EP1121699A1 - Dispositif de commutation electrique et procede permettant la deconnexion electrique d'une charge - Google Patents

Dispositif de commutation electrique et procede permettant la deconnexion electrique d'une charge

Info

Publication number
EP1121699A1
EP1121699A1 EP99970504A EP99970504A EP1121699A1 EP 1121699 A1 EP1121699 A1 EP 1121699A1 EP 99970504 A EP99970504 A EP 99970504A EP 99970504 A EP99970504 A EP 99970504A EP 1121699 A1 EP1121699 A1 EP 1121699A1
Authority
EP
European Patent Office
Prior art keywords
electric
irradiation
electric switch
rectifying means
switching element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99970504A
Other languages
German (de)
English (en)
Inventor
Jan Isberg
Hans Bernhoff
Pan Min
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB AB
Original Assignee
ABB AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ABB AB filed Critical ABB AB
Publication of EP1121699A1 publication Critical patent/EP1121699A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
    • H01H9/541—Contacts shunted by semiconductor devices
    • H01H9/542—Contacts shunted by static switch means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
    • H01H9/541—Contacts shunted by semiconductor devices
    • H01H9/542—Contacts shunted by static switch means
    • H01H2009/543—Contacts shunted by static switch means third parallel branch comprising an energy absorber, e.g. MOV, PTC, Zener
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
    • H01H9/541—Contacts shunted by semiconductor devices
    • H01H9/542—Contacts shunted by static switch means
    • H01H2009/545—Contacts shunted by static switch means comprising a parallel semiconductor switch being fired optically, e.g. using a photocoupler

