EP1269129A1 - Dispositif de detection de rayonnement thermique, procede de production et utilisation dudit dispositif - Google Patents

Dispositif de detection de rayonnement thermique, procede de production et utilisation dudit dispositif

Info

Publication number
EP1269129A1
EP1269129A1 EP01921227A EP01921227A EP1269129A1 EP 1269129 A1 EP1269129 A1 EP 1269129A1 EP 01921227 A EP01921227 A EP 01921227A EP 01921227 A EP01921227 A EP 01921227A EP 1269129 A1 EP1269129 A1 EP 1269129A1
Authority
EP
European Patent Office
Prior art keywords
focusing
detector
thermal radiation
detection window
detector element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01921227A
Other languages
German (de)
English (en)
Inventor
Rainer Bruchhaus
Dana Pitzer
Axel Schubert
Bernhard Winkler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP1269129A1 publication Critical patent/EP1269129A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0806—Focusing or collimating elements, e.g. lenses or concave mirrors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0881—Compact construction
    • G01J5/0884—Monolithic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials

Definitions

  • the invention relates to a device for the detection of W ä rmestrahlung with at least one thermal detector element for converting the thermal radiation m an electrical signal.
  • a method for producing the device and a use of the device are specified.
  • a device of the type mentioned is known for example from DE 196 45 036 AI.
  • a thermal detector element is connected to a carrier body (substrate) made of silicon.
  • the detector element is a pyroelectric detector element. It has a layer structure with two electrodes and a pyroelectric layer with pyroelectrically sensitive material arranged between the electrodes. This material is lead zirconate titanate (PZT).
  • the electrodes consist, for example, of platinum or a chromium-nickel alloy that absorbs the heat radiation.
  • the object of the invention is to show how an existing device for the detection of thermal radiation
  • Heat radiation can be better used compared to the prior art mentioned.
  • a device for the detection of thermal radiation with at least one thermal detector element for converting the thermal radiation is specified as an electrical signal.
  • the device is characterized in that there is at least one focusing element with a semiconducting material for focusing the heat radiation onto the detector element.
  • the heat radiation (infrared radiation), which can be detected with the tung Vorrich-, in particular has a long waves ⁇ on of about 1 micron.
  • the wavelength of the thermal radiation is preferably selected from a range from 5 ⁇ m to 15 ⁇ m.
  • the thermal detector element is used to convert thermal energy in the form of heat radiation into electrical energy.
  • the thermal detector element is based, for example, on the Seebeck effect or the pyroelectric effect. The prerequisite for this is absorption of the thermal radiation by a thermally sensitive material of the detector element that triggers the corresponding effect. The absorption takes place directly through the thermally sensitive material.
  • the heat radiation is absorbed by an electrode of the detector element.
  • the heat radiation it is also possible for the heat radiation to be absorbed by an absorption object in the immediate vicinity of the detector element, and for an amount of heat absorbed to be released to the thermally sensitive material by convection or heat conduction.
  • the absorbent acts as an energy transmitter.
  • the focusing element has the task of ensuring that the heat radiation is directed onto the detector element and / or the absorption object for absorption.
  • a focusing element in the form of a mirror is conceivable.
  • the focusing element is a lens.
  • the lens has a specific transmission for the thermal radiation in the direction of the detector element or the absorption object. The transmission is as high as possible. It is over 50%, but in particular over 70% to almost 100%.
  • a detection window having the focusing element for irradiating the detector element with the heat radiation.
  • the detection window ensures that the heat radiation can strike the detector element and / or the absorption object.
  • the focusing element also ensures that the heat radiation is focused.
  • the detection window advantageously has the same transmission property as the focusing element.
  • the focusing element can be integrated in the detection window. But it can also be the detection window itself.
  • the detection window and / or the focusing element has a semiconducting material which is selected from the group germanium and / or silicon. These materials have sufficient transmission for heat radiation with a wavelength of 5 ⁇ m to 15 ⁇ m.
  • the focusing element or the detection window is formed directly from the semiconducting material.
  • a support body having the detection window with the focusing element and / or a housing of the detector element having the detection window with the focusing element there is a support body having the detection window with the focusing element and / or a housing of the detector element having the detection window with the focusing element.
  • the detection window is particularly integrated in the support body.
  • the support body itself acts as a detection window.
