EP1301950A1 - Method for the production and configuration of organic field-effect transistors (ofet) - Google Patents

Method for the production and configuration of organic field-effect transistors (ofet)

Info

Publication number
EP1301950A1
EP1301950A1 EP01984132A EP01984132A EP1301950A1 EP 1301950 A1 EP1301950 A1 EP 1301950A1 EP 01984132 A EP01984132 A EP 01984132A EP 01984132 A EP01984132 A EP 01984132A EP 1301950 A1 EP1301950 A1 EP 1301950A1
Authority
EP
European Patent Office
Prior art keywords
ofet
functional polymer
substrate
color
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01984132A
Other languages
German (de)
French (fr)
Inventor
Wolfgang Clemens
Adolf Bernds
Henning Rost
Walter Fix
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PolyIC GmbH and Co KG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP1301950A1 publication Critical patent/EP1301950A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60Forming conductive regions or layers, e.g. electrodes

Definitions

  • the object of the invention is therefore to provide a cost-effective and mass-production process for producing and structuring OFETs and a more powerful OFET because it is equipped with more structured layers.
  • the invention relates to an organic field-effect transistor (OFET), comprising at least the following layers on a substrate: a semiconducting layer between a source and a drain electrode, an insulation layer on top of the semiconducting one
  • OFET organic field-effect transistor
  • the invention also relates to a method for producing and structuring an OFET by printing at least one functional polymer onto a substrate, the functional polymer first being brought to a color-like consistency and then being printed onto the substrate.
  • color-like consistency it is meant that the functional polymers to be printed are related to conventional printing inks
  • Pad printing with silicone tampons achieves a high resolution that is suitable for structuring in the ⁇ m range.
  • the functional polymers are advantageously brought into a color-like consistency by incorporation into solvents.
  • ready-to-print mixtures are made from the following functional polymers with the following solvents:
  • Polyaniline (electrical conductor) is dissolved in cresol; Polythiophene (semiconductor) in chloroform and polyvinylphenol (insulator) in dioxane.
  • At least one dissolved functional polymer is first filled with a doctor blade into a “negative” of the layer to be printed.
  • a tampon eg made of silicone
  • the shaped functional polymer is then removed from the negative form, which is also called a cliché, and applied to the substrate and optionally there on finished layers.
  • production takes place in a continuous process, so that e.g. a tampon roll first rolls over a cliché and charges the functional polymer there and then rolls continuously over a substrate onto which it unloads the functional polymer, then it rolls over a cliché and then again over a substrate.
  • a tampon roll first rolls over a cliché and charges the functional polymer there and then rolls continuously over a substrate onto which it unloads the functional polymer, then it rolls over a cliché and then again over a substrate.
  • Printing enables the layer structure and structuring of the OFET to be implemented at the same time.
  • FIGS. 1 to 7 show the individual process steps of pad printing in a continuous process with a pad roll.
  • FIG. 1 shows the cliché 1 with the negatives 2 of the structure to be applied.
  • a squeegee 3 can be seen, which the functional polymer 4 lays along the cliché.
  • the negative 2 of the cliché is filled with functional polymer 4 and the doctor blade just slides on with the rest of the polymer on the cliché 1, which can rotate, for example.
  • FIG. 3 shows the large tampon roll 5, which picks up the finished structured functional polymer 4 from the cliché 3 and (see FIGS. 4 to 7) images it onto a substrate 6.
  • the finished and structured OFET 7 can be seen in FIG.
  • the invention provides an inexpensive and precise method for the production and structuring of OFETs by utilizing the solubility of at least one functional polymer of an OFET in that the functional polymer is applied to the prepared OFET or a substrate like a paint using a conventional printing method.
  • the manufacturing process can be used for the inexpensive manufacture of product and / or identification tags.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Printing Methods (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The invention relates to an economical and precise method for the production and configuration of OFETs, whereby the solubility of at least one functional polymer of an OFET is utilised to such a degree, that the functional polymer is deposited on the OFET, or a substrate, by means of a conventional printing process as for a colour.