Definitions

  • the present invention relates to an electric switching device comprising a quick mechanical electric switch.
  • the device is primarily intended for disconnecting high powers, for example when overcurrents occur.
  • the invention also relates to a method for performing electric disconnection of a load according to the preamble of the appended method claim.
  • the device may more exactly be intended for connecting and disconnecting objects in electric power plants or electric power networks as well connecting and disconnecting parts thereof to or from other equipment included in the electric power plant or an object connected thereto.
  • object is intended to have a very broad sense and comprises any apparatuses and devices included in electric power plants and electric power networks as well »as generally parts of the electric power plant and/or the electric power network.
  • the object may be an electric apparatus having a magnetic circuit, for example a generator, transformer or motor. Also other objects are conceivable, for instance power lines and cables, switch-gear equipment etc.
  • the present invention is intended to be used for middle and high voltages. According to the lEC-standard middle voltage means 1 - 72,5 kV, while high voltage is >72,5 kV. Accordingly, the transmission, subtransmission and distribution levels are comprised.
  • circuit breakers for instance SF 6 - breakers, oil breakers or so-called vacuum breakers, have normally been used for connection and disconnection of the object in question.
  • semiconductor "breakers" such as for example thyristors or IGBTs, may be used.
  • All said circuit breakers has such a design that they when breaking give rise to a galvanic separation of two metal contacts (arcing contacts), between which the current to be interrupted continues to flow in an arc. The interruption or breaking is then achieved by arranging the breaker so that this arc is extinguished upon a zero passage, i.e. when the current through the breaker arrives to zero and change polarity, which takes place two times each twenty milliseconds in a 50 Hz-network. Accordingly, these circuit breakers only function for alternating current and not for direct current, where no zero passage occurs.
  • a circuit breaker with the construction according to above has to be designed for being able to interrupt both in a large amount of breaking cases with comparatively moderate currents, so-called operation currents, but also in breaking cases with a high over- current, fault currents.
  • a circuit breaker has to' be designed to be able to handle large amounts of energy when breaking an overcurrent in the arc be- tween the arcing contacts.
  • the gap between the contacts has to be brought to a very high dielectric strength within a short period of time after a current breaking has been successfully carried out so as to avoid reignition of an arc, i.e. guarantee the continued existence of the breaking .
  • circuit breakers for example a SF 6 -breakers , oil breakers or so-called vacuum breakers, have to handle a high thermal and electric load in one and the same critical region within a short period of time, they will get a comparatively complex construction, which results in a comparatively long breaking time.
  • the overcurrent primarily intended here is a short-circuit current generated in connection to the object switched, for example as a consequence of a fault in the electric insulation system of the object switched.
  • Such faults means that the fault current (short-circuit current) of external net- work/equipment will tend to flow through an arc. The result of this may be a very large breakdown.
  • the short-circuit current (fault current) dimensioned for the Swedish power network is 63 kA.
  • the short-circuit current may in the reality be 40-50 kA.
  • a problem with said circuit breakers is the long breaking time thereof.
  • the breaking time dimensioning (lEC-standard) for a breaking completely carried out is 150 milliseconds (ms). It is associated with large difficulties to reduce this breaking time to un- der 90-1 30 ms depending on the operation case. The consequence of this is that a very high current will flow through the object switched upon a fault therein during the entire time required for bringing the circuit breaker to break.
  • the total fault current of the external power network means during this time a considerable stress on the object switched.
  • the operation of the network will during this time also be disturbed, so that other equipment connected to the network may be substantially disturbed or damaged.
  • Semiconductor power devices such as thyristors, MOSFETs and IGBTs, may not alone take the voltages in question, so that a number thereof have to be connected in series. In the order of hundreds of such components have to be connected in series in some high voltage applications. This leads to a complicated control of the equipment for ensuring the operation, i.e. that the voltage and power is distributed uniformly over the components.
  • the use of semiconductor components made of silicon also results in comparatively high losses, which requires an efficient cooling, since the component may otherwise break down thermally.
  • the total system with control, regulation and cooling all the components connected in series individually on the individual voltage level thereof tends to become very complex and the entire system is therefor associated with high costs. The costs may exceed those for circuit breakers considerably, which in general excludes the use of such semiconductor components in electric power plants and electric power networks for the application discussed here.
  • the object of the present invention is to provide a device and a method making it possible to obtain a better switching and by that a reduced stress on the object switched and also a reduced disturbance of the network and equipment connected thereto to a cost being attractive in this connection.
  • the second electric switch is designed so that a switch- ing element, which hereinafter is called shunt element, is connected in parallel with the first electric switch in the form of a quick mechanical electric switch, which accordingly will have metal contacts.
  • the shunt element is so designed that it may be brought in an electrically conducting state through irradiation, for example by light or an electron beam.
  • a disconnection i.e. a breaking
  • the shunt element is exposed to said irradiation, which brings the shunt element in a conducting state and the mechanical switch is controlled to disconnect without any thermal or electric load.
  • the exposure of the shunt element to irradiation is preferably ceased when the breaker is in a separated position, which means that this element looses its electrical conductivity.
  • the invention is based on the principle that the trust is not only put on a mechanical operation for opening and closing a cir- cuit and that conventional power semiconductor components are neither used with the high costs and the high losses connected thereto, but a switching device comprising a mechanical electric switch and a shunt element, the conductivity of which is controlled by irradiation, is instead utilized.
  • This method to release the mechanical contact from electric thermal stress during the very operation means that the breaker may be constructed so that a very quick breaking is obtained .
  • said rectifying means is a rectifying diode.
