EP1186041A2 - Low-inductance semiconductor component - Google Patents

Low-inductance semiconductor component

Info

Publication number
EP1186041A2
EP1186041A2 EP00934918A EP00934918A EP1186041A2 EP 1186041 A2 EP1186041 A2 EP 1186041A2 EP 00934918 A EP00934918 A EP 00934918A EP 00934918 A EP00934918 A EP 00934918A EP 1186041 A2 EP1186041 A2 EP 1186041A2
Authority
EP
European Patent Office
Prior art keywords
load current
semiconductor component
switching elements
elements
supply potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00934918A
Other languages
German (de)
French (fr)
Inventor
Martin Hierholzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
EUPEC GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EUPEC GmbH filed Critical EUPEC GmbH
Publication of EP1186041A2 publication Critical patent/EP1186041A2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/02—Arrangements of circuit components or wiring on supporting structure
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/4805—Shape
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01006—Carbon [C]
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    • H01L2924/01023—Vanadium [V]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

Definitions

  • the invention relates to a semiconductor component consisting of a housing, a carrier plate, at least one ceramic substrate, which is provided with a metallization at least on its upper side.
  • the semiconductor component also has at least two switching elements which are arranged on the upper side of the ceramic substrate in an electrically conductive manner and each have a load current connection and a control connection.
  • the load current connection elements can have a first or a second supply potential.
  • Such semiconductor components are used, for example, in motor vehicles between at least one battery-based low-voltage electrical system on the one hand and a starter generator as a starter or charging device for the respective battery on the other hand. They are used in overrun operation of the motor vehicle to adapt the voltage and power of the starter generator, which then functions as a generator, to the corresponding operating data of the respective battery to be recharged and when the starter generator, which then operates as a motor, is started with the aid of the respective battery to ensure a sufficient start Torque with a correspondingly high starting current.
  • the essential components of such a circuit arrangement include in particular a number of semiconductor half bridges as power components, a number of intermediate circuit components, in particular capacitors, and a number of control elements, in particular driver stages.
  • Such a thing Semiconductor component is known for example from DE 196 45 636 Cl, which is used to control an electric motor.
  • MOSFETs switching elements. These are switched on or off by a control voltage applied between the source contact and the gate contact.
  • the control voltage is placed between the source connection and the gate connection.
  • the wire leading to the source contact has a self-inductance, which has the effect that the load current, which changes over time when the MOSFET is switched on or off, induces a voltage in the inductance which counteracts the control voltage with a switching delay. If you connect several MOSFETs in parallel and control them together from a single voltage source, the above-mentioned inductance leads to tolerances of high-frequency vibrations with amplitudes occurring in the control circuit due to unavoidable components, which can destroy the MOSFET.
  • EP 0 265 833 B1 proposes arranging the conductor tracks which are connected to the source terminals on one side of the MOSFET and the conductor tracks for the control on the other side of the MOSFET. This results in an extensive magnetic decoupling of the control circuit from the source connections of the semiconductor component.
  • the object of the present invention is therefore to provide a semiconductor component which does not have the disadvantageous effect of the leakage inductances and which can be produced in a simple manner.
  • At least one ceramic substrate which is metallized at least on its upper side
  • At least two switching elements which are arranged on the top of the ceramic substrate in an electrically conductive manner and each have load current connections and a control connection,
  • the load current connection elements being able to have a first or a second supply potential
  • the load current connection elements located on one housing side and assigned to two adjacent switching elements are acted upon with the first or with the second supply potential.
  • the load current connection elements of which on one side of the housing have a different polarity.
  • the advantages of the invention can be achieved with any even number of switching elements.
  • the large number of even-numbered switching elements are advantageously arranged next to one another on an alignment line.
  • the feeds between the load current connection elements and the load current connections of the switching elements arranged next to one another advantageously run approximately orthogonally to the alignment line mentioned.
  • the assigned load current connection elements then alternately have the first and the second supply potential.
  • a very compact structure of the semiconductor component can be achieved in this way. There is only a small area for suitable conductor tracks or for the Feeds are provided, which enables an inexpensive construction.
  • a switching element preferably consists of two series-connected semiconductor switches, the connection point of which is connected to a load current connection element and forms an output of the semiconductor component.
  • the two series-connected semiconductor switches are preferably arranged on an approximately orthogonal alignment line to the first or the second side. As is known, a half bridge is hereby formed.
  • the plurality or part of the plurality of switching elements or half bridges are connected in parallel by means of the metalization and / or bonding wires in order to increase the current carrying capacity of the semiconductor component. This enables use in high performance ranges.
  • MOSFETs or IGBTs are preferably used as switching elements. Basically, any controllable semiconductor switch can be used.
  • the invention is preferably used to control a phase of a 3-phase inverter module.
  • the semiconductor component then represents a very low-inductance half-bridge.
  • the invention is illustrated by the single figure.
  • the semiconductor component 1 shows this in a plan view.
  • This has a housing 2 which is connected to a carrier plate 3.
  • Three ceramic substrates 4, which are arranged towards the interior of the housing, are applied to the carrier plate 3 by way of example. A single ceramic substrate could also be used.
  • Each of the ceramic substrates 4 is provided with a metallization 5 (not shown), on which an even number of switching elements 6 are applied.
  • the left and the middle ceramic substrate 4 each have four switching elements 6.