Description

cυ cυ NJ M P1 cυ cυ NJ MP 1
Cπ σ Cπ σ Cπ σ CπCπ σ Cπ σ Cπ σ Cπ
Aufgabe der Erfindung ist daher ein kostengünstiges und massenfertigungstaugliches Verfahren zur Herstellung und Strukturierung von OFETs zur Verfügung zu stellen und einen leistungsstärkeren, weil mit mehr strukturierten Schichten aus- gestatteten, OFET.The object of the invention is therefore to provide a cost-effective and mass-production process for producing and structuring OFETs and a more powerful OFET because it is equipped with more structured layers.
Gegenstand der Erfindung ist ein Organischer Feld-Effekt- Transistor (OFET) , zumindest folgende Schichten auf einem Substrat umfassend: - eine halbleitende Schicht zwischen einer Source- und einer Drain-Elektrode eine Isolationsschicht auf über der halbleitendenThe invention relates to an organic field-effect transistor (OFET), comprising at least the following layers on a substrate: a semiconducting layer between a source and a drain electrode, an insulation layer on top of the semiconducting one
Schicht und eine Leiterschicht, wobei die Leiterschicht und zumindest eine der beiden anderen Schichten strukturiert ist. Ausserdem ist Gegenstand der Erfindung ein Verfahren zur Herstellung und Strukturierung eines OFETs durch Drucken von zumindest einem Funktionspolymer auf ein Substrat, wobei das Funktionspolymer zunächst in eine farbähnliche Konsistenz gebracht und dann auf das Substrat aufgedruckt wird.Layer and a conductor layer, wherein the conductor layer and at least one of the other two layers is structured. The invention also relates to a method for producing and structuring an OFET by printing at least one functional polymer onto a substrate, the functional polymer first being brought to a color-like consistency and then being printed onto the substrate.
Mit „farbähnliche Konsistenz" ist gemeint, dass die zu druckenden Funktionspolymere mit herkömmlichen Druckfarben in bezug aufBy "color-like consistency" it is meant that the functional polymers to be printed are related to conventional printing inks
• Viskosität der druckfertigen Mischung (bestimmt das Fließverhalten)Viscosity of the ready-to-print mixture (determines the flow behavior)
• Polymerkonzentration der druckfertigen Mischung (bestimmt die Schichtdicke) • Siedetemperatur des Lösungsmittels (bestimmt welches Druckverfahren einsetzbar ist) und• polymer concentration of the ready-to-print mixture (determines the layer thickness) • boiling point of the solvent (determines which printing process can be used) and
• Oberflächenspannung der druckfertigen Mischung (bestimmt die Benetzungsfähigkeit des Substrats oder anderer Schichten) vergleichbar sind. Prinzipiell sind alle Druckverfahren, mit denen Farbbilder erzeugt werden, auch zur Herstellung von OFETs geeignet. Es ist jedoch zu beachten, dass eine genügend hohe Ausflösung im μm-Bereich erzielt wird.• Surface tension of the ready-to-print mixture (determines the wettability of the substrate or other layers) are comparable. In principle, all printing processes with which color images are generated are also suitable for the production of OFETs. However, it should be noted that a sufficiently high resolution in the μm range is achieved.
Beim Tampondruck mit Silicontampons wird eine hohe Auflösung erzielt, die zur Strukturierung im μm-Bereich geeignet ist.Pad printing with silicone tampons achieves a high resolution that is suitable for structuring in the μm range.
Vorteilhafterweise werden die Funktionspolymere durch Ein- bringen in Lösungsmittel in eine farbähnliche Konsistenz gebracht. Beispielsweise werden aus folgenden Funktionspolymere mit folgenden Lösungmitteln druckfertige Mischungen hergestellt:The functional polymers are advantageously brought into a color-like consistency by incorporation into solvents. For example, ready-to-print mixtures are made from the following functional polymers with the following solvents:
Polyanilin (elektr. Leiter) wird in -Kresol gelöst; Polythiophen (Halbleiter) in Chloroform und Polyvinylphenol (Isolator) in Dioxan.Polyaniline (electrical conductor) is dissolved in cresol; Polythiophene (semiconductor) in chloroform and polyvinylphenol (insulator) in dioxane.
Nach einer Ausgestaltung wird zunächst zumindest ein gelöstes Funktionspolymer mit einem Rakel in ein „Negativ" der aufzu- druckenden Schicht gefüllt. Mit Hilfe eines Tampons (z.B. aus Silicon) wird das geformte Funktionspolymer dann aus der Negativform, die auch Klischee genannt wird, abgenommen und auf das Substrat und gegebenenfalls dort auf fertige Schichten aufgebracht .According to one embodiment, at least one dissolved functional polymer is first filled with a doctor blade into a “negative” of the layer to be printed. With the aid of a tampon (eg made of silicone), the shaped functional polymer is then removed from the negative form, which is also called a cliché, and applied to the substrate and optionally there on finished layers.
