EP1345734B1 - Tampon de polissage en polyethylene reticule destine a polir de facon chimico-mecanique et appareil de polissage - Google Patents

Tampon de polissage en polyethylene reticule destine a polir de facon chimico-mecanique et appareil de polissage Download PDF

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Publication number
EP1345734B1
EP1345734B1 EP01998427A EP01998427A EP1345734B1 EP 1345734 B1 EP1345734 B1 EP 1345734B1 EP 01998427 A EP01998427 A EP 01998427A EP 01998427 A EP01998427 A EP 01998427A EP 1345734 B1 EP1345734 B1 EP 1345734B1
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EP
European Patent Office
Prior art keywords
polishing
pad
copper
closed cell
polyethylene foam
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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EP01998427A
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German (de)
English (en)
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EP1345734A1 (fr
Inventor
Yaw S. Obeng
Edward M. Yokley
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psiloQuest Inc
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psiloQuest Inc
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Priority claimed from US10/000,101 external-priority patent/US6846225B2/en
Application filed by psiloQuest Inc filed Critical psiloQuest Inc
Priority claimed from PCT/US2001/044177 external-priority patent/WO2002043922A1/fr
Publication of EP1345734A1 publication Critical patent/EP1345734A1/fr
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Publication of EP1345734B1 publication Critical patent/EP1345734B1/fr
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  • the present invention is directed to polishing pads used for creating a smooth, ultra-flat surface on such items as glass, semiconductors, dielectric/metal composites, magnetic mass storage media and integrated circuits. More specifically, the present invention relates to the selective mechanical and chemical polishing.. properties of a cross-linked polymer and its application to create pads suitable for polishing a substrate.
  • CMP Chemical-mechanical polishing
  • VLSI very large scale integration
  • the abrasive liquid slurry must be altered, and special formulations must be produced for each different substrate being polished. For example, some substrates require a high pH to be activated for polishing, while other substrates need a more acid environment. Still other substrates respond best to silica abrasives, while others require alumina or titanium abrasive particles.
  • the second critical consumable component in the CMP process is the polishing pad. It must be very flat, uniform across its entire surface, and resistant to the chemical nature of the slurry and have the right combination of stiffness and compressibility to minimize effects like dishing and erosion.
  • a third critical consumable component in the CMP process is the carrier film.
  • the carrier film attaches the wafer to its rotating holder must be: adequately flat and uniform in its thickness; an adhesive that will hold it tightly to the carrier but not too tightly to the wafer; and immune to the chemical environment in which it works.
  • shallow trench isolation (STI) technology the trench is backfilled with oxide and the wafer is planarized using CMP. The result is a more planar structure than typically obtained using LOCOS, and the deeper trench (as compared with LOCOS) provides superior latch up immunity. Also, by comparison with LOGOS.
  • STI substrates have a much reduced "bird' s beak" effect and thus theoretically provide higher packing density for circuit elements on the chips.
  • Planarity in the metal layers is a common objective, and is promoted by using plug interlevel connections.
  • a preferred approach to plug formation is to blanket deposit a thick metal layer on the interlevel dielectric and into the interlevel windows, and then remove the excess usirig CMP.
  • CMP is used for polishing an oxide, such as SiO 2 , Ta 2 O 5 , W 2 O 5 . It can also be used to polish nitrides such as Si 3 N 4 , TaN, TiN, and conductor materials used for interlevel plugs, e.g., Cu, W, Ti, and TiN.
  • CMP metal chemical-mechanical polishing
  • an oxidant is used to convert the top metal to metal oxides. These metal oxides are subsequently abraded in situ with some harder metal oxide abrasives. It certain applications, it is desirable to selectively polish such metal surfaces without removing the underlying nitride surface, for example. In such situations, selective metal polishing and precise end-point detection are desirable features.
  • oxide erosion areas dense in features (i.e., alignment marks) tend to oxidize at a faster rate than areas with sparse distributions. This uncontrollable oxidation of the metals forming the alignment marks is commonly referred to as oxide erosion. Additionally, manufacturers have observed that oxide erosion in dense arrays increases dramatically as batch sizes are increased.
  • polishing pads are composed of stacked polyurethane based materials, containing a softer bottom structure and harder top surface used for polishing.