  • Each switching element 6 consists of two semiconductor switches 17, 17 ⁇ . These are arranged on an alignment line, which are arranged approximately orthogonally to the two long sides 13, 14 of the housing 2.
  • Semiconductor switches 17, 17 ⁇ can for example be designed as a MOSFET or as an IGBT.
  • Each of the two semiconductor switches 17, 17 is connected to the metallization 5 via bonding wires 16. Furthermore, each semiconductor switch 17, 17 ⁇ is connected to a load current connection element 10 via a feed 9.
  • the feed 9 can for example be designed as a bond wire or as a single wire.
  • the feeder 9 is arranged approximately in the line of alignment of the two semiconductor switches 17, 17 ⁇ .
  • the load current connection elements 10 are fastened in the present figure in so-called guide elements 15 on the inside of the housing.
  • This mechanical design merely represents a variant of how the switching elements 6 can be contacted to the outside via the feeds 9. Any other variant is of course conceivable.
  • the uppermost left load current connection element 10 is connected to a first supply potential, which could be the ground potential, for example.
  • the load current connection element 10 which is adjacent to it on the right, has a second supply potential 12 applied to it.
  • This load current connection element is assigned to a second switching element 6.
  • the load current connection elements 10 are alternately acted upon on the first side 13 of the housing 2 by the first supply potential 11 and the second supply potential 12 (from left to right).
  • the load current connection elements 10 are alternately acted upon first with the second 12, then with the first supply potential 11.
  • the inductance can be reduced with the semiconductor component according to the invention from 50 nH to 5 nH.
  • the semiconductor switches 17, 17 are MOSFETs.
  • the source contact of the MOSFET 17, 17 ⁇ is arranged on the top, while the drain contact is on the back and is electrically and mechanically connected to the metallization.
  • the following load current path then results from the top to the bottom of the switching element 6 arranged on the far left: first supply potential 11 at the load current connection element 10 - supply 9 ⁇ - source of the semiconductor switch 17 ⁇ (top of the semiconductor switch) - drain of the semiconductor switch 17 (bottom of the semiconductor switch) - metallization 5 - Bonding wire 16 - Source contact of the semiconductor switch 17 (top of the semiconductor switch) - Drain contact of the semiconductor switch 17 (bottom of the semiconductor switch) - Metallization - Feed 9 - Load current connection element 10, connected to the second supply potential.
  • Load current connection element 10 connected to the first supply potential (reference potential).
  • capacitors can also be arranged, for example, to further reduce overvoltages. Compared to the prior art, these capacitors can, however, be dimensioned considerably smaller and therefore more cost-effectively. It is also conceivable to accommodate the control for the semiconductor switches 17, 17 ⁇ on the ceramic substrate 4 arranged on the right. However, this could also be outside the semiconductor component.
  • the semiconductor component according to the invention represents a half-bridge in the manner described.
  • a 3-phase inverter module can then be controlled. This can advantageously be used in a motor vehicle and, for example, control a three-phase motor, which replaces both an alternator and a starter. It can be used on both 12 V and 42 V electrical systems.
  • the invention can be used expediently in all applications which have high current steepness.
  • use in converter technology would be conceivable.

Abstract

The invention relates to a semiconductor component comprising a housing, a substrate board, at least one ceramic substrate which at least on its upper surface is provided with a metallization (10), and at least two switching elements. The switching elements are mounted on the upper surface of the ceramic substrate in an electrically conductive manner and each have load-current connections and a control connection. According to the invention the semiconductor component comprises several external load-current connecting elements which are positioned on one side of said component as well as on a second side which is opposite the first. The load-current connections of the switching elements are electrically connected via supply wires to the external load-current connecting elements which can present a first and a second supply potential. Two switching elements each are arranged next to each other in such a way that the corresponding supply wires extend substantially parallel to two load-current connecting elements which are assigned to same and present different polarities. This results in compensation of the magnetic fields.

Description

Beschreibung description
Niederinduktives HalbleiterbauelementLow-inductance semiconductor component
Die Erfindung betrifft ein Halbleiterbauelement bestehend aus einem Gehäuse, einer Trägerplatte, zumindest einem Kera- miksubstrat, das zumindest an seiner Oberseite mit einer Metallisierung versehen ist. Das Halbleiterbauelement weist ferner zumindest zwei Schaltelemente auf, die auf der Ober- seite des Keramiksubstrats elektrisch leitend angeordnet sind und jeweils über Laststromanschlusse und einen Steueranschluß verfügen. Es sind weiterhin Laststromanschlußelemente auf einer ersten Seite und einer zweiten, der ersten gegenüberliegenden Seite vorgesehen, die mit den Laststromanschlüssen der Schaltelemente über Zuführungen elektrisch verbunden sind. Die Laststromanschlußelemente können dabei ein erstes oder ein zweites Versorgungspotential aufweisen.The invention relates to a semiconductor component consisting of a housing, a carrier plate, at least one ceramic substrate, which is provided with a metallization at least on its upper side. The semiconductor component also has at least two switching elements which are arranged on the upper side of the ceramic substrate in an electrically conductive manner and each have a load current connection and a control connection. There are also load current connection elements on a first side and a second side opposite the first side, which are electrically connected to the load current connections of the switching elements via leads. The load current connection elements can have a first or a second supply potential.
