EP1478494B1 - Method and system for controlling the chemical mechanical polishing of substrates by calculating an overpolishing time and/or a polishing time of a final polishing step - Google Patents

Method and system for controlling the chemical mechanical polishing of substrates by calculating an overpolishing time and/or a polishing time of a final polishing step Download PDF

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Publication number
EP1478494B1
EP1478494B1 EP02798618A EP02798618A EP1478494B1 EP 1478494 B1 EP1478494 B1 EP 1478494B1 EP 02798618 A EP02798618 A EP 02798618A EP 02798618 A EP02798618 A EP 02798618A EP 1478494 B1 EP1478494 B1 EP 1478494B1
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EP
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Prior art keywords
time
substrate
overpolish
material layer
polishing
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EP02798618A
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German (de)
English (en)
French (fr)
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EP1478494A1 (en
Inventor
Dirk Wollstein
Jan Raebiger
Gerd Marxsen
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Priority claimed from DE10208165A external-priority patent/DE10208165C1/de
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/03—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor

Definitions

  • the present invention generally relates to the field of fabrication of integrated circuits, and, more particularly, to the chemical mechanical polishing (CMP) of material layers, such as metallization layers, during the various manufacturing stages of an integrated circuit.
  • CMP chemical mechanical polishing
  • Chemical mechanical polishing is of particular interest for the formation of so-called metallization layers, that is, layers including recessed portions such as vias and trenches filled with an appropriate metal to form metal lines connecting the individual semiconductor elements.
  • metallization layers that is, layers including recessed portions such as vias and trenches filled with an appropriate metal to form metal lines connecting the individual semiconductor elements.
  • aluminum has been used as the preferred metallization layer, and in sophisticated integrated circuits, as many as twelve metallization layers may have to be provided to obtain the required number of connections between the semiconductor elements.
  • Semiconductor manufacturers are now beginning to replace aluminum with copper - due to the superior characteristics of copper over aluminum with respect to electromigration and conductivity. Through use of copper, the number of metallization layers necessary to provide for the required functionality may be decreased since, in general, copper lines can be formed with a smaller cross-section due to the higher conductivity of copper compared to aluminum.
  • planarization of the individual metallization layers remains of great importance.
  • a commonly used technique for forming copper metallization lines is the so-called damascene process in which the vias and trenches are formed in an insulating layer with the copper subsequently being filled into the vias and trenches. Thereafter, excess metal is removed by chemical mechanical polishing after the metal deposition, thereby obtaining planarized metallization layers.
  • CMP is successfully used in the semiconductor industry, the process has proven to be complex and difficult to control, especially when a great number of large-diameter substrates are to be treated.
  • substrates such as the wafers bearing the semiconductor elements, are mounted on an appropriately formed carrier, a so-called polishing head, and the carrier is moved relative to the polishing pad while the surface of the wafer is in contact with a polishing pad.
  • a slurry is supplied to the polishing pad, wherein the slurry contains a chemical compound that reacts with the material or materials of the layer to be planarized by, for example, converting the metal into an oxide, and the reaction product, such as copper oxide, is mechanically removed by abrasives contained in the slurry and the polishing pad.
  • the insulating layer material for example silicon dioxide, as well as the copper and copper oxide
  • the composition of the slurry is selected to show an optimum polishing characteristic for a specified material.
  • the different materials exhibit different removal rates so that, for example, the copper and copper oxide are removed more rapidly than the surrounding insulating material. As a consequence, recessed portions are formed on top of the metal lines compared to the surrounding insulating material.
  • the insulating material is also removed, although typically at a reduced removal rate compared to the copper, and thus the thickness of the initially deposited insulating layer is reduced.
  • the reduction of the thickness of the insulating layer is commonly referred to as "erosion.”
  • Erosion and dishing may not only depend on the differences in the materials that comprise the insulating layer and the metal layer, but may also vary across the substrate surface and may even change within a single chip area in correspondence with the pattern that is to be planarized. That is, the removal rate of the metal and the insulating material is determined based upon a variety of factors such as, for example, the type of slurry, the configuration of the polishing pad, structure and type of the polishing head, the amount of the relative movement between the polishing pad and the substrate, the pressure applied to the substrate while moving relatively to the polishing pad, the location on the substrate, the type of feature pattern to be polished, and the uniformity of the underlying insulating layer and of the metal layer, etc.