  • Two examples of such pads in wide commercial use include the IC1400TM and IC1000/SUBAIVTM, pads, manufactured by Rodel®, Inc. (Phoenix, Az.).
  • Such polyurethane pads are subject to wear down and glazing due to hydrolysis during polishing, with consequent deleterious effects on the rate and uniformity of planarization. This in turn requires frequent reconditioning to restore the pad's surface properties, with a subsequent loss in productivity and increase in costs.
  • JP-A-09132661 discloses a CMP pad that includes a polyolefin resin that can be cross-linked and foamed and include polyethylene.
  • the present invention in one embodiment, provides a polishing pad comprising a polishing body comprising a material wherein said material is a cross-linked polymer.
  • the present invention provides a polishing apparatus.
  • This particular embodiment includes a mechanically driven carrier head, a polishing platen, and a polishing pad attached to the polishing platen.
  • the carrier head is positionable against the polishing platen to impart a polishing force against the polishing platen
  • the polishing pad includes a polishing body comprising a material wherein the material is a cross-linked polymer.
  • the polishing body can be used in a method of polishing a substrate.
  • the method comprises positioning a substrate having at least one layer of material located thereon against a polishing pad attached to a polishing apparatus wherein the polishing pad includes a polishing body comprising a cross-linked polymer; and polishing the layer of material against the polishing pad.
  • polishing pads containing a polishing body comprised of a closed cell crossed-linked polyethylene foam have unexpected desirable polishing properties.
  • pads formed from such material are capable of uniformly and rapidly removing a metal surface, such as copper, with relatively much slower removal rates of an underlying tantalum barrier layer and the silicon wafer.
  • the crosslinked polyethylene closed-cell foam may be VolaraTM, available from Merryweather Foam, Inc. (Anthony, NM); or AliplastTM, available JMS Plastics Supply, Inc. (Neptune, NJ), or from Atlas International (Sacramento, CA).
  • the closed cell cross-linked polyethylene foam of this invention may be fabricated by melt extrusion of the pellets into sheets, and then pads made by laser cutting, die cutting or similar process familiar to those skilled in the art of thermoplastic processing. Referring to FIGURE 1, these closed cell cross-linked polyethylene foam may then be incorporated into a polishing body 100 that includes a base pad 110, where a cross-linked polyethylene foam pad 120 forms a polishing surface located over the base pad 110.
  • a first adhesive material 130 such as epoxy or other materials well known to those skilled in the art, may be used to couple the base pad 110 to the closed cell cross-linked polyethylene foam pad 120.
  • the polishing pads thus formed may also have a second adhesive material 140, well known to those skilled in the art, applied to the platen side. The polishing pad may then be cleaned and packaged for use.
  • the polishing body 100 may then be employed in a variety of CMP processes by incorporation into a polishing apparatus 150.
  • the polishing apparatus 150 typically includes a mechanically driven carrier head 160, carrier ring 170, polishing platen 180, and a polishing pad that includes the polishing body 100 comprising the closed cell cross-linked polyethylene foam pad 120 of the present invention, attached to the polishing platen 180, optionally using the second adhesive 140.
  • the substrate to be polished 185 typically a wafer, may be attached to the carrier ring with the aid of a third adhesive 190 also well known to those skilled in the art.
  • the carrier head 160 is then positioned against the polishing platen 180 to impart a polishing force against the polishing platen 180, typically a repetitive, regular motion of the mechanically driven carrier head 160, while providing an appropriate slurry mixture well known to those skilled in the art.
  • substrates 185 may be polished by positioning the substrate 185, having at least one layer, on to the above-described polishing apparatus 150, and polishing the layer against the closed cell cross-linked polyethylene foam pad 120 of the present invention.
  • the substrate 185 has at least one layer of material that is a metal layer.
  • the metal layer is copper.
  • the substrate 185 is located on a semiconductor wafer. Closed cell cross-linked polyethylene foam pads 120 of the present invention are particularly suited for polishing in shallow trench isolation (STI) in integrated circuit fabrication or other fabrication techniques where large areas of field oxide or other dielectrics must be removed from the wafer to produce a planar surface prior to subsequent processing.
  • STI shallow trench isolation
  • the closed cell cross-linked polyethylene foam pad 120 of the present invention are also desirable for polishing interlevel plug materials such as W, Ti, Cu, Al, and other metals as well as nitrides or barrier materials such as Si 3 N 4 , TaN, TiN.