Derartige Halbleiterbauelemente werden beispielsweise in Kraftfahrzeugen zwischen zumindest einem batteriegestützten Niederspannungs-Bordnetz einerseits und einem Starter- Generator als Anlasser bzw. Ladevorrichtung für die jeweilige Batterie andererseits eingesetzt. Sie dienen im Schubbetrieb des Kraftfahrzeuges zur Anpassung von Spannung und Leistung des dann als Generator arbeitenden Starter-Generators an die entsprechenden Betriebsdaten der jeweiligen nachzuladenden Batterie und beim Starten des dann als Motor arbeitenden Starter-Generators mit Hilfe der jeweiligen Batterie zur Gewährleistung eines hinreichenden Start-Drehmomentes mit ent- sprechend hohem Anfahrstrom.Such semiconductor components are used, for example, in motor vehicles between at least one battery-based low-voltage electrical system on the one hand and a starter generator as a starter or charging device for the respective battery on the other hand. They are used in overrun operation of the motor vehicle to adapt the voltage and power of the starter generator, which then functions as a generator, to the corresponding operating data of the respective battery to be recharged and when the starter generator, which then operates as a motor, is started with the aid of the respective battery to ensure a sufficient start Torque with a correspondingly high starting current.
Als wesentliche Bauteile einer solchen Schaltungsanordnung gelten insbesondere eine Anzahl von Halbleiter-Halbbrücken als Leistungsbauteile, eine Anzahl von Zwischenkreis- Bauelementen, insbesondere Kondensatoren, und eine Anzahl von Steuerelementen, insbesondere Treiberstufen. Ein derartiges Halbleiterbauelement ist beispielsweise aus der DE 196 45 636 Cl bekannt, das zur Ansteuerung eines Elektromotors dient.The essential components of such a circuit arrangement include in particular a number of semiconductor half bridges as power components, a number of intermediate circuit components, in particular capacitors, and a number of control elements, in particular driver stages. Such a thing Semiconductor component is known for example from DE 196 45 636 Cl, which is used to control an electric motor.
Als Schaltelemente weisen die beschriebenen Halbleiterbauele- ente vielfach MOSFETs auf. Diese werden durch eine zwischen den Sourcekontakt und den Gatekontakt angelegte Steuerspannung leitend bzw. sperrend geschaltet. In der Praxis wird die Steuerspannung zwischen den Sourceanschluß und den Gatean- schluß gelegt. Der zum Sourcekontakt führende Draht hat eine Eigeninduktivität, die bewirkt, daß der sich beim Ein- oder Ausschalten des MOSFETs zeitlich ändernde Laststrom eine Spannung in der Induktivität induziert, die der Steuerspannung schaltverzögernd entgegenwirkt. Schaltet man mehrere MOSFET parallel und steuert sie gemeinsam aus einer einzigen Spannungsquelle an, so führt die erwähnte Induktivität dazu, daß im Ansteuerkreis wegen unvermeidlicher Bauelemente Toleranzen hochfrequente Schwingungen mit Amplituden auftreten, die den MOSFET zerstören können. Die Schwingfrequenz wird maßgeblich durch die Induktivität des Sourceanschlusses und daneben durch andere parasitäre Netzwerk- und Bauelementeparameter bestimmt. Zur Verringerung der Nachteile der Wirkung der Induktivität des Sourceanschlusses wird in der EP 0 265 833 Bl vorgeschlagen, die Leiterbahnen, die mit den Sourceanschlüssen verbunden werden auf der einen Seite des MOSFETs und die Leiterbahnen für die Ansteuerung auf der anderen Seite des MOSFETs anzuordnen. Hierdurch ergibt sich eine weitgehende magnetische Entkopplung des Ansteuerkreises von den Sourceanschlüssen des Halbleiterbauelements.The semiconductor components described often have MOSFETs as switching elements. These are switched on or off by a control voltage applied between the source contact and the gate contact. In practice, the control voltage is placed between the source connection and the gate connection. The wire leading to the source contact has a self-inductance, which has the effect that the load current, which changes over time when the MOSFET is switched on or off, induces a voltage in the inductance which counteracts the control voltage with a switching delay. If you connect several MOSFETs in parallel and control them together from a single voltage source, the above-mentioned inductance leads to tolerances of high-frequency vibrations with amplitudes occurring in the control circuit due to unavoidable components, which can destroy the MOSFET. The oscillation frequency is largely determined by the inductance of the source connection and also by other parasitic network and component parameters. To reduce the disadvantages of the effect of the inductance of the source connection, EP 0 265 833 B1 proposes arranging the conductor tracks which are connected to the source terminals on one side of the MOSFET and the conductor tracks for the control on the other side of the MOSFET. This results in an extensive magnetic decoupling of the control circuit from the source connections of the semiconductor component.
Es sind folglich überwiegend die Streuinduktivitäten in den Zuführungen zu den Laststromanschlüssen eines oder mehrerer Halbleiterschalter, die insbesondere bei sehr hohen Stromsteilheiten (dl/dt) Probleme, d.h. Überspannungen bereiten. Zur Kompensation dieser Überspannungen sind deshalb große Kondensatoren sowie Widerstände notwendig. Diese können jedoch das Schaltverhalten des Halbleiterbauelementes nachteilig beeinflussen. Um diesen Nachteilen zu entgehen, versucht man in der Praxis durch geschickte, d.h. kurze Leiterbahnführung die Induktivitäten in den Zuführungen zu verringern.It is therefore predominantly the leakage inductances in the feeds to the load current connections of one or more semiconductor switches that cause problems, ie overvoltages, in particular in the case of very high current steepness (dl / dt). Large capacitors and resistors are therefore necessary to compensate for these overvoltages. However, these can adversely affect the switching behavior of the semiconductor component. To avoid these disadvantages, try In practice, the inductances in the feed lines are reduced by skillful, ie short, routing of the conductor tracks.
