EP1187316B1 - Verfahren und Steuerungsschaltung zur Verwendung eines Leistungsverstärkers in Heteroübergangs-Bipolartransistortechnik in einem Sender in einer Architektur mit Null Hertz Zwischenfrequenz - Google Patents

Verfahren und Steuerungsschaltung zur Verwendung eines Leistungsverstärkers in Heteroübergangs-Bipolartransistortechnik in einem Sender in einer Architektur mit Null Hertz Zwischenfrequenz Download PDF

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Publication number
EP1187316B1
EP1187316B1 EP01402026A EP01402026A EP1187316B1 EP 1187316 B1 EP1187316 B1 EP 1187316B1 EP 01402026 A EP01402026 A EP 01402026A EP 01402026 A EP01402026 A EP 01402026A EP 1187316 B1 EP1187316 B1 EP 1187316B1
Authority
EP
European Patent Office
Prior art keywords
power
pout
power amplifier
pin
output power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP01402026A
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English (en)
French (fr)
Other versions
EP1187316A1 (de
Inventor
Franck Greverie
Luc Renard-D'arvil
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCT Mobile Ltd
Original Assignee
TCT Mobile Ltd
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Filing date
Publication date
Application filed by TCT Mobile Ltd filed Critical TCT Mobile Ltd
Publication of EP1187316A1 publication Critical patent/EP1187316A1/de
Application granted granted Critical
Publication of EP1187316B1 publication Critical patent/EP1187316B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers

Definitions

  • the present invention relates to controlling the amplification of the signal transmitted by a mobile radio terminal, and more particularly in the context of the use of HBT transistor power amplifiers.
  • the signal transmitted by a terminal such as a mobile phone must be amplified.
  • the terminals have a power amplifier receiving an input power and emitting an amplified output power, the amplification depending on the control voltage supplying the amplifier.
  • the document EP-A-1 014 570 describes different control circuits of such a power amplifier.
  • HBT Heterojunction Bipolar Transistor or heterojunction bipolar transistor
  • HBT transistors in a power amplifier is described in particular in the documents WO 99/17444 and US 5, 878, 332 .
  • the transmission architecture adopted by the mobile terminal manufacturers is an architecture where the intermediate frequency is zero.
  • amplification-related amplitude conversion or AM / AM conversion
  • the degradation of the spectrum related to the AM / AM conversion phenomenon is critical in a zero intermediate frequency architecture.
  • the present invention aims to overcome these disadvantages by providing a method and a circuit for using a power amplifier using HBT transistors in a zero intermediate frequency transmission architecture, while reducing damage observable at the spectrum level.
  • the subject of the invention is a control method as defined by claim 1
  • the invention also relates to a transmitter in zero intermediate frequency architecture as defined by claim 2.
  • the means for adjusting the power input level of the power amplifier comprise a controllable attenuator.
  • control circuit comprises variable gain preamplifier.
  • the invention also relates to a radiocommunication terminal comprising a power control circuit according to the invention.
  • the figure 1 is a diagram representing the output power Pout of a power amplifier according to its Pin input power.
  • the diagram of the figure 1 shows different curves corresponding to the evolution of the output power Pout as a function of the input power Pin for different values of the control voltage Vc (Vc 1 to Vc 4 , in descending order) supplying the amplifier of power.
  • the output power Pout of a power amplifier is adjusted by adjusting the control voltage Vc for a constant input power Pin.
  • a power preamplifier supplies a constant input power Pin to a power amplifier delivering an output power Pout.
  • the level of the output power Pout is thus adjusted, with constant input power Pin, through the control voltage Vc.
  • the diagram of the figure 1 has a first zone A corresponding to a linear operation of the power amplifier, and a second zone B corresponding to a non-linear operation of said power amplifier.
  • the working area commonly used in the field of mobile radio is around the Pin 1 input power represented figure 1 .
  • the optimal performance of the power amplifier is obtained in this area, where its operation is non-linear.
  • the method according to the invention in this case provides a modification of the input power Pin when the output power Pout necessary becomes too low.
  • the control voltage Vc passes, for an equivalent output power Pout4, from the value Vc 4 to the value Vc 1 which is markedly higher.
  • the power amplifier then operates in linear mode which, given the low level of power output, is not detrimental to performance.
  • the figure 2 is a schematic representation of a circuit adapted to implement the method of the invention.
  • Said circuit comprises a power amplifier 1 receiving an input power Pin and emitting an amplified output power Pout in the direction of an antenna 2 transmitting the radio signals of the terminal.
  • the input power Pin comes from a preamplifier 3 itself receiving upstream input power P1, from a circuit known in itself and not shown.
  • the power preamplifier 3 delivers a power P2 which, after passing through a filter 4 also known in itself, becomes the input power Pin feeding the power amplifier 1.
  • the device also comprises a control loop of the power amplifier 1 comprising means 5 for detecting the output power Pout and adjusting the control voltage Vc of the power amplifier 1.
  • the circuit comprises means 6 for adjusting the input power Pin of the power amplifier 1.
  • Said means 6, by acting directly on the power preamplifier 3, are able in fact to lower the output power P2 and thus the input power Pin according to the output power level Pout required.
  • the power preamplifier 3 may be, for example, a variable gain power preamplifier.
  • the means 6 for controlling and adjusting the input power Pin may also comprise a controllable attenuator so as to adjust the input power P1 of the power preamplifier 3.
  • the term controllable attenuator an attenuator controlled in voltage and current to give it a variable value.
  • the device continues to operate according to the method described in connection with the prior art.
  • the level of this output power Pout is controlled only by means 5 adapted to adjust the control voltage Vc.
  • the autonomy of the radiocommunication terminal equipped with such a device and operating according to the method of the invention is greatly increased, said autonomy being in direct relationship with the bias of the power amplifier 1 of the terminal.

