Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
  • B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
  • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
  • H01L21/3063—Electrolytic etching
• • C—CHEMISTRY; METALLURGY
  • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
  • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
  • C25F3/00—Electrolytic etching or polishing
  • C25F3/16—Polishing
  • C25F3/30—Polishing of semiconducting materials
• • C—CHEMISTRY; METALLURGY
  • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
  • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
  • C25F5/00—Electrolytic stripping of metallic layers or coatings
• • C—CHEMISTRY; METALLURGY
  • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
  • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
  • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
  • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
  • H01L21/321—After treatment
  • H01L21/32115—Planarisation
  • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
  • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

Definitions

• This invention relates to methods and apparatuses for removing conductive and/or semiconductor material from microelectronic substrates.
• Microelectronic substrates and substrate assemblies typically include a semiconductor material having features, such as transistors and transistor gates, that are linked with conductive lines.
• One conventional method for forming transistor gates is shallow trench isolation (STI).
• STI shallow trench isolation
• a typical STI process includes doping a semiconductor substrate 10 to form an at least partially conductive material 11.
• An oxide layer 14 is disposed on the conductive material 11, and a nitride layer 15 is disposed on the oxide layer 14.
• a mask 16 having mask openings 17 is then positioned over the oxide layer 15, and the semiconductor substrate 10 is etched to form apertures 60, shown in Figure IB.
• the apertures 60 are coated with a gate oxide layer 61, and a gate material 62 is disposed adjacent to the gate oxide 61. Accordingly, the gate oxide 61 can electrically isolate adjacent gates. The nitride layer 14 and the oxide layer 15 can then be removed.
• One drawback with the STI structure described above with reference to Figures 1 A-C is that the conductive material 11 has sharp corners 63 (shown in Figures IB and 1C) at the edges of the apertures 60. The sharp corners 63 can emit electromagnetic radiation (generally in the manner of an antenna) which can interfere with the operation of adjacent semiconductor features.
• One conventional approach to addressing this drawback is to oxidize material at the sharp corners 63 by exposing the semiconductor substrate 10 to a high temperature environment (e.g., about 1050°C). The oxidized material is then removed (for example, with an etchant) to blunt the corners.
• a high temperature environment e.g., about 1050°C.
• the oxidized material is then removed (for example, with an etchant) to blunt the corners.
• One drawback with this approach is that the curvature that can be achieved with a high temperature process may be limited.
• Another drawback is that the high temperature can damage portions or components of the semiconductor substrate.
• Still another drawback is that the high-temperature process can be expensive, which can increase the cost of the products formed from the semiconductor substrate.
• One conventional technique for removing bulk conductive material from semiconductor substrates includes applying an alternating current to a conductive layer via an intermediate electrolyte to remove portions of the layer.
• a conventional apparatus 60 includes a first electrode 20a and a second electrode 20b coupled to a current source 21.
• the first electrode 20a is attached directly to a metallic layer 11a of a semiconductor substrate 10 and the second electrode 20b is at least partially immersed in a liquid electrolyte 31 disposed on the surface of the metallic layer 1 la by moving the second electrode downwardly until it contacts the electrolyte 31.
• a barrier 22 protects the first electrode 20a from direct contact with the electrolyte 31.
• the current source 21 applies alternating current to the substrate 10 via the electrodes 20a and 20b and the electrolyte 31 to remove conductive material from the conductive layer 11a.
• the alternating current signal can have a variety of wave forms, such as those disclosed by Frankenthal et al. in a publication entitled “Elecfroetching of Platinum in the Titanium-Platinum-Gold Metallization on Silicon Integrated Circuits” (Bell Laboratories), incorporated herein in its entirety by reference.
• One drawback with the arrangement shown in Figure 2A is that it may not be possible to remove material from the conductive layer 11a in the region where the first electrode 20a is attached because the barrier 22 prevents the electrolyte 31 from contacting the substrate 10 in this region. Alternatively, if the first electrode 20a contacts the electrolyte in this region, the electrolytic process can degrade the first electrode 20a. Still a further drawback is that the electrolytic process may not uniformly remove material from the substrate 10. For example, "islands" of residual conductive material having no direct electrical connection to the first electrode 20a may develop in the conductive layer 11a.
• the residual conductive material can interfere with the formation and/or operation of the conductive lines, and it may be difficult or impossible to remove with the electrolytic process unless the first electrode 20a is repositioned to be coupled to such "islands."
