DE29900370U1 - Power semiconductor module with cover - Google Patents

Power semiconductor module with cover

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Publication number
DE29900370U1
DE29900370U1 DE29900370U DE29900370U DE29900370U1 DE 29900370 U1 DE29900370 U1 DE 29900370U1 DE 29900370 U DE29900370 U DE 29900370U DE 29900370 U DE29900370 U DE 29900370U DE 29900370 U1 DE29900370 U1 DE 29900370U1
Authority
DE
Germany
Prior art keywords
power semiconductor
semiconductor module
cover
connection elements
module according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE29900370U
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German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EUPEC GmbH
Original Assignee
EUPEC GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EUPEC GmbH filed Critical EUPEC GmbH
Priority to DE29900370U priority Critical patent/DE29900370U1/en
Publication of DE29900370U1 publication Critical patent/DE29900370U1/en
Priority to PCT/DE2000/000031 priority patent/WO2000042656A1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)

Description

GR 99 G 1036GR 99 G 1036

• ·· «&igr;• ·· «&igr;

• » · &iacgr; ♦• » · &iacgr;♦

Beschreibung
Leistungshalbleiteriaodul mit DeckelDescription
Power semiconductor module with cover

Die Erfindung betrifft ein Leistungshalbleitermodul mit einem Kunststoffgehäuse, an dessen Innenseite in vorgegebenen Ab-• ständen Führungen für externe Anschlußelemente vorgesehen sind, mit einem als Keramikplatte ausgebildeten Gehäuseboden, der in das Kunststoffgehäuse eingesetzt ist, wobei die Keramikplatte auf ihrer oberen und unteren Seite eine Metallisierung aufweist, die auf der oberen, dem Gehäuseinneren zugewandten Seite zur Bildung von Leiterbahnen strukturiert ist und die mit zumindest einem Halbleiterbauelement und Verbindungselementen bestückt ist und einem mit dem Kunststoffgehäuse verbindbaren Deckel.The invention relates to a power semiconductor module with a plastic housing, on the inside of which guides for external connection elements are provided at predetermined intervals, with a housing base designed as a ceramic plate, which is inserted into the plastic housing, the ceramic plate having a metallization on its upper and lower side, which is structured on the upper side facing the inside of the housing to form conductor tracks and which is equipped with at least one semiconductor component and connecting elements, and a cover that can be connected to the plastic housing.

Solche Leistungshalbleitermodule sind seit langem bekannt. Bei diesem Leistungshalbleitermodulen sind die Anschlußelemente für die äußeren Anschlüsse in dem Kunststoffgehäuse angeordnet. Aus der WO 98/52221 ist ein Leistungshalbleitermodul bekannt, bei dem die Anschlußelemente in Öffnungen des Kunststoffgehäuses eingepreßt sind. Hierdurch wird die Zuverlässigkeit der internen Bondverbindungen zwischen den Anschlußelementen und dem Substrat verbessert, da keine Gefahr mehr besteht, daß die Anschlußelemente im Kunststoffgehäuse sich lockern. Das dort beschriebene Leistungshalbleitermodul weist entlang des Kunststoffgehäuses deshalb Führungselemente auf, in denen teilweise Anschlußelemente eingebracht sind. Die Anzahl und die Orte, in welchem die Anschlußelemente in die Führungselemente eingebracht werden, sind abhängig vom elektrischen Aufbau innerhalb des Leistungshalbleitermodules. Auf das Leistungshalbleitermodul wird anschließend ein Deckel aufgebracht. Dabei ragen die Anschlußelemente aus dem Deckel heraus, das heißt die Anschlußelemente sind in vorgesehene Öffnungen in dem Deckel hindurch gesteckt. Die Öffnungen sindSuch power semiconductor modules have been known for a long time. In these power semiconductor modules, the connection elements for the external connections are arranged in the plastic housing. WO 98/52221 discloses a power semiconductor module in which the connection elements are pressed into openings in the plastic housing. This improves the reliability of the internal bond connections between the connection elements and the substrate, since there is no longer any danger of the connection elements in the plastic housing becoming loose. The power semiconductor module described there therefore has guide elements along the plastic housing, some of which have connection elements inserted into them. The number and locations in which the connection elements are inserted into the guide elements depend on the electrical structure within the power semiconductor module. A cover is then placed on the power semiconductor module. The connection elements protrude from the cover, i.e. the connection elements are inserted into openings provided in the cover. The openings are