  • factors such as, for example, the type of slurry, the configuration of the polishing pad, structure and type of the polishing head, the amount of the relative movement between the polishing pad and the substrate, the pressure applied to the substrate while moving relatively to the polishing pad, the location on the substrate, the type of feature pattern to
  • the polishing head is configured to provide two or more portions that may exert an adjustable pressure to the substrate, thereby controlling the frictional force and thus the removal rate at the substrate regions corresponding to these different head portions.
  • the polishing platen carrying the polishing pad and the polishing head are moved relative to each other in such a way that as uniform a removal rate as possible is obtained across the entire surface area, and so that the lifetime of the polishing pad that gradually wears during operation is maximized.
  • a so-called pad conditioner is additionally provided in the CMP tool that moves on the polishing pad and reworks the polishing surface so as to maintain similar polishing conditions for as many substrates as possible.
  • the movement of the pad conditioner is controlled in such a manner that the polishing pad is substantially uniformly conditioned while, at the same time, the pad conditioner will not interfere with the movement of the polishing head.
  • the first condition may not be fulfilled without significantly adversely affecting other parameters of the manufacturing process, such as throughput, and thus cost-effectiveness. Accordingly, in practice, a plurality of substrates are subjected to the CMP process until the first measurement result of the initially processed substrate is available. That is, the control loop contains a certain amount of delay that must be taken into consideration when adjusting the process parameters on the basis of the measurement results.
  • a predictive model is desired such as the model described in the paper cited above and/or a set of experimental data to extract process variables, such as pressure applied to the substrate, slurry composition, etc., that may be manipulated to obtain the desired output of the CMP process.
  • the present invention is directed to a method that may solve, or at least reduce, some or all of the aforementioned problems and differs from the subject matter disclosed in Chamness et al. in that a linear model - including the control variables and sensitivity parameters of both, a second material layer of the currently processed substrate, and a second material layer of the preceding substrate - is provided.
  • the present invention is directed to a method and a controller that allow the control of a CMP process by manipulating a process parameter that is readily accessible, whereby the process-specific characteristics are described by an empirically determined parameter whose accuracy is, however, not critical for the proper control function.
  • the embodiments described so far and the embodiments that will be described in the following are based on the finding that it is possible to maintain dishing and erosion of material layers in a substrate, such as metallization layers, within tightly set tolerances by appropriately adjusting the overpolish time in a CMP process.
  • the overpolish time indicates that time period for which the CMP process in continued after a measurement has indicated that the material is removed at a predefined region on the substrate.
  • the process of detecting the clearance of a specified region is also referred to as endpoint detection and is usually employed in CMP processes used for manufacturing metallization layers.
  • the CMP process for damascene metallization layers in high-end integrated circuits in often designed as a multi-step process, where, for example, as the last stop of the process, after the metal is removed, polishing operations are performed on the dielectric layer. Accordingly, by adjusting the process time of the final polishing step, the degree of erosion and dishing may be controlled.
  • the inventors suggest a linear model of the CMP process that is based on the erosion and/or the dishing and/or layer thickness of a previous metallization layer of the same and a preceding substrate.
  • the process inherent mechanisms are expressed by two or more sensitivity parameters, which may be determined by experiment and/or calculation and experiment, wherein in some embodiments, the accuracy of the sensitivity parameters is not critical for a successful control operation due to a "self-consistent" design of the control function.
  • sensitivity parameters which may be determined by experiment and/or calculation and experiment, wherein in some embodiments, the accuracy of the sensitivity parameters is not critical for a successful control operation due to a "self-consistent" design of the control function.
  • FIG. 1 a schematic view of a CMP system 100 is depicted, the system 100 comprising a CMP tool 110, a metrology tool 130 and a CMP controller 150.
  • the CMP tool 110 includes an input portion 111 for receiving the substrate to be processed and an output portion 112 for receiving and storing substrates after the CMP process is completed.