Nach einer besonders vorteilhaften Ausgestaltung des Verfahrens findet die Herstellung im kontinuierlichen Verfahren statt, so dass z.B. eine Tamponrolle zunächst über ein Klischee rollt und dort das Funktionspolymer auflädt und im wei- teren kontiuierlichen Verlauf über ein Substrat rollt, auf das es das Funktionspolymer wieder ablädt, danach rollt es wieder über ein Klischee und dann wieder über ein Substrat.According to a particularly advantageous embodiment of the process, production takes place in a continuous process, so that e.g. a tampon roll first rolls over a cliché and charges the functional polymer there and then rolls continuously over a substrate onto which it unloads the functional polymer, then it rolls over a cliché and then again over a substrate.
Je nach Klischee können damit auch verschiedene Strukturie- rungsprozesse in einem Umlauf einer grossen Tamponrolle untergebracht werden. Als Funktionspolymere können elektrische Leiter (z.B. Poly- anilin) , Halbleiter (z.B. Polythiophen) und Isolatoren (z.B. Polyvinylphenol) eingesetzt werden.Depending on the cliché, different structuring processes can be accommodated in one cycle of a large tampon roll. Electrical conductors (eg polyaniline), semiconductors (eg polythiophene) and insulators (eg polyvinylphenol) can be used as functional polymers.
Durch das Drucken werden gleichzeitig Schichtaufbau und Strukturierung des OFETs realisiert.Printing enables the layer structure and structuring of the OFET to be implemented at the same time.
Im folgenden soll die Erfindung anhand eines Ausführungsbei- spiels näher erläutert werden.The invention is to be explained in more detail below with the aid of an exemplary embodiment.
In den Figuren 1 bis 7 werden die einzelnen Prozessschritte eines Tampondrucks im kontinuierlichen Verfahren mit einer Tamponrolle gezeigt.FIGS. 1 to 7 show the individual process steps of pad printing in a continuous process with a pad roll.
In Figur 1 ist zunächst das Klischee 1 mit den Negativen 2 der aufzubringenden Struktur gezeigt. Vor den Negativ.Abdrücken ist ein Rakel 3 zu erkennen, das das Funktionspolymer 4 dem Klischee entlang räkelt. In Figur 2 ist das Negativ 2 des Klischees mit Funktionspolymer 4 gefüllt und das Rakel gleitet gerade mit dem Rest an Polymer auf dem Klischee 1, das sich beispielsweise drehen kann, weiter. In Figur 3 erkennt man die grosse Tamponrolle 5, die vom Klischee 3 das fertig strukturierte Funktionspolymer 4 aufnimmt und (vgl Figuren 4 bis 7) auf ein Substrat 6 abbildet. In Figur 7 ist das fertig aufgebrachte und strukturierte OFET 7 zu sehen.FIG. 1 shows the cliché 1 with the negatives 2 of the structure to be applied. In front of the negative prints, a squeegee 3 can be seen, which the functional polymer 4 lays along the cliché. In FIG. 2, the negative 2 of the cliché is filled with functional polymer 4 and the doctor blade just slides on with the rest of the polymer on the cliché 1, which can rotate, for example. FIG. 3 shows the large tampon roll 5, which picks up the finished structured functional polymer 4 from the cliché 3 and (see FIGS. 4 to 7) images it onto a substrate 6. The finished and structured OFET 7 can be seen in FIG.
Die Erfindung stellt ein kostengünstiges und präzises Verfahren zur Herstellung und Strukturierung von OFETs zur Verfügung, indem die Löslichkeit zumindest eines Funktionspolymers eines OFETs insofern ausgenützt wird, als das Funktionspolymer wie eine Farbe mit einem herkömmlichen Druckverfahren auf das vorbereitete OFET oder ein Substrat aufgebracht wird. Das Herstellungsverfahren kann zum kostengünstigen Fertigen von Produkt- und/oder Identifikations tags" eingesetzt werden.The invention provides an inexpensive and precise method for the production and structuring of OFETs by utilizing the solubility of at least one functional polymer of an OFET in that the functional polymer is applied to the prepared OFET or a substrate like a paint using a conventional printing method. The manufacturing process can be used for the inexpensive manufacture of product and / or identification tags.
Iiα Gegensatz zu der herkömmlichen Methode, mit denen lediglich die Leiterschicht eines OFETs strukturiert werden kann cπIiα Contrast with the conventional method, with which only the conductor layer of an OFET can be structured cπ

