EP1360343A1 - Dispositif de revetement de type ceramique d'un substrat - Google Patents

Dispositif de revetement de type ceramique d'un substrat

Info

Publication number
EP1360343A1
EP1360343A1 EP02701200A EP02701200A EP1360343A1 EP 1360343 A1 EP1360343 A1 EP 1360343A1 EP 02701200 A EP02701200 A EP 02701200A EP 02701200 A EP02701200 A EP 02701200A EP 1360343 A1 EP1360343 A1 EP 1360343A1
Authority
EP
European Patent Office
Prior art keywords
substrate
coating
layer
ceramic
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP02701200A
Other languages
German (de)
English (en)
Inventor
Thomas Beck
Thomas Weber
Alexander Schattke
Sascha Henke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP1360343A1 publication Critical patent/EP1360343A1/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/339—Synthesising components

Definitions

  • the invention relates to a device for ceramic-like coating of a substrate according to the preamble of claim 1.
  • ceramic-like layers with excellent mechanical, electrical, optical and chemical properties can be produced.
  • Appropriate methods have long been used for the coating of tools to extend the service life or to increase the life of mechanically stressed components or machine elements, such as. B. shafts, bearing components, pistons, gears or the like, and used for the decorative design of surfaces.
  • metallic compounds such as. B. high-melting oxides, nitrides and carbides of aluminum, titanium, zirconium, chromium or silicon are used.
  • the titanium-based coating systems such as TiN, TiCN or TiAlN coating systems, are mainly used as wear protection on cutting tools.
  • Superhard materials are also known which represent a combination of a nanocrystalline (nc), hard transition metal nitride Me n N with amorphous (a) Si 3 N 4 .
  • nc-MeN / a-SI 3 N 4 composite materials for example, the hardness increases sharply with decreasing crystallite size below about 4 to 5 nanometers and approximates that of the diaantes at 2 to 3 nanometers.
  • the multi-phase structure of the coating leads, for example, to layers with a hardness> 2500 HV with comparatively low brittleness.
  • Corresponding layers are produced in particular by plasma-activated chemical vapor deposition (PACVD) processes at temperatures of approximately 500 to 600 ° C.
  • PSVD plasma-activated chemical vapor deposition
  • the comparatively high temperature of the substrate and consequently the coating enable diffusion of correspondingly amorphously deposited coating components and thus the formation of nanocrystallites in an amorphous matrix.
  • the object of the invention is to propose a device for ceramic-like coating of a substrate, means for applying a material, in particular by means of a plasma, to a surface of the substrate being provided which, compared to the prior art, also include a ceramic-like coating of comparatively temperature-sensitive Allows substrates.
  • This object is achieved on the basis of a device of the type mentioned in the introduction by the characterizing features of claim 1.
  • a device is characterized in that an energy source that is different from a material source of the material provided for coating is provided for locally defined energy input into the material located in front of and / or on the surface.
  • this enables, in particular, a nanostructured ceramic, high-quality layer system to be implemented within a layer, the nanostructured metal crystallites with a crystal size of up to approximately 100 nm, for example consisting of MeO, MeN or MeC, in a further structure which is amorphous, crystalline or metallic and e.g. consists of amorphous silicon compounds or the like.
  • the nanostructured layer contains at least one crystalline hard material phase.
  • the layer hardness is significantly increased, for example hardnesses of over 4000 HV can be achieved when TiO crystallites are embedded.
  • the brittleness of the ceramic layers is reduced, in particular by the nanostructuring.
  • the entire layer system can be one or more layers, chemically and partially graded and / or ungraded.
  • a run-in layer can be realized by a carbon-containing cover layer.
  • corresponding nanocomposites can advantageously be deposited, for example at substrate temperatures T ⁇ 400 ° C., preferably at temperatures T ⁇ 250 ° C., so that comparatively temperature-sensitive substrates can also be coated.
  • the supply of kinetic energy for increasing the surface mobility and thus for the diffusion of the deposited material components preferably takes place via an additional plasma excitation, so that compared to the prior art in particular much higher ion densities can be achieved, which is also due to a corresponding change in the color and the brightness of the Plasma is made clear.
  • the plasma excitation or higher ion density and thus higher energy density the initially amorphously deposited particles on the substrate receive enough energy for diffusion to be able to form, for example, nanometer-sized TiO crystallites on the substrate.
  • Further plasma sources are also conceivable for this purpose, which in particular at lower pressure, e.g. be operated in a fine vacuum.
  • the high ion energy or ion density preferably prevents the build-up of microcrystallites which have already formed, and at the same time favors the advantageous nanocrystalline growth.
  • This can include various three-dimensional components can be coated accordingly.
  • the energy is introduced into the material located on the surface, so that the initially amorphously deposited particles on the substrate again have enough energy available for diffusion, in turn, for example, cubic, hexagonal, metallic or on the substrate to be able to form other nanometer-sized crystallites.
  • a microwave unit is advantageously provided for the energy input, so that, for example, the ion density of the material can be increased by additional ionization during sputtering.
  • advantageous ionization densities of approximately 10 10 to 10 13 ions per cm 3 can be achieved, so that the material which is initially amorphously deposited on the substrate has sufficient energy available for diffusion.
  • microwave radiation for so-called electron cyclotron resonance excitation (ECR) is preferably provided.
  • an ion source unit is provided for the energy input, so that in turn advantageous plasma excitation or an increase in the ionization density is realized, thereby permitting the diffusion of the initially amorphously deposited material on the substrate.
  • a DC or RF excited hollow cathode unit or the like can also be provided for the energy input according to the invention.
  • Common to these units is the locally defined energy input according to the invention, preferably into the material located in front of the surface of the substrate.
  • UV unit or the like is advantageously provided. These units are preferably used to introduce additional kinetic energy for the diffusion of the particles initially deposited amorphously on the substrate into the material on the surface of the substrate.
  • a cooling device for cooling the substrate is provided. This advantageously ensures that the substrate temperature is reduced as far as possible. In particular, this measure makes it possible to coat more temperature-sensitive substrates.
  • the cooling device is preferably implemented by means of a metallic or other highly thermally conductive substrate carrier.