• One approach to addressing some of the foregoing drawbacks is to attach a plurality of first electrodes 20a around the periphery of the substrate 10 to increase the uniformity with which the conductive material is removed. However, islands of conductive material may still remain despite the additional first electrodes 20a.
• Another approach is to form the electrodes 20a and 20b from an inert material, such as carbon, and remove the barrier 22 to increase the area of the conductive layer 11a in contact with the electrolyte 31.
• FIG. 2B shows still another approach to addressing some of the foregoing drawbacks in which two substrates 10 are partially immersed in a vessel 30 containing the electrolyte 31.
• the first electrode 20a is attached to one substrate 10 and the second electrode 20b is attached to the other substrate 10.
• An advantage of this approach is that the electrodes 20a and 20b do not contact the electrolyte.
• islands of conductive material may still remain after the electrolytic process is complete, and it may be difficult to remove conductive material from the points at which the electrodes 20a and 20b are attached to the substrates 10.
• the present invention is directed toward microelectronic substrates that include conductive materials having recesses with rounded corners, and methods for forming such microelectronic substrates.
• a method in accordance with one aspect of the invention includes disposing an electrolytic fluid adjacent to a conductive material of the microelectronic substrate.
• the conductive material has a first surface in a first plane and a recess in the first surface, with the recess being bounded by a second surface in a second plane.
• the conductive material further has a corner between the first and second surfaces.
• the method can further include removing at least part of the conductive material from the corner by positioning first and second electrodes in fluid communication with the electrolytic fluid, and coupling at least one of the electrodes to a source of electrical potential.
• a method for forming a microelectronic substrate can include disposing a generally non-conductive material adjacent to a conductive material of the microelectronic substrate. The method can further include forming a recess extending through the generally non-conductive material and into the conductive material, with the recess defining a comer at least proximate to an interface between the conductive material and the generally non-conductive material. The method can still further include removing at least part of the conductive material from the corner by exposing the comer to an electrical potential to at least partially blunt the corner.
• the invention is also directed toward a microelectronic substrate formed by a process that can include disposing a generally non-conductive material adjacent to a conductive material of the microelectronic substrate and forming a recess extending through the generally non-conductive material and into the conductive material.
• the recess defines a comer at least proximate to an interface between the conductive material and the generally non-conductive material.
• the process can further include removing at least part of the conductive material from the comer to at least partially blunt the comer.
• the microelectronic substrate can be formed by a process that includes disposing an electrolytic fluid adjacent to a conductive material of a microelectronic substrate, with the conductive material having a first surface in a first plan and a recess in the first surface.
• the recess can be bounded by a second surface in a second plane, with the conductive material having a comer between the first and second surfaces.
• the process can further include removing at least part of the conductive material from the comer by positioning first and second electrodes in fluid communication with the electrolytic fluid, and coupling at least one of the electrodes to a source of electrical potential.
• Figures 1A-C are schematic illustrations of a shallow trench isolation process for forming semiconductor features in a semiconductor substrate in accordance with the prior art.
• Figures 2A-B are partially schematic, side elevational views of apparatuses for removing conductive material from a semiconductor substrate in accordance with the prior art.
• Figure 3 is a partially schematic, side elevational view of an apparatus having a support member and a pair of electrodes for removing conductive material from a microelectronic substrate in accordance with an embodiment of the invention.
• Figure 4 is a partially schematic, side elevational view of an apparatus for removing conductive material and sensing characteristics of the microelectronic substrate from which the material is removed in accordance with another embodiment of the invention.
• Figure 5 is a partially schematic, side elevational view of an apparatus that includes two electrolytes in accordance with still another embodiment of the invention.
• Figure 6 is a partially schematic, plan view of a substrate adjacent to a plurality of electrodes in accordance with still further embodiments of the invention.
• Figure 7 is a cross-sectional side elevational view of an electrode and a substrate in accordance with yet another embodiment of the invention.
• Figure 8A is a partially schematic, isometric view of a portion of a support for housing electrode pairs in accordance with still another embodiment of the invention.
• Figures 8B-8C are isometric views of electrodes in accordance with still further embodiments of the invention.
• Figures 9A and 9B schematically illustrate a circuit and waveform for electrolytically processing a microelectronic substrate in accordance with yet another embodiment of the invention.
• Figure 10A-F schematically illustrate a process for rounding or blunting the corners of apertures in a conductive material of a microelectronic substrate in accordance with an embodiment of the invention.
• Figure 11 is a partially schematic illustration of a process for rounding or blunting the comers of apertures in a conductive material of a microelectronic substrate in accordance with another embodiment of the invention.
