EP1061155A4 - Appareil de traitement sous vide - Google Patents
Appareil de traitement sous videInfo
- Publication number
- EP1061155A4 EP1061155A4 EP99937952A EP99937952A EP1061155A4 EP 1061155 A4 EP1061155 A4 EP 1061155A4 EP 99937952 A EP99937952 A EP 99937952A EP 99937952 A EP99937952 A EP 99937952A EP 1061155 A4 EP1061155 A4 EP 1061155A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- processing apparatus
- vacuum processing
- vacuum
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP07317798A JP4147608B2 (ja) | 1998-03-06 | 1998-03-06 | 熱処理装置 |
JP7317798 | 1998-03-06 | ||
PCT/JP1999/001078 WO1999045166A1 (fr) | 1998-03-06 | 1999-03-05 | Appareil de traitement sous vide |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1061155A1 EP1061155A1 (fr) | 2000-12-20 |
EP1061155A4 true EP1061155A4 (fr) | 2004-07-07 |
EP1061155B1 EP1061155B1 (fr) | 2005-08-31 |
Family
ID=13510608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP99937952A Expired - Lifetime EP1061155B1 (fr) | 1998-03-06 | 1999-03-05 | Appareil de traitement sous vide |
Country Status (6)
Country | Link |
---|---|
US (1) | US6599367B1 (fr) |
EP (1) | EP1061155B1 (fr) |
JP (1) | JP4147608B2 (fr) |
KR (1) | KR100514726B1 (fr) |
DE (1) | DE69927003T2 (fr) |
WO (1) | WO1999045166A1 (fr) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4147608B2 (ja) * | 1998-03-06 | 2008-09-10 | 東京エレクトロン株式会社 | 熱処理装置 |
US8048806B2 (en) | 2000-03-17 | 2011-11-01 | Applied Materials, Inc. | Methods to avoid unstable plasma states during a process transition |
US20040129218A1 (en) * | 2001-12-07 | 2004-07-08 | Toshiki Takahashi | Exhaust ring mechanism and plasma processing apparatus using the same |
US20040025791A1 (en) * | 2002-08-09 | 2004-02-12 | Applied Materials, Inc. | Etch chamber with dual frequency biasing sources and a single frequency plasma generating source |
US20040031565A1 (en) * | 2002-08-13 | 2004-02-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas distribution plate for processing chamber |
US7186630B2 (en) | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
WO2004038777A1 (fr) * | 2002-10-24 | 2004-05-06 | Tokyo Electron Limited | Dispositif de traitement thermique |
US6942753B2 (en) * | 2003-04-16 | 2005-09-13 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
US20040235299A1 (en) * | 2003-05-22 | 2004-11-25 | Axcelis Technologies, Inc. | Plasma ashing apparatus and endpoint detection process |
US8580076B2 (en) * | 2003-05-22 | 2013-11-12 | Lam Research Corporation | Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith |
WO2005054537A2 (fr) * | 2003-12-01 | 2005-06-16 | Structured Materials Industries, Inc. | Systeme et procede destines a former des films multicomposes |
KR101172334B1 (ko) | 2003-12-26 | 2012-08-14 | 고에키자이단호진 고쿠사이카가쿠 신고우자이단 | 샤워 플레이트, 플라즈마 처리 장치, 및 제품의 제조방법 |
US8083853B2 (en) | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US8074599B2 (en) * | 2004-05-12 | 2011-12-13 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
US8328939B2 (en) * | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
US7429410B2 (en) * | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
KR100634451B1 (ko) * | 2005-01-10 | 2006-10-16 | 삼성전자주식회사 | 반도체 소자 제조 장치 |
US7198677B2 (en) * | 2005-03-09 | 2007-04-03 | Wafermasters, Inc. | Low temperature wafer backside cleaning |
US7695633B2 (en) * | 2005-10-18 | 2010-04-13 | Applied Materials, Inc. | Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor |
US20070245958A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Dual plasma source process using a variable frequency capacitively coupled source for controlling ion radial distribution |
US20070246162A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with an inductive plasma source and a VHF capacitively coupled plasma source with variable frequency |
US7645357B2 (en) * | 2006-04-24 | 2010-01-12 | Applied Materials, Inc. | Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency |
US20070246163A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with independent capacitive and inductive plasma sources |
US20070245961A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Dual plasma source process using a variable frequency capacitively coupled source for controlling plasma ion dissociation |
US7727413B2 (en) * | 2006-04-24 | 2010-06-01 | Applied Materials, Inc. | Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density |
US20070246443A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma process for controlling plasma ion dissociation |
US7780864B2 (en) * | 2006-04-24 | 2010-08-24 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution |
US20070245960A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion density |
