EP1196955A1 - Dispositifs electroluminescents polymeres a longue duree de vie presentant un rendement lumineux et une luminance energetique ameliores - Google Patents

Dispositifs electroluminescents polymeres a longue duree de vie presentant un rendement lumineux et une luminance energetique ameliores

Info

Publication number
EP1196955A1
EP1196955A1 EP00947472A EP00947472A EP1196955A1 EP 1196955 A1 EP1196955 A1 EP 1196955A1 EP 00947472 A EP00947472 A EP 00947472A EP 00947472 A EP00947472 A EP 00947472A EP 1196955 A1 EP1196955 A1 EP 1196955A1
Authority
EP
European Patent Office
Prior art keywords
layer
semi
cathode
work function
reflectivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00947472A
Other languages
German (de)
English (en)
Inventor
Marie B. O'regan
Chi Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Displays Inc
Original Assignee
Uniax Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uniax Corp filed Critical Uniax Corp
Publication of EP1196955A1 publication Critical patent/EP1196955A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair

Definitions

  • This invention relates to organic polymer light-emitting diodes with improved luminous efficiency and improved radiance.
  • Diodes and particularly light emitting diodes (LEDs) fabricated with conjugated organic polymer layers have attracted attention due to their potential for use in display technology.
  • a standard polymer LED architecture includes the following layers in contact sequence: a substrate with a coating of indium-tin oxide ( ITO), a passivation layer, emissive polymer, followed by a single-layer cathode.
  • ITO indium-tin oxide
  • emissive polymer e.g., emissive polymer
  • a relatively high work function metal as the anode, which serves to inject holes into the otherwise filled ⁇ -band of the semiconducting, electroluminescent polymer.
  • Relatively low work function metals are preferred as the cathode material, which serves to inject electrons into the otherwise empty ⁇ *-band of the semiconducting, electroluminescent polymer.
  • the holes which are injected at the anode and the electrons which are injected at the cathode recombine radiatively within the active layer and light is emitted.
  • Typical relatively high work function materials for use as anode materials include transparent conducting thin films of indium/tin-oxide
  • thin films of polyaniline in the conducting emeraldine salt form can be used .
  • Thin films of indium/tin-oxide and thin films of polyaniline in the conducting emeraldine salt form are traditionally preferred because, as transparent electrodes, both permit the emitted light from the LED to radiate from the device in useful levels.
  • Typical relatively low work function metals that are suitable for use as cathode materials are metals such as calcium, magnesium, and barium. Alkali metals tend to be too mobile and act to dope the emissive layer (e.g., electroluminescent polymer), thereby causing shorts and unacceptably short device lifetimes. It is known in the art that cathodes in the form of an ultrathin layer of either a low work function metal [see Cao, Y.; PCT WO 98/57381 and Pichler, K., International Patent Application WO 98/10621] or an ultrathin layer of a low work function metal oxide [Cao, Y.; PCT Application No. 99 US/23775] yield LEDs which offer comparable or better initial performance (e.g., brightness and efficiency) and extended operating lifetime, as compared to similar LEDs which employ conventional thick film cathodes.
  • the brightness and efficiency of polymer LEDs are sufficient for them to be used in certain display applications.
  • the luminous efficiency is a critical parameter. Higher luminous efficiency results directly in a longer period of use without recharging the battery. More generally, higher luminous efficiency enables use in a wider range of display applications.
  • the light output is preferred to be in a narrow cone in the forward direction. In such applications, high radiance is especially important.
  • the present invention relates to a light-emitting diode including an anode that includes a semi-transparent layer having a high reflectivity and a high work function, and a cathode including at least one first cathode layer of a low work function material selected from metal, metal oxide and combinations thereof, and at least one second cathode layer having a high reflectivity and a high work function.
  • the invention achieves improved luminous efficiency and improved radiance.
  • the semi-transparent layer or the second cathode layer has a reflectivity of at least 91.4% and a work function greater than about 4 eV.
  • the semi-transparent layer and/or the second cathode layer has a reflectivity of at least 86% at an emission wavelength of between 400 nm and 500 nm.
  • both the semi- transparent layer and the second cathode layer are silver.