  • a reverse biased diode in the second electric switch in a switching device of this type is advantageous, since it may be easily and reliably controlled to conduct by irradiation thereof when desired and also efficiently hold the voltages required when in the blocking state. Furthermore, such diodes are widely available on the market and may be purchased to a considerably low cost. It is taught by P. Roggwiler and R. Sittig in CH 1616-2/80/0000-0646 500.75, 1980 IEEE, to use a photoconductive diode being reverse biased and connected in anti-parallel with a thyristor to turn the thyristor off by making the diode being reverse biased conducting through irradiation of the diode and by that creating free minority charge carriers therein.
  • the present inventors propose a new use of such a rectifying diode, namely in an electric switching device having a quick mechanical electric switch for taking care of an essential part of the current through the switching device when the mechanical electric switch is disconnecting for enabling a much faster breaking of an electric current through the electric switching device, especially for high electric powers, than the prior art devices allow.
  • the diode may be of any conceivable type, which may be controlled by irradiation thereof, and it is according to different preferred embodiments a pn-diode, a pin-diode and a schottky-di- ode, respectively. Such diodes are available on the market at a cost being low in this context.
  • the rectifying means has at least one layer made of SiC and it has at least one layer made of diamond, respectively.
  • Such rectifying means such as diodes, made of SiC or diamond, will due to the char- acteristics of these materials be very advantageous in an electric switching device of this type.
  • These two materials have both a very high breakdown voltage, so that such a rectifying means may hold a considerably higher voltage in the blocking state thereof than such rectifying means made of semiconductor materials conventionally used.
  • This means that one such rectifying means may hold a voltage which would normally require a plural- ity of such rectifying means connected in series or fewer such rectifying means connected in series may be used than when using such rectifying means of conventional materials for holding very high voltages.
  • both SiC and diamond are stable at very high temperatures, well up to 1 000 K, which may be very useful when high electric powers are to be handled.
  • the rectifying means is a photoconductive element. This constitutes an easy way to control the rectifying means.
  • said second electric switch comprises a plurality of said rectifying means connected in series, which means that the device may function well when breaking very high voltages.
  • At least two of the rectifying means of said plurality of rectifying means are connected to be reverse biased in opposite directions, so that at least one is forward biased when another is reverse biased. It is emphasised that this embodiment also comprises the case that said plurality is only two, and that the device then only has two rectffying means oppositely connected.
  • An electric switching device of this type may be used for breaking alternating currents very rapidly, since it will always have at least one of the rectifying means reverse biased, and this may then be controlled by irradiation thereof to conduct, so that the second electric switch may take care of the major part of the current through the device when this is desired.
  • the device comprises a plurality of quick mechanical electric switches first mentioned connected in series and having each a second electric switch connected in parallel therewith.
  • a device may be used for handling very high electric powers, and the quick mechanical electric switches will then advantageously be controlled simultaneously, as well as the second electric switches of the device.
  • the switching element has a member comprising three superimposed semiconductor layers, in which the two outermost are doped according to a first conductivity type, n or p, and the intermediate layer is doped according to a second conductivity type resulting in two pn-junctions oppositely directed for forming two rectifying means connected in series and reverse biased in opposite directions to each other by one and the same member.
  • a switching element is advantageous for rapidly breaking alternating currents irrespectively of the instantaneous phase position of the alternating voltage.
  • said switching element is formed by a plurality of pin-diodes formed by an intermediate intrihsic bulk layer and islands of p-doped layers arranged on one side of said intermediate layer and is- lands of n-doped layers located on the opposite side of the intermediate layer and substantially covering the space between two adjacent p-type layers for forming a cascade of pin-diodes forming a continuos current path running alternatingly from one p-type layer to a n-type layer and from said n-type layer to an- other p-type layer and by that having two succeeding diodes directed in opposite directions.
  • Such a switching element may switch very high voltages and it may due to the "bipolar" struc- ture thereof be used in electric switching devices where alternating voltages are to be switched very rapidly.
  • At least one varistor is connected in parallel with the first electric switch and the switching element. Overvoltages which would be generated when breaking an inductive load induce a current in said varistor, in which the magnetic energy is absorbed. Accordingly, the varistor is used to absorb magnetic energy possibly stored in the electric switching device.
  • an electric switching device according to any embodiment of the invention mentioned above is used for connecting and disconnect- ing objects in an electric power plant to an from, respectively, an electric power network or another equipment included in the electric power plant.
  • the invention also comprises a method for performing electric disconnection of a load, especially for disconnecting high electric powers, by means of a quick mechanical electric switch, in which a second electric switch connected in parallel with the first- mechanical electric switch and comprising any radiation source and a switching element sensitive to irradiation is brought to form an electrically well conducting current path by-passing the first electric switch through irradiation of the switching element by the irradiation source, so that the switching element is brought to go from an electrically insulating state to an electrically conducting state and that the first electric switch is brought to interruption.
  • Fig 1 is a very schematic view illustrating the most essential parts of an electric switching device ac- cording to a first preferred embodiment of the invention
  • Fig 2 is a diagram illustrating the distance x between two contacts in a mechanical electric switch in the electric switching device according to fig 1 and the electric conductivity of the photoconduc- tive diode in the device versus time when the electric switching device disconnects a load ,
  • Fig 3 is a diagram illustrating the current I -, through the mechanical electric switch and the current l 2 through the photoconductive diode of the device according to fig 1 versus time when disconnecting a load,
  • Fig 4 is a very schematic view of a part of an electric switching device according to a second preferred embodiment of the invention.
  • Fig 5 is a schematic cross-section view of a switching element for an electric switching device according to the invention