  • the detector element is irradiated through the carrier body. Alternatively, the irradiation of the Detector element from a side facing away from the support body.
  • the support body is arranged in a housing, for example.
  • the housing has a wall with the detection window.
  • the housing is, for example ei ⁇ ne wrapping weltemchen to protect the detector element before an environmental.
  • the environmental impact is, for example, dust, air humidity or an etching chemical that would attack the detector element.
  • the functionality of the detector element could be endangered by the environmental influence.
  • the thermal detector element is a pyroelectric detector element.
  • the pyroelectric detector element consists of a pyroelectric layer with a pyroelectric sensitive material.
  • This material is, for example, a ceramic, such as lithium niobate (L ⁇ NbO_M or lead zirconate titanate.
  • a ferroelectric polymer such as polyvinylidene fluoride (PVDF) is also conceivable.
  • the pyroelectric layer with the pyroelectrically sensitive material has at least one electrode layer on two opposite sides.
  • platinum or a platinum alloy comes into question as electrode material for the electrode layer.
  • a chromium-nickel alloy or an electrically conductive oxide such as strontium ruthenate (SrRu0 3 ) is also conceivable.
  • the detector element has, for example, a rectangular base area with an edge length of
  • At least one focusing array with several focusing elements is present. It is advantageous if a detector array with several detector elements is present at the same time.
  • a focusing element or a detector element is a pixel of the focusing array or the detector array.
  • the arrays are characterized, for example, by the arrangement of their elements in columns and rows. In the case of a cellular arrangement of the elements, the elements are distributed one-dimensionally in one direction. With a column and row form There is a two-dimensional distribution.
  • the sierarray and / or the detector array at ⁇ consist game, from 20 x 20 individual elements. An arbitrary, flat distribution of the elements is also conceivable.
  • a focusing element is assigned to exactly one detector element of the detector array.
  • the heat radiation is focused by the focusing element only on one detector element.
  • an increased spatial resolution can be achieved.
  • Several focusing elements can be assigned to one detector element.
  • the focusing elements are insulated from one another with respect to the thermal radiation.
  • a layer is arranged between the individual focuser elements, which is opaque for the heat radiation, that is to say not transparent.
  • Such a layer is, for example, a highly reflective metal layer.
  • the focusing elements are separate from one another. When the heat radiation changes from one focusing element to the adjacent focusing element, there are at least two phases. There is a loss of intensity of the heat radiation passing from one focusing element to the other and thus an increased spatial resolution of the detection of the heat radiation.
  • a method for producing a device for the detection of thermal radiation is specified for solving the task, which method was described above.
  • at least one focusing element with the semiconducting material is generated in a detection window having a semiconducting material for irradiating the detector element with the thermal radiation.
  • a semi-conductive material is used, the germanium or Sili ⁇ zium is selected from the group and /.
  • diverse structuring possibilities or possibilities for integrating an electrical circuit are known from micromechanics.
  • a read-out device for reading out, processing and or forwarding the electrical signal generated by the detector element can be integrated in the carrier body.
  • the readout device is produced, for example, by a method known from CMOS technology (Complementary Metalloxyde Semiconductors).
  • the method for producing the focusing element comprises in particular the following method steps:
  • Detection window arises, c) reshaping the lacquer cylinder with the photoresist into a spherical cap with the photoresist, and d) etching the photoresist and the semiconducting material, the focusing element being formed by etching a shape of the spherical cap into the detection window.
  • the lacquer layer is applied, for example, by spraying or electrophoretic deposition of the photoresist on the surface of the detection window.
  • a lacquer layer with a layer thickness is used, which is selected from the range from 2 ⁇ m to 100 ⁇ m inclusive.
  • the photolithographic structuring takes place, for example, by exposure with the aid of a template or by exposure with a convergent light beam (for example laser beam).
  • the coating cylinder has for example, a square base. In particular, the base of the coating cylinder is round.
  • the coating cylinder is reshaped with the photoresist, for example, by the coating cylinder flowing away.
  • the photoresist is heated and brought into a flowable state.
  • a spherical cap with the photoresist is created.
  • the spherical cap is a partial sphere, i.e. an incomplete sphere.
  • a diameter of the spherical cap is selected, for example, from the range from 0.1 mm up to and including 2 mm.
  • the diameter of the spherical cap is advantageously adapted to the assigned detector element. This ensures that the amount of heat radiation that is focused on the detector element can also be absorbed by the detector element. This amount of heat radiation depends, for example, on the base area of the detector element.
