EP1252652A1 - Procede de surveillance d'un processus de fabrication - Google Patents

Procede de surveillance d'un processus de fabrication

Info

Publication number
EP1252652A1
EP1252652A1 EP00904853A EP00904853A EP1252652A1 EP 1252652 A1 EP1252652 A1 EP 1252652A1 EP 00904853 A EP00904853 A EP 00904853A EP 00904853 A EP00904853 A EP 00904853A EP 1252652 A1 EP1252652 A1 EP 1252652A1
Authority
EP
European Patent Office
Prior art keywords
linear combination
matrix
parameter
determined
function
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00904853A
Other languages
German (de)
English (en)
Inventor
Ferdinand Bell
Dirk Knobloch
Jan Zimpel
Knut VOIGTLÄNDER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Infineon Technologies AG
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV, Infineon Technologies AG filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of EP1252652A1 publication Critical patent/EP1252652A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Definitions

  • the present invention relates to a method for monitoring a manufacturing process.
  • the present invention relates in particular to a method for monitoring a production process for processing a semiconductor substrate in semiconductor production.
  • Modern industrial production is generally characterized by a high degree of automation.
  • a high degree of automation is essential in order to be internationally competitive.
  • a large number of manufacturing processes and machining processes are used in the production and processing of semiconductor substrates to form integrated semiconductor circuits.
  • Deposition processes for producing material layers and etching processes for structuring these layers may be mentioned here as examples.
  • These manufacturing processes must always be monitored because, due to their complexity, unnoticed faults or poorly adapted process conditions can lead to incorrectly manufactured semiconductor circuits.
  • there is generally a desire to characterize the manufacturing process by analyzing certain measured variables determined during the manufacturing process in order to be able to intervene in a regulatory manner if necessary.
  • the etching time is a decisive parameter in order to achieve a high quality result. If the etching time is too short, the layer to be etched is only incompletely removed. If the etching is too long, for example, active areas are etched, or structures are under-etched. Both conditions must be avoided by suitable methods of detecting the correct end time.
  • a possible method for detecting the correct end time is known, for example, from US Pat. No. 5,877,032. It describes a method for determining the end point of a plasma etching process, in which the optical emission of the plasma is used to determine the end point.
  • the background of this method is the fact that during the etching process, a layer located on a substrate is etched through, thereby exposing the underlying substrate or the underlying layer.
  • the interaction of the etching gas with the exposed substrate or the exposed layer can be detected spectroscopically as a change in the emission spectrum of the plasma. According to US Pat. No. 5,877,032, this change is compared with a large number of predetermined reference curves and the comparison is used to infer the end point of the plasma etching process.
  • a method for determining the end point of a plasma etching process is also known from US Pat. No. 5,739,051.
  • the optical emission of the plasma is also used to determine the end point, emission lines which are characteristic of the interaction of the etching gas with the exposed substrate being used for the evaluation.
  • optical filters are used in industrial systems, depending on the chemical reactions taking place in the plasma, in order to be able to follow the temporal course of the intensities in predetermined wavelength ranges. This procedure is not practicable, especially in chambers where changing products with different chemical compositions are run. Detection of the end point in different optical areas requires JLM to H
  • ⁇ PJ rr a ⁇ rr H- 0 O * »rr CO 0- H- 0- J ⁇ OHHO ⁇ rr d CO PJ H- ⁇ t- 1 O ⁇ rr d ⁇ • ri - rr a ⁇ £> ⁇ . ⁇ 3 • Ü PH. c HO a PJ 3 CD ⁇ H H- "
  • a method for monitoring a manufacturing process which has the following steps:
  • At least one linear combination is formed from the multiplicity of measured variables, the weights of the linear combination being selected such that a predetermined curve shape is approximated, LO J to t P 1 P 1
  • Emission spectra generally contain very detailed information about the process on which the radiation emission is based, for example a chemical reaction.
  • very large amounts of data are obtained, from which the decisive information can only be extracted with great difficulty using conventional methods.
  • emission spectra can be used with the method according to the invention for online monitoring of manufacturing or processing processes. It is particularly preferred if the intensities of different wavelengths are used in a spectral range between 200 and 950 nm.
  • the emission spectrum of a plasma process is used.
  • Plasma etching processes for structuring material layers play an important role in semiconductor production. The dimensions of the structures produced depend crucially on the quality of the etching process used.
  • the emission spectrum of the plasma contains a lot of information that is necessary to control the plasma process.
  • Highly developed sensor systems such as the so-called “Optical Emission Spectroscopy (OES)” or the so-called “Residual Gas Analysis (RGA)” can be used to record the spectra. It is particularly preferred if the end time of the plasma process is determined as the parameter.
  • a step-like function is used as the predetermined curve shape.
  • Step-like functions such as a tangent hyperbolic function, can be used with corresponding evaluation algorithms. gorithms can be examined relatively easily to determine whether the step has already been completed or not, ie whether the value of the function has already jumped from a low value to a higher value. Accordingly, if the parameter to be determined is linked to the occurrence of the stage, the parameter can be determined relatively easily automatically. It is particularly preferred if the step-like function has at least one free parameter for adaptation to the parameter to be determined.
  • the measured variables are arranged in a matrix at the specified times and a main component analysis (“principal component analysis”) is carried out on the basis of this matrix
  • Principal component analysis is a method of expressing a matrix A by means of its principal vectors or principal components.
  • a number of methods can be used to calculate the main components. For example, the singular value decomposition (SVD) of matrix A can be calculated.
  • the eigenvalues and eigenvectors of the correlation matrix (A T A) of matrix A can also be calculated. laying a matrix such as the so-called "(nonlinear) partial least squares" of a matrix A can be used.
  • the main component analysis is preferably carried out with the aid of a singular value decomposition, so that the matrix A mn is decomposed into two orthogonal matrices U TM * " 'and V nxn and a diagonally populated matrix ⁇ with the singular values ⁇ x , where:
  • the so-called "left" eigenvectors u ⁇ form the matrix O mxm while the so-called “right” eigenvectors v form the matrix V nxn .
  • the singular values ⁇ x are ordered in size and represent the share that the associated dyadic product ⁇ v "1 ⁇ has in the formation of the total matrix A.
  • the dyadic products UiV ⁇ which have only small singular values ⁇ x , have in the As a rule, no information about the monitored process, and accordingly, matrices of measured variables that are actually measured are generally sufficiently well represented by the dyadic products U ⁇ V T j. With the 3 to 15 largest singular values ⁇ x .
  • a functional is minimized or maximized on the basis of the predetermined curve shape and the linear combination in order to determine the weights of the linear combination. It is particularly preferred if, by minimizing (or maximizing) the
  • Functiona is the main main components of the measurement matrix are determined. By minimizing (or maximizing) the function, those main components can be easily determined that must be taken into account in order to approximate the specified curve shape with sufficient accuracy. It is further preferred if the free parameter of the step-like function is determined by minimizing the function. In this way, an optimal signal curve for the measured variable to be determined can be determined in a self-consistent manner.
  • the linear combination is smoothed to determine the parameter.
  • the measured variables have a noise component, which can also be found in a linear combination of the measured variables. So that no misjudgment is made due to the noise, it is preferred to suppress the noise component by smoothing the linear combination to such an extent that the parameter can be determined correctly. It is particularly preferred if the smoothing of the linear combination is achieved by using a zero phase filter.
  • qualitative criteria such as the occurrence of a local maximum or the occurrence of a turning point, can be used to determine the parameter.
  • Qualitative criteria have the advantage over quantitative criteria, such as exceeding certain threshold values, that they depend to a lesser extent on the respective absolute size of the measured values and can therefore be used more robustly over a larger range of values.
  • the measured variables of a plurality of trial runs and / or production runs are used to determine the weights of the linear combination.
  • the measured variables of a plurality of trial runs and / or production runs are arranged in a matrix (block matrix) and a main component analysis is carried out on the basis of this matrix.
  • FIG. 1 shows a schematic representation of a device for carrying out a first embodiment of the method according to the invention
