de la largeur de bande d'une antenne qui permette de définir un point de contrôle unique en fabrication et lors des contrôles de recettes chez les opérateursOne of the aims of the invention is also to propose a technique for controlling the bandwidth of an antenna that makes it possible to define a single control point in the manufacture and during the recipe checks at the operators

Un des buts de l'invention est en outre de proposer une technique de commande de la largeur de bande d'une antenne qui permette aux fabricants de modules émetteurs/récepteurs complets comportant une bande de base et une bande radiofréquences de fabriquer des modules standard indépendants de l'application des clients et/ou aux fabricants de modules frontaux (« front end ») comportant un amplificateur de puissance et un module de commutation de fabriquer des modules standard indépendants de l'application des clients.It is also an object of the invention to provide an antenna bandwidth control technique which allows manufacturers of complete transmitter / receiver modules having a baseband and a radio frequency band to make independent standard modules. customer application and / or front end manufacturers including a power amplifier and a switch module to manufacture standard modules independent of the customer application.

Un des buts de l'invention est de proposer une technique de commande de largeur de bande qui permette d'adapter un module émetteur/récepteur comportant une bande de base et une bande radiofréquences d'un téléphone mobile à l'autre.One of the aims of the invention is to propose a bandwidth control technique that makes it possible to adapt a transmitter / receiver module comprising a baseband and a radio frequency band from one mobile telephone to the other.

A cet effet, l'invention propose un système selon la revendication 1.For this purpose, the invention proposes a system according to claim 1.

Des modes de réalisation préférés sont présentés dans les revendications secondaires.Preferred embodiments are presented in the subclaims.

L'invention concerne également un téléphone et un procédé de mise en oeuvre du système.The invention also relates to a telephone and a method of implementing the system.

L'invention présente notamment l'avantage d'étendre la bande passante de l'antenne d'un téléphone mobile en configuration multibande.The invention particularly has the advantage of extending the bandwidth of the antenna of a mobile phone in multiband configuration.

PRESENTATION DES FIGURESPRESENTATION OF FIGURES

D'autres caractéristiques, buts et avantages de l'invention ressortiront de la description qui suit, qui est purement illustrative et non limitative, et qui doit être lue en regard des dessins annexés sur lesquels :

  • la figure 1, déjà commentée, représente schématiquement un exemple d'un système connu de commutation au sein d'une antenne d'un téléphone mobile ;
  • la figure 2, déjà commentée, représente schématiquement un exemple d'un système connu de commutation permettant une adaptation d'impédance ;
  • la figure 3 montre un schéma de principe ;
  • les figures 4A et 4B représentent schématiquement deux états d'un système de commutation d'impédance ;
  • la figure 5 représente le diagramme des pertes de l'antenne en fonction des fréquences ;
  • la figure 6 montre un premier exemple schématique possible d'un système de commutation ;
  • les figures 7A à 7B montrent plusieurs choix possibles pour l'impédance Z d'adaptation ;
  • la figure 8 montre schématiquement un exemple possible complet d'un commutateur comportant un système de commutation ; et
  • la figure 9 montre une variante de la figure 8 dans laquelle l'impédance Z est variable et commandée par les moyens de commande.
Other features, objects and advantages of the invention will emerge from the description which follows, which is purely illustrative and nonlimiting, and which should be read with reference to the appended drawings in which:
  • the figure 1 , already commented, schematically represents an example of a known system of switching within an antenna of a mobile phone;
  • the figure 2 , already commented, schematically represents an example of a known switching system for impedance matching;
  • the figure 3 shows a schematic diagram;
  • the Figures 4A and 4B schematically represent two states of an impedance switching system;
  • the figure 5 represents the pattern of antenna losses as a function of frequencies;
  • the figure 6 shows a first possible schematic example of a switching system;
  • the Figures 7A to 7B show several possible choices for the adaptation impedance Z;
  • the figure 8 schematically shows a complete possible example of a switch having a switching system; and
  • the figure 9 shows a variant of the figure 8 wherein the impedance Z is variable and controlled by the control means.