GR 99 G 103 6GR 99 G 103 6

so angeordnet, daß nicht benutzte Führungselemente durch den Deckel verschlossen sind. Der Deckel hat folglich Öffnungen an den Stellen, an denen die Anschlußelemente durchgeführt werden sollen. Dies hat jedoch zur Folge, daß für unterschiedliche Anordnungen der Anschlußelemente bei einem Leistungshalbleitermodul unterschiedliche Deckel gefertigt werden müssen. Dies erfordert separate Werkzeuge zur Erstellung der Deckel und zur Bestückung mit dem jeweiligen Leistungshalbleitermodul. Hierdurch ist auch ein hoher logistischer Aufwand notwendig.arranged in such a way that unused guide elements are closed by the cover. The cover therefore has openings at the points where the connection elements are to be inserted. However, this means that different covers have to be manufactured for different arrangements of the connection elements in a power semiconductor module. This requires separate tools for producing the covers and for fitting them with the respective power semiconductor module. This also requires a high level of logistical effort.

Ausgehend von diesem Stand der Technik besteht die Aufgabe der vorliegenden Erfindung deshalb darin, ein Leistungshalbleitermodul mit einem Deckel anzugeben, bei dem Anschlußelemente aus dem Deckel herausragen, wobei jedoch unabhängig von der Anordnung der externen Anschlußelemente das Gehäuseinnere des Leistungshalbleitermoduls dicht verschlossen sein soll. Das Leistungshalbleitermodul beziehungsweise der Deckel sollen ferner einfach und kostengünstig herstellbar sein.Based on this prior art, the object of the present invention is therefore to provide a power semiconductor module with a cover in which connection elements protrude from the cover, but whereby the housing interior of the power semiconductor module should be tightly sealed regardless of the arrangement of the external connection elements. The power semiconductor module or the cover should also be easy and inexpensive to manufacture.

Erfindungsgemäß wird diese Aufgabe dadurch gelöst, daß die Anschlußelemente durch in den Deckel einbringbare Öffnungen nach außen ragen. Durch diese Maßnahme brauchen bei der Herstellung des Deckels keine Öffnungen an den Stellen, an denen Anschlußelemente vorhanden sind, vorgesehen werden. Die Öffnungen werden vielmehr erst dadurch erzeugt, daß der Deckel auf das Leistungshalbleitermodul aufgesetzt wird und durch die Anschlußelemente die Öffnungen an den jeweiligen Stellen in den Deckel eingebracht werden. Hierdurch ist es ausreichend, nur einen einzigen Deckel herzustellen, der für alle denkbaren Anordnungen der Anschlußelemente in den Führungselementen möglich ist. Der Herstellungsaufwand ist somit vereinfacht und die Kosten sind wesentlich geringer.According to the invention, this object is achieved in that the connection elements protrude outwards through openings that can be made in the cover. This measure means that no openings need to be provided in the places where connection elements are present when the cover is manufactured. The openings are instead only created by placing the cover on the power semiconductor module and the openings are made in the cover at the respective places by the connection elements. This means that it is sufficient to produce only one cover, which is possible for all conceivable arrangements of the connection elements in the guide elements. The manufacturing effort is thus simplified and the costs are significantly lower.

