EP1192299A1 - Dotieren von kristallinen substraten - Google Patents

Dotieren von kristallinen substraten

Info

Publication number
EP1192299A1
EP1192299A1 EP00931470A EP00931470A EP1192299A1 EP 1192299 A1 EP1192299 A1 EP 1192299A1 EP 00931470 A EP00931470 A EP 00931470A EP 00931470 A EP00931470 A EP 00931470A EP 1192299 A1 EP1192299 A1 EP 1192299A1
Authority
EP
European Patent Office
Prior art keywords
layer
damaged layer
doped
doped layer
damaged
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00931470A
Other languages
English (en)
French (fr)
Inventor
Johan Frans Prins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
De Beers Industrial Diamond Division Pty Ltd
Original Assignee
De Beers Industrial Diamond Division Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by De Beers Industrial Diamond Division Pty Ltd filed Critical De Beers Industrial Diamond Division Pty Ltd
Publication of EP1192299A1 publication Critical patent/EP1192299A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation

Definitions

  • This invention relates to the doping of crystalline substrates
  • Dopant atoms can be introduced into the substrate by using ion implantation techniques
  • European Patent Publication No 0 209 257 discloses a method of producing a doped diamond which includes the steps of bombarding the diamond with ions of a suitable energy to produce a damaged layer of point defects in the form of vacancies and interstitials within the crystal lattice the bombardment being carried out at a temperature sufficiently low to inhibit diffusion of the point defects, followed by annealing the damaged substrate
  • Dopant atoms are introduced into the damaged layer by ion implantation during before or after the damage-creating bombardment The dopant atom implantation also takes place at a temperature sufficiently low to inhibit diffusion of the point defects in the damaged layer
  • European Patent Publication No 0 573 312 discloses a method of producing a doped diamond which includes the steps of creating a damaged layer of point defects in the form of vacancies and interstitial atoms within the crystal lattice of the diamond using low dose ion implantation at low temperature, introducing dopant atoms into the damaged layer using low dose ion implantation at low temperature, rapidly
  • European Patent Publication No 0 750 058 discloses a method of doping a crystalline substrate such as diamond which includes the steps of providing the substrate, creating a damaged layer containing vacancies and interstitial atoms in the crystal lattice, implanting dopant atoms under conditions to create a second damaged layer separate from the first damaged layer and containing the dopant atoms, and causing dopant atoms in the second layer to diffuse out of that layer and into vacancies in the first layer and thereby occupy substitutional positions in that layer
  • a method of producing a doped crystalline substrate having a crystal lattice includes the steps of providing a crystalline substrate having a crystal lattice implanting dopant atoms into the substrate to create a doped layer implanting ions to create a damaged layer in the substrate which is separate from the doped layer and contains vacancies and interstitial atoms of the crystalline substrate and causing interstitial atoms from the damaged layer to diffuse out of that layer and into vacancies in the doped layer
  • the invention involves producing a doped layer and thereafter reducing the damage created in the doped layer by creating a damaged layer containing interstitial atoms and causing the interstitial atoms from this layer to diffuse into the doped layer and occupy or mop up vacancies in the doped layer
  • the damaged layer is created separate from the doped layer It may be deeper than the doped layer it may be shallower than the doped layer, or it may be adjacent the doped layer
  • the interstitial atoms of the crystalline substrate can be caused to diffuse into the doped layer at the same time as the damaged layer is created for example by carrying out the ion implantation to create the damaged layer at temperatures at which the interstitial atoms can diffuse Alternatively if the ion implantation to create the damaged layer is carried out at low temperatures at which interstitial atoms cannot diffuse, then diffusion of the interstitials can take place in a subsequent annealing step
  • FIGS 1 to 3 illustrate graphically results produced in experiments using the method of the invention DESCRIPTION OF EMBODIMENTS
  • the dopant atoms may be any known in the art such as boron, oxygen, nitrogen, phosphorus, arsenic, or any other atom which imparts electrical or optical properties to the substrate
  • a range of energies will preferably be produced creating a relatively wide doped layer
  • the dose will also typically be a relatively low dose thereby limiting the amount of damage created in the doped layer
  • the low dose dopant implantation will typically be such as to create a density of vacancies in the first layer of less than 5 x 10 20 cm 3 , i e less than 0,3 atomic percent
  • the creation of the damaged layer, separate from the doped layer, is achieved using ions of selected size and energy
  • the size and energy may be selected such that the damaged layer is deeper than the doped layer
  • ions of selected size and energy may be selected such that the damaged layer is deeper than the doped layer
  • High energy ions by virtue of their speed, create little damage in the shallow doped layer It is only when ions are slowed down to lower energies as they reach deeper levels of the substrate that they ballistically dislodge atoms in the substrate to create interstitial atoms and vacancies It is preferable that damage to the doped layer be kept to a minimum
  • the damaged layer can also be shallower than the doped layer In this form of the invention, heavier atoms will generally be used for example nitrogen, carbon or oxygen, at relatively low energies After the interstitials in the damaged layer have been caused to diffuse into the doped layer the damaged layer may be removed to expose the doped layer The damaged layer can also be created adjacent for example to the side of, the doped layer
  • Interstitials created in the damaged layer are caused to diffuse into the doped layer where they find and enter vacancies
  • This movement of interstitials may be caused by suitably annealing the ion implanted crystalline substrate
  • the anneal is preferably a rapid anneal Rapid anneal means that the annealing temperature is reached in a time of less than two minutes or even as fast as 20 seconds and preferably in a time of less than five seconds
  • the annealing temperature will typically be in the range of 50°C to 900°C
  • the interstitials may also be caused to diffuse into the doped layer during the creation of the damaged layer This will happen at temperatures at which the interstitial atoms can diffuse, for example if room temperature or higher temperature conditions are used during the creation of the damaged layer
  • the crystalline substrate will typically be a large band gap hard crystalline material such as diamond, cubic boron nitride, or silicon carbide
  • the invention has particular application to the doping of diamond
  • the implantation with dopant atoms and the damage-creating ions can be carried out simultaneously or sequentially

