WO2002085778A1 - Procede de fabrication de nanostructures unidimensionnelles et nanostructures obtenues par ce procede - Google Patents

Procede de fabrication de nanostructures unidimensionnelles et nanostructures obtenues par ce procede Download PDF

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Publication number
WO2002085778A1
WO2002085778A1 PCT/FR2002/001326 FR0201326W WO02085778A1 WO 2002085778 A1 WO2002085778 A1 WO 2002085778A1 FR 0201326 W FR0201326 W FR 0201326W WO 02085778 A1 WO02085778 A1 WO 02085778A1
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WO
WIPO (PCT)
Prior art keywords
lines
nanostructures
atomic lines
atomic
silicon
Prior art date
Application number
PCT/FR2002/001326
Other languages
English (en)
French (fr)
Inventor
Marie D'angelo
Victor Aristov
Vincent Derycke
Fabrice Semond
Patrick Soukiassian
Original Assignee
Commissariat A L'energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat A L'energie Atomique filed Critical Commissariat A L'energie Atomique
Priority to JP2002583317A priority Critical patent/JP4387672B2/ja
Priority to EP02727669A priority patent/EP1381561A1/de
Priority to US10/475,269 priority patent/US20040132242A1/en
Priority to CA002444865A priority patent/CA2444865A1/fr
Publication of WO2002085778A1 publication Critical patent/WO2002085778A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices

Definitions

  • the present invention relates to a method for manufacturing unidi al nanostructures as well as the nanostructures obtained by this method.
  • the invention allows, in particular, the manufacture of nanostructures having passivated or metallized bands.
  • the invention applies in particular to the field of nano-electronics.
  • the present invention solves the problem of manufacturing one-dimensional nanostructures having a predefined electrical state, namely an electrically insulating or conductive state.
  • the invention aims to manufacture one-dimensional insulating or conductive structures, of great length and width on the nanometric scale.
  • the subject of the present invention is a process for manufacturing one-dimensional nanostructures, this process being characterized in that:
  • a material capable of being adsorbed selectively between the atomic lines is deposited on this surface, without being adsorbed on these atomic lines, the deposition of this material thus generating, between the atomic lines, bands of this material.
  • the atomic lines are made of silicon.
  • the silicon carbide has a cubic structure and the surface is a surface of the substrate of cubic silicon carbide.
  • the material is chosen so as to generate passivated bands.
  • the material can be hydrogen or oxygen or any other molecule making it possible to passivate the underlying surface, for example NO, N 2 0, N 2 , NH 3 and sulfur.
  • the material is chosen so as to generate electrically conductive strips.
  • the material is for example a metal.
  • This metal is for example silver or any other metal, for example gold or copper or a metal chosen from the group of alkali metals or transition metals.
  • the material is formed from organic molecules or from inorganic molecules.
  • the present invention also relates to the nanostructures obtained by the process which is the subject of the invention.
  • this surface of symmetry 3x2 is transformed until it presents an organization on the atomic scale (reconstruction) of symmetry c (4x2).
  • This surface is then exposed to ultra pure molecular hydrogen at low pressure (about 10 "8 hPa), while maintaining the surface at room temperature (about 20 ° C).
  • Atomic lines 4 do not react with hydrogen while the underlying surface is passivated.
  • the hydrogen is therefore adsorbed only between the atomic lines and thus generates, between these atomic lines, passivated bands 6.
  • the latter are metallic strips of nanometric width which are produced on the surface.
  • the first step in the manufacture of these metallic "nanostrips” consists in preparing and calibrating a source of potassium.
  • the procedure to follow is given below.
  • a source of potassium atoms is placed in an ultra-vacuum chamber and very precisely degassed.
  • the source is considered to be sufficiently degassed when the increase in pressure in the chamber during the time necessary to evaporate a monolayer of potassium does not exceed 2 ⁇ 10 ⁇ 9 Pa.
  • the potassium source must then be calibrated. Any method for determining the rate of evaporation of potassium atoms can be used.
  • Cubic SiC entirely made up of silicon atoms presenting a type c reconstruction (4x2) and studying the evolution of the intensity of the XPS signal from the core level K3.
  • a diffraction plate corresponding perfectly to such a 2x3 surface corresponds to a coverage rate of 2/3 of monolayer.
  • the second step is the formation of atomic lines of silicon on the surface of SiC. On this subject, see document [1].
  • New anneals allow the density of these lines to be reduced in a controlled manner.
  • the third step is to deposit potassium atoms on this surface.
  • the procedure to follow is given below.
  • the SiC surface with the atomic lines of silicon is placed about 3 cm from the potassium source. Then potassium atoms are deposited on the surface of SiC. These potassium atoms are deposited preferentially between the atomic lines of silicon. The quantity of silicon to be deposited must correspond to the filling of the space between the lines.
  • This space between the lines corresponds to an order of type c (4x2).
  • the inventors demonstrated with the UPS / XPS technique as well as with the STM / STS technique that, when the surface is saturated with potassium, this order becomes 2x1 and takes on a metallic character. On the other hand, the silicon lines do not become metallic, even when the surface is saturated with potassium.
  • any adsorbate having the following two properties:
  • the adsorbate is selectively adsorbed between the silicon lines
  • the adsorbate causes the spreading of the space located between the lines (that is to say the metallization of the type c reconstruction (4x2) of cubic SiC).
  • the present invention is not limited to the use of hydrogen, oxygen or metals for the formation of nanobands between the atomic lines: materials made up of inorganic molecules, for example halogens, can be used
  • organic molecules for example polymers, including conductive polymers and organic semiconductor polymers (for example PCDTA or Thiols), benzene or pentacene molecules for example, and one-dimensional organic molecules, for example to make bridges or contacts.
  • polymers including conductive polymers and organic semiconductor polymers (for example PCDTA or Thiols), benzene or pentacene molecules for example, and one-dimensional organic molecules, for example to make bridges or contacts.
  • the same process is used, for example, as for oxygen; the surface is exposed to molecules under vacuum or vaporized (for example in the case of Br, S and I).