  • the CMP tool 110 further comprises a process chamber 113 including three polishing platens 114, 115 and 116, which are also referred to as platen I, platen II, and platen III, respectively.
  • a pad conditioner 117 At each of the platens 114, 115, and 116, a pad conditioner 117, a slurry supply 118 and a polishing head 119 are provided.
  • a measurement means 120 is arranged and configured to detect the endpoint of a CMP process.
  • any further means required for conveying substrates from the input portion 111 to platen I, or from platen I to platen II, and so on, as well as any means for feeding gases, liquids, such as water, slurry, and the like, are not depicted in the drawing.
  • a substrate 121 which comprises one or more metallization layers, is attached to the polishing head of platen I.
  • the substrate 121 represents a "current" substrate for which a manipulated variable of the control process to be described will be established, that is, the manipulated variable represents a process parameter whose value is varied so as to obtain the desired value of a control variable, such as dishing, erosion and the final layer thickness.
  • a metallization layer of the substrate 121 that is to be immediately treated by the CMP tool 110 is also referred to as a first metallization layer, whereas any metallization layer of the substrate 121 underlying the first metallization layer and already subjected to the CMP process is referred to as a second metallization layer.
  • any substrate that has already been subjected to CMP is referred to as a preceding substrate and the metallization layers of the preceding substrate corresponding to the metallization layers of the current substrate 121 are also referred to as first and second metallization layers, as in the current substrate 121.
  • the substrate 121 After the substrate 121 has completed the CMP process on platen I with predefined process parameters such as a predefined slurry composition, predefined relative movement between the polishing head 119 and the platen 114, duration of the CMP process, and the like, the substrate 121 is passed to platen II for a second CMP step, possibly with different process parameters, until the measurement device 120 indicates that the end of the process is reached. As previously explained, and as will be discussed in detail with reference to Figure 2, the polishing of the substrate 121 is continued on platen II for an overpolish time T op that is determined by the controller 150.
  • predefined process parameters such as a predefined slurry composition, predefined relative movement between the polishing head 119 and the platen 114, duration of the CMP process, and the like.
  • the substrate 121 is conveyed to platen III, where polishing of the insulating material of the first metallization layer is carried out with appropriate process parameters, such as slurry composition, relative movement between the platen 116 and the polishing head 119, bearing pressure applied to the substrate 121, and the like.
  • process parameters such as slurry composition, relative movement between the platen 116 and the polishing head 119, bearing pressure applied to the substrate 121, and the like.
  • the process time at platen III also referred to as T III
  • the substrate 121 is conveyed to the output portion 112 and possibly to the metrology tool 130, at which measurement results are obtained related to the first metallization layer, such as layer thickness, erosion and dishing.
  • the layer thickness, erosion and dishing will be considered as control variables of the CMP process, whereas T op and/or T III will act as manipulated variables.
  • T op and/or T III will act as manipulated variables.
  • the measurement results of the control variables are obtained by well-known optical measurement techniques and the description thereof will therefore be omitted.
  • sensitivity parameters are determined which, in one embodiment, are obtained by experiment on the basis of previously processed test substrates or product substrates.
  • a first sensitivity parameter ⁇ is thereby determined and describes the effect of the overpolish time T op on the control variable, e.g ., the degree of erosion, dishing, metallization layer thickness, and the like.
  • a second sensitivity parameter ⁇ may also be determined specifying the influence of polish time T III of the CMP process performed on platen III on the control variable.
  • a third sensitivity parameter ⁇ is determined that quantitatively describes how the control variable of a preceding metallization layer, for example the dishing and/or erosion of the preceding layer, which will also be referred to as the second metallization layer as previously noted, influences the control variable of the current, i.e., the first metallization layer.
  • the sensitivity parameters ⁇ and ⁇ include the inherent CMP mechanisms, such as the removal rate, and thus may vary during the actual CMP process owing to, for example, degradation of the polishing pad, saturation of the slurry, and the like.
  • the sensitivity parameters ⁇ and ⁇ may be selected so as to depend on time, i.e., on the number of substrates that have already been processed or that are to be processed.
  • step 220 intermediate values for the manipulated variables (referred to as T * / op , T * / III ) are calculated from a linear CMP model.
  • a linear model is to be understood as a mathematical expression describing the relationship of various variables, such as the manipulated variables T op , T III and the control variables, wherein the variables appear as linear terms without any higher order terms such as T 2 / op , T 3 / op , etc.
  • step 220 is sub-divided into a first sub-step 221, depicting a linear model of the CMP process.
  • E first the control variable of the first metallization layer
  • a control variable may represent any one of erosion, dishing, metallization layer thickness and the like
  • the sign of ⁇ is selected as positive, whereas the sign of ⁇ is selected to be negative.
  • the magnitude and sign of ⁇ is determined by experiment.
  • a single manipulated variable, such as T op may be used to control the entire CMP process in cases where no final CMP step on platen III is used.
  • the parameters ⁇ and ⁇ may be selected as time-dependent parameters or, more appropriately, as parameters depending on the number of substrates to be processed.
  • the general tendency of degradation of the polishing pad, the slurry composition and the like may be taken into account so that systematic variations in ⁇ and/or ⁇ may be compensated for. That is, a systematic reduction of the polishing rate over time may be taken into account by correspondingly increasing ⁇ and/or decreasing ⁇ as the number of processed substrates increases.
  • intermediate values for the manipulated variables overpolish time and polish time on platen III are obtained in correspondence with the model of step 221.
  • the reason for determining the intermediate variables T * / op , T * / III resides in the fact that the control operation should "smooth" any short fluctuations in the CMP process and should respond to measurement results of previously processed substrates in a "soft” manner without showing excessive undershootings and overshootings. This behavior of the control operation may be convenient when only a small number of measurement results per substrate is available so that the measurement results from one preceding substrate to another preceding substrate may show a significant fluctuation.
  • the measurement result representing, for example, E p,first is obtained by a single measurement of a predefined single location on the preceding substrate.
  • the intermediate manipulated variables T * / op and T * / III are determined prior to the actual manipulated variables Top, T III .
  • T * / op and T * / III are calculated for the case: E p,firsf + ⁇ ( E sec ond - E p, sec ond ) ⁇ E t arg et That means the erosion and/or dishing and/or layer thickness, depending on what E actually represents, of the first metallization layer of the preceding substrate and the effect of the erosions of the second metallization layer of the current substrate and the preceding substrate result in a smaller erosion and/or dishing and/or layer thickness than desired.
  • the overpolish time for the current substrate has to be equal or larger than the overpolish time of the preceding substrate and the polish time on platen III has to be equal or less than the polish time of the preceding substrate.
  • a maximum and a minimum overpolish time T op , T op and a maximum and a minimum polish time on platen III T III , T III may be set in advance, corresponding to process requirements. These limits for the overpolish time and the platen III polish time may be determined by experiment or experience.
  • the maximum and minimum overpolish times T op , T op respectively, may be selected to approximately 30 seconds and 5 seconds, respectively.
  • the maximum and minimum polish times on platen III T III , T III , respectively, may be selected to approximately 120 seconds and 20 seconds, respectively.
  • the overpolish time Top and the platen III polish time T III are simultaneously used as manipulated variables, it is desirable to determine the intermediate values T * / op and T * / III such that the values are well within the allowable ranges given by the minimum and maximum overpolish times and platen III polish times, respectively.
  • T * / op and T * / III are calculated for the case: E p,first + ⁇ ( E sec ond - E p, sec ond ) > E T arg et
  • the intermediate overpolish time has to be selected equal or less to the overpolish time of the preceding substrate and the intermediate platen III polish time has to be selected equal or greater than the platen III polish time of the preceding substrate.
  • the intermediate polish times are determined such that the values are centered around the middle of the allowable ranges while, at the same time, fulfilling the secondary conditions (5) and (6), i.e., the intermediate polish times must yield to the desired erosion E target and must also obey the conditions (4) and (8).
  • the secondary conditions (4) and (8) ensure that any shift of T * / op is not compensated by a corresponding change of the platen III polish time.
