EP1425784A1 - Procede de production de couches a semi-conducteurs a base de semi-conducteurs au nitrure iii-v - Google Patents

Procede de production de couches a semi-conducteurs a base de semi-conducteurs au nitrure iii-v

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Publication number
EP1425784A1
EP1425784A1 EP02760146A EP02760146A EP1425784A1 EP 1425784 A1 EP1425784 A1 EP 1425784A1 EP 02760146 A EP02760146 A EP 02760146A EP 02760146 A EP02760146 A EP 02760146A EP 1425784 A1 EP1425784 A1 EP 1425784A1
Authority
EP
European Patent Office
Prior art keywords
iii
substrate
semiconductor layer
masked areas
nitride semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02760146A
Other languages
German (de)
English (en)
Inventor
Hans-Juergen Lugauer
Stefan Bader
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP1425784A1 publication Critical patent/EP1425784A1/fr
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02472—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02642—Mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

Definitions

  • the present invention relates to a method for producing semiconductor layers based on III-V nitride semiconductors and in particular of low-defect semiconductor layers based on III-V nitride semiconductors.
  • III-V nitride semiconductors includes the materials derived from GaN or related to GaN as well as materials based thereon, for example ternary or quaternary mixed crystals.
  • this includes the materials AlN, InN, AlGaN (Al ⁇ _ x Ga x N, O ⁇ x ⁇ l), InGaN
  • III-V nitride semiconductor refers to the group of materials described above. Furthermore, this designation includes materials that are used to form buffer layers in the epitaxial production of layers of the material systems mentioned.
  • III-V nitride semiconductor layers III-V nitride semiconductor layers
  • substrate material which can be produced in particular with economically justifiable technical effort, is not available.
  • semiconductor layers based on III-V nitride semiconductors on substrates such as sapphire, spinel or silicon carbide. grow, which, however, have a different lattice constant compared to III-V nitride semiconductors.
  • dislocations When using sapphire, SiC and similar substrates with different lattice constants, dislocations with a density of approximately 10 8 to 10 10 cm 2 arise in the epitaxial layer. Charge dislocations can recombine at such dislocations and are thus, for example, used to generate light LEDs are no longer available.
  • ELOG process is therefore proposed, for example, for producing low-defect III-V nitride semiconductor layers.
  • a mask layer is first applied to a substrate in order to
  • the mask layer consists of a material that substantially does not allow crystal growth of a semiconductor layer based on III-V nitride semiconductor.
  • a semiconductor layer based on III-V nitride semiconductor is grown epitaxially on the unmasked regions of the substrate. As soon as the thickness of the III-V nitride semiconductor layer on the unmasked regions of the substrate exceeds the thickness of the mask layer, the III-V nitride semiconductor layer begins to grow together laterally over the masked regions until a completely closed epitaxial layer has formed.
  • the III-V nitride Since the III-V nitride Thus, the semiconductor layer essentially did not result from growing on the substrate but from lateral crystal growth, the closed III-V nitride semiconductor layer has a significantly smaller number of dislocations over the masked areas than over the non-masked areas of the substrate.
  • the ELOG process can be used to produce a few ⁇ m thick III-V nitride semiconductor layers with a relatively low dislocation density.
  • the ELOG process was originally developed for a sapphire substrate and therefore has disadvantages, particularly with other substrate materials. If the coefficient of thermal expansion of the grown III-V nitride semiconductor layer is greater than that of the substrate, as is the case for example with the combination Al x Ga ⁇ - x N on SiC, stress-induced cracks (cracks) occur during the cooling phase from the growth temperature to room temperature. in the
  • Epitaxial layer that can make the III-V nitride semiconductor unusable.
  • a substrate made of a material not based on III-V nitride semiconductors is first provided, onto which a mask layer is applied in order to form masked regions and unmasked regions on the substrate.
  • the mask layer consists of a material that essentially does not allow crystal growth of the layer to be grown based on III-V nitride semiconductor material.
  • the III-V nitride semiconductor layer is then grown starting from the non-masked regions of the substrate.
  • the mask layer is formed on the substrate in such a way that some of the masked regions are formed so wide that the III-V nitride semiconductor layer grows together over them masked areas is prevented, while the III-V nitride semiconductor layer only grows together over the remaining narrow masked areas.
  • This measure forms separate regions of III-V nitride semiconductor layers, as a result of which these III-V nitride semiconductor layers have a degree of freedom in the cooling phase to room temperature, by means of which they can contract in the lateral direction without being induced by voltage Cracks occur even if the III-V nitride semiconductor layer has a different coefficient of thermal expansion than the substrate.
  • the mask layer consists of stripe-shaped masked areas which are separated from one another by stripe-shaped non-asked areas.
  • the ratio of the number of narrow masked areas to the number of wide masked areas is preferably approximately between 1: 1 and 1: 4, ie every second to fifth, particularly preferably every third of the masked strips is formed as a wide strip.
  • the ratio of the width of the wide masked areas to the width of the narrow masked areas is advantageously greater than about 2, particularly preferably greater than about.
  • the substrate can consist of sapphire, spinel or silicon carbide
  • the mask layer consists, for example, of silicon oxide, silicon nitride, titanium oxide, zirconium oxide or a combination thereof.
  • the III-V nitride semiconductor layer is preferably grown on the substrate by means of metal organic chemical gas phase epitaxy (MOVPE).
  • MOVPE metal organic chemical gas phase epitaxy
  • a buffer layer made of, for example, ZnO or a nitride semiconductor material can be applied to the substrate before the mask layer is applied.