Claims

Patentansprüche claims
1. Organischer Feld-Effekt-Transistor, zumindest folgende Schichten auf einem Substrat umfassend: - eine halbleitende Schicht zwischen einer Source- und einer Drain-Elektrode eine Isolationsschicht auf über der halbleitenden Schicht und eine Leiterschicht, wobei die Leiterschicht und zumindest eine der beiden anderen Schichten strukturiert ist.1. Organic field-effect transistor, comprising at least the following layers on a substrate: a semiconducting layer between a source and a drain electrode, an insulation layer on top of the semiconducting layer and a conductor layer, the conductor layer and at least one of the other two Layers is structured.
2. Verfahren zur Herstellung eines OFETs durch Drucken von zumindest einem Funktionspolymer auf ein Substrat, wobei das Funktionspolymer zunächst in eine farbähnliche Konsistenz gebracht und dann auf das Substrat aufgedruckt wird.2. A method for producing an OFET by printing at least one functional polymer onto a substrate, the functional polymer first being brought to a color-like consistency and then being printed on the substrate.
3. Verfahren nach Anspruch 2, bei dem ein Druckverfahren, mit dem Farbbilder erzeugt werden können, unter Verwendung eines Funktionspolymers statt einer Farbe eingesetzt wird.3. The method according to claim 2, in which a printing method with which color images can be produced using a functional polymer instead of a color is used.
4. Verfahren nach einem der vorstehenden Ansprüche 2 oder 3, bei dem ein Tampondruckverfahren eingesetzt wird.4. The method according to any one of the preceding claims 2 or 3, in which a pad printing process is used.
5. Verfahren nach einem der vorstehenden Ansprüche 2 bis 4, bei dem ein Tampon aus Silicon eingesetzt wird.5. The method according to any one of the preceding claims 2 to 4, in which a tampon made of silicone is used.
6. Verfahren nach einem der vorstehenden Ansprüche 2 bis 5, bei dem eine Tamponrolle in einem kontinuierlichen Prozess eingesetzt wird.6. The method according to any one of the preceding claims 2 to 5, in which a tampon roll is used in a continuous process.
7. Verfahren nach einem der vorstehenden Ansprüche 2 bis 6, bei dem das Funktionspolymer durch Einbringen in ein Lösungsmittel in eine farbähnliche Konsistenz gebracht wird. 7. The method according to any one of the preceding claims 2 to 6, in which the functional polymer is brought into a color-like consistency by introduction into a solvent.
8. Verfahren nach einem der vorstehenden Ansprüche 2 bis 7, bei dem eine Auflösung und/oder Strukturierung im μm-Bereich realisiert wird.8. The method according to any one of the preceding claims 2 to 7, in which a resolution and / or structuring in the μm range is realized.
9. Verwendung eines OFETs nach Anspruch 1 zur Herstellung eines Identifikations- und/oder Produkt-„tags" .9. Use of an OFET according to claim 1 for producing an identification and / or product “tags”.
10. Verwendung des Verfahrens nach einem der Ansprüche 2 bis 8 zur Herstellung von Identifikations- und Produkt-„tags" . 10. Use of the method according to one of claims 2 to 8 for the production of identification and product "tags".
EP01984132A 2000-07-07 2001-06-27 Method for the production and configuration of organic field-effect transistors (ofet) Withdrawn EP1301950A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10033112A DE10033112C2 (en) 2000-07-07 2000-07-07 Process for the production and structuring of organic field-effect transistors (OFET), OFET produced thereafter and its use
DE10033112 2000-07-07
PCT/DE2001/002377 WO2002005360A1 (en) 2000-07-07 2001-06-27 Method for the production and configuration of organic field-effect transistors (ofet)

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EP1301950A1 true EP1301950A1 (en) 2003-04-16