• the present disclosure describes methods and apparatuses for removing conductive materials from a microelectronic substrate and/or substrate assembly used in the fabrication of microelectronic devices. Many specific details of certain embodiments of the invention are set forth in the following description and in Figures 3-11 to provide a thorough understanding of these embodiments. One skilled in the art, however, will understand that the present invention may have additional embodiments, or that the invention may be practiced without several of the details described below. Figures 3-9B and the associated discussion refer generally to devices for removing conductive material from microelectronic substrates in accordance with embodiments of the invention.
• Figures lOA-11 and the associated discussion refer generally to techniques for rounding or blunting comers of conductive materials using, for example, apparatuses of the type described with reference to Figures 3-9B.
• conductive materials includes, but is not limited to, metals, such as copper, platinum and aluminum, and semiconductor materials, such as doped silicon and/or polysilicon.
• microelectronic substrate refers generally to substrates and substrate assemblies configured to support microelectronic features, such as semiconductor devices.
• FIG. 3 is a partially schematic, side elevational view of an apparatus 160 for removing conductive material from a microelectronic substrate or substrate assembly 110 in accordance with an embodiment of the invention.
• the apparatus 160 includes a vessel 130 containing an electrolyte 131, which can be in a liquid or a gel state.
• electrolyte and electrolytic fluid refer generally to electrolytic liquids and gels. Structures in fluid communication with electrolytic fluids are accordingly in fluid communication with electrolytic liquids or gels.
• the microelectronic substrate 110 has an edge surface 112 and two face surfaces 113.
• a support member 140 supports the microelectronic substrate 110 relative to the vessel 130 so that a conductive layer 111 on at least one of the face surfaces 113 of the substrate 110 contacts the electrolyte 131.
• the conductive layer 111 can include metals such as platinum, tungsten, tantalum, gold, copper, or other conductive materials.
• the support member 140 is coupled to a substrate drive unit 141 that moves the support member 140 and the substrate 110 relative to the vessel 130.
• the substrate drive unit 141 can translate the support member 140 (as indicated by arrow "A") and/or rotate the support member 140 (as indicated by arrow "B").
• the apparatus 160 can further include a first electrode 120a and a second electrode 120b (referred to collectively as electrodes 120) supported relative to the microelectronic substrate 110 by a support member 124.
• the support arm 124 is coupled to an electrode drive unit 123 for moving the electrodes 120 relative to the microelectronic substrate 110.
• the electrode drive unit 123 can move the electrodes toward and away from the conductive layer 111 of the microelectronic substrate 110, (as indicated by arrow "C"), and/or transversely (as indicated by arrow "D") in a plane generally parallel to the conductive layer 111.
• the electrode drive unit 123 can move the electrodes in other fashions, or the electrode drive unit 123 can be eliminated when the substrate drive unit 141 provides sufficient relative motion between the substrate 110 and the electrodes 120.
• the electrodes 120 are coupled to a current source 121 with leads 128 for supplying electrical current to the electrolyte 131 and the conductive layer 111.
• the current source 121 supplies an alternating current (single phase or multiphase) to the electrodes 120.
• the current passes through the electrolyte 131 and reacts electiochemically with the conductive layer 111 to remove material (for example, atoms or groups of atoms) from the conductive layer 111.
• the electrodes 120 and/or the substrate 110 can be moved relative to each other to remove material from selected portions of the conductive layer 111, or from the entire conductive layer 111.
• a distance Di between the electrodes 120 and the conductive layer 111 is set to be smaller than a distance D 2 between the first electrode 120a and the second electrode 120b.
• the electrolyte 131 generally has a higher resistance than the conductive layer 111. Accordingly, the alternating current follows the path of least resistance from the first electrode 120a, through the electrolyte 131 to the conductive layer 111 and back through the electrolyte 131 to the second electrode 120b, rather than from the first electrode 120a directly through the electrolyte 131 to the second electrode 120b.
• a low dielectric material (not shown) can be positioned between the first electrode 120a and the second electrode 120b to decouple direct electrical communication between the electrodes 120 that does not first pass through the conductive layer 111.
• One feature of an embodiment of the apparatus 160 shown in Figure 3 is that the electrodes 120 do not contact the conductive layer 111 of the substrate 110.
• An advantage of this arrangement is that it can eliminate the residual conductive material resulting from a direct electrical connection between the electrodes 120 and the conductive layer 111, described above with reference to Figures 1 and 2.