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
EP00931470A 1999-05-31 2000-05-24 Dotieren von kristallinen substraten Withdrawn EP1192299A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA9903665 1999-05-31
ZA993665 1999-05-31
PCT/IB2000/000694 WO2000073543A1 (en) 1999-05-31 2000-05-24 Doping of crystalline substrates

Publications (1)

Publication Number Publication Date
EP1192299A1 true EP1192299A1 (de) 2002-04-03

Family

ID=25587753

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00931470A Withdrawn EP1192299A1 (de) 1999-05-31 2000-05-24 Dotieren von kristallinen substraten

Country Status (4)

Country Link
EP (1) EP1192299A1 (de)
JP (1) JP2003500866A (de)
AU (1) AU4941900A (de)
WO (1) WO2000073543A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003504838A (ja) * 1999-07-02 2003-02-04 デ ビアス インダストリアル ダイアモンズ （プロプライエタリイ）リミテッド ドープしたダイヤモンド
WO2006081348A1 (en) * 2005-01-26 2006-08-03 Apollo Diamond, Inc. Gallium nitride light emitting devices on diamond
JP5155536B2 (ja) 2006-07-28 2013-03-06 一般財団法人電力中央研究所 ＳｉＣ結晶の質を向上させる方法およびＳｉＣ半導体素子の製造方法
JP5142257B2 (ja) * 2007-09-27 2013-02-13 独立行政法人産業技術総合研究所 不純物イオン注入層の電気的活性化方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1269359A (en) * 1968-08-22 1972-04-06 Atomic Energy Authority Uk Improvements in or relating to semiconductors and methods of doping semiconductors
IL79107A (en) * 1985-06-17 1989-03-31 De Beers Ind Diamond Ion implantation in crystalline substrate
ZA933939B (en) * 1992-06-05 1993-12-30 De Beers Ind Diamond Diamond doping
JPH09106958A (ja) * 1995-06-23 1997-04-22 De Beers Ind Diamond Div Ltd 結晶基体のドーピング

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0073543A1 *

Also Published As

Publication number Publication date
AU4941900A (en) 2000-12-18
JP2003500866A (ja) 2003-01-07
WO2000073543A1 (en) 2000-12-07

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