  • 3A-3C show the corresponding first three right eigenvectors of a spectrum matrix
  • 4 shows a graph of the achievable model quality as a function of the end time t E p and the number of main components taken into account
  • Fig. 10 shows the course of the corresponding conventional
  • FIG. 12 shows the time derivative of the linear combinations y (t) shown in FIG. 9 after filtering
  • FIG. 1 shows a schematic representation of a device for carrying out a first embodiment of the method according to the invention.
  • the essential components of this device are a reaction chamber 1, in which, for example, a plasma etching process (e.g. RIE) can be carried out.
  • the etching gas is fed into the reaction chamber 1 via an inlet 2, where it is ionized and converted into a plasma.
  • the plasma 9 is generated and maintained by a capacitively applied RF voltage, which is provided by an RF source 3.
  • the reaction products of the etching are removed from the reaction chamber 1 through an outlet 4.
  • An etching gas mixture of CF 4 , CHF 3 and argon is used as the etching gas, the plasma being improved in its homogeneity by a magnetic field (not shown) of approximately 60 gaus.
  • the power used to generate and maintain the plasma is approximately 1200 watts.
  • the pressure in the reaction chamber 1 is about 150 mtorr.
  • the plasma is used to etch contact holes in a silicon dioxide layer which is arranged on a silicon wafer 5.
  • the silicon wafer 5 is placed on a holder 6 in the reaction chamber 1.
  • the contact holes which are generally used to connect the diffusion areas (active areas) of the transistors, have a very small opening ratio.
  • the requirements for recognizing the correct end time of the etching at which the contact holes reach the silicon substrate are correspondingly high. If the etching time is too short, the contact holes are not opened completely and the transistors are not connected. If the etching time is too long, the active areas of the transistors are strongly etched. Both can lead to total failure of the integrated circuit. O LO) t HP 1
  • FIGS. 2A-2C show representations of the first three left eigenvectors u 0 ! the matrix ⁇ 0 ( ⁇ , t), ie the left eigenvectors u ° 1 with the three largest singular values ⁇ ° !
  • FIGS. 3A-3C show representations of the corresponding first three right eigenvectors v C ! the matrix ⁇ 0 ( ⁇ , t).
  • the columns u ° ! of the matrix U 0 can be interpreted as a basic wavelength pattern, while the columns v ° x of the matrix V 0 can be interpreted as a basic time signal.
  • y 0 (t) ⁇ , ⁇ 0 ( ⁇ , t) ⁇ u ⁇ c,.
  • the function y 0 (t) is a function of the time t, which is calculated using the coefficients Cj. can be adapted to a given curve shape.
  • the predetermined curve shape is selected so that the important parameter, in this case the end time of the etching, can be extracted relatively easily from the linear combination.
  • a typical example of such a curve shape is a tangent hyperbolic function:
  • the parameter ⁇ is a measure of the desired slope with which the function y M0 (t) jumps from its initial value ( «0) to its final value ( ⁇ 1).
  • this parameter is specified externally and is not a variable in the optimization that follows.
  • the parameter t EP specifies the point in time at which the function y M0 (t) jumps from its initial value ( «0) to its final value ( ⁇ 1).
  • This parameter t EP is not specified from the outside, but is determined in the optimization that follows, so that the end time obtained from the test run and the parameter t EP match as closely as possible. In this exemplary embodiment, this is achieved by minimizing the quality function Q. The following applies:
  • N ⁇ t (yMo (t, t EP ) - ⁇ t - y M0 (t ', t EP )) 2 .
  • ⁇ t (or ⁇ t -) stands for a sum of the respective function values at the specified times.
  • FIG. 4 shows a graph of the achievable model quality as a function of the end time t EP and the number of main components taken into account.
  • the optimal choice for the parameter t EP (the point at which the steepest end point signal can be generated) is found by a one-dimensional numerical optimization. It is expedient to use a superordinate grid search and then a local gradient-oriented optimization to find the optimal t E p opt (n) depending on the number of main components taken into account. In this way, disturbances caused by local minima can be avoided.
  • FIG. 5 shows a graph of the achievable model quality Q opt with optimal coefficients c op ! and t EP ⁇ pt depending on the number of main components considered.
  • the only parameter still to be determined - the number of main components to be taken into account - can finally be determined. 5 that an adequate model quality has already been achieved with 4 selected main components.
  • the trial etching is thus evaluated and the weights of the linear combination from the measured variables are defined.
  • An “end point pattern” u EP can now be formed from the selected main components on the right and the optimal coefficients c opc 1 :