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US (1) US6852583B2 (en)
EP (1) EP1301950A1 (en)
JP (1) JP2004503116A (en)
DE (1) DE10033112C2 (en)
WO (1) WO2002005360A1 (en)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002015264A2 (en) 2000-08-18 2002-02-21 Siemens Aktiengesellschaft Encapsulated organic-electronic component, method for producing the same and use thereof
WO2002015293A2 (en) * 2000-08-18 2002-02-21 Siemens Aktiengesellschaft Organic field-effect transistor (ofet), a production method therefor, an integrated circuit constructed from the same and their uses
DE10043204A1 (en) 2000-09-01 2002-04-04 Siemens Ag Organic field-effect transistor, method for structuring an OFET and integrated circuit
DE10044842A1 (en) * 2000-09-11 2002-04-04 Siemens Ag Organic rectifier, circuit, RFID tag and use of an organic rectifier
US20040026121A1 (en) * 2000-09-22 2004-02-12 Adolf Bernds Electrode and/or conductor track for organic components and production method thereof
DE10061299A1 (en) * 2000-12-08 2002-06-27 Siemens Ag Device for determining and / or forwarding at least one environmental influence, production method and use thereof
DE10061297C2 (en) 2000-12-08 2003-05-28 Siemens Ag Procedure for structuring an OFET
DE10105914C1 (en) 2001-02-09 2002-10-10 Siemens Ag Organic field effect transistor with photo-structured gate dielectric and a method for its production
EP1374138A2 (en) * 2001-03-26 2004-01-02 Siemens Aktiengesellschaft Device with at least two organic electronic components and method for producing the same
DE10126860C2 (en) * 2001-06-01 2003-05-28 Siemens Ag Organic field effect transistor, process for its manufacture and use for the construction of integrated circuits
DE10126859A1 (en) * 2001-06-01 2002-12-12 Siemens Ag Production of conducting structures used in organic FETs, illuminated diodes, organic diodes and integrated circuits comprises directly or indirectly forming conducting pathways
DE10151036A1 (en) 2001-10-16 2003-05-08 Siemens Ag Isolator for an organic electronic component
DE10151440C1 (en) * 2001-10-18 2003-02-06 Siemens Ag Organic electronic component for implementing an encapsulated partially organic electronic component has components like a flexible foil as an antenna, a diode or capacitor and an organic transistor.
DE10160732A1 (en) * 2001-12-11 2003-06-26 Siemens Ag OFET used e.g. in RFID tag, comprises an intermediate layer on an active semiconductor layer
DE10212640B4 (en) * 2002-03-21 2004-02-05 Siemens Ag Logical components made of organic field effect transistors
DE10212639A1 (en) * 2002-03-21 2003-10-16 Siemens Ag Device and method for laser structuring functional polymers and uses
ATE477371T1 (en) * 2002-04-22 2010-08-15 Hueck Folien Gmbh SUBSTRATES WITH ELECTRICALLY CONDUCTIVE LAYERS
DE10226370B4 (en) 2002-06-13 2008-12-11 Polyic Gmbh & Co. Kg Substrate for an electronic component, use of the substrate, methods for increasing the charge carrier mobility and organic field effect transistor (OFET)
US8044517B2 (en) 2002-07-29 2011-10-25 Polyic Gmbh & Co. Kg Electronic component comprising predominantly organic functional materials and a method for the production thereof
US20060079327A1 (en) * 2002-08-08 2006-04-13 Wolfgang Clemens Electronic device
ATE355566T1 (en) 2002-08-23 2006-03-15 Polyic Gmbh & Co Kg ORGANIC COMPONENT FOR SURGE PROTECTION AND ASSOCIATED CIRCUIT
JP4841841B2 (en) 2002-10-02 2011-12-21 レオナード クルツ シュティフトゥング ウント コンパニー カーゲー Film with organic semiconductor
WO2004042837A2 (en) * 2002-11-05 2004-05-21 Siemens Aktiengesellschaft Organic electronic component with high-resolution structuring and method for the production thereof
DE10253154A1 (en) 2002-11-14 2004-05-27 Siemens Ag Biosensor, used to identify analyte in liquid sample, has test field with detector, where detector registers field changes as electrical signals for evaluation
EP1563554B1 (en) * 2002-11-19 2012-01-04 PolyIC GmbH & Co. KG Organic electronic component comprising the same organic material for at least two functional layers
WO2004047144A2 (en) 2002-11-19 2004-06-03 Polyic Gmbh & Co.Kg Organic electronic component comprising a structured, semi-conductive functional layer and a method for producing said component
DE10256760A1 (en) * 2002-12-05 2004-06-17 Continental Isad Electronic Systems Gmbh & Co. Ohg Insulating varnish applying method for electric machine windings, involves using specific plate or block having recesses/depressions such that varnish remains in depressions until pressed by pressure plug for transfer to conductive element