  • Fig 6 and 7 are schematic views of electric switching devices according to third and fourth embodiments, respectively, of the present invention.
  • Fig 8 is a schematic view of a switching element for an electric switching device according to the invention.
  • An electric switching device 1 is very schematically illustrated in fig 1 .
  • This device is arranged in an electric power plant having a switched object 2, such as a generator.
  • This object is through a line 3 connected to an external electric power supply network 4.
  • the electric switching device is arranged to switch the object, i.e. connect and disconnect the object 2 and the power network 4.
  • said switching of the object may take place with respect to any other part of the electric power plant.
  • the disconnection of the object 2 with respect to the network may either take place for protecting the object against fault currents from the network or the equipment or for protecting the network/equipment against voltage and operation disturbances that would result from a high fault current towards the object.
  • the switching device comprises a first electric switch 5 in the form of a quick mechanical switch, which may be a disconnector or a breaker, having two contacts controlled to move apart for breaking and into contact with each other for closing the switch .
  • a second electric switch 6 is connected in parallel with the first switch 5 and comprises a switching element in the form of a photoconductive diode 7 arranged to be reverse biased when the object 2 is connected to the network 4, which in this case is a direct current network.
  • the second electric switch also comprises an irradiation source 8 adapted to irradiate the diode 7 for gen- erating free charge carriers therein and bringing it into a conducting state as long as it is irradiated.
  • the switching element is controlled by means, the irradiation source, electrically separated from said element.
  • the device has also a control unit 9 adapted to control the light source 8 and the mechanical switch 5.
  • This unit is connected to a sensor 10 adapted to detect parameters indicating the presence of an overcurrent in the line 3.
  • a varistor 11 is connected in parallel with the mechanical switch 5, and the function thereof will be explained further below.
  • the electric switching device is very fast with respect to a con- ventional circuit breaker, which means that a fault current in the line 3 will not rise to the maximum level.
  • Fig 2 and 3 illustrates what's happening when an overcurrent has been detected by the sensor 10 and the control unit 9 controls the switching device to disconnect the object 2 from the network/equipment 4.
  • the mechanical switch is controlled to start to separate the contacts, and these move apart according to the line x in fig 2 indicating the distance be- tween the two contacts.
  • the light source 8 is at the same -time controlled to start to irradiate the diode 7, so that the electrical conductivity thereof is changed according to the line ⁇ in fig 2.
  • FIG. 4 A part of an electric switching device according to a second preferred embodiment of the invention is very schematically illustrated in fig 4, and this differs from that shown in fig 1 by the fact that the switching element 6 has two rectifying diodes 7, 7' con- nected in series and so that they will be reverse biased in opposite directions.
  • An irradiation source 8, 8' is arranged for each diode. This device is adapted to switch alternating voltages, since one of the diodes will always be reverse biased and when not irradiated be in the blocking state.
  • Fig 5 illustrates how a switching element for the alternating voltage case may be constructed by a pnp- or npn-structure of superimposed semiconductor layers 12-14.
  • the outermost layers 12, 14 are doped according to the same conductivity type, n or p, whereas the intermediate layer 13 is doped according to the opposite conductivity type.
  • Two light sources 8, 8' are arranged for obtaining the same function of this component as of the two diodes 7, 7' according to fig 4. Accordingly, irradiation of for instance the layer 12, when the pn-junction 15 is reverse biased will generate minority charge carriers therein for conduction through this junction.
  • Fig 6 illustrates an electric switching device being an alternative to that shown in fig 1 for the direct voltage case. It is illustrated how two rectifying means in the form of diodes are connected in series across the mechanical switch 5 for being able to hold higher voltages when needed. A varistor 1 1 is connected across each diode for absorbing magnetic energy and for ensuring that the two diodes 7, 7' will share the power and the voltage developed upon disconnecting equally. It should be mentioned, that a disconnector may be arranged between the switching element 6 and the network/equipment 4 and be controlled to disconnect the network/equipment 4 from the diode/diodes after the disconnection of the object 2 from the network/equipment for taking the voltage away from the diodes in the disconnected state.
  • FIG. 7 A further preferred embodiment of the invention is shown in fig 7, which constitutes a combination of the embodiment shown in fig 6 and that of fig 4.
  • fig 7 A further preferred embodiment of the invention is shown in fig 7, which constitutes a combination of the embodiment shown in fig 6 and that of fig 4.
  • two mechanical electric switches 5, 5' are connected in series, and two oppositely directed diodes 7, 7' are connected acro'ss each mechanical switch. Accordingly, this device is suitable for breaking alternating currents, and the series connection of the mechanical switches makes it possible to handle higher voltages.
  • Fig 8 illustrates a preferred way to create many rectifying means connected in series for the use as a switching element in an electric switching device for switching alternating voltages.
  • This switching element 6 is constituted by a cascade of pin-diodes, which are integrated in the same semiconductor wafer.
  • a cas- cade of a great number of diodes, for instance 10-40, may easily be manufactured by etching from one single "semi-insulating- wafer" 17, the upper side of which has been doped according to a first conductivity type, such as p, or coated by a layer of this conductivity type and the lower side of which has been doped according to the opposite conductivity type, such as n.
  • the layers 18-20 may be p-doped, and the layers 21 -23 may be n-doped.
  • the layer 17 is substantially undoped. It is shown to the right in fig 8 how a number of diodes are created in this way. Thus, if each element (diode) may switch 1 kV the cascade may switch substantially higher voltages, for instance 20 kV for 40 diodes in series.
  • a structure of this type function as a conventional photoconductive switch, i.e. is conducting when it is irradiated and insulating when not irradiated.
  • the switching per- formances of the individual diodes depends upon the material used, the thickness of the layer 17 and the doping profiles, and it may be mentioned that the use of SiC or intrinsic diamond for the layer 17 will result in diodes able to hold much higher voltages, perhaps in the region of 10 kV or higher each.
  • the number of rectifying means, mechanical switches and the like may of course be arbitrarily varied.
  • the irradiation source may be of any type utilising for instance visible light, UV-light, I R-light, electron beams, ion beams, x-ray radiation and so on.