GR 99 G 1036GR 99 G 1036

In einer Weiterbildung der vorliegenden Erfindung sind &eegr; einbringbare Öffnungen in dem Deckel vorgesehen. Vorteilhafterweise sind die &eegr; einbringbaren Öffnungen und die &eegr; Führungen derart angeordnet, daß die Anschlußelemente orthogonal zum Gehäuseboden beziehungsweise Deckel aus dem Leistungshalbleitermodul ragen. Dies bedeutet nichts anderes, als das die &eegr; einbringbaren Öffnungen und die &eegr; Führungen übereinander angeordnet sind. Die Anzahl &eegr; der einbringbaren Öffnungen und der Führungen ist folglich gleich. Der Platzhalter &eegr; steht in der vorliegenden Erfindung für die Anzahl der im Leistungshalbleitermodul vorhandenen Führungselemente beziehungsweise der im Deckel einbringbaren Öffnungen. Durch diese Vorgehensweise ist zu jedem Leistungshalbleitermodul nur noch ein einziger Deckeltyp notwendig.In a further development of the present invention, η insertable openings are provided in the cover. The η insertable openings and the η guides are advantageously arranged in such a way that the connection elements protrude from the power semiconductor module orthogonally to the housing base or cover. This means nothing other than that the η insertable openings and the η guides are arranged one above the other. The number η of insertable openings and guides is therefore the same. In the present invention, the placeholder η stands for the number of guide elements present in the power semiconductor module or the number of openings that can be introduced in the cover. This procedure means that only a single type of cover is required for each power semiconductor module.

Vorteilhafterweise weist der Deckel an Stellen der einbringbaren Öffnungen Sollbruchstellen auf. Hierdurch wird das Durchstoßen der einbringbaren Öffnungen mittels des Anschlußelemente erleichtert. Die Sollbruchstellen können durch ein Vorstanzen an den Stellen der einbringbaren Öffnungen erzeugt werden.The cover advantageously has predetermined breaking points at the locations of the openings. This makes it easier to pierce the openings using the connecting elements. The predetermined breaking points can be created by pre-punching at the locations of the openings.

Bei der Deckelmontage bricht der Deckel punktuell an den Stellen der einbringbaren Öffnungen auf. Es bilden sich Klappen die sich an Anschlußelemente anschmiegen. Der Deckel verschließt alle anderen, nicht durch Anschlußelemente belegten Plätze weiterhin zuverlässig. Der Deckel ist somit kraft- und formschlüssig mit dem Kunststoffgehäuse verbunden.When the cover is assembled, the cover breaks open at certain points where the openings can be made. Flaps are formed that cling to the connecting elements. The cover continues to reliably close all other spaces not occupied by connecting elements. The cover is thus connected to the plastic housing in a force-fitting and form-fitting manner.

In einer Weiterbildung der vorliegenden Erfindung weisen die Anschlußelemente Nasen auf, die an der Innenseite des Kunststoffgehäuse anliegen und die Anschlußelemente in ihrer Lage fixieren. Vorzugsweise haben diese Nasen die Gestalt von Widerhaken, so daß die Anschlußelemente eng in den Führungselementen geführt werden und gegen ein Herausziehen gesichertIn a further development of the present invention, the connecting elements have lugs that rest on the inside of the plastic housing and fix the connecting elements in their position. These lugs preferably have the shape of barbs, so that the connecting elements are guided tightly in the guide elements and secured against being pulled out.

GR 99 G 1036GR 99 G 1036

sind. Es ist auch denkbar, die Anschlußelemente mit Kröpfungen zu versehen, welche die Anschlußelemente in den Führungselementen fixieren.It is also conceivable to provide the connecting elements with offsets, which fix the connecting elements in the guide elements.

Vorzugsweise ist das Gehäuseinnere zumindest teilweise mit einer Vergießmasse gefüllt. Dies dient zur feuchtedichten Kapselung. Idealerweise ist hierzu als Vergießmasse eine Weichvergießmasse und eine Hartvergießmasse auf der Weichvergießmasse vorgesehen.
10Preferably, the housing interior is at least partially filled with a potting compound. This serves to provide moisture-tight encapsulation. Ideally, a soft potting compound is used as the potting compound and a hard potting compound is used on top of the soft potting compound.
10

Typischerweise besteht das Kunststoffgehäuse aus einem Rahmen, wobei die Anschlußelemente in dem Rahmen angeordnet sind.Typically, the plastic housing consists of a frame, with the connection elements arranged in the frame.