• the apparatus 160 can eliminate residual conductive material adjacent to the contact region between the electrodes and the conductive layer because the electrodes 120 do not contact the conductive layer 111.
• the substrate 110 and/or the electiodes 120 can move relative to the other to position the electrodes 120 at any point adjacent to the conductive layer 111.
• An advantage of this arrangement is that the electrodes 120 can be sequentially positioned adjacent to every portion of the conductive layer to remove material from the entire conductive layer 111. Alternatively, when it is desired to remove only selected portions of the conductive layer 111, the electrodes 120 can be moved to those selected portions, leaving the remaining portions of the conductive layer 111 intact.
• Figure 4 is a partially schematic, side elevational view of an apparatus 260 that includes a support member 240 positioned to support the substrate 110 in accordance with another embodiment of the invention.
• the support member 240 supports the substrate 110 with the conductive layer 111 facing upwardly.
• a substrate drive unit 241 can move the support member 240 and the substrate 110, as described above with reference to Figure 3.
• First and second electrodes 220a and 220b are positioned above the conductive layer 111 and are coupled to a current source 221.
• a support member 224 supports the electrodes 220 relative to the substrate 110 and is coupled to an electrode drive unit 223 to move the electrodes 220 over the surface of the support conductive layer 111 in a manner generally similar to that described above with reference to Figure 3.
• the apparatus 260 further includes an electrolyte vessel 230 having a supply conduit 237 with an aperture 238 positioned proximate to the electrodes 220.
• an electrolyte 231 can be disposed locally in an interface region 239 between the electrodes 220 and the conductive layer 111, without necessarily covering the entire conductive layer 111.
• the electrolyte 231 and the conductive material removed from the conductive layer 111 flow over the substrate 110 and collect in an electrolyte receptacle 232.
• the mixture of electrolyte 231 and conductive material can flow to a reclaimer 233 that removes most of the conductive material from the electrolyte 231.
• a filter 234 positioned downstream of the reclaimer 233 provides additional filtration of the electrolyte 231 and a pump 235 returns the reconditioned electrolyte 231 to the electrolyte vessel 230 via a return line 236.
• the apparatus 260 can include a sensor assembly 250 having a sensor 251 positioned proximate to the conductive layer 111, and a sensor control unit 252 coupled to the sensor 251 for processing signals generated by the sensor 251.
• the control unit 252 can also move the sensor 251 relative to the substrate 110.
• the sensor assembly 250 can be coupled via a feedback path 253 to the electrode drive unit 223 and/or the substrate drive unit 241. Accordingly, the sensor 251 can determine which areas of the conductive layer 111 require additional material removal and can move the electrodes 220 and/or the substrate 110 relative to each other to position the electrodes 220 over those areas.
• the electrodes 220 and/or the substrate 110 can move relative to each other according to a pre-deteimined motion schedule.
• the sensor 251 and the sensor control unit 252 can have any of a number of suitable configurations.
• the sensor 251 can be an optical sensor that detects removal of the conductive layer 111 by detecting a change in the intensity, wavelength or phase shift of the light reflected from the substrate 110 when the conductive material is removed.
• the sensor 251 can emit and detect reflections of radiation having other wavelengths, for example, x-ray radiation.
• the sensor 251 can measure a change in resistance or capacitance of the conductive layer 111 between two selected points.
• one or both of the electrodes 220 can perform the function of the sensor 251 (as well as the material removal function described above), elirninating the need for a separate sensor 251.
• the sensor 251 can detect a change in the voltage and/or current drawn from the current supply 221 as the conductive layer 111 is removed.
• the senor 251 can be positioned apart from the electiolyte 231 because the electrolyte 231 is concentrated in the interface region 239 between the electrodes 220 and the conductive layer 111. Accordingly, the accuracy with which the sensor 251 determines the progress of the electrolytic process can be improved because the electrolyte 231 will be less likely to interfere with the operation of the sensor 251. For example, when the sensor 251 is an optical sensor, the electiolyte 231 will be less likely to distort the radiation reflected from the surface of the substrate 110 because the sensor 251 is positioned away from the interface region 239.
• FIG. 5 is a partially schematic, side elevational view of an apparatus 360 that directs alternating current to the substrate 110 through a first electrolyte 331a and a second electrolyte 331b.
• the first electrolyte 33 la is disposed in two first electrolyte vessels 330a
• the second electrolyte 331b is disposed in a second electrolyte vessel 330b.
