EP1510601B9 - appareil de placage de wafer - Google Patents

appareil de placage de wafer Download PDF

Info

Publication number
EP1510601B9
EP1510601B9 EP04016833A EP04016833A EP1510601B9 EP 1510601 B9 EP1510601 B9 EP 1510601B9 EP 04016833 A EP04016833 A EP 04016833A EP 04016833 A EP04016833 A EP 04016833A EP 1510601 B9 EP1510601 B9 EP 1510601B9
Authority
EP
European Patent Office
Prior art keywords
ring
fact
sealing
seal ring
rings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP04016833A
Other languages
German (de)
English (en)
Other versions
EP1510601A1 (fr
EP1510601B1 (fr
Inventor
Jürgen Gutekunst
Vasile-Adrian Bojan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rena Sondermaschinen GmbH
Original Assignee
Rena Sondermaschinen GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rena Sondermaschinen GmbH filed Critical Rena Sondermaschinen GmbH
Publication of EP1510601A1 publication Critical patent/EP1510601A1/fr
Application granted granted Critical
Publication of EP1510601B1 publication Critical patent/EP1510601B1/fr
Publication of EP1510601B9 publication Critical patent/EP1510601B9/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/004—Sealing devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation

Definitions

  • Wafers are sheet-like geometric circular structures, which are usually the basis for chip production for use in the field of semiconductor technology.
  • Such wafers preferably consist of semiconductor materials of the fourth group of the chemical periodic table, for example of silicon or germanium.
  • the elements of the fourth periodic group are neither ion-conducting metals nor non-conductive non-metals, but quasi-semi-metals with so-called ionic semiconductor properties ,
  • Wafers are usually thin round disks, in the range of about one millimeter thickness and a diameter of about 100 to 300 mm, which are cut from so-called single crystals.
  • the treatment of the wafer surface can be done mechanically, for example by polishing, or by applying different types of coatings.
  • the wafer surface can be coated partially or over the entire surface. Such a coating is usually functionally related.
  • the surface treatments are carried out, for example, by means of painting or similar methods, but in particular, as in the present case, by means of the electroplating method, when metal layers are to be applied to the wafer surface.
  • the plating method has the significant advantage that the metal deposits on the wafer can be made from aqueous solution of metal salts dissolved in distilled water. Specifically, these metal salt solutions are called electrolyte solutions or simplify electrolytes.
  • the electroplating method offers multiple variations for the design of the features of the metal layer to be applied to the wafer. Since metal salts are readily soluble in water, the various metals can be applied to the wafer from the aqueous solutions of the salts. Regarding conductivity change properties, from less conductive chromium to high conductivity metals such as copper, silver or gold.
  • the electroplating process is optimally applicable because some parameters of the process technology can be largely varied without complications and these parameters have an effect on the structure of the metal coating.
  • these parameters are for example; the concentration of the salt content of the electrolyte baths, the current density and voltage of the supplied via the cathode and anode from an electrical power source process energy and the electrolyte bath temperature.
  • Wafer plating technology is well known, has a wide range of applications and need not be discussed further here.
  • Wafer plating technology is a special field of galvanization. Their advantages have proven themselves in practice.
  • the applied and known wafer plating apparatuses which represent the prior art are those which are described by way of example with FIG.
  • US 2003/132105 A1 describes a wafer holder for the purpose of electropolishing, comprising an upper and a lower holding section with an intermediate two-component electrolyte sealing system, a spring 306 and a differently shaped electrolyte sealing element 310.
  • US 2003/132118 A1 describes a device for electropolishing rotating wafer disks in a hermetically sealed device.
  • the sealing of the upper to the lower device component is carried out by means of a regularly used seal which has no specific features.
  • US Pat. No. 6,080,291 describes an apparatus for electropolishing rotating wafer disks.
  • the power supply contact takes place annularly on the wafer wafer and, accordingly, the electrolyte seal.
  • the annular, specially shaped seal has a sliding lip which is pressed against the side of the wafer disk and thus seals.
  • WO 00/32848 describes a hydraulic or pneumatic system for electrolyte sealing, wherein by means of the pressure from above on the wafer wafer, it is pressed against a power supply contact ring.
  • US Patent 5,405,518 describes a workpiece fuser for round disc-shaped workpieces and a system for electrochemically engraving workpieces.