  • the present invention is explained in more detail below on the basis of a preferred exemplary embodiment with reference to the drawing.
  • the single figure shows a cross-sectional view of a semiconductor structure which has been produced in accordance with the method of the present invention.
  • the method according to the invention is based on the ELOG method described at the outset for producing low-defect III-V nitride semiconductor layers, which has been modified for improvement. A detailed description of the method according to the invention is therefore omitted, since the known basic features of the ELOG method and general semiconductor technology can be used, as are explained in detail, for example, in EP-A1-0 942 459 already mentioned.
  • the basis for the epitaxially growing semiconductor layer 3 is a substrate 1 made of a material not based on III-V nitride semiconductor, which has a lower thermal expansion coefficient than the III-V nitride semiconductor material to be grown.
  • silicon carbide (SiC) is used as the substrate, but it is also possible, for example, to use ZnS substrates, GaAs substrates, spinel (MgAl 2 0 4 ) substrates or Si substrates.
  • An additional buffer layer (not shown) can optionally be applied to this substrate 1, which reduces the difference in the lattice constants between the III-V nitride semiconductor layer to be grown and the substrate.
  • a ZnO layer, an MgO layer or a III-V nitride semiconductor layer (AlN, GaN, AlGaN, InGaN), which has not been produced by the method described here, is suitable as such a buffer layer. In principle, however, the method according to the present invention can also be carried out without such a buffer layer with the desired result.
  • a mask layer 2 is then first applied to the substrate 1 or to the buffer layer on the substrate 1.
  • this mask layer consists of masked areas 2a and 2b and of unmasked areas 2c between the masked areas 2a, 2b.
  • Both the masked and the non-masked regions 2a, 2b and 2c of the mask layer 2 are preferably designed in the form of strips. Alternatively, however, lattice structures and the like are also possible.
  • some of the masked strips are formed as narrow strips 2a and others as wide strips 2b.
  • the ratio of the width Wb of the wide strips 2b to the width Ws of the narrow strips 2a is preferably greater than 2, particularly preferably greater than 4.
  • Every third of the masked strips is designed as a wide strip 2b; depending on the application, every second to fifth strip is preferably formed as a wide strip 2b.
  • the width Ws of the narrow masked areas 2a is approximately 0.5 to 100 ⁇ m, particularly preferably approximately 5 to 20 ⁇ m; and the layer thickness D M of the mask layer 2 is approximately 0.01 to 5 ⁇ m, preferably 0.1 to 3 ⁇ m.
  • the material of the mask layer 2 is selected such that growth of a III-V nitride semiconductor layer thereon is prevented or at least greatly restricted, so that the epitaxial growth of the III-V nitride semiconductor layer 3 only from the non-masked regions 2c of the substrate 1 goes out.
  • Suitable materials for the mask layer 2 are, in particular, oxides and nitrides, such as, for example, silicon oxide (SiO x ), silicon nitride (Si x N y ), titanium oxide (TiO x ) and zirconium oxide (ZrO x ), or a multilayer structure composed of these components.
  • the mask layer 2 must also be able to withstand the temperatures of over 600 ° C. required for the growth of the semiconductor layer 3.
  • mask layers of Si0 2 , SiN x and SiO ⁇ _ x N x are particularly preferred.
  • the mask layer 2 is applied by means of conventional techniques such as, for example, vapor deposition, sputtering or CVD processes and subsequent free etching of the desired unmasked areas 2c.
  • a GaN semiconductor layer is then epitaxially grown on the substrate 1 provided with the mask layer 2.
  • the GaN semiconductor layer can be grown by any method for growing GaN semiconductor layers. Suitable techniques are, for example, organometallic chemical gas phase epitaxy (MOVPE), molecular beam epitaxy (MBE), halide chemical gas phase epitaxy (HVPE) or a combination of these known processes. While the MOVPE method is preferable for thinner semiconductor layers, the HVPE is more suitable for thicker semiconductor layers. Since these methods are already well known, a more detailed description of them is not given here.
  • MOVPE organometallic chemical gas phase epitaxy
  • MBE molecular beam epitaxy
  • HVPE halide chemical gas phase epitaxy
  • the epitaxial growth of the GaN semiconductor layer 3 proceeds exclusively or at least predominantly from the non-masked areas 2c Substrate 1, as shown in the figure. Only from the point in time at which the layer thickness of the grown semiconductor layer
  • the growth of the GaN semiconductor layer 3 also begins over the masked regions 2a and 2b of the mask layer, but here primarily in the lateral direction.
  • the closed GaN semiconductor layer 3 has a significantly smaller layer above the masked regions 2a and 2b
  • the dimensions layer 2 also contains wide masked regions 2b, the GaN semiconductor layer does not grow together completely. More specifically, the GaN semiconductor layer only grows together over the narrow masked regions 2a, while a gap 4 remains above the wide masked regions 2b, by which adjacent sections of the GaN semiconductor layer 3 are separated from one another.
  • the ratio of the widths of the narrow masked areas 2a and the wide masked areas 2b and the ratio of the number of narrow masked areas 2a and the wide masked areas 2b can be varied depending on the desired layer thickness D HL and the desired lateral extent W HL of the GaN semiconductor layer 3 can be set.
  • the method according to the present invention in the case of masked and unmasked regions of the mask layer 2 which are designed in the form of strips, strips of any length, for example approximately 20 to 50 ⁇ m wide, can be one Semiconductor layer 3 can be produced with a low dislocation density.
  • the method according to the present invention can also be combined with the conventional ELOG processing techniques.
  • EP-A2-0 874 405 it is proposed, for example, to first apply a first mask layer to a substrate and then to grow a first GaN semiconductor layer.
  • This first GaN semiconductor layer then serves as a base on which a second mask layer, which is arranged offset from the first mask layer, and then the actual GaN semiconductor layer is applied. This further reduces the number of dislocations that are still present in the first grown semiconductor layer.