Weitere Ausgestaltungen der Erfindung ergeben sich aus den Unteransprüchen.Further embodiments of the invention emerge from the subclaims.

Im folgenden wird die Erfindung anhand der nachstehenden Figuren näher erläutert. Es zeigen:
20The invention is explained in more detail below with reference to the following figures. They show:
20

Figur 1 einen Schnitt durch ein LeistungshalbleitermodulFigure 1 shows a section through a power semiconductor module

mit einem Kunststoffgehäuse und einem dazugehörigen Deckel.with a plastic housing and an associated lid.

Figur 2 einen Draufsicht auf das Leistungshalbleitermodul mit Blick in das Gehäuseinnere,Figure 2 shows a top view of the power semiconductor module with a view into the housing interior,

Figur 3a eine Draufsicht auf die Außenseite des erfindungsgemäßen Deckels, so wie dieser auf das Kunststoffgehäuse aufgebracht ist undFigure 3a is a plan view of the outside of the cover according to the invention, as it is applied to the plastic housing and

Figur 3b eine Draufsicht auf die Innenseite des erfindungsgemäßen Deckels mit eingebrachten Öffnungen und den Sollbruchstellen.
35Figure 3b is a plan view of the inside of the cover according to the invention with openings and predetermined breaking points.
35

GR 99 G 1036GR 99 G 1036

Wie aus der Figur 1 zu ersehen ist, besteht das Leistungshalbleitermodul· 1 aus einem Kunststoffgehäuse 2, in das als Gehäuseboden 6 eine Keramikplatte 5 eingesetzt ist. Diese ist auf der oberen Seite 7 und der unteren Seite 8 mit einer Metallisierung 11 versehen. Die Metallisierung 11 auf der oberen Seite 7 ist dem Gehäuseinnere 15 zugewandt und ist zur Bildung von Leiterbahnen strukturiert. Auf dieser Seite 7 der Keramikplatte 5 sind Halbleiterbauelemente 9 aufgebracht. Diese Halbleiterbauelemente 9 sind zum Beispiel Leistungshalbleiterbauteile wie IGBTs, MCTs, Leistungstransitoren oder Leistungsdioden. Weiterhin sind Halbleiterbauelemente 9 vorgesehen, die eine Steuerfunktion übernehmen. Desweiteren befinden sich dort Verbindungselemente 10, die die Gestalt von Aluminiumdrähten aufweisen. Diese Verbindungselemente 10 werden über Bondverfahren auf den Halbleiterbauelementen 9 beziehungsweise der Metallisierung 11 aufgebracht.As can be seen from Figure 1, the power semiconductor module 1 consists of a plastic housing 2, into which a ceramic plate 5 is inserted as the housing base 6. This is provided with a metallization 11 on the upper side 7 and the lower side 8. The metallization 11 on the upper side 7 faces the housing interior 15 and is structured to form conductor tracks. Semiconductor components 9 are applied to this side 7 of the ceramic plate 5. These semiconductor components 9 are, for example, power semiconductor components such as IGBTs, MCTs, power transistors or power diodes. Furthermore, semiconductor components 9 are provided which perform a control function. Furthermore, there are connecting elements 10 which have the shape of aluminum wires. These connecting elements 10 are applied to the semiconductor components 9 or the metallization 11 using bonding processes.