  • the phrase "adjacent to" does not necessarily mean that one layer is immediately next to another layer. An intermediate layer or layers may be provided between layers that are said to be adjacent.
  • the phrase "reflectivity...at wavelength of emission” refers to the reflectivity of a layer at a particular wavelength of light.
  • the wavelength at which the reflectivity is quoted is that of the peak emission from the device.
  • the reflectivity value is read from standard textbook tables, in "Optical Properties of metals and semiconductors". J.H. Weaver, H.P.R. Frederikse in CRC Handbook, Page 12-117;
  • the phrase “semi-transparent” is defined to mean capable of transmitting at least some light, preferably between about 4% and 25% of the amount of light of a particular wavelength of interest.
  • Figure 1 is a schematic drawing of a polymer LED device configuration useful in the present invention. It is not intended to be to scale.
  • Figure 2 shows the sensitivity of the human eye to light, as a function of wavelength.
  • Figure 3 shows the electroluminescence spectrum of a comparative example polymer LED made using Covion PDO 122, with an ITO electrode and a Ba/Al electrode (i.e. Comparative Example A).
  • Figure 4 shows the electroluminescence spectrum of a polymer LED of the present invention, with a 300 A silver anode and a Ba/Ag electrode (i.e., Example 3).
  • Figure 5 shows the electroluminescence spectrum of a comparative polymer LED made using Covion PDY 131 with an ITO electrode and a Ba Al electrode (i.e., Comparative Example C).
  • Figure 6 shows the electroluminescence spectrum of a polymer LED of the present invention, made using Covion PDY 131, with a 300 A silver anode and a Ba/Ag cathode (i.e., Example 4).
  • Figure 7 shows a plot of the luminance vs. voltage curves from devices of
  • an LED device 100 includes a substrate 110 and an anode 120.
  • the anode 120 includes a semi-transparent layer 122 of a high reflectivity metal and an optional passivation layer 128.
  • the semi-transparent layer 122 has a first surface 124 adjacent to the substrate 110 and an opposite second surface 126.
  • At least one emissive layer 130 is disposed between the anode 120 and a cathode 140.
  • the cathode 140 includes a first cathode layer 142 of a low-work function material and a second cathode layer 144 of a high reflectivity metal. Light is emitted through substrate 110 as shown by arrow 150.
  • Suitable materials that can be used as a substrate 110 include, for example, glass and polymeric films.
  • the present invention replaces or augments the transparent electrode with a thin layer of high reflectivity metal layer 126 to increase the efficiency of the device.
  • the anode 120 can be a composite layer, made up of the semi-transparent layer 126 and the passivation layer 128 of conductive polymer coated on the second surface 124 of the semi-transparent layer 126.
  • the anode includes only a conductive, current carrying layer that can serve as a hole-injecting layer, and does not include a passivation layer.
  • the anode includes a transparent conductive layer such as ITO adjacent to the first surface 124 of the semi-transparent layer 126 as well as the passivation layer 128.
  • the anode includes a transparent conductive layer such as ITO adjacent to the first surface 124 of the semi- transparent layer 126 and does not include a passivation layer.
  • the semi- transparent layer 126 of the composite anode 120 or the alternative single anode layer is made of an anode material selected from the group of high reflectivity metals of high work function (typically greater than about 4.0 eV). Examples of suitable metals include silver, gold, aluminum and copper.
  • the semi-transparent layer 126 has a reflectivity of at least 91.4%) at emission wavelength, is a good electrical conductor (having a conductivity of from about 10 2 to about 10 8 ⁇ " ' cm " ', and being capable of forming into a smooth, contiguous film.
  • the semi-transparent layer has a reflectivity of more than about 92% at the wavelength emission.
  • the semi-transparent layer has a reflectivity of between about 92% and about 96.5%o at the wavelength emission. In a fourth preferred embodiment, the semi-transparent layer has a reflectivity of between about 94% and about 96.5% at the wavelength emission. In a fifth preferred embodiment, the semi-transparent layer 126 has reflectivity greater than about 96% at the wavelength emission. In another preferred embodiment, the semi-transparent layer 126 has a reflectivity of at least 86% at an emission wavelength of from 400 nm to 500 nm. Examples of such anode material include silver, aluminum, gold and copper, as well as alloys of such metals.
