EP1471539B1 - Sytème d'imagerie pour un microscope à base de rayonnement extrême ultraviolet (EUV) - Google Patents

Sytème d'imagerie pour un microscope à base de rayonnement extrême ultraviolet (EUV) Download PDF

Info

Publication number
EP1471539B1
EP1471539B1 EP03016371A EP03016371A EP1471539B1 EP 1471539 B1 EP1471539 B1 EP 1471539B1 EP 03016371 A EP03016371 A EP 03016371A EP 03016371 A EP03016371 A EP 03016371A EP 1471539 B1 EP1471539 B1 EP 1471539B1
Authority
EP
European Patent Office
Prior art keywords
reflective
imaging system
imaging
diffractive
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP03016371A
Other languages
German (de)
English (en)
Other versions
EP1471539A1 (fr
Inventor
Hans-Jürgen DOBSCHAL
Jörn Greif-Wüstenbecker
Robert Brunner
Norbert Rosenkranz
Thomas SCHERÜBL
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss Microelectronic Systems GmbH
Original Assignee
Carl Zeiss Microelectronic Systems GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Microelectronic Systems GmbH filed Critical Carl Zeiss Microelectronic Systems GmbH
Publication of EP1471539A1 publication Critical patent/EP1471539A1/fr
Application granted granted Critical
Publication of EP1471539B1 publication Critical patent/EP1471539B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K7/00—Gamma- or X-ray microscopes

