EP1365445A4 - Procede de prediction de forme de travail, procede de determination d'exigences de travail, procede de travail, systeme de travail, procede de fabrication d'un dispositif a semiconducteurs, programme informatique et support de stockage de programme informatique - Google Patents

Procede de prediction de forme de travail, procede de determination d'exigences de travail, procede de travail, systeme de travail, procede de fabrication d'un dispositif a semiconducteurs, programme informatique et support de stockage de programme informatique

Info

Publication number
EP1365445A4
EP1365445A4 EP02737613A EP02737613A EP1365445A4 EP 1365445 A4 EP1365445 A4 EP 1365445A4 EP 02737613 A EP02737613 A EP 02737613A EP 02737613 A EP02737613 A EP 02737613A EP 1365445 A4 EP1365445 A4 EP 1365445A4
Authority
EP
European Patent Office
Prior art keywords
working
computer program
semiconductor device
storage medium
manufacturing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP02737613A
Other languages
German (de)
English (en)
Other versions
EP1365445A1 (fr
EP1365445B1 (fr
Inventor
Tatsuya Senga
Akira Ishikawa
Takehiko Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of EP1365445A1 publication Critical patent/EP1365445A1/fr
Publication of EP1365445A4 publication Critical patent/EP1365445A4/fr
Application granted granted Critical
Publication of EP1365445B1 publication Critical patent/EP1365445B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
EP02737613A 2001-01-31 2002-01-15 Procede de prediction de forme de travail, procede de determination d'exigences de travail, procede de travail, systeme de travail, procede de fabrication d'un dispositif a semiconducteurs, programme informatique et support de stockage de programme informatique Expired - Lifetime EP1365445B1 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001024882 2001-01-31
JP2001024882 2001-01-31
JP2001268610A JP5002875B2 (ja) 2001-01-31 2001-09-05 加工形状の予測方法、加工条件の決定方法、加工方法、加工システム、半導体デバイスの製造方法、計算機プログラム、及び計算機プログラム記憶媒体
JP2001268410 2001-09-05
PCT/JP2002/000182 WO2002061817A1 (fr) 2001-01-31 2002-01-15 Procede de prediction de forme de travail, procede de determination d'exigences de travail, procede de travail, systeme de travail, procede de fabrication d'un dispositif a semiconducteurs, programme informatique et support de stockage de programme informatique

Publications (3)

Publication Number Publication Date
EP1365445A1 EP1365445A1 (fr) 2003-11-26
EP1365445A4 true EP1365445A4 (fr) 2006-11-22
EP1365445B1 EP1365445B1 (fr) 2007-12-05

Family

ID=26608725

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02737613A Expired - Lifetime EP1365445B1 (fr) 2001-01-31 2002-01-15 Procede de prediction de forme de travail, procede de determination d'exigences de travail, procede de travail, systeme de travail, procede de fabrication d'un dispositif a semiconducteurs, programme informatique et support de stockage de programme informatique

Country Status (8)

Country Link
US (2) US7686673B2 (fr)
EP (1) EP1365445B1 (fr)
JP (1) JP5002875B2 (fr)
KR (1) KR100846685B1 (fr)
CN (1) CN1225010C (fr)
DE (1) DE60223905T2 (fr)
TW (1) TW521341B (fr)
WO (1) WO2002061817A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5002875B2 (ja) * 2001-01-31 2012-08-15 株式会社ニコン 加工形状の予測方法、加工条件の決定方法、加工方法、加工システム、半導体デバイスの製造方法、計算機プログラム、及び計算機プログラム記憶媒体
KR20040101292A (ko) * 2002-03-20 2004-12-02 가부시키가이샤 니콘 가공 조건의 결정 방법, 가공 조건 결정 시스템, 가공시스템, 가공 조건 결정 계산기 프로그램, 프로그램 기록매체 및 반도체 디바이스의 제조 방법
US8412370B2 (en) * 2005-04-01 2013-04-02 Nikon Corporation Polishing apparatus with dressing position setting means
JP2009140956A (ja) * 2007-12-03 2009-06-25 Elpida Memory Inc 形状予測シミュレータ、方法およびプログラム
CN102380816A (zh) * 2010-08-30 2012-03-21 旺宏电子股份有限公司 化学机械抛光方法与系统
CN102975110A (zh) * 2012-12-26 2013-03-20 上海宏力半导体制造有限公司 化学机械研磨速率控制方法
JP2016058724A (ja) * 2014-09-11 2016-04-21 株式会社荏原製作所 処理モジュール、処理装置、及び、処理方法
WO2016117485A1 (fr) 2015-01-19 2016-07-28 株式会社荏原製作所 Procédé de simulation de polissage pour processus de polissage et dispositif de polissage
CN107887265A (zh) * 2016-09-23 2018-04-06 清华大学 抛光设备的抛光方法
CN111421462B (zh) * 2019-01-08 2022-03-22 中芯国际集成电路制造(上海)有限公司 化学机械研磨方法
CN115771102B (zh) * 2022-11-30 2024-02-27 大连理工大学 一种应用于双面研磨工艺的数字孪生系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1044028A (ja) * 1996-08-06 1998-02-17 Sony Corp 研磨シミュレーション方法
JPH1174235A (ja) * 1997-08-29 1999-03-16 Sony Corp 研磨シミュレーション
JPH11126765A (ja) * 1997-10-22 1999-05-11 Toshiba Corp 研磨シミュレーション方法および研磨シミュレーション方法を記録した記録媒体および研磨方法
JP2001219369A (ja) * 2000-02-08 2001-08-14 Sumitomo Metal Ind Ltd 研磨形状予測方法及び研磨方法並びに研磨装置