Die Aufgabe der vorliegenden Erfindung besteht deshalb darin, ein Halbleiterbauelement anzugeben, das die nachteilige Wirkung der Streuinduktivitäten nicht aufweist und auf einfache Weise herzustellen ist.The object of the present invention is therefore to provide a semiconductor component which does not have the disadvantageous effect of the leakage inductances and which can be produced in a simple manner.
Diese Aufgabe wird gelöst durch ein Halbleiterbauelement, das folgende Merkmale aufweist:This problem is solved by a semiconductor component which has the following features:
- ein Gehäuse,- a housing,
- ein Trägerplatte,- a carrier plate,
- zumindest ein Keramiksubstrat, das zumindest an seiner Oberseite mit einer Metallisierung versehen ist,at least one ceramic substrate which is metallized at least on its upper side,
- zumindest zwei Schaltelemente, die auf der Oberseite des Keramiksubstrats elektrisch leitend angeordnet sind und jeweils über Laststromanschlusse und einen Steueranschluß verfügen,at least two switching elements which are arranged on the top of the ceramic substrate in an electrically conductive manner and each have load current connections and a control connection,
- mehrere externe Laststromanschlußelemente auf einer ersten Seite und auf einer zweiten, der ersten gegenüberliegenden- Several external load current connection elements on a first side and on a second, the first opposite
Seite des Gehäuses, die mit den Laststromanschlüssen der Schaltelemente über Zuführungen elektrisch verbunden sind, wobei die Laststromanschlußelemente ein erstes oder ein zweites Versorgungspotential aufweisen können,Side of the housing which is electrically connected to the load current connections of the switching elements via feed lines, the load current connection elements being able to have a first or a second supply potential,
wobei jeweils zwei Schaltelemente derart benachbart angeordnet sind, daß sich die jeweiligen Zuführungen parallel zu zwei zugeordneten Laststromanschlußelementen hin erstrecken und benachbarte Laststromanschlußelemente eine unterschiedli- ehe Polarität aufweisen. Mit anderen Worten ausgedrückt heißt das, daß die Zuführungen zweier benachbarter Schaltelemente so angeordnet sind, daß sich entstehende Magnetfelder in den Zuführungen durch die entgegengesetzte Polarität an den Laststromanschlußelementen kompensieren und dadurch die wirksame Induktivität minimiert wird.wherein two switching elements are arranged adjacent to each other such that the respective feed lines extend parallel to two assigned load current connection elements and adjacent load current connection elements have a different polarity. In other words, this means that the feeds of two adjacent switching elements are arranged in such a way that magnetic fields that arise in the feeds are compensated for by the opposite polarity at the load current connection elements and the effective inductance is thereby minimized.
Vorteilhafte Ausgestaltungen ergeben sich aus den Unteransprüchen.Advantageous refinements result from the subclaims.
Es ist ferner vorgesehen, ein Schaltelement mit zwei Zuführungen zu verbinden, wobei sich die Zuführungen zwischen der ersten und der zweiten Seite des Gehäuses erstrecken und wobei die eine Zuführung das erste Versorgungspotential und die andere Zuführung das zweite Versorgungspotential aufweist.It is also provided to connect a switching element to two leads, the leads extending between the first and the second side of the housing, and one lead having the first supply potential and the other lead having the second supply potential.
Es ist ferner vorgesehen, die auf einer Gehäuseseite befindlichen und zwei benachbarten Schaltelementen zugeordneten Laststromanschlußelemente mit dem ersten bzw. mit dem zweiten Versorgungspotential zu beaufschlagen. Zur Erzielung einer minimalen Streuinduktivität ist es folglich notwendig, zumindest zwei benachbarte Schaltelemente vorzusehen, deren auf einer Gehäuseseite benachbarte Laststromanschlußelemente eine unterschiedliche Polarität aufweisen. Die Vorteile der Erfin- düng lassen sich mit jeder geradzahligen Anzahl an Schaltelementen erzielen. Vorteilhafterweise werden die Vielzahl an geradzahligen Schaltelementen auf einer Fluchtlinie nebeneinander angeordnet. Die Zuführungen zwischen Laststromanschlußelementen und den Laststromanschlüssen der nebeneinan- der angeordneten Schaltelemente verlaufen vorteilhafterweise in etwa orthogonal zur genannten Fluchtlinie. Die zugeordneten Laststromanschlußelemente weisen dann alternierend das erste und das zweite Versorgungspotential auf. Neben der geringen Streuinduktivität läßt sich hierdurch ein sehr kompak- ter Aufbau des Halbleiterbauelementes erzielen. Es muß nur wenig Fläche für geeignete Leiterbahnführungen bzw. für die Zuführungen vorgesehen werden, was einen kostengünstigen Aufbau ermöglicht.It is further provided that the load current connection elements located on one housing side and assigned to two adjacent switching elements are acted upon with the first or with the second supply potential. In order to achieve a minimal leakage inductance, it is consequently necessary to provide at least two adjacent switching elements, the load current connection elements of which on one side of the housing have a different polarity. The advantages of the invention can be achieved with any even number of switching elements. The large number of even-numbered switching elements are advantageously arranged next to one another on an alignment line. The feeds between the load current connection elements and the load current connections of the switching elements arranged next to one another advantageously run approximately orthogonally to the alignment line mentioned. The assigned load current connection elements then alternately have the first and the second supply potential. In addition to the low leakage inductance, a very compact structure of the semiconductor component can be achieved in this way. There is only a small area for suitable conductor tracks or for the Feeds are provided, which enables an inexpensive construction.