Les éléments similaires portent des références numériques identiques.Similar elements carry identical numerical references.

DESCRIPTION DETAILLEE DE L'INVENTIONDETAILED DESCRIPTION OF THE INVENTION

La figure 3 montre un schéma de principe. L'inventeur s'est rendu compte qu'en associant un système 6 de commutation d'impédance relativement simple directement en série sur le point d'attaque B d'une antenne 3 multibande (dans le domaine conduit) et en sortie A d'un module émetteur/récepteur 4, on pouvait étendre la bande passante de l'antenne 3.The figure 3 shows a schematic diagram. The inventor has realized that by associating a relatively simple impedance switching system 6 directly in series with the attack point B of a multiband antenna 3 (in the driven domain) and at the output A of a transmitter / receiver module 4, it was possible to extend the bandwidth of the antenna 3.

Le principe est simple et permet d'étendre la bande passante d'une antenne 3 multibande à partir d'une antenne présentant des caractéristiques de bande passante insuffisante pour une application donnée.The principle is simple and makes it possible to extend the bandwidth of a multiband antenna 3 from an antenna having characteristics of insufficient bandwidth for a given application.

Le système de commutation 6 placé entre les points A et B permet de commuter entre au moins deux modes de bande. Chaque mode de bande correspond à un état correspondant au branchement en série d'une impédance entre ladite antenne 3 et ledit module 4.The switching system 6 placed between points A and B makes it possible to switch between at least two band modes. Each band mode corresponds to a state corresponding to the series connection of an impedance between said antenna 3 and said module 4.

Le premier mode de bande est représenté schématiquement à la figure 4A. Dans cette configuration, l'impédance entre les points A et B est nulle et le diagramme des pertes en fonction des fréquences est par exemple celui en trait plein sur la figure 5.The first band mode is shown schematically at the Figure 4A . In this configuration, the impedance between the points A and B is zero and the frequency-dependent losses diagram is for example that in solid line on the figure 5 .

Le deuxième mode de bande est représenté schématiquement à la figure 4B. Dans cette configuration, l'impédance entre les points A et B est égale à une impédance d'adaptation Z et le diagramme des pertes en fonction des fréquences est celui en traits pointillés sur la figure 5. Le diagramme des pertes est décalé dans le domaine des fréquences (phénomène de « frequency shifting » en anglais). On peut ainsi améliorer les performances de l'antenne 3 en fonction de la fréquence d'utilisation.The second band mode is shown schematically at the Figure 4B . In this configuration, the impedance between points A and B is equal to an adaptation impedance Z and the frequency loss diagram is that in dashed lines on the figure 5 . The loss diagram is shifted in the frequency domain (frequency shifting phenomenon). It is thus possible to improve the performance of the antenna 3 as a function of the frequency of use.

L'impédance Z varie en fonction de la fréquence d'utilisation de l'antenne 3. Ainsi, L'impédance Z vaut une première valeur Z1 pour la valeur de fréquence égale f1 et Z vaut une deuxième valeur Z2 pour la valeur de fréquence égale f2.The impedance Z varies as a function of the frequency of use of the antenna 3. Thus, the impedance Z is equal to a first value Z 1 for the equal frequency value f 1 and Z is a second value Z 2 for the value of equal frequency f 2 .

La figure 6 montre un premier exemple schématique possible d'un système 6 de commutation.The figure 6 shows a first possible schematic example of a switching system 6.

Le système 6 est ainsi principalement composé d'un élément actif 61 de commutation pouvant être passant ou bloqué entre le module 4 et l'antenne 3, l'impédance passive Z, étant composée quant à elle par exemple d'une inductance 62 montée en série d'une capacité 63, l'inductance 62 et la capacité 63 étant montées en parallèle de l'élément actif 61 aux points A et B.The system 6 is thus mainly composed of an active switching element 61 that can be switched on or off between the module 4 and the antenna 3, the passive impedance Z being composed, for its part, of an inductor 62 mounted in a series of a capacitor 63, the inductor 62 and the capacitor 63 being connected in parallel with the active element 61 at the points A and B.