  • the semi-transparent layer 126 can typically be fabricated using any of the techniques known in the art for deposition of thin films, including, for example, vacuum evaporation, sputter deposition, electron beam deposition, or chemical vapor deposition, using for example, pure metals or alloys or other film precursors.
  • the thickness of the metal layer can be controlled by the rate and time of evaporation/deposition. A typical rate of evaporation/deposition is about 0.5 to 10 A/sec.
  • the thickness of the semi-transparent layer should be thin enough to transmit at least some light (so that it is semi-transparent), and thick enough to provide a continuous layer.
  • the semi-transparent metal layer 126 has a thickness of from about 100 A to about 500 A.
  • the semi-transparent layer has a thickness of from about 250 to about 400 A. In a second preferred embodiment, the semi-transparent layer has a thickness of from about 275 to about 350 A. In a third preferred embodiment, the semi-transparent layer has a thickness of from about 275 to about 325 A.
  • the optional passivation layer 128 of conductive material enables the use of high reflectivity metals with work functions that are not precisely matched with the emissive polymers being utilized.
  • the exact form of conductive material useful in this invention may vary widely and is not critical. Examples of suitable conductive material include, but are not limited to, poly(aniline), poly( aniline) blends, polythiophenes, and polythiophene blends, Useful conductive poly(anilines) include the homopolymer, derivatives and blends with bulk polymers. Examples of useful poly(aniline) include those disclosed in U.S. Patent No. 5,232,631 and U.S. Patent No. 5,723,873.
  • Useful conductive polythiophenes include the homopolymer, derivatives and blends with bulk polymers.
  • useful polythiophenes include poly(ethylenedioxythiophenes) (PEDT), such as poly(3,4-ethylenedioxythiophene, and those disclosed in U.S. Patent No. 5,766,515 and U.S. Patent No. 5,035,926.
  • PEDT poly(ethylenedioxythiophenes)
  • polyaniline and “polythiophenes” are used herein generically to include substituted and unsubstituted materials. It is also used in a manner to include any accompanying dopants, particularly acidic materials used to render the material conductive.
  • the first cathode layer 142 is selected from low work function metals or low work function metal-oxides (typically less than about 3.5 eV).
  • suitable low work function materials include alkali, alkaline earth and lanthanide metals and oxides of alkali, alkaline earth and lanthanide metals.
  • alkali metal is used herein in the conventional sense to refer to elements of Group IA of the periodic table.
  • alkali metal oxide is used herein in the conventional sense to refer to compounds of an alkali metal and oxygen.
  • alkali metal oxides are referred to herein by the chemical formula of the corresponding simple oxide (e.g., Li 2 O, Na 2 O, K 2 O, Rb 2 O, and Cs 2 O); however, this reference to the simple oxide is intended to encompass other oxides, including mixed oxides and non-stoichiometric oxides (e.g., Li x O, Na x O, K x O, Rb x O, and Cs x O, where x is from about 0.1 to about 2).
  • the term "alkaline earth metal" is used herein in the conventional sense to refer to elements of Group IIA of the periodic table.
  • alkaline earth metals include magnesium (i.e., Mg), calcium (i.e., Ca), strontium (i.e., Sr), and barium (i.e., Ba).
  • Mg magnesium
  • Ca calcium
  • strontium i.e., Sr
  • barium i.e., Ba
  • alkaline earth metal oxide is used herein in the conventional sense to refer to compounds of an alkaline earth metal and oxygen.
  • alkaline earth metal oxides are referred to herein by the chemical formula of the corresponding simple oxide (e.g., MgO, BaO, CaO, SrO, and BaO); however, this reference to the simple oxide is intended to encompass other oxides, including mixed oxides and non-stoichiometric oxides (e.g., Mg x O, Ba x O, Ca x O, Sr x O, and Ba x O, where x is from about 0.1 to about 1.
  • lanthanide metal is used herein in the conventional sense to refer to elements of the lanthanide series of the periodic table, from cerium (i.e., Ce) through lutetium (i.e., Lu).
  • Preferred lanthanide metals include samarium (i.e., Sm), Ytterbium (i.e., Yb), and neodymium (i.e., Nd).
  • lanthanide metal oxide is used herein in the conventional sense to refer to compounds of a lanthanide metal and oxygen.
  • lanthanide metal oxides are referred to herein by the chemical formula of the corresponding simple oxide of the +3 valency state (e.g., Sm O , Yb 2 O 3 , and Nd 2 O 3 ); however, this reference to the simple oxide is intended to encompass other oxides, including mixed oxides and non-stoichiometric oxides (e.g., Sm x O, Yb x O, and Nd x O), where x is from about 0.1 to about 1.5.
  • first cathode layer 142 includes low work function metal oxides.
  • the first cathode layer 142 can typically be deposited by thermal vacuum evaporation.