Landscapes

  • Amplifiers (AREA)
  • Transmitters (AREA)
  • Control Of Amplification And Gain Control (AREA)

Claims (5)

  1. Verfahren zur Steuerung der Leistung eines Leistungsverstärkers (1) in Heteroübergangs-Bipolartransistortechnik mit einer Eingangsleistung (Pin) und einer verstärkten Ausgangsleistung (Pout) in einer Architektur mit Null Hertz Zwischenfrequenz, das einen Schritt der Erfassung der Ausgangsleistung (Pout) und der Anpassung der Steuerspannung (Vc) des Leistungsverstärkers (1) besitzt, und zwar durch einen Steuerkreis, der Erfassungseinrichtungen (5) für die Ausgangsleistung und die Anpassung der Steuerspannung besitzt, dadurch gekennzeichnet, dass die Steuerspannung (Vc) allein durch die Einrichtungen (5) für eine konstante Eingangsleistung angepasst wird, solange die festgestellte Ausgangsleistung (Pout) höher ist als ein vorher festgelegter Grenzwert, und dass das Verfahren einen Anpassungsschritt der Höhe der Eingangsleistung besitzt, der darin besteht, die Eingangsleistung (Pin) so zu reduzieren, dass die Steuerspannung erhöht wird, wenn die festgestellte Ausgangsleistung (Pout) unter dem vorher festgelegten Grenzwert liegt.
  2. Sender in einer Architektur mit Null Hertz Zwischenfrequenz mit einem Leistungsverstärker in Heteroübergangs-Bipolartransistortechnik (1) mit einer Eingangsleistung (Pin) und einer verstärkten Ausgangsleistung (Pout) und einer Steuerungsschaltung für die Leistung, die von dem Leistungsverstärker ausgesendet wird, welche einen Steuerkreis besitzt, der Erfassungseinrichtungen (5) für die Ausgangsleistung (Pout) und die Anpassung der Steuerspannung (Vc) des Leistungsverstärkers (1) besitzt, dadurch gekennzeichnet, dass die Steuerschaltung Anpassungseinrichtungen (6) für die Höhe der Eingangsleistung (Pin) des Leistungsverstärkers (1) besitzt, mit denen die Eingangsleistung (Pin) derart gesenkt wird, dass sich die Steuerspannung erhöht, wenn die festgestellte Ausgangsleistung (Pout) unter einem vorher festgelegten Grenzwert liegt.
  3. Sender nach Anspruch 2, dadurch gekennzeichnet, dass die Steuerungsschaltung einen Vorverstärker (3) mit variabler Verstärkung besitzt.
  4. Sender nach einem der Ansprüche 2 bis 4, dadurch gekennzeichnet, dass die Einrichtungen (6) zur Anpassung der Höhe der Eingangsleistung (Pin) des Leistungsverstärkers ein steuerbares Dämpfungsglied besitzen.
  5. Funkendgerät, dadurch gekennzeichnet, dass es einen Sender nach einem der Ansprüche 2 bis 4 besitzt.
EP01402026A 2000-08-31 2001-07-26 Verfahren und Steuerungsschaltung zur Verwendung eines Leistungsverstärkers in Heteroübergangs-Bipolartransistortechnik in einem Sender in einer Architektur mit Null Hertz Zwischenfrequenz Expired - Lifetime EP1187316B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0011117A FR2813457B1 (fr) 2000-08-31 2000-08-31 Procede et circuit de controle permettant l'utilisation d'un amplificateur de puissance en technologie hbt dans un emetteur en architecture a frequence intermediaire nulle
FR0011117 2000-08-31