Avantageusement, l'élément actif est une diode active 61.Advantageously, the active element is an active diode 61.

Préférentiellement, la diode active 61 est du type diode PIN (semiconducteur de configuration : couche P - couche intrinsèque - couche n). Ainsi, à l'état bloqué, la diode 61 est équivalente à une capacité de 0.2 pF en parallèle avec une résistance de 10 kΩ. Elle matérialise ainsi une impédance infinie approchée. A l'état passant, la diode 61 est équivalente à une résistance de 0.3 Ω en série avec une inductance de 0.4 nh. Elle matérialise ainsi un court-circuit approché.Preferably, the active diode 61 is of the PIN diode type (semiconductor configuration: P-layer - intrinsic layer - n-layer). Thus, in the off state, the diode 61 is equivalent to a capacitance of 0.2 pF in parallel with a resistance of 10 kΩ. It thus materializes an approximate infinite impedance. In the on state, the diode 61 is equivalent to a resistance of 0.3 Ω in series with an inductance of 0.4 nh. It thus materializes an approximate short circuit.

Bien entendu, la diode active 61 peut être remplacée par tout autre dispositif apte à réaliser une commutation entre un court circuit et un circuit ouvert pour des signaux du type considéré.Of course, the active diode 61 may be replaced by any other device capable of switching between a short circuit and an open circuit for signals of the type considered.

Notamment, la diode 61 peut être remplacée par un transistor à effet de champ, ou un commutateur électromécanique miniature en technologie MEMS (« micro-electronic mechanical system »).In particular, the diode 61 may be replaced by a field effect transistor, or a miniature electromechanical switch in MEMS technology ("micro-electronic mechanical system").

On donne dans le tableau 1 des exemples d'applications numériques pour des valeurs de l'impédance ZA de l'antenne 3 pour une bande GSM sur la chaîne RX dans le cas de la figure 6, la diode 61 étant passante. On rappelle que le TOS est le Taux d'Ondes Stationnaires de l'antenne et caractérise l'éloignement de la caractéristique de l'antenne par rapport à la valeur idéale de 50 Ω. Plus le TOS s'approche de -∞, plus l'antenne est idéale. Tableau 1 Fréquence f (MHz) Impédance ZA TOS (dB) Pertes (dB) 925 27 Ω + 2.3 nh -9.4 0.5 948 20 Ω + 6.5 nh -4.26 2 960 21 Ω + 8.8 nh -3.3 2.7 Table 1 gives examples of digital applications for values of the impedance Z A of the antenna 3 for a GSM band on the RX chain in the case of the figure 6 , the diode 61 being busy. It is recalled that the TOS is the Stationary Wave Rate of the antenna and characterizes the distance of the characteristic of the antenna from the ideal value of 50 Ω. The closer the TOS is to -∞, the better the antenna is. Table 1 Frequency f (MHz) Impedance Z A TOS (dB) Losses (dB) 925 27 Ω + 2.3 nh -9.4 0.5 948 20 Ω + 6.5 nh -4.26 2 960 21 Ω + 8.8 nh -3.3 2.7

Si on place, dans le schéma de la figure 6, une capacité 63 de 4.3 pF en série de l'antenne 3, on compense l'élément inductif de 6.5 nh de l'antenne 3. Pour ce faire, on place la capacité 63 en série avec l'antenne 3 en mettant la diode 61 en état bloqué et en mettant une inductance 62 de valeur négligeable. On contrecarre l'impédance parasite de l'antenne 3 et on obtient les résultats du tableau 2. Tableau 2 Fréquence f (MHz) Impédance ZA TOS (dB) Pertes (dB) 925 27 Ω + 6.7 pF -7.3 0.88 948 20 Ω -7.3 0.88 960 21 Ω + 2.2 nh -6.95 0.88 If we place, in the diagram of the figure 6 , a capacity 63 of 4.3 pF in series of the antenna 3, the 6.5 nh inductive element of the antenna 3 is compensated. To this end, the capacitor 63 is placed in series with the antenna 3 by putting the diode 61 in the off state and putting an inductance 62 of negligible value. We counteract the parasitic impedance of the antenna 3 and we obtain the results of Table 2. Table 2 Frequency f (MHz) Impedance Z A TOS (dB) Losses (dB) 925 27 Ω + 6.7 pF -7.3 0.88 948 20 Ω -7.3 0.88 960 21 Ω + 2.2 nh -6.95 0.88