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
PCT/FR2002/001326 2001-04-19 2002-04-17 Procede de fabrication de nanostructures unidimensionnelles et nanostructures obtenues par ce procede WO2002085778A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002583317A JP4387672B2 (ja) 2001-04-19 2002-04-17 一次元ナノ構造の作製方法及びその方法により得られたナノ構造
EP02727669A EP1381561A1 (de) 2001-04-19 2002-04-17 Verfahren zur herstellung eindimensionaler nanostrukturen und so erhaltene nanostrukturen
US10/475,269 US20040132242A1 (en) 2001-04-19 2002-04-17 Method for the production of one-dimensional nanostructures and nanostructures obtained according to said method
CA002444865A CA2444865A1 (fr) 2001-04-19 2002-04-17 Procede de fabrication de nanostructures unidimensionnelles et nanostructures obtenues par ce procede

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0105314A FR2823739B1 (fr) 2001-04-19 2001-04-19 Procede de fabrication de nanostructures unidimensionnelles et nanostructures obtenues par ce procede
FR01/05314 2001-04-19

Publications (1)

Publication Number Publication Date
WO2002085778A1 true WO2002085778A1 (fr) 2002-10-31

Family

ID=8862481

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2002/001326 WO2002085778A1 (fr) 2001-04-19 2002-04-17 Procede de fabrication de nanostructures unidimensionnelles et nanostructures obtenues par ce procede

Country Status (6)

Country Link
US (1) US20040132242A1 (de)
EP (1) EP1381561A1 (de)
JP (1) JP4387672B2 (de)
CA (1) CA2444865A1 (de)
FR (1) FR2823739B1 (de)
WO (1) WO2002085778A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2871936A1 (fr) * 2004-06-21 2005-12-23 Commissariat Energie Atomique Procede de metallisation de la surface prealablement passivee d'un materiau semi conducteur et materiau obtenu par ce procede