• the first electrolyte vessels 330a are partially submerged in the second electrolyte 331b.
• the apparatus 360 can further include electrodes 320, shown as a first electrode 320a and a second electrode 320b, each coupled to a current supply 321 and each housed in one of the first electrolyte vessels 330a.
• one of the electrodes 320 can be coupled to ground.
• the electrodes 320 can include materials such as silver, platinum, copper and/or other materials, and the first electrolyte 331a can include sodium chloride, potassium chloride, copper sulfate and/or other electrolytes that are compatible with the material fonriing the electrodes 320.
• the first electrolyte vessels 330a include a flow restrictor 322, such as a permeable isolation membrane formed from TeflonTM, sintered materials such as sintered glass, quartz or sapphire, or other suitable porous materials that allow ions to pass back and forth between the first electrolyte vessels 330a and the second electrolyte vessel 330b, but do not allow the second electrolyte 330b to pass inwardly toward the electrodes 320 (for example, in a manner generally similar to a salt bridge).
• a flow restrictor 322 such as a permeable isolation membrane formed from TeflonTM, sintered materials such as sintered glass, quartz or sapphire, or other suitable porous materials that allow ions to pass back and forth between the first electrolyte vessels 330a and the second electrolyte vessel 330b, but do not allow the second electrolyte 330b to pass inwardly toward the electrodes 320 (for example, in a manner generally similar to a salt bridge).
• the first electrolyte 331a can be supplied to the electrode vessels 330a from a first electrolyte source 339 at a pressure and rate sufficient to direct the first electrolyte 331a outwardly through the flow restrictor 322 without allowing the first electrolyte 331a or the second electrolyte 330b to return through the flow restrictor 322.
• the second electrolyte 331b remains electrically coupled to the electrodes 320 by the flow of the first electrolyte 33 la through the restrictor 322.
• the apparatus 360 can also include a support member 340 that supports the substrate 110 with the conductive layer 111 facing toward the electrodes 320.
• the support member 340 can be positioned in the second electrolyte vessel 330b.
• the support member 340 and/or the electrodes 320 can be movable relative to each other by one or more drive units (not shown).
• One feature of an embodiment of the apparatus 360 described above with reference to Figure 5 is that the first electrolyte 331a can be selected to be compatible with the electrodes 320. An advantage of this feature is that the first electrolyte 331a can be less likely than conventional electrolytes to degrade the electrodes 320.
• the second electrolyte 331b can be selected without regard to the effect it has on the electrodes 320 because it is chemically isolated from the electiodes 320 by the flow restrictor 322. Accordingly, the second electrolyte 331b can include hydrochloric acid or another agent that reacts aggressively with the conductive layer 111 of the substrate 110.
• Figure 6 is a top plan view of the microelectronic substrate 110 positioned beneath a plurality of electrodes having shapes and configurations in accordance with several embodiments of the invention. For purposes of illustration, several different types of electrodes are shown positioned proximate to the same microelectronic substrate 110; however, in practice, electrodes of the same type can be positioned relative to a single microelectronic substrate 110.
• electrodes 720a and 720b can be grouped to form an electrode pair 770a, with each electrode 720a and 720b coupled to an opposite terminal of a current supply 121 ( Figure 3).
• the electrodes 770a and 770b can have an elongated or strip-type shape and can be arranged to extend parallel to each other over the diameter of the substiate 110.
• the spacing between adjacent electrodes of an electrode pair 370a can be selected to direct the electrical current into the substiate 110, as described above with reference to Figure 3.
• electiodes 720c and 720d can be grouped to form an electrode pair 770b, and each electrode 720c and 720d can have a wedge or "pie" shape that tapers inwardly toward the center of the microelectronic substrate 110.
• narrow, strip-type electrodes 720e and 720f can be grouped to form electrode pairs 770c, with each electrode 720e and 720f extending radially outwardly from the center 113 of the microelectronic substrate 110 toward the periphery 112 of the microelectronic substrate 110.
• a single electrode 720g can extend over approximately half the area of the microelectronic substrate 110 and can have a semicircular planform shape.
• the electrode 720g can be grouped with another electrode (not shown) having a shape corresponding to a mirror image of the electrode 720g, and both electiodes can be coupled to the current source 121 to provide alternating current to the microelectronic substrate in any of the manners described above with reference to Figures 3-5.
• Figure 7 is a partially schematic, cross-sectional side elevational view of a portion of the substiate 110 positioned beneath the electiode 720c described above with reference to Figure 6.