On va donc travailler avec une diode 61 à l'état passant pour les fréquences autour de 925 MHz pour obtenir les bons résultats de la première ligne du tableau 1, et travailler avec une diode à l'état bloqué autour de 948 MHz et 960 MHz pour obtenir les résultats des deux dernières lignes du tableau 2. On a ainsi une utilisation de l'antenne 3 qui est optimisée en fonction de la fréquence.We will therefore work with a diode 61 in the on state for the frequencies around 925 MHz to obtain the good results of the first line of Table 1, and work with a diode in the off state around 948 MHz and 960 MHz to obtain the results of the last two rows of Table 2. There is thus a use of the antenna 3 which is optimized as a function of frequency.

Les développements qui précèdent s'appliquent à une bande unique. Pour le cas d'une antenne 3 ayant plusieurs fréquences de résonance, le choix de Z est bien entendu différent de ce qui est représenté à la figure 6. Il tient compte notamment de la présence de la diode 61 et de son schéma électrique équivalent.The above developments apply to a single band. For the case of an antenna 3 having several resonant frequencies, the choice of Z is of course different from what is represented in FIG. figure 6 . It takes into account in particular the presence of the diode 61 and its equivalent electrical diagram.

Les figures 7A à 7E montrent plusieurs choix possibles pour Z, le choix étant fait en fonction des différentes bandes.The Figures 7A to 7E show several possible choices for Z, the choice being made according to the different bands.

La figure 7A représente une capacité en parallèle avec une inductance montée en série avec une capacité, la figure 7B représente une inductance en série avec une capacité, la figure 7C représente une inductance montée en parallèle avec une capacité, le montage étant en série avec une inductance, la figure 7D représente une inductance en série avec une capacité et la figure 7E représente une inductance montée en parallèle avec une capacité. Le tableau 3 reprend les caractéristiques électriques équivalentes de chaque Z en fonction de la bande d'utilisation. Tableau 3 Schémas Comportement de Z pour la bande GSM Comportement de Z pour la bande DCS/PCS Figure 7A C1 C2 Figure 7B L1 L2 (L1<L2) Figure 7C L1 L2 (L1>L2) Figure 7D C1 L2 Figure 7E L1 C2 The Figure 7A represents a capacitance in parallel with an inductance connected in series with a capacitance, the Figure 7B represents a series inductance with a capacitance, the Figure 7C represents an inductance connected in parallel with a capacitance, the mounting being in series with an inductor, the Figure 7D represents a series inductance with a capacitance and the figure 7E represents an inductance connected in parallel with a capacitance. Table 3 shows the equivalent electrical characteristics of each Z as a function of the usage band. Table 3 schemes Behavior of Z for the GSM band Behavior of Z for the DCS / PCS band Figure 7A C 1 C 2 Figure 7B L 1 L 2 (L 1 <L 2 ) Figure 7C L 1 L 2 (L 1 > L 2 ) Figure 7D C 1 L 2 Figure 7E L 1 C 2

On cherche ainsi à ce que l'impédance Z, en fonction des fréquences, soit équivalente à une capacité lorsque l'antenne 3 comporte un élément inductif parasite et que Z soit équivalente à une inductance lorsque l'antenne 3 comporte un élément capacitif parasite. Z compense ainsi toujours le comportement parasite de l'antenne 3 pour une fréquence donnée, pour que le TOS et les pertes soient les plus faibles possibles.It is thus sought that the impedance Z, as a function of the frequencies, is equivalent to a capacitance when the antenna 3 comprises a parasitic inductive element and that Z is equivalent to an inductance when the antenna 3 comprises a parasitic capacitive element. Z compensates as well always the parasitic behavior of the antenna 3 for a given frequency, so that the TOS and the losses are the lowest possible.