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2841892B1 (fr) * 2002-07-05 2005-05-06 Commissariat Energie Atomique Nano-objets metalliques, formes sur des surfaces de carbure de silicium, et procede de fabrication de ces nano-objets
FR2887866B1 (fr) * 2005-06-30 2007-08-17 Commissariat Energie Atomique Nanostructures a resistance differentielle negative et procede de fabrication de ces nanostructures
EP1897145A1 (de) * 2005-06-30 2008-03-12 Commissariat A L'energie Atomique Nanostrukturen mit negativem differentiellem widerstand und herstellungsverfahren dafür
FR2888399B1 (fr) * 2005-07-05 2008-03-14 Commissariat Energie Atomique Substrat, notamment en carbure de silicium, recouvert par une couche mince de nitrure de silicium stoechiometrique, pour la fabrication de composants electroniques, et procede d'obtention d'une telle couche

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998027578A1 (fr) * 1996-12-16 1998-06-25 Commissariat A L'energie Atomique Fils atomiques de grande longueur et de gande stabilite, procede de fabrication de ces fils, application en nano-electronique
EP0947466A1 (de) * 1997-03-21 1999-10-06 Japan Fine Ceramics Center Verfahren zur herstellung von kohlenstoffnanoröhren, verfahren zur herstellung von kohlenstoffnanoröhrenfilm und struktur versehen mit kohlenstoffnanoröhrenfilm
FR2786794A1 (fr) * 1998-12-02 2000-06-09 Commissariat Energie Atomique Couche monoatomique et monocristalline de grande taille, en carbone de type diamant, et procede de fabrication de cette couche

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5318915A (en) * 1993-01-25 1994-06-07 North Carolina State University At Raleigh Method for forming a p-n junction in silicon carbide
FR2801723B1 (fr) * 1999-11-25 2003-09-05 Commissariat Energie Atomique Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche
FR2823770B1 (fr) * 2001-04-19 2004-05-21 Commissariat Energie Atomique Procede de traitement de la surface d'un materiau semiconducteur, utilisant notamment l'hydrogene, et surface obtenue par ce procede

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998027578A1 (fr) * 1996-12-16 1998-06-25 Commissariat A L'energie Atomique Fils atomiques de grande longueur et de gande stabilite, procede de fabrication de ces fils, application en nano-electronique
EP0947466A1 (de) * 1997-03-21 1999-10-06 Japan Fine Ceramics Center Verfahren zur herstellung von kohlenstoffnanoröhren, verfahren zur herstellung von kohlenstoffnanoröhrenfilm und struktur versehen mit kohlenstoffnanoröhrenfilm
FR2786794A1 (fr) * 1998-12-02 2000-06-09 Commissariat Energie Atomique Couche monoatomique et monocristalline de grande taille, en carbone de type diamant, et procede de fabrication de cette couche

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SOUKIASSIAN P ET AL: "Highly stable Si atomic line formation on the beta -SiC(100) surface", PHYSICAL REVIEW LETTERS, 29 SEPT. 1997, APS, USA, vol. 79, no. 13, pages 2498 - 2501, XP001051684, ISSN: 0031-9007 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2871936A1 (fr) * 2004-06-21 2005-12-23 Commissariat Energie Atomique Procede de metallisation de la surface prealablement passivee d'un materiau semi conducteur et materiau obtenu par ce procede
WO2006005869A1 (fr) * 2004-06-21 2006-01-19 Commissariat A L'energie Atomique Procede de metallisation de la surface prealablement passivee d'un materiau semiconducteur et materiau obtenu par ce procede

Also Published As

Publication number Publication date
EP1381561A1 (de) 2004-01-21
JP2004524984A (ja) 2004-08-19
US20040132242A1 (en) 2004-07-08
FR2823739B1 (fr) 2003-05-16
FR2823739A1 (fr) 2002-10-25
JP4387672B2 (ja) 2009-12-16
CA2444865A1 (fr) 2002-10-31

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