  • FIG. 6 shows a representation of the end point pattern u EP .
  • the components U EP 3 of the end point pattern U EP are the weights sought for the linear combination of the intensities of the measured wavelengths of the emission spectrum.
  • a chemical interpretation can be assigned to the end point pattern u EP .
  • CN and H lines can be clearly seen in FIG. 6.
  • the emission spectrum of the plasma etching is measured continuously, as described with reference to FIG. 1.
  • a linear combination y (t) is now formed from the measured variables with the aid of the weights EP 3 . This can be done, for example, by creating a matrix ⁇ ( ⁇ , t) from the measured values and multiplying the end point pattern U EP by the transpose of this matrix ⁇ ( ⁇ , t) after each measurement time:
  • y (t) ⁇ ( ⁇ , t) ⁇ u EP .
  • FIG. 7 shows a representation of the linear combination y (t) for improved determination of the end time of a plasma etching. It can clearly be seen that the linear combination y (t) essentially has a step-like shape, which provides a much sharper signal that is more suitable for recognizing the correct end time. As a comparison, the corresponding conventional end point signal is shown in FIG. With this conventional end point signal, the correct end time must be determined by the location of the small local len maximum in the middle of the signal (about 80 seconds). Accordingly, the determination of the end time with the conventional methods is uncertain.
  • An evaluation of the linear combination y (t) shown in FIG. 7 now provides the desired end time of the plasma etching.
  • One way to evaluate the linear combination y (t) is to specify a threshold value (e.g. 0.6). If the linear combination y (t) exceeds the threshold value, the etching process can be ended either immediately or after a certain, predetermined post-etching time has elapsed.
  • threshold value is very easy to implement and provides satisfactory results for many processes. Unfortunately, this procedure for determining the parameter usually depends on the absolute sizes of the measured values. In the present example, reaching the threshold value depends, for example, on the total intensity of the measured radiation. However, the total intensity of the measured radiation is not known a priori, so that the correct end time cannot be determined exactly by specifying a threshold value.
  • the inflection point of the linear combination y (t), ie the maximum of the first derivative of the linear combination y (t) according to time, is used in the following to precisely determine the end time.
  • this turning point is essentially independent of the total intensity of the measured signal.
  • FIG. 11 shows the time derivative of the linear combinations y (t) shown in FIG. 9.
  • the first derivative of the linear combinations y (t) is also very noisy, so that the maximum of the first derivative cannot be determined in a simple manner.
  • the linear combinations y (t) are first filtered before the first time derivative is formed.
  • the filtering suppresses the noise component and the actual signal is more pronounced.
  • 12 shows the first derivative of the filtered linear combinations y (t). So that the maximum does not shift during filtering, the filtering is carried out with a so-called zero phase filter.
  • a number of methods or filters can be used to filter the linear combination y (t).
  • the time-discrete variant (duty cycle T a ) of a 1st order Butterworth filter (filter time T F ) was used.
  • This filter has the following transfer function G:
  • a filter time constant T F of 10s with a duty cycle T a of 2s was chosen.
  • the specific filtering is carried out by first applying the filter G to the signal y (t) to be filtered.
  • the intermediate signal y * thus generated is now used to compensate for the phase shift generated in the first filtering by means of a zero and pole mirroring from the filter G O LO to to P 1
  • the correct weights (coefficients) for the linear combination of the measured variables can be useful to include the results of several test runs or production runs in the determination of the weights (coefficients) for the linear combination.
  • the measured spectral matrices of several etchings e.g. at the beginning, in the middle and at the end of a so-called "wet clean cycle" of the reaction chamber
  • the measured spectral matrices of several etchings e.g. at the beginning, in the middle and at the end of a so-called "wet clean cycle" of the reaction chamber
  • the measurement variable matrices of the individual processes into a single, large block matrix.
  • the matrix U in turn contains the linearly independent spectral basic patterns Ui.
  • n different parameters t ⁇ p 3 but only one set of optimal coefficients c opt ! , from which an end point pattern u EP can be formed:
  • the weights U E P 3 thus obtained now contain the information from several etchings, so that methods can be used in a stable manner, for example, over a longer period of time.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