  • the first cathode layer 142 has a thickness of from about 10 to 200 A.
  • a typical rate of evaporation/deposition is from about 0.2 to about 4 A per second.
  • the second cathode layer 144 has a high reflectivity and a high work function, and is made of a material that can be formed into a smooth, contiguous film. Typically the second cathode layer 144 has a work function of greater than 4 eV . In a preferred embodiment, the second cathode layer 144 has a reflectivity of at least 91.4% at emission wavelength. In a second preferred embodiment, the second cathode layer has a reflectivity of between 92% and 96.5% at the wavelength emission. In a third preferred embodiment, the second cathode layer has a reflectivity of between 94% and 96.5% at the wavelength emission.
  • the reflectivity of the second cathode layer is more than 96% at the wavelength emission.
  • a metal that has a reflectivity of at least 86% at an emission wavelength of from 400 nm to 500 nm is used as the second cathode layer 144.
  • the second cathode layer 144 includes a cathode material selected from metals and metal alloys. Examples of suitable high work function metals include aluminum, silver, copper, gold and the like, as well as alloys of such metals.
  • a preferred embodiment uses metal or metal alloy that has a reflectivity of at least 91.4% at the emission wavelength as both the semi-transparent layer 126 and as the second cathode layer 144.
  • a metal that has a reflectivity of at least 86% at an emission wavelength of from 400 nm to 500 nm are used as both the semi-transparent layer 126 and as the second cathode layer 144.
  • the second cathode layer 144 need not be the same material as used for the semi-transparent layer 126.
  • gold could be used for the high work function semi-transparent anode
  • silver could be used as the high reflectivity metal layer in the bilayer cathode.
  • the high reflectivity layer 142 has a metal with a reflectivity of at least 91.4%, or a reflectivity of at least 86% at an emission wavelength of from 400 nm to 500 nm, as both the second cathode layer 144 and as the semi-transparent layer 126.
  • silver (Ag) is used as both the high reflectivity metal layer in the bilayer cathode and as the semi-transparent anode.
  • a multi-layer cathode system (not shown) can be used.
  • a first layer of high reflectivity cathode layer (preferably, of sufficient thickness to be opaque) may be covered by a layer of another high reflectivity cathode layer, which may be more or less reflective than the first high reflectivity cathode layer.
  • the uppermost metal may be any stable metal capable of forming a smooth, contiguous film, for example, aluminum or aluminum alloy.
  • Subsequent layers can be added for specific function such as for example, for passivating and sealing of the device.
  • layers useful for sealing the device include an air-stable capping layer.
  • the term "air-stable" refers to the ability to protect the layers underneath the capping layer from ambient oxygen and moisture that may be present around the device. Suitable materials for air-stable capping layer include a metal or metal alloy.
  • the second cathode layer 144 can be fabricated using known deposition techniques. A typical rate of evaporation deposition is from about 1 to 20 A/sec. The thickness of the second cathode layer 144 should be thick enough to cover the first cathode layer and be opaque enough to give high reflectivity at the wavelength of interest. Typically, the second cathode layer has a thickness of at least about 800 A. Emissive layers
  • the at least one emissive layer 130 (also referred to as the luminescent layer or the electroluminescent layer) comprises an electroluminescent, semiconducting, organic material.
  • materials for use as emissive layers in LEDs include polymeric or molecular materials that exhibitelectroluminescence, and still more specifically, materials that exhibit electroluminescence and that are soluble and processible from solution into uniform thin films.
  • useful molecular emissive materials include simple organic molecules such as anthracene, thiadiazole derivatives, and coumarin derivatives are known to show electroluminescence.
  • complexes such as 8-hydroxyquinolate with trivalent metal ions, particularly aluminum are also suitable emissive materials, as described in, for example, Tang et al., U.S. Patent 5,552,678.
  • Examples of useful polymeric emissive materials include semiconductive conjugated polymers.
  • suitable semiconductive conjugated polymers include poly(phenylene vinylene), PPV, and soluble derivatives of PPV such as poly(2-methoxy-5-(2'-ethyl-hexyloxy)-l,4-phenylene vinylene), MEH-PPV, a semiconducting polymer with an energy gap E réelle of- 2.1 eV. This material is described in more detail in Wudl, F., Hoger, S., Zhang, C, Pakbaz, K., Heeger, A. J., Polymer Preprints, 1993, 34 (no. 1), 197.