  • Both photoresist and semiconducting material are removed during etching.
  • the shape of the spherical cap is mapped in the detection window.
  • the result is a focusing element with a diameter of also 0.2 to 2 mm.
  • a height of the focus element in the form of the lens produced in this way is, for example, 20 ⁇ m.
  • the actual size of the lenses depends, for example, on a focus position required for focusing.
  • the etching is in particular isotropic. But it can also be anisotropic.
  • the use of the device described above for the detection of thermal radiation is specified, the thermal radiation striking the focusing element, transmitted by the focusing element and focused on the detector element and converted into an electrical signal in the detector element.
  • the detector element can be irradiated by the support body or from a side pointing away from the support body.
  • the support body thus only functions as support body or as support body with detection window and focusing element. If the device has a detector array, the detection of the thermal radiation can take place in a spatially resolved manner.
  • a location resolution is advantageous, for example, for a presence sensor, with the aid of which the presence of a person, for example in a room, is to be determined.
  • the focusing element can be easily and inexpensively in
  • Detection window of the device for the detection of thermal radiation can be integrated.
  • the integration of the focusing element in the support body is particularly advantageous. This enables a compact structure of the device.
  • Figure 1 shows a cross section of a ⁇ device for the detection of thermal radiation with a detector element
  • FIG. 2 shows a cross section of a device for the detection of thermal radiation with a focusing array and a detector array.
  • FIG. 3 shows a cross section of a device for the detection of thermal radiation with a focusing array and a detector array.
  • FIG. 4 shows a method for producing a device for the detection of thermal radiation.
  • the device 1 for the detection of thermal radiation 3 has a detector array 9 comprising five pyroelectric detector elements 2 arranged in a cell.
  • a detector element 2 consists of a pyroelectric layer 15 made of lead zirconate titanate (FIG. 1).
  • An electrode 16 and 17 is attached to the opposite sides of this layer 15.
  • the electrodes 16 and 17 are made of platinum.
  • the detector element has a rectangular base with an edge length of 50 ⁇ m.
  • the detector element 2 is arranged on a support body 5 made of the semiconducting material silicon 6.
  • An electrical and thermal insulation layer 8 is present between the support body 5 and the detector element 2.
  • the insulation layer 8 has a layer-like
  • a cavity 18 is present in the insulation layer 8 adjacent to the support body 5.
  • the cavity 18 is evacuated and extends beyond the base area of the detector element 2.
  • the insulation layer 8 has a support layer 19 made of polysilicon for supporting the cavity 18.
  • the support layer 19 is made of silicon nitride.
  • a layer 20 of silicon oxide forms the end of the insulation layer 8 or the covering of the cavity 18 and the support layer 19.
  • a readout device 21 is also present.
  • the reading device 21 amplifies the electrical signal 4 of the detector element 2.
  • the amplified signal is passed on by the reading device 21.
  • a focusing array 13 with five focusing elements 12 is arranged (FIG. 2).
  • Each of the focusing elements 12 is a lens, which consists of silicon 6.
  • the focusing elements 12 are part of the carrier body 5.
  • the radiation of the detector elements 2 by the thermal radiation 3 takes place from the side of the carrier body 5.
  • the support body 5 itself is the detection window 7 with the focusing element 12.
  • a focusing element 12 is assigned to each detector element 2. In each case, a specific section of the heat radiation 3 is focused on one detector element 2 with the aid of the focusing element 12.
  • the heat radiation 3 strikes the focusing element 12, is transmitted there and focused on the assigned detector element 2, and an electrical signal 4 m is converted in the detector element 2 m.
  • a housing 10 which surrounds the detector array 9 (FIG. 3).
  • the housing has a wall that functions as a detection window 7.
  • the detection window 7 is arranged opposite the detector array 9.
  • the focusing array 13 is integrated in the detection window 7.
  • the focusing array 13 and the detection window 7 consist of silicon 6.
  • a 20 ⁇ m thick lacquer layer 23 made of photoresist is applied by spraying onto a surface 22 of a 1 mm thick silicon plate, which serves as a detection window 7 (FIG. 4, method step 41).
  • This lacquer layer 23 is structured photolithographically (method step 42).
  • lacquer cylinders 24 are produced with a round base.
  • the paint cylinder 24 m spherical caps 25 is reshaped (method step 43).
  • the photoresist of the spherical caps and the silicon is then etched isotropically (method step 44).
  • the shape of the spherical caps is formed in the detection window 7 made of silicon. From each of the spherical calotte a lens 12 is formed.
  • Each spherical cap is characterized by a diameter of approximately 200 ⁇ m and a height of 20 ⁇ m.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)

