EP1381561A1 - Verfahren zur herstellung eindimensionaler nanostrukturen und so erhaltene nanostrukturen - Google Patents

Verfahren zur herstellung eindimensionaler nanostrukturen und so erhaltene nanostrukturen

Info

Publication number
EP1381561A1
EP1381561A1 EP02727669A EP02727669A EP1381561A1 EP 1381561 A1 EP1381561 A1 EP 1381561A1 EP 02727669 A EP02727669 A EP 02727669A EP 02727669 A EP02727669 A EP 02727669A EP 1381561 A1 EP1381561 A1 EP 1381561A1
Authority
EP
European Patent Office
Prior art keywords
lines
nanostructures
atomic lines
atomic
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02727669A
Other languages
English (en)
French (fr)
Inventor
Marie D'angelo
Victor Aristov
Vincent Derycke
Fabrice Semond
Patrick Soukiassian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP1381561A1 publication Critical patent/EP1381561A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices

Definitions

  • the present invention relates to a method for manufacturing unidi al nanostructures as well as the nanostructures obtained by this method.
  • the invention allows, in particular, the manufacture of nanostructures having passivated or metallized bands.
  • the invention applies in particular to the field of nano-electronics.
  • the present invention solves the problem of manufacturing one-dimensional nanostructures having a predefined electrical state, namely an electrically insulating or conductive state.
  • the invention aims to manufacture one-dimensional insulating or conductive structures, of great length and width on the nanometric scale.
  • the subject of the present invention is a process for manufacturing one-dimensional nanostructures, this process being characterized in that:
  • a material capable of being adsorbed selectively between the atomic lines is deposited on this surface, without being adsorbed on these atomic lines, the deposition of this material thus generating, between the atomic lines, bands of this material.
  • the atomic lines are made of silicon.
  • the silicon carbide has a cubic structure and the surface is a surface of the substrate of cubic silicon carbide.
  • the material is chosen so as to generate passivated bands.
  • the material can be hydrogen or oxygen or any other molecule making it possible to passivate the underlying surface, for example NO, N 2 0, N 2 , NH 3 and sulfur.
  • the material is chosen so as to generate electrically conductive strips.
  • the material is for example a metal.
  • This metal is for example silver or any other metal, for example gold or copper or a metal chosen from the group of alkali metals or transition metals.
  • the material is formed from organic molecules or from inorganic molecules.
  • the present invention also relates to the nanostructures obtained by the process which is the subject of the invention.
  • this surface of symmetry 3x2 is transformed until it presents an organization on the atomic scale (reconstruction) of symmetry c (4x2).
  • This surface is then exposed to ultra pure molecular hydrogen at low pressure (about 10 "8 hPa), while maintaining the surface at room temperature (about 20 ° C).
  • Atomic lines 4 do not react with hydrogen while the underlying surface is passivated.
  • the hydrogen is therefore adsorbed only between the atomic lines and thus generates, between these atomic lines, passivated bands 6.
  • the latter are metallic strips of nanometric width which are produced on the surface.
  • the first step in the manufacture of these metallic "nanostrips” consists in preparing and calibrating a source of potassium.
  • the procedure to follow is given below.
  • a source of potassium atoms is placed in an ultra-vacuum chamber and very precisely degassed.
  • the source is considered to be sufficiently degassed when the increase in pressure in the chamber during the time necessary to evaporate a monolayer of potassium does not exceed 2 ⁇ 10 ⁇ 9 Pa.
  • the potassium source must then be calibrated. Any method for determining the rate of evaporation of potassium atoms can be used.
  • Cubic SiC entirely made up of silicon atoms presenting a type c reconstruction (4x2) and studying the evolution of the intensity of the XPS signal from the core level K3.
  • a diffraction plate corresponding perfectly to such a 2x3 surface corresponds to a coverage rate of 2/3 of monolayer.
  • the second step is the formation of atomic lines of silicon on the surface of SiC. On this subject, see document [1].
  • New anneals allow the density of these lines to be reduced in a controlled manner.
  • the third step is to deposit potassium atoms on this surface.
  • the procedure to follow is given below.
  • the SiC surface with the atomic lines of silicon is placed about 3 cm from the potassium source. Then potassium atoms are deposited on the surface of SiC. These potassium atoms are deposited preferentially between the atomic lines of silicon. The quantity of silicon to be deposited must correspond to the filling of the space between the lines.
  • This space between the lines corresponds to an order of type c (4x2).
  • the inventors demonstrated with the UPS / XPS technique as well as with the STM / STS technique that, when the surface is saturated with potassium, this order becomes 2x1 and takes on a metallic character. On the other hand, the silicon lines do not become metallic, even when the surface is saturated with potassium.
  • any adsorbate having the following two properties:
  • the adsorbate is selectively adsorbed between the silicon lines
  • the adsorbate causes the spreading of the space located between the lines (that is to say the metallization of the type c reconstruction (4x2) of cubic SiC).
  • the present invention is not limited to the use of hydrogen, oxygen or metals for the formation of nanobands between the atomic lines: materials made up of inorganic molecules, for example halogens, can be used
  • organic molecules for example polymers, including conductive polymers and organic semiconductor polymers (for example PCDTA or Thiols), benzene or pentacene molecules for example, and one-dimensional organic molecules, for example to make bridges or contacts.
  • polymers including conductive polymers and organic semiconductor polymers (for example PCDTA or Thiols), benzene or pentacene molecules for example, and one-dimensional organic molecules, for example to make bridges or contacts.
  • the same process is used, for example, as for oxygen; the surface is exposed to molecules under vacuum or vaporized (for example in the case of Br, S and I).