  • BCHA-PPV a semiconducting polymer with an energy gap Eg of- 2.2 eV.
  • Other suitable polymers include, for example, the poly(3-alkylthiophenes) as described by Braun, D., Gustafsson, G., McBranch D., and Heeger, A. J., "Electroluminescence and electrical transport in poly(3-thiophene diodes" J. Appl.
  • Blends of conjugated semiconducting polymers with non-conjugated host or carrier polymers are also useful as the active layer in polymer LEDs, as described by Zhang, C, von Seggern, H., Pakbaz, K., Kraabel, B., Schmidt, H.-
  • the electroluminescent, organic material is an electroluminescent, semiconducting, organic polymer, which polymer is a ⁇ -conjugated polymer or is a co-polymer which contains segments of ⁇ -conjugated moieties.
  • Conjugated polymers are well known in the art. Suitable examples of electroluminescent, semiconducting, organic polymers include, but are in no way limited to:
  • rigid rod polymers such as poly(/?-phenylene-2,6- benzobisthiazole), poly( -phenylene-2,6-benzobisoxazole), poly(p-phenylene-2,6- benzimidazole), and their derivatives; and the like.
  • the electroluminescent, semiconducting, organic material is an electroluminescent, semiconducting, organic polymer.
  • the electroluminescent, semiconducting, organic material is selected from the group consisting of: poly(p-phenylene vinylene)s, poly( arylene vinylene)s, poly(p-phenylene)s, and poly(arylene)s.
  • the emissive layer may also comprise other materials, such as carrier polymers and additives.
  • the emissive layer has a thickness of about 600 to about 1100 A, depending on the desired wavelength of emission and hence the cavity size.
  • the emissive layer can typically be fabricated using any of the techniques known in the art, particularly those methods known in the art of organic molecular and organic polymer LEDs, including, for example, casting directly from solution, and casting of a polymer precursor followed by reaction (e.g., by heating) to form the desired polymer.
  • a multi-layer cathode comprising at least one ultrathin layer of the low work function metal or metal-oxide (for efficient electron injection) capped with a high reflectivity metal, together with an anode comprising a semi-transparent, high reflectivity metal layer, one achieves excellent electron injection, high reflectivity, high Q in a microcavity architecture, and thereby improved luminous efficiency and improved radiance. It is believed that a microcavity effect enhances the luminous efficiency and brightness.
  • the relatively high reflectivity of the semi-transparent metal anode and the cathode bilayer of the device result in the formation of the high performance polymer LED in a microcavity structure.
  • microcavity effect results in a narrowing of the bandwidth of light emitted.
  • the result of this narrowing is to shift the wavelength of the majority of the photons emitted to an area where the human eye is more sensitive (see Figure 2) and thereby to significantly increase the luminous efficiency of the light emitting structure.
  • the broad electroluminescence spectrum of a polymer LED fabricated in the traditional structure with the same luminescent polymer is shown for comparison in Figure 3.
  • Encapsulation It is typically preferred to encapsulate the LEDs of the present invention to prevent long term degradation. Methods of encapsulation are well known in the art. For example, devices can be sealed between glass plates, or sealed between barrier polymer layers.
  • Efficiencies were measured using a UDT S370 optometer (available from UDT, a part of Gamma Scientific, of San Diego, CA) which includes a photodiode that is calibrated using the procedure described below:
  • the photodiode is calibrated as follows: A NIST calibrated light source, with a known, uniform light emission was used. A mask was used so that only a light beam the size of the pixel active area was emitted. The photodiode was placed at a given distance from the light, and the number of volts were recorded. Thus, the number of volts corresponding to a particular light intensity (340 cd/m 2 ) were known.
  • a polymer LED device was fabricated as follows: On a glass substrate partially coated with ITO was spin-coated at 6,000 rpm in air, a solution of poly(aniline) blend (general method of preparation is described in U.S. Patent No. 5,626,795). The resulting film was dried on a hot plate at 50 °C for 30 minutes and then overnight under vacuum at 70 °C.
  • a polymer LED device was fabricated as in Comparative Example A, except that the ITO was replaced with a vapor deposited layer of silver at a thickness of 300 A.
  • EXAMPLE 2 A polymer LED device was fabricated as in Comparative Example A, except that a layer of silver at a thickness of 300 A was vapor deposited on top of the ITO. The performance of this device is similar to that of Example 1 and Example 3, as described below.