• the electrode 720c has an upper surface 771 and a lower surface 772 opposite the upper surface 771 and facing the conductive layer 111 of the substrate 110.
• the lower surface 772 can taper downwardly from the center 113 of the substrate 110 toward the perimeter 112 of the substrate 110 in one aspect of this embodiment to give the electiode 720c a wedge-shaped profile.
• the electrode 720c can have a plate-type configuration with the lower surface 772 positioned as shown in Figure 7 and the upper surface 771 parallel to the lower surface 772.
• the electrical coupling between the electiode 720c and the substrate 110 can be stronger toward the periphery 112 of the substrate 110 than toward the center 113 of the substrate 110.
• This feature can be advantageous when the periphery 112 of the substrate 110 moves relative to the electrode 720c at a faster rate than does the center 113 of the substrate 110, for example, when the substrate 110 rotates about its center 113.
• the electrode 720c can be shaped to account for relative motion between the electrode and the substiate 110.
• the electiode 720c can have other shapes.
• the lower surface 772 can have a curved rather than a flat profile.
• any of the electiodes described above with reference to Figure 6 (or other electrodes having shapes other than those shown in Figure 6) can have a sloped or curved lower surface.
• the electiodes can have other shapes that account for relative motion between the electrodes and the substiate 110.
• FIG 8A is a partially schematic view of an electrode support 473 for supporting a plurality of electiodes in accordance with another embodiment of the invention.
• the electrode support 473 can include a plurality of electiode apertures 474, each of which houses either a first electiode 420a or a second electrode 420b.
• the first electrodes 420a are coupled through the apertures 474 to a first lead 428a and the second electiodes 420b are coupled to a second lead 428b. Both of the leads 428a and 428b are coupled to a current supply 421.
• each pair 470 of first and second electrodes 420a and 420b defines part of a circuit that is completed by the substiate 110 and the electrolyte(s) described above with reference to Figures 3-5.
• the first lead 428a can be offset from the second lead 428b to reduce the likelihood for short circuits and/or capacitive coupling between the leads.
• the electrode support 473 can have a configuration generally similar to any of those described above with reference to Figures 1-7.
• any of the individual electrodes (e.g., 320a, 320c, 320e, or 320g) described above with reference to Figure 6 can be replaced with an electiode support 473 having the same overall shape and including a plurality of apertures 474, each of which houses one of the first electrodes 420a or the second electiodes 420b.
• the electrode pairs 470 shown in Figure 8A can be arranged in a manner that corresponds to the proximity between the electiodes 420a, 420b and the microelectronic substiate 110 ( Figure 7), and/or the electrode pairs 470 can be arranged to correspond to the rate of relative motion between the electiodes 420a, 420b and the microelectronic substiate 110.
• the electrode pairs 470 can be more heavily concentrated in the periphery 112 of the substiate 110 or other regions where the relative velocity between the electiode pairs 470 and the substrate 110 is relatively high (see Figure 7). Accordingly, the increased concentration of electiode pairs 470 can provide an increased electrolytic current to compensate for the high relative velocity.
• first electrode 420a and the second electiode 420b of each electrode pair 470 can be relatively close together in regions (such as the periphery 112 of the substiate 110) where the electiodes are close to the conductive layer 111 (see Figure 7) because the close proximity to the conductive layer 111 reduces the likelihood for direct electrical coupling between the first electrode 420a and the second electiode 420b.
• the amplitude, frequency and/or waveform shape supplied to different electiode pairs 470 can vary depending on factors such as the spacing between the electrode pair 470 and the microelectronic substrate 110, and the relative velocity between the electiode pair 470 and the microelectionic substiate 110.
• Figures 8B and 8C illustrate electrodes 820 (shown as first electiodes 820a and second electrodes 820b) arranged concentiically in accordance with still further embodiments of the invention.
• the first electiode 820a can be positioned concentiically around the second electrode 820b, and a dielectric material 829 can be disposed between the first electiode 820a and the second electiode 820b.
• the first electrode 820a can define a complete 360° arc around the second electrode 820b, as shown in Figure 8B, or alternatively, the first electrode 820a can define an arc of less than 360°.
• the first electrode 820A can be concentrically disposed between two second electiodes 820b, with the dielectric material 829 disposed between neighboring electiodes 820.
• current can be supplied to each of the second electrodes 820b with no phase shifting.
• the current supplied to one second electrode 820b can be phase-shifted relative to the current supplied to the other second electiode 820b.
• the current supplied to each second electiode 820b can differ in characteristics other than phase, for example, amplitude.