La présente invention concerne un procédé de surveillance de processus de fabrication, qui, par combinaison linéaire de grandeurs de mesures avec des facteurs de pondération judicieusement sélectionnés, permet de produire un signal (optimal) permettant de déterminer la grandeur caractéristique correspondante. Cela permet de simplifier significativement l'extraction de la grandeur caractéristique à partir des grandeurs de mesure et, dans de nombreux cas, de rendre possible ladite extraction. Le procédé de l'invention permet en fait de traiter de grandes quantités de données de sorte que les informations importantes (grandeurs caractéristiques) peuvent être acquises pratiquement en temps réel ou en temps réel à partir des données.
EP00904853A 2000-01-25 2000-01-25 Procede de surveillance d'un processus de fabrication Withdrawn EP1252652A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/DE2000/000249 WO2001056072A1 (fr) 2000-01-25 2000-01-25 Procede de surveillance d'un processus de fabrication

Publications (1)

Publication Number Publication Date
EP1252652A1 true EP1252652A1 (fr) 2002-10-30

Family

ID=5647408

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00904853A Withdrawn EP1252652A1 (fr) 2000-01-25 2000-01-25 Procede de surveillance d'un processus de fabrication

Country Status (3)

Country Link
US (1) US7479395B2 (fr)
EP (1) EP1252652A1 (fr)
WO (1) WO2001056072A1 (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7054786B2 (en) * 2000-07-04 2006-05-30 Tokyo Electron Limited Operation monitoring method for treatment apparatus
DE10208044B8 (de) * 2002-02-25 2009-01-22 Infineon Technologies Ag Verfahren und Anordnung zum Überwachen eines Herstellungsprozesses
US8676538B2 (en) * 2004-11-02 2014-03-18 Advanced Micro Devices, Inc. Adjusting weighting of a parameter relating to fault detection based on a detected fault
FI20041690A0 (fi) * 2004-12-30 2004-12-30 Kone Corp Hissijärjestelmä
FI117091B (fi) * 2005-03-15 2006-06-15 Kone Corp Menetelmä kuljetusjärjestelmän hallitsemiseksi
US9075157B2 (en) * 2012-02-24 2015-07-07 Baker Hughes Incorporated Bending correction for deep reading azimuthal propagation resistivity
US10386828B2 (en) 2015-12-17 2019-08-20 Lam Research Corporation Methods and apparatuses for etch profile matching by surface kinetic model optimization
US9792393B2 (en) 2016-02-08 2017-10-17 Lam Research Corporation Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization
US10032681B2 (en) 2016-03-02 2018-07-24 Lam Research Corporation Etch metric sensitivity for endpoint detection
US10197908B2 (en) 2016-06-21 2019-02-05 Lam Research Corporation Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework
US10254641B2 (en) 2016-12-01 2019-04-09 Lam Research Corporation Layout pattern proximity correction through fast edge placement error prediction
US10534257B2 (en) 2017-05-01 2020-01-14 Lam Research Corporation Layout pattern proximity correction through edge placement error prediction
DE102017213147A1 (de) * 2017-07-31 2019-01-31 Bayerische Motoren Werke Aktiengesellschaft Verfahren zur Überprüfung von Steckverbindungen
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
US11624981B2 (en) 2018-04-10 2023-04-11 Lam Research Corporation Resist and etch modeling
WO2019200015A1 (fr) 2018-04-10 2019-10-17 Lam Research Corporation Métrologie optique dans l'apprentissage machine pour caractériser des caractéristiques
US11153960B1 (en) * 2018-06-08 2021-10-19 Innoveering, LLC Plasma-based electro-optical sensing and methods
US10977405B2 (en) 2019-01-29 2021-04-13 Lam Research Corporation Fill process optimization using feature scale modeling
DE202021103238U1 (de) * 2021-06-16 2021-06-22 TRUMPF Hüttinger GmbH + Co. KG Signalverarbeitungssystem und Leistungsversorgungseinrichtung mit einem Signalverarbeitungssystem