Das Kunststoffgehäuse 2 ist in der Form eines Rahmens ausgebildet, bei dem Anschlußelemente 4 in Führungselementen 3 des Kunststoffrahmens 2 vorgesehen sind. Die Anschlußelemente 4 sind dabei von der Oberseite her in die Führungselemente 3 eingesteckt und werden hierdurch fixiert. Die Anschlußelemente 4 weisen Nasen 14 auf, die an der Innenseite des Kunststoff gehäuses 2 anliegen. Dadurch werden die Anschlußelemente 4 in ihrer Lage fixiert. Diese Nasen 14 haben die Funktion von Widerhaken, die die Anschlußelemente 4 gegen unbeabsichtigtes Herausziehen sichern. Dadurch sind die Bondverbindungen zwischen den Anschlußelementen 4 und dem Halbleiterbauelementen 9 beziehungsweise der Metallisierung 11 gegen Zerstörung gesichert. Die Anschlußelemente verlaufen im Gehäuseinneren in etwa parallel zum Gehäuseboden 6.The plastic housing 2 is designed in the form of a frame, in which connection elements 4 are provided in guide elements 3 of the plastic frame 2. The connection elements 4 are inserted into the guide elements 3 from the top and are thereby fixed. The connection elements 4 have lugs 14 that rest on the inside of the plastic housing 2. This fixes the connection elements 4 in their position. These lugs 14 have the function of barbs that secure the connection elements 4 against accidental pulling out. This protects the bond connections between the connection elements 4 and the semiconductor components 9 or the metallization 11 against destruction. The connection elements run inside the housing approximately parallel to the housing base 6.

Das Leistungshalbleitermodul 1 weist ferner einen Deckel 12 auf, der das Modul in seiner Endposition verschließt. Dabei sind die Anschlußelemente 4 durch Öffnungen 13 in dem DeckelThe power semiconductor module 1 also has a cover 12 which closes the module in its final position. The connection elements 4 are through openings 13 in the cover

GR 99 G 1036GR 99 G 1036

gesteckt, die in der endgültigen Position des Deckels aus diesem herausragen. Der Deckel verschließt dabei nicht benutzte Führungselemente 3.which protrude from the lid when it is in its final position. The lid closes any unused guide elements 3.

An der Unterseite weist das Leistungshalbleitermodul einen Kühlkörper 16 auf, der zum einen mit dem Kunststoffgehäuse 2, zum anderen mit dem Gehäuseboden 6 verbunden ist.On the underside, the power semiconductor module has a heat sink 16, which is connected on the one hand to the plastic housing 2 and on the other hand to the housing base 6.

Figur 2 zeigt eine Draufsicht auf das Leistungshalbleitermodul 1, wobei der Gehäuseboden mit dem Kunststoffgehäuse 2 bereits verbunden ist. Aus dieser Perspektive wird ersichtlich, daß die Führungselemente entlang des gesamten Umfangs des Kunststoffgehäuses 2 in regelmäßigen Abständen angebracht sind. Es ist selbstverständlich nicht notwendig, die Führungselemente in regelmäßigen Abständen sowie entlang des gesamten Umfangs anzubringen. Nur wenige der Führungselemente 3 sind mit Anschlußelementen 4 bestückt. Durch das Vorsehen der Führungselemente 3 entlang des gesamten Umfangs des Kunststoff gehäuses 2 kann eine flexible Bestückung des Leistungshalbleitermodules erfolgen. Entsprechend der Anordnung der Halbleiterbauelemente können an den geeignetsten Positionen die Anschlußelemente 4 in den Führungselementen 3 vorgesehen werden. Hierdurch sind kurze Bondverbindungen zwischen den Anschlußelementen und den Halbleiterbauelementen beziehungsweise der Metallisierung 11 möglich.Figure 2 shows a top view of the power semiconductor module 1, with the housing base already connected to the plastic housing 2. From this perspective, it is clear that the guide elements are attached at regular intervals along the entire circumference of the plastic housing 2. It is of course not necessary to attach the guide elements at regular intervals and along the entire circumference. Only a few of the guide elements 3 are equipped with connection elements 4. By providing the guide elements 3 along the entire circumference of the plastic housing 2, the power semiconductor module can be equipped flexibly. Depending on the arrangement of the semiconductor components, the connection elements 4 can be provided in the guide elements 3 at the most suitable positions. This enables short bond connections between the connection elements and the semiconductor components or the metallization 11.