La largeur de la bande passante de l'antenne est ainsi commandée dynamiquement.The width of the bandwidth of the antenna is thus dynamically controlled.

La figure 8 montre schématiquement un exemple possible complet d'un commutateur comportant un système 6 de commutation.The figure 8 schematically shows a complete possible example of a switch having a switching system 6.

Le système 6 est branché, comme sur les figures 3 et 6 par exemple, entre le module émetteur/récepteur 4 et l'antenne 3. La liaison entre le système 6 et le module 4 est matérialisée par le point 5, qui est le point commun à 50 Ω de toutes les bandes de fréquences. La liaison entre le système 6 et l'antenne 3 est matérialisée quant à elle par le pôle 8.The system 6 is connected, as on the figures 3 and 6 for example, between the transmitter / receiver module 4 and the antenna 3. The connection between the system 6 and the module 4 is embodied by the point 5, which is the common point at 50 Ω of all the frequency bands. The connection between the system 6 and the antenna 3 is materialized as for it by the pole 8.

Le téléphone comporte de plus des moyens 7 formant processeur central définissant la stratégie de commutation de l'élément actif 61, préférentiellement la diode active 61, en communication. Les moyens 7 comportent ainsi des moyens mémoire aptes à stocker un programme de commutation de la diode active 61 et des moyens formant microprocesseur permettant la mise en oeuvre du programme.The telephone further comprises means 7 forming a central processor defining the switching strategy of the active element 61, preferably the active diode 61, in communication. The means 7 thus comprise memory means able to store a switching program of the active diode 61 and microprocessor means for implementing the program.

La stratégie de commutation de la diode active 61 est ainsi prédéfinie dans le programme de commutation et dépend de la fréquence et du cycle de communication (phase de transmission, réception ou d'écoute de contrôle). La liaison entre le système 6 et les moyens 7 s'effectue par un pôle référencé par 9.The switching strategy of the active diode 61 is thus predefined in the switching program and depends on the frequency and the communication cycle (transmission phase, reception or monitoring). The connection between the system 6 and the means 7 is effected by a pole referenced by 9.

Les moyens 7 commandent également, grâce à une liaison 68, des moyens 41 de commutation des différentes chaînes (RX, TX et d'écoute de contrôle) des différentes bandes GSM/DCS/PCS du téléphone. Les moyens 41 de commutation des différentes chaînes sont similaires aux moyens référencés par 41 sur la figure 1. La commande des moyens 41 de commutation des bandes s'effectue en synchronisme de la commande du système 6 de commutation de la diode active 61.The means 7 also control, through a link 68, means 41 for switching the different channels (RX, TX and monitoring) of the different GSM / DCS / PCS bands of the telephone. The means 41 for switching the different channels are similar to the means referenced 41 on the figure 1 . The control of the band switching means 41 is performed in synchronism with the control of the switching system 6 of the active diode 61.

Le système 6 est par ailleurs relié à la masse du téléphone grâce au pôle 10.The system 6 is also connected to the mass of the telephone thanks to the pole 10.

Comme précédemment, l'impédance Z et la diode active 61 sont branchées en parallèles l'une de l'autre entre les points A et B. Le point A est relié au point 5 et le point B est relié au point 8.As previously, the impedance Z and the active diode 61 are connected in parallel with each other between the points A and B. The point A is connected to the point 5 and the point B is connected to the point 8.

Une capacité 66 est branchée entre le pôle 10 et une borne 67 interne au système 6. Une résistance de contrôle 65 est quant à elle branchée entre le point 67 et le pôle 9.A capacitor 66 is connected between the pole 10 and a terminal 67 internal to the system 6. A control resistor 65 is connected between the point 67 and the pole 9.

Une inductance « self de choc » 64 est branchée entre le point 67 et le point A.A choke inductor 64 is connected between point 67 and point A.