Abstract

La présente invention concerne un dispositif de détection de rayonnement thermique (3), qui comprend au moins un élément de détection thermique (2) permettant de transformer ledit rayonnement thermique en un signal électrique (4). Ce dispositif comprend au moins un élément de focalisation (12), qui focalise ledit rayonnement thermique sur ledit élément de détection. Cet élément de focalisation est, par exemple, une lentille constituée d'un matériau semi-conducteur, tel que le silicium. Ledit élément de focalisation est de préférence intégré dans une fenêtre de détection du rayonnement thermique, qui est constituée dudit matériau semi-conducteur.
EP01921227A 2000-03-29 2001-03-21 Dispositif de detection de rayonnement thermique, procede de production et utilisation dudit dispositif Withdrawn EP1269129A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10015687 2000-03-29
DE10015687 2000-03-29
PCT/DE2001/001083 WO2001073386A1 (fr) 2000-03-29 2001-03-21 Dispositif de detection de rayonnement thermique, procede de production et utilisation dudit dispositif

Publications (1)

Publication Number Publication Date
EP1269129A1 true EP1269129A1 (fr) 2003-01-02

Family

ID=7636882

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01921227A Withdrawn EP1269129A1 (fr) 2000-03-29 2001-03-21 Dispositif de detection de rayonnement thermique, procede de production et utilisation dudit dispositif

Country Status (4)

Country Link
US (1) US20030164450A1 (fr)
EP (1) EP1269129A1 (fr)
JP (1) JP2003529068A (fr)
WO (1) WO2001073386A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1588136A4 (fr) * 2003-01-31 2006-03-22 Mikron Infrared Inc Formerly K Appareil de thermographie
KR100538996B1 (ko) * 2003-06-19 2005-12-27 한국전자통신연구원 적외선 흡수층으로 실리콘 산화막을 사용한 적외선 센서및 그 제조 방법
US7193202B2 (en) * 2004-09-23 2007-03-20 Vrije Universiteit Brussel Photovoltage detector
JP2007121194A (ja) * 2005-10-31 2007-05-17 Nec Corp 光検出素子
US7902517B1 (en) 2008-06-18 2011-03-08 The United States Of America As Represented By The United States Department Of Energy Semiconductor neutron detector
DE102013114202A1 (de) * 2013-12-17 2015-06-18 Endress + Hauser Wetzer Gmbh + Co. Kg PYROMETER und Verfahren zur Temperaturmessung

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US5401968A (en) * 1989-12-29 1995-03-28 Honeywell Inc. Binary optical microlens detector array
GB2248964A (en) * 1990-10-17 1992-04-22 Philips Electronic Associated Plural-wavelength infrared detector devices
KR0141447B1 (ko) * 1993-09-22 1998-07-01 모리시타 요이찌 초전형 적외선센서
US5677200A (en) * 1995-05-12 1997-10-14 Lg Semicond Co., Ltd. Color charge-coupled device and method of manufacturing the same
US5701008A (en) * 1996-11-29 1997-12-23 He Holdings, Inc. Integrated infrared microlens and gas molecule getter grating in a vacuum package
US5853960A (en) * 1998-03-18 1998-12-29 Trw Inc. Method for producing a micro optical semiconductor lens
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Also Published As

Publication number Publication date
WO2001073386A1 (fr) 2001-10-04
US20030164450A1 (en) 2003-09-04
JP2003529068A (ja) 2003-09-30

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