Definitions

  • the present invention relates to a reflective imaging system for an X-ray microscope for examining an object in an object plane, wherein the object is illuminated with rays of a wavelength ⁇ 100 nm, in particular ⁇ 30 nm and magnified in an image plane.
  • the microscopic examination of objects with X-rays is becoming increasingly important, especially in the semiconductor industry. Smaller structure sizes consequently require ever higher resolutions, which can only be achieved by shortening the examination wavelength. This is especially important in the microscopic inspection of masks for the lithographic process.
  • the lithography with extreme ultraviolet (EUV) radiation represents the most promising solution for the chip production in the next years.
  • US Patents US 5,144,497, US 5,291,339 and US 5,131,023 relate to X-ray microscopes in which Schwarzschild systems are used as imaging systems. In these X-ray microscopes, the beam paths are designed to be telecentric on the object to be examined, which makes it difficult to image objects in reflection.
  • a further disadvantage of such systems for use in the examination of objects, in particular those which are used in the field of X-ray lithography, is their great structural length in order to achieve a sufficient magnification. This complicates use, for example, in inspection systems for inspecting masks in EUV projection exposure equipment.
  • a reflective X-ray microscope for investigating an object for microlithography in an object plane with radiation of a wavelength ⁇ 100 nm, in particular ⁇ 30 nm, is known from JP 2001116900.
  • This in X-ray microscope disclosed in this application is a Schwarzschild system with a concave first mirror and a convex second mirror.
  • the beam path for the examination of the object on the object is not telecentric, so that a study in reflection, for example of EUV reflection masks, is made possible.
  • a disadvantage of this system is the very large length to achieve large imaging scales.
  • Another X-ray microscopic arrangement is described for example in the applications DE 102 20 815 and DE 102 20 816.
  • the imaging optics is designed as a purely reflective system and optimized in terms of short length at high magnifications. This will u. a. achieved by using highly aspheric mirrors.
  • a disadvantage of these arrangements is that the manufacturing tolerances for the aspherical mirror to achieve a high image quality are extremely demanding and therefore high demands are placed on the manufacturing technology and measurement technology.
  • the present invention has for its object to develop an imaging system for an X-ray microscope, which avoids the disadvantages known in the prior art. Furthermore, it should be achieved with a reasonable production cost high image quality.
  • the proposed imaging system includes all optical elements associated with an imaging optic and generates a corresponding intermediate image by the extreme ultraviolet (EUV) radiation. This can be further processed by further imaging systems, ie further increased.
  • EUV extreme ultraviolet
  • the imaging system according to the invention can be used for example in photolithography.
  • a diffractive-reflective structure in the form of a line structure.
  • the diffractive-reflective structure is applied to a spherical or planar base surface of one or both imaging optical elements 2 and 3 . Concave or convex curvatures are possible as a spherical base.
  • a further imaging system is subordinated to the first imaging system.
  • the second imaging system can be based on an X-ray image, an electro-optical image or an image that uses a radiation above 200 nm.
  • the second imaging system can also be another imaging optical element with a spherically convex base surface without a diffractive structure.
  • the imaging system according to the invention is preferably provided for wavelengths in the range of less than 30 nm, at a magnification of 5-1000 ⁇ and a length less than 3 m.
  • the imaging system has two imaging optical elements 2 and 3 each having a diffractive-reflective structure, the first imaging optical element 2 having a concave base surface and the second imaging optical element 3 having a convex base surface for the respective diffractive reflective surface. have reflective structure.
  • the imaging optical elements 2 and 3 are arranged so that the optical paths intersect one another.
  • the optical axis of the imaging system is inclined to the object normal.
  • the imaging optical elements 2 and 3 can also be arranged so that the optical paths do not intersect.
  • the imaging system according to the invention can be used as the basis for an inspection system for lithographic masks.
  • the work focuses on wavelengths around 13.5nm, because only here efficient optics for the required exposure systems can be produced.
  • the first imaging optical element 2 with spherically concave base surface has, for example, a diffractive-reflective structure with approximately 240 lines / mm
  • the second imaging optical element 3 with a spherically convex base surface has a diffractive-reflective structure with approximately 660 lines / mm.
  • the imaging optical elements 2 and 3 are arranged so that the optical paths intersect once.
  • FIG. 1 and FIG. 2 (enlarged detail), the corresponding beam paths in the imaging system, starting from the object 1 to be examined, via the imaging optical elements 2 and 3 , up to the intermediate image 4 produced, are shown.
  • the illustrated beam path relates to an imaging system for an extreme ultraviolet (EUV) radiation based microscope or a corresponding inspection system for lithographic masks.
  • EUV extreme ultraviolet
  • FIG. 4 shows the schematic overall view of an inspection system for lithographic masks based on EUV radiation.
  • EUV radiation In contrast to UV radiation, EUV radiation is absorbed very strongly in almost all materials. Since the absorption length in air at atmospheric pressure is well below 1 mm, the EUV radiation can propagate almost loss-free only in vacuum over the distances required for EUV lithography.
  • the EUV radiation is focused by the illumination optics 6 onto the object 1.
  • the reflected from the object 1 EUV radiation is focused by the imaging optics 7 as an intermediate image 4 on a transducer layer.
  • the subsystem according to the invention, starting from the object plane 1 to the intermediate image 4 , on the transducer layer is also referred to as the first subsystem and is based entirely on the EUV radiation.
  • the intermediate image 4 thus produced can be further enlarged, for example, by a second subsystem.
  • the second subsystem can be based on both the EUV radiation and a different wavelength.
  • the EUV radiation is converted, for example, in VIS radiation.
  • This VIS radiation is imaged onto a camera chip 9 by a further imaging optics 8 which is used as a second subsystem and which is simultaneously designed as a window of the vacuum chamber 10 .
  • the camera chip 9 is used to control the irradiation.
  • an imaging system is provided which avoids the disadvantages known in the prior art and ensures a high imaging quality.
  • the production costs remain justifiable by the exclusive use of spherical mirrors.
  • the Römgenmikroskopie in Verfanren such as the so-called AIMS (Aenai Imaging Measurement).
  • AIMS Azai Imaging Measurement
  • the lithography stepper is simulated by a less expensive and simpler microscopic arrangement. It is important that the image with the same wavelength of z. B. 13.5nm, the same lighting conditions and the same image quality as an EUV stepper is generated. In contrast to the stepper but the image field with about 10 ⁇ m instead of several mm is much smaller. Another difference is that the mask is typically imaged 10 to 1000 times larger on a camera.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Studio Devices (AREA)