Vorzugsweise besteht ein Schaltelement aus zwei seriell mit- einander verschalteten Halbleiterschaltern, deren Verbindungspunkt mit einem Laststromanschlußelement verbunden ist und einen Ausgang des Halbleiterbauelementes bildet. Die zwei seriell verschalteten Halbleiterschalter sind vorzugsweise auf einer zu der ersten bzw. der zweiten Seite in etwa ortho- gonalen Fluchtlinie angeordnet. Bekannterweise ist hierdurch eine Halbbrücke gebildet.A switching element preferably consists of two series-connected semiconductor switches, the connection point of which is connected to a load current connection element and forms an output of the semiconductor component. The two series-connected semiconductor switches are preferably arranged on an approximately orthogonal alignment line to the first or the second side. As is known, a half bridge is hereby formed.
Es ist weiterhin denkbar, daß die Vielzahl oder ein Teil der Vielzahl an Schaltelementen bzw. Halbbrücken mittels der Me- tallisierung und/oder Bonddrähten parallel geschalten sind zur Erhöhung der Stromtragfähigkeit des Halbleiterbauelementes. Hierdurch wird der Einsatz an hohen Leistungsbereichen möglich.It is also conceivable that the plurality or part of the plurality of switching elements or half bridges are connected in parallel by means of the metalization and / or bonding wires in order to increase the current carrying capacity of the semiconductor component. This enables use in high performance ranges.
Als Schaltelemente werden vorzugsweise MOSFETs oder IGBTs verwendet. Es ist jedoch im Grunde jeder beliebige steuerbare Halbleiterschalter verwendbar. Vorzugsweise wird die Erfindung zur Ansteuerung einer Phase eines 3-Phasen- Wechselrichter-Moduls verwendet. Das Halbleiterbauelement stellt dann eine sehr niederinduktive Halbbrücke dar.MOSFETs or IGBTs are preferably used as switching elements. Basically, any controllable semiconductor switch can be used. The invention is preferably used to control a phase of a 3-phase inverter module. The semiconductor component then represents a very low-inductance half-bridge.
Die Erfindung wird anhand der einzigen Figur näher erläutert.The invention is illustrated by the single figure.
Das erfindungsgemäße Halbleiterbauelement 1 nach der Figur zeigt dieses in einer Draufsicht. Dieses weist ein Gehäuse 2 auf, das mit einer Trägerplatte 3 verbunden ist. Auf der Trägerplatte 3 sind beispielhaft drei Keramiksubstrate 4 aufgebracht, die zum Gehäuseinneren hin angeordnet sind. Es könnte auch nur ein einziges Keramiksubstrat verwendet werden. Jedes der Keramiksubstrate 4 ist mit einer (nicht gezeigten) Metallisierung 5 versehen, auf welcher eine geradzahlige Anzahl an Schaltelementen 6 aufgebracht sind. In der vorliegenden Figur weisen das linke und das mittlere Keramiksubstrat 4 jeweils vier Schaltelemente 6 auf. Jedes Schaltelement 6 besteht aus zwei Halbleiterschaltern 17, 17 λ . Diese sind auf einer Fluchtlinie angeordnet, die in etwa orthogonal zu den beiden langen Seiten 13, 14 des Gehäuses 2 angeordnet sind. EinThe semiconductor component 1 according to the figure shows this in a plan view. This has a housing 2 which is connected to a carrier plate 3. Three ceramic substrates 4, which are arranged towards the interior of the housing, are applied to the carrier plate 3 by way of example. A single ceramic substrate could also be used. Each of the ceramic substrates 4 is provided with a metallization 5 (not shown), on which an even number of switching elements 6 are applied. In the present figure the left and the middle ceramic substrate 4 each have four switching elements 6. Each switching element 6 consists of two semiconductor switches 17, 17 λ . These are arranged on an alignment line, which are arranged approximately orthogonally to the two long sides 13, 14 of the housing 2. On
Halbleiterschalter 17, 17 Λ kann z.B. als MOSFET oder als IGBT ausgeführt sein.Semiconductor switches 17, 17 Λ can for example be designed as a MOSFET or as an IGBT.