Landscapes

  • Keying Circuit Devices (AREA)
  • Electronic Switches (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

L'invention se rapporte à un dispositif de commutation électrique comportant un commutateur électromécanique rapide (5) et une source de rayonnement (8) et au moins un élément de commutation (7) sensible au rayonnement et conçu pour créer un chemin de courant assurant une bonne conduction électrique et court-circuitant le commutateur électromécanique lorsque celui-ci reçoit le rayonnement de la source de rayonnement, mais passant dans un état électriquement isolant en l'absence de rayonnement sur le commutateur. Ledit élément de commutation est un dispositif redresseur (7) conçu pour être polarisé en sens inverse lorsqu'il ne reçoit pas de rayonnement, qui devient conducteur lorsque des porteurs de charges libres y sont générés sous l'effet du rayonnement émanant de ladite source.
EP99970504A 1998-10-14 1999-10-07 Dispositif de commutation electrique et procede permettant la deconnexion electrique d'une charge Withdrawn EP1121699A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE9803490 1998-10-14
SE9803490A SE9803490D0 (sv) 1998-10-14 1998-10-14 An electric switching device and a method for performing electric disconnection of a load
PCT/SE1999/001794 WO2000022640A1 (fr) 1998-10-14 1999-10-07 Dispositif de commutation electrique et procede permettant la deconnexion electrique d'une charge

Publications (1)

Publication Number Publication Date
EP1121699A1 true EP1121699A1 (fr) 2001-08-08

Family

ID=20412932

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99970504A Withdrawn EP1121699A1 (fr) 1998-10-14 1999-10-07 Dispositif de commutation electrique et procede permettant la deconnexion electrique d'une charge

Country Status (5)

Country Link
EP (1) EP1121699A1 (fr)
JP (1) JP4615721B2 (fr)
AU (1) AU1422400A (fr)
SE (1) SE9803490D0 (fr)
WO (1) WO2000022640A1 (fr)

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SE525109C2 (sv) * 2002-12-30 2004-11-30 Mb Scient Ab Högspänningsgeneratorkrets
JP4913761B2 (ja) * 2007-02-07 2012-04-11 株式会社ワイ・ワイ・エル 限流遮断器
JP6202304B2 (ja) * 2013-06-07 2017-09-27 国立研究開発法人産業技術総合研究所 アーク発生防止装置
KR102167948B1 (ko) * 2014-12-31 2020-10-20 엘에스일렉트릭(주) 직류차단기 및 이의 차단방법

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Also Published As

Publication number Publication date
JP4615721B2 (ja) 2011-01-19
JP2002527870A (ja) 2002-08-27
WO2000022640A1 (fr) 2000-04-20
AU1422400A (en) 2000-05-01
SE9803490D0 (sv) 1998-10-14

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