Claims (6)

  1. Système d'imagerie réfléchissant pour un microscope à base de rayonnement extrême ultraviolet (EUV) avec des longueurs d'ondes dans la plage de < 100 nm, avec une réduction respectivement un agrandissement de 0,1-1000x et une longueur de construction <5m, dans lequel au moins un de plusieurs éléments optiques de représentation, présents dans le trajet des rayons, présente une structure de diffraction-réflexion sous la forme d'une structure de lignes.
  2. Système d'imagerie réfléchissant selon la revendication 1, où la structure de diffraction-réflexion est appliquée sur une face de base sphérique ou plane et présente une forme asymétrique, non symétrique en rotation.
  3. Système d'imagerie réfléchissant selon la revendication 1 et 2, où les faces de base sphériques sont concaves ou convexes.
  4. Système d'imagerie réfléchissant selon au moins l'une des revendications précédentes, dans lequel deux éléments optiques de représentation sont dotés chacun d'une structure de diffraction-réflexion, où le premier élément optique de représentation présente une face de base sphérique concave et le second élément optique de représentation une face de base sphérique convexe pour la structure de diffraction-réflexion respective.
  5. Système d'imagerie réfléchissant selon au moins l'une des revendications précédentes, dans lequel les éléments optiques de représentation sont disposés de façon que les chemins optiques se croisent au moins une fois.
  6. Système d'inspection pour des masques de lithographie basé sur un système d'imagerie réfléchissant selon au moins l'une des revendications précédentes, dans lequel un premier élément optique de représentation, à face de base sphérique concave, présente une structure à effet de diffraction-réflexion avec environ 240 lignes/mm, et un second élément optique de représentation, à face de base sphérique convexe, une structure à effet de diffraction-réflexion avec environ 660 lignes/mm, et dans lequel les chemins optiques se croisent une fois.
EP03016371A 2003-04-25 2003-07-19 Sytème d'imagerie pour un microscope à base de rayonnement extrême ultraviolet (EUV) Expired - Lifetime EP1471539B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10319269A DE10319269A1 (de) 2003-04-25 2003-04-25 Abbildungssystem für ein, auf extrem ultravioletter (EUV) Strahlung basierendem Mikroskop
DE10319269 2003-04-25

Publications (2)

Publication Number Publication Date
EP1471539A1 EP1471539A1 (fr) 2004-10-27
EP1471539B1 true EP1471539B1 (fr) 2006-08-23

Family

ID=32946454

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03016371A Expired - Lifetime EP1471539B1 (fr) 2003-04-25 2003-07-19 Sytème d'imagerie pour un microscope à base de rayonnement extrême ultraviolet (EUV)

Country Status (4)

Country Link
US (1) US6894837B2 (fr)
EP (1) EP1471539B1 (fr)
AT (1) ATE337605T1 (fr)
DE (2) DE10319269A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4639352B2 (ja) * 2002-05-10 2011-02-23 カール・ツァイス・エスエムティー・ゲーエムベーハー 波長≦１００ｎｍで物体を検査する検査系
DE102008015996A1 (de) * 2008-03-27 2009-10-01 Carl Zeiss Sms Gmbh Mikroskop und Mikroskopierverfahren zur Untersuchung eines reflektierenden Objektes
DE102010029050A1 (de) 2010-05-18 2011-03-31 Carl Zeiss Smt Gmbh Vergrößernde abbildende Optik sowie Metrologiesystem mit einer derartigen abbildenden Optik
DE102011081914A1 (de) 2011-08-31 2012-09-06 Carl Zeiss Smt Gmbh Beleuchtungsoptik zur Beleuchtung eines in einem Objektfeld anordenbaren, strukturierten Objektes
DE102013211269A1 (de) 2013-06-17 2014-04-30 Carl Zeiss Smt Gmbh Beleuchtungsoptik zur Beleuchtung eines in einem Objektfeld anordenbaren, strukturierten Objektes sowie Metrologiesystem für die Untersuchung eines strukturierten Objektes
DE102019124919B4 (de) 2019-09-17 2021-08-26 Ri Research Instruments Gmbh Mikroskopisches System zur Prüfung von Strukturen und Defekten auf EUV-Lithographie-Photomasken