Jeder der beiden Halbleiterschalter 17, 17 ist über Bond- drahte 16 mit der Metallisierung 5 verbunden. Ferner ist jeder Halbleiterschalter 17, 17 λ über eine Zuführung 9 mit einem Laststromanschlußelement 10 verbunden. Die Zuführung 9 kann beispielsweise als Bonddraht oder aber als Einzeldraht ausgeführt sein. Die Zuführung 9 ist annähernd in der Flucht- linie der beiden Halbleiterschalter 17, 17 λ angeordnet. Die Laststromanschlußelemente 10 sind in der vorliegenden Figur in sogenannten Führungselementen 15 an der Gehäuseinnenseite befestigt. Diese mechanische Ausführung stellt lediglich eine Variante dar, wie die Schaltelemente 6 über die Zuführungen 9 nach außen kontaktiert werden können. Es ist selbstverständlich jede andere Variante denkbar. Das oberste linke Laststromanschlußelement 10 ist mit einem ersten Versorgungspotential, welches z.B. das Massepotential sein könnte, verbunden. Das davon rechts benachbarte LastStromanschlußelement 10 ist hingegen mit einem zweiten Versorgungspotential 12 beaufschlagt. Dieses Laststromanschlußelement ist einem zweiten Schaltelement 6 zugeordnet. Wie in der Figur angedeutet, sind die Laststromanschlußelemente 10 auf der ersten Seite 13 des Gehäuses 2 alternierend mit dem ersten Versorgungspotential 11 und dem zweiten Versorgungspotential 12 beaufschlagt (von links nach rechts) . Auf der zweiten Seite 14 sind die Laststromanschlußelemente 10 (von links nach rechts) zuerst mit dem zweiten 12, dann mit dem ersten Versorgungspotential 11 alternierend beaufschlagt. Gegenüber dem Stand der Technik läßt sich die Induktivität mit dem erfindungsgemäßen Halbleiterbauelement von 50 nH auf 5 nH reduzieren. Beispielhaft wird im folgenden angenommen, daß es sich bei den Halbleiterschaltern 17, 17 um MOSFETs handelt. Der Sourcekontakt des MOSFETs 17, 17 λ ist auf der Oberseite angeordnet, während sich der Drainkontakt auf der Rückseite befindet und mit der Metallisierung elektrisch und mechanisch steht. Dann ergibt sich folgender Laststrompfad bei dem ganz links angeordneten Schaltelement 6 von oben nach unten: Erstes Versorgungspotential 11 am Laststromanschlußelement 10 - Zuführung 9λ- Source des Halbleiterschalters 17 λ (Oberseite des Halbleiterschalters) - Drain des Halbleiterschalters 17 (Unterseite des Halbleiterschalters) - Metallisierung 5 - Bonddraht 16 - Sourcekontakt des Halbleiterschalters 17 (Oberseite des Halbleiterschalters) - Drainkontakt des Halbleiterschalters 17 (Unterseite des Halbleiterschalters) - Me- tallisierung - Zuführung 9 - Laststromanschlußelement 10, verbunden mit dem zweiten Versorgungspotential.Each of the two semiconductor switches 17, 17 is connected to the metallization 5 via bonding wires 16. Furthermore, each semiconductor switch 17, 17 λ is connected to a load current connection element 10 via a feed 9. The feed 9 can for example be designed as a bond wire or as a single wire. The feeder 9 is arranged approximately in the line of alignment of the two semiconductor switches 17, 17 λ . The load current connection elements 10 are fastened in the present figure in so-called guide elements 15 on the inside of the housing. This mechanical design merely represents a variant of how the switching elements 6 can be contacted to the outside via the feeds 9. Any other variant is of course conceivable. The uppermost left load current connection element 10 is connected to a first supply potential, which could be the ground potential, for example. The load current connection element 10, which is adjacent to it on the right, has a second supply potential 12 applied to it. This load current connection element is assigned to a second switching element 6. As indicated in the figure, the load current connection elements 10 are alternately acted upon on the first side 13 of the housing 2 by the first supply potential 11 and the second supply potential 12 (from left to right). On the second side 14, the load current connection elements 10 (from left to right) are alternately acted upon first with the second 12, then with the first supply potential 11. Compared to the prior art, the inductance can be reduced with the semiconductor component according to the invention from 50 nH to 5 nH. As an example, it is assumed below that the semiconductor switches 17, 17 are MOSFETs. The source contact of the MOSFET 17, 17 λ is arranged on the top, while the drain contact is on the back and is electrically and mechanically connected to the metallization. The following load current path then results from the top to the bottom of the switching element 6 arranged on the far left: first supply potential 11 at the load current connection element 10 - supply 9 λ - source of the semiconductor switch 17 λ (top of the semiconductor switch) - drain of the semiconductor switch 17 (bottom of the semiconductor switch) - metallization 5 - Bonding wire 16 - Source contact of the semiconductor switch 17 (top of the semiconductor switch) - Drain contact of the semiconductor switch 17 (bottom of the semiconductor switch) - Metallization - Feed 9 - Load current connection element 10, connected to the second supply potential.
Bei dem rechts daneben benachbarten Schaltelement 6 ergibt sich der Strompfad von oben nach unten in genau umgekehrter Reihenfolge:In the switching element 6 adjacent to the right, the current path results from top to bottom in exactly the opposite order:
Zweites Versorgungspotential 12 am Laststromanschlußelement 10 - Zuführung 9 - Drainkontakt des Halbleiterschalters 17 - Sourcekontakt des Halbleiterschalters 17 - Bondverbindung zur Metallisierung 5 - Drainkontakt des Halbleiterschalters 17 x - Sourcekontakt des Halbleiterschalters 17 λ - Zuführung 9 -Second supply potential 12 at the load current connection element 10 - supply 9 - drain contact of the semiconductor switch 17 - source contact of the semiconductor switch 17 - bond connection for metallization 5 - drain contact of the semiconductor switch 17 x - source contact of the semiconductor switch 17 λ - supply 9 -
Laststromanschlußelement 10, verbunden mit dem ersten Versorgungspotential (Bezugspotential) .Load current connection element 10, connected to the first supply potential (reference potential).