In Figur 3 a ist eine Draufsicht auf die Außenseite des Dekkels gezeigt, so wie er korrekt mit dem Kunststoffgehäuse in Figur 2 verbunden werden würde. Hierbei sind bereits die Öffnungen 13 sichtbar, die an den Stellen der Anschlußelemente 4 eingebracht sind. Die Öffnungen 13 sind dabei erst beim Zusammenfügen des Deckels 12 und des Kunststoffgehäuses 2 durch ein Durchstoßen mit den Anschlußelementen eingebracht. In Figur 3b ist die Innenseite, das heißt die Seite des Deckels, die dem Gehäuseinneren zugewandt, dargestellt. Hier ist er-Figure 3a shows a top view of the outside of the cover, as it would be correctly connected to the plastic housing in Figure 2. The openings 13 are already visible here, which are made at the locations of the connection elements 4. The openings 13 are only made when the cover 12 and the plastic housing 2 are joined together by piercing the connection elements. Figure 3b shows the inside, i.e. the side of the cover that faces the inside of the housing. Here,

GR 99 G 1036GR 99 G 1036

sichtlich, daß der Deckel an den Stellen der Führungselemente 3 des Kunststoffgehäuses 3 Sollbruchstellen 18 aufweist. Diese können beispielsweise durch ein Vorstanzen erzeugt sein. Zwischen zwei einbringbaren Öffnungen 13 sind jeweils StegeIt is clear that the cover has predetermined breaking points 18 at the locations of the guide elements 3 of the plastic housing 3. These can be created, for example, by pre-punching. Between two insertable openings 13, webs are provided

17 angeordnet, die durch das Vorstanzen der Sollbruchstellen17, which are formed by pre-punching the predetermined breaking points

18 verblieben sind.18 remained.

Claims (10)