  • a corresponding behavior might possibly lead to a simpler solution in determining the minimal values according to (6), but could, however, result in a control operation in the wrong direction for inaccurate parameters ⁇ and ⁇ and thus destabilize the control function.
  • the weighting factor in determining the minimal value in the expression (6) may be selected as:
  • the weighting factor w may also be determined on an empirical basis.
  • the determination of the intermediate values by calculating the minimum values is not required when merely one manipulated variable, for example the overpolish time T op , is used.
  • step 230 the actual output values for the overpolish time and the platen III polish time are calculated from the intermediate overpolish time and the intermediate platen III polish time and the overpolish time and platen III polish time of the preceding substrate. This ensures, depending on the algorithm used, a relatively smooth adaptation of the overpolish time and the platen III polish time to the "evolution" of the overpolish time and the platen III polish time of preceding substrates.
  • one illustrative embodiment is shown for obtaining the overpolish time and the platen III polish time in step 230.
  • a first sub-step 231 it may be checked whether or not T * / op and/or T * / III are within predefined ranges that may be different from the ranges defined by the minimum and maximum overpolish times and platen III polish times.
  • predefined ranges it may be detected whether or not there is a tendency that the control operation systematically moves out of a well-defined range indicating that the parameters ⁇ and ⁇ , and thus the CMP conditions, have changed significantly.
  • sub-step 232 it may be indicated that the linear model of the CMP process is no longer valid or may become invalid in the "near future" of the CMP process run under consideration. This indication is to be taken as evidence that any unforeseen change of the CMP inherent mechanisms has taken place. It is to be noted that the sub-step 231 is optional and may be omitted.
  • the overpolish time and the platen III polish time are calculated by means of a weighted moving average from the overpolish time of the preceding substrate and the intermediate overpolish time T * / op
  • the platen III polish time is calculated as a weighted moving average from the platen III polish time of the preceding substrate and the intermediate platen III polish time T * / III .
  • the "speed" of adaptation of the control swing with respect to the foregoing development of the overpolish times may be adjusted.
  • a value for ⁇ and ⁇ close to 1 results in an immediate response of the overpolish time and the platen III polish time when, for example, a measurement result of the preceding substrate indicates a relatively large deviation from the command value E target .
  • EWMA exponentially weighted moving average
  • step 240 the overpolish time and the platen III time calculated in step 230 are transmitted to the CMP tool 110 in Figure 1 to adjust the corresponding process times of the substrate 121 that is currently processed.
  • step 250 the substrate is conveyed to the metrology tool 130 to obtain measurement values for the control variable. These measurement results may then serve as E second , E p,second E p for the calculation for a following substrate.
  • E second , E p,second E p the measurement results
  • the substrate currently to be processed and the preceding substrate are referred to as single substrates, but, in one illustrative embodiment, the current substrate and the preceding substrate may represent a plurality of substrates, such as a lot of substrates, wherein the control variables E first, E p,first , E second , E p,second and the manipulated variables T op and T III represent the mean values for the corresponding plurality of substrates.
  • a corresponding arrangement has been proven to be particularly useful in production lines in which an already well-established CMP process is installed and the deviation from substrate to substrate within a defined plurality is well within the acceptable process parameters. Accordingly, process control can be carried out on a lot-to-lot basis for a large number of substrates in a simple, yet efficient manner.
  • the controller 150 performing a control operation comprises an input section 151, a calculation section 152 and an output section 153, wherein the input section 151 is operatively connected to the metrology tool 130 and the output section 153 is operatively connected to the CMP tool 110.
  • the metrology tool 130 and the controller 150 are implemented as inline equipment so as to minimize transportation of the substrates and accelerate input of measurement results into the input section 151.
  • the metrology tool 130 and/or the controller 150 may be provided outside the production line.
  • the controller 150 may be implemented as a single chip microprocessor, as a microcontroller having inputs to which analogous or digital signals may directly be supplied from the metrology tool 130, or may be part of an external computer, such as a PC or a work station, or it may be a part of a management system in the factory as is commonly used in semiconductor fabrication.
  • the calculation steps 220 and 230 may be performed by any numerical algorithms including an analytical approach for solving the involved equations, fuzzy logic, use of parameters in tables, especially for the EWMA, and corresponding operation codes may be installed in the controller 150.