Im erstgenannten Fall ergibt sich dann ein von unten nach oben verlaufender Laststrom, während im zweitgenannten Fall der Laststrom von oben nach unten verläuft. Die durch den Stromfluß in den Zuführungen entstehenden Magnetfelder werden durch die entgegengesetzte Stromrichtung kompensiert. Hierdurch verringert sich die wirksame Induktivität.In the former case, there is a load current running from bottom to top, while in the latter case the load current runs from top to bottom. The magnetic fields created by the current flow in the feed lines are compensated for by the opposite current direction. This reduces the effective inductance.
Um die Stromtragfähigkeit zu erhöhen, ist es mittels der (nicht dargestellten) Metallisierung und/oder Bondverbindun- gen möglich, die in der Figur gezeigten acht Schaltelemente miteinander parallel zu verschalten. Bei Verwendung von identischen Halbleiterschaltern 17, 17 x in allen acht Schaltelementen 6 ergibt sich bei Parallelschaltung in allen Strompfa- den ein gleich großer Strom. Hierdurch wird eine ideale Kompensation des entstehenden Magnetfeldes ermöglicht. Auf die explizite Darstellung der Metallisierung bzw. der Verdrahtung der Ausgänge der Halbbrücke mit Laststromanschlußelementen wurde verzichtet, da diese nicht den Kernbestandteil der Er- findung bilden.In order to increase the current carrying capacity, it is by means of the metallization (not shown) and / or bond connections. gene possible to interconnect the eight switching elements shown in the figure in parallel. If identical semiconductor switches 17, 17 x are used in all eight switching elements 6, the current is the same in all current paths when connected in parallel. This enables ideal compensation of the magnetic field that arises. The metallization or the wiring of the outputs of the half-bridge with load current connection elements has not been explicitly shown, since these do not form the core component of the invention.
Auf dem rechts angeordneten Keramiksubstrat 4 in dem Gehäuse 2 können beispielsweise zur weiteren Verringerung von Überspannungen noch Kondensatoren angeordnet werden. Diese Kon- densatoren können gegenüber dem Stand der Technik jedoch wesentlich geringer und somit kostengünstiger dimensioniert werden. Ebenso ist es denkbar, auf dem rechts angeordneten Keramiksubstrat 4 die Ansteuerung für die Halbleiterschalter 17, 17 λ unterzubringen. Diese könnte sich jedoch auch außer- halb des Halbleiterbauelements befinden.On the ceramic substrate 4 arranged on the right in the housing 2, capacitors can also be arranged, for example, to further reduce overvoltages. Compared to the prior art, these capacitors can, however, be dimensioned considerably smaller and therefore more cost-effectively. It is also conceivable to accommodate the control for the semiconductor switches 17, 17 λ on the ceramic substrate 4 arranged on the right. However, this could also be outside the semiconductor component.
Das erfindungsgemäße Halbleiterbauelement stellt in der beschriebenen Weise eine Halbbrücke dar. Durch die Verwendung dreier baugleicher erfindungsgemäßer Halbleiterbauelemente kann dann ein 3-Phasen-Wechselrichter-Modul angesteuert werden. Dieses kann vorteilhafterweise in einem Kraftfahrzeug eingesetzt werden und beispielsweise einen Drehstrommotor ansteuern, der sowohl eine Lichtmaschine als auch einen Anlasser ersetzt. Es ist eine Verwendung sowohl an 12 V als auch an 42 V Bordnetzen möglich.The semiconductor component according to the invention represents a half-bridge in the manner described. By using three identical semiconductor components according to the invention, a 3-phase inverter module can then be controlled. This can advantageously be used in a motor vehicle and, for example, control a three-phase motor, which replaces both an alternator and a starter. It can be used on both 12 V and 42 V electrical systems.
Die Erfindung kann bei allen Anwendungen, die hohe Stromsteilheiten aufweisen, sinnvoll eingesetzt werden. Beispielsweise wäre ein Einsatz in der Umrichtertechnik denkbar. The invention can be used expediently in all applications which have high current steepness. For example, use in converter technology would be conceivable.

Claims

Patentansprüche claims
1. Halbleiterbauelement (1) bestehend aus1. Semiconductor component (1) consisting of
- einem Gehäuse (2), - einer Trägerplatte (3) ,- a housing (2), - a carrier plate (3),
- zumindest einem Keramiksubstrat (4), das zumindest an seiner Oberseite mit einer Metallisierung (5) versehen ist,- at least one ceramic substrate (4) which is provided with a metallization (5) at least on its upper side,
- zumindest zwei Schaltelementen (6), die auf der Oberseite des Keramiksubstrats (4) elektrisch leitend angeordnet sind und jeweils über Laststromanschlusse (7) und einen Steueranschluß (8) verfügen,at least two switching elements (6) which are arranged on the top of the ceramic substrate (4) in an electrically conductive manner and each have load current connections (7) and a control connection (8),
- mehreren externen Laststromanschlußelementen (10) auf einer ersten Seite 13 und einer zweiten (14), der ersten (13), gegenüberliegenden Seite des Gehäuses (2), die mit den Last- Stromanschlüssen der Schaltelemente über Zuführungen (9) elektrisch verbunden sind, wobei die Laststromanschlußelemente (10) ein erstes oder ein zweites Versorgungspotential (11, 12) aufweisen können, wobei jeweils zwei Schaltelemente (6) benachbart angeordnet sind, daß sich die jeweiligen Zuführungen (9, 9Λ) annähernd parallel zu zwei zugeordneten Laststromanschlußelementen (10) hin erstrecken und benachbarte Laststromanschlußelemente unterschiedliche Polarität aufweisen.a plurality of external load current connection elements (10) on a first side 13 and a second (14), the first (13), opposite side of the housing (2), which are electrically connected to the load current connections of the switching elements via leads (9), wherein the load current connection elements (10) can have a first or a second supply potential (11, 12), whereby two switching elements (6) are arranged adjacent each other so that the respective leads (9, 9 Λ ) are approximately parallel to two assigned load current connection elements (10 ) extend and neighboring load current connection elements have different polarity.