GB0229191D0 (en) * 2002-12-14 2003-01-22 Plastic Logic Ltd Embossing of polymer devices
US20060125061A1 (en) * 2003-01-09 2006-06-15 Wolfgang Clemens Board or substrate for an organic electronic device and use thereof
DE10300521A1 (en) * 2003-01-09 2004-07-22 Siemens Ag Organoresistive memory
DE10302149A1 (en) 2003-01-21 2005-08-25 Siemens Ag Use of conductive carbon black / graphite blends for the production of low-cost electronics
EP1586127B1 (en) * 2003-01-21 2007-05-02 PolyIC GmbH & Co. KG Organic electronic component and method for producing organic electronic devices
KR100749126B1 (en) * 2003-01-29 2007-08-13 폴리아이씨 게엠베하 운트 코. 카게 Organic storage component and corresponding triggering circuit
DE10330064B3 (en) * 2003-07-03 2004-12-09 Siemens Ag Organic logic gate has load field effect transistor with potential-free gate electrode in series with switching field effect transistor
DE10330062A1 (en) * 2003-07-03 2005-01-27 Siemens Ag Method and device for structuring organic layers
DE10338277A1 (en) * 2003-08-20 2005-03-17 Siemens Ag Organic capacitor with voltage controlled capacity
DE10339036A1 (en) 2003-08-25 2005-03-31 Siemens Ag Organic electronic component with high-resolution structuring and manufacturing method
DE10340643B4 (en) 2003-09-03 2009-04-16 Polyic Gmbh & Co. Kg Printing method for producing a double layer for polymer electronics circuits, and thereby produced electronic component with double layer
DE10340644B4 (en) * 2003-09-03 2010-10-07 Polyic Gmbh & Co. Kg Mechanical controls for organic polymer electronics
DE10349963A1 (en) * 2003-10-24 2005-06-02 Leonhard Kurz Gmbh & Co. Kg Process for producing a film
DE102004002024A1 (en) * 2004-01-14 2005-08-11 Siemens Ag Self-aligning gate organic transistor and method of making the same
DE102004040831A1 (en) 2004-08-23 2006-03-09 Polyic Gmbh & Co. Kg Radio-tag compatible outer packaging
DE102004041497B4 (en) * 2004-08-27 2007-04-05 Polyic Gmbh & Co. Kg "Organic electronic component and method of making such a"
DE102004056492B3 (en) * 2004-11-23 2006-08-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Metal contained thermoplastic paste structured application method for thick film technologies, involves exhibiting one of temperatures by substrate, at which paste is transferred from medium to substrate and paste remains stable
DE102004059464A1 (en) 2004-12-10 2006-06-29 Polyic Gmbh & Co. Kg Electronic component with modulator
DE102004059465A1 (en) 2004-12-10 2006-06-14 Polyic Gmbh & Co. Kg recognition system
DE102004059467A1 (en) * 2004-12-10 2006-07-20 Polyic Gmbh & Co. Kg Gate made of organic field effect transistors
DE102004063435A1 (en) 2004-12-23 2006-07-27 Polyic Gmbh & Co. Kg Organic rectifier
DE102005009819A1 (en) 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg electronics assembly
DE102005009820A1 (en) * 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Electronic assembly with organic logic switching elements
DE102005017655B4 (en) 2005-04-15 2008-12-11 Polyic Gmbh & Co. Kg Multilayer composite body with electronic function
DE102005018984A1 (en) * 2005-04-22 2006-11-02 Steiner Gmbh & Co. Kg Method and device for manufacturing electronic components
DE102005031448A1 (en) 2005-07-04 2007-01-11 Polyic Gmbh & Co. Kg Activatable optical layer
DE102005035589A1 (en) 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Manufacturing electronic component on surface of substrate where component has two overlapping function layers
DE102005035590A1 (en) * 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Electronic component has flexible substrate and stack of layers including function layer on substratesurface
DE102005042166A1 (en) * 2005-09-06 2007-03-15 Polyic Gmbh & Co.Kg Organic device and such a comprehensive electrical circuit
DE102005044306A1 (en) 2005-09-16 2007-03-22 Polyic Gmbh & Co. Kg Electronic circuit and method for producing such
US20070068404A1 (en) * 2005-09-29 2007-03-29 Edwin Hirahara Systems and methods for additive deposition of materials onto a substrate
DE102005059608B4 (en) * 2005-12-12 2009-04-02 Polyic Gmbh & Co. Kg Organic electronic device with improved voltage stability and method of manufacture therefor
EP2111652A1 (en) * 2007-01-19 2009-10-28 Basf Se Method for the transfer of structural data, and device therefor
JP5365426B2 (en) * 2009-09-02 2013-12-11 株式会社島津製作所 Method for manufacturing light or radiation detector
US10475905B2 (en) * 2018-02-01 2019-11-12 International Business Machines Corporation Techniques for vertical FET gate length control