  • EXAMPLE 3 A polymer LED device was fabricated as described in Example 1 or
  • Example 2 except that the aluminum layer was replaced with a vapor deposited layer of silver at a thickness of 3,000 A. Efficiency of these devices were measured.
  • Table 1 above shows that replacement of ITO with 300 A of silver (but leaving the aluminum in place) improves the light output somewhat, yielding a 12%) increase in brightness (i.e., Comparative Example A vs. Example 1).
  • Example 3 the most dramatic improvement is achieved in devices of the structure described by Example 3, where a silver anode is used, and silver is the high reflectivity metal used in the bilayer cathode structure.
  • the device from Example 3 is more than 80% brighter than that of the device in Comparative Example A.
  • Table 1 also illustrates that simply replacing aluminum with silver at the cathode side (Comparative Example A vs. B) and leaving the anode side unchanged does not improve the efficiency of the device. In fact, there is a reduction in light output.
  • the emission from the devices of the Examples 1 and 3 was also be measured in radiometric units (W/Sr/m 2 ), which measurement ignores the effect of the human eye response and measures light output in absolute terms. Results are summarized in Table 2 below. Note that the radiance from the device fabricated according to this invention (Example 3) was 2.5 times greater than that from a device fabricated in the traditional polymer LED structure with the same luminescent polymer.
  • Figure 4 shows the electroluminesence spectrum of a device from Example 3. Note the narrowing of the electroluminescence emission relative to the spectrum seen in Figure 3, even though the same emissive polymer is used in both devices. It is believed that confinement of the Covion PDO 122 in the microcavity of Example 3 results in narrowing of the emission.
  • a polymer LED device was fabricated as in Comparative Example A, except that the semi-conducting conjugated polymer employed was Covion PDY 131, available from Covion Organic Semiconductors GmbH (Frankfurt, Germany), and the film of Covion PDY 131 was spincoated at 3,000 rpm.
  • the barium layer thickness was 15 A.
  • EXAMPLE 4 A polymer LED device was fabricated as in Example 3 except that the semi-conducting conjugated polymer employed was Covion PDY 131 and the film of Covion PDY 131 was spincoated at 3,000 rpm. The Ba thickness was 15 A.
  • Tables 3 and 4 above show results from devices of Comparative Example C and Example 4. It is clear that the invention is not limited to one semi-conducting polymer, because major improvements in light output are also realized with another semi-conducting polymer, when the cathode capping metal is changed from aluminum to silver, and the ITO is replaced by silver at the anode side.
  • the device from Example 4 exhibited a luminous efficiency that was 2.5 times greater than that of the device in Comparative Example C (Table 3).
  • the devices of Examples 1 and 3 as well as Comparative Example A were tested under what is considered to be very high current conditions (0.5 msec pulses, 0.5% duty cycle, at 5 mA per pixel) in order to accelerate the aging process and thus enable testing of many devices.
  • the device of Comparative Example A emitted the least light and decreased to zero most rapidly (no light emission after 2.5 hours).
  • the devices of Examples 1 and 3 exhibit very different behavior over their lifetimes. In each case, the brightness decreases to approximately 50% of the initial value and then remains at that level. In the cases of devices from Examples 1 and 3, the point of failure could not be reached before testing was deemed complete.
  • the present invention obtains improved operating lifetimes with the silver structure than with ITO devices.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Il est possible d'augmenter le rendement lumineux et la luminance énergétique des diodes électroluminescentes (DEL) produites à partir de matières organiques émissives par l'utilisation d'une cathode multicouches comprenant une couche à faible travail d'extraction et une couche haute réflectivité à travail d'extraction élevé, associées à un matériau d'anode haute réflectivité à travail d'extraction élevé.
EP00947472A 1999-07-19 2000-07-18 Dispositifs electroluminescents polymeres a longue duree de vie presentant un rendement lumineux et une luminance energetique ameliores Withdrawn EP1196955A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14425199P 1999-07-19 1999-07-19
US144251P 1999-07-19
PCT/US2000/019476 WO2001006576A1 (fr) 1999-07-19 2000-07-18 Dispositifs electroluminescents polymeres a longue duree de vie presentant un rendement lumineux et une luminance energetique ameliores