Si selon le programme de commutation, la diode 61 est toujours passante en TX et que la diode est bloquée en RX, alors le voltage de commande de la diode arrivant au pôle 9 est de 3 V pour l'état passant et de 0 V pour l'état bloqué. Il n'y a en effet pas d'harmoniques générées.If according to the switching program, the diode 61 is still on TX and the diode is locked in RX, then the control voltage of the diode arriving at the pole 9 is 3 V for the on state and 0 V for the blocked state. There is indeed no harmonic generated.

Par contre, le programme de commutation peut fixer que la diode active 61 peut être bloquée en TX également. Dans ce cas, il y a risque de création d'harmoniques. Par conséquent, le voltage de commande arrivant au pôle 9 est cette fois 3 V pour l'état passant et de -20/-30 V pour l'état bloqué. On évite ainsi la création d'harmoniques.On the other hand, the switching program can set that the active diode 61 can be locked in TX as well. In this case, there is a risk of creating harmonics. Therefore, the control voltage arriving at the pole 9 is this time 3 V for the on state and -20 / -30 V for the off state. This avoids the creation of harmonics.

Le signal de commande peut également être un courant de commande.The control signal may also be a control current.

Le signal de commande arrivant au pôle 9 commande ainsi l'ouverture ou la fermeture de la diode 61 en fonction de la fréquence d'utilisation et du cycle de communication (transmission TX, réception RX ou d'écoute de contrôle). La commande est ainsi dynamique.The control signal arriving at the pole 9 thus controls the opening or closing of the diode 61 according to the frequency of use and the communication cycle (TX transmission, RX reception or monitoring). The command is thus dynamic.

La commutation de la diode 61 d'un état à l'autre s'effectue pendant les phases d'inactivité radio du téléphone, et dans un temps très court (de l'ordre de quelques dizaines de microsecondes) en fonction de la stratégie prédéfinie dans les moyens 7.The switching of the diode 61 from one state to another takes place during the phases of radio inactivity of the telephone, and in a very short time (of the order of a few tens of microseconds) according to the predefined strategy in the means 7.

Avec un tel système, on peut obtenir des pertes de l'ordre de 0.1 dB seulement (à cause de l'inductance de contrôle et de la résistance de la diode), alors que des systèmes de commutation au sein de l'antenne présentent au mieux des pertes de 1.2 dB.With such a system, it is possible to obtain losses of the order of 0.1 dB only (because of the control inductance and the resistance of the diode), whereas switching systems within the antenna present at the same time. better losses of 1.2 dB.

Les développements qui précèdent s'appliquent à un téléphone ayant une seule antenne. On peut bien entendu étendre l'invention à un téléphone comportant plus d'une antenne. On peut ainsi prévoir une autre antenne dédiée à la bande UMTS (« Universal Mobile Telecommunication System » ou système universel de communication avec les mobiles) par exemple en parallèle de l'antenne déjà décrite dédiée au GSM, DCS, PCS.The above developments apply to a phone with a single antenna. We can of course extend the invention to a telephone having more than one antenna. It is thus possible to provide another antenna dedicated to the UMTS ("Universal Mobile Telecommunication System" or Universal Mobile Communication System), for example in parallel with the already described antenna dedicated to GSM, DCS, PCS.

Les développements qui précèdent s'appliquent également à une inductance Z active.The foregoing developments also apply to active Z inductance.

La figure 9 montre un mode de réalisation possible d'un commutateur selon l'invention. Le dispositif est similaire à celui de la figure 8 et les éléments ne sont pas repris pour plus de clarté. La différence dans le mode de réalisation de la figure 9 par rapport à l'exemple de la figure 8 est que l'impédance Z est variable. La valeur de l'impédance Z est réglée par les moyens de commande 7 grâce à une liaison 69. Les moyens 7 commandent ainsi la valeur de l'impédance Z en même temps que l'état de la diode active 61 pour une utilisation optimisée de l'antenne.The figure 9 shows a possible embodiment of a switch according to the invention. The device is similar to that of the figure 8 and items are not included for clarity. The difference in the embodiment of the figure 9 compared to the example of the figure 8 is that the impedance Z is variable. The value of the impedance Z is set by the control means 7 by means of a link 69. The means 7 thus control the value of the impedance Z at the same time as the state of the active diode 61 for optimized use of the the antenna.