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340657A (en) * 1980-02-19 1982-07-20 Polychrome Corporation Novel radiation-sensitive articles
DE3727214A1 (en) * 1987-08-14 1989-02-23 Lohmann Therapie Syst Lts TAMPON PRINTING DEVICE FOR TRANSMITTING DEFINED QUANTITIES OF PRINTING MEDIUM PER AREA UNIT
US5364735A (en) * 1988-07-01 1994-11-15 Sony Corporation Multiple layer optical record medium with protective layers and method for producing same
JPH0445567A (en) * 1990-06-13 1992-02-14 Nec Corp Ic manufacturing method by printing
JP2587124B2 (en) * 1990-08-09 1997-03-05 株式会社ジーティシー Method of manufacturing thin film transistor circuit
JP2725591B2 (en) * 1994-03-10 1998-03-11 日本電気株式会社 Field-effect transistor
JP3246189B2 (en) * 1994-06-28 2002-01-15 株式会社日立製作所 Semiconductor display device
JPH0983040A (en) * 1995-09-12 1997-03-28 Sharp Corp Thin film transistor and fabrication thereof
US6326640B1 (en) * 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
JP3920944B2 (en) * 1996-04-22 2007-05-30 大日本印刷株式会社 Pattern forming paste and pattern forming method
US6087196A (en) * 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
GB9808061D0 (en) * 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
TW410478B (en) * 1998-05-29 2000-11-01 Lucent Technologies Inc Thin-film transistor monolithically integrated with an organic light-emitting diode
JP2000053904A (en) * 1998-08-05 2000-02-22 Matsushita Electric Ind Co Ltd Ink and offset printing using the same
US6215130B1 (en) * 1998-08-20 2001-04-10 Lucent Technologies Inc. Thin film transistors
CN102226766B (en) * 1998-08-26 2017-03-01 医药及科学传感器公司 Based on optical sensing device further
DE19851703A1 (en) * 1998-10-30 2000-05-04 Inst Halbleiterphysik Gmbh Electronic structure, e.g. FET, is produced by plotting, spraying, spin coating or spreading of insulating, semiconducting and-or conductive layers onto a substrate
US6506438B2 (en) * 1998-12-15 2003-01-14 E Ink Corporation Method for printing of transistor arrays on plastic substrates
US6114088A (en) * 1999-01-15 2000-09-05 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
GB2347013A (en) * 1999-02-16 2000-08-23 Sharp Kk Charge-transport structures
US6498114B1 (en) * 1999-04-09 2002-12-24 E Ink Corporation Method for forming a patterned semiconductor film
US6593690B1 (en) * 1999-09-03 2003-07-15 3M Innovative Properties Company Large area organic electronic devices having conducting polymer buffer layers and methods of making same
EP1149420B1 (en) * 1999-10-11 2015-03-04 Creator Technology B.V. Integrated circuit
US6621098B1 (en) * 1999-11-29 2003-09-16 The Penn State Research Foundation Thin-film transistor and methods of manufacturing and incorporating a semiconducting organic material
US6197663B1 (en) * 1999-12-07 2001-03-06 Lucent Technologies Inc. Process for fabricating integrated circuit devices having thin film transistors
US6329226B1 (en) * 2000-06-01 2001-12-11 Agere Systems Guardian Corp. Method for fabricating a thin-film transistor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0205360A1 *

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US6852583B2 (en) 2005-02-08
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WO2002005360A1 (en) 2002-01-17
US20030190767A1 (en) 2003-10-09

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