Publications (1)

Publication Number Publication Date
EP1196955A1 true EP1196955A1 (fr) 2002-04-17

Family

ID=22507760

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00947472A Withdrawn EP1196955A1 (fr) 1999-07-19 2000-07-18 Dispositifs electroluminescents polymeres a longue duree de vie presentant un rendement lumineux et une luminance energetique ameliores

Country Status (7)

Country Link
EP (1) EP1196955A1 (fr)
JP (1) JP2003505823A (fr)
CN (1) CN1182601C (fr)
CA (1) CA2377077A1 (fr)
MY (1) MY133491A (fr)
TW (1) TW493289B (fr)
WO (1) WO2001006576A1 (fr)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100377321B1 (ko) 1999-12-31 2003-03-26 주식회사 엘지화학 피-형 반도체 성질을 갖는 유기 화합물을 포함하는 전기소자
US7560175B2 (en) * 1999-12-31 2009-07-14 Lg Chem, Ltd. Electroluminescent devices with low work function anode
KR100721656B1 (ko) 2005-11-01 2007-05-23 주식회사 엘지화학 유기 전기 소자
US6680570B2 (en) * 2001-03-21 2004-01-20 Agilent Technologies, Inc. Polymer organic light emitting device with improved color control
US7701130B2 (en) * 2001-08-24 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Luminous device with conductive film
WO2003019696A2 (fr) * 2001-08-25 2003-03-06 Cambridge Display Technology Limited Dispositif electroluminescent
JP2003123987A (ja) * 2001-10-11 2003-04-25 Toyota Central Res & Dev Lab Inc 光共振器
GB2405746B (en) 2002-05-22 2005-10-26 Fuji Electric Holdings Co Organic el light-emitting device
KR100875097B1 (ko) * 2002-09-18 2008-12-19 삼성모바일디스플레이주식회사 광학 공진 효과를 이용한 유기 전계발광 소자
JP4290953B2 (ja) * 2002-09-26 2009-07-08 奇美電子股▲ふん▼有限公司 画像表示装置、有機ｅｌ素子および画像表示装置の製造方法
US6861800B2 (en) * 2003-02-18 2005-03-01 Eastman Kodak Company Tuned microcavity color OLED display
JP4170138B2 (ja) * 2003-04-28 2008-10-22 三菱電機株式会社 有機電界発光素子およびその製造方法
KR100527193B1 (ko) * 2003-06-03 2005-11-08 삼성에스디아이 주식회사 다층구조 화소전극을 갖는 유기전계발광소자 및 그의제조방법
KR100527191B1 (ko) * 2003-06-03 2005-11-08 삼성에스디아이 주식회사 저저항 캐소드를 사용하는 유기 전계 발광 소자
KR100528916B1 (ko) * 2003-06-25 2005-11-15 삼성에스디아이 주식회사 배면발광형 전계발광소자
EP2975665B1 (fr) 2003-09-19 2017-02-01 Sony Corporation Unité d'affichage
KR100579184B1 (ko) * 2003-11-24 2006-05-11 삼성에스디아이 주식회사 유기전계발광표시장치
JPWO2005062678A1 (ja) * 2003-12-19 2007-07-19 出光興産株式会社 有機エレクトロルミネッセンス素子、導電積層体及び表示装置
JP4857427B2 (ja) * 2004-03-25 2012-01-18 独立行政法人産業技術総合研究所 半導体装置用の光透過性電極、半導体装置および電極の製造方法
GB0408486D0 (en) 2004-04-16 2004-05-19 Koninkl Philips Electronics Nv Electroluminescent display device
CN100359711C (zh) * 2004-08-17 2008-01-02 友达光电股份有限公司 顶发光型有机发光二极管结构及其制作方法
WO2006019270A1 (fr) 2004-08-19 2006-02-23 Lg Chem. Ltd. Dispositif lumineux organique comprenant une couche tampon et procede de fabrication correspondant
GB0505298D0 (en) * 2005-03-15 2005-04-20 Cambridge Display Tech Ltd Light emissive device
KR100845694B1 (ko) 2006-01-18 2008-07-11 주식회사 엘지화학 적층형 유기발광소자
JP2007335347A (ja) * 2006-06-19 2007-12-27 Seiko Epson Corp 発光装置、画像形成装置、表示装置および電子機器
US7622865B2 (en) 2006-06-19 2009-11-24 Seiko Epson Corporation Light-emitting device, image forming apparatus, display device, and electronic apparatus
KR100813854B1 (ko) * 2007-04-23 2008-03-17 삼성에스디아이 주식회사 유기 발광 소자 및 그 제조방법
GB2459895B (en) 2008-05-09 2011-04-27 Cambridge Display Technology Limited Organic light emissive device
CN101577314B (zh) * 2009-03-27 2011-03-16 福建华映显示科技有限公司 有机电致发光元件
JP5453952B2 (ja) * 2009-06-23 2014-03-26 ソニー株式会社 有機エレクトロルミネッセンス素子およびその製造方法、並びに表示装置およびその製造方法
GB2475246B (en) * 2009-11-10 2012-02-29 Cambridge Display Tech Ltd Organic opto-electronic device and method
KR102447311B1 (ko) * 2015-10-28 2022-09-26 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 유기 발광 표시 장치
CN110690258A (zh) 2019-09-02 2020-01-14 武汉华星光电半导体显示技术有限公司 显示器结构