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722151B2 (ja) * 1984-05-23 1995-03-08 株式会社日立製作所 エツチングモニタ−方法
US5877032A (en) * 1995-10-12 1999-03-02 Lucent Technologies Inc. Process for device fabrication in which the plasma etch is controlled by monitoring optical emission
SG70554A1 (en) * 1992-12-14 2000-02-22 At & T Corp Active neural network control of wafer attributes in a plasma etch process
TW260857B (fr) * 1993-03-04 1995-10-21 Tokyo Electron Co Ltd
US5728253A (en) * 1993-03-04 1998-03-17 Tokyo Electron Limited Method and devices for detecting the end point of plasma process
US5737496A (en) * 1993-11-17 1998-04-07 Lucent Technologies Inc. Active neural network control of wafer attributes in a plasma etch process
US5864773A (en) * 1995-11-03 1999-01-26 Texas Instruments Incorporated Virtual sensor based monitoring and fault detection/classification system and method for semiconductor processing equipment
US5658423A (en) * 1995-11-27 1997-08-19 International Business Machines Corporation Monitoring and controlling plasma processes via optical emission using principal component analysis
US6351683B1 (en) * 1997-09-17 2002-02-26 Tokyo Electron Limited System and method for monitoring and controlling gas plasma processes
US6153115A (en) * 1997-10-23 2000-11-28 Massachusetts Institute Of Technology Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra
US6381008B1 (en) * 1998-06-20 2002-04-30 Sd Acquisition Inc. Method and system for identifying etch end points in semiconductor circuit fabrication
JP4051470B2 (ja) * 1999-05-18 2008-02-27 東京エレクトロン株式会社 終点検出方法
US6420194B1 (en) * 1999-10-12 2002-07-16 Lucent Technologies Inc. Method for extracting process determinant conditions from a plurality of process signals

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0156072A1 *

Also Published As

Publication number Publication date
US7479395B2 (en) 2009-01-20
US20030008507A1 (en) 2003-01-09
WO2001056072A1 (fr) 2001-08-02