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
US5460034A (en) * 1992-07-21 1995-10-24 The United States Of America As Represented By The Secretary Of The Air Force Method for measuring and analyzing surface roughness on semiconductor laser etched facets
US5599423A (en) * 1995-06-30 1997-02-04 Applied Materials, Inc. Apparatus and method for simulating and optimizing a chemical mechanical polishing system
WO1998014306A1 (fr) * 1996-10-04 1998-04-09 Obsidian, Inc. Procede et systeme de commande d'enlevement d'epaisseur par polissage mecanique et chimique
JPH11207607A (ja) * 1998-01-22 1999-08-03 Japan Energy Corp 研磨方法及びＩｎＰ基板
JP2000005988A (ja) * 1998-04-24 2000-01-11 Ebara Corp 研磨装置
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
US6241847B1 (en) * 1998-06-30 2001-06-05 Lsi Logic Corporation Method and apparatus for detecting a polishing endpoint based upon infrared signals
JP2000024914A (ja) * 1998-07-03 2000-01-25 Hitachi Ltd 半導体ウエハの研磨装置
US6169931B1 (en) * 1998-07-29 2001-01-02 Southwest Research Institute Method and system for modeling, predicting and optimizing chemical mechanical polishing pad wear and extending pad life
JP2000254860A (ja) * 1999-03-08 2000-09-19 Nikon Corp 研磨装置
JP2001237206A (ja) * 1999-12-15 2001-08-31 Matsushita Electric Ind Co Ltd 平坦化加工方法
US20020013122A1 (en) * 1999-12-22 2002-01-31 Nikon Corporation Process and apparatus for chemimechanically polishing a substrate
US6449524B1 (en) * 2000-01-04 2002-09-10 Advanced Micro Devices, Inc. Method and apparatus for using equipment state data for run-to-run control of manufacturing tools
US6290572B1 (en) * 2000-03-23 2001-09-18 Micron Technology, Inc. Devices and methods for in-situ control of mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
JP5002875B2 (ja) * 2001-01-31 2012-08-15 株式会社ニコン 加工形状の予測方法、加工条件の決定方法、加工方法、加工システム、半導体デバイスの製造方法、計算機プログラム、及び計算機プログラム記憶媒体
US6821794B2 (en) * 2001-10-04 2004-11-23 Novellus Systems, Inc. Flexible snapshot in endpoint detection
JP3784330B2 (ja) * 2002-01-30 2006-06-07 株式会社ジェイテクト 数値制御研削盤を制御する創成研削用ｎｃデータの補正方法及びその方法を実施する数値制御研削盤

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1044028A (ja) * 1996-08-06 1998-02-17 Sony Corp 研磨シミュレーション方法
JPH1174235A (ja) * 1997-08-29 1999-03-16 Sony Corp 研磨シミュレーション
US6337271B1 (en) * 1997-08-29 2002-01-08 Sony Corporation Polishing simulation
JPH11126765A (ja) * 1997-10-22 1999-05-11 Toshiba Corp 研磨シミュレーション方法および研磨シミュレーション方法を記録した記録媒体および研磨方法
JP2001219369A (ja) * 2000-02-08 2001-08-14 Sumitomo Metal Ind Ltd 研磨形状予測方法及び研磨方法並びに研磨装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO02061817A1 *

Also Published As

Publication number Publication date
EP1365445A1 (fr) 2003-11-26
US20040053558A1 (en) 2004-03-18
TW521341B (en) 2003-02-21
US20100233937A1 (en) 2010-09-16
CN1484851A (zh) 2004-03-24
EP1365445B1 (fr) 2007-12-05
JP2002305165A (ja) 2002-10-18
WO2002061817A1 (fr) 2002-08-08
JP5002875B2 (ja) 2012-08-15
CN1225010C (zh) 2005-10-26
DE60223905T2 (de) 2008-11-13
US7686673B2 (en) 2010-03-30
KR20030074653A (ko) 2003-09-19
US9031687B2 (en) 2015-05-12
KR100846685B1 (ko) 2008-07-16
DE60223905D1 (de) 2008-01-17

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