GR 99 G 1036 SchutzansprücheGR 99 G 1036 Protection claims 1. Leistungshalbleitermodul (1) mit1. Power semiconductor module (1) with - einem als Rahmen ausgebildetem Kunststoffgehäuse (2), an- a plastic housing (2) designed as a frame, dessen Innenseite in vorgegebenen Abständen &eegr; Führungen (3) für externe Anschlußelemente (4) vorgesehen sind,on the inside of which guides (3) for external connection elements (4) are provided at predetermined intervals, - einem als Keramikplatte (5) ausgebildeten Gehäuseboden (6), der in das Kunststoffgehäuse (2) eingesetzt ist, wobei die Keramikplatte auf ihrer oberen und unteren Seite (7,8) eine Metallisierung (11) aufweist, die auf der oberen, dem Gehäuseinneren zugewandten Seite (6) zur Bildung von Leiterbahnen strukturiert ist und die mit zumindest einem Halbleiterbauelement (9) und Verbindungselementen (10) bestückt ist,- a housing base (6) designed as a ceramic plate (5) which is inserted into the plastic housing (2), the ceramic plate having a metallization (11) on its upper and lower sides (7, 8), which is structured on the upper side (6) facing the housing interior to form conductor tracks and which is equipped with at least one semiconductor component (9) and connecting elements (10), - maximal &eegr; in den Führungen (3) fixierten, äußere Anschlüsse bildenden Anschlußelementen, die an ihren unteren Enden Bondflächen aufweisen und über die Verbindungselemente (10) mit dem zumindest einen Halbleiterbauelement (9) und/oder mit der Metallisierung (11) elektrisch verbunden sind - einem mit dem Kunststoffgehäuse (2) verbindbaren Deckel (12),- connection elements that are fixed to a maximum of η in the guides (3) and form external connections, which have bonding surfaces at their lower ends and are electrically connected to the at least one semiconductor component (9) and/or to the metallization (11) via the connection elements (10) - a cover (12) that can be connected to the plastic housing (2), dadurch gekennzeichnet, daß die Anschlußelemente (4) durch über in den Deckel (12)characterized in that the connecting elements (4) are connected to the cover (12) by einbringbare Öffnungen (13) nach außen ragen. 25insertable openings (13) protrude outwards. 25 2. Leistungshalbleitermodul nach Anspruch 1, dadurch gekennzeichnet,2. Power semiconductor module according to claim 1, characterized in daß &eegr; einbringbare Öffnungen (13) in dem Deckel (12) vorgesehen sind.
30that η introduceable openings (13) are provided in the cover (12).
30 3. Leistungshalbleitermodul nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die &eegr; einbringbaren Öffnungen (13) und die &eegr; Führungen (3) derart angeordnet sind, daß die Anschlußelemente orthogo-3. Power semiconductor module according to claim 1 or 2, characterized in that the &eegr; insertable openings (13) and the &eegr; guides (3) are arranged such that the connection elements are orthogonal GR 99 G 1036GR 99 G 1036 nal zum Gehäuseboden (6) beziehungsweise Deckel (12) aus dem Leistungshalbleitermodul (1) ragen.protrude from the power semiconductor module (1) in line with the housing base (6) or cover (12). 4. Leistungshalbleitermodul nach Anspruch 1 bis 3, dadurch gekennzeichnet, daß die Öffnungen (13) beim Zusammenfügen des Deckels (12) und des Kunststoffgehäuses (2) durch Durchstoßen mit den Anschlußelementen (4) eingebracht sind.4. Power semiconductor module according to claims 1 to 3, characterized in that the openings (13) are introduced by piercing with the connection elements (4) when the cover (12) and the plastic housing (2) are joined together. 5. Leistungshalbleitermodul nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, daß der Deckel (12) an Stellen der einbringbaren Öffnungen (13) Sollbruchstellen aufweist.5. Power semiconductor module according to one of claims 1 to 4, characterized in that the cover (12) has predetermined breaking points at the locations of the openings (13) that can be introduced. 6. Leistungshalbleitermodul nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß der Deckel (12) kraftschlüssig und formschlüssig mit dem Kunststoffgehäuse (2) verbunden ist.6. Power semiconductor module according to one of claims 1 to 5, characterized in that the cover (12) is connected to the plastic housing (2) in a force-fitting and form-fitting manner. 7. Leistungshalbleitermodul nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, daß die Anschlußelemente (4) Nasen (14) aufweisen, die an der Innenseite des Kunststoffgehäuses (2) anliegen und die Anschlußelemente in ihrer Lage fixieren.7. Power semiconductor module according to one of claims 1 to 6, characterized in that the connection elements (4) have lugs (14) which rest against the inside of the plastic housing (2) and fix the connection elements in their position. 8. Leistungshalbleitermodul nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet,8. Power semiconductor module according to one of claims 1 to 7, characterized in that daß das Gehäuseinnere (15) zumindest teilweise mit einer Vergießmasse gefüllt ist.
30that the housing interior (15) is at least partially filled with a casting compound.
30 9. Leistungshalbleitermodul nach Anspruch 6, dadurch gekennzeichnet,9. Power semiconductor module according to claim 6, characterized in daß als Vergießmasse eine Weichgießmasse und eine Hartvergießmasse auf der Weichvergießmasse vorgesehen ist. 35that a soft casting compound and a hard casting compound on the soft casting compound are provided as the casting compound. 35 10. Leistungshalbleitermodul nach einem der Ansprüche 1 bis 9, dadurch gekennzeichnet, daß das Kunststoffgehäuse (2) als Rahmen ausgeführt ist.10. Power semiconductor module according to one of claims 1 to 9, characterized in that the plastic housing (2) is designed as a frame.
DE29900370U 1999-01-12 1999-01-12 Power semiconductor module with cover Expired - Lifetime DE29900370U1 (en)