  • an advantageous coolant can also flow through the cooling device, so that a further reduction in the substrate temperature can be achieved.
  • a voltage source for generating an electrical field is provided between the material source and the substrate. This ensures that, for example, an advantageous potential profile is generated between the material source and the substrate and that charging of the substrate, in particular by means of an RF substrate or bias voltage, is prevented.
  • FIG. 1 shows a schematic structure of a device according to the invention
  • FIG. 2 shows a schematic 3D representation of a section of a coating produced according to the invention
  • 3 shows a schematic representation of a multilayer layer produced according to the invention
  • FIG. 4 shows a schematic illustration of a further multilayer layer produced according to the invention
  • FIG. 5 shows a schematic representation of a third multilayer layer produced according to the invention.
  • FIG. 1 schematically shows a section of a coating chamber 1 during a coating process.
  • a layer 3 is applied to a substrate 2 at a chamber pressure of approximately 10 "3 to 10 " 2 mbar.
  • a first material 5 is atomized by a sputter source 4.
  • a second material 7 is sputtered with the material 5 simultaneously or with a time delay from a sputter source 6.
  • the energy input locally defined according to the invention into the two materials 5, 7 takes place by means of the plasma 8 shown schematically in FIG is provided as plasma gas.
  • the plasma 8 is generated, for example, with a microwave radiation of the frequency 2.45 GHz with a layer-dependent power of preferably 1 kW.
  • the microwave radiation is coupled in, for example, via a rod antenna (not shown in more detail).
  • the sputtering source 4 can comprise a metal, a metal oxide target or a mixed target, wherein the metal can be, for example, titanium, chromium, copper, zirconium or the like.
  • a gas supply 9 and 10 two different reaction gases can be metered in as required during the coating.
  • oxygen can be metered into the coating chamber 1 by the gas supply 9 in order to produce oxidic ceramic layers. If a sputter source 4 with a metal oxide target is used, oxidic ceramic layers can also be produced without an oxygen supply by means of the gas supply 9.
  • the sputter source 6 can comprise, for example, a silicon and / or carbon target, so that the sputter source 6 enables the formation of the amorphous matrix, such as silicon nitride or the like, in particular with nitrogen supplied by the gas supply 10.
  • the gas supply 10 can also supply other gases, so that other matrices can also be produced if required.
  • the reaction of the sputtering components mostly takes place on the substrate.
  • additional energy is introduced into the atomized or deposited particles by the plasma 8 by means of the ECR microwave source without the substrate being heated to any significant extent.
  • the substrate temperature can be kept comparatively low. Due to the energy introduced by the ECR microwave source, particles of nanometer size, for example titanium oxide particles, are formed in the coating 3 on the substrate by diffusion of the initially amorphously deposited particles. Consequently, the high temperatures of the substrate which lead to the formation of the nanostructured coating according to the prior art are not required, so that temperature-sensitive substrates can also be coated according to the invention.
  • the coating is scalable, without, for example, the substrate having to be used as an electrode for compacting the applied coating.
  • a special embodiment of the invention comprises a voltage source which, for example, provides an RF bias voltage on the substrate. In this way, primarily only charging of the substrate 2 is prevented, so that in particular the deposition of the materials 5, 7 does not change disadvantageously even over a comparatively longer coating period.
  • the nanocrystallites 11 can be TiO, TiN, ZrN, ZrO, TiC, SiC, carbon or corresponding nanocrystallites 11 and various mixtures thereof with grain sizes in the range from 5 to 20 nm.
  • the proportion of the surface volume in the total volume is very high and the interfaces between the nanocrystallites 11 and the amorphous matrix 12 are comparatively sharp.
  • FIG. 3 schematically shows a layer structure of a coating 3 produced according to the invention, the nanoscale multilayer layer 3 being applied to the substrate 2.
  • layer 3 comprises an adhesion promoter 13, which can optionally be applied and, for example, consists of a metallic layer, such as an approximately 300 nm thick titanium adhesive layer.
  • a layer according to FIG. 2, for example an amorphous silicon nitride layer 12 with nanoscale titanium oxide and / or carbon particles 11, can be applied as the next layer 14.
  • a cover layer 15 can optionally be applied, which preferably consists of amorphous carbon ,
  • three-dimensional components such as drills or the like can also be coated with a corresponding nanoscale multilayer layer 3.
  • the three-layer structure ensures, in particular by means of the adhesion promoter 13, good adhesion of the superhard ceramic metal oxide layer 14 to the substrate 2.
  • the cover layer 15 ensures, for example with a similar hardness, a high coefficient of friction, so that in particular the frictional properties of the nanostructured layer in a run-in phase of mechanically stressed components or machine elements, such as. B-. Shafts, bearing components, pistons, gears or the like, the two friction partners or over the entire life of the two friction partners is improved.
  • a layer structure according to FIG. 4 can be provided.
  • the adhesion promoter 13 and a layer 14, which for example comprises an amorphous carbon network 12 with nanoscale titanium oxide particles 11, are optionally provided.
  • an alternative layer structure can in turn be provided with an optional adhesion promoter 13 and an amorphous carbon layer 16 and a layer 14 with an amorphous silicon nitride layer 12 and nanoscale titanium oxide particles 11.
  • nanostructured metal oxide layers 14 can also be applied to diamond-like carbon layers 16, for example in order to improve the running-in behavior of wear protection layers with a lower coefficient of friction.
  • nanostructured metal oxide layers 14 with or without inclusions or Upper cover layer 15 can be used as a wear protection layer for the highest load collectives with novel multifunctional properties. For example, due to their non-stick and advantageous rubbing properties, these can be used as dry lubricant layers for machining stainless steel, aluminum or the like.
  • self-cleaning properties of titanium oxide layers can be combined with anti-scratch properties.
  • Oxidic ceramic layers are generally advantageous because they have a high chemical inertness, are optically transparent and have a lower coefficient of friction than, for example, nitride layers.
  • ceramic oxide layers have so far been used only to a limited extent in production, primarily due to the more sensitive, reactive process control than with nitridic layer systems.
  • the stoichiometric oxygen content can be set here, for example, by regulating optical emission.
  • oxidic ceramics are characterized by good rubbing properties and high chemical resistance with high layer hardness.
  • nanocrystalline powder material can generally be supplied to an ion source or synthesized by means of this.