US20070246161A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with a toroidal plasma source and a VHF capacitively coupled plasma source with variable frequency |
KR100841741B1 (ko) * | 2007-04-04 | 2008-06-27 | 주식회사 싸이맥스 | 진공처리장치 |
US7976631B2 (en) | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
US8342712B2 (en) | 2008-09-30 | 2013-01-01 | Disney Enterprises, Inc. | Kinetic flame device |
US9371973B2 (en) | 2010-06-28 | 2016-06-21 | Shenzhen Liown Electronics Company Ltd. | Electronic lighting device and method for manufacturing same |
US9129778B2 (en) | 2011-03-18 | 2015-09-08 | Lam Research Corporation | Fluid distribution members and/or assemblies |
KR101239109B1 (ko) * | 2011-09-23 | 2013-03-06 | 주성엔지니어링(주) | 균일한 막 증착을 위한 챔버 |
US20140273460A1 (en) * | 2013-03-13 | 2014-09-18 | Applied Materials, Inc. | Passive control for through silicon via tilt in icp chamber |
CN103305812A (zh) * | 2013-06-08 | 2013-09-18 | 上海和辉光电有限公司 | 一种上电极装置 |
CN104103561B (zh) * | 2014-07-24 | 2016-08-24 | 河北神通光电科技有限公司 | 用于气态氟化氢刻蚀二氧化硅的刻蚀腔体及其刻蚀系统 |
US10760161B2 (en) * | 2014-09-05 | 2020-09-01 | Applied Materials, Inc. | Inject insert for EPI chamber |
US20170081757A1 (en) * | 2015-09-23 | 2017-03-23 | Applied Materials, Inc. | Shadow frame with non-uniform gas flow clearance for improved cleaning |
KR102477354B1 (ko) * | 2018-03-29 | 2022-12-15 | 삼성전자주식회사 | 가스 분배 판을 갖는 플라즈마 처리 장치 |
KR20210125155A (ko) * | 2020-04-07 | 2021-10-18 | 삼성디스플레이 주식회사 | 표시 장치의 제조방법 |
US20220134359A1 (en) * | 2020-10-30 | 2022-05-05 | Kabushiki Kaisha Toshiba | Rectifying plate, fluid-introducing apparatus, and film-forming apparatus |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02198138A (ja) * | 1989-01-27 | 1990-08-06 | Nec Corp | 平行平板型ドライエッチング装置の電極板 |
JPH0661157A (ja) * | 1992-08-12 | 1994-03-04 | Sharp Corp | 半導体製造装置 |
EP0821085A1 (fr) * | 1996-07-24 | 1998-01-28 | Applied Materials, Inc. | Appareillage pour alimenter un gaz dans une chambre à traitement thermique rapide |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4792378A (en) | 1987-12-15 | 1988-12-20 | Texas Instruments Incorporated | Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor |
JPH0344471A (ja) | 1989-07-12 | 1991-02-26 | Mitsubishi Electric Corp | 化学気相成長装置 |
EP0413239B1 (fr) * | 1989-08-14 | 1996-01-10 | Applied Materials, Inc. | Système de distribution de gaz et méthode d'utilisation de ce système |
JPH04211115A (ja) | 1990-01-26 | 1992-08-03 | Fujitsu Ltd | Rfプラズマcvd装置ならびに該装置による薄膜形成方法 |
JPH06151368A (ja) * | 1992-11-02 | 1994-05-31 | Nec Corp | ドライエッチング装置 |
KR950020993A (ko) * | 1993-12-22 | 1995-07-26 | 김광호 | 반도체 제조장치 |
JP2726005B2 (ja) | 1994-07-20 | 1998-03-11 | 株式会社ジーティシー | 成膜装置および成膜方法 |
JPH0930892A (ja) | 1995-07-20 | 1997-02-04 | Yamaha Corp | プラズマcvd装置 |
US6090210A (en) * | 1996-07-24 | 2000-07-18 | Applied Materials, Inc. | Multi-zone gas flow control in a process chamber |
US6079356A (en) * | 1997-12-02 | 2000-06-27 | Applied Materials, Inc. | Reactor optimized for chemical vapor deposition of titanium |
JP4147608B2 (ja) * | 1998-03-06 | 2008-09-10 | 東京エレクトロン株式会社 | 熱処理装置 |
-
1998
- 1998-03-06 JP JP07317798A patent/JP4147608B2/ja not_active Expired - Fee Related
-
1999
- 1999-03-05 WO PCT/JP1999/001078 patent/WO1999045166A1/fr active IP Right Grant
- 1999-03-05 DE DE69927003T patent/DE69927003T2/de not_active Expired - Fee Related
- 1999-03-05 US US09/623,574 patent/US6599367B1/en not_active Expired - Fee Related
- 1999-03-05 EP EP99937952A patent/EP1061155B1/fr not_active Expired - Lifetime
- 1999-03-05 KR KR10-2000-7009817A patent/KR100514726B1/ko not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02198138A (ja) * | 1989-01-27 | 1990-08-06 | Nec Corp | 平行平板型ドライエッチング装置の電極板 |
JPH0661157A (ja) * | 1992-08-12 | 1994-03-04 | Sharp Corp | 半導体製造装置 |
EP0821085A1 (fr) * | 1996-07-24 | 1998-01-28 | Applied Materials, Inc. | Appareillage pour alimenter un gaz dans une chambre à traitement thermique rapide |
Non-Patent Citations (3)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 014, no. 479 (E - 0992) 18 October 1990 (1990-10-18) * |
PATENT ABSTRACTS OF JAPAN vol. 018, no. 290 (E - 1557) 2 June 1994 (1994-06-02) * |
See also references of WO9945166A1 * |
Also Published As
Publication number | Publication date |
---|---|
KR20010041619A (ko) | 2001-05-25 |
US6599367B1 (en) | 2003-07-29 |
DE69927003D1 (de) | 2005-10-06 |
EP1061155A1 (fr) | 2000-12-20 |
JP4147608B2 (ja) | 2008-09-10 |
EP1061155B1 (fr) | 2005-08-31 |
DE69927003T2 (de) | 2006-06-22 |
JPH11256328A (ja) | 1999-09-21 |
KR100514726B1 (ko) | 2005-09-13 |
WO1999045166A1 (fr) | 1999-09-10 |
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