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5619058A (en) * 1994-02-17 1997-04-08 Lucent Technologies Inc. Light emitting diode device having four discrete regions
WO1999059379A2 (fr) * 1998-05-14 1999-11-18 Fed Corporation Dispositif a diodes electroluminescentes organiques conçu pour etre utilise avec des substrats opaques

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0106576A1 *

Also Published As

Publication number Publication date
CN1373908A (zh) 2002-10-09
MY133491A (en) 2007-11-30
CA2377077A1 (fr) 2001-01-25
JP2003505823A (ja) 2003-02-12
TW493289B (en) 2002-07-01
CN1182601C (zh) 2004-12-29
WO2001006576A1 (fr) 2001-01-25

Similar Documents

Publication Publication Date Title
WO2001006576A1 (fr) Dispositifs electroluminescents polymeres a longue duree de vie presentant un rendement lumineux et une luminance energetique ameliores
US6849869B1 (en) Long lifetime polymer light-emitting devices with improved luminous efficiency and improved radiance
US6563262B1 (en) Thin metal-oxide layer as stable electron-injecting electrode for light emitting diodes
US6452218B1 (en) Ultra-thin alkaline earth metals as stable electron-injecting electrodes for polymer light emitting diodes
JP5017433B2 (ja) エレクトロルミネッセント装置
US6866946B2 (en) High resistance polyaniline useful in high efficiency pixellated polymer electronic displays
Yang et al. Electron injection polymer for polymer light‐emitting diodes
US20020036291A1 (en) Multilayer structures as stable hole-injecting electrodes for use in high efficiency organic electronic devices
JP2012059709A (ja) オプトエレクトロニクスデバイス
EP1234347A1 (fr) Polyaniline a resistance elevee utilisee dans des affichages electroniques polymeres pixelises a efficacite elevee
JP4669785B2 (ja) 発光素子及び表示装置
Oh et al. Electroluminescence of polymer blends composed of a PVK and a copolymer containing SiPh-PPV and MEH-PPV unit
Yang et al. Poly (1, 4‐phenylene‐1, 2‐diphenylvinylene) and tris (8‐quinolinolato) aluminum bilayer light‐emitting diodes

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20011219

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: DUPONT DISPLAYS, INC.

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20050614