  • the above-described embodiments may easily be adapted to any known CMP tool since it is only necessary to obtain the sensitivity parameters ⁇ and/or ⁇ , which describe the inherent properties of the corresponding CMP tool and the basic CMP process performed on this tool.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
EP02798618A 2002-02-26 2002-12-20 Method and system for controlling the chemical mechanical polishing of substrates by calculating an overpolishing time and/or a polishing time of a final polishing step Expired - Lifetime EP1478494B1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US261612 1981-05-08
DE10208165 2002-02-26
DE10208165A DE10208165C1 (de) 2002-02-26 2002-02-26 Verfahren, Steuerung und Vorrichtung zum Steuern des chemisch-mechanischen Polierens von Substraten
US10/261,612 US7268000B2 (en) 2002-02-26 2002-09-30 Method and system for controlling the chemical mechanical polishing of substrates by calculating an overpolishing time and/or a polishing time of a final polishing step
PCT/US2002/041668 WO2003072305A1 (en) 2002-02-26 2002-12-20 Method and system for controlling the chemical mechanical polishing of substrates by calculating an overpolishing time and/or a polishing time of a final polishing step

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EP1478494A1 EP1478494A1 (en) 2004-11-24
EP1478494B1 true EP1478494B1 (en) 2005-10-12

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CN (1) CN100366386C (zh)
AU (1) AU2002364041A1 (zh)
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WO (1) WO2003072305A1 (zh)

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DE102005000645B4 (de) * 2004-01-12 2010-08-05 Samsung Electronics Co., Ltd., Suwon Vorrichtung und ein Verfahren zum Behandeln von Substraten
US7542880B2 (en) * 2006-04-06 2009-06-02 Advanced Micro Devices, Inc. Time weighted moving average filter
CN105563301B (zh) * 2014-10-14 2017-11-21 中芯国际集成电路制造(上海)有限公司 化学机械抛光方法、其抛光时间制程的设置方法及晶圆
CN105700468B (zh) * 2016-01-13 2018-02-27 新维畅想数字科技（北京）有限公司 一种通过增量预计算优化三维雕刻损耗的方法
CN106312792B (zh) * 2016-11-09 2018-06-26 上海华力微电子有限公司 一种动态调整安全研磨时间限的方法
AU2021293507A1 (en) 2020-06-18 2023-02-02 F. Hoffmann-La Roche Ag Treatment with anti-TIGIT antibodies and PD-1 axis binding antagonists
CN112233975B (zh) * 2020-09-04 2024-02-09 北京晶亦精微科技股份有限公司 一种研磨时间控制方法、装置、设备及可读存储介质
CN113192829B (zh) * 2021-05-13 2023-04-18 上海芯物科技有限公司 动态调整晶片抛光时间的方法、装置、设备和存储介质
WO2023010094A2 (en) 2021-07-28 2023-02-02 Genentech, Inc. Methods and compositions for treating cancer
WO2023056403A1 (en) 2021-09-30 2023-04-06 Genentech, Inc. Methods for treatment of hematologic cancers using anti-tigit antibodies, anti-cd38 antibodies, and pd-1 axis binding antagonists
WO2023240058A2 (en) 2022-06-07 2023-12-14 Genentech, Inc. Prognostic and therapeutic methods for cancer

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US5880007A (en) * 1997-09-30 1999-03-09 Siemens Aktiengesellschaft Planarization of a non-conformal device layer in semiconductor fabrication
US6230069B1 (en) * 1998-06-26 2001-05-08 Advanced Micro Devices, Inc. System and method for controlling the manufacture of discrete parts in semiconductor fabrication using model predictive control
US6506097B1 (en) * 2000-01-18 2003-01-14 Applied Materials, Inc. Optical monitoring in a two-step chemical mechanical polishing process

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CN1620357A (zh) 2005-05-25
WO2003072305A1 (en) 2003-09-04
TWI267156B (en) 2006-11-21
EP1478494A1 (en) 2004-11-24
TW200305240A (en) 2003-10-16
AU2002364041A1 (en) 2003-09-09

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