L'invention présente l'avantage de permettre une commande dynamique de la largeur de la bande passante de l'antenne grâce à un dispositif simple.The invention has the advantage of allowing dynamic control of the bandwidth of the antenna through a simple device.

Claims (7)

  1. A system for controlling the width of the pass-band of an antenna (3) of a mobile telephone comprising a transmission/reception module (4) and an impedance switching system (6) comprising an active switching element (61) that is capable of switching between at least two switching states, wherein the switching system (6) is controlled by dynamic control means (7) comprising memory means that are capable of storing a program for switching the switching system (6) and means forming a microprocessor that allows for implementing the program, wherein a passing or blocked state of the active element (61) is controlled by the dynamic control means (7), wherein said active element (61) is mounted in parallel to an adapting impedance (Z), each switching state corresponding to the connection in series of an impedance between said antenna (3) and said module (4), wherein the active element (61) is an active diode and the adapting impedance (Z) is a variable impedance, a value of which is controlled by the dynamic control means (7).
  2. The system according to claim 1, wherein the active element (61) is capable of switching between a first state, in which the antenna (3) is directly connected to the module (4), and a second state, in which the adapting impedance (Z) is connected in series between said antenna (3) and said module (4).
  3. The system according to claim 1 or 2, wherein the switching system (6) comprises at least one pole for connecting to the ground of the telephone, a pole for connecting to the antenna (3), a pole for connecting to the transmission/reception module (4) and a pole for connecting to the dynamic control means (7) that is capable of receiving a control voltage or current.
  4. The system according to one of claims 1 to 3, wherein the module (4) comprises multiband switching means (41).
  5. The system according to claim 4, wherein the multiband switching means (41) are controlled by the dynamic switching means (7).
  6. A mobile telephone comprising at least one antenna (3) and a transmission/reception module (4), wherein it comprises at least one control system according to one of claims 1 to 5.
  7. A method for controlling the width of the pass-band of an antenna (3) of a mobile telephone comprising a transmission/reception module (4), comprising a step of dynamically controlling an impedance switching system (6) comprising an active switching element (61) by dynamic control means (7) comprising memory means that are capable of storing a program for switching the switching system (6) and means forming a microprocessor that allows for implementing the program, in order to switch said switching system (6) between at least two switching states, wherein a passing or blocked state of the active element (61) is controlled by the dynamic control means (7), wherein said active element (61) is mounted in parallel to an adapting impedance (Z), said method further comprising a step of controlling means (41) for multiband switching of the module (4) in synchronism with the switching system (6), each switching state corresponding to the connection in series of an impedance between said antenna (3) and said module (4), and a step of controlling, by the dynamic control means (7), a value of the adapting impedance (Z), which is a variable impedance.
EP05102363A 2004-03-25 2005-03-23 System and method of dynamic control of the band-width of an antenna, associated telephone Not-in-force EP1580834B1 (en)

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FR0403067A FR2868215B1 (en) 2004-03-25 2004-03-25 SYSTEM AND METHOD FOR DYNAMICALLY CONTROLLING THE BANDWIDTH OF ANTENNA, TELEPHONE
FR0403067 2004-03-25

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JP2001077719A (en) * 1999-09-07 2001-03-23 Nec Saitama Ltd Portable telephone set capable of having antenna impedance variation compensation
JP2002314453A (en) * 2001-04-10 2002-10-25 Nec Saitama Ltd Mobile phone with antenna matching circuit switching function

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EP0813311A2 (en) * 1996-06-12 1997-12-17 Nec Corporation Antenna matching circuit switching system in TDMA portable telephone

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ES2396132T3 (en) 2013-02-19
FR2868215A1 (en) 2005-09-30
EP1580834A1 (en) 2005-09-28
FR2868215B1 (en) 2009-02-20

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