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  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'invention concerne un procédé de production de couches à semi-conducteurs pauvres en impuretés, à base de semi-conducteurs au nitrure III-V, selon lequel on prépare tout d'abord un substrat (1) constitué par un matériau non à base de semi-conducteurs au nitrure III-V sur lequel on applique une couche de masquage (2), en vue de former sur le substrat, des zones masquées (2a, 2b) et des zones non masquées (2c). On fait ensuite croître la couche à semi-conducteurs au nitrure III-V à partir des zones non masquées (2c) du substrat (1). L'invention vise à éviter la formation de fissures entraînant des tensions durant la phase de refroidissement de la température de croissance à la température ambiante et, à cet effet, est caractérisée en ce que la couche de masquage (2) est formée sur le substrat (1), de telle façon que quelques-unes des zones masquées (2b) sont formées sur une largeur suffisante pour qu'une croissance de la couche à semi-conducteurs au nitrure III-V (3) soit empêchée sur ces zones masquées larges (2b), cependant qu'une croissance de la couche à semi-conducteurs au nitrure III-V ne se produise que sur les zones masquées étroites restantes (2a).
EP02760146A 2001-08-31 2002-09-02 Procede de production de couches a semi-conducteurs a base de semi-conducteurs au nitrure iii-v Withdrawn EP1425784A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10142656A DE10142656A1 (de) 2001-08-31 2001-08-31 Verfahren zur Herstellung von Halbleiterschichten auf III-V-Nitridhalbleiter-Basis
DE10142656 2001-08-31
PCT/DE2002/003221 WO2003025988A1 (fr) 2001-08-31 2002-09-02 Procede de production de couches a semi-conducteurs a base de semi-conducteurs au nitrure iii-v

Publications (1)

Publication Number Publication Date
EP1425784A1 true EP1425784A1 (fr) 2004-06-09

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EP02760146A Withdrawn EP1425784A1 (fr) 2001-08-31 2002-09-02 Procede de production de couches a semi-conducteurs a base de semi-conducteurs au nitrure iii-v

Country Status (5)

Country Link
US (1) US6927155B2 (fr)
EP (1) EP1425784A1 (fr)
JP (1) JP2005503037A (fr)
DE (1) DE10142656A1 (fr)
WO (1) WO2003025988A1 (fr)

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DE10250915B4 (de) * 2002-10-31 2009-01-22 Osram Opto Semiconductors Gmbh Verfahren zur Abscheidung eines Materials auf einem Substratwafer
US8168000B2 (en) * 2005-06-15 2012-05-01 International Rectifier Corporation III-nitride semiconductor device fabrication
JP5245305B2 (ja) * 2007-07-06 2013-07-24 サンケン電気株式会社 電界効果半導体装置及びその製造方法
JP5903714B2 (ja) * 2007-07-26 2016-04-13 ソイテックＳｏｉｔｅｃ エピタキシャル方法およびこの方法によって成長させられたテンプレート
US20120094434A1 (en) * 2008-08-04 2012-04-19 Benjamin Allen Haskell Enhanced spontaneous separation method for production of free-standing nitride thin films, substrates, and heterostructures
US20100025727A1 (en) * 2008-08-04 2010-02-04 Benjamin Allen Haskell Enhanced spontaneous separation method for production of free-standing nitride thin films, substrates, and heterostructures
DE102016103358A1 (de) 2016-02-25 2017-08-31 Osram Opto Semiconductors Gmbh Laserbarren mit gräben
DE102019103756A1 (de) * 2019-02-14 2020-08-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines halbleiterbauelements unter verwendung einer strukturierten dielektrischen maske und halbleiterbauelement
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WO2003025988A1 (fr) 2003-03-27
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US20040266157A1 (en) 2004-12-30
US6927155B2 (en) 2005-08-09

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