Similar Documents

Publication Publication Date Title
EP1252652A1 (fr) Procede de surveillance d'un processus de fabrication
DE60104705T2 (de) Verbesserte regelung mit adaptives abtastverfahren zur halbleiterherstellung
DE60111411T2 (de) Verfahren und gerät zur integrierten prozesssteuerungsstruktur in werkzeugsystemen
DE112005002576T5 (de) Fehlererkennungssystem und Verfahren auf der Grundlage einer gewichteten Hauptkomponentenanalyse
DE10212909B4 (de) VERFAHREN UND GERÄT ZUM BEWERTEN EINES PROZESSES UND VERFAHREN UND GERÄT ZUM IDENTIFIZIEREN VON ZUMINDEST EINER NEUEN STÖRGRÖ-ßENVARIABLEN IN EINEM PROZESSREGELKREIS
DE60316517T2 (de) Verfahren und Vorrichtung zur Aufnahme von Störsignalen
DE10393394B4 (de) Intelligentes integriertes Lithographiesteuerungssystem auf der Grundlage des Produktaufbaus und Ausbeuterückkopplungssystem und Verfahren zu dessen Anwendung
DE102009006887B3 (de) Verfahren und System zur Halbleiterprozesssteuerung und Überwachung unter Anwendung eines Datenqualitätsmaßes
DE112006002918B4 (de) Verfahren, System sowie computerlesbare Programmspeichereinrichtung für eine produktbezogene Rückkopplung für Prozesssteuerung
DE102004024603B4 (de) Verfahren zum Herstellen einer Halbleitereinrichtung mit Oxidfilmschichten verschiedener Stärken
DE10393903T5 (de) Dynamische adaptive Abtastrate für Modellvorhersage
DE10341764A1 (de) Integrierte Modell-Vorhersagesteuerung und -Optimierung innerhalb eines Prozesssteuerungssystems
DE112004001259B4 (de) Verfahren und System zum Ausführen einer Messverteilung auf der Grundlage einer Fehlererkennung und computerlesbares Speichermedium
DE3023591A1 (de) Verfahren und vorrichtung zur steuerung eines aetzvorganges
DE102008021558A1 (de) Verfahren und System für die Halbleiterprozesssteuerung und Überwachung unter Verwendung von PCA-Modellen mit reduzierter Grösse
DE102006004411A1 (de) Verfahren und System für die Messdatenbewertung in der Halbleiterbearbeitung durch auf Korrelation basierende Datenfilterung
DE60219376T2 (de) System zur adaptiven Plasma-Charakterisierung
DE102005046972A1 (de) Verfahren und System für eine fortschrittliche Prozesssteuerung unter Anwendung einer Kombination aus gewichteten relativen Voreinstellungswerten
DE102008029498B4 (de) Verfahren und System zur quantitativen produktionslinieninternen Materialcharakterisierung in Halbleiterherstellung auf der Grundlage von Strukturmessungen und zugehörigen Modellen
DE4130391C2 (de) Verfahren zum selektiven entfernen einer schicht und dessen verwendung
DE102005030586A1 (de) Verfahren und System für eine fortschrittliche Prozesssteuerung unter Anwendung der Messunsicherheit als Steuerungseingang
DE10355573A1 (de) Verfahren und System zum Erhöhen der Produktionsausbeute durch Steuern der Lithographie auf der Grundlage elektrischer Geschwindigkeitsdaten
DE69912072T2 (de) Verfahren zur schnellen automatischen spektralen anpassung
EP1038163A2 (fr) Procede de controle d'installations de traitement
DE102005009071B4 (de) Verfahren zur Prozesssteuerung

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20020716

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

RIN1 Information on inventor provided before grant (corrected)

Inventor name: ZIMPEL, JAN

Inventor name: VOIGTLAENDER, KNUT

Inventor name: KNOBLOCH, DIRK

Inventor name: BELL, FERDINAND

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: INFINEON TECHNOLOGIES AG

Owner name: FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DERANGEWAND

REG Reference to a national code

Ref country code: DE

Ref legal event code: 8566

17Q First examination report despatched

Effective date: 20040129

RBV Designated contracting states (corrected)

Designated state(s): FR IT

APBN Date of receipt of notice of appeal recorded

Free format text: ORIGINAL CODE: EPIDOSNNOA2E

APAF Appeal reference modified

Free format text: ORIGINAL CODE: EPIDOSCREFNE

APBT Appeal procedure closed

Free format text: ORIGINAL CODE: EPIDOSNNOA9E

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWAN

Owner name: INFINEON TECHNOLOGIES AG

18D Application deemed to be withdrawn

Effective date: 20060801