  • the polishing body of the present invention can be used a method to determine an endpoint for metal polishing.
  • the endpoint may be determined by detecting a change in the coefficient of friction or a change in an acoustic signal during substrate polishing using the cross-linked polymer pad 120 of the present invention associated with the transition from removing the metal layer to removing at least a portion of another layer.
  • Detection apparatus for determining changes in coefficient of friction or a change in an acoustic signal such as that described by CETR, Inc. (Campbell, CA), may be used.
  • a polishing apparatus was prepared according to the present invention by including a polishing pad whose polishing body comprised a closed cell cross-linked polyethylene foam, attaching the pad to a polishing platen; and attaching the platen to a mechanically driven carrier head.
  • the closed cell cross-linked polyethylene foam used was Type 6A or Type 10 Aliplast® (JMS Plastic Supplies, Neptune, N.J.). Both are cross-linked closed cell polyethylene foam having a medium density and hardness of about 34 Shore A (Type 6A) and about 60 Shore A (Type 10).
  • the blanket Copper polishing properties of polishing pads incorporating these materials were compared to two commercially available pads: an IC1400 pad, and an IC1000/SUBA IV pad stack (both manufactured by Rodel, Phoenix, Az) in two experimental protocols.
  • Contour plots of copper surfaces polished using the IC 1400 versus the A32 pad were measured electrically by measuring sheet resistance at 49 points distributed radially across the wafer. Texture maps were generated using software obtained from ResMat® Corporation (Resmat map model 487; Montreal, .Quebec, Canada). As illustrated in FIGURE 2, the depth of copper removed across the wafer using the IC 1400 pad ranged from 300 to .650 nanometers (3000 to 6500 ⁇ ), and from 200 to 550 nanometers (2000 to 5500 ⁇ ) in a second experiment (not shown). In contrast, the depth of copper removed using the A32 pad was more uniform, ranging from only 400 to 525 nanometers (4000 to 5250 ⁇ ).
  • the average and standard deviation for the removal rate of copper was compared for the IC1400 pad versus the A32 pad.
  • the copper removal rate and its standard deviation using the A32 pad (493.1 ⁇ 71.5 nanometers / min; 4931 ⁇ 715 ⁇ / min) was not significantly different than the removal rate obtained using the IC1400 pad (544.6 ⁇ 76 and 542.9 ⁇ 80.1 nanometers / min; 5446 ⁇ 760 and 5429 ⁇ 801 ⁇ / min, in two experiments).
  • Polishing using the A32 pad was continued until the copper layer was entirely removed and the Ta layer was polished for an additional two minutes.
  • the thickness of Ta removed narrowly ranged from 7.5 to 17.5 nanometers (75 to 175 ⁇ ), and the average rate of removal over all 49 measurement points was only about 4.1 nanometers /min (41 ⁇ / min).
  • polishing was continued until the entire Ta layer was removed, and the underlying TEOS wafer was polished.
  • the removal rate of the TEOS was about 4.5 nanometers / min (45 ⁇ / min).
  • the A32 pad polished the underlying Ta layer and TEOS wafer at much slower rates than the Copper layer. This shows that the A32 pad has a higher selectivity for Copper removal, as compared to Ta or Si.
  • the removal rate increased from 341.6 ⁇ 87.5 nanometers / min (3416 ⁇ 875 ⁇ / min), with a down force of 20.7 kPa (3 psi), to 682.6 ⁇ 49.1 nanometers / min (6826 ⁇ 491 ⁇ / min), with a down force of 34.5 kPa (5 psi).
  • the removal rate was relatively invariant at different table speeds.
  • the removal rate increased slightly from 341.6 ⁇ 87.5 nanometers /min (3416 ⁇ 875 ⁇ / min) with a table speed of 40 rpm, to 445.2 ⁇ 73.0 nanometers / min (4452 ⁇ 730 ⁇ / min) with a table speed of 80.
  • the blanket copper polishing properties of the A32 pad was compared to the IC1000/SUBA IV pad stack.
  • the comparison was performed using a Mode.1 FMT-A CMP tester (CETR, Inc., Campbell, Ca.), operated with a down force of 3 psi and table speed of 200 rpm.
  • the PMT-A CMP tester was equipped with both a coefficient of friction and an acoustic signal detector.
  • TEOS wafers having a 1600 nanometer (16,000 ⁇ ) thick copper surface and underlying 30 nanometer (300 ⁇ ) thick tantalum barrier layer were used.
  • the coefficient of friction measured by the tester was more uniform compared to the IC1000/SUBA IV pad stack. Moreover, during a 300 second polishing period, the IC1000/SUBA IV pad never completely removed the Copper layer, whereas the A32 pad removed the Cu layer in about 220 s, as determined by an increase the coefficient of friction when the Ta layer was reached (FIGURE 3), or as similarly determined by an decrease in the acoustic signal (not shown).
  • the selectivity of Cu over Ta removal as characterized by the ratio of rates of Cu to Ta removal were about 33.5 and 27, for the IC1000/SUBA IV and A40 pads, respectively.
  • the Cu removal rate was about 330 500 nanometers / min (3,300 5000 ⁇ / min). Both A32 and A40.pads were able to effectively polish wafers having a tungsten surface.