Abstract

L'invention concerne un dispositif de revêtement de type céramique d'un substrat (2), comportant des moyens d'application d'un matériau (5, 7), notamment au moyen d'un plasma (8), sur une surface du substrat (2). L'invention vise à mettre en oeuvre un revêtement céramique (3) de substrats (2) sensibles à la température. A cet effet, le dispositif selon l'invention comporte une source d'énergie différente d'une source de matériau (4, 6) destinée à émettre le matériau de revêtement (5, 7), ladite source d'énergie servant à l'apport d'énergie défini localement dans le matériau (3, 5, 7, 8) situé devant et/ou sur la surface.
EP02701200A 2001-02-02 2002-01-18 Dispositif de revetement de type ceramique d'un substrat Ceased EP1360343A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10104611A DE10104611A1 (de) 2001-02-02 2001-02-02 Vorrichtung zur keramikartigen Beschichtung eines Substrates
DE10104611 2001-02-02
PCT/DE2002/000138 WO2002061165A1 (fr) 2001-02-02 2002-01-18 Dispositif de revetement de type ceramique d'un substrat

Publications (1)

Publication Number Publication Date
EP1360343A1 true EP1360343A1 (fr) 2003-11-12

Family

ID=7672549

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02701200A Ceased EP1360343A1 (fr) 2001-02-02 2002-01-18 Dispositif de revetement de type ceramique d'un substrat

Country Status (5)

Country Link
US (1) US20040144318A1 (fr)
EP (1) EP1360343A1 (fr)
JP (1) JP2004518026A (fr)
DE (1) DE10104611A1 (fr)
WO (1) WO2002061165A1 (fr)

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Also Published As

Publication number Publication date
DE10104611A1 (de) 2002-08-14
US20040144318A1 (en) 2004-07-29
WO2002061165A1 (fr) 2002-08-08
JP2004518026A (ja) 2004-06-17

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