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210299A (ja) 1989-02-10 1990-08-21 Olympus Optical Co Ltd Ｘ線用光学系及びそれに用いる多層膜反射鏡
JP2865257B2 (ja) 1989-03-07 1999-03-08 オリンパス光学工業株式会社 シュヴアルツシルド光学系
JP2945431B2 (ja) 1990-03-01 1999-09-06 オリンパス光学工業株式会社 結像型ｘ線顕微鏡
JP2921038B2 (ja) 1990-06-01 1999-07-19 キヤノン株式会社 Ｘ線を用いた観察装置
DE4027285A1 (de) 1990-08-29 1992-03-05 Zeiss Carl Fa Roentgenmikroskop
US5291339A (en) 1990-11-30 1994-03-01 Olympus Optical Co., Ltd. Schwarzschild optical system
JPH04353800A (ja) 1991-05-31 1992-12-08 Olympus Optical Co Ltd 軟ｘ線顕微鏡
US5177774A (en) 1991-08-23 1993-01-05 Trustees Of Princeton University Reflection soft X-ray microscope and method
US5384817A (en) * 1993-07-12 1995-01-24 Ovonic Synthetic Materials Company X-ray optical element and method for its manufacture
JP2690036B2 (ja) * 1995-03-23 1997-12-10 工業技術院長 Ｘ線分光集光素子
JP3167095B2 (ja) * 1995-07-04 2001-05-14 キヤノン株式会社 照明装置とこれを有する露光装置や顕微鏡装置、ならびにデバイス生産方法
US6469827B1 (en) 1998-08-06 2002-10-22 Euv Llc Diffraction spectral filter for use in extreme-UV lithography condenser
US6118577A (en) * 1998-08-06 2000-09-12 Euv, L.L.C Diffractive element in extreme-UV lithography condenser
JP4374735B2 (ja) * 1999-08-11 2009-12-02 株式会社ニコン 反射型軟ｘ線顕微鏡、マスク検査装置及び反射マスクの製造方法
DE10130212A1 (de) 2001-06-22 2003-01-02 Zeiss Carl Jena Gmbh Objektiv
DE10220816A1 (de) 2002-05-10 2003-11-20 Zeiss Carl Microelectronic Sys Reflektives Röntgenmikroskop und Inspektionssystem zur Untersuchung von Objekten mit Wellenlängen 100 nm
DE10220815A1 (de) 2002-05-10 2003-11-20 Zeiss Carl Microelectronic Sys Reflektives Röntgenmikroskop und Inspektionssystem zur Untersuchung von Objekten mit Wellenlängen 100 nm
US6801298B2 (en) * 2002-07-25 2004-10-05 Intel Corporation Light condenser

Also Published As

Publication number Publication date
DE50304739D1 (de) 2006-10-05
EP1471539A1 (fr) 2004-10-27
US20040212891A1 (en) 2004-10-28
US6894837B2 (en) 2005-05-17
DE10319269A1 (de) 2004-11-25
ATE337605T1 (de) 2006-09-15

