WO2000073543A1 - Doping of crystalline substrates - Google Patents
Doping of crystalline substrates Download PDFInfo
- Publication number
- WO2000073543A1 WO2000073543A1 PCT/IB2000/000694 IB0000694W WO0073543A1 WO 2000073543 A1 WO2000073543 A1 WO 2000073543A1 IB 0000694 W IB0000694 W IB 0000694W WO 0073543 A1 WO0073543 A1 WO 0073543A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- damaged layer
- doped
- doped layer
- damaged
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
Definitions
- This invention relates to the doping of crystalline substrates
- Dopant atoms can be introduced into the substrate by using ion implantation techniques
- European Patent Publication No 0 209 257 discloses a method of producing a doped diamond which includes the steps of bombarding the diamond with ions of a suitable energy to produce a damaged layer of point defects in the form of vacancies and interstitials within the crystal lattice the bombardment being carried out at a temperature sufficiently low to inhibit diffusion of the point defects, followed by annealing the damaged substrate
- Dopant atoms are introduced into the damaged layer by ion implantation during before or after the damage-creating bombardment The dopant atom implantation also takes place at a temperature sufficiently low to inhibit diffusion of the point defects in the damaged layer
- European Patent Publication No 0 573 312 discloses a method of producing a doped diamond which includes the steps of creating a damaged layer of point defects in the form of vacancies and interstitial atoms within the crystal lattice of the diamond using low dose ion implantation at low temperature, introducing dopant atoms into the damaged layer using low dose ion implantation at low temperature, rapidly
- European Patent Publication No 0 750 058 discloses a method of doping a crystalline substrate such as diamond which includes the steps of providing the substrate, creating a damaged layer containing vacancies and interstitial atoms in the crystal lattice, implanting dopant atoms under conditions to create a second damaged layer separate from the first damaged layer and containing the dopant atoms, and causing dopant atoms in the second layer to diffuse out of that layer and into vacancies in the first layer and thereby occupy substitutional positions in that layer
- a method of producing a doped crystalline substrate having a crystal lattice includes the steps of providing a crystalline substrate having a crystal lattice implanting dopant atoms into the substrate to create a doped layer implanting ions to create a damaged layer in the substrate which is separate from the doped layer and contains vacancies and interstitial atoms of the crystalline substrate and causing interstitial atoms from the damaged layer to diffuse out of that layer and into vacancies in the doped layer
- the invention involves producing a doped layer and thereafter reducing the damage created in the doped layer by creating a damaged layer containing interstitial atoms and causing the interstitial atoms from this layer to diffuse into the doped layer and occupy or mop up vacancies in the doped layer
- the damaged layer is created separate from the doped layer It may be deeper than the doped layer it may be shallower than the doped layer, or it may be adjacent the doped layer
- the interstitial atoms of the crystalline substrate can be caused to diffuse into the doped layer at the same time as the damaged layer is created for example by carrying out the ion implantation to create the damaged layer at temperatures at which the interstitial atoms can diffuse Alternatively if the ion implantation to create the damaged layer is carried out at low temperatures at which interstitial atoms cannot diffuse, then diffusion of the interstitials can take place in a subsequent annealing step
- FIGS 1 to 3 illustrate graphically results produced in experiments using the method of the invention DESCRIPTION OF EMBODIMENTS
- the dopant atoms may be any known in the art such as boron, oxygen, nitrogen, phosphorus, arsenic, or any other atom which imparts electrical or optical properties to the substrate
- a range of energies will preferably be produced creating a relatively wide doped layer
- the dose will also typically be a relatively low dose thereby limiting the amount of damage created in the doped layer
- the low dose dopant implantation will typically be such as to create a density of vacancies in the first layer of less than 5 x 10 20 cm 3 , i e less than 0,3 atomic percent
- the creation of the damaged layer, separate from the doped layer, is achieved using ions of selected size and energy
- the size and energy may be selected such that the damaged layer is deeper than the doped layer
- ions of selected size and energy may be selected such that the damaged layer is deeper than the doped layer
- High energy ions by virtue of their speed, create little damage in the shallow doped layer It is only when ions are slowed down to lower energies as they reach deeper levels of the substrate that they ballistically dislodge atoms in the substrate to create interstitial atoms and vacancies It is preferable that damage to the doped layer be kept to a minimum