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electrodes Of Semiconductors (AREA)
EP02727669A 2001-04-19 2002-04-17 Verfahren zur herstellung eindimensionaler nanostrukturen und so erhaltene nanostrukturen Withdrawn EP1381561A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0105314A FR2823739B1 (fr) 2001-04-19 2001-04-19 Procede de fabrication de nanostructures unidimensionnelles et nanostructures obtenues par ce procede
FR0105314 2001-04-19
PCT/FR2002/001326 WO2002085778A1 (fr) 2001-04-19 2002-04-17 Procede de fabrication de nanostructures unidimensionnelles et nanostructures obtenues par ce procede

Publications (1)

Publication Number Publication Date
EP1381561A1 true EP1381561A1 (de) 2004-01-21

Family

ID=8862481

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02727669A Withdrawn EP1381561A1 (de) 2001-04-19 2002-04-17 Verfahren zur herstellung eindimensionaler nanostrukturen und so erhaltene nanostrukturen

Country Status (6)

Country Link
US (1) US20040132242A1 (de)
EP (1) EP1381561A1 (de)
JP (1) JP4387672B2 (de)
CA (1) CA2444865A1 (de)
FR (1) FR2823739B1 (de)
WO (1) WO2002085778A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2841892B1 (fr) * 2002-07-05 2005-05-06 Commissariat Energie Atomique Nano-objets metalliques, formes sur des surfaces de carbure de silicium, et procede de fabrication de ces nano-objets
FR2871936B1 (fr) * 2004-06-21 2006-10-06 Commissariat Energie Atomique Procede de metallisation de la surface prealablement passivee d'un materiau semi conducteur et materiau obtenu par ce procede
FR2887866B1 (fr) * 2005-06-30 2007-08-17 Commissariat Energie Atomique Nanostructures a resistance differentielle negative et procede de fabrication de ces nanostructures
WO2007003576A1 (fr) * 2005-06-30 2007-01-11 Commissariat A L'energie Atomique Nanostructures a resistance differentielle negative et leur procede de fabrication
FR2888399B1 (fr) * 2005-07-05 2008-03-14 Commissariat Energie Atomique Substrat, notamment en carbure de silicium, recouvert par une couche mince de nitrure de silicium stoechiometrique, pour la fabrication de composants electroniques, et procede d'obtention d'une telle couche

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5318915A (en) * 1993-01-25 1994-06-07 North Carolina State University At Raleigh Method for forming a p-n junction in silicon carbide
FR2757183B1 (fr) * 1996-12-16 1999-02-05 Commissariat Energie Atomique Fils atomiques de grande longueur et de grande stabilite, procede de fabrication de ces fils, application en nano-electronique
JP3183845B2 (ja) * 1997-03-21 2001-07-09 財団法人ファインセラミックスセンター カーボンナノチューブ及びカーボンナノチューブ膜の製造方法
FR2786794B1 (fr) * 1998-12-02 2001-03-02 Commissariat Energie Atomique Couche monoatomique et monocristalline de grande taille, en carbone de type diamant, et procede de fabrication de cette couche
FR2801723B1 (fr) * 1999-11-25 2003-09-05 Commissariat Energie Atomique Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche
FR2823770B1 (fr) * 2001-04-19 2004-05-21 Commissariat Energie Atomique Procede de traitement de la surface d'un materiau semiconducteur, utilisant notamment l'hydrogene, et surface obtenue par ce procede

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO02085778A1 *

Also Published As

Publication number Publication date
FR2823739B1 (fr) 2003-05-16
WO2002085778A1 (fr) 2002-10-31
FR2823739A1 (fr) 2002-10-25
CA2444865A1 (fr) 2002-10-31
JP2004524984A (ja) 2004-08-19
US20040132242A1 (en) 2004-07-08
JP4387672B2 (ja) 2009-12-16

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