Publications (2)

Publication Number Publication Date
EP1187316A1 EP1187316A1 (de) 2002-03-13
EP1187316B1 true EP1187316B1 (de) 2008-06-25

Family

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Application Number Title Priority Date Filing Date
EP01402026A Expired - Lifetime EP1187316B1 (de) 2000-08-31 2001-07-26 Verfahren und Steuerungsschaltung zur Verwendung eines Leistungsverstärkers in Heteroübergangs-Bipolartransistortechnik in einem Sender in einer Architektur mit Null Hertz Zwischenfrequenz

Country Status (9)

Country Link
US (1) US7076218B2 (de)
EP (1) EP1187316B1 (de)
JP (1) JP4722342B2 (de)
CN (1) CN1191676C (de)
AT (1) ATE399392T1 (de)
DE (1) DE60134515D1 (de)
ES (1) ES2309041T3 (de)
FR (1) FR2813457B1 (de)
PT (1) PT1187316E (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7738849B2 (en) * 2005-10-14 2010-06-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Output impedance insensitive power amplifier architecture
US20090146784A1 (en) * 2007-12-10 2009-06-11 Mohammad Soleimani Method and System for Variable Power Amplifier Bias in RFID Transceivers
IL188884A (en) 2008-01-20 2010-11-30 Ilya Rabinovich Star-delta many levels starter for an ac induction motor
US7768353B2 (en) 2008-06-13 2010-08-03 Samsung Electro-Mechanics Company, Ltd. Systems and methods for switching mode power amplifier control

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2826003B2 (ja) * 1991-11-29 1998-11-18 松下電器産業株式会社 送信出力制御回路
FR2702053B1 (fr) * 1993-02-23 1995-04-07 Thomson Csf Dispositif à grande linéarité de limitation d'une caractéristique d'un signal, et utilisation du dispositif dans une chaîne de réception radar.
JPH07143056A (ja) * 1993-09-24 1995-06-02 Hitachi Ltd 移動体通信装置
US5878332A (en) * 1997-02-07 1999-03-02 Eic Enterprises Corporation Multiple frequency RF transceiver
JPH10242770A (ja) * 1997-02-28 1998-09-11 Akita Denshi Kk 増幅回路の制御方法、増幅回路、増幅回路モジュール、携帯電話機
US6236271B1 (en) * 1997-09-30 2001-05-22 Conexant Systems, Inc. Multi-layer carrier module for power amplifier systems within a digital cellular telephone
JP3169002B2 (ja) * 1998-12-18 2001-05-21 日本電気株式会社 送信出力制御回路
US6230001B1 (en) * 1999-05-27 2001-05-08 Rockwell Collins, Inc. Active commutated double balanced mixer
JP3605314B2 (ja) * 1999-05-31 2004-12-22 松下電器産業株式会社 携帯電話端末装置

Also Published As

Publication number Publication date
DE60134515D1 (de) 2008-08-07
US7076218B2 (en) 2006-07-11
ES2309041T3 (es) 2008-12-16
CN1191676C (zh) 2005-03-02
JP2002171177A (ja) 2002-06-14
US20020028664A1 (en) 2002-03-07
FR2813457A1 (fr) 2002-03-01
FR2813457B1 (fr) 2003-01-31
PT1187316E (pt) 2008-09-29
EP1187316A1 (de) 2002-03-13
JP4722342B2 (ja) 2011-07-13
ATE399392T1 (de) 2008-07-15
CN1340912A (zh) 2002-03-20

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