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DE29900370U DE29900370U1 (en) 1999-01-12 1999-01-12 Power semiconductor module with cover
PCT/DE2000/000031 WO2000042656A1 (en) 1999-01-12 2000-01-04 Power semiconductor module with cover

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19927285A1 (en) * 1999-06-15 2000-12-28 Eupec Gmbh & Co Kg Low-inductance semiconductor component
DE10024377A1 (en) * 2000-05-17 2001-11-29 Eupec Gmbh & Co Kg Housing device and contact element to be used therein
DE10120402A1 (en) * 2001-04-25 2002-11-14 Danfoss Silicon Power Gmbh Housing for power semiconductor module with plastics body
US7541670B2 (en) 2006-06-29 2009-06-02 Mitsubishi Electric Corporation Semiconductor device having terminals
DE102008012703B4 (en) * 2007-03-08 2015-05-28 Fuji Electric Co., Ltd. Semiconductor device and method of making the same
DE102015113111A1 (en) * 2015-08-10 2017-02-16 Infineon Technologies Ag Power semiconductor module with improved sealing

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FR2859066A1 (en) * 2003-08-14 2005-02-25 Int Rectifier Corp MOSFET-type power module for electric motors in car, has moulded casing having walls enclosing lower portion including conductive zones, and moulding material filling spaces between zones so that lower portion and walls form unified body
JP4894784B2 (en) 2008-02-27 2012-03-14 三菱電機株式会社 Semiconductor device and manufacturing method thereof
JP2011228388A (en) * 2010-04-16 2011-11-10 Honda Motor Co Ltd Auxiliary substrate bonding structure
WO2015174158A1 (en) * 2014-05-15 2015-11-19 富士電機株式会社 Power semiconductor module and composite module
JP6617490B2 (en) * 2015-09-15 2019-12-11 富士電機株式会社 Semiconductor device

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JPS61218151A (en) * 1985-03-23 1986-09-27 Hitachi Ltd Semiconductor device
US5038197A (en) * 1990-06-26 1991-08-06 Harris Semiconductor Patents, Inc. Hermetically sealed die package with floating source
EP0513410B1 (en) * 1991-05-15 1993-12-15 IXYS Semiconductor GmbH Semiconductor power module and method of making such a module

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19927285A1 (en) * 1999-06-15 2000-12-28 Eupec Gmbh & Co Kg Low-inductance semiconductor component
DE19927285C2 (en) * 1999-06-15 2003-05-22 Eupec Gmbh & Co Kg Low-inductance semiconductor component
DE10024377A1 (en) * 2000-05-17 2001-11-29 Eupec Gmbh & Co Kg Housing device and contact element to be used therein
US6802745B2 (en) 2000-05-17 2004-10-12 Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co. Kg Housing for accomodating a power semiconductor module and contact element for use in the housing
DE10024377B4 (en) * 2000-05-17 2006-08-17 Infineon Technologies Ag Housing device and contact element to be used therein
DE10120402A1 (en) * 2001-04-25 2002-11-14 Danfoss Silicon Power Gmbh Housing for power semiconductor module with plastics body
DE10120402B4 (en) * 2001-04-25 2005-04-14 Danfoss Silicon Power Gmbh The power semiconductor module housing
US7541670B2 (en) 2006-06-29 2009-06-02 Mitsubishi Electric Corporation Semiconductor device having terminals
DE102007012818B4 (en) * 2006-06-29 2012-08-16 Mitsubishi Electric Corp. Semiconductor device with connections
DE102008012703B4 (en) * 2007-03-08 2015-05-28 Fuji Electric Co., Ltd. Semiconductor device and method of making the same
DE102015113111A1 (en) * 2015-08-10 2017-02-16 Infineon Technologies Ag Power semiconductor module with improved sealing
DE102015113111B4 (en) * 2015-08-10 2020-01-30 Infineon Technologies Ag Power semiconductor module with improved sealing

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