Similar Documents

Publication Publication Date Title
DE102008046699B4 (de) Abbildende Optik
EP1480082B1 (fr) Système de quatre miroirs à champ annulaire pour lithographie EUV
EP1035445B1 (fr) Objectif de réduction pour la microlithographie et appareil d&#39; exposition par projection
DE60208045T2 (de) Objektiv mit pupillenverdeckung
EP1446813B1 (fr) Microscope aux rayons x reflechissant concus pour examiner des objets presentant des longueurs d&#39;onde = 100nm en reflexion
WO2016012425A9 (fr) Optique de reproduction pour système météorologique
EP1950594A1 (fr) Système optique, installation d&#39;éclairage à projection pour la microlithographie dotée d&#39;une telle système optique, procédé de fabrication d&#39;un composant microstructuré à l&#39;aide d&#39;une telle installation d&#39;éclairage à projection, composant microstructuré fabriqué selon ce procédé de fabrication, ainsi qu&#39;utilisation d&#39;une telle système optique
WO2016188934A1 (fr) Optique de représentation pour représenter un champ d&#39;objet dans un champ d&#39;image et système d&#39;éclairage par projection pourvu d&#39;une optique de représentation de ce type
DE102009035583A1 (de) Vergrößernde abbildende Optik sowie Metrologiesystem mit einer derartigen abbildenden Optik
EP1282011A2 (fr) Lentille de projection réflective pour la photolithographie dans l&#39;ultraviolet extrême
EP1845417B1 (fr) Système d&#39;éclairage doté d&#39;un objectif à zoom
DE10052289A1 (de) 8-Spiegel-Mikrolithographie-Projektionsobjektiv
DE102008043162A1 (de) Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik
DE102007051671A1 (de) Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik
EP1102100A2 (fr) Objectif catadioptrique avec diviseur de faisceau
DE102013224435A1 (de) Messanordnung zur Messung optischer Eigenschaften eines reflektiven optischen Elements, insbesondere für die Mikrolithographie
EP1471539B1 (fr) Sytème d&#39;imagerie pour un microscope à base de rayonnement extrême ultraviolet (EUV)
DE102011076658A1 (de) Beleuchtungsoptik für die EUV-Projektionslithographie
EP1037115B1 (fr) Objectif de projection microlithographique et appareil d&#39; exposition par projection
DE102022206110A1 (de) Abbildende EUV-Optik zur Abbildung eines Objektfeldes in ein Bildfeld
DE102011084255A1 (de) Vergrößernde abbildende Optik sowie Metrologiesystem mit einer derartigen abbildenden Optik
WO2009135556A1 (fr) Optique de projection pour la microlithographie comportant un dispositif de correction d&#39;intensité
DE102006047387A1 (de) Kompaktes 3-Spiegel-Objektiv
DE102021201257A1 (de) Verfahren und Vorrichtung zur Bestimmung eines Spektrums einer Strahlung, Computerprogrammprodukt und Lithografiesystem
DE102021205149B3 (de) Verfahren und Vorrichtung zur Qualifizierung eines Facettenspiegels

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20030719

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK

AKX Designation fees paid

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

17Q First examination report despatched

Effective date: 20050704

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

RIN1 Information on inventor provided before grant (corrected)

Inventor name: DOBSCHAL, HANS-JUERGEN

Inventor name: BRUNNER, ROBERT

Inventor name: GREIF-WUESTENBECKER, JOERN

Inventor name: ROSENKRANZ, NORBERT

Inventor name: SCHERUEBL, THOMAS

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.

Effective date: 20060823

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060823

Ref country code: IE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060823

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060823

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060823

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060823

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060823

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060823

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

Free format text: NOT ENGLISH

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

Free format text: LANGUAGE OF EP DOCUMENT: GERMAN

REF Corresponds to:

Ref document number: 50304739

Country of ref document: DE

Date of ref document: 20061005

Kind code of ref document: P

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20061123

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20061123

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20061123

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20061204

GBT Gb: translation of ep patent filed (gb section 77(6)(a)/1977)

Effective date: 20061207

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20070125

NLV1 Nl: lapsed or annulled due to failure to fulfill the requirements of art. 29p and 29m of the patents act
REG Reference to a national code

Ref country code: FR

Ref legal event code: CD

REG Reference to a national code

Ref country code: IE

Ref legal event code: FD4D

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20070524

BERE Be: lapsed

Owner name: CARL ZEISS MICROELECTRONIC SYSTEMS G.M.B.H.

Effective date: 20070731

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20070731

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20061124

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20070731

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20070731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060823

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20070731

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20080731

Year of fee payment: 6

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20070719

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20080723

Year of fee payment: 6

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20070719

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060823

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20070224

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20060823

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20090719

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20100331

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20090731

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20080428

Year of fee payment: 6

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20090719

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20100202