Claims (4)

  1. Tampon de polissage comprenant un corps de polissage comprenant une mousse de polyéthylène réticulé à cellules fermées, caractérisé en ce que ladite mousse de polyéthylène réticulé à cellules fermées a une dureté allant de 34 Shore A à 60 Shore A.
  2. Tampon de polissage selon la revendication 1, dans lequel ladite mousse de polyéthylène réticulé à cellules fermées a une dureté de 34 Shore A.
  3. Tampon de polissage selon la revendication 1, dans lequel ladite mousse de polyéthylène réticulé à cellules fermées a une dureté de 60 Shore A.
  4. Appareil de polissage comprenant :
    une tête de support entraînée mécaniquement :
    un plateau de polissage, ladite tête de support pouvant être positionnée contre ledit plateau de polissage pour appliquer une force de polissage contre ledit plateau de polissage ; et
    un tampon de polissage attaché audit plateau de polissage et comprenant ledit corps de polissage de la revendication 1.
EP01998427A 2000-11-29 2001-11-27 Tampon de polissage en polyethylene reticule destine a polir de facon chimico-mecanique et appareil de polissage Expired - Lifetime EP1345734B1 (fr)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US25029900P 2000-11-29 2000-11-29
US250299P 2000-11-29
2001-06-11
US30437501P 2001-07-10 2001-07-10
US304375P 2001-07-10
US10/000,101 US6846225B2 (en) 2000-11-29 2001-10-24 Selective chemical-mechanical polishing properties of a cross-linked polymer and specific applications therefor
PCT/US2001/044177 WO2002043922A1 (fr) 2000-11-29 2001-11-27 Tampon de polissage en polyéthylène réticulé destiné à polir de façon chimico-mecanique, appareil et procédé de polissage

Publications (2)

Publication Number Publication Date
EP1345734A1 EP1345734A1 (fr) 2003-09-24
EP1345734B1 true EP1345734B1 (fr) 2006-04-19

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EP01998427A Expired - Lifetime EP1345734B1 (fr) 2000-11-29 2001-11-27 Tampon de polissage en polyethylene reticule destine a polir de facon chimico-mecanique et appareil de polissage

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EP (1) EP1345734B1 (fr)
CN (1) CN1484566A (fr)
AU (1) AU2002217867A1 (fr)
DE (1) DE60118963T2 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI510328B (zh) * 2010-05-03 2015-12-01 Iv Technologies Co Ltd 基底層、包括此基底層的研磨墊及研磨方法
CN102554764A (zh) * 2012-02-15 2012-07-11 蔡桂芳 适用于超长超薄石英板的研磨抛光机及研磨抛光方法
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
KR102630261B1 (ko) 2014-10-17 2024-01-29 어플라이드 머티어리얼스, 인코포레이티드 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 ｃｍｐ 패드 구성
US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10946495B2 (en) * 2015-01-30 2021-03-16 Cmc Materials, Inc. Low density polishing pad
CN108698206B (zh) 2016-01-19 2021-04-02 应用材料公司 多孔化学机械抛光垫
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US20180134918A1 (en) * 2016-11-11 2018-05-17 Jh Rhodes Company, Inc. Soft polymer-based material polishing media
KR101945874B1 (ko) * 2017-08-07 2019-02-11 에스케이씨 주식회사 표면 처리된 연마패드용 윈도우 및 이를 포함하는 연마패드
CN116749093B (zh) * 2023-08-11 2023-11-07 太原理工大学 磁性磨具的制备工艺及基于磁性磨具的细长管内抛光装置
CN117840840B (zh) * 2024-03-08 2024-05-07 常州臻晶半导体有限公司 一种兆声辅助大直径碳化硅晶片检测设备及其检测方法

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DE60118963D1 (de) 2006-05-24
AU2002217867A1 (en) 2002-06-11
EP1345734A1 (fr) 2003-09-24
CN1484566A (zh) 2004-03-24
DE60118963T2 (de) 2006-12-21

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