- the damaged layer can also be shallower than the doped layer In this form of the invention, heavier atoms will generally be used for example nitrogen, carbon or oxygen, at relatively low energies After the interstitials in the damaged layer have been caused to diffuse into the doped layer the damaged layer may be removed to expose the doped layer The damaged layer can also be created adjacent for example to the side of, the doped layer
- Interstitials created in the damaged layer are caused to diffuse into the doped layer where they find and enter vacancies
- This movement of interstitials may be caused by suitably annealing the ion implanted crystalline substrate
- the anneal is preferably a rapid anneal Rapid anneal means that the annealing temperature is reached in a time of less than two minutes or even as fast as 20 seconds and preferably in a time of less than five seconds
- the annealing temperature will typically be in the range of 50°C to 900°C
- the interstitials may also be caused to diffuse into the doped layer during the creation of the damaged layer This will happen at temperatures at which the interstitial atoms can diffuse, for example if room temperature or higher temperature conditions are used during the creation of the damaged layer
- the crystalline substrate will typically be a large band gap hard crystalline material such as diamond, cubic boron nitride, or silicon carbide
- the invention has particular application to the doping of diamond
- the implantation with dopant atoms and the damage-creating ions can be carried out simultaneously or sequentially
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00931470A EP1192299A1 (en) | 1999-05-31 | 2000-05-24 | Doping of crystalline substrates |
JP2001500026A JP2003500866A (en) | 1999-05-31 | 2000-05-24 | Doping of crystalline substrate |
AU49419/00A AU4941900A (en) | 1999-05-31 | 2000-05-24 | Doping of crystalline substrates |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ZA99/3665 | 1999-05-31 | ||
ZA993665 | 1999-05-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000073543A1 true WO2000073543A1 (en) | 2000-12-07 |
Family
ID=25587753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2000/000694 WO2000073543A1 (en) | 1999-05-31 | 2000-05-24 | Doping of crystalline substrates |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1192299A1 (en) |
JP (1) | JP2003500866A (en) |
AU (1) | AU4941900A (en) |
WO (1) | WO2000073543A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1194619A1 (en) * | 1999-07-02 | 2002-04-10 | De Beers Industrial Diamonds (Proprietary) Limited | Doped diamond |
WO2006081348A1 (en) * | 2005-01-26 | 2006-08-03 | Apollo Diamond, Inc. | Gallium nitride light emitting devices on diamond |
US8815708B2 (en) | 2006-07-28 | 2014-08-26 | Central Research Institute Of Electric Power Industry | Method for improving the quality of a SiC crystal |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5142257B2 (en) * | 2007-09-27 | 2013-02-13 | 独立行政法人産業技術総合研究所 | Electrical activation method of impurity ion implantation layer |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2016207A1 (en) * | 1968-08-22 | 1970-05-08 | Atomic Energy Authority Uk | |
EP0209257A1 (en) * | 1985-06-17 | 1987-01-21 | De Beers Industrial Diamond Division (Proprietary) Limited | Ion implantation |
EP0573312A2 (en) * | 1992-06-05 | 1993-12-08 | De Beers Industrial Diamond Division (Proprietary) Limited | Diamond doping |
EP0750058A2 (en) * | 1995-06-23 | 1996-12-27 | De Beers Industrial Diamond Division (Proprietary) Limited | Doping of crystalline substrates |
-
2000
- 2000-05-24 JP JP2001500026A patent/JP2003500866A/en active Pending
- 2000-05-24 AU AU49419/00A patent/AU4941900A/en not_active Abandoned
- 2000-05-24 EP EP00931470A patent/EP1192299A1/en not_active Withdrawn
- 2000-05-24 WO PCT/IB2000/000694 patent/WO2000073543A1/en not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2016207A1 (en) * | 1968-08-22 | 1970-05-08 | Atomic Energy Authority Uk | |
EP0209257A1 (en) * | 1985-06-17 | 1987-01-21 | De Beers Industrial Diamond Division (Proprietary) Limited | Ion implantation |
EP0573312A2 (en) * | 1992-06-05 | 1993-12-08 | De Beers Industrial Diamond Division (Proprietary) Limited | Diamond doping |
EP0750058A2 (en) * | 1995-06-23 | 1996-12-27 | De Beers Industrial Diamond Division (Proprietary) Limited | Doping of crystalline substrates |
Non-Patent Citations (1)
Title |
---|
PRINS J F: "MATERIALS MODIFICATION: DOPING OF DIAMOND BY ION IMPLANTATION", MATERIALS SCIENCE AND ENGINEERING B,CH,ELSEVIER SEQUOIA, LAUSANNE, vol. B11, no. 1 / 04, 15 January 1992 (1992-01-15), pages 219 - 226, XP000361989, ISSN: 0921-5107 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1194619A1 (en) * | 1999-07-02 | 2002-04-10 | De Beers Industrial Diamonds (Proprietary) Limited | Doped diamond |
WO2006081348A1 (en) * | 2005-01-26 | 2006-08-03 | Apollo Diamond, Inc. | Gallium nitride light emitting devices on diamond |
US8129733B2 (en) | 2005-01-26 | 2012-03-06 | Apollo Diamond, Inc | Gallium nitride light emitting devices on diamond |
US8435833B2 (en) | 2005-01-26 | 2013-05-07 | Apollo Diamond, Inc. | Gallium nitride light emitting devices on diamond |
US8815708B2 (en) | 2006-07-28 | 2014-08-26 | Central Research Institute Of Electric Power Industry | Method for improving the quality of a SiC crystal |
Also Published As
Publication number | Publication date |
---|---|
AU4941900A (en) | 2000-12-18 |
EP1192299A1 (en) | 2002-04-03 |
JP2003500866A (en) | 2003-01-07 |
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