  • the sealing system is designed to minimize fracture of the workpieces and consists, as shown in Figure 3 of this patent, of an indirect seal pressure system with dual ring function or, as shown in Figure 5 of the patent, two counter seal rings pressed against the workpiece and power supply electrode.
  • DE-OS 199 23 871 A1 shows a dynamically operating sealing device for the purpose of avoiding the adhesion of the sealing material to thin slices, specially designed for the support of silicon wafers.
  • a problem in general in the case of the known wafer plating apparatuses is the sealing area of the plating bath between wafer top and wafer underside.
  • the O-ring 18 has a kind Gleitlalt Operationssfunktion in the sliding gap 21.
  • the assembly of the O-ring 18 may, however , which is disadvantageous, only in the dry state, thus in an empty Galvanisationsbad.
  • the system therefore inevitably becomes susceptible to leaching of the electrolyte because of the dry-wet change.
  • the temperature differences present play an important role in the various specific coefficients of thermal expansion of the device elements used.
  • the required 100% density safety causes process interruptions in the event of leaks in the fixture system.
  • a sustainable, consistent product quality is then not given and considered in percentage terms, the costly raw material of the present to be electroplated wafers, defective production, from the cost side, to book.
  • a particular weak point, as shown in Figure 1 prior art, is the side clearance between the sealing ring 3 and the device base 1.
  • the seal between these device parts by means of the relatively large-sized O-ring 18 has the disadvantage that the O-ring to roll tends to cause damage to the ring during or after manipulation of the sealing ring 3 until its fixation in the final position, with the result of subsequent electrolyte leakage.
  • the side clearance, gap 21, between the seal ring 3 and the device base 1 is a system weakness.
  • the insertion of the O-ring 18 is also complicated because the O-ring 18 must be greatly stretched when inserted into the annular groove and it can also come in this manipulation to O-ring damage.
  • the object of the invention was therefore to develop a special electroplating apparatus which makes it possible to design the electroplating of wafer disks in such a way that a reliable seal is provided in relation to the electrolyte leakage between the upper wafer area and the lower wafer area.
  • the assembly of the sealing system must be easy to manipulate and be designed so that the accuracy of fit between the individual device elements harmonized with each other so that no side margins, such as gap 21, are present.
  • the elastic actual sealing elements namely elastic O-rings, only in a vertical line to be positioned to exclude friction opportunities on the O-ring surface from the outset.
  • the O-rings are in the course of fixture assembly after their insertion into the designated rooms, no longer be mechanically affected.
  • a galvanizing device for electroplating wafer disks consisting of; an internally threaded device base 1, a union nut 4, for fixing and fixing the entire system of the device, an adapter 5, as a receiving base for the wafer discs to be plated and sealing members for sealing the electrolyte portion, which is characterized; in that the electroplating device has an upper sealing ring (3), at both ends of which an O-ring inserting recess is situated, for the insertable O-rings (6), at the upper end of the sealing ring (3) and O-ring (7) lower end of the sealing ring (3) and the electroplating device has a further lower sealing element (10), in the form of a ring or a round disc, each having a counterpart to the upper sealing ring (3) positioned for the insertion of the lower O-ring ( 7) and the sealing ring (3) and the sealing elements (10), use of clearance in the base (1) or the intermediate part (16) used, with inserted O-rings (6) and (7) are pressed against each other,
  • the pressing of the lower sealing ring against the upper sealing ring may alternatively take place by means of the union nut 4 when the device base, with interposed elastic buffer elements 8, as shown in the example of Figures 2 and 3, as Druckkonterpart for the sealing ring 10 is used.
  • a bellows seal between the sealing ring 10 and device base is connected in such a case.
  • the bellows can be used arbitrarily, vertically or horizontally and is usually made of rubber or rubberized textile material.
  • the bellows sealing system when the bellows 9 is designed in a double manner and thereby forms a chamber, can also serve as a channel 14 for pneumatic or hydraulic pressure media for pressing the lower sealing ring 10, as shown in FIG.
  • FIG. 1 shows by way of example a device for the prior art.
  • the inventive level consists in particular in the vertical system assembly of the inventive device.
  • the tension of the assembled system elements is vertical-rectilinear. Accordingly, the assembly of the individual elements can be carried out according to the insertion principle.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Automation & Control Theory (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Medicines Containing Plant Substances (AREA)
  • Medicinal Preparation (AREA)
  • Sealing Battery Cases Or Jackets (AREA)

Claims (7)

  1. Dispositif de galvanisation destiné à la galvanisation de tranches de silicium composé: d'un support pour le dispositif avec filetage intérieur (1), d'un écrou-raccord (4) pour l'attache et la fixation de l'intégralité du système du dispositif, d'un adaptateur (5) servant de support de réception pour la tranche de silicium à galvaniser et d'éléments étanches servant à étancher la zone d'électrolyte,
    caractérisé en ce que :
    le dispositif de galvanisation possède un anneau étanche supérieur (3) sur les deux faces duquel est situé un évidemment destiné à recevoir des joints toriques insérés, l'un se trouvant sur la face supérieure de l'anneau étanche pour recevoir le joint torique (6) et l'autre se trouvant sur la face inférieure de l'anneau étanche pour recevoir le joint torique (7), que le dispositif de galvanisation possède un autre anneau étanche inférieur (10) ayant la forme d'un anneau ou d'un disque disposant chacun d'un contre-évidement positionné en face de l'évidement de l'anneau étanche supérieur (3) et destiné à recevoir le joint torique inférieur (7) et que l'anneau étanche (3) et les éléments étanches (10) sont insérés dans le support (1) ou la partie intermédiaire (16) sans jeu latéral pressant ainsi les joints toriques (6) et (7) l'un contre l'autre pour garantir une zone close et étanche à l'électrolyte.
  2. Dispositif selon la revendication 1, caractérisé en ce que
    la compression de l'un des éléments étanches (10) contre l'anneau étanche (3), joints toriques insérés, s'effectue au moyen de systèmes de pression pneumatique voire hydraulique.
  3. Dispositif selon les revendications 1 et 2, caractérisé en ce que,
    lors de l'utilisation des systèmes de pression pneumatique ou hydraulique avec un anneau étanche (10) et un joint torique (7) inséré en tant que contrepartie inférieure à l'anneau étanche (3), l'alimentation en fluide de pression hydraulique ou pneumatique s'effectue par le biais d'un canal continu (14) composé d'un soufflet double (15) étanche.
  4. Dispositif selon les revendications 1 et 2, caractérisé en ce que,
    lors de l'utilisation des systèmes de pression pneumatique avec un disque étanche (10) et un joint torique (7) inséré en tant que contrepartie inférieure à l'anneau étanche (3), l'alimentation en fluide de pression hydraulique voire pneumatique s'effectue en fonction de la surface sur une membrane flexible (17), ce qui permet de presser l'anneau étanche (3) et le disque étanche (10) l'un contre l'autre de manière dynamique et intégralement homogène.
  5. Dispositif selon les revendications 1 et 3 et 4, caractérisé en ce que,
    l'alimentation régulée en fluide de pression s'effectue par le biais d'une unité de régulation qui respecte le domaine de charge des joints toriques de telle manière que les joints toriques ne sont pas déformés, ce qui garantit une étanchéité optimale.
  6. Dispositif selon la revendication 1, caractérisé en ce que,
    les amortisseurs de soutien (8) et (12) sont utilisés pour amortir la charge à laquelle sont soumis les joints toriques lors de la tension et pour favoriser une configuration différentiable en hauteur du dispositif.
  7. Dispositif selon la revendication 1, caractérisé en ce que,
    des systèmes de soufflet (9) sont utilisés pour étancher la zone d'électrolyte dans les différentes possibilités de configuration du dispositif.
EP04016833A 2003-07-19 2004-07-16 appareil de placage de wafer Expired - Lifetime EP1510601B9 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10333068A DE10333068A1 (de) 2003-07-19 2003-07-19 Scheibengalvanikvorrichtung
DE10333068 2003-07-19