• Figures 8B and 8C is that the first electrode 820a can shield the second electrode(s) 820b from interference from other current sources.
• the first electrode 820a can be coupled to ground to shield the second electiodes 820b.
• An advantage of this arrangement is that the current applied to the substrate 110 ( Figure 7) via the electrodes 820 can be more accurately controlled.
• Figure 9A is a schematic circuit representation of some of the components described above with reference to Figures 3-8C.
• the current source 521 is coupled to the first electrode 520a and the second electiode 520b with leads 528a and 528b respectively.
• the electiodes 520a and 520b are coupled to the microelectronic substiate 110 with the electiolyte 531 in an arrangement that can be represented schematically by two sets of parallel capacitors and resistors.
• a third capacitor and resistor schematically indicate that the microelectronic substrate 110 "floats" relative to ground or another potential.
• the current source 521 can be coupled to an amplitude modulator 522 that modulates the signal produced by the current source 521, as is shown in Figure 9B. Accordingly, the current source 521 can generate a high-frequency wave 904, and the amplitude modulator 522 can superimpose a low-frequency wave 902 on the high-frequency wave 904.
• the high-frequency wave 904 can include a series of positive or negative voltage spikes contained within a square wave envelope defined by the low-frequency wave 902. Each spike of the high-frequency wave 904 can have a relatively steep rise time slope to transfer charge through the dielectric to the electrolyte, and a more gradual fall time slope.
• the fall time slope can define a straight line, as indicated by high- frequency wave 904, or a curved line, as indicated by high-frequency wave 904a.
• the high-frequency wave 904 and the low- frequency wave 902 can have other shapes depending, for example, on the particular characteristics of the dielectiic material and electiolyte adjacent to the electrodes 420, the characteristics of the substiate 110, and/or the target rate at which material is to be removed from the substrate 110.
• any of the embodiments described above with reference to Figures 3-8C can include an amplitude modulator in addition to a current source.
• Figures 10A-F schematically illustrate a process for forming features in a microelectionic substiate in accordance with another embodiment of the invention, using any of the devices described above with reference to Figures 3-8C.
• the process can include forming shallow trench isolation (STI) features, and in other embodiments, the process can include forming other types of features.
• the process can include rounding or blunting comers of a conductive material, as described in greater detail below.
• Figure 10A illustrates a portion of a microelectronic substiate 1010 having a face surface 1013 with a conductive, partially conductive, and/or semiconductive material 1011 (referred to collectively as a conductive material 1011).
• the conductive material 1011 can include silicon doped with boron or phosphorous.
• the conductive material 1011 can include other conductive or semiconductive materials.
• the process can further include forming apertures in the conductive material 1011, for example, to support a dielectric material or other microelectronic feature.
• the process can include disposing an oxide layer 1014 on the conductive material 1011, and then disposing a nitiide layer 1015 on the oxide layer 1014.
• a mask 1016 having openings 1017 corresponding to the desired location of the microelectionic features is positioned adjacent to the nitiide layer 1015, and the microelectronic substiate 1010 is exposed to an etchant.
• the etchant can remove material positioned beneath the openings 1017 to form apertures 1060 or other recesses that extend through the nitiide layer 1015, through the oxide layer 1014, and through an upper surface 1065 of the conductive material 1011.
• the apertures 1060 can include sidewalls 1064 generally transverse to the upper surface 1065, and comers 1063 at the junction between the sidewalls 1064 and the upper surface 1065.
• the nitiide layer 1015 and the oxide layer 1014 can be etched away from the comers 1063 before the corners 1063 are rounded or blunted.
• a liquid etchant having about 500 parts water to about one part hydrofluoric acid and about one part hydrochloric acid can etch back the nitride layer 1015 and the oxide layer 1014 at approximately the same rate to expose the upper surface 1065 of the conductive material 1011 near the comers 1063.
• the etclring process can be completed at a temperature of about 60°C.
• the step of etching the nitiide layer 1015 and the oxide layer 1014 back from the comers 1063 can be eliminated, as described in greater detail below with reference to Figure 11.
• the exposed comers 1063 can be rounded or blunted to form rounded comers 1063 a (shown in Figure 10D in broken lines).
• an electrolytic fluid 1031 can be disposed adjacent to the comers 1063 and placed in fluid communication with a first electiode 1020a and a second electiode 1020b (collectively referred to as electiodes 1020).
• the electrodes 1020 can be spaced apart from the microelectronic substiate 1010 by a distance of from about one millimeter to about two millimeters. In other embodiments, this spacing can have other values.
• At least one of the electrodes 1020 can be coupled to a source of electrical potential, such as an alternating current source, in a manner generally similar to that described above with reference to Figures 3-9B. Accordingly, electrical current will tend to flow from one of the electrodes 1020 through the electrolytic fluid 1031 to the comers 1063 to oxidize the conductive material at the comers 1063. The electrical current can travel through the conductive material 1011 and back through the electiolytic fluid 1031 to the other electiode 1020 to complete an electrical circuit. The oxidized material at the comer 1063 can be removed by chemical interaction with the electrolytic fluid to form the rounded comers 1063a.
• a source of electrical potential such as an alternating current source
• electrical current can be introduced into the electrolytic fluid 1031 at a rate of from about one to about 500mA cm 2 (and in a particular embodiment, about 50 mA/cm 2 ), a frequency of about 60 Hz, and a voltage of about 15 V rms .
• the electrical current can have other characteristics.
• the composition of the electiolytic fluid 1031 can be the same as the composition of the etchant used to etch back the oxide layer 1014 and the nitride layer 1015.
• the constituents of the electiolytic fluid 1031 can be selected to reduce or eliminate etching at the sidewalls 1064 of the apertures 1060.
• the electrolytic fluid 1031 can be (a) sufficiently conductive to conduct electrical current to the comers 1063 to oxidize conductive material at the comers 1063, (b) sufficiently reactive to remove oxidized material from the comers 1063, and (c) not so reactive as to remove un-oxidized material from the sidewalls 1064 of the aperture 1060.
• ethane glycol can be added to the electiolytic fluid 1031 to reduce the etching rate of the silicon sidewalls 1064.
• other chemicals can be disposed in the electiolytic fluid 1031 to control the rate of material removal at the sidewalls 1064, while still allowing material from the comers 1063 to be removed, as discussed above.
• Figure 10E illustrates a portion of the microelectionic substrate 1010 shown in Figure 10D after the comers 1063 ( Figure 10D) have been rounded to form the blunted comers 1063 a.
• the cross-sectional shape of the comers 1603 a can define an approximately circular arc.
• the blunted comers 1063a can have other shapes.
• the blunted comers 1063a are rounder or less sharp than the sharp comers 1063 shown in Figure 10D.
• Figure 10F shows a gate oxide material 1066 disposed in the apertures 1060 to coat the sidewalls 1064.
• the gates can then be formed by disposing a conventional gate material 1067 on the gate oxide 1066 within the apertures 1060.
• the initially sharp comers 1063 formed at the junction between the sidewalls 1064 and the upper surface 1065 of the conductive material 1011 can be blunted or rounded without elevating the temperature of microelectionic substiate 1110 significantly above room temperature. Accordingly, the blunted comers 1063a can be less likely to emit electromagnetic signals during operation of the microelectionic substiate 1010, which can create interference with other features of the microelectronic substiate 1010. Additionally, the microelectronic substiate can be less expensive to manufacture and more reliable as a result of spending less time in a high temperature environment.
• FIG. 11 is a partially schematic illustration of a process for rounding or blunting conductive comers of a microelectronic substiate 1110 in accordance with another embodiment of the invention.
• the microelectionic substiate 1110 can include conductive material 1111, an oxide layer 1114, and a nitiide layer 1115 arranged generally in the same manner as that described above with reference to Figure 10B.
• Apertures 1160 are etched through the nitiide layer 1115 and the oxide layer 1114 and into the conductive material 1111, also in a manner generally similar to that described above with reference to Figure 10B.
• the apertures 1160 can have sidewalls 1164 that form sharp comers 1163 where the apertures 1160 intersect an upper surface 1165 of the conductive material 1111.
• a first electiode 1120a and a second electiode 1120b can be positioned in fluid communication with an electrolyte 1131 disposed on the microelectronic substrate 1110 to round the initially sharp comers 1163 without first etching back the oxide layer 1114 and the nitiide layer 1115 from the comers 1163. Accordingly, the oxide layer 1114 and the nitiide layer 1115 can initially overhang the rounded comers 1163 a, at least until the oxide layer 1114 and the nitride layer 1115 are removed from the microelectronic substiate 1110.
• An advantage of this process is that it can eliminate the step described above with reference to Figure IOC.

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• 2002
  • 2002-06-20 CN CNB028122380A patent/CN100356523C/zh not_active Expired - Fee Related
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