2. Halbleiterbauelement nach Anspruch 1, wobei ein Schaltelement (6) mit zwei Zuführungen (9) verbunden ist, die sich zwischen der ersten und der zweiten Seite (13, 14) des Gehäuses verstrecken, und wobei die eine Zuführung (9) das erste Versorgungspotential (11) und die andere Zuführung (9 ) das zweite Versorgungspotential (12) aufweist.2. The semiconductor component according to claim 1, wherein a switching element (6) is connected to two leads (9), which extend between the first and the second side (13, 14) of the housing, and wherein the one lead (9) the first Supply potential (11) and the other supply (9) has the second supply potential (12).
3. Halbleiterbauelement nach Anspruch 1 oder 2, wobei die auf einer Gehäuseseite befindlichen und zwei benachbarten Schaltelementen (6) zugeordneten Laststroman- Schlußelemente (10) mit dem ersten bzw. dem zweiten Versorgungspotential beaufschlagt sind. 3. Semiconductor component according to claim 1 or 2, wherein the on one housing side and two adjacent switching elements (6) associated load current-connecting elements (10) are acted upon with the first and the second supply potential.
4. Halbleiterbauelement nach einem der Ansprüche 1 bis 5, wobei eine geradzahlige Vielzahl an Schaltelementen (6) vorgesehen ist, deren zugeordnete Laststromanschlusse auf der ersten bzw. der zweiten Seite (13, 14) alternierend das erste bzw. das zweite Versorgungspotential (11, 12) aufweisen.4. Semiconductor component according to one of claims 1 to 5, wherein an even number of switching elements (6) is provided, the associated load current connections on the first and the second side (13, 14) alternately the first and the second supply potential (11, 12) have.
5. Halbleiterbauelement nach einem der Ansprüche 1 bis 4, wobei ein Schaltelement (6) aus zwei seriell verschalteten Halbleiterschaltern (17, 17 λ) besteht, deren Verbindungspunkt mit einem Laststromanschlußelement (10) verbunden ist und einen Ausgang des Halbleiterbauelements bildet.5. Semiconductor component according to one of claims 1 to 4, wherein a switching element (6) consists of two series-connected semiconductor switches (17, 17 λ ), the connection point of which is connected to a load current connection element (10) and forms an output of the semiconductor component.
6. Halbleiterbauelement nach Anspruch 5, wobei die zwei seriell verschalteten Halbleiterschalter (17, 17 Λ) auf einer zu der ersten bzw. zweiten Seite (13, 14) in einer orthogonalen Fluchtlinie angeordnet sind.6. The semiconductor component according to claim 5, wherein the two series-connected semiconductor switches (17, 17 Λ ) are arranged on one of the first and second side (13, 14) in an orthogonal alignment line.
7. Halbleiterbauelement nach einem der Ansprüche 4 bis 6, wobei die Schaltelemente (6) mittels der Metallisierung (5) und/oder Bonddrähten (16) parallel geschalten sind zur Erhöhung der Stromtragfähigkeit.7. Semiconductor component according to one of claims 4 to 6, wherein the switching elements (6) by means of the metallization (5) and / or bonding wires (16) are connected in parallel to increase the current carrying capacity.
8. Halbleiterbauelement nach einem der Ansprüche 1 bis 7, wobei das Schaltelement (6) IGBT's oder MOSFETs aufweist.8. Semiconductor component according to one of claims 1 to 7, wherein the switching element (6) comprises IGBTs or MOSFETs.
9. Verwendung der Halbleiterbauelemente nach einem der Ansprüche 1 bis 8, zur Ansteuerung einer Phase eines 3-Phasen-Wechselrichter- Moduls. 9. Use of the semiconductor components according to one of claims 1 to 8, for controlling a phase of a 3-phase inverter module.
EP00934918A 1999-06-15 2000-04-20 Low-inductance semiconductor component Withdrawn EP1186041A2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19927285A DE19927285C2 (en) 1999-06-15 1999-06-15 Low-inductance semiconductor component
DE19927285 1999-06-15
PCT/DE2000/001254 WO2000077827A2 (en) 1999-06-15 2000-04-20 Low-inductance semiconductor component

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JP (1) JP3675403B2 (en)
KR (1) KR100458425B1 (en)
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WO (1) WO2000077827A2 (en)

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DE19927285A1 (en) 2000-12-28
KR20020021127A (en) 2002-03-18
JP2003502834A (en) 2003-01-21
DE19927285C2 (en) 2003-05-22
US20020089046A1 (en) 2002-07-11
JP3675403B2 (en) 2005-07-27
US6809411B2 (en) 2004-10-26
WO2000077827A2 (en) 2000-12-21
KR100458425B1 (en) 2004-11-26
WO2000077827A3 (en) 2001-04-19

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