Publications (3)

Publication Number Publication Date
EP1510601A1 EP1510601A1 (fr) 2005-03-02
EP1510601B1 EP1510601B1 (fr) 2006-03-01
EP1510601B9 true EP1510601B9 (fr) 2006-11-15

Family

ID=34042003

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04016833A Expired - Lifetime EP1510601B9 (fr) 2003-07-19 2004-07-16 appareil de placage de wafer

Country Status (6)

Country Link
US (1) US20050045473A1 (fr)
EP (1) EP1510601B9 (fr)
CN (1) CN100339511C (fr)
AT (1) ATE318945T1 (fr)
CA (1) CA2474830A1 (fr)
DE (2) DE10333068A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130306465A1 (en) * 2012-05-17 2013-11-21 Applied Materials, Inc. Seal rings in electrochemical processors
JP6713916B2 (ja) * 2016-12-01 2020-06-24 株式会社荏原製作所 基板ホルダ、めっき装置、及び基板ホルダの製造方法
CN109158713B (zh) * 2018-09-27 2024-05-07 格林美（武汉）城市矿产循环产业园开发有限公司 一种继电器螺纹微镀修复定位装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5405518A (en) * 1994-04-26 1995-04-11 Industrial Technology Research Institute Workpiece holder apparatus
JP3578811B2 (ja) * 1994-10-12 2004-10-20 シチズン時計株式会社 半導体ウエハーのメッキ方法
US5578167A (en) * 1996-01-31 1996-11-26 Motorola, Inc. Substrate holder and method of use
JP3106418B2 (ja) * 1996-07-30 2000-11-06 株式会社東京精密 研磨装置
JP3366193B2 (ja) * 1996-09-10 2003-01-14 ヤマハ発動機株式会社 表面処理装置におけるシール装置
US6080291A (en) * 1998-07-10 2000-06-27 Semitool, Inc. Apparatus for electrochemically processing a workpiece including an electrical contact assembly having a seal member
US6248222B1 (en) * 1998-09-08 2001-06-19 Acm Research, Inc. Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces
US6228233B1 (en) * 1998-11-30 2001-05-08 Applied Materials, Inc. Inflatable compliant bladder assembly
DE19923871C2 (de) * 1999-05-25 2003-11-13 Rossendorf Forschzent Einrichtung zur abgedichteten Halterung dünner Scheiben
US6673216B2 (en) * 1999-08-31 2004-01-06 Semitool, Inc. Apparatus for providing electrical and fluid communication to a rotating microelectronic workpiece during electrochemical processing
JP2001158993A (ja) * 1999-11-30 2001-06-12 Honda Motor Co Ltd 筒状部材のメッキ装置
JP2001260065A (ja) * 2000-03-17 2001-09-25 Advantest Corp 部品保持装置
US6685815B2 (en) * 2002-01-14 2004-02-03 Applied Materials Inc. Electroplating of semiconductor wafers
US7147232B2 (en) * 2003-06-30 2006-12-12 Hydra-Lock Corporation Workpiece holder

Also Published As

Publication number Publication date
DE502004000318D1 (de) 2006-04-27
EP1510601A1 (fr) 2005-03-02
ATE318945T1 (de) 2006-03-15
EP1510601B1 (fr) 2006-03-01
CN1614100A (zh) 2005-05-11
US20050045473A1 (en) 2005-03-03
CN100339511C (zh) 2007-09-26
CA2474830A1 (fr) 2005-01-19
DE10333068A1 (de) 2005-02-10

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