AU4941900A - Doping of crystalline substrates - Google Patents

Doping of crystalline substrates

Info

Publication number
AU4941900A
AU4941900A AU49419/00A AU4941900A AU4941900A AU 4941900 A AU4941900 A AU 4941900A AU 49419/00 A AU49419/00 A AU 49419/00A AU 4941900 A AU4941900 A AU 4941900A AU 4941900 A AU4941900 A AU 4941900A
Authority
AU
Australia
Prior art keywords
doping
crystalline substrates
crystalline
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU49419/00A
Inventor
Johan Frans Prins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
De Beers Industrial Diamond Division Pty Ltd
Original Assignee
De Beers Industrial Diamond Division Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by De Beers Industrial Diamond Division Pty Ltd filed Critical De Beers Industrial Diamond Division Pty Ltd
Publication of AU4941900A publication Critical patent/AU4941900A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
AU49419/00A 1999-05-31 2000-05-24 Doping of crystalline substrates Abandoned AU4941900A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA993665 1999-05-31
ZA99/3665 1999-05-31
PCT/IB2000/000694 WO2000073543A1 (en) 1999-05-31 2000-05-24 Doping of crystalline substrates

Publications (1)

Publication Number Publication Date
AU4941900A true AU4941900A (en) 2000-12-18

Family

ID=25587753

Family Applications (1)

Application Number Title Priority Date Filing Date
AU49419/00A Abandoned AU4941900A (en) 1999-05-31 2000-05-24 Doping of crystalline substrates

Country Status (4)

Country Link
EP (1) EP1192299A1 (en)
JP (1) JP2003500866A (en)
AU (1) AU4941900A (en)
WO (1) WO2000073543A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001002628A1 (en) * 1999-07-02 2001-01-11 De Beers Industrial Diamonds (Proprietary) Limited Doped diamond
US8129733B2 (en) 2005-01-26 2012-03-06 Apollo Diamond, Inc Gallium nitride light emitting devices on diamond
JP5155536B2 (en) * 2006-07-28 2013-03-06 一般財団法人電力中央研究所 Method for improving the quality of SiC crystal and method for manufacturing SiC semiconductor device
JP5142257B2 (en) * 2007-09-27 2013-02-13 独立行政法人産業技術総合研究所 Electrical activation method of impurity ion implantation layer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1269359A (en) * 1968-08-22 1972-04-06 Atomic Energy Authority Uk Improvements in or relating to semiconductors and methods of doping semiconductors
IL79107A (en) * 1985-06-17 1989-03-31 De Beers Ind Diamond Ion implantation in crystalline substrate
ZA933939B (en) * 1992-06-05 1993-12-30 De Beers Ind Diamond Diamond doping
JPH09106958A (en) * 1995-06-23 1997-04-22 De Beers Ind Diamond Div Ltd Doping of crystal substrate

Also Published As

Publication number Publication date
WO2000073543A1 (en) 2000-12-07
EP1192299A1 (en) 2002-04-03